JP5186259B2 - Semiconductor light emitting element and lighting device using the same - Google Patents

Description

  The present invention relates to a semiconductor light-emitting element that emits light by combining electrons and holes in a semiconductor and a lighting device using the same, and more particularly, the light extraction efficiency of a semiconductor light-emitting element having a light emission peak on a shorter wavelength side than red. It is related with the technique for improvement.

  2. Description of the Related Art Conventionally, in a semiconductor light-emitting device in which an n-type semiconductor layer, the light-emitting layer, and a p-type semiconductor layer are stacked on a growth substrate that is transparent at the light emission wavelength of the light-emitting layer, light extraction efficiency (or external quantum efficiency) In order to improve the above, a method of forming a reflective film having a high reflectance on the surface opposite to the light extraction surface from the light emitting layer is used. This is because the light generated in the semiconductor light emitting layer is directed in all directions, and as shown in FIG. 9, the light is directed obliquely (the emission angle is large) than the light exiting immediately above the light emitting point (the emission angle is small). This is because most of the light emitted from the light emitting layer is multiple-reflected inside the device and becomes a loss because there is more light.

  FIG. 10 shows changes in light extraction efficiency with respect to changes in the reflectance of the reflective film. As is apparent from FIG. 10, in order to increase the light extraction efficiency to 70% or more, the reflectance is required to be 95% or more, and in the region of 95% or more, the reflectance is only improved by 1%. The extraction efficiency is improved by about 6%. Here, in the case of a GaAs semiconductor, by using Au as an electrode material that also serves as the reflection film, a high reflectance can be obtained and light extraction efficiency can be improved.

  However, the reflectance of the metal greatly depends on the wavelength, and such a method cannot be used for an oxide or nitride-based compound semiconductor light-emitting element having an emission peak shorter than the red color. For example, ohmic contact cannot be ensured between a GaN-based material and a highly reflective metal such as silver or aluminum. For this reason, a laminated electrode of a metal such as Ni, Pt, or Rh, a metal oxide such as ITO (Indium Tin Oxide), and the highly reflective metal is used, and the reflection is higher than the intrinsic reflectance of the highly reflective metal. Getting rates is getting harder.

Therefore, Non-Patent Document 1 has been proposed as a prior art that can solve such a problem. In the prior art, in order to ensure reflectivity higher than the reflectivity inherent to the highly reflective metal, between the silver as the highly reflective metal and the pGaN layer, which is a semiconductor layer, a 1/4 optical wavelength of SiO. _Two films are laminated, and a higher reflectance than that of a single silver film is obtained for all incident angles. As a result, an ODR (omni-directional reflector: omnidirectional reflector electrode structure) is formed, and the average reflectance is 98% at a calculated value of a wavelength of 450 nm. In addition, the ohmic contact forms a RuO ₂ (ruthenium oxide) film between the pGaN layer and the SiO ₂ film, and the silver layer passes from the RuO ₂ film to the pGaN layer through the opening formed in the SiO ₂ film. Secured by electrically connected microcontacts.
GaInN light-emitting diodes with RuO2 OSiO2 OAg omni-directional reflector (Jong Kyu Kim, Thomas Gesmann, Hong Luo, and E. Fred Schubert. Applied Physics Letters 84, 4508 (2004) Rensselaer Institute of Technology)

In the above-described prior art, high reflectivity is obtained for all incident angles. However, when the present inventor performed similar calculations, the film thickness of the SiO ₂ film is as shown in FIG. In the 1/8 optical wavelength film thickness (0.5Q), the reflectance is reduced by about 20% in a wide angle range centered at about 55 degrees, and in the 1/4 optical wavelength film thickness (1Q), about 45 degrees is centered. It was found that there was a reduction in reflectance of about 30%. This is because, when a single layer SiO ₂ film is formed on a metal as a reflective film, when the incident angle is small, good reflection can be obtained with the 1/4 optical wavelength film thickness (1Q). When it becomes larger, it is considered that light leached from the semiconductor layer called near-field or evanescent wave as shown in FIG. 12 into the SiO ₂ film is combined with the silver film layer. In FIG. 11, ¼ optical wavelength film thickness (= λ / 4n) = 1Q, where n is the refractive index. In FIG. 11, the data characteristics of Non-Patent Document 1 correspond to 5Q and 6Q characteristics.

  As shown in FIG. 13, the amount of the oozing is 0 until the incident angle θ reaches the critical angle θc, oozes to a depth of the wavelength λ at the critical angle θc, and then decreases exponentially. Go. θc = 30 to 40 °.

  The objective of this invention is providing the semiconductor light-emitting device which can improve light extraction efficiency, and an illuminating device using the same.

  In the semiconductor light-emitting device of the present invention, an n-type semiconductor layer, the light-emitting layer, and a p-type semiconductor layer are stacked on a growth substrate having translucency at the light emission wavelength of the light-emitting layer, and a light extraction surface from the light-emitting layer is obtained. In the semiconductor light emitting device having a reflective film on the surface opposite to the reflective film, the reflective film has a refractive index lower than the refractive index of the growth substrate or the semiconductor layer in contact with the reflective film at the emission wavelength. A first transparent layer having a thickness of 10 optical wavelengths or more; and a first transparent layer that is laminated on the first transparent layer and is lower than a refractive index of the growth substrate or the semiconductor layer at the emission wavelength. A second transparent layer having a refractive index higher than that of the first transparent layer, having a stress characteristic opposite to that of the first transparent layer, and having a thickness several times that of the first transparent layer, and the second transparent layer. Metal material laminated on the layer and having high reflectivity Characterized in that it is constituted by a metal layer made of.

