JP5248284B2 - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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JP5248284B2
JP5248284B2 JP2008298326A JP2008298326A JP5248284B2 JP 5248284 B2 JP5248284 B2 JP 5248284B2 JP 2008298326 A JP2008298326 A JP 2008298326A JP 2008298326 A JP2008298326 A JP 2008298326A JP 5248284 B2 JP5248284 B2 JP 5248284B2
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substrate
discharge port
processing
valve body
pure water
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JP2010123874A (en
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篤史 大澤
賢治 天久
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Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
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Screen Holdings Co Ltd
Dainippon Screen Manufacturing Co Ltd
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本発明は、半導体ウエハや液晶表示装置用のガラス基板(以下、単に基板と称する)等の基板に対して、処理液により洗浄、エッチング等の処理を行った後にリンス処理を行う基板処理装置及び基板処理方法に関する。   The present invention relates to a substrate processing apparatus for performing a rinsing process on a substrate such as a semiconductor wafer or a glass substrate for a liquid crystal display device (hereinafter simply referred to as a substrate) after performing a process such as cleaning or etching with a processing liquid, and The present invention relates to a substrate processing method.

従来、この種の装置として、処理液を貯留し、基板を浸漬処理するための処理槽と、処理槽の底部に配設され、処理槽内に処理液を供給する噴出管と、処理槽の側壁に形成され、処理槽内に貯留している処理液を急速に排水する排出口と、排出口を閉塞する大きさを有する弁体及びこの弁体を進退させて、排出口を閉塞または開放させるエアシリンダを有する急速排水弁とを備えたものがある(例えば、特許文献1参照)。   Conventionally, as this type of apparatus, a processing tank for storing the processing liquid and immersing the substrate, a jet pipe disposed at the bottom of the processing tank and supplying the processing liquid into the processing tank, and a processing tank A discharge port formed on the side wall for quickly draining the processing liquid stored in the processing tank, a valve body having a size for closing the discharge port, and the valve body is moved forward and backward to close or open the discharge port. Some have a quick drain valve having an air cylinder (see, for example, Patent Document 1).

このような構成の装置では、処理槽中の処理液を急速排水する際に、エアシリンダを作動させて急速排水弁の弁体を排出口から離間させ、処理液を排出口から急速排水させている。
特許第3515894号公報(段落「0017」〜「0019」、図1及び図2)
In the apparatus having such a configuration, when the processing liquid in the processing tank is quickly drained, the air cylinder is operated so that the valve body of the quick drain valve is separated from the discharge port, and the processing liquid is quickly drained from the discharge port. Yes.
Japanese Patent No. 3515894 (paragraphs “0017” to “0019”, FIGS. 1 and 2)

しかしながら、このような構成を有する従来例の場合には、次のような問題がある。
すなわち、従来の装置は、弁体と排出口の密着性を高めるために、弁体にOリングが取り付けられている。そのため、急速排水弁を閉止させた状態で弁体と排出口との間に隙間が生じ、この隙間に処理液が滞留することがある。したがって、薬液を含む処理液で基板を処理した後、純水で洗浄処理を行う場合に、その隙間から処理液が処理槽内の純水に漏れ出して、純水の比抵抗が回復するのに長時間を要することがある。その結果、基板の洗浄処理が完了するまでに時間がかかり、スループットが低下することがある。
However, the conventional example having such a configuration has the following problems.
That is, in the conventional apparatus, an O-ring is attached to the valve body in order to improve the adhesion between the valve body and the discharge port. Therefore, a gap is formed between the valve body and the discharge port in a state where the quick drain valve is closed, and the processing liquid may stay in this gap. Therefore, when a substrate is treated with a treatment liquid containing a chemical solution and then washed with pure water, the treatment liquid leaks into the pure water in the treatment tank from the gap, and the specific resistance of pure water is restored. May take a long time. As a result, it takes time to complete the substrate cleaning process, and the throughput may decrease.

本発明は、このような事情に鑑みてなされたものであって、急速排水弁における液溜まりを洗浄除去することにより、急速排水弁の構造に起因する処理槽への液漏れを防止して、基板処理のスループットを向上させることができる基板処理装置及び基板処理方法を提供することを目的とする。   The present invention has been made in view of such circumstances, by washing and removing the liquid pool in the quick drain valve, to prevent liquid leakage to the treatment tank due to the structure of the quick drain valve, It is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of improving the throughput of substrate processing.

本発明は、このような目的を達成するために、次のような構成をとる。
すなわち、請求項1に記載の発明は、処理液に基板を浸漬させて基板に対して処理を行う基板処理装置において、処理液を貯留し、基板に対して浸漬処理を行うための処理槽と、純水や薬液を含む処理液を前記処理槽に供給する処理液供給手段と、前記処理槽に設けられ、前記処理槽内に貯留している処理液を排出するための排出口と、前記排出口を閉塞する大きさを有する弁体と、前記弁体または前記排出口に取り付けられたシール部材と、前記弁体を前記排出口に対して進退させる駆動手段と、前記駆動手段に圧縮空気を第1の流量で供給する第1供給管と、前記駆動手段に圧縮空気を第1の流量よりも小流量である第2の流量で供給する第2供給管と、前記処理槽内において薬液を含む処理液で基板を処理した後、前記処理槽に純水を処理液として供給して基板をリンス処理している間、前記第2供給管を介して前記駆動手段に圧縮空気を供給させて、前記弁体を前記排出口から微小距離だけ離間させ、前記処理槽内の純水を少量だけ所定時間排出させた後に前記第1供給管を介して前記駆動手段に圧縮空気を供給させて前記弁体を前記排出口に押圧させる制御手段と、を備えていることを特徴とするものである。
In order to achieve such an object, the present invention has the following configuration.
That is, the invention described in claim 1 is a substrate processing apparatus that performs processing on a substrate by immersing the substrate in the processing liquid, and a processing tank for storing the processing liquid and performing the immersion processing on the substrate; A treatment liquid supply means for supplying a treatment liquid containing pure water or a chemical solution to the treatment tank; a discharge port provided in the treatment tank for discharging the treatment liquid stored in the treatment tank; A valve body having a size for closing the discharge port; a seal member attached to the valve body or the discharge port; drive means for moving the valve body forward and backward with respect to the discharge port; and compressed air to the drive means In the treatment tank, a first supply pipe that supplies compressed air to the driving means at a second flow rate that is smaller than the first flow rate, and a chemical solution in the processing tank. After treating the substrate with a treatment liquid containing, pure water is added to the treatment tank. While rinsing the substrate by supplying a physical solution, wherein by supplying compressed air to the drive means via the second supply pipe, by a minute distance by separating the valve body from the outlet, the processing Control means for causing the drive means to supply compressed air through the first supply pipe to discharge the pure water in the tank for a predetermined time and pressing the valve body against the discharge port . It is characterized by this.

