JP5251185B2 - Compound semiconductor substrate, light emitting device using the same, and method of manufacturing compound semiconductor substrate - Google Patents

Description

  The present invention relates to a compound semiconductor substrate, a light-emitting device using the same, and a method for manufacturing the compound semiconductor substrate, and specifically, a compound semiconductor capable of manufacturing a light-emitting device with high luminance and improved electrical conductivity. The present invention relates to a substrate, a light emitting element using the same, and a method for manufacturing a compound semiconductor substrate.

A light emitting device in which a light emitting layer portion and a current diffusion layer are formed on a GaAs single crystal substrate is conventionally known.
For example, a light emitting device is known in which a light emitting layer portion made of AlGaInP and a current diffusion layer made of GaP (hereinafter also simply referred to as GaP layer) are formed on a GaAs single crystal substrate. This GaP current diffusion layer is formed on the light emitting layer side relatively thinly by metal organic vapor phase epitaxy (Metal Organic Vapor Phase Epitaxy, hereinafter simply referred to as MOVPE), and then hydride vapor phase epitaxy (Hydride Vapor Phase Epitaxy). The GaP epitaxial layer may be grown to a thickness of about 200 μm as a whole, for example.

Further, in order to realize high luminance of a light emitting element made of AlGaInP, a light emitting element in which a light-absorbing GaAs single crystal substrate is removed and a light-transmitting GaP substrate is bonded is conventionally known.
In addition, a technique of epitaxially growing a GaP layer instead of bonding a GaP substrate after removing a GaAs single crystal substrate is also disclosed (see Patent Document 1).

US Patent No. 5,008,718

Although the conventional technique achieves high brightness, the technique of joining the GaP substrates has a problem that the joining portion is peeled off in addition to the problem that the manufacturing cost increases as the process becomes complicated.
In addition, the technique of epitaxially growing the GaP layer instead of the junction has solved the problem of cost and peeling, but has the problem of increasing power consumption due to deterioration of electrical conductivity when the light emitting element is energized. .

  The present invention has been made to solve the above-described problems, and in a compound semiconductor substrate formed by epitaxially growing a GaP layer instead of a GaAs substrate, the electric conductivity when a light emitting element is energized is good. An object of the present invention is to provide a compound semiconductor substrate, a light emitting element using the compound semiconductor substrate, and a method for producing the compound semiconductor substrate.

In order to solve the above-described problem, in the present invention, at least a light emitting layer having an n-type first conductivity type cladding layer made of AlGaInP, an active layer, and a p-type second conductivity type cladding layer, and a p-type first layer of the light emission layer . A compound semiconductor substrate having a first current diffusion layer formed on the main surface side of a two-conductivity-type cladding layer and a second current diffusion layer formed on the other main surface side of the light emitting layer, (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1) having a smaller band gap than the n-type first conductivity type cladding layer between the light emitting layer and the second current diffusion layer. , 0 <y ≦ 1) layer is formed, and a compound semiconductor substrate is provided (claim 1).

Thus, the compound semiconductor substrate of the present invention has a smaller band gap (Al _x Ga) than the first conductivity type cladding layer made of AlGaInP between the first conductivity type cladding layer and the second current diffusion layer of the light emitting layer. _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer (hereinafter also referred to as an AlGaInP lower layer) is formed.
If the light-emitting layer (first conductivity type cladding layer) and the second current diffusion layer are in direct contact, the electrical barrier deteriorates due to the energy barrier present at the connection interface, resulting in increased power consumption. By providing an AlGaInP lower layer having a band gap smaller than that of the first conductivity type cladding layer between the layer and the second current diffusion layer, an energy barrier between the first conductivity type cladding layer and the second current diffusion layer is provided. Can be reduced. In addition, a compound semiconductor substrate that can improve electrical conductivity when current is supplied to the light-emitting element, and thus can form a light-emitting element that achieves high luminance and low power consumption. Yes.

In addition, it is preferable that the first current diffusion layer and the second current diffusion layer are formed by epitaxial growth.
Thus, by making the first and second current diffusion layers formed by epitaxial growth, they are less likely to be peeled off than those formed by bonding, and the first conductivity type cladding layer and the second current diffusion layer The amount of impurities between the diffusion layers and between the second conductivity type cladding layer and the first current diffusion layer can be reduced, thereby reducing the forward voltage when a current is applied as a light emitting element. can do.

