JP5218886B2 - Double-side polishing equipment - Google Patents

Description

  The present invention relates to a polishing apparatus that relatively moves a substrate and a polishing member to contact each other and performs polishing while supplying an abrasive to the contact portion.

  A typical example of such a polishing apparatus is a polishing apparatus called a CMP apparatus. A CMP apparatus is widely used for polishing a substrate such as a glass substrate, a silicon substrate, or a semiconductor wafer as a technique for polishing a substrate surface with high precision by chemical mechanical polishing (CMP). Conventionally, a substrate held by a substrate holder and a polishing head on which a polishing pad is mounted are provided in an opposed posture in an eccentric state. A slurry (Slurry) according to the object to be processed (silicon substrate, interlayer insulating film or metal film on the wafer substrate, etc.) is supplied to the contact part, and the chemical / mechanical by the slurry between the polishing pad and the substrate surface 2. Description of the Related Art Polishing apparatuses that cause a polishing action to polish a substrate surface flatly are known.

  In addition to the rotary polishing apparatus as described above, the substrate held by the substrate holder and the polishing member (polishing pad or lapping platen) are provided in an opposing posture, and the substrate surface and the polishing member are polished. A non-rotating type that polishes the substrate surface flatly by supplying the slurry (abrasive) to the contact portion with the surface while bringing the substrate and the polishing member into linear contact with each other in the direction along the substrate surface. A polishing apparatus is known. Known documents disclosing such a non-rotating type polishing apparatus include those described in Patent Document 1 and Patent Document 2.

JP 2000-218514 A JP 2002-168316 A

  By the way, as an important performance required for such a polishing apparatus, there is uniformity of a polishing rate (polishing amount per unit time) in a polishing region. In order to improve the uniformity of the polishing rate, it is assumed that the polishing pressure at each point in the polishing region is uniform according to Preston's law. ) Needs to have a uniform relative speed. In order to satisfy this, it is known that the rotational speed of the polishing pad and the substrate must be substantially the same in the rotary polishing apparatus. When this condition is satisfied, the relative velocity of the polishing pad at each point in the substrate surface (polishing region) becomes proportional to the difference between the radius of the polishing pad and the radius of the substrate, which generally increases the relative velocity. This means that it is necessary to use a polishing pad having a sufficiently large radius compared to the radius of the substrate. As a result, there has been a problem that the polishing apparatus itself becomes large. In addition, when a square substrate is polished, the conventional rotary polishing apparatus has a problem that surface collapse is likely to occur at the square corner portion.

  The present invention has been made in view of the above-described problems, and improves the uniformity of the polishing rate in the polishing region, that is, the flatness of the polishing profile (flatness of the substrate surface) and the miniaturization of the polishing apparatus itself. An object of the present invention is to provide a double-side polishing apparatus capable of achieving both of the above.

In order to achieve the above object, a double-side polishing apparatus according to the present invention is disposed so as to face and hold a substrate carrier member that surrounds and holds the periphery of a substrate, and the upper and lower surfaces of the substrate held by the substrate carrier member. upper and lower pair of upper polishing member and a lower abrasive member, causes a linear oscillating in opposite directions along the upper and lower surfaces of the upper abrasive member and said lower abrasive member said substrate, said upper and said substrate carrier member A swing mechanism for linearly swinging the polishing member and the lower polishing member in a direction substantially perpendicular to the linear swing direction of the polishing member and the lower polishing member, and the upper and lower surfaces of the substrate facing the upper polishing member and the lower polishing member, respectively. through the formed plurality of slurry supply holes, Ken the lower abutment between the substrate and the upper polishing member and the upper contact portion and the substrate contact face contact with the said lower polishing member is in contact with opposing those Agent through a polishing agent supply mechanism for supplying, said upper polishing member and a plurality of abrasive discharge holes top and bottom surfaces and formed so that each of opposing the substrate to the lower polishing member, said upper abutment And an abrasive discharge mechanism for discharging the abrasive intervening in the lower contact portion, and the supply of the abrasive is controlled through the abrasive supply hole by the abrasive supply mechanism and the abrasive The discharge mechanism controls discharge of the abrasive through the abrasive discharge hole by a discharge mechanism so that the amount of the abrasive in the upper contact portion and the lower contact portion can be locally adjusted. .

