JP5248837B2 - 研磨パッドの曲線状溝加工 - Google Patents
研磨パッドの曲線状溝加工 Download PDFInfo
- Publication number
- JP5248837B2 JP5248837B2 JP2007277365A JP2007277365A JP5248837B2 JP 5248837 B2 JP5248837 B2 JP 5248837B2 JP 2007277365 A JP2007277365 A JP 2007277365A JP 2007277365 A JP2007277365 A JP 2007277365A JP 5248837 B2 JP5248837 B2 JP 5248837B2
- Authority
- JP
- Japan
- Prior art keywords
- polishing pad
- cutting
- groove
- rotating
- cutting bit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005498 polishing Methods 0.000 title claims description 134
- 238000003754 machining Methods 0.000 title description 4
- 238000005520 cutting process Methods 0.000 claims description 125
- 238000000034 method Methods 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 27
- 229920000642 polymer Polymers 0.000 claims description 14
- 238000001816 cooling Methods 0.000 claims description 12
- 238000002844 melting Methods 0.000 claims description 11
- 230000008018 melting Effects 0.000 claims description 11
- 239000000126 substance Substances 0.000 claims description 7
- 239000004065 semiconductor Substances 0.000 claims description 3
- 238000007599 discharging Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 230000007547 defect Effects 0.000 description 24
- 239000000203 mixture Substances 0.000 description 21
- 230000008569 process Effects 0.000 description 19
- 239000000463 material Substances 0.000 description 17
- 239000007789 gas Substances 0.000 description 12
- 238000004519 manufacturing process Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 238000013461 design Methods 0.000 description 8
- 230000003750 conditioning effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000012530 fluid Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 229920002635 polyurethane Polymers 0.000 description 5
- 239000004814 polyurethane Substances 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 230000009471 action Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 238000007664 blowing Methods 0.000 description 3
- 239000002775 capsule Substances 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 238000005461 lubrication Methods 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 239000005062 Polybutadiene Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229920002857 polybutadiene Polymers 0.000 description 2
- 229920000728 polyester Polymers 0.000 description 2
- 229920000098 polyolefin Polymers 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- DQXBYHZEEUGOBF-UHFFFAOYSA-N but-3-enoic acid;ethene Chemical compound C=C.OC(=O)CC=C DQXBYHZEEUGOBF-UHFFFAOYSA-N 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- HQQADJVZYDDRJT-UHFFFAOYSA-N ethene;prop-1-ene Chemical group C=C.CC=C HQQADJVZYDDRJT-UHFFFAOYSA-N 0.000 description 1
- 239000005038 ethylene vinyl acetate Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000499 gel Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000010687 lubricating oil Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000003801 milling Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 1
- 239000004417 polycarbonate Substances 0.000 description 1
- 229920000515 polycarbonate Polymers 0.000 description 1
- -1 polyethylene terephthalate Polymers 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000005020 polyethylene terephthalate Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 229920000915 polyvinyl chloride Polymers 0.000 description 1