The first current spreading layer and the second current spreading layer are preferably made of GaP or GaAsP.
Thus, the brightness | luminance of a light emitting element can be raised more by making a 1st and 2nd electric current diffusion layer into light-transmitting GaP or GaAsP.

The (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer preferably has a lattice constant lattice-matched to GaAs ( Claim 4).
Thus, if the lattice constant of the AlGaInP lower layer is lattice-matched to GaAs, for example, when the AlGaInP lower layer is formed by epitaxial growth, it can be stably formed on the GaAs substrate.

The (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer satisfies the relationship that the mixed crystal ratio x is x ≦ 0.1. (Claim 5).
Thus, by setting the Al mixed crystal ratio x of the AlGaInP lower layer to 0.1 or less, it is possible to obtain a compound semiconductor substrate with further excellent electrical conductivity, thereby further reducing power consumption. Become.

The (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer has a mixed crystal ratio x satisfying a relationship of x = 0. (Claim 6).
Further, by setting the Al mixed crystal ratio x in the AlGaInP lower layer to 0, a compound semiconductor substrate having extremely good electrical conductivity can be obtained.

The present invention also provides a light-emitting element manufactured using the compound semiconductor substrate according to the present invention (claim 7).
As described above, a light-emitting element manufactured using the above-described compound semiconductor substrate can have high luminance, good electrical conductivity, and low power consumption.

In the present invention, at least (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0) having a band gap smaller than that of an n-type first conductivity type cladding layer formed later on the GaAs substrate. A step of epitaxially growing a <y ≦ 1) layer, and the n made of AlGaInP on the main surface of the (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer gas phase forming a mold first conductivity type cladding layer and the active layer and the light emitting layer is epitaxially grown the p-type second-conductivity-type cladding layer in this order, a first current diffusion layer on the main surface of the light emitting layer A step of growing, a step of removing the GaAs substrate, and the (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) on the side where the GaAs substrate is removed ) Epitaxy the second current spreading layer on the main surface of the layer It provides a process for preparing a compound semiconductor substrate, characterized by a step of growing (claim 8).

  Thus, the AlGaInP lower layer having a smaller band gap than the first conductivity type cladding layer is epitaxially grown on the GaAs substrate, and the second current diffusion layer is grown on the surface of the AlGaInP lower layer after removing the GaAs substrate. As a result, the energy barrier generated at the epitaxial growth interface of the second current diffusion layer can be reduced, and thus a compound semiconductor substrate for a light-emitting element with good electrical conductivity can be manufactured.

The first current diffusion layer and the second current diffusion layer are preferably made of GaP or GaAsP.
In this way, by vapor-phase-growing GaP or GaAsP as the first current diffusion layer and the second current diffusion layer, the current diffusion layer can be made light-transmitting, and thus has higher luminance. A compound semiconductor substrate for a light-emitting element can be manufactured.

Preferably, the (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer is lattice-matched with the GaAs substrate. ).
As described above, when the lattice constant of the AlGaInP lower layer is lattice-matched with the GaAs substrate, the AlGaInP lower layer can be stably epitaxially grown on the GaAs substrate.

Further, epitaxial growth may be performed so that the mixed crystal ratio x of the (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer satisfies x ≦ 0.1. Preferred (claim 11).
Thus, by epitaxially growing the AlGaInP lower layer with an Al mixed crystal ratio x of 0.1 or less, the electrical conductivity is further improved, that is, the power consumption of the compound semiconductor substrate for a light emitting device can be suppressed. It can be set as a manufacturing method.

The (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer is preferably epitaxially grown so that the mixed crystal ratio x satisfies x = 0. Claim 12).
Furthermore, the AlGaInP lower layer is epitaxially grown with an Al mixed crystal ratio of 0, whereby a compound semiconductor substrate with extremely good electrical conductivity can be manufactured.