In the double-side polishing apparatus, the polishing agent supply mechanism and the polishing agent discharge mechanism perform supply and discharge control of the polishing agent according to the state of the upper and lower surfaces of the substrate to perform the upper contact portion and the lower side contact. It is preferable that the amount of the abrasive interposed at the contact portion is locally adjusted .

  In the double-side polishing apparatus, the substrate carrier member is formed with the same thickness as the substrate and at least the upper and lower surfaces with the same material as the upper and lower surfaces of the substrate, and the upper and lower surfaces of the substrate and the substrate carrier member are It is preferable to hold the substrate so that the lower surface substantially coincides with the lower surface.

In the double-side polishing apparatus, it is preferable that the substrate carrier member is configured to be adjustable in thickness according to the thickness of the substrate. Therefore, for example, the substrate carrier member is formed by stacking a plurality of thin plate frame members having fitting holes for fitting and holding the substrate, and the number of the thin plate frame members is increased or decreased according to the thickness of the substrate. It is preferable that the thickness of the substrate carrier member can be adjusted.

  In the double-side polishing apparatus, the upper polishing member, the lower polishing member, and the dressing tool on which a dresser is attached are linearly swung in directions substantially orthogonal to each other, so that the upper polishing member, the lower polishing member, and the It is preferable to provide a dressing mechanism that contacts a dresser and dresses the surfaces of the upper polishing member and the lower polishing member.

  According to the double-side polishing apparatus of the present invention, the upper polishing member and the lower polishing member are moved by the swing mechanism while the abrasive is interposed between the upper contact portion and the lower contact portion by the abrasive supply mechanism. The substrate carrier member is linearly oscillated in directions opposite to each other, and the substrate carrier member is linearly oscillated in a direction substantially orthogonal to the linear oscillation direction of the upper polishing member and the lower polishing member, so that the upper and lower surfaces of the substrate held by the substrate carrier member are Polishing. For this reason, the relative speeds of the upper polishing member and the lower polishing member on the upper and lower surfaces of the substrate can be made uniform, whereby the uniformity of the polishing rate, that is, the flatness of the polishing profile can be improved. Further, the apparatus itself can be reduced in size as compared with a rotary polishing apparatus that uses a polishing member having a radius sufficiently larger than the radius of the substrate in order to increase the relative speed between the substrate and the polishing member.

  Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings. A schematic configuration of a double-side polishing apparatus to which the present invention is applied is shown in FIGS. The double-side polishing apparatus 1 includes a substrate holding mechanism 2 that holds a substrate 10 that is a member to be polished, a substrate polishing mechanism 3 that polishes the surface (upper and lower surfaces) of the substrate 10, and the states of the upper and lower surfaces of the substrate 10. The polishing agent supply / discharge unit 4 for adjusting the amount of the polishing agent, the dressing mechanism 5 for dressing the polishing surfaces of the upper wrap surface plate 31a and the lower wrap surface plate 31b, the substrate holding mechanism 2, the substrate polishing mechanism 3, and the polishing And a control unit 6 that controls the operation of the entire apparatus including the agent supply / discharge unit 4 and the dressing mechanism 5. For convenience of explanation, the directions of the arrows written in FIG. 1 and FIG. 2 as well as the front and the left are assumed to be upward, forward, and left in the following description.

  The substrate holding mechanism 2 includes a substrate carrier 21 that surrounds and holds the periphery of a substrate 10 such as a square glass substrate, and a carrier swing mechanism 25 that linearly swings the substrate carrier 21 in the front-rear direction. The peripheral side surface of the substrate 10 is brought into contact with and held by the carrier swing mechanism 25, and the substrate 10 and the substrate carrier 21 are linearly swung in the front-rear direction (Y-axis direction) (hereinafter referred to as Y-axis linear swing). Is done.