[作用・効果]請求項1に記載の発明によれば、制御手段は、処理液供給手段から薬液を含む処理液を処理槽に供給させ、その処理液に基板を浸漬させて基板を処理した後、処理液供給手段から純水を処理槽に供給して基板をリンス処理させる。その際に、処理槽から薬液を含む処理液を排出しているので、シール部材を含む周辺部には薬液が付着した状態である。制御手段は、リンス処理を行っている間、第2供給管を介して前記駆動手段に圧縮空気を供給させて、弁体を排出口から微小距離だけ離間させて純水を処理槽から少量だけ排出させるので、その際に、シール部材を含む周辺部に付着している薬液が洗い流される。したがって、リンス処理において純水の比抵抗が短時間で回復するので、基板の洗浄処理を短時間で行うことができ、スループットを向上させることができる。 [Operation / Effect] According to the invention described in claim 1, the control means supplies the treatment liquid containing the chemical liquid from the treatment liquid supply means to the treatment tank, and the substrate is processed by immersing the substrate in the treatment liquid. Thereafter, the substrate is rinsed by supplying pure water from the treatment liquid supply means to the treatment tank. At that time, since the treatment liquid containing the chemical liquid is discharged from the treatment tank, the chemical liquid is attached to the peripheral portion including the seal member. The control means supplies compressed air to the drive means via the second supply pipe during the rinsing process, and separates the valve element from the discharge port by a minute distance so that pure water is only a small amount from the treatment tank. Since it is made to discharge | emit, the chemical | medical solution adhering to the peripheral part containing a sealing member is washed away in that case. Accordingly, since the specific resistance of pure water is recovered in a short time in the rinsing process, the substrate cleaning process can be performed in a short time, and the throughput can be improved.

なお、ここでいう微小距離とは、全開の際の距離よりも短く、処理槽内の純水を少量だけ排出口から流下させることができる距離をいう。   In addition, the minute distance here is shorter than the distance at the time of full opening, and means the distance at which a small amount of pure water in the treatment tank can flow down from the discharge port.

また、本発明において、前記制御手段は、前記駆動手段を所定時間だけ操作することが好ましい(請求項2)。ここでいう所定時間とは、例えば、数秒〜数十秒程度の短時間をいい、これにより処理槽内の処理液面が極端に低下するのを防止でき、基板のリンス処理に支障を与えることがない。   In the present invention, it is preferable that the control means operates the driving means for a predetermined time (claim 2). The predetermined time here refers to, for example, a short time of several seconds to several tens of seconds, thereby preventing the processing liquid level in the processing tank from being extremely lowered, and hindering the rinsing processing of the substrate. There is no.

また、本発明において、前記制御手段は、前記排出口から排出される処理液の流量が、前記処理液供給手段から前記処理槽へ供給される純水供給量よりも少ない量となるように、前記駆動手段を操作することが好ましい(請求項3)。純水の供給量よりも少ない量を排出させるので、リンス処理における処理液面の低下を防止でき、基板のリンス処理に支障が生じることを防止できる。 Further, in the present invention, the control means is configured so that the flow rate of the processing liquid discharged from the discharge port is smaller than the pure water supply amount supplied from the processing liquid supply means to the processing tank. It is preferable to operate the driving means (claim 3). Since an amount smaller than the supply amount of pure water is discharged, it is possible to prevent a decrease in the processing liquid level in the rinsing process, and to prevent the substrate rinsing process from being hindered.

また、本発明において、前記制御手段は、前記駆動手段を、閉止用の全閉操作と、排出用の全開操作と、スローリーク用の微小開操作との三段階で操作することが好ましい(請求項4)。全閉操作と、全開操作と、微小開操作とを使い分けることにより、処理槽に処理液を貯留することと、処理槽に貯留する処理液を排出することと、処理液を少量だけ排出させることとを行うことができる。   In the present invention, it is preferable that the control means operates the driving means in three stages of a fully closing operation for closing, a fully opening operation for discharging, and a micro opening operation for slow leak. Item 4). By using the fully-closed operation, the fully-opened operation, and the micro-opening operation properly, storing the processing liquid in the processing tank, discharging the processing liquid stored in the processing tank, and discharging only a small amount of the processing liquid And can be done.