  According to the above configuration, a substrate or a semiconductor layer that has translucency at the emission wavelength of the light-emitting layer and becomes conductive by appropriately including a conductive buffer layer on a conductive substrate or an insulating substrate. Semiconductor light-emitting device in which at least an n-type semiconductor layer, the light-emitting layer, and a p-type semiconductor layer are stacked in this order or the reverse order on a growth substrate such as an insulating substrate that is appropriately separated after the growth of In order to improve the light extraction efficiency by providing a reflection film on the surface opposite to the light extraction surface from the light emitting layer, the reflection film is formed on the growth substrate in contact with the reflection film at the emission wavelength or Two transparent layers having a refractive index lower than the refractive index of the semiconductor layer, and a metal layer made of a metal material having a high reflectance and laminated on the two transparent layers. Then, the two transparent layers are laminated on the growth substrate or the semiconductor layer, the first transparent layer having a relatively low refractive index and a thickness of 1/10 optical wavelength or more, and the first layer A second transparent layer laminated on the transparent layer, having a relatively high refractive index, having a stress characteristic opposite to that of the first transparent layer, and having a thickness several times that of the first transparent layer; Consists of.

  Therefore, light incident at a relatively shallow angle (small incident angle) up to the critical angle θc is reflected by the transparent layer or metal layer, and is relatively deep beyond the critical angle θc (large incident angle). The light incident on the surface of the growth substrate such as GaN having a high refractive index or the interface between the semiconductor layer and the reflective film becomes light that oozes out from the interface referred to as a near-field or evanescent wave to the transparent layer. However, the transparent layer is a first transparent layer having a thickness of 1/10 optical wavelength or more, and is laminated thereon, and the second transparent layer having a relatively high refractive index is several times as large as the first transparent layer. By being formed in a thickness, there is little possibility that the metal layer passes through the transparent layer and is absorbed by the metal layer, most of which returns (bounces back) from the transparent layer to the interface, and grows from the interface. Re-enter the substrate or semiconductor layer to extract the light Turn to the side.

  Therefore, it is possible to efficiently extract light incident on the reflection film at all incident angles, to reduce power consumption when extracting the same light, and to increase brightness when injecting the same power. Can do. In addition, the transparent layer is divided into two layers, and when one generates tensile stress, the other generates compressive stress. Peeling can be prevented and process stability can be ensured.

In the semiconductor light emitting device of the present invention, the first transparent layer is made of SiO ₂ and the second transparent layer is made of ZrO ₂ .

According to the above configuration, while satisfying the above-described refractive index relationship, SiO ₂ often shows tensile stress and ZrO ₂ shows compressive stress when the film is formed by a general EB vapor deposition method. The characteristics can also be satisfied. Further, when a silver-based material is used for the metal layer, ZrO ₂ has higher adhesion than SiO ₂ , and in this sense, a highly reflective layer can be formed while ensuring process stability.

  Furthermore, in the semiconductor light emitting device of the present invention, the thickness of the first transparent layer is about 30 nm, and the thickness of the second transparent layer is about 5 times that of the first transparent layer. To do.

According to the above structure, when deposited in the general EB evaporation method as described above, SiO ₂ is a tensile stress, ZrO ₂ often show compressive stress, the ZrO ₂ having a thickness of canceling the stress About 5 times that of SiO ₂ . For example, stress can be canceled when SiO ₂ = 30 nm and ZrO ₂ = 160 nm. However, since stress is dependent on the device, it is not limited to 5 times, but if it is about 4 times or less, the total reflection effect is small, and if it exceeds 6 times, the total reflection effect is obtained, but total reflection is not possible. In a region where no reflection occurs, the reflectance decreases due to interference.

  In addition, when the reflective film is formed on the semiconductor layer, the semiconductor light emitting device of the present invention has conductivity between the semiconductor layer and the first and second transparent layers. And a first electrode layer transparent at the emission wavelength is laminated, and the first and second transparent layers are formed on the first electrode layer so as to have an opening, and the metal layer has the opening. To the first and second transparent layers, and electrically conductive with the first electrode layer to form a second electrode layer.

  According to the above configuration, when the reflective film is formed on the semiconductor layer (mostly p-type) and also serves as the (p-type) electrode, the semiconductor layer has conductivity with the semiconductor layer. A first electrode layer transparent to the emission wavelength is laminated, and the first and second transparent layers are formed to have openings on the first electrode layer. Then, the metal layer is laminated on the first and second transparent layers from the opening, and is electrically connected to the first electrode layer to form a second electrode layer.

  Therefore, a through hole is formed in the first and second transparent layers, or the transparent layer is divided into several regions, and the inside of the through hole and around the region. The electrodes connecting the front and back of the first and second transparent layers pass through, and the semiconductor layer and the highly reflective metal layer are electrically connected without sacrificing the high reflectivity by the first and second transparent layers. A sufficient current can be injected into the light emitting layer.

  Furthermore, in the semiconductor light emitting device of the present invention, the first electrode layer is formed by laminating ITO with a thickness of 30 nm or less.

  According to said structure, when the said 1st electrode layer is formed with ITO of a metal oxide and the thickness shall be 30 nm or less, the transmittance | permeability of 98% or more can be ensured, and the total reflection effect in a transparent layer can be ensured. Does not interfere. Especially preferably, it is 10 nm or less.

  In the semiconductor light emitting device of the present invention, the first electrode layer is formed of a highly reflective metal with little absorption and a thickness of 5 nm or less.