  As shown in FIG. 3, the substrate carrier 21 has a fitting hole 22 that fits and holds the substrate 10 at the center, and is a flat plate that is somewhat larger than the front and rear left and right widths of the upper and lower surfaces that are the polished surfaces of the substrate 10 It is formed in a frame shape. The substrate carrier 21 is formed by stacking a plurality of thin plate frame members 21 a to 21 c having a fitting hole 22 in the center portion in the vertical direction (in a seam shape), and is fitted and held in the fitting hole 22. The thickness can be adjusted by increasing / decreasing the thin frame member in accordance with the thickness of 10. The uppermost and lowermost layers of the substrate carrier 21, that is, the thin plate frame members 21a and 21c, are formed of the same material as the substrate 10 and are formed somewhat thicker than the estimated polishing amount (the removal amount in the vertical direction) during polishing. The The plurality of thin plate frame members 21b,... Sandwiched between the outermost thin plate frame members 21a, 21c is not particularly limited, and the number of thin frame members 21b,. Increase or decrease the value. Note that the substrate carrier 21 may be configured to have an internal structure such as a spring or air pressurization so that the thickness can be adjusted.

  The substrate 10 held by the substrate carrier 21 has the same height position between the upper and lower surfaces of the substrate carrier 21 (the upper surface of the thin plate frame member 21a and the lower surface of the thin plate frame member 21c) and the upper and lower surfaces of the substrate 10 to be polished. In this state, it is fitted and held in the fitting hole 22.

  The carrier swing mechanism 25 includes a pair of left and right guide rails 26 that extend in parallel in the front-rear direction and are fixed to the upper surfaces of left and right bases 29 that are disposed with a lower polishing stage 35b to be described later interposed therebetween, and left and right guide rails. 26, a carrier support member 27 that is fitted to each other and is movable back and forth, and a Y-axis drive mechanism 28 that moves the carrier support member 27 in the front-rear direction (Y-axis direction). As the guide rail 26, a support rail of a linear motion bearing also referred to as a linear motion guide or a linear guide is used, and a left end portion and a right end portion of the substrate carrier 21 are fitted to carrier support members 27 respectively fitted to the left and right guide rails 26. As a result, the substrate carrier 21 is supported so as to be movable in the front-rear direction (Y-axis direction) while straddling the upper surface of the lower polishing stage 35b (lower lap surface plate 31b).

  Since various known drive mechanisms can be used for the Y-axis drive mechanism 28, detailed illustration is omitted in this specification. For example, the Y-axis drive mechanism 28 extends in the front and rear in the base 29 in parallel with the guide rail 26. It can be configured by a ball screw provided, a servo motor that rotationally drives the ball screw, and a ball nut fitted and held by the ball screw and fixed to the carrier support member 27. The operation of the Y-axis drive mechanism 28 is controlled by the control unit 6 and causes the substrate 10 to linearly swing along the Y-axis together with the substrate carrier 21 fixed to the carrier support member 27.

  The substrate polishing mechanism 3 includes a pair of upper and lower polishing mechanisms sandwiching the substrate 10, and is supported by an upper polishing stage 35a and a lower polishing stage 35b that respectively support upper and lower lap surface plates 31a and 31b, and upper and lower polishing stages 35a and 35b. The upper and lower lap surface swing mechanisms 36a and 36b for vertically swinging the upper and lower lap surface plates 31a and 31b in the left-right direction (X-axis direction) (hereinafter referred to as X-axis linear swing), and upper and lower polishing An upper stage moving mechanism 30a and a lower stage moving mechanism 30b that move the stages 35a and 35b up and down and horizontally move the upper and lower lap surface plates 31a and 31b to the upper and lower surfaces of the substrate 10 or a position facing a dress mechanism 5 described later. The upper and lower lap surface plates 31a and 31b are respectively linearly swung by the upper and lower surface plate rocking mechanisms 36a and 36b. In this state, the upper and lower lap surface plates 31a and 31b are brought into contact with the upper and lower surfaces of the substrate 10 by the upper and lower stage moving mechanisms 30a and 30b, and each of the substrate 10 and the upper and lower lap surface plates 31a and 31b is made by the abrasive supply / discharge unit 4. The upper and lower surfaces of the substrate 10 are flatly polished by being pressed against the contact portion with an abrasive interposed therebetween.

