JP5203582B2 - Optical element - Google Patents

Description

  The present invention relates to an optical element provided with an infrared antireflection film, and particularly to an improvement in the antireflection effect thereof.

  Optical elements such as optical filters and optical windows are indispensable for optical measuring instruments, but the reflection of light on their surfaces results in a loss of light quantity. Therefore, an optical film having a thickness approximately equal to the wavelength of light is formed on the surface of the optical element, and surface reflection is suppressed by utilizing the light interference effect.

When an optical film is formed of a material having a refractive index smaller than the refractive index of the material used as the substrate, it is most reflective to light having a wavelength four times the optical film thickness (refractive index × physical film thickness) of the film. Although the film has a high prevention effect, the effect decreases with distance from the wavelength. The degree of antireflection is determined by the relationship of the refractive index. If the refractive index of the incident medium is n ₀ , the refractive index of the antireflection film is n ₁ , and the refractive index of the substrate is n ₂ , n ₁ = (n ₀ When n ₂ ) ^1/2 holds, the surface reflection can be zero. Therefore, a film material that satisfies these conditions is generally used.

  In the single-layer antireflection film, as shown in FIG. 1, the antireflection effect decreases rapidly as the distance from the wavelength is four times the optical film thickness. Therefore, a single-layer antireflection film is sufficient when it is desired to prevent reflection in a specific narrow wavelength range. However, when the effect is desired in a wider wavelength range, it is necessary to increase the number of antireflection films. For example, when the antireflection film is formed of two layers, as shown in FIG. 1, the antireflection effect is better in a wider wavelength range than the single-layer antireflection film.

Thus, in order to obtain a good antireflection effect in a wide wavelength range, it is necessary to form an antireflection film with a plurality of layers. In particular, since the antireflection film used in the infrared region is required to have an antireflection effect in a wide wavelength region as compared with that in the visible region, it is generally configured with a multilayer (for example, Patent Document 1).
Japanese Utility Model Publication No. 61-16501

  In order to obtain a sufficient antireflection effect even in the case of multiple layers, the film material must be selected so that the refractive index of each layer satisfies a specific relationship. That is, in order to produce a broadband antireflection film, a combination of materials that do not absorb in a wide wavelength range and satisfy an appropriate refractive index relationship is required. However, in the infrared region, since there are few substances that are transparent to infrared light, it is often impossible to achieve an appropriate combination of substances, and it is difficult to apply antireflection processing over a wide band. It was.

In addition, as the number of layers increases, interference becomes complicated. As a result, the reflection spectrum has a shape called a ripple that repeats high reflection and low reflection finely depending on the wavelength. In the multilayer film, ripples are very large and many, and this is an obstacle to obtaining a uniform antireflection effect in a wide band.
The present invention has been made in view of the above problems, and an object of the present invention is to provide an optical element in which an antireflection film having a good antireflection effect over a wide infrared wavelength region is formed.

In order to achieve the above object, an optical element for spectrum measurement according to the present invention comprises a substrate and infrared antireflection films provided on both the front and back surfaces of the substrate, and the infrared antireflection film comprises a plurality of optical elements. It is a multilayer film in which films are laminated, and the film structures of infrared antireflection films provided on the front side and the back side of the substrate are different from each other.
In the optical element, it is preferable that the multilayer film on the front side and the back side of the substrate has a refractive index that decreases toward the outside of the substrate, and the optical film thickness of each layer of the multilayer film is distributed between 200 and 1100 nm. It is.

In the above optical element, wherein the infrared reflection preventing film, the first layer is an optical film of ZnS counting from the substrate, the second layer is CeO ₂ of the optical film, the third layer is PbF ₂ optical film The fourth layer is preferably composed of an optical film of LaF ₃ or BaF, and the fifth layer is composed of an optical film of YF ₃ .

  The optical element according to the present invention has a good antireflection effect over a wide wavelength range because infrared antireflection films having different film configurations are provided on both the front and back surfaces of the substrate.