  According to the above configuration, when the first electrode layer is a highly reflective metal with little absorption and the thickness is 5 nm or less, the absorption can be 1% or less.

  Furthermore, in the semiconductor light emitting device of the present invention, the high reflectivity metal is silver, and the first electrode layer is formed to be 2 nm or less.

  According to said structure, there is very little absorption and it is especially suitable.

  In the semiconductor light emitting device of the present invention, when the reflective film is in contact with the semiconductor layer and the semiconductor layer is p-type, the first electrode layer has Pt or Rh or an alloy thereof of about 2 nm or less. It is characterized by being formed in a mesh-like or minute region group that is laminated and has an area occupancy of 50% or less.

  According to said structure, as said 1st electrode layer, Pt or Rh, or those alloys can be ohmic-connected with a GaN-type p-type semiconductor layer, and a reflectance is 60% or more. Therefore, by forming them in a mesh or minute region group having a thickness of about 2 nm or less and an occupation ratio of 50% or less, preferably 25% or less, the forward voltage can be reduced without sacrificing high reflection. It is possible and suitable.

  Furthermore, in the semiconductor light emitting device of the present invention, the metal layer is silver or a silver alloy.

  According to the above configuration, by laminating the transparent layer and silver, a reflectance of 98% to 99% on average is obtained, and high light extraction efficiency is possible.

  In the semiconductor light emitting device of the present invention, the silver thickness of the metal layer is 80 nm or more.

  According to said structure, although it changes with film-forming methods and film-forming conditions, when the refractive index (n, k) of silver is (0.066, 2.5), the film thickness is 80 nm and the reflectance Since (R) is 93% or more and transmittance (T) is 3% or less, a film thickness of 80 nm or more is desirable to obtain high reflectance. Here, k of the refractive index is “absorption coefficient” or “attenuation coefficient”. However, as the film thickness increases, peeling due to film stress is likely to occur, and therefore, about 100 nm is particularly preferable.

  Furthermore, the lighting device of the present invention is characterized by using the semiconductor light emitting element.

  According to said structure, the light extraction efficiency can be improved and, therefore, the illuminating device which can achieve low power consumption and high brightness | luminance is realizable.

  As described above, in the semiconductor light-emitting device of the present invention, at least the n-type semiconductor layer, the light-emitting layer, and the p-type semiconductor layer are arranged in this order on the growth substrate having translucency at the emission wavelength of the light-emitting layer. Alternatively, in the semiconductor light-emitting device formed by laminating in the reverse order, a reflective film is provided on the surface opposite to the light extraction surface from the light-emitting layer to improve the light extraction efficiency. It consists of two transparent layers having a refractive index lower than the refractive index of the growth substrate or semiconductor layer in contact with the reflective film at a wavelength, and a metal material having a high reflectance laminated on the two transparent layers. A first transparent layer that is laminated on the growth substrate or semiconductor layer, has a relatively low refractive index, and has a thickness of 1/10 optical wavelength or more. A layer and on the first transparent layer Are stacked, relatively a high refractive index, said first transparent layer have opposite stress characteristics, constituted by a second transparent layer having a multiple of the thickness of the first transparent layer.

  Therefore, light incident at a relatively deep angle exceeding the critical angle θc is referred to as a near-field or evanescent wave at the interface between the reflective substrate and a growth substrate or semiconductor layer such as GaN having a high refractive index. Even when light penetrates from the interface to the transparent layer, the transparent layer is laminated on the first transparent layer with a thickness of 1/10 optical wavelength or more, and has a relatively high refractive index. The transparent layer is formed to have a thickness several times that of the first transparent layer, so that there is little possibility that the transparent layer will be absorbed by the metal layer through the transparent layer. Because it returns to (rebounds), it is possible to efficiently extract the light incident on the reflective film at any incident angle. When the same light is extracted, the power consumption can be reduced and the same power is injected. The brightness can be increased. In addition, the transparent layer is divided into two layers, and when one generates tensile stress, the other generates compressive stress. Peeling can be prevented and process stability can be ensured.

In the semiconductor light emitting device of the present invention, as described above, the first transparent layer is made of SiO ₂ and the second transparent layer is made of ZrO ₂ .

Therefore, in addition to satisfying the above-described refractive index relationship, when a film is formed by a general EB vapor deposition method, SiO ₂ often exhibits tensile stress and ZrO ₂ exhibits compressive stress, which satisfies the above-described stress characteristics. You can also.

Furthermore, as described above, when the semiconductor light emitting device of the present invention is formed by a general EB vapor deposition method, SiO ₂ often shows tensile stress, ZrO ₂ shows compressive stress, and ZrO cancels stress. _Since the film thickness of ₂ is about 5 times that of SiO ₂ , the thickness of the first transparent layer is about 30 nm, and the thickness of the second transparent layer is about 5 times that of the first transparent layer.

  Therefore, the stress can be canceled.

  Further, as described above, in the semiconductor light emitting device of the present invention, when the reflective film is formed on the semiconductor layer and also serves as an electrode, the semiconductor layer has conductivity with the semiconductor layer, and A first electrode layer that is transparent at an emission wavelength is laminated, the first and second transparent layers are formed on the first electrode layer so as to have an opening, and the metal layer is formed from the opening through the first electrode layer. The second electrode layer is laminated on the second transparent layer and is electrically connected to the first electrode layer.