また、請求項5に記載の発明は、処理液に基板を浸漬させて基板に対して処理を行う基板処理方法において、処理槽の排出口を急速排水弁の弁体で閉止した状態で、処理槽に貯留されている薬液を含む処理液に基板を浸漬させて基板に対して処理を行う過程と、急速排水弁の弁体を排出口から離間させて前記処理槽内の処理液を排出口から排出するとともに、処理槽の排出口を急速排水弁の弁体で閉止した状態で、純水を処理液として前記処理槽に供給する過程と、純水を含む処理液で基板に対してリンス処理を行う過程と、前記リンス処理の間、急速排水弁の弁体を排出口から微小距離だけ離間させて、純水を少量だけ所定時間排出させた後に急速排水弁の弁体を排出口に押圧させる過程と、リンス処理を終えるとともに、急速排水弁の弁体を排出口から大きく離間させて全処理液を排出させる過程と、を備えていることを特徴とするものである。 According to a fifth aspect of the present invention, there is provided a substrate processing method for performing processing on a substrate by immersing the substrate in a processing solution, in a state where the discharge port of the processing tank is closed by a valve body of a quick drain valve. A process in which a substrate is immersed in a processing solution containing a chemical solution stored in a tank and the substrate is processed, and the valve body of the quick drain valve is separated from the discharge port to discharge the processing solution in the processing tank. And a process of supplying pure water to the treatment tank as a treatment liquid in a state where the discharge port of the treatment tank is closed by the valve body of the quick drain valve, and rinsing the substrate with the treatment liquid containing pure water During the process of rinsing and the rinsing process, the valve body of the quick drain valve is separated from the discharge port by a small distance, and a small amount of pure water is discharged for a predetermined time. a process of pressed, together with the finished rinsing, the quick drain valve valve A step of discharging the entire treatment liquid greatly spaced from the discharge port, and is characterized in that it comprises a.

[作用・効果]請求項5に記載の発明によれば、薬液を含む処理液を処理槽に供給させ、その処理液に基板を浸漬させて基板を処理した後、その処理液を処理槽から全て排出させるとともに、純水を処理槽に供給して基板をリンス処理させる。その際に、処理槽から薬液を含む処理液を排出しているので、急速排水弁の弁体と排出口の隙間には薬液が付着した状態である。そこでリンス処理を行っている間、急速排水弁の弁体を排出口から微小距離だけ開放させて純水を少量だけ排出させるので、その際に、急速排水弁の弁体と排出口との隙間に付着している薬液が洗い流される。その後、急速排水弁の弁体を排出口に押圧させ、リンス処理を終えるとともに、急速排水弁を全開にして処理槽内の処理液を全て排出させる。したがって、リンス処理において純水の比抵抗が短時間で回復するので、基板の洗浄処理を短時間で行うことができ、スループットを向上させることができる。
[Operation / Effect] According to the invention described in claim 5, after the treatment liquid containing the chemical solution is supplied to the treatment tank and the substrate is immersed in the treatment liquid to treat the substrate, the treatment liquid is removed from the treatment tank. All are discharged, and pure water is supplied to the treatment tank to rinse the substrate. At this time, since the processing liquid containing the chemical liquid is discharged from the processing tank, the chemical liquid is attached to the gap between the valve body of the quick drain valve and the discharge port. Therefore, during the rinsing process, the valve body of the quick drain valve is opened a small distance from the discharge port to discharge only a small amount of pure water. At that time, the gap between the valve body of the quick drain valve and the discharge port The chemicals adhering to are washed away. Thereafter, the valve body of the quick drain valve is pressed against the discharge port to finish the rinsing process, and the quick drain valve is fully opened to discharge all the processing liquid in the processing tank. Accordingly, since the specific resistance of pure water is recovered in a short time in the rinsing process, the substrate cleaning process can be performed in a short time, and the throughput can be improved.

また、本発明において、前記純水を少量だけ排出させる過程は、所定時間だけ行われることが好ましい(請求項6)。   In the present invention, it is preferable that the process of discharging only a small amount of the pure water is performed for a predetermined time.

本発明に係る基板処理装置によれば、制御手段は、処理液供給手段から薬液を含む処理液を処理槽に供給させ、その処理液に基板を浸漬させて基板を処理した後、処理液供給手段から純水を処理槽に供給して基板をリンス処理させる。その際に、処理槽から排出口を介して薬液を含む処理液を排出しているので、シール部材を含む周辺部には薬液が付着した状態である。制御手段は、リンス処理を行っている間、駆動手段を操作して、弁体を排出口から微小距離だけ離間させて純水を少量だけ排出させるので、その際に、シール部材を含む周辺部に付着している薬液が洗い流される。したがって、リンス処理において純水の比抵抗が短時間で回復するので、基板の洗浄処理を短時間で行うことができ、スループットを向上させることができる。   According to the substrate processing apparatus of the present invention, the control means supplies the processing liquid containing the chemical liquid from the processing liquid supply means to the processing tank, immerses the substrate in the processing liquid and processes the substrate, and then supplies the processing liquid. Pure water is supplied from the means to the treatment tank to rinse the substrate. At that time, since the processing liquid including the chemical liquid is discharged from the processing tank through the discharge port, the chemical liquid is attached to the peripheral portion including the seal member. During the rinsing process, the control means operates the drive means to separate the valve body from the discharge port by a minute distance and discharge only a small amount of pure water. The chemicals adhering to are washed away. Accordingly, since the specific resistance of pure water is recovered in a short time in the rinsing process, the substrate cleaning process can be performed in a short time, and the throughput can be improved.

以下、図面を参照して本発明の一実施例について説明する。
図1は、実施例に係る基板処理装置の概略構成を示す縦断面図である。
An embodiment of the present invention will be described below with reference to the drawings.
FIG. 1 is a longitudinal sectional view illustrating a schematic configuration of a substrate processing apparatus according to an embodiment.

この基板処理装置は、処理槽1を備え、この処理槽1により基板Wに対して処理液による処理を行うためのものである。処理槽1は、内槽3と、この内槽3の周りを囲う外槽5とを備えている。内槽3は、処理液を貯留するとともに、基板Wを収容可能に構成されている。内槽3の底部には、処理液を供給するための一対の噴出管7が、複数枚の基板Wが整列されている方向に取り付けられている。なお、図1においては、図示の関係上、一対の噴出管7のうち一方のみを示している。リフタ9は、複数枚の基板Wを起立姿勢で保持する。このリフタ9は、基板Wの下縁を当接支持する保持部11を備え、内槽3の内部にあたる「処理位置」(図1に描かれた位置)と、内槽1の上方にあたる「待機位置」とにわたって昇降可能である。   This substrate processing apparatus is provided with a processing tank 1 for processing a substrate W with a processing liquid in the processing tank 1. The processing tank 1 includes an inner tank 3 and an outer tank 5 that surrounds the inner tank 3. The inner tank 3 is configured to store the processing liquid and to accommodate the substrate W. A pair of ejection pipes 7 for supplying the processing liquid is attached to the bottom of the inner tank 3 in the direction in which the plurality of substrates W are aligned. In FIG. 1, only one of the pair of ejection pipes 7 is shown for the purpose of illustration. The lifter 9 holds a plurality of substrates W in an upright posture. The lifter 9 includes a holding portion 11 that abuts and supports the lower edge of the substrate W, and a “processing position” (position illustrated in FIG. 1) that is inside the inner tank 3 and a “standby” that is above the inner tank 1. The position can be raised and lowered.