  The upper and lower lap surface plates 31a and 31b have a highly flat polished surface on the surface facing the base 10, and the polished surface has a surface plate groove 32a at substantially equal intervals in the front-rear direction as shown in FIG. 32b are formed so as to promote the diffusion of the abrasive supplied from the abrasive supply / discharge unit 4 during the polishing process. In addition, abrasive supply holes 33a and 33b and abrasive discharge holes 34a and 34b that penetrate vertically and face the upper and lower surfaces of the substrate 10 are provided in the upper and lower lap surface plates 31a and 31b. Are formed side by side alternately. Supply lines 42 and 42 to be described later are connected to the abrasive supply holes 33a and 33b, respectively. Further, discharge lines 46 and 46 described later are connected to the abrasive discharge holes 34a and 34b, respectively. The polishing surfaces of the upper and lower lap surface plates 31a and 31b are set to dimensions that are approximately 20% larger than the upper and lower surfaces that are the surfaces to be polished of the substrate 10.

  The upper and lower surface plate swinging mechanisms 36a, 36b extend in parallel in the left-right direction on the upper surfaces of a pair of front and rear upper X-axis rails 37a and lower polishing stage 35b that are fixed to the lower surface of the upper polishing stage 35a in parallel in the left-right direction. And a pair of front and rear lower X-axis rails 37b, upper and lower X-axis rails 37a and 37b, which are respectively fitted to the upper and lower X-axis rails 37b and 37b, and movable to the left and right, and upper and lower surface plate support members 38a and 38b. Upper and lower X-axis drive mechanisms 39a and 39b are respectively configured to move in the left-right direction (X-axis direction). As the upper and lower X-axis rails 37a and 37b, linear motion support rails, which are also referred to as linear guides or linear guides, are used, and upper and lower surface plate support members 38a and 38b fitted to the upper and lower X-axis rails 37a and 37b, respectively. The upper and lower wrap surface plates 31a and 31b are respectively fixed to the upper and lower lap surface plates 31a and 31b.

  As the vertical X-axis drive mechanisms 39a and 39b, various known drive mechanisms can be used, and detailed illustration thereof is omitted in this specification. However, as with the Y-axis drive mechanism 28, for example, the vertical polishing stage 35a, A ball screw extending in the left-right direction in parallel with the upper and lower X-axis rails 37a and 37b and a servo motor for rotationally driving the ball screw, and fitted and held by the ball screw and fixed to the upper and lower surface plate support members 38a and 38b. It can be constituted by a ball nut. The operations of the upper and lower X-axis drive mechanisms 39a and 39b are controlled by the control unit 6 and cause the upper and lower lap surface plates 31a and 31b fixed to the upper and lower surface plate support members 38a and 38b to linearly swing in the X-axis direction.

  The upper and lower stage moving mechanisms 30a and 30b are provided with a pressurizing mechanism such as an airbag type, and the upper and lower lap surface plates 31a and 31b are in contact with the upper and lower surfaces of the substrate 10, respectively, or will be described later. The polishing pressure or the dress pressure can be controlled by controlling the pressure in the pressurizing chamber in a state where the dressers 51a and 51b are in contact with each other.

  The abrasive supply / discharge unit 4 stores various polishing agents for polishing the substrate according to the processing target, supplies the polishing agent to the substrate polishing mechanism 3, and polishes the substrate from the polishing supply mechanism 41. Polishing that discharges the polishing agent interposed between the supply lines 42 and 42 that guide the polishing agent discharged to the mechanism 3 to the upper and lower lap surface plates 31a and 31b, and the contact portions between the substrate 10 and the upper and lower lap surface plates 31a and 31b. And a discharge line 46, 46 for guiding the abrasive discharged from the substrate polishing mechanism 3 (upper and lower lapping surface plates 31a, 31b) to the abrasive discharge mechanism 45. The abrasive supply mechanism 41 and the abrasive The discharge mechanism 45 is configured to adjust the amount of abrasive interposed at each contact portion between the substrate 10 and the upper and lower lap surface plates 31a and 31b.