  Therefore, through-holes are formed in the first and second transparent layers, or the first and second transparent layers are divided into several regions, and the through-holes are formed. An electrode connecting the front and back of the first and second transparent layers passes through the hole and around the region, and the high reflectivity by the first and second transparent layers is not sacrificed, and the semiconductor layer is highly reflective. A sufficient current can be injected into the light emitting layer by electrically connecting the metal layer.

  Furthermore, in the semiconductor light emitting device of the present invention, as described above, the first electrode layer is formed of metal oxide ITO and the thickness thereof is 30 nm or less.

  Therefore, a transmittance of 98% or more can be secured, and the total reflection effect in the transparent layer is not hindered.

  In the semiconductor light emitting device of the present invention, as described above, the first electrode layer is made of a highly reflective metal with little absorption and has a thickness of 5 nm or less.

  Therefore, the absorption can be 1% or less.

  Furthermore, in the semiconductor light emitting device of the present invention, as described above, the high reflectance metal is silver, and the first electrode layer is formed to 2 nm or less.

  Therefore, the absorption is very small and it is particularly suitable.

  As described above, in the semiconductor light emitting device of the present invention, when the reflective film is in contact with the semiconductor layer and the semiconductor layer is p-type, the first electrode layer is connected to the GaN-based p-type semiconductor layer. A mesh that can be connected and is made of Pt or Rh having a reflectance of 60% or more, or an alloy thereof, and having a thickness of about 2 nm or less and an occupation ratio of 50% or less, preferably 25% or less. Or it forms in a micro area group.

  Therefore, the forward voltage can be reduced without sacrificing high reflection, which is preferable.

  Furthermore, in the semiconductor light emitting device of the present invention, the metal layer is made of silver or a silver alloy as described above.

  Therefore, by laminating the transparent layer and silver, an average reflectance of 98% to 99% or more is obtained, and high light extraction efficiency is possible.

  In the semiconductor light emitting device of the present invention, the silver thickness of the metal layer is 80 nm or more as described above.

  Therefore, both high reflectance and film characteristics can be achieved.

  Furthermore, the illumination device of the present invention uses the semiconductor light emitting element as described above.

  Therefore, it is possible to improve the light extraction efficiency, and thus it is possible to realize an illumination device that can achieve low power consumption and high luminance.

  1 to 4 are sectional views showing structures of light emitting diodes 1 to 4 which are semiconductor light emitting elements according to an embodiment of the present invention. The structure of FIGS. 1 to 4 shows a typical structure example of a semiconductor light emitting device to which the present invention is applied. The light emitting diode 1 of FIG. 1 is a flip chip type, and the light emission of FIGS. The diodes 2 to 4 are wire bond types.

  In the light emitting diode 1 of FIG. 1, an n-type semiconductor layer 11, a light emitting layer 12, and a p type semiconductor layer 13 are stacked on a growth substrate (not shown), and a surface opposite to the light extraction surface 14 from the light emitting layer 12. In the light-emitting diode having a reflective film, it should be noted that the p-type electrode is a reflective film according to the present invention. The reflective film has a refractive index lower than the refractive index of the p-type semiconductor layer 13 in contact with the reflective film at a light emission wavelength of the light emitting layer 12, and has a thickness of 1/10 optical wavelength or more. The transparent layer 15a is laminated on the first transparent layer 15a, and has a refractive index lower than that of the p-type semiconductor layer 13 and higher than that of the first transparent layer 15a at the emission wavelength. A second transparent layer 15b having a stress characteristic opposite to that of the first transparent layer 15a and having a thickness several times that of the first transparent layer 15a is laminated on the second transparent layer 15b. And a metal layer 16 made of a metal material having a high reflectance.

Each of the layers 11 to 13 is made of a III-V group semiconductor or a II-VI group semiconductor. For example, in the case of GaN, the wavelength is about λ = 455 nm and the refractive index is about 2.5. The first transparent layer 15a is made of, for example, SiO ₂ , and the refractive index in that case is about 1.43. The second transparent layer 15b is made of, for example, ZrO ₂ , and the refractive index in that case is about 1.95. The metal layer 16 is made of silver, for example. After the metal layer 16 is formed, a corner is engraved to form an n-type electrode 17 connected to the n-type semiconductor layer 11, and after the growth substrate is peeled off, the light extraction surface 14 is formed. Concavities and convexities are formed on the peeled surface, and the structure shown in FIG. 1 is obtained.

2, an n-type semiconductor layer 21, a light-emitting layer 22, and a p-type semiconductor layer 23 are stacked on a growth substrate (not shown), and is opposite to the light extraction surface 24 from the light-emitting layer 22. In the light emitting diode having the reflective film on the surface, it should be noted that the p-type electrode is a reflective film according to the present invention. The reflective film has a refractive index lower than a refractive index of the p-type semiconductor layer 23 in contact with the reflective film at a light emission wavelength of the light emitting layer 22, and has a thickness of 1/10 optical wavelength or more. A transparent layer 25a is laminated on the first transparent layer 25a, and has a refractive index lower than that of the p-type semiconductor layer 23 and higher than that of the first transparent layer 25a at the emission wavelength. A second transparent layer 25b having a stress characteristic opposite to that of the first transparent layer 25a and having a thickness several times that of the first transparent layer 25a is laminated on the second transparent layer 25b. And a metal layer 26 made of a metal material having a high reflectance. The layers 21 to 23, III-V group semiconductor or a II-VI semiconductor, for example made of GaN, the first transparent layer 25a is made of, for example, SiO _2, the second transparent layer 25b is, for example ZrO ₂ and the metal layer 26 is made of silver, for example. Then, after the metal layer 26 is formed, the growth substrate is peeled off, and unevenness is formed on the peeled surface that becomes the light extraction surface 24, and an n-type electrode 27 is formed on the unevenness. The metal layer 26 becomes a p-type contact and has the configuration shown in FIG.

