JP5227552B2 - 薄膜トランジスタ及びその作製方法、並びに半導体装置 - Google Patents

薄膜トランジスタ及びその作製方法、並びに半導体装置 Download PDF

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Publication number
JP5227552B2
JP5227552B2 JP2007223601A JP2007223601A JP5227552B2 JP 5227552 B2 JP5227552 B2 JP 5227552B2 JP 2007223601 A JP2007223601 A JP 2007223601A JP 2007223601 A JP2007223601 A JP 2007223601A JP 5227552 B2 JP5227552 B2 JP 5227552B2
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layer
semiconductor film
laser
light
laser light
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JP2007223601A
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JP2008085316A5 (enExample
JP2008085316A (ja
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秀和 宮入
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2007223601A 2006-08-31 2007-08-30 薄膜トランジスタ及びその作製方法、並びに半導体装置 Expired - Fee Related JP5227552B2 (ja)

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JP2007223601A JP5227552B2 (ja) 2006-08-31 2007-08-30 薄膜トランジスタ及びその作製方法、並びに半導体装置

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JP2006236105 2006-08-31
JP2006236105 2006-08-31
JP2007223601A JP5227552B2 (ja) 2006-08-31 2007-08-30 薄膜トランジスタ及びその作製方法、並びに半導体装置

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JP2008085316A JP2008085316A (ja) 2008-04-10
JP2008085316A5 JP2008085316A5 (enExample) 2010-09-16
JP5227552B2 true JP5227552B2 (ja) 2013-07-03

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Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110157113A1 (en) * 2008-10-02 2011-06-30 Tadayoshi Miyamoto Display panel and display device using the same
JP5691285B2 (ja) * 2010-08-05 2015-04-01 三菱電機株式会社 表示装置の製造方法
JP2011082545A (ja) * 2010-11-24 2011-04-21 Sony Corp 熱処理装置、熱処理方法、半導体装置の製造方法および表示装置の製造方法
KR102361966B1 (ko) 2013-12-02 2022-02-14 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 그 제조방법
KR102439093B1 (ko) * 2014-07-03 2022-08-31 아이피지 포토닉스 코포레이션 광섬유 레이저에 의해 비정질 규소 기재를 균일하게 재결정화하기 위한 방법 및 시스템

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4403599B2 (ja) * 1999-04-19 2010-01-27 ソニー株式会社 半導体薄膜の結晶化方法、レーザ照射装置、薄膜トランジスタの製造方法及び表示装置の製造方法
JP4353352B2 (ja) * 2001-05-15 2009-10-28 シャープ株式会社 半導体装置及びその製造方法
JP2004119919A (ja) * 2002-09-30 2004-04-15 Hitachi Ltd 半導体薄膜および半導体薄膜の製造方法
JP2004363241A (ja) * 2003-06-03 2004-12-24 Advanced Lcd Technologies Development Center Co Ltd 結晶化半導体層の形成方法及び形成装置ならびに半導体装置の製造方法

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