なお、噴出管7が本発明における「処理液供給手段」に相当する。   The ejection pipe 7 corresponds to the “processing liquid supply means” in the present invention.

内槽3の一側壁(図1における右側壁)には排出口13が形成され、排出口13は、その外側にフランジ15を備えている。このフランジ15には、リング状のシール部材17が取り付けられている。シール部材17は、処理液に含まれている薬液に耐性を備えた材料で構成されている。   A discharge port 13 is formed in one side wall (the right side wall in FIG. 1) of the inner tub 3, and the discharge port 13 includes a flange 15 on the outside thereof. A ring-shaped seal member 17 is attached to the flange 15. The seal member 17 is made of a material having resistance to the chemical liquid contained in the processing liquid.

外槽5は、内槽3の下面及び側面全周にわたって囲うものであり、底部の一部位に廃液口19を備えている。また、外槽5の一側面のうち、排出口13に対向する位置には、QDR弁21が取り付けられている。   The outer tub 5 surrounds the entire lower surface and side surface of the inner tub 3, and includes a waste liquid port 19 at one part of the bottom. A QDR valve 21 is attached to a position on one side surface of the outer tub 5 that faces the discharge port 13.

QDR弁21は、弁体23と、ベローズ25と、圧縮コイルバネ27と、弁軸29と、ハウジング31と、エアシリンダ33とを備えている。弁体23は、排出口13を閉塞する大きさを備えている。この弁体23の側面中央には、弁軸29が圧縮コイルバネ27を介して取り付けられている。圧縮コイルバネ7及び弁軸29はベローズ25で囲われ、弁軸29は外槽5の側壁を貫通してハウジング31で囲われている。弁軸29は、エアシリンダ33の作動軸に連動連結されており、エアシリンダ33を作動させることにより、弁体23を排出口13に対して進退させる。   The QDR valve 21 includes a valve body 23, a bellows 25, a compression coil spring 27, a valve shaft 29, a housing 31, and an air cylinder 33. The valve body 23 has a size for closing the discharge port 13. A valve shaft 29 is attached to the center of the side surface of the valve body 23 via a compression coil spring 27. The compression coil spring 7 and the valve shaft 29 are surrounded by a bellows 25, and the valve shaft 29 passes through the side wall of the outer tub 5 and is surrounded by a housing 31. The valve shaft 29 is interlocked with the operating shaft of the air cylinder 33, and moves the valve body 23 forward and backward with respect to the discharge port 13 by operating the air cylinder 33.

なお、QDR弁21が本発明における「急速排水弁」に相当し、エアシリンダ33が本発明における「駆動手段」に相当する。   The QDR valve 21 corresponds to the “quick drain valve” in the present invention, and the air cylinder 33 corresponds to the “driving means” in the present invention.

エアシリンダ33は、二つの吸排口35,37を備えている。これらの吸排口35,37には、それぞれ吸排管39の一端側が連通接続されており、他端側が電磁弁41に連通接続されている。電磁弁41の供給口には、圧縮空気が供給され、与えられた切り換え信号に応じていずれか一方の吸排管39だけに圧縮空気を供給する。各吸配管39には、大気開放弁43が取り付けられている。大気開放弁43は、与えられた開放信号に応じて吸排管39内部を大気に連通させる。   The air cylinder 33 includes two intake / exhaust ports 35 and 37. One end of an intake / exhaust pipe 39 is connected to each of the intake / exhaust ports 35 and 37, and the other end is connected to an electromagnetic valve 41. Compressed air is supplied to the supply port of the electromagnetic valve 41, and the compressed air is supplied only to one of the intake / exhaust pipes 39 in accordance with a given switching signal. An air release valve 43 is attached to each suction pipe 39. The atmosphere release valve 43 communicates the inside of the intake / exhaust pipe 39 to the atmosphere according to the given release signal.

電磁弁41の供給口には、圧縮空気が供給される空気供給管45の一端側が連通接続されている。空気供給管45には、三方弁46が取り付けられており、圧縮空気源に連通された第1供給管47と第2供給管49とが取り付けられている。第1供給管47には、予め流量が第1の流量に設定された流量制御弁51が取り付けられ、第2供給管49には、予め流量が第2の流量に設定された流量制御弁53が取り付けられている。なお、第1の流量は、排出口13を閉塞する位置に弁体23を進出させ、第2の流量は、第1の流量よりも小流量であって、弁体23を排出口13に微小距離だけ離間した位置にまで進出させる流量となるように設定されている。これらの場合には、圧縮空気を吸排口37に供給する。なお、弁体23を排出口13から大きく離間させるには、第1の流量で吸排口35に圧縮空気を供給する。   One end side of an air supply pipe 45 to which compressed air is supplied is connected to the supply port of the electromagnetic valve 41. A three-way valve 46 is attached to the air supply pipe 45, and a first supply pipe 47 and a second supply pipe 49 connected to a compressed air source are attached. A flow rate control valve 51 whose flow rate is set to a first flow rate is attached to the first supply pipe 47, and a flow rate control valve 53 whose flow rate is set to a second flow rate is set to the second supply pipe 49 in advance. Is attached. Note that the first flow rate causes the valve body 23 to advance to a position where the discharge port 13 is closed, and the second flow rate is smaller than the first flow rate, and the valve body 23 enters the discharge port 13 to be minute. The flow rate is set to advance to a position separated by a distance. In these cases, compressed air is supplied to the intake / exhaust port 37. In order to largely separate the valve body 23 from the discharge port 13, compressed air is supplied to the intake / discharge port 35 at the first flow rate.