- 239000004800 polyvinyl chloride Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229920001897 terpolymer Polymers 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 239000012815 thermoplastic material Substances 0.000 description 1
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
- 238000007514 turning Methods 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23C—MILLING
- B23C3/00—Milling particular work; Special milling operations; Machines therefor
- B23C3/28—Grooving workpieces
- B23C3/34—Milling grooves of other forms, e.g. circumferential
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23C—MILLING
- B23C5/00—Milling-cutters
- B23C5/02—Milling-cutters characterised by the shape of the cutter
- B23C5/10—Shank-type cutters, i.e. with an integral shaft
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
- B24D11/008—Finishing manufactured abrasive sheets, e.g. cutting, deforming
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23C—MILLING
- B23C2210/00—Details of milling cutters
- B23C2210/20—Number of cutting edges
- B23C2210/201—Number of cutting edges one
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23C—MILLING
- B23C2226/00—Materials of tools or workpieces not comprising a metal
- B23C2226/61—Plastics not otherwise provided for, e.g. nylon
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/49—Method of mechanical manufacture
- Y10T29/49995—Shaping one-piece blank by removing material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T409/00—Gear cutting, milling, or planing
- Y10T409/30—Milling
- Y10T409/303752—Process
- Y10T409/303808—Process including infeeding
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T409/00—Gear cutting, milling, or planing
- Y10T409/30—Milling
- Y10T409/304424—Means for internal milling
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Milling Processes (AREA)
Description
ここで、vxとvyはそれぞれxとy方向の速度に等しい。
IC1000(商標)のポリウレタン研磨パッドのような、より固い材料の場合、切り取り(chip)負荷をより高くすると(例えば、0.0064cm/回転)、より質の高い溝が作り出された。最適な作業は、約686cm/分(270ipm)の送り速度;120k rpmのスピンドル速度であり、IC1000(商標)のパッドに対しPMTあるいはKTツールビットの何れでも最良の溝が形成された。
VisionPad(商標)ポリウレタン研磨パッドのようなより軟らかい材料に対しては、切り取り負荷をより低くすると(例えば、0.0044cm/回転)、より質の高い作り出された。最適な作業は、533cm/分(210ipm)の送り速度約;及び150k rpmのスピンドル速度であり、VisionPad(商標)のポリウレタン研磨パッドに対しPMTツールビットにより最良の溝が形成された。
12 回転テーブル
14 研磨パッド
16 切削ビット
18 回転スピンドル
20 可動取付アセンブリ
22 真空ライン
24 ガスライン
26 フレキシブルコネクタ
30 曲線らせん状溝
32 中心
34 外周
40 コレット
42 シールド
50 切削端部
52 溝
54 シャンク
56 テーパ部
58 切削ブレード
60 切削端部
Claims (4)
- 基体の化学機械平坦化に有用な高分子研磨パッドに溝を形成する方法であり、基体が磁性基体、光学基体および半導体基体の少なくとも一つである方法であって、
z方向における軸の周りに切削ビットを回転させるステップであって、切削ビットは、少なくとも毎分60,000回転の回転速度で回転し、その回転速度は、冷却せず研磨パッドに低速で接すると高分子研磨パッドを融解するのに十分な速度であり、かつ高分子研磨パッド中にz方向に溝の深さを切削する少なくとも一つの切削端部を有しており、該回転させるステップは、エアーベアリングにより潤滑された回転する切削ビットに取り付けられた回転するスピンドルを含み、該エアーベアリング内の空気圧により回転するスピンドルを心合わせする、ステップと;
研磨パッドをx方向およびy方向に切削するステップであって、高分子研磨パッドに少なくとも一つの曲線状溝を形成し、x方向およびy方向は単一平面において垂直であり、かつ回転する切削ビットを高分子研磨パッドの一部と接触させることによってz方向と直交をなし、少なくとも一つの曲線状溝は高分子側壁を有し、該エアーベアリング内の空気流は、x方向およびy方向の横方向の負荷を超えるのに十分な大きさである、ステップと、
少なくとも一つの溝内における研磨パッドから切削屑を、回転する切削ビット中の少なくとも一つの溝により排出するステップと;
プログラム生成信号でx方向とy方向の少なくとも一つにおいて切削の速度を変化させて、曲線状路に沿って切削を導き、かつ曲線形状を有する少なくとも一つの溝を高分子研磨パッドに提供するステップであって、プログラム生成信号は曲線状路での回転切削させる一方で、回転するビットの速度を維持して、計算された切り屑の厚さを回転する切削ビットの直径の0.02から0.6倍に維持し、高分子研磨パッドの高分子側壁の融解を低減するステップと;
を含む方法。 - 排出するステップが、切削ビット中の溝が単一の溝であり、その単一の溝が、回転する切削ビットの切削端部をその軸の周りに回転させ形成される体積の40%より大きい体積を有することを含む、請求項1記載の方法。
- 回転する切削ビット速度が、計算された切り屑の厚さを回転する切削ビットの直径の0.04から0.4倍に維持する、請求項1記載の方法。
