JP5211550B2 - シリコン単結晶ウェーハの製造方法 - Google Patents

シリコン単結晶ウェーハの製造方法 Download PDF

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JP5211550B2
JP5211550B2 JP2007138652A JP2007138652A JP5211550B2 JP 5211550 B2 JP5211550 B2 JP 5211550B2 JP 2007138652 A JP2007138652 A JP 2007138652A JP 2007138652 A JP2007138652 A JP 2007138652A JP 5211550 B2 JP5211550 B2 JP 5211550B2
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wafer
heat treatment
layer
silicon
single crystal
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JP2008294256A (ja
JP2008294256A5 (enExample
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尚志 足立
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Sumco Corp
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Sumco Corp
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JP2007138652A 2007-05-25 2007-05-25 シリコン単結晶ウェーハの製造方法 Active JP5211550B2 (ja)

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JP2007138652A JP5211550B2 (ja) 2007-05-25 2007-05-25 シリコン単結晶ウェーハの製造方法

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JP2007138652A JP5211550B2 (ja) 2007-05-25 2007-05-25 シリコン単結晶ウェーハの製造方法

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JP2008294256A JP2008294256A (ja) 2008-12-04
JP2008294256A5 JP2008294256A5 (enExample) 2011-01-13
JP5211550B2 true JP5211550B2 (ja) 2013-06-12

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Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102011083041B4 (de) * 2010-10-20 2018-06-07 Siltronic Ag Stützring zum Abstützen einer Halbleiterscheibe aus einkristallinem Silizium während einer Wärmebehandlung und Verfahren zur Wärmebehandlung einer solchen Halbleiterscheibe unter Verwendung eines solchen Stützrings
JP6044660B2 (ja) * 2015-02-19 2016-12-14 信越半導体株式会社 シリコンウェーハの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5974638A (ja) * 1982-10-22 1984-04-27 Hitachi Ltd 半導体ウエ−ハの製法
JPS63166237A (ja) * 1986-12-27 1988-07-09 Fujitsu Ltd 半導体基板の処理方法
JP2003257981A (ja) * 2002-02-27 2003-09-12 Toshiba Ceramics Co Ltd シリコンウェーハの製造方法
JP4432317B2 (ja) * 2002-12-11 2010-03-17 信越半導体株式会社 シリコンウエーハの熱処理方法
JP4854936B2 (ja) * 2004-06-15 2012-01-18 信越半導体株式会社 シリコンウエーハの製造方法及びシリコンウエーハ

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