  The abrasive supply mechanism 41 includes a storage unit that stores various polishing agents for substrate polishing according to a processing target, a pump that pumps the abrasive guided from the storage unit, and a supply flow of the abrasive discharged from the pump. A flow path switching valve for switching the path, a supply control valve for controlling the supply amount of the abrasive, and the like are disposed, and the operation thereof is controlled by the control unit 6. The supply lines 42 and 42 are guided to the upper and lower lap surface plates 31a and 31b through the upper and lower stage moving mechanisms 30a and 30b, and a plurality of polishings formed so as to penetrate the upper and lower lap surface plates 31a and 31b vertically. It is connected to the agent supply holes 33a and 33b.

  The abrasive discharging mechanism 45 is a suction pump that sucks the abrasive interposed between the contact portions of the substrate 10 and the upper and lower lap surface plates 31a and 31b, and a flow path that switches a discharge flow path of the abrasive sucked by the suction pump. A switching valve, a discharge control valve for controlling the discharge and suction amount of the abrasive, and the like are disposed, and the operation thereof is controlled by the control unit 6. The discharge lines 46 and 46 extend from a plurality of abrasive discharge holes 34a and 34b formed through the upper and lower lap surface plates 31a and 31b, and pass through the upper and lower stage moving mechanisms 30a and 30b. It is connected to the discharge mechanism 45.

  As shown in FIG. 5, the dressing mechanism 5 includes an upper dressing mechanism 50a and a lower dressing mechanism 50b facing the upper and lower lap surface plates 31a and 31b moved by the upper and lower stage moving mechanisms 30a and 30b, respectively. The upper and lower dress mechanisms 50a and 50b are supported by upper and lower dressers 51a and 51b made of a grinding wheel for surface plate grinding, upper and lower dresser stages 52a and 52b that support the upper and lower dressers 51a and 51b, and upper and lower dresser stages 52a and 52b. The upper and lower dressers 51a and 51b are provided with upper and lower dresser swing mechanisms 55a and 55b for linearly swinging the Y-axis. 31b, and the polishing surfaces of the upper and lower lap surface plates 31a and 31b are dressed flatly. Note that the dressing mechanism 5 may include a moving mechanism that moves the dresser stage so as to face the upper and lower lap surface plates 31a and 31b moved by the upper and lower stage moving mechanisms 30a and 30b. Good.

  The upper and lower dresser swing mechanisms 55a and 55b, like the carrier swing mechanism 25 and the upper and lower platen swing mechanisms 36a and 36b described above, are a pair of left and right dressers extending in parallel in the front-rear direction and fixed to the upper and lower dresser stages 52a and 52b. Y-axis rail, a dresser support member that is respectively fitted to the Y-axis rail and is movable back and forth, and a Y-axis drive mechanism that moves the dresser support member in the front-rear direction (Y-axis direction). Is done. The operation of the upper and lower dresser swing mechanisms 55a and 55b is controlled by the control unit 6 to swing the upper and lower dressers 51a and 51b linearly on the Y axis.

  The controller unit 6 controls the shaft drive mechanisms provided in the carrier swing mechanism 25, the upper and lower surface plate swing mechanisms 36a and 36b, and the upper and lower dresser swing mechanisms 55a and 55b, respectively, and the substrate 10 and the upper and lower lap surface plates 31a. , 31b and the upper and lower dressers 51a, 51b, respectively, are controlled. These rocking conditions can be arbitrarily set. By setting the rocking conditions of the substrate 10 and the upper and lower lap surface plates 31a and 31b to predetermined values, respective polishing trajectories as shown in FIG. 6 can be drawn. Is possible. The upper and lower lapping surface plates 31a and 31b in the present embodiment are not particularly limited in the number of swings when the substrate 10 is polished, but about 10% of the substrate 10 in the opposite direction with the center of the swing width being symmetrical. The X axis is linearly swung by the swing width.