- 前記回転が、切削端部において2回転未満の回転を有するコルクスクリュー形状を有する回転する切削ビットを回転させる、請求項1記載の方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/592910 | 2006-11-03 | ||
US11/592,910 US7234224B1 (en) | 2006-11-03 | 2006-11-03 | Curved grooving of polishing pads |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2008137148A JP2008137148A (ja) | 2008-06-19 |
JP5248837B2 true JP5248837B2 (ja) | 2013-07-31 |
Family
ID=38178642
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007277365A Active JP5248837B2 (ja) | 2006-11-03 | 2007-10-25 | 研磨パッドの曲線状溝加工 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7234224B1 (ja) |
JP (1) | JP5248837B2 (ja) |
TW (1) | TWI402904B (ja) |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7516536B2 (en) * | 1999-07-08 | 2009-04-14 | Toho Engineering Kabushiki Kaisha | Method of producing polishing pad |
JP3769581B1 (ja) * | 2005-05-18 | 2006-04-26 | 東洋ゴム工業株式会社 | 研磨パッドおよびその製造方法 |
US7311590B1 (en) * | 2007-01-31 | 2007-12-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with grooves to retain slurry on the pad texture |
US9180570B2 (en) * | 2008-03-14 | 2015-11-10 | Nexplanar Corporation | Grooved CMP pad |
US8161851B1 (en) | 2008-03-31 | 2012-04-24 | Ceradyne, Inc. | Composite trimming process |
TWI360459B (en) * | 2008-04-11 | 2012-03-21 | Bestac Advanced Material Co Ltd | A polishing pad having groove structure for avoidi |
TW201017143A (en) * | 2008-10-29 | 2010-05-01 | King Rich Ind Co Ltd | Bearing measurement jig |
US8950910B2 (en) * | 2009-03-26 | 2015-02-10 | Cree, Inc. | Lighting device and method of cooling lighting device |
EP2322318A1 (fr) * | 2009-11-12 | 2011-05-18 | Gemalto SA | Procédé d'usinage d'un corps de carte et station de préparation associé |
US9211628B2 (en) * | 2011-01-26 | 2015-12-15 | Nexplanar Corporation | Polishing pad with concentric or approximately concentric polygon groove pattern |
US9034063B2 (en) * | 2012-09-27 | 2015-05-19 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Method of manufacturing grooved chemical mechanical polishing layers |
US9687956B2 (en) | 2012-11-06 | 2017-06-27 | Cabot Microelectronics Corporation | Polishing pad with offset concentric grooving pattern and method for polishing a substrate therewith |
CN103008740A (zh) * | 2012-11-16 | 2013-04-03 | 云南钛业股份有限公司 | 一种钛坯表面加工方法 |
US9522454B2 (en) * | 2012-12-17 | 2016-12-20 | Seagate Technology Llc | Method of patterning a lapping plate, and patterned lapping plates |
JP5629749B2 (ja) * | 2012-12-28 | 2014-11-26 | 東洋ゴム工業株式会社 | 研磨パッドの製造方法 |
TWI599447B (zh) | 2013-10-18 | 2017-09-21 | 卡博特微電子公司 | 具有偏移同心溝槽圖樣之邊緣排除區的cmp拋光墊 |
US10058934B2 (en) * | 2014-06-18 | 2018-08-28 | Kyocera Sgs Precision Tools, Inc. | Rotary cutting tool with honed edges |
CN104096855B (zh) * | 2014-07-03 | 2017-01-18 | 东莞市志强机械设备有限公司 | 一种车削加工组件的使用方法 |
SG10201906815XA (en) * | 2014-08-26 | 2019-08-27 | Ebara Corp | Substrate processing apparatus |
US9873180B2 (en) | 2014-10-17 | 2018-01-23 | Applied Materials, Inc. | CMP pad construction with composite material properties using additive manufacturing processes |
KR102436416B1 (ko) | 2014-10-17 | 2022-08-26 | 어플라이드 머티어리얼스, 인코포레이티드 | 애디티브 제조 프로세스들을 이용한 복합 재료 특성들을 갖는 cmp 패드 구성 |
US11745302B2 (en) | 2014-10-17 | 2023-09-05 | Applied Materials, Inc. | Methods and precursor formulations for forming advanced polishing pads by use of an additive manufacturing process |
US10875153B2 (en) | 2014-10-17 | 2020-12-29 | Applied Materials, Inc. | Advanced polishing pad materials and formulations |