上述した噴出管7には、供給管55の一端側が連通接続され、他端側が処理液供給源57に連通接続されている。この供給管55には、流量を制御するための流量制御弁59が取り付けられている。処理液供給源57は、例えば、フッ化水素酸(HF)や、純水を単独あるいは混合して供給可能である。   One end side of the supply pipe 55 is connected to the ejection pipe 7 described above, and the other end side thereof is connected to the processing liquid supply source 57. A flow rate control valve 59 for controlling the flow rate is attached to the supply pipe 55. The treatment liquid supply source 57 can supply, for example, hydrofluoric acid (HF) or pure water alone or in combination.

上述したリフタ9、QDR弁21、電磁弁41、大気開放弁43、流量制御弁51,53,59などは制御部61によって統括的に制御される。制御部61は、図示しないメモリやCPUなどから構成されており、メモリには基板Wを処理するための手順を規定したレシピや各部の制御プログラムなどが予め記憶されている。   The above-described lifter 9, QDR valve 21, electromagnetic valve 41, atmosphere release valve 43, flow control valves 51, 53, 59 and the like are controlled by the control unit 61. The control unit 61 includes a memory, a CPU, and the like (not shown), and a recipe that prescribes a procedure for processing the substrate W, a control program for each unit, and the like are stored in advance in the memory.

なお、制御部61が本発明における「制御手段」に相当する。   The control unit 61 corresponds to the “control unit” in the present invention.

制御部61は、QDR弁21を以下のように三段階に操作する。ここで、図2を参照する。なお、図2は、QDR弁の動作説明図であり、(a)は全閉時を、(b)は全開時を、(c)は微小開時を表す。   The controller 61 operates the QDR valve 21 in three stages as follows. Reference is now made to FIG. 2A and 2B are diagrams for explaining the operation of the QDR valve. FIG. 2A shows a fully closed state, FIG. 2B shows a fully opened state, and FIG. 2C shows a minute opened state.

全閉時(図2(a))
制御部61は、三方弁46を第1供給管47側に連通させ、流量制御弁51を開放して電磁弁41の供給口に対して圧縮空気を第1の流量で供給するとともに、電磁弁41を操作して吸排口37に対して圧縮空気を送り込む。これにより、弁体23がシール部材17を強く押圧して排出口13を閉止する。したがって、内槽3に貯留している処理液が内槽3から漏れ出すことがない。
When fully closed (Fig. 2 (a))
The control unit 61 communicates the three-way valve 46 to the first supply pipe 47 side, opens the flow control valve 51 and supplies compressed air to the supply port of the electromagnetic valve 41 at a first flow rate. 41 is operated to send compressed air into the intake / exhaust port 37. As a result, the valve body 23 strongly presses the seal member 17 to close the discharge port 13. Therefore, the processing liquid stored in the inner tank 3 does not leak from the inner tank 3.

全開時(図2(b))
制御部61は、三方弁46を第1供給管47側に連通させ、流量制御弁51を開放して電磁弁41の供給口に対して圧縮空気を第1の流量で供給するとともに、電磁弁41を操作して吸排口35に対して圧縮空気を送り込む。これにより、弁体23がシール部材17から大きく離間して、排出口13を開放させる。したがって、内槽3に貯留している処理液が内槽3から急速排水される。
When fully open (Fig. 2 (b))
The control unit 61 communicates the three-way valve 46 to the first supply pipe 47 side, opens the flow control valve 51 and supplies compressed air to the supply port of the electromagnetic valve 41 at a first flow rate. 41 is operated to send compressed air into the intake / exhaust port 35. As a result, the valve body 23 is greatly separated from the seal member 17 to open the discharge port 13. Therefore, the processing liquid stored in the inner tank 3 is quickly drained from the inner tank 3.

微小開時(図2(c))
制御弁61は、三方弁46を第2供給管49側に連通させ、流量制御弁53を開放して電磁弁41の供給口に対して圧縮空気を第2の流量で供給するとともに、電磁弁41を操作して吸排管37に対して圧縮空気を送り込む。これにより、弁体23がシール部材17に対して当接することなく微小距離dだけ離間された位置に移動され、排出口13を僅かに開放させる。したがって、内槽3に貯留している処理液が微小流量で排出口13から排水される(スローリーク)。この微小距離dは、内槽3の容積と、噴出管7から供給される純水の流量に応じて設定されるものであり、例えば、純水の供給流量よりも排出される流量が少なくなるように、微小距離dが設定される。これにより、内槽3の処理液に浸漬されている基板Wが液面から露出する不都合を防止できる。
When micro-open (Fig. 2 (c))
The control valve 61 communicates the three-way valve 46 to the second supply pipe 49 side, opens the flow control valve 53 and supplies compressed air to the supply port of the electromagnetic valve 41 at a second flow rate. 41 is operated to feed compressed air into the intake / exhaust pipe 37. Thereby, the valve body 23 is moved to a position separated by a minute distance d without coming into contact with the seal member 17, and the discharge port 13 is slightly opened. Therefore, the processing liquid stored in the inner tank 3 is drained from the discharge port 13 at a minute flow rate (slow leak). The minute distance d is set according to the volume of the inner tank 3 and the flow rate of pure water supplied from the ejection pipe 7, and for example, the flow rate discharged is smaller than the supply flow rate of pure water. Thus, the minute distance d is set. Thereby, the inconvenience that the substrate W immersed in the processing liquid of the inner tank 3 is exposed from the liquid surface can be prevented.

次に、図3を参照して、上述した装置の動作について説明する。なお、図3は、処理時におけるタイムチャートである。   Next, the operation of the above-described apparatus will be described with reference to FIG. FIG. 3 is a time chart at the time of processing.