  The controller unit 6 controls flow path switching valves, control valves, and the like provided in the abrasive supply mechanism 41 and the abrasive discharge mechanism 45, and faces the upper and lower surfaces of the substrate 10 to the upper and lower lap surface plates 31a and 31b. A control is performed to vary the supply amount and discharge suction amount of the abrasive supplied or discharged from the plurality of abrasive supply holes 33a and 33b and abrasive discharge holes 34a and 34b for each area on the upper and lower surfaces of the substrate 10. . For example, the upper and lower surfaces of the substrate 10 are measured in advance, and the upper and lower surfaces of the substrate 10 are in a state where the upper and lower surfaces of the substrate 10 are polished by supplying a large amount of abrasive to the convex areas on the upper and lower surfaces. Accordingly, the amount of the abrasive is locally adjusted.

  Further, the control unit 6 uses the abrasive supply / discharge unit 4 and the substrate 10 and the upper / lower lap surface plate 31a based on a control program preset and stored in the double-side polishing apparatus 1 and a processing program read according to the processing target. , 31b, and a substrate held by the substrate carrier 21 by controlling the operation of each mechanism provided in the substrate holding mechanism 2, the substrate polishing mechanism 3, and the dressing mechanism 5 with an abrasive interposed therebetween. 10 Y-axis linear oscillation, X-axis linear oscillation of the upper and lower lap surface plates 31a and 31b, and Y-axis linear oscillation of the upper and lower dressers 51a and 51b, respectively, thereby polishing the upper and lower surfaces of the substrate 10. The dressing of the polished surfaces of the upper and lower wrap surface plates 31a and 31b is performed.

  In the case of polishing the substrate 10 in the double-side polishing apparatus 1 configured as described above, first, the fitting holes of the substrate carrier 21 in a state where the height positions of the substrate carrier 21 and the upper and lower surfaces of the substrate 10 are matched. The board 10 is fitted and held in the board 22. Then, the upper and lower polishing stages 35a and 35b are moved up and down and horizontally moved by the upper and lower stage moving mechanisms 30a and 30b so that the upper and lower lap surface plates 31a and 31b are respectively opposed to the upper and lower surfaces of the substrate 10 to thereby move the carrier swing mechanism 25. The substrate 10 is swung linearly in the Y axis, and the upper and lower wrap surface swing mechanisms 36a and 36b are moved in the opposite directions to the upper and lower lap surface plates 31a and 31b while the substrate 10 is swung in the X axis linearly (the upper and lower lap surface plates 31a and 31b The upper and lower lap surface plates 31a and 31b are pressed against the upper and lower surfaces of the substrate 10 with a predetermined polishing pressure by the pressurizing mechanism provided in the upper and lower stage moving mechanisms 30a and 30b, respectively. (The substrate 10 is sandwiched between the upper and lower wrap surface plates 31a and 31b in the vertical direction).

  At this time, the abrasive supply mechanism 41 and the abrasive discharge mechanism 45 are used for processing through the plurality of abrasive supply holes 33a and 33b and the abrasive discharge holes 34a and 34b formed in the upper and lower lap surface plates 31a and 31b. Corresponding abrasive is supplied to each contact portion between the substrate 10 and the upper and lower wrap surface plates 31a and 31b while adjusting the amount of abrasive intervening for each area according to the state of the upper and lower surfaces (uneven portions) of the substrate 10. Then, the upper and lower surfaces of the substrate 10 are polished.

  When dressing the upper and lower lap surface plates 31a and 31b in the double-side polishing apparatus 1, first, the upper and lower polishing stage 35a and 35b are moved up and down and horizontally moved by the upper and lower stage moving mechanisms 30a and 30b. 31a and 31b are positioned opposite to the upper and lower dress mechanisms 50a and 50b, respectively, and the upper and lower dressers oscillating mechanisms 55a and 55b cause the upper and lower dressers 51a and 51b to linearly oscillate in the Y-axis and the upper and lower surface plate oscillating mechanisms 36a and 36b. While the upper and lower lap surface plates 31a and 31b are swung linearly on the X axis, the upper and lower lap surface plates 31a and 31b are moved to the upper and lower dressers 51a and 51b with a predetermined dress pressure by the pressurizing mechanism provided in the upper and lower stage moving mechanisms 30a and 30b. Each of the upper and lower lapping surface plates 31a and 31b is pressed and Carry out the ring.