On the other hand, in the light emitting diode 3 of FIG. 3, the n-type semiconductor layer 31, the light emitting layer 32, and p are formed on the growth substrate (or bonded substrate) 30 having irregularities at the interface 30 a and transparent at the light emission wavelength of the light emitting layer 32. In a light emitting diode in which a type semiconductor layer 33 is stacked and a reflective film is provided on the surface opposite to the light extraction surface 34 from the light emitting layer 32, it should be noted that the back surface of the growth substrate 30 is a reflective surface according to the present invention. It is to make a film. The reflective film has a refractive index lower than the refractive index of the growth substrate 30 in contact with the reflective film at the light emission wavelength of the light emitting layer 32, and has a thickness of 1/10 optical wavelength or more. 35a and the first transparent layer 35a. The first transparent layer 35a has a refractive index lower than the refractive index of the growth substrate 30 and higher than the first transparent layer 35a at the emission wavelength. The second transparent layer 35b has a stress characteristic opposite to that of the transparent layer 35a and has a thickness several times that of the first transparent layer 35a. The second transparent layer 35b is laminated on the second transparent layer 35b, and is highly reflective. And a metal layer 36 made of a metal material having a ratio. The growth substrate 30 is made of GaN, ZnO, or Al ₂ O ₃ . Each of the layers 31 to 33 is made of a III-V group semiconductor or a II-VI group semiconductor. For example, in the case of GaN, the wavelength is about λ = 455 nm and the refractive index is about 2.5. The first transparent layer 35a is made of, for example, SiO ₂ , and the second transparent layer 35b is made of, for example, ZrO ₂ . The metal layer 36 is made of, for example, silver. Then, a transparent conductive layer 38 is formed on the p-type semiconductor layer 33, and the first and second transparent layers 35a and 35b and the metal layer 36 are formed on the back side, and then a corner is engraved. An n-type electrode 37 and a p-type electrode 39 are formed on the transparent conductive layer 38 to have the configuration shown in FIG. Note that the n-type semiconductor layer 31 and the p-type semiconductor layer 33 may be interchanged. In that case, the electrode 37 is p-type and the electrode 39 is n-type.

  Furthermore, in the light-emitting diode 4 of FIG. 4, an n-type semiconductor layer 41, a light-emitting layer 42, and a p-type semiconductor layer 43 are stacked on a growth substrate (or a bonded substrate) 40 that is transparent at the emission wavelength of the light-emitting layer 42. In the light emitting diode having a reflective film on the surface opposite to the light extraction surface 44 from the light emitting layer 42, the back surface of the growth substrate 40 is connected to the first and second transparent layers 35a and 35b and the metal layer 36. The same as the first and second transparent layers 45a and 45b and the metal layer 46. The difference from FIG. 3 is that the unevenness is formed on the upper surface of the p-type semiconductor layer 43 which is the light extraction surface 44. Also in the light emitting diode 4, the n-type semiconductor layer 41 and the p-type semiconductor layer 43 may be interchanged, and the n-type electrode 47 and the p-type electrode 49 may be p-type and n-type, respectively.

As described above, in the present embodiment, the reflectance is not improved by ¼ optical wavelength thin film interference as in Non-Patent Document 1, but a medium having a high refractive index (for example, GaN material: refractive index = 2.5). ) From a low refractive index medium (for example, SiO ₂ : refractive index = about 1.43, ZrO ₂ : refractive index = about 1.95). A first transparent layer 15a, 25a, 35a, 45a having a thickness of 10 optical wavelengths or more and a laminated layer thereon, having a higher refractive index than the first transparent layer 15a, 25a, 35a, 45a, and having an opposite stress A second transparent layer 15b, 25b, 35b, 45b having characteristics and several times the thickness, and a metal layer 16, 26, 36, 46 of silver, silver alloy, Al, Al alloy laminated thereon. Create a reflective layer and light An uneven structure that disturbs the regular reflection angle is arranged on the extraction surfaces 14, 24, 44, or the interface 30a. As a result, in the region where the incident angle θ is small, it is not possible to expect an improvement in reflectance that exceeds the case where the quarter optical wavelength film according to Non-Patent Document 1 is laminated, but the actual light emitting layers 12, 22, Considering the radiation angle distribution of the light from 32 and 42, a higher average reflectance can be obtained.

  Specifically, light incident at a relatively deep angle exceeding the critical angle θc is a near-field or evanescent wave at the interface between the growth substrate 30 or 40 or the semiconductor layers 13 and 23 having a high refractive index and the reflective film. The first and second transparent layers 15a, 15b; 25a, 25b; 35a, 35b; 45a, 45b are leached from the interface, and the first transparent layer has a relatively low refractive index. The layers 15a, 25a, 35a, 45a have a thickness of 1/10 optical wavelength or more, and the second transparent layers 15b, 25b, 35b, 45b having a relatively high refractive index have a thickness several times that of the second transparent layers 15b, 25b, 35b, 45b. The first and second transparent layers 15a, 15b; 25a, 25b; 35a, 35b; 45a, 45b are less likely to be absorbed by the metal layers 16, 26, 36, 46, Most The second transparent layers 15a, 15b; 25a, 25b; 35a, 35b; 45a, 45b return to the interface (bounce back), and from the interface to the growth substrate 30, 40 or the semiconductor layers 13, 23 again. Incident light is directed toward the light extraction surfaces 14, 24, 34, 44. The light that is not extracted by one transmission and re-reflected in this way is also subjected to an angle conversion action at the uneven light extraction surfaces 14, 24, 44 or the interface 30a, statistically the first Since the distribution is considered to be similar to that of light emission, the quarter optical wavelength film according to Non-Patent Document 1 is laminated when weighting these radiation angle distributions and considering the weighted average reflectance for all incident angles. Compared with the case where it was made, the higher reflectance can be obtained. In this way, light incident on the reflection film at any incident angle can be efficiently extracted, and when the same light is extracted, the power consumption can be reduced, and when the same power is injected, the brightness is increased. Can do. Further, with such a film configuration, precise film thickness control is unnecessary and the number of film layers is small, so that the process is easy.

