JP5203559B2 - センサから電荷を駆逐するイメージングシステム及び方法 - Google Patents
センサから電荷を駆逐するイメージングシステム及び方法 Download PDFInfo
- Publication number
- JP5203559B2 JP5203559B2 JP2005241918A JP2005241918A JP5203559B2 JP 5203559 B2 JP5203559 B2 JP 5203559B2 JP 2005241918 A JP2005241918 A JP 2005241918A JP 2005241918 A JP2005241918 A JP 2005241918A JP 5203559 B2 JP5203559 B2 JP 5203559B2
- Authority
- JP
- Japan
- Prior art keywords
- sensor
- charge
- plate
- light
- controller
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000003384 imaging method Methods 0.000 title claims description 23
- 238000000034 method Methods 0.000 title description 18
- 239000011521 glass Substances 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 60
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 17
- 239000003990 capacitor Substances 0.000 description 17
- 229910052711 selenium Inorganic materials 0.000 description 17
- 239000011669 selenium Substances 0.000 description 17
- 239000000463 material Substances 0.000 description 12
- 239000004065 semiconductor Substances 0.000 description 10
- 229910052782 aluminium Inorganic materials 0.000 description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 238000005259 measurement Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 229910021417 amorphous silicon Inorganic materials 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 3
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000009607 mammography Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
Description
Claims (2)
- X線を発生させる発生器と、
発生したX線により生成される電荷を蓄えるセンサと、
センサ上方に配置され、ガラスとプラスチックの少なくとも1つによって構成されるプレートと、
プレート内で光を反射させてセンサの頂面上に均等に光を広げるためにプレートの縁近傍に配置される光源と、
センサから電荷を駆逐すべきか否かを判別し駆逐すべきであると判別したときには光源を制御して光源からの光でプレートを照らしセンサの頂面上に光を広げるコントローラと、
を備え、
プレートは、溝と反射ゾーンによるパターンを少なくとも1つを含むことを特徴とするイメージングシステム。 - 請求項1に記載のイメージングシステムにおいて、
プレートは、プレートを通るX線がプレートにより吸収されないような厚みに設定されていることを特徴とするイメージングシステム。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/929,408 | 2004-08-31 | ||
US10/929,408 US7426259B2 (en) | 2004-08-31 | 2004-08-31 | Imaging system and method that removes an electrical charge from a sensor |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006074037A JP2006074037A (ja) | 2006-03-16 |
JP5203559B2 true JP5203559B2 (ja) | 2013-06-05 |
Family
ID=35466449
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005241918A Expired - Fee Related JP5203559B2 (ja) | 2004-08-31 | 2005-08-24 | センサから電荷を駆逐するイメージングシステム及び方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US7426259B2 (ja) |
EP (1) | EP1631067A3 (ja) |
JP (1) | JP5203559B2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4441294B2 (ja) * | 2004-03-12 | 2010-03-31 | キヤノン株式会社 | 放射線撮像装置及びその制御方法 |
JP4992358B2 (ja) * | 2006-09-14 | 2012-08-08 | 株式会社島津製作所 | 電磁波検出器およびこれを用いた放射線撮影装置 |
US8084378B2 (en) | 2009-04-24 | 2011-12-27 | Johns Manville | Fiber glass mat, method and laminate |
JP5595876B2 (ja) * | 2010-11-15 | 2014-09-24 | 富士フイルム株式会社 | 放射線撮影装置、及び放射線撮影システム |
DE102012202200B3 (de) | 2012-02-14 | 2013-04-11 | Siemens Aktiengesellschaft | Röntgenstrahlungsdetektor und Verfahren zum Messen von Röntgenstrahlung |
WO2013188498A2 (en) * | 2012-06-12 | 2013-12-19 | Arizona Board Of Regents Acting For And On Behalf Of Arizona State University | Imaging system and methods of manufacturing and using the same |
DE102012213494A1 (de) * | 2012-07-31 | 2014-02-06 | Siemens Aktiengesellschaft | Detektion von Röntgenstrahlung und Röntgendetektorsystem |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0837288A (ja) * | 1994-07-22 | 1996-02-06 | Fuji Xerox Co Ltd | 画像読取装置 |
US5563421A (en) * | 1995-06-07 | 1996-10-08 | Sterling Diagnostic Imaging, Inc. | Apparatus and method for eliminating residual charges in an image capture panel |
JP4150079B2 (ja) * | 1996-07-08 | 2008-09-17 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体x線検出器を有するx線検査装置 |
JP3180043B2 (ja) * | 1996-12-26 | 2001-06-25 | シャープ株式会社 | 画像入力装置 |
CA2200532C (en) * | 1997-03-20 | 2002-02-26 | Benoit Adam | X-ray image erasure method |
US6648485B1 (en) * | 2000-11-13 | 2003-11-18 | International Business Machines Corporation | Highly collimating tapered light guide for uniform illumination of flat panel displays |
-
2004
- 2004-08-31 US US10/929,408 patent/US7426259B2/en not_active Expired - Fee Related
-
2005
- 2005-08-24 JP JP2005241918A patent/JP5203559B2/ja not_active Expired - Fee Related
- 2005-08-31 EP EP05107959A patent/EP1631067A3/en not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
EP1631067A2 (en) | 2006-03-01 |
JP2006074037A (ja) | 2006-03-16 |
US7426259B2 (en) | 2008-09-16 |
EP1631067A3 (en) | 2008-09-03 |
US20060045239A1 (en) | 2006-03-02 |
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