Hereinafter, preferred embodiments of the present invention will be described with reference to the drawings.
FIG. 2 is a schematic configuration diagram of an optical element according to an embodiment of the present invention. The optical element 10 in FIG. 2 includes a substrate 12, a first infrared antireflection film 14 provided on one surface of the substrate 12, and a second infrared antireflection film 16 provided on the other surface of the substrate 12. And comprising. Each of the infrared antireflection films 14 and 16 is formed by laminating a plurality (five layers in the figure) of optical films (14-1 to 14-5, 16-1 to 16-5). Further, the infrared antireflection films 14 and 16 are configured such that the wavelength dependency of the reflectance is different by adjusting the film configuration (refractive index and film thickness of each layer). Specifically, in the wavelength region where the reflectance of the infrared antireflection film formed on one surface is large, each of the red surfaces is reduced so that the reflectance of the infrared antireflection film on the other surface is small. The multilayer structure of the external antireflection films 14 and 16 is determined. As a result, as shown in FIG. 3, an antireflection film having a different configuration is provided on both the front and back surfaces, as in the optical element of the present embodiment, as compared with the case where an antireflection film having the same film configuration is provided on both front and back surfaces (dotted line). (Solid line) has a lower reflectivity over a wide band. Moreover, as shown in FIG. 4, it can also be set as the infrared reflection prevention film | membrane in which the ripple was canceled simultaneously. Here, FIG. 4A is a graph showing a reflection spectrum of an optical element (dotted line) provided with an infrared antireflection film only on the front surface and an optical element (dashed line) provided with an infrared antireflection film only on the back surface. FIG. 4B is a reflection spectrum of an optical element in which an infrared antireflection film is provided on both the front and back surfaces.

  As described above, the wavelength range corresponding to the peak of the reflection spectrum when it is assumed that only the first infrared antireflection film 14 is provided on the substrate is the reflection when it is assumed that only the second infrared antireflection film 16 is provided on the substrate. The wavelength range corresponding to the valley of the reflection spectrum when it is assumed that only the first infrared antireflection film 14 is provided on the substrate substantially corresponds to the wavelength range corresponding to the valley of the spectrum, and only the second infrared antireflection film 16 is provided on the substrate. Since the film structures of the first and second infrared antireflection films 14 and 16 are different from each other so as to correspond to the wavelength range corresponding to the peak of the reflection spectrum when it is assumed to be provided, there are relatively few layers. An optical element having a good antireflection effect can be obtained over a wide wavelength range (1.3 μm to 13 μm).

The substrate 12 of the optical element of this embodiment is made of ZnSe, and the infrared antireflection films 14 and 16 are optical films whose first layers (14-1 and 16-1) are ZnS as the first layer counted from the substrate 12, respectively. second layer (14-2,16-2) is CeO ₂ of the optical film, a third layer (14-3,16-3) is PbF ₂ optical film, the fourth layer (14-4,16- 4) is preferably composed of an optical film of LaF ₃ or BaF ₂ and the fifth layer (14-5, 16-5) is composed of an optical film of YF ₃ . Here, the refractive indexes of the above materials at a wavelength of 500 nm are ZnS: 2.4, CeO ₂ : 2, PbF ₂ : 1.75, LaF ₃ : 1.6, BaF ₂ : 1.48, YF _{3, respectively.} : 1.45. By adopting such a film configuration, an optical element having sufficient moisture resistance can be obtained in addition to having a good antireflection effect over a wide wavelength range (1.3 μm to 13 μm) with a relatively small number of layers. .

Furthermore, it is preferable that the refractive index of each layer of the infrared antireflection film satisfies the condition of N ₀ (N ₂ N ₄ ) ² N _b = (N ₁ N ₃ N ₅ ) ² . Here, N _n is the optical thickness of the n-th layer 14-n (n = 1 to 5) on the front side, N ₀ is the refractive index of the incident medium, and N _b is the refractive index of the substrate. .
An example of the “optical element” to which the configuration of the present invention is applied is not particularly limited as long as it has a substantially plate-like shape having opposing surfaces. For example, a window of an infrared light detector is preferable. An example.

  Hereinafter, although the more detailed Example of the optical element concerning this invention is described, this invention is not limited to this, You may take another structure.

Manufacturing Method The optically polished ZnSe substrate was kept at 150 ° C., and the surface was washed with an electronic shower. Thereafter, vacuum deposition was performed in a high vacuum with the film configuration shown in Table 1 below. The order of the layers in the table was counted from the substrate, and the optical film thickness was calculated with a refractive index of a wavelength of 500 nm.