  As described above, in the double-side polishing apparatus 1, the substrate 10 is linearly swung by the carrier swing mechanism 25 and the upper and lower lap surface plates 31 a and 31 b are moved in the opposite directions by the upper and lower surface plate swing mechanisms 36 a and 36 b. While swinging linearly, the upper and lower lap surface plates 31a and 31b are pressed against the upper and lower surfaces of the substrate 10 with a predetermined polishing pressure by the pressurizing mechanisms provided in the upper and lower stage moving mechanisms 30a and 30b, respectively. Polishing is performed. For this reason, the relative speeds of the upper and lower lap surface plates 31a and 31b on the upper and lower surfaces of the substrate 10 can be made uniform, whereby the uniformity of the polishing rate, that is, the flatness of the polishing profile can be improved. Further, the apparatus itself can be reduced in size as compared with a rotary polishing apparatus that uses a polishing member having a radius sufficiently larger than the radius of the substrate in order to increase the relative speed between the substrate and the polishing member.

  Furthermore, since the substrate carrier 21 fits and holds the substrate 10 in the fitting hole 22 of the substrate carrier 21 in the state where the height positions of the substrate carrier 21 and the upper and lower surfaces of the substrate 10 are matched during the polishing process, Surface collapse of the square corner portion of the substrate 10 can be prevented. In addition, since the upper and lower lap surface plates 31a and 31b are linearly swung in the opposite directions to the X axis by the upper and lower surface plate rocking mechanisms 36a and 36b, the upper and lower lap surface plates 31a and 31b generate vibrations of the substrate 10 generated during polishing. It can be reduced by canceling each other.

  Further, in the double-side polishing apparatus 1, the abrasive supply mechanism 41 and the abrasive discharge mechanism 45 pass through a plurality of abrasive supply holes 33 a and 33 b and abrasive discharge holes 34 a and 34 b formed in the upper and lower lap surface plates 31 a and 31 b. Then, the amount of the polishing agent corresponding to the processing target is set in each contact portion between the substrate 10 and the upper and lower lap surface plates 31a and 31b according to the state (uneven portions) of the upper and lower surfaces of the substrate 10 for each area. By supplying while adjusting, the upper and lower surfaces of the substrate 10 are polished. For this reason, at the time of polishing, the amount of abrasives in the abutting portion between the substrate 10 and the upper and lower lap surface plates 31a and 31b is equalized, or a large amount of abrasive is applied to the convex areas on the upper and lower surfaces of the substrate 10. Corrective polishing can be locally performed on the upper and lower surfaces of the substrate 10 such as supplying and promoting polishing.

  Further, in the double-side polishing apparatus 1, the upper and lower dressers 51a and 51b are linearly oscillated in the Y axis by the upper and lower dresser oscillating mechanisms 55a and 55b, and the upper and lower lap surface plates 31a and 31b are X axis by the upper and lower surface oscillating mechanisms 36a and 36b. While swinging linearly, the upper and lower lap surface plates 31a and 31b are pressed against the upper and lower dressers 51a and 51b with a predetermined dress pressure by the pressurizing mechanism provided in the upper and lower stage moving mechanisms 30a and 30b, respectively. Dressing of the polished surface 31b is performed. For this reason, the upper and lower lapping surface plates 31a and 31b can maintain high flatness by precisely modifying the polished surface.

  In the embodiment described above, as an example of the polishing member, a double-side polishing apparatus in which polishing is performed with the polishing surfaces of the upper and lower lap surface plates opposed to the upper and lower surfaces of the substrate is illustrated. The same effect can be applied to a double-side polishing apparatus in which a polishing process is performed by bringing a polishing pad formed of another polishing member, for example, foaming polyurethane, into contact with the upper and lower surfaces of the substrate. be able to.