  Further, the transparent layer is divided into two transparent layers 15a and 15b, and when one generates tensile stress, the other generates compressive stress. Therefore, peeling of the transparent layers 15a and 15b can be prevented and process stability can be ensured.

Here, as described above, when the first transparent layer 15a is made of SiO ₂ and the second transparent layer 15b is made of ZrO ₂ , the above-described refractive index relationship is satisfied, and a general EB vapor deposition method is used. When the film is formed, SiO ₂ often shows tensile stress and ZrO ₂ shows compressive stress, and the above-described stress characteristics can also be satisfied. In addition, when a silver-based material is used for the metal layers 16, 26, 36, and 46, ZrO ₂ has higher adhesion than SiO ₂ , and in this sense, a highly reflective layer while ensuring process stability. Can be created.

Specifically, when the film is formed by the general EB vapor deposition method, the linear expansion coefficient of the SiO ₂ tension is about five times that of the compression of ZrO ₂ . Therefore, FIG. 5 shows the result of simulation of the characteristics of the reflectance change with respect to the incident angle change at the interface with GaN, with the film thickness of 1: 5. The simulation software used is a trade name “optas-film” manufactured by Opto, which is a general multilayer film simulation software. FIG. 5 also shows the change in reflectance of the silver layers that are the metal layers 16, 26, 36 and 46. DBR indicates the reflectance in the case of a multilayer reflective film in which the SiO ₂ and ZrO ₂ are alternately formed as thin films in multiple layers.

  From the results shown in FIG. 5, the first transparent layers 15a, 25a, 35a, 45a have a thickness of 31 nm and a reflectance of 95% or more at an incident angle of 10 ° or more. The first transparent layers 15a, 25a , 35a, 45a have a thickness of about 30 nm.

  On the other hand, FIG. 6 shows changes in incident angle when the first transparent layers 15a, 25a, 35a, 45a are fixed to 30 nm and the thicknesses of the second transparent layers 15b, 25b, 35b, 45b are changed. The simulation result of a reflectance change is shown. Since the stress depends on the device, the stress is not limited to 5 times that of FIG. 5, but from the result of FIG. 7, if it is about 4 times (100 nm) or less, the total reflection effect is small and about 6 times ( If it exceeds 200 nm), a total reflection effect can be obtained, but a decrease in reflectance due to interference is observed in a region where total reflection is not performed. For this reason, the thickness of the second transparent layers 15b, 25b, 35b, 45b is approximately five times that of the first transparent layers 15a, 25a, 35a, 45a. Thus, both optical characteristics and film stability can be achieved.

  Note that, when the first and second transparent layers 15a, 15b; 25a, 25b; 35a, 35b; 45a, 45b are laminated, the film stress can be reduced by using sputtering, but the semiconductor layer is damaged. Therefore, when EB vapor deposition with a small damage is used, the film stress increases as described above.

However, the two transparent layers 15a and 15b are not limited to the SiO ₂ and ZrO ₂ , but silicon oxide (SiO, SiO ₂ , Si _x O _y etc.), silicon nitride (SiN, Si ₂ N). ₃ , Si _x N _y, etc.), zirconium oxide (ZrO ₂ , ZrO _x etc.), titanium oxide (TiO, TiO ₂ , Ti _x O _y etc.), titanium nitride (TiN, TiN ₂ , Ti _x N _y etc.), tantalum oxide _{(TaO, TaO 2, Ta x} O y), tantalum nitride _{(TaN, TaN 2, Ta x} N y), aluminum oxide _{(Al 2 O 3, Al x} O y) ( or, x, y is an arbitrary integer ) Etc. may be used.

  1 to 4 exemplify minute irregularities as shapes that disturb the regular reflection angle, the purpose is to eliminate repeated multiple reflections of regular reflection in a rectangular parallelepiped, and the shape is not limited to this. By changing the macro structure of the element, the side surface of the element may be inclined, or the element itself may be a pyramid structure having a truncated pyramid shape.

  When the metal layers 16, 26, 36, 46 are made of silver or a silver alloy, the first and second transparent layers 15a, 15b; 25a, 25b; 35a, 35b; 45a, 45b are laminated. As shown in FIG. 5, the reflectance (average (Rw)) is 98% to 99% or more, and high light extraction efficiency can be obtained, which is preferable. However, the highly reflective metal is not limited to a silver-based material, and Al is desirable for a light emitting element in the ultraviolet region. Even when the first and second transparent layers 15a, 15b; 25a, 25b; 35a, 35b; 45a, 45b are laminated on Al, the radiant flux is small in the incident angle region where the reflectance of Al contributes, Since the total reflection effect contributes in a region where the incident angle is large, an average higher effect than the reflectance of Al itself can be obtained.