まず、制御部61は、QDR弁21を全閉操作(図2(a))し、排出口13を閉止させた状態で、流量制御弁59を操作して、所定の流量で薬液を含む処理液を内槽3に供給する(t0時点)。内槽3が処理液で満杯になると(t1時点)、処理液は内槽3を溢れ、外槽5の廃液口19を介して排出される。このようにして内槽3が処理液で満たされた後、制御部61は、未処理の複数枚の基板Wを保持したリフタ9を内槽3内の処理位置にまで下降させる。この状態を所定時間だけ維持して、基板Wに対して薬液処理を行う(t2時点まで)。次に制御部61は、流量制御弁59を閉止して、薬液を含む処理液の供給を停止させるとともに、QDR弁21を全開操作(図2(b))し、排出口13を全開にさせる(t2時点)。すると、内槽3に貯留している、薬液を含む処理液が排出口13を介して急速排水される(t2〜t3時点)。なお、このとき、処理液を全て排出しても処理液がシール部材17を含むその周辺に付着するので、液滴が残留した状態となる。   First, the control unit 61 operates the flow rate control valve 59 in a state where the QDR valve 21 is fully closed (FIG. 2 (a)) and the discharge port 13 is closed, so that the chemical solution is contained at a predetermined flow rate. The liquid is supplied to the inner tank 3 (at time t0). When the inner tank 3 is filled with the processing liquid (at time t1), the processing liquid overflows the inner tank 3 and is discharged through the waste liquid port 19 of the outer tank 5. After the inner tub 3 is filled with the processing liquid in this way, the control unit 61 lowers the lifter 9 holding a plurality of unprocessed substrates W to the processing position in the inner tub 3. This state is maintained for a predetermined time, and the chemical solution processing is performed on the substrate W (until time t2). Next, the control unit 61 closes the flow rate control valve 59 to stop the supply of the processing liquid including the chemical liquid, and fully opens the QDR valve 21 (FIG. 2B) to fully open the discharge port 13. (At time t2). Then, the processing liquid containing the chemical liquid stored in the inner tank 3 is quickly drained through the discharge port 13 (at time t2 to t3). At this time, even if all of the processing liquid is discharged, the processing liquid adheres to the periphery including the seal member 17, so that droplets remain.

制御部61は、QDR弁21を全閉操作(図2(a))し、流量制御弁59を開放して、所定流量で純水を処理液として供給する(t3時点)。内槽3が純水で満たされ、溢れた純水が排出され始めたt4時点から所定時間T1が経過した後、QDR弁21を微小開操作(図2(c))し、排出口13と弁体23との間に、微小間隔dをおいて開放させる(t5時点)。すると、微小間隔dから純水が流出するが、その際にシール部材17及びその周辺に付着している処理液が洗い流される。これを所定時間T2だけ継続した後、t6時点でQDR弁21を全閉操作(図2(a))する。そして、図示しない比抵抗計の比抵抗値が規定値にまで上昇し、洗浄が完了したと判断されるt7時点まで純水によるリンス処理を継続し、その後、制御部61はQDR弁21を全開操作(図2(b))し、内槽3の純水を急速排水させる(t7〜t8時点)。   The control unit 61 fully closes the QDR valve 21 (FIG. 2A), opens the flow rate control valve 59, and supplies pure water as a processing liquid at a predetermined flow rate (at time t3). After a predetermined time T1 has elapsed from time t4 when the inner tank 3 is filled with pure water and overflowing pure water begins to be discharged, the QDR valve 21 is slightly opened (FIG. 2 (c)), and the discharge port 13 The valve body 23 is opened with a minute interval d (at time t5). Then, although pure water flows out from the minute interval d, the treatment liquid adhering to the seal member 17 and its periphery is washed away. After this is continued for a predetermined time T2, the QDR valve 21 is fully closed at time t6 (FIG. 2 (a)). Then, the resistivity value of a resistivity meter (not shown) rises to a specified value, and the rinsing process with pure water is continued until time t7 when it is determined that the cleaning is completed, and then the control unit 61 fully opens the QDR valve 21. The operation (FIG. 2 (b)) is performed to rapidly drain the pure water in the inner tank 3 (at time t7 to t8).

なお、上記の所定時間T2は、微小間隔dにより排出される純水の流量及び噴出管7からの純水供給量を考慮して、内槽3の液面が低下して基板Wが露出しない程度の時間である。また、微小開にするタイミングは、t4時点から所定時間T1をおくことなく、t4時点から行ってもよい。t4時点から所定時間T1をおいて微小開にするのは、基板Wの全体が迅速に純水で覆われることを優先しているからであるが、純水を供給し始めるt3時点から満杯となるt4時点までの間に微小開とするようにしてもよい。   The predetermined time T2 takes into consideration the flow rate of pure water discharged at a minute interval d and the amount of pure water supplied from the ejection pipe 7, and the liquid level in the inner tank 3 is lowered so that the substrate W is not exposed. It is about time. Further, the timing of the minute opening may be performed from time t4 without a predetermined time T1 from time t4. The reason why the minute opening is made after a predetermined time T1 from the time point t4 is because priority is given to the entire substrate W being covered quickly with pure water, but it is full from the time point t3 when supplying pure water is started. A minute opening may be made until the time t4.

制御部61は、リフタ9を処理位置から待機位置にまで上昇させて、基板Wに対する薬液・リンス処理を完了させる。   The controller 61 raises the lifter 9 from the processing position to the standby position, and completes the chemical solution / rinsing process for the substrate W.