It is explanatory drawing which shows schematic structure of the double-side polish apparatus to which this invention is applied. It is a top view which shows schematic structure of the said double-side polish apparatus. It is explanatory drawing which shows the structure of the substrate carrier in the substrate holding mechanism which comprises the said double-side polish apparatus. It is explanatory drawing which shows the structure of the abrasive | polishing agent supply hole and abrasive | polishing agent discharge hole which were formed in the upper and lower lap surface plate. It is explanatory drawing which shows the structure of the dressing mechanism in the said double-side polish apparatus. It is explanatory drawing which illustrates each grinding | polishing locus | trajectory in the said double-side polish apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Double-side polish apparatus 2 Substrate holding mechanism 3 Substrate polishing mechanism 4 Abrasive supply / discharge unit 5 Dress mechanism 10 Substrate 21 Substrate carrier 25 Carrier swing mechanism 31a Upper lapping surface plate (upper polishing member)
31b Lower lap surface plate (lower polishing member)
33a, 33b Abrasive supply hole (Abrasive passage)
34a, 34b Abrasive discharge hole (Abrasive passage)
36a, 36b Vertical platen swing mechanism 41 Abrasive supply mechanism 45 Abrasive discharge mechanism 51a, 51b Vertical dresser (dresser)
52a, 52b Top and bottom dresser stages (dressing tools)

Claims (6)

A substrate carrier member that surrounds and holds the periphery of the substrate;
And a pair of upper and lower upper polishing member and a lower abrasive member opposed to being disposed on the upper and lower surfaces of the substrate held by the substrate carrier member,
The upper polishing member and the lower polishing member are linearly swung in directions opposite to each other along the upper and lower surfaces of the substrate, and the substrate carrier member is moved in a straight rocking direction of the upper polishing member and the lower polishing member. A swinging mechanism that swings linearly in a substantially orthogonal direction ;
The upper contact where the substrate and the upper polishing member abut against each other through a plurality of abrasive supply holes formed on the upper polishing member and the lower polishing member so as to face the upper and lower surfaces of the substrate, respectively. A polishing agent supply mechanism for supplying a polishing agent to a lower contact portion where the portion and the substrate and the lower polishing member are in contact with each other , and
The upper polishing member and the lower polishing member are interposed in the upper contact portion and the lower contact portion through a plurality of abrasive discharge holes formed to face the upper and lower surfaces of the substrate, respectively. An abrasive discharge mechanism for discharging the abrasive ;
The abrasive supply mechanism controls the supply of the abrasive through the abrasive supply hole, and the abrasive discharge mechanism controls the discharge of the abrasive through the abrasive discharge hole, so that the upper contact A double-side polishing apparatus characterized in that the amount of the abrasive contained in the contact portion and the lower contact portion can be locally adjusted . The abrasive supply mechanism and the abrasive discharge mechanism perform supply and discharge control of the abrasive according to the state of the upper and lower surfaces of the substrate, and the abrasive in the upper contact portion and the lower contact portion The double-side polishing apparatus according to claim 1, wherein the amount of intervening is adjusted locally . The double-side polishing apparatus according to claim 1 , wherein the substrate carrier member is configured to be adjustable in thickness according to the thickness of the substrate. The substrate carrier member is configured by stacking a plurality of thin plate frame members having fitting holes for fitting and holding the substrate, and the substrate according to the thickness of the substrate by increasing or decreasing the number of the thin plate frame members. The double-side polishing apparatus according to claim 3, wherein the thickness of the carrier member can be adjusted. The substrate carrier member has the same thickness as the substrate and at least upper and lower surfaces made of the same material as the upper and lower surfaces of the substrate, and the upper and lower surfaces of the substrate substantially coincide with the upper and lower surfaces of the substrate carrier member. The double-side polishing apparatus according to claim 1 , wherein the substrate is held as described above. The upper polishing member, the lower polishing member, and the dressing tool on which the dresser is attached are linearly swung in directions substantially orthogonal to each other so that the upper polishing member, the lower polishing member, and the dresser are brought into contact with each other. The double-side polishing apparatus according to claim 1 , further comprising a dressing mechanism for dressing surfaces of the upper polishing member and the lower polishing member.

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