  Furthermore, although the film forming method and the film forming conditions are changed, when the refractive index (n, k) of silver is (0.066, 2.5), the film thickness, the reflectance (R), and the transmittance. (T) and the absorption rate (A) are as shown in FIG. Therefore, in order to obtain a high reflectance, a film thickness of 80 nm or more is desirable. Moreover, since peeling due to film stress tends to occur as the film thickness increases, the thickness is desirably 200 nm or less. In particular, about 100 nm is preferable in terms of both reflectance and film stability.

  3 and 4, the first and second transparent layers 35a and 35b; 45a and 45b and the metal layers 36 and 46 are formed on the growth substrates 30 and 40, and the diode current is reduced. In contrast to the light emitting diodes 1 and 2 shown in FIGS. 1 and 2, the metal layers 16 and 26 are p-type electrodes, and the first and second transparent layers 15a. , 15b; 25a, 25b are formed on the p-type semiconductor layers 13 and 23 and are provided in the path of the diode current. As described above, when the reflective film is formed on the p-type semiconductor layers 13 and 23 and also serves as the p-type electrode, as shown in FIGS. And the second transparent layers 15a, 15b; 25a, 25b, the first electrode layer having conductivity (ohmic contact) with the p-type semiconductor layers 13, 23 and transparent at the emission wavelength. The first and second transparent layers 15a, 15b; 25a, 25b having openings (through holes) 15x, 25x are formed on the transparent conductive layers 19, 29. The metal layers 16, 26 are stacked on the first and second transparent layers 15a, 15b; 25a, 25b through the openings 15x, 25x, and the transparent conductive layers 19, 29 to the p-type semiconductor layers 13, 23, respectively. Electrically conducting The second electrode layer.

  Thus, when the reflective film also serves as an electrode and requires ohmic junction, a micro contact hole is formed in the first and second transparent layers 15a, 15b; 25a, 25b utilizing the total reflection effect, The openings 15x and 25x are formed by dividing the first and second transparent layers 15a and 15b; 25a and 25b into a mesh or the like, and the openings 15x and 25x are stacked in a highly reflective metal. By covering with the layers 16 and 26, ohmic junction with the transparent conductive layers 19 and 29 becomes possible. Thus, the semiconductor layers 13 and 23 and the highly reflective metal layers 16 and 26 are electrically connected without sacrificing the high reflectivity by the first and second transparent layers 15a and 15b; 25a and 25b. A sufficient current can be injected into the light emitting layers 12 and 22.

The transparent conductive layers 19 and 29 which are the first electrode layers are formed by laminating, for example, metal oxide ITO with a thickness of 30 nm or less. In this case, a transmittance of 98% or more can be secured, and the total reflection effect in the first and second transparent layers 15a and 15b; 25a and 25b is not inhibited. Especially preferably, it is 10 nm or less. In addition to ITO, magnesium hydroxide (Mg (OH) ₂ ) can also be used.

  The transparent conductive layers 19 and 29, which are the first electrode layers, are formed by laminating a highly reflective metal with little absorption, such as silver, with a thickness of 5 nm or less. In this case, as shown in the enlarged view of FIG. 8 where the film thickness is 20 nm or less in FIG. 7, the absorption can be 1% or less. In particular, from FIG. 8, by setting the thickness to 2 nm or less, the absorption becomes extremely small, which is preferable.

  Furthermore, the transparent conductive layers 19 and 29 which are the first electrode layers and are in contact with the p-type semiconductor layers 13 and 23 can be ohmic-connected to the GaN-based p-type semiconductor layers 13 and 23 and have a reflectivity. It is made of Pt or Rh that is 60% or more, or an alloy thereof. Then, the high reflection is sacrificed by forming the openings 19x and 29x by dividing them into meshes or minute regions having a thickness of about 2 nm or less and an occupation ratio of 50% or less, preferably 25% or less. Therefore, the forward voltage can be reduced, which is preferable.

  Here, in JP-A-2006-128450, a dielectric optical multilayer film and a highly reflective metal (Al, Ag, Ag alloy, etc.) are laminated, and the dielectric optical multilayer film is incident up to several tens of degrees. The high reflectivity of tens of degrees to 90 degrees utilizes the reflectivity of a high reflectivity metal, and an electrode configuration that obtains a high reflectivity at all incident angles is adopted. However, when laminating such dielectric optical multilayer films, the necessity of controlling the thickness of each film and the increase in process cost due to the large number of layers are problematic. Therefore, process stability is also a problem.

  Further, the light emission distribution from the light emitting layer has a higher distribution intensity in the range from several tens of degrees to 90 degrees than the incident angle is several tens of degrees. Therefore, higher reflectivity is desired in a region where the incident angle is large. In order to solve these problems, in the present invention, two transparent layers 15a, 15b; 25a, 25b; 35a, 35b; 45a, 45b having a refractive index lower than that of the growth substrate or the semiconductor layer are laminated. The structure employs a structure in which metal layers 16, 26, 36, and 46 made of a metal material having a high reflectance are laminated, and the process is simple and the cost can be reduced as described above.

  By using the light emitting diodes 1 to 4 as described above for the lighting device, it is possible to improve the light extraction efficiency, and thus it is possible to realize a lighting device that can achieve low power consumption and high luminance.