上述したように、本実施例装置によると、制御部61は、噴出管7から薬液を含む処理液を内槽3に供給させ、その処理液に基板Wを浸漬させて基板Wを処理した後、噴出管7から純水を内槽3に供給して基板Wをリンス処理させる。その際に、内槽3から薬液を含む処理液を排出しているので、シール部材17を含む周辺部には薬液が付着した状態である。制御部61は、リンス処理を行っている間、エアシリンダ33を操作して、弁体23を排出口13から微小距離dだけ離間させて純水を少量だけ排出させるので、その際に、シール部材17を含む周辺部に付着している薬液が純水により洗い流される。したがって、リンス処理において純水の比抵抗が短時間で回復するので、基板Wの洗浄処理を短時間で行うことができ、スループットを向上させることができる。   As described above, according to the apparatus of the present embodiment, the control unit 61 supplies the processing liquid containing the chemical liquid from the ejection pipe 7 to the inner tank 3 and immerses the substrate W in the processing liquid to process the substrate W. Then, pure water is supplied from the ejection pipe 7 to the inner tank 3 to rinse the substrate W. At that time, since the processing liquid containing the chemical liquid is discharged from the inner tank 3, the chemical liquid is attached to the peripheral portion including the seal member 17. The control unit 61 operates the air cylinder 33 during the rinsing process to separate the valve body 23 from the discharge port 13 by a minute distance d and discharge a small amount of pure water. The chemical solution adhering to the peripheral portion including the member 17 is washed away with pure water. Accordingly, since the specific resistance of pure water is recovered in a short time in the rinsing process, the cleaning process of the substrate W can be performed in a short time, and the throughput can be improved.

ここで、図4を参照して、従来例との比較を行う。図4は、従来例と本発明との比較であり、比抵抗の変化を示すグラフである。   Here, with reference to FIG. 4, a comparison with a conventional example is performed. FIG. 4 is a graph showing a comparison between the conventional example and the present invention and showing a change in specific resistance.

なお、サンプルは基板Wにフォトレジストを被着したものであり、その基板Wをフッ化水素酸中に4120秒にわたって浸漬させて薬液処理を行った後、純水でリンス処理を行い、その際の比抵抗の変化を調べた。本発明のサンプルは、微小開を11秒間、13秒間、17秒間、19秒間等について行った。   The sample is obtained by applying a photoresist to the substrate W. After the substrate W is immersed in hydrofluoric acid for 4120 seconds and subjected to a chemical treatment, a rinse treatment is performed with pure water. The change in specific resistance was investigated. The sample of the present invention was finely opened for 11 seconds, 13 seconds, 17 seconds, 19 seconds, and the like.

図4のグラフから明らかなように、従来例では、リンス処理が1500秒経過しても、比抵抗が6〜12[MΩ・cm]程度までしか上昇しない一方、本発明では、700秒程度で14[MΩ・cm]程度にまで上昇していることが分かる。このように、上述した微小開操作を行うことによって、シール部材17及びその周辺に付着した処理液が洗い流されることによる効果が明白である。   As is apparent from the graph of FIG. 4, in the conventional example, the specific resistance increases only to about 6 to 12 [MΩ · cm] even after the rinsing process has elapsed for 1500 seconds. It turns out that it has risen to about 14 [MΩ · cm]. Thus, by performing the above-described micro-opening operation, the effect of washing away the treatment liquid adhering to the seal member 17 and its periphery is obvious.

本発明は、上記実施形態に限られることはなく、下記のように変形実施することができる。   The present invention is not limited to the above embodiment, and can be modified as follows.

(1)上述した実施例では、処理槽1が内槽3及び外槽5を備えているが、内槽3のみで処理槽を構成している場合であっても同様の効果を奏する。   (1) Although the processing tank 1 includes the inner tank 3 and the outer tank 5 in the above-described embodiment, the same effect can be obtained even when the processing tank is constituted by the inner tank 3 alone.

(2)上述した実施例では、フランジ15にシール部材17を備えているが、弁体23にシール部材17を備えている構成であってもよい。   (2) Although the flange 15 includes the seal member 17 in the above-described embodiment, the valve body 23 may include the seal member 17.

(3)上述した実施例では、純水の供給流量よりも排出される流量が少なくなるように、微小距離d及び所定時間T2が設定されているが、内槽3の構造により、処理位置にある基板Wの上縁と液面までの距離が長い場合には、純水流量よりも排出される流量が多くなってもよい。   (3) In the above-described embodiment, the minute distance d and the predetermined time T2 are set so that the flow rate discharged is less than the supply flow rate of pure water. When the distance from the upper edge of a certain substrate W to the liquid surface is long, the flow rate discharged may be larger than the pure water flow rate.

(4)上述した実施例では、エアシリンダ33で弁体23を駆動しているが、リニアモータ等の駆動手段で弁体23を駆動する構成としてもよい。   (4) In the embodiment described above, the valve body 23 is driven by the air cylinder 33, but the valve body 23 may be driven by a driving means such as a linear motor.

実施例に係る基板処理装置の概略構成を示す縦断面図である。It is a longitudinal cross-sectional view which shows schematic structure of the substrate processing apparatus which concerns on an Example. QDR弁の動作説明図であり、(a)は全閉時を、(b)は全開時を、(c)は微小開時を表す。It is operation | movement explanatory drawing of a QDR valve, (a) at the time of a fully closed, (b) at the time of a full open, (c) represents the time at the time of a minute open. 処理時におけるタイムチャートである。It is a time chart at the time of a process. 従来例と本発明との比較であり、比抵抗の変化を示すグラフである。It is a comparison with a prior art example and this invention, and is a graph which shows the change of a specific resistance.