FIG. 5 is a reflection spectrum (wavelength range: 1300 nm to 13000 nm) of the optical element of Example 1 shown in Table 1. Here, FIG. 5A shows the reflection spectrum when antireflection films are formed on both the front and back surfaces, and FIG. 5B shows the reflection spectrum of the ZnSe substrate itself (solid line), and the antireflection film is deposited only on the front side. It is a reflection spectrum (dotted line) of the ZnSe substrate that has been deposited, or a reflection spectrum of a ZnSe substrate (dashed line) having an antireflection film deposited only on the back side.
FIG. 5A shows that the optical element of Example 1 has a good antireflection effect with low ripple and low reflectance (less than 20% reflectance) over the wavelength range of 1300 nm to 13000 nm. .

Next, the test described below was performed on the optical element of Example 1 to examine moisture resistance.
Moisture resistance test (test method) The optical element of Example 1 was left for one month in an atmosphere at room temperature and 95% humidity.
(Test result) No change in appearance and transmission spectrum of the optical element of Example 1.
From the above test results, it was found that the optical element of Example 1 also has practically sufficient moisture resistance.

Manufacturing Method An infrared antireflection film having a film configuration shown in Table 2 below was formed on a ZnSe substrate by the same manufacturing method as in Example 1. The order of the layers in the table was counted from the substrate, and the optical film thickness was calculated with a refractive index of a wavelength of 500 nm.

FIG. 6 is a reflection spectrum (wavelength range: 1300 nm to 13000 nm) of the optical element of Example 2 shown in Table 2. Here, FIG. 6A shows a reflection spectrum when antireflection films are formed on both the front and back surfaces, and FIG. 6B shows an antireflection film formed only on the front side (solid line) or only on the back side (broken line). In the case of the reflection spectrum.
From FIG. 6A, it can be seen that the optical element of Example 2 has a good wavelength prevention effect with less ripple and a reflectance of less than 9% over the wavelength range of 1300 nm to 13000 nm.
Further, a moisture resistance test was performed on the optical element of Example 2 in the same manner as in Example 1, and it was confirmed that the optical element had practically sufficient performance.

The reflectivity of the Si substrate (solid line), the reflectivity (dotted line) of the one-layer optical film (SiO) formed on the Si substrate, and the two-layer optical film (CeO ₂ + MgF ₂ ) formed on the Si substrate It is the graph which showed the wavelength dependence of a reflectance (broken line). It is a schematic block diagram of the optical element concerning embodiment of this invention. A reflection spectrum (dotted line) of an optical element having an antireflection film having the same configuration on the front side and the back side of the substrate, and a reflection spectrum (solid line) of an optical element having an antireflection film having a different configuration on the front side and the back side of the substrate. It is the shown graph. FIG. 4 (a) is a graph showing the reflection spectrum of an optical element (dotted line) provided with an antireflection film only on the front side and an optical element (dashed line) provided with an antireflection film only on the back side. Is a reflection spectrum of an optical element having antireflection films on both the front and back surfaces. FIG. 5 is a reflection spectrum of the optical element of Example 1. Here, FIG. 5A shows the reflection spectrum when antireflection films are formed on both the front and back surfaces, and FIG. 5B shows the reflection spectrum of the ZnSe substrate itself (solid line), and the antireflection film is deposited only on the front side. The reflection spectrum of the ZnSe substrate (dotted line), and the reflection spectrum of the ZnSe substrate (dashed line) on which the antireflection film is deposited only on the back side. 6 is a reflection spectrum of the optical element of Example 2. FIG. 6 (a) is a reflection spectrum when antireflection films are formed on both front and back S surfaces, FIG. 6 (b) is only the front side (solid line), and the back side. It is a reflection spectrum when an antireflection film is formed only on (broken line).

Explanation of symbols

10 optical element 12 substrate 14 antireflection film 16 antireflection film

Claims (1)

A spectrum measuring optical element comprising a substrate and infrared antireflection films provided on both the front and back surfaces of the substrate,
The infrared antireflection film is a multilayer film in which a plurality of optical films are laminated. The multilayer film on the front side and the back side of the substrate is a ZnS optical film as a first layer and the second layer is CeO as counted from the substrate. ₂ optical film, the third layer is composed of PbF ₂ optical film, the fourth layer is composed of LaF ₃ or BaF optical film, and the fifth layer is composed of YF ₃ optical film . An optical element for spectrum measurement, wherein the film thickness is distributed in a range of 200 to 1100 nm.

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