  As described above, in the compound semiconductor substrate of the present invention, the AlGaInP lower layer having a smaller band gap than the first conductivity type cladding layer is provided between the light emitting layer (first conductivity type cladding layer) and the second current diffusion layer. As a result, the energy barrier generated at the interface between the first conductivity type cladding layer and the second current diffusion layer can be reduced, and thus the electrical conductivity when current is supplied to the light emitting element can be improved. It is a compound semiconductor substrate.

Hereinafter, the present invention will be described more specifically.
As described above, in a compound semiconductor substrate in which a GaP layer is epitaxially grown instead of a GaAs substrate, a compound semiconductor substrate having good electrical conductivity when a light-emitting element is energized, a light-emitting element using the compound semiconductor substrate, and manufacture of the compound semiconductor substrate The development of the method was awaited.

  Therefore, the present inventors diligently studied the cause of deterioration in electrical conductivity when energized as a light-emitting element when the light-absorbing GaAs single crystal substrate is removed and a light-transmitting GaP layer is epitaxially grown. As a result, in the compound semiconductor substrate in which the second current diffusion layer is directly epitaxially grown on the first conductivity type cladding layer of the light emitting layer, it has been found that the electrical conductivity deteriorates due to the energy barrier generated at the growth interface.

  As a result of further intensive studies by the present inventors on the solution of such a problem, in forming the second current diffusion layer by epitaxial growth, the AlGaInP lower layer having a smaller band gap than the first conductivity type cladding layer is formed. It was discovered that the energy barrier generated between the first conductivity type cladding layer and the second current diffusion layer can be reduced by forming the second current diffusion layer thereon, thereby completing the present invention.

Hereinafter, the present invention will be described in detail with reference to FIGS. 1 and 2, but the present invention is not limited thereto. FIG. 1 is a schematic view showing an example of a compound semiconductor substrate of the present invention.
The compound semiconductor substrate 10 of the present invention includes at least an n-type second current diffusion layer 18, an (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer. (AlGaInP lower layer) 14, light emitting layer 15, and p-type first current diffusion layer 17. Among them, the light emitting layer 15 includes at least a first conductivity type cladding layer (n-type AlGaInP cladding layer) 15a made of AlGaInP, an active layer 15b, and a second conductivity type cladding layer (p-type AlGaInP cladding layer) 15c. The first current diffusion layer 17 has a p-type GaP connection layer 16 on the second conductivity type cladding layer 15c side.

The (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer 14 has a smaller band gap than the first conductivity type cladding layer 15a. .
In order to make the band gap of the (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer 14 smaller than that of the first conductivity type cladding layer 15a, For example, the Al mixed crystal ratio a and In mixed crystal of the first conductivity type clad layer (Al _a Ga _1-a ) _b In _1-b P (0 ≦ a ≦ 1, 0 <b ≦ 1) made of AlGaInP The relationship between the ratio b and the Al mixed crystal ratio x and the In mixed crystal ratio y in the (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer 14 Can be achieved by satisfying a> x and b = y. Although the band gap can be reduced by changing the In mixed crystal ratio to b> y, the lattice constant does not match, so the In mixed crystal ratio is not changed and the Al mixed crystal ratio is not changed. Is preferably changed.

  Thus, the compound semiconductor substrate 10 having a structure having the AlGaInP lower layer 14 having a smaller band gap than the first conductivity type cladding layer 15a between the second current diffusion layer 18 and the first conductivity type cladding layer 15a, Compared to the substrate in which the second current diffusion layer and the first conductivity type cladding layer are in direct contact, the energy barrier existing at the connection interface can be reduced. As a result, when a current is applied as a light emitting element, the forward voltage can be lowered, and a compound semiconductor substrate capable of reducing power consumption can be obtained.

Here, the first current diffusion layer 17 and the second current diffusion layer 18 may be formed by epitaxial growth.
As described above, by forming the first and second current diffusion layers by epitaxial growth, it is possible to make the layers less likely to be peeled compared to a compound semiconductor substrate formed by bonding. . In addition, the impurity concentration between the first conductivity type cladding layer and the second current diffusion layer and between the second conductivity type cladding layer and the first current diffusion layer can be reduced. When a current is applied, an increase in forward voltage can be further suppressed, that is, electrical conductivity can be improved.