符号の説明Explanation of symbols

W … 基板
1 … 処理槽
3 … 内槽
5 … 外槽
7 … 噴出管
9 … リフタ
13 … 排出口
15 … フランジ
17 … シール部材
19 … 排液口
21 … QDR弁
23 … 弁体
25 … ベローズ
29 … 弁軸
33 … エアシリンダ
41 … 電磁弁
61 … 制御部
d … 微小距離
W ... Substrate 1 ... Processing tank 3 ... Inner tank 5 ... Outer tank 7 ... Jet pipe 9 ... Lifter 13 ... Discharge port 15 ... Flange 17 ... Seal member 19 ... Drain port 21 ... QDR valve 23 ... Valve body 25 ... Bellows 29 ... Valve shaft 33 ... Air cylinder 41 ... Solenoid valve 61 ... Control part d ... Minute distance

Claims (6)

処理液に基板を浸漬させて基板に対して処理を行う基板処理装置において、
処理液を貯留し、基板に対して浸漬処理を行うための処理槽と、
純水や薬液を含む処理液を前記処理槽に供給する処理液供給手段と、
前記処理槽に設けられ、前記処理槽内に貯留している処理液を排出するための排出口と、
前記排出口を閉塞する大きさを有する弁体と、
前記弁体または前記排出口に取り付けられたシール部材と、
前記弁体を前記排出口に対して進退させる駆動手段と、
前記駆動手段に圧縮空気を第1の流量で供給する第1供給管と、
前記駆動手段に圧縮空気を第1の流量よりも小流量である第2の流量で供給する第2供給管と、
前記処理槽内において薬液を含む処理液で基板を処理した後、前記処理槽に純水を処理液として供給して基板をリンス処理している間、前記第2供給管を介して前記駆動手段に圧縮空気を供給させて、前記弁体を前記排出口から微小距離だけ離間させ、前記処理槽内の純水を少量だけ所定時間排出させた後に前記第1供給管を介して前記駆動手段に圧縮空気を供給させて前記弁体を前記排出口に押圧させる制御手段と、
を備えていることを特徴とする基板処理装置。
In a substrate processing apparatus for processing a substrate by immersing the substrate in a processing solution,
A treatment tank for storing treatment liquid and performing immersion treatment on the substrate;
A treatment liquid supply means for supplying a treatment liquid containing pure water or a chemical solution to the treatment tank;
A discharge port provided in the treatment tank for discharging the treatment liquid stored in the treatment tank;
A valve body having a size for closing the discharge port;
A seal member attached to the valve body or the discharge port;
Drive means for advancing and retracting the valve body with respect to the discharge port;
A first supply pipe for supplying compressed air to the driving means at a first flow rate;
A second supply pipe that supplies compressed air to the drive means at a second flow rate that is smaller than the first flow rate;
After the substrate is processed with a processing liquid containing a chemical in the processing tank, the drive means is supplied via the second supply pipe while the substrate is rinsed by supplying pure water as the processing liquid to the processing tank. Compressed air is supplied to the valve body, the valve body is separated from the discharge port by a minute distance, and a small amount of pure water in the processing tank is discharged for a predetermined time. Control means for supplying compressed air to press the valve body against the outlet ;
A substrate processing apparatus comprising:
請求項1に記載の基板処理装置において、
前記制御手段は、前記駆動手段を所定時間だけ操作することを特徴とする基板処理装置。
The substrate processing apparatus according to claim 1,
The substrate processing apparatus, wherein the control means operates the driving means for a predetermined time.
請求項1または2に記載の基板処理装置において、
前記制御手段は、前記排出口から排出される処理液の流量が、前記処理液供給手段から前記処理槽へ供給される純水供給量よりも少ない量となるように、前記駆動手段を操作することを特徴とする基板処理装置。
The substrate processing apparatus according to claim 1 or 2,
The control means operates the driving means so that a flow rate of the processing liquid discharged from the discharge port is smaller than a pure water supply amount supplied from the processing liquid supply means to the processing tank. A substrate processing apparatus.
請求項1または2に記載の基板処理装置において、
前記制御手段は、前記駆動手段を、閉止用の全閉操作と、排出用の全開操作と、スローリーク用の微小開操作との三段階で操作することを特徴とする基板処理装置。
The substrate processing apparatus according to claim 1 or 2,
The substrate processing apparatus characterized in that the control means operates the driving means in three stages: a full closing operation for closing, a full opening operation for discharging, and a micro opening operation for slow leak.
処理液に基板を浸漬させて基板に対して処理を行う基板処理方法において、
処理槽の排出口を急速排水弁の弁体で閉止した状態で、処理槽に貯留されている薬液を含む処理液に基板を浸漬させて基板に対して処理を行う過程と、
急速排水弁の弁体を排出口から離間させて前記処理槽内の処理液を排出口から排出するとともに、処理槽の排出口を急速排水弁の弁体で閉止した状態で、純水を処理液として前記処理槽に供給する過程と、
純水を含む処理液で基板に対してリンス処理を行う過程と、
前記リンス処理の間、急速排水弁の弁体を排出口から微小距離だけ離間させて、純水を少量だけ所定時間排出させた後に急速排水弁の弁体を排出口に押圧させる過程と、
リンス処理を終えるとともに、急速排水弁の弁体を排出口から大きく離間させて全処理液を排出させる過程と、
を備えていることを特徴とする基板処理方法。
In a substrate processing method for processing a substrate by immersing the substrate in a processing solution,
In the state where the discharge port of the treatment tank is closed by the valve body of the quick drain valve, the process is performed on the substrate by immersing the substrate in the treatment liquid containing the chemical solution stored in the treatment tank;
The quick drain valve is separated from the discharge port to discharge the processing liquid in the treatment tank from the discharge port, and the pure water is treated with the discharge port of the treatment tank closed by the quick drain valve valve. Supplying the liquid to the treatment tank as a liquid;
A process of rinsing the substrate with a processing solution containing pure water;
During the rinsing process, the valve body of the quick drain valve is separated from the discharge port by a minute distance, and the pure water is discharged by a small amount for a predetermined time and then the valve body of the quick drain valve is pressed against the discharge port;
The process of rinsing and discharging the entire processing liquid by separating the quick drain valve body from the discharge port,
A substrate processing method characterized by comprising:
請求項5に記載の基板処理方法において、
前記純水を少量だけ排出させる過程は、所定時間だけ行われることを特徴とする基板処理方法。
The substrate processing method according to claim 5,
The substrate processing method according to claim 1, wherein the process of discharging a small amount of pure water is performed for a predetermined time.
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