It is sectional drawing which shows the structure of the light emitting diode which is a semiconductor light emitting element concerning one Embodiment of this invention. It is sectional drawing which shows the structure of the light emitting diode which is a semiconductor light emitting element concerning one Embodiment of this invention. It is sectional drawing which shows the structure of the light emitting diode which is a semiconductor light emitting element concerning one Embodiment of this invention. It is sectional drawing which shows the structure of the light emitting diode which is a semiconductor light emitting element concerning one Embodiment of this invention. The reflectance with respect to the change of the thickness of the 1st and 2nd transparent layer in the case of using silver for the metal layer in the metal layer and the 1st and 2nd transparent layer which comprise the reflecting film in each said light emitting diode It is a graph which shows the change of. The second transparent layer in the case where the metal layer constituting the reflective film in each light emitting diode and the first and second transparent layers use silver for the metal layer and the thickness of the first transparent layer is fixed. It is a graph which shows the change of the reflectance with respect to the change of the thickness of a layer. It is a graph which shows the change of the reflectance, the transmittance | permeability, and the absorptivity with respect to the film thickness change of a silver reflecting film. It is a graph which expands and shows a partial field of Drawing 7. It is a graph for demonstrating the change of the light beam with respect to each output direction from a light emitting layer. It is a graph which shows the change of the light extraction efficiency with respect to the change of the reflectance of the said reflecting film. It is a graph which shows the change of the actual reflectance with respect to the incident angle change of the light to the reflecting film by a prior art. It is a figure for demonstrating an evanescent wave (near field). It is a graph for demonstrating the change with respect to the incident angle of the amount of light leaching by the said evanescent wave.

Explanation of symbols

1, 2, 3, 4 Light emitting diodes 11, 21, 31, 41 n-type semiconductor layers 12, 22, 32, 42 Light-emitting layers 13, 23, 33, 43 p-type semiconductor layers 14, 24, 34, 44 Light extraction surface 15a, 25a, 35a, 45a First transparent layers 15b, 25b, 35b, 45b Second transparent layers 15x, 25x; 19x, 29x Openings 16, 26, 36, 46 Metal layers 17, 27, 37, 47 n-type Electrodes 30 and 40 Growth substrate 30a Interface 38 Transparent conductive layers 39 and 49 P-type electrode

Claims (11)

An n-type semiconductor layer, the light-emitting layer, and the p-type semiconductor layer are stacked on a growth substrate that is transparent at the emission wavelength of the light-emitting layer, and is reflected on a surface opposite to the light extraction surface from the light-emitting layer. In a semiconductor light emitting device having a film,
The reflective film is
A first transparent layer having a refractive index lower than the refractive index of the growth substrate or semiconductor layer in contact with the reflective film at the emission wavelength, and having a thickness of 1/10 optical wavelength or more;
The first transparent layer is laminated on the first transparent layer and has a refractive index lower than that of the growth substrate or semiconductor layer and higher than that of the first transparent layer at the emission wavelength. A second transparent layer having a stress characteristic opposite to that of the first transparent layer and having a thickness several times that of the first transparent layer;
A semiconductor light emitting device comprising: a metal layer made of a metal material having a high reflectance and laminated on the second transparent layer. It said first transparent layer consists of SiO _2, the semiconductor light emitting device according to claim 1 wherein said second transparent layer, characterized in that it consists of ZrO _2. An n-type semiconductor layer, the light-emitting layer, and the p-type semiconductor layer are stacked on a growth substrate that is transparent at the emission wavelength of the light-emitting layer, and is reflected on a surface opposite to the light extraction surface from the light-emitting layer. In a semiconductor light emitting device having a film,
The reflective film is
A first transparent layer made of SiO ₂ having a refractive index lower than the refractive index of the growth substrate or semiconductor layer in contact with the reflective film at the emission wavelength, and having a thickness of about 30 nm of 1/10 optical wavelength or more ;
The first transparent layer is laminated on the first transparent layer and has a refractive index lower than that of the growth substrate or semiconductor layer and higher than that of the first transparent layer at the emission wavelength. and consists ZrO ₂ which have opposite stress characteristics, a second transparent layer having a substantially 5 times the thickness of the first transparent layer and,
Said second stacked on the transparent layer, the semi-conductor light emitting element is constituted by a metal layer made of a metal material you characterized Rukoto having high reflectivity.   In the case where the reflective film is formed on the semiconductor layer, the semiconductor layer and the first and second transparent layers are electrically conductive with the semiconductor layer and transparent at the emission wavelength. The first and second transparent layers are formed on the first electrode layer so that the first and second transparent layers have openings, and the metal layer is formed on the first and second transparent layers from the openings. The semiconductor light-emitting element according to claim 1, wherein the semiconductor light-emitting element is laminated to be electrically connected to the first electrode layer to form a second electrode layer.   5. The semiconductor light emitting device according to claim 4, wherein the first electrode layer is formed by laminating ITO with a thickness of 30 nm or less.   5. The semiconductor light emitting device according to claim 4, wherein the first electrode layer is formed of a highly reflective metal with little absorption and a thickness of 5 nm or less.   7. The semiconductor light emitting device according to claim 6, wherein the high reflectivity metal is silver, and the first electrode layer is formed to 2 nm or less.   When the reflective film is in contact with the semiconductor layer and the semiconductor layer is p-type, the first electrode layer is formed by stacking Pt, Rh, or an alloy thereof to approximately 2 nm or less and has an area occupation ratio of 50%. The semiconductor light-emitting element according to claim 4, wherein the semiconductor light-emitting element is formed in the following mesh shape or minute region group.   The semiconductor light emitting element according to claim 1, wherein the metal layer is silver or a silver alloy.   10. The semiconductor light emitting element according to claim 9, wherein the silver thickness of the metal layer is 80 nm or more.   An illumination device using the semiconductor light emitting element according to claim 1.

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