The first current spreading layer 17 and the second current spreading layer 18 can be made of GaP or GaAsP.
By using GaP or GaAsP that transmits light through the first current diffusion layer and the second current diffusion layer, light emitted from the active layer is emitted outside the light emitting element without being absorbed by the current diffusion layer. Therefore, the emission luminance can be made stronger.

Further, the lattice constant of the AlGaInP lower layer 14 may be lattice-matched to GaAs.
If the lattice constant of the AlGaInP lower layer is lattice-matched with GaAs, for example, when the AlGaInP lower layer is formed by epitaxial growth on a GaAs substrate, it can be grown stably, and crystalline It can be good.

The AlGaInP lower layer ((Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer) 14 has an Al mixed crystal ratio x of x ≦ 0.1. Satisfying the above relationship, more preferably x = 0.
By using the AlGaInP lower layer having the mixed crystal ratio as described above, the energy barrier between the second current diffusion layer and the first conductivity type cladding layer can be made smaller, so that the electric conductivity is further increased. Thus, a compound semiconductor substrate can be obtained which can be a favorable light-emitting element that can further reduce power consumption.

  Such a compound semiconductor substrate of the present invention can be manufactured by a method of manufacturing a compound semiconductor substrate as exemplified below, but is not limited to this. Here, FIG. 2 is a process flow showing an example of a method for producing a compound semiconductor substrate of the present invention.

(Process 1)
First, as shown in Step 1 of FIG. 2, an n-type GaAs substrate 11 is prepared as a growth single crystal substrate, cleaned, and then put into a MOCVD reactor.

(Process 2)
Next, as shown in step 2, an n-type GaAs buffer layer 12 and an n-type AlInP etching stop layer 13 are epitaxially grown on the previously introduced GaAs substrate 11.

(Process 3)
Next, as shown in Step 3, on the surface of the n-type AlInP etching stop layer 13, n-type (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, A 0 <y ≦ 1) layer (AlGaInP lower layer) 14 is epitaxially grown. At this time, the AlGaInP lower layer 14 has a composition such that the band gap is smaller than that of the first conductivity type cladding layer 15a grown in the next step 4. As a composition for reducing the band gap, it is possible to increase the In mixed crystal ratio as compared with the first conductivity type cladding layer. However, since the lattice constant is not matched, the In mixed crystal ratio is not changed and the Al mixed ratio is not changed. It is preferable to reduce the crystal ratio.

For example, when the composition of the first conductivity type cladding layer 15a is (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P, the AlGaInP lower layer 14 has an In mixed crystal ratio of 0.5, By setting the mixed crystal ratio x of Al to less than 0.7, preferably 0.1 or less, and more preferably to set the ratio of Al to 0, the band gap can be made smaller than that of the first conductivity type cladding layer.

As described above, the AlGaInP lower layer 14 can have an Al mixed crystal ratio x of 0.1 or less, and more preferably an Al ratio of 0%.
By epitaxially growing the AlGaInP lower layer having such a mixed crystal ratio on the GaAs substrate, the energy barrier between the second current diffusion layer 18 and the first conductivity type cladding layer 15a to be formed later can be further reduced. Therefore, a compound semiconductor substrate with better electrical conductivity can be obtained. Therefore, a compound semiconductor substrate for a light-emitting element that can further reduce power consumption can be manufactured.

Further, the lattice constant of the AlGaInP lower layer 14 can be lattice-matched with the GaAs substrate 11.
If the GaAs substrate and the AlGaInP lower layer are lattice-matched, when the AlGaInP lower layer is epitaxially grown, it can be stably grown and the crystallinity can be improved.

(Process 4)
Next, as shown in Step 4, an n-type first conductivity type cladding layer 15a, an active layer 15b, and a p-type second conductivity type cladding layer 15c are formed on the surface of the AlGaInP lower layer 14 in this order by MOCVD. The light emitting layer 15 is formed by epitaxial growth. The thickness of each layer is 0.8 μm or more and 4 μm or less (for example, 1 μm) for the first conductivity type cladding layer 15 a, 0.4 μm or more and 2 μm or less (for example 0.6 μm) for the active layer 15 b, and 0. It can be 8 μm or more and 4 μm or less (for example, 1 μm).

At this time, the composition ratio of AlGaInP in each layer is, for example, (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P for the first conductivity type cladding layer 15 a and (Al _0.1 Ga _{0. 9} ) _0.5 In _0.5 P, and the second conductivity type cladding layer 15 c can be (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P. It goes without saying that these composition ratios are not limited to the above ratios and can be appropriately determined.

(Process 5)
Next, as shown in Step 5, a p-type GaP connection layer 16 having a thickness of about 0.05 to 1 μm (for example, 0.5 μm) is heteroepitaxially grown on the surface of the second conductivity type cladding layer 15c by MOCVD. Then, an MO epitaxial substrate is obtained.
As source gases used as component sources of Al, Ga, In, and P used in the epitaxial growth of these layers formed in the above steps 2 to 5,
Al source gas: trimethylaluminum (TMAl), triethylaluminum (TEAl), etc.
Ga source gas: trimethylgallium (TMGa), triethylgallium (TEGa), etc.
In source gas: trimethylindium (TMIn), triethylindium (TEIn), etc.
P source gas: trimethyl phosphorus (TMP), triethyl phosphorus (TEP), phosphine (PH ₃ ), and the like.

(Step 6)
Next, as shown in step 6, a first current diffusion layer 17 (window layer) is formed on the p-type GaP connection layer 16.
The first current diffusion layer 17 is preferably made of GaP or GaAsP. Hereinafter, a GaP layer will be described as an example of the first current diffusion layer 17.
The MO epitaxial substrate obtained in step 5 is taken out from the reactor of MOCVD and placed in the reactor of HVPE method. Then, Zn is doped, and the first current diffusion layer 17 of p-type GaP is homoepitaxially grown on the surface of the p-type GaP connection layer 16 with a thickness of 5 μm to 200 μm (for example, 40 μm).

Here, with respect to the HVPE method, specifically, the reaction of the following formula (1) is performed by introducing hydrogen chloride onto the Ga while maintaining the group III element Ga at a predetermined temperature in the container. Then, GaCl is generated and supplied onto the substrate together with H ₂ gas which is a carrier gas. The growth temperature is set to 600 ° C. or higher and 800 ° C. or lower, for example.
Ga (g) + HCl (g) → GaCl (g) + 1 / 2H ₂ (g) (1)
Further, P, which is a group V element, supplies PH ₃ together with H ₂ which is a carrier gas onto the substrate, and Zn, which is a p-type dopant, is supplied in the form of DMZn (dimethylzinc). GaCl is excellent in reactivity with PH _3, and the current diffusion layer can be efficiently grown by the reaction of the following formula (2).
GaCl (g) + PH ₃ (g) → GaP (s) + HCl (g) + H ₂ (g) (2)

(Step 7)
Next, as shown in step 7, the surface of the GaAs substrate 11 opposite to the surface on which the AlGaInP lower layer 14, the light emitting layer 15, and the first current diffusion layer 16 are formed is polished to remove peripheral nodules. After that, the GaAs substrate 11, the n-type GaAs buffer layer 12, and the n-type AlInP etching stop layer 13 are removed. This exposes the AlGaInP lower layer.
This removal can be etching, for example. As an etchant, for example, a sulfuric acid / hydrogen peroxide mixture can be used.

(Process 8)
Next, as shown in Step 8, by forming the second current diffusion layer 18 on the surface of the AlGaInP lower layer 14 exposed by removing the GaAs substrate 11, by epitaxial growth using the HVPE method described above, The compound semiconductor substrate 10 can be obtained.

The second current diffusion layer 18 is also preferably GaP or GaAsP, like the first current diffusion layer 17.
As the first current diffusion layer and the second current diffusion layer, GaP or GaAsP that transmits light is vapor-phase grown, and light in the light emitting layer is extracted outside the device without being absorbed by the current diffusion layer. Therefore, a compound semiconductor substrate that can achieve high luminance when used as a light-emitting element can be manufactured.

  Thus, the method for manufacturing a compound semiconductor substrate of the present invention does not manufacture the second current diffusion layer and the first conductivity type cladding layer in direct contact but has a smaller band gap than the first conductivity type cladding layer. It is manufactured with an AlGaInP lower layer interposed. Thereby, an energy barrier existing between the second current diffusion layer and the first conductivity type cladding layer can be reduced, and thus a method of manufacturing a compound semiconductor substrate capable of providing a light-emitting element with good electrical conductivity It has become.

  In the above example, the AlGaInP lower layer 14 is first epitaxially grown on the GaAs substrate 11. However, of course, after removing the GaAs substrate 11 and before epitaxially growing the second current diffusion layer 18, the first conductive layer is formed. The compound semiconductor substrate 10 according to the present invention can also be obtained by forming it by epitaxial growth on the mold cladding layer 15a.

  The compound semiconductor substrate 10 manufactured through the above steps is cut, processed into chips, and attached with electrodes, whereby a light-emitting element that achieves high luminance and low power consumption can be obtained.

EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated more concretely, of course, this invention is not limited to these.
(Example 1-6, comparative example)
In accordance with the process of FIG. 2, which is the method for manufacturing a compound semiconductor substrate of the present invention, an n-type GaAs buffer layer is 0.5 μm and an n-type AlInP etching stop layer is 0.5 μm on a 280 μm thick GaAs single crystal substrate. Epitaxially grown.
Next, an AlGaInP lower layer lattice-matched to the GaAs substrate was formed by epitaxial growth.
The composition of the AlGaInP lower layer formed at this time is as shown in Table 1 described later.

Next, an n-type first-conductivity-type cladding layer made of (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P and having a thickness of 1.0 μm, (Al _0.1 Ga _{0. 9} ) An active layer made of _0.5 In _0.5 P and having a thickness of 0.6 μm, and a p-type first layer made of (Al _0.7 Ga _0.3 ) _0.5 In _0.5 P and having a thickness of 1.0 μm. The two-conductivity-type cladding layer was epitaxially grown in this order by the MOCVD method.
Further, a p-type GaP connection layer having a thickness of 0.1 μm was grown on the p-type second conductivity type cladding layer to obtain an MO epitaxial substrate. Note that trimethylgallium (TMGa), trimethylindium (TMIn), trimethylaluminum (TMAl), phosphine (PH ₃ ), and arsine (AsH ₃ ) were used as source gases for the epitaxial growth.

Next, a p-type GaP epitaxial layer was grown as a first current diffusion layer on the p-type second conductivity type cladding layer of the MO epitaxial substrate by vapor deposition of about 150 μm by the HVPE method.
Next, the GaAs substrate, n-type GaAs buffer layer, and AlInP etching stop layer were removed by etching with a chemical such as sulfuric acid / hydrogen peroxide, and then placed in the HVPE reactor. A compound semiconductor substrate was manufactured by forming an n-type GaP window layer of 200 μm as a second current diffusion layer on the n-type AlGaInP lower layer by HVPE by epitaxial growth.

The compound semiconductor substrate manufactured by the above steps was cut, processed into a 200 μm square chip, and attached with an electrode to manufacture a light emitting device. Among these, the forward voltage Vf was measured and evaluated by applying 20 mA with a constant current power source to three light emitting elements (substrate central part (1), peripheral part (2)).
FIG. 3 shows a graph showing the relationship between the Al composition ratio x of the lower layer of AlGaInP and the value of the forward voltage Vf of the light emitting device in the example of the present invention and the comparative example.

As shown in FIG. 3, the light emitting element using the compound semiconductor substrate of Example 1 (x = 0) was generally good at Vf = 1.9V. In Example 2 (x = 0.05), Vf = 1.93 V, in Example 3 (x = 0.1), Vf = 1.98 V, and in Example 4 (x = 0.2), Vf = 2. 1 V, Vf = 2.2 V in Example 5 (x = 0.4), Vf = 2.4 V in Example 6 (x = 0.6), and Vf gradually increases as the Al mixed crystal ratio x increases. However, it was found that a relatively good Vf value can be obtained.
On the other hand, the forward voltage of the light emitting device using the compound semiconductor substrate of the comparative example in which the Al mixed crystal ratio x of the AlGaInP lower layer is the same as that of the first conductivity type cladding layer (V = 0.7) is Vf = 2. .85V, and the mixed crystal ratio x of Al is larger than the Vf of the light emitting device using the compound semiconductor substrate of Examples 1 to 6, which is smaller than the first conductivity type cladding layer. It turns out that it is not so good.

  The present invention is not limited to the above embodiment. The above-described embodiment is an exemplification, and the present invention has any configuration that has substantially the same configuration as the technical idea described in the claims of the present invention and that exhibits the same effects. Are included in the technical scope.

It is the schematic which showed an example of the compound semiconductor substrate of this invention. It is the process flow which showed an example of the manufacturing method of the compound semiconductor substrate of this invention. In the Example and comparative example of this invention, it is the graph which showed the relationship between the composition ratio x of Al, and the value of the forward voltage Vf of a light emitting element.

Explanation of symbols

10 ... compound semiconductor substrate, 11 ... GaAs substrate, 12 ... GaAs buffer layer, 13 ... AlInP etching stop layer, 14 ... AlGaInP lower layer _{((Al x Ga 1-x} ) y In 1-y P (0 ≦ x ≦ 1 , 0 <y ≦ 1) layer), 15 ... light emitting layer, 15a ... first conductivity type cladding layer, 15b ... active layer, 15c ... second conductivity type cladding layer, 16 ... p-type GaP connection layer, 17 ... first 18 of a current diffusion layer of the second current diffusion layer.

Claims (12)

A light emitting layer having at least an n-type first conductivity type cladding layer made of AlGaInP, an active layer, and a p-type second conductivity type cladding layer, and formed on the main surface side of the p-type second conductivity type cladding layer of the light emitting layer A compound semiconductor substrate having a first current diffusion layer formed and a second current diffusion layer formed on the other main surface side of the light emitting layer,
(Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, smaller band gap than the n-type first conductivity type cladding layer between the light emitting layer and the second current spreading layer. A compound semiconductor substrate in which a layer of 0 <y ≦ 1) is formed.   The compound semiconductor substrate according to claim 1, wherein the first current diffusion layer and the second current diffusion layer are formed by epitaxial growth.   3. The compound semiconductor substrate according to claim 1, wherein the first current diffusion layer and the second current diffusion layer are made of GaP or GaAsP. 4. The (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer has a lattice constant lattice-matched to GaAs. The compound semiconductor substrate according to any one of claims 1 to 3. The (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer has a mixed crystal ratio x satisfying a relationship of x ≦ 0.1. The compound semiconductor substrate according to any one of claims 1 to 4, wherein the compound semiconductor substrate is characterized in that: The (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer is characterized in that the mixed crystal ratio x satisfies the relationship x = 0. The compound semiconductor substrate according to any one of claims 1 to 4.   A light emitting device manufactured using the compound semiconductor substrate according to claim 1. (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer having a band gap smaller than at least an n-type first conductivity type cladding layer formed later on a GaAs substrate And the n-type first conductivity type cladding made of AlGaInP on the main surface of the (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer Forming a light emitting layer by epitaxially growing a layer, an active layer and a p-type second conductivity type cladding layer in this order; vapor-phase-growing a first current diffusion layer on the main surface of the light emitting layer; A step of removing the GaAs substrate, and a main surface of the (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer on the side where the GaAs substrate is removed Epitaxially growing a second current spreading layer; and Compound semiconductor substrate manufacturing method characterized in that it comprises.   9. The method of manufacturing a compound semiconductor substrate according to claim 8, wherein the first current diffusion layer and the second current diffusion layer are made of GaP or GaAsP. 9. The (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer is lattice-matched to the GaAs substrate. The manufacturing method of the compound semiconductor substrate of Claim 9. Epitaxial growth is performed such that the mixed crystal ratio x of the (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer satisfies x ≦ 0.1. The manufacturing method of the compound semiconductor substrate of any one of Claim 8 thru | or 10. The epitaxial growth is performed so that the mixed crystal ratio x of the (Al _x Ga _1-x ) _y In _1-y P (0 ≦ x ≦ 1, 0 <y ≦ 1) layer satisfies x = 0. The manufacturing method of the compound semiconductor substrate of any one of Claims 8 thru | or 10.

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