JP6940495B2 (ja) | 2015-10-30 | 2021-09-29 | アプライド マテリアルズ インコーポレイテッドApplied Materials,Incorporated | 所望のゼータ電位を有する研磨用物品を形成するための装置及び方法 |
US10391605B2 (en) | 2016-01-19 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for forming porous advanced polishing pads using an additive manufacturing process |
US11471999B2 (en) | 2017-07-26 | 2022-10-18 | Applied Materials, Inc. | Integrated abrasive polishing pads and manufacturing methods |
WO2019032286A1 (en) | 2017-08-07 | 2019-02-14 | Applied Materials, Inc. | ABRASIVE DISTRIBUTION POLISHING PADS AND METHODS OF MAKING SAME |
JP7299970B2 (ja) | 2018-09-04 | 2023-06-28 | アプライド マテリアルズ インコーポレイテッド | 改良型研磨パッドのための配合物 |
US11897079B2 (en) | 2019-08-13 | 2024-02-13 | Applied Materials, Inc. | Low-temperature metal CMP for minimizing dishing and corrosion, and improving pad asperity |
CN110695862B (zh) * | 2019-10-14 | 2021-01-26 | 河南科技大学 | 一种新型低温氮气管道砂轮 |
CN112677065A (zh) * | 2020-12-28 | 2021-04-20 | 上海江丰平芯电子科技有限公司 | 一种抛光垫的加工装置及加工方法和由其制得的抛光垫 |
US11878389B2 (en) | 2021-02-10 | 2024-01-23 | Applied Materials, Inc. | Structures formed using an additive manufacturing process for regenerating surface texture in situ |
CN114643532A (zh) * | 2021-04-26 | 2022-06-21 | 宁波赢伟泰科新材料有限公司 | 一种提高抛光液利用效率的化学机械抛光垫 |
CN114473857B (zh) * | 2021-12-29 | 2023-03-14 | 湖北鼎汇微电子材料有限公司 | 一种抛光垫及半导体器件的制造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3705339A (en) * | 1969-08-22 | 1972-12-05 | Gen Electric | Automatic servomotor control for lathes providing sfm and chip thickness control |
JP3307694B2 (ja) * | 1992-10-26 | 2002-07-24 | 日進工具株式会社 | エンドミル |
JP3391850B2 (ja) * | 1993-06-30 | 2003-03-31 | 日立ツール株式会社 | 1枚刃エンドミル |
US5569062A (en) * | 1995-07-03 | 1996-10-29 | Speedfam Corporation | Polishing pad conditioning |
EP0788040B1 (en) * | 1995-09-28 | 2002-03-13 | The Institute of Physical and Chemical Research ( RIKEN) | Method of high speed cutting mold and ultra-high speed milling machine |
JPH11285962A (ja) * | 1998-04-06 | 1999-10-19 | Sony Corp | 研磨パッド、研磨装置および研磨方法 |
US5878476A (en) * | 1998-09-09 | 1999-03-09 | Noelle; John A. | High speed attachment for milling machines and method of use |
US6869343B2 (en) * | 2001-12-19 | 2005-03-22 | Toho Engineering Kabushiki Kaisha | Turning tool for grooving polishing pad, apparatus and method of producing polishing pad using the tool, and polishing pad produced by using the tool |
US6656019B1 (en) * | 2000-06-29 | 2003-12-02 | International Business Machines Corporation | Grooved polishing pads and methods of use |
US6340325B1 (en) * | 2000-06-29 | 2002-01-22 | International Business Machines Corporation | Polishing pad grooving method and apparatus |
US6641471B1 (en) | 2000-09-19 | 2003-11-04 | Rodel Holdings, Inc | Polishing pad having an advantageous micro-texture and methods relating thereto |
JP2002192414A (ja) * | 2000-12-25 | 2002-07-10 | Toshiba Mach Co Ltd | 軟質発泡樹脂の切削加工方法 |
US6852020B2 (en) * | 2003-01-22 | 2005-02-08 | Raytech Innovative Solutions, Inc. | Polishing pad for use in chemical—mechanical planarization of semiconductor wafers and method of making same |
TW592890B (en) * | 2002-03-04 | 2004-06-21 | Taiwan Semiconductor Mfg | Copper process chemical mechanical polishing method |
TWI228768B (en) * | 2002-08-08 | 2005-03-01 | Jsr Corp | Processing method of polishing pad for semiconductor wafer and polishing pad for semiconductor wafer |
JP4401096B2 (ja) * | 2003-03-26 | 2010-01-20 | Dowaホールディングス株式会社 | 回路基板の製造方法 |
US6783436B1 (en) * | 2003-04-29 | 2004-08-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Polishing pad with optimized grooves and method of forming same |
US6843711B1 (en) * | 2003-12-11 | 2005-01-18 | Rohm And Haas Electronic Materials Cmp Holdings, Inc | Chemical mechanical polishing pad having a process-dependent groove configuration |
US7131895B2 (en) * | 2005-01-13 | 2006-11-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | CMP pad having a radially alternating groove segment configuration |
US7182677B2 (en) * | 2005-01-14 | 2007-02-27 | Applied Materials, Inc. | Chemical mechanical polishing pad for controlling polishing slurry distribution |
TW200720001A (en) * | 2005-08-10 | 2007-06-01 | Rohm & Haas Elect Mat | Method of forming grooves in a chemical mechanical polishing pad utilizing laser ablation |
-
2006
- 2006-11-03 US US11/592,910 patent/US7234224B1/en active Active
-
2007
- 2007-10-25 JP JP2007277365A patent/JP5248837B2/ja active Active
- 2007-11-01 TW TW096141135A patent/TWI402904B/zh active
Also Published As
Publication number | Publication date |
---|---|
US7234224B1 (en) | 2007-06-26 |
JP2008137148A (ja) | 2008-06-19 |
TW200834699A (en) | 2008-08-16 |
TWI402904B (zh) | 2013-07-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5248837B2 (ja) | 研磨パッドの曲線状溝加工 | |
US7140088B2 (en) | Turning tool for grooving polishing pad, apparatus and method of producing polishing pad using the tool, and polishing pad produced by using the tool | |
US7516536B2 (en) | Method of producing polishing pad | |
US6685548B2 (en) | Grooved polishing pads and methods of use | |
US5718615A (en) | Semiconductor wafer dicing method | |
US7807252B2 (en) | Chemical mechanical polishing pad having secondary polishing medium capacity control grooves | |
US20020058469A1 (en) | Polishing pad having an advantageous micro-texture and methods relating thereto | |
WO2000063963A1 (en) | Non-abrasive conditioning for polishing pads | |
US7771251B2 (en) | Three-dimensional network for chemical mechanical polishing | |
US6620031B2 (en) | Method for optimizing the planarizing length of a polishing pad | |
KR20060067139A (ko) | 연마 매개체 이용을 향상시키도록 배열된 그루브들을포함하는 씨엠피 연마 패드 | |
JP2008062367A (ja) | 研磨装置、研磨パッド、研磨方法 | |
WO2010027333A1 (en) | Electroformed thin-wall cutting saws and core drills impregnated with abrasives | |
KR100781026B1 (ko) | 초연마식 가공 공구 및 사용 방법 | |
JPWO2005023487A1 (ja) | 研磨パッドおよびその製造方法と製造装置 | |
JP2007061961A (ja) | ラッピング定盤の製作方法及びメカニカルラッピング方法 | |
JPH03196976A (ja) | 切断砥石及びその製造方法 | |
JP2001018164A (ja) | 半導体デバイス加工用硬質発泡樹脂溝付パッド及びそのパッド旋削溝加工用工具 | |
US6283836B1 (en) | Non-abrasive conditioning for polishing pads | |
JP3988400B2 (ja) | 端面研削用砥石車のツルーイング方法 | |
JP2002184730A (ja) | 半導体デバイス加工用硬質発泡樹脂溝付パッド及びそのパッド旋削溝加工用工具 | |
KR100252338B1 (ko) | 절삭용공구및그공구를사용하는밀링머시인 | |
JP2006123018A (ja) | 面取り加工装置 | |
KR100500803B1 (ko) | 워크피스 연마 패드 및 워크피스 표면의 연마 방법 | |
Yanagihara et al. | Development of feedback-speed-control system of fixed-abrasive tool for mat-surface fabrication |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101006 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120711 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120717 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20121010 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20130402 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20130411 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5248837 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20160419 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |