CN207542277U - Light emitting diode structure - Google Patents
Light emitting diode structure Download PDFInfo
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- CN207542277U CN207542277U CN201721694143.2U CN201721694143U CN207542277U CN 207542277 U CN207542277 U CN 207542277U CN 201721694143 U CN201721694143 U CN 201721694143U CN 207542277 U CN207542277 U CN 207542277U
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- 239000004065 semiconductor Substances 0.000 claims abstract description 104
- 238000010276 construction Methods 0.000 claims description 36
- 239000004020 conductor Substances 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 6
- 230000005611 electricity Effects 0.000 claims description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 16
- 238000000605 extraction Methods 0.000 description 15
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- 230000000694 effects Effects 0.000 description 11
- 239000000758 substrate Substances 0.000 description 8
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- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 7
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 5
- GVFOJDIFWSDNOY-UHFFFAOYSA-N antimony tin Chemical compound [Sn].[Sb] GVFOJDIFWSDNOY-UHFFFAOYSA-N 0.000 description 4
- 239000011651 chromium Substances 0.000 description 4
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- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
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- 239000013078 crystal Substances 0.000 description 3
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- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 3
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- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
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- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
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- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 2
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- AJNVQOSZGJRYEI-UHFFFAOYSA-N digallium;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[Ga+3].[Ga+3] AJNVQOSZGJRYEI-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910001195 gallium oxide Inorganic materials 0.000 description 2
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- 229910052682 stishovite Inorganic materials 0.000 description 2
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
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- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
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- 229910052725 zinc Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 240000001439 Opuntia Species 0.000 description 1
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- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
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- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
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- 230000001151 other effect Effects 0.000 description 1
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
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- 229910052711 selenium Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
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- Led Devices (AREA)
Abstract
A light emitting diode structure comprises a first semiconductor layer, a second semiconductor layer, a light emitting layer, an insulating layer and a light angle enlarging layer. The second semiconductor layer is positioned on the first semiconductor layer, and the light-emitting layer is positioned between the first semiconductor layer and the second semiconductor layer. The insulating layer is provided with a first part and a second part which are connected, the first part and the second part are respectively arranged on one side of the first semiconductor layer relative to the light-emitting layer and on the side surface of the first semiconductor layer, and the second part is in contact with the second semiconductor layer and the light-emitting layer. The light angle expansion layer is arranged on the second semiconductor layer, has a light outlet surface opposite to the second semiconductor layer and a light inlet surface facing the second semiconductor layer, and comprises a plurality of first dielectric layers and second dielectric layers which are stacked in a staggered manner, wherein the first dielectric layers and the second dielectric layers have different refractive indexes. The utility model discloses a light emitting diode structure makes the light-emitting angle of light emitting diode structure can enlarge through setting up light angle and enlarging the layer, therefore the use amount of reducible crystalline grain.
Description
Technical field
The utility model is about a kind of light emitting diode construction, especially with regard to a kind of shining with big light-emitting angle
Diode structure.
Background technology
Light emitting diode (Light Emitting Diode, LED) have it is light-weight, small, thickness is thin, save energy
And the characteristic of service life more other light source length.In addition, it can also be generated with the white of high color rendering matter by LED package
Light.Therefore, light emitting diode has been largely used to general illumination, while also gradually replaces the white light sources such as fluorescent lamp.
Generally a light emitting diode shines to be positive, i.e., light-emitting angle is positive and negative each 45 degree.Therefore, as panel or lamps and lanterns
And other items light source component when, it is necessary to use more number of die, thus lead to that the production cost increases.
Utility model content
In view of this, some embodiments of the utility model discloses a kind of light emitting diode construction, has larger beam angle,
Crystal grain usage amount can be reduced.
The one aspect example of the utility model discloses a kind of light emitting diode construction, is led comprising the first semiconductor layer, the second half
Body layer, luminescent layer, insulating layer and angular enlargement layer.Second semiconductor layer is located on the first semiconductor layer.Luminescent layer is located at
Between first semiconductor layer and the second semiconductor layer.There is insulating layer connected first part and second part, first part to set
Side of first semiconductor layer relative to luminescent layer is placed in, second part is set to the side surface of the first semiconductor layer and extends to
It is contacted with the second semiconductor layer and luminescent layer.Angular enlargement layer is set on the second semiconductor layer, angular enlargement layer with absolutely
Edge layer distinguishes position different two side of second semiconductor layer, and angular enlargement layer has the light extraction relative to the second semiconductor layer
Face and the incidence surface in face of the second semiconductor layer, wherein angular enlargement layer include multiple first dielectrics being staggeredly stacked
Layer and multiple second dielectric layers, these first dielectric layers and these second dielectric layers have different refractive index, wherein have compared with
The dielectric layer overall thickness of high refractive index is more than with the dielectric layer overall thickness compared with low-refraction.
According to some embodiments of the utility model, the thickness of angular enlargement layer is between 1 μm and 3 μm, and first
The overall thickness of the dielectric layer with high index has between 500nm between 2000nm in dielectric layer and the second dielectric layer
Compared with low-refraction dielectric layer overall thickness between 100nm between 1000nm and in each group of the first adjacent dielectric layer and
In two dielectric layers, the difference of the thickness of the thickness of the first dielectric layer and the second dielectric layer is not more than 500nm.
According to some embodiments of the utility model, via the beam angle that light-emitting surface is sent out between 130 degree and 175 degree it
Between.
According to some embodiments of the utility model, the thickness stack manner of angular enlargement layer is M types.
According to some embodiments of the utility model, the thickness stack manner of angular enlargement layer is U-shaped.
According to some embodiments of the utility model, the thickness stack manner of angular enlargement layer is V-type.
According to some embodiments of the utility model, also comprising first electrode and second electrode, first electrode is set to the
For semi-conductor layer relative to the side of luminescent layer, second electrode is set to the second semiconductor layer relative to the one of angular enlargement layer
Side.
According to some embodiments of the utility model, first electrode is contacted with the first part of insulating layer, second electrode with
Second semiconductor layer and insulating layer contact.
According to some embodiments of the utility model, insulating layer is by multiple third dielectric layers and the friendship of multiple 4th dielectric layers
Mistake stacks, these third dielectric layers have different refractive index from these the 4th dielectric layers.
According to some embodiments of the utility model, also comprising current-diffusion layer, it is set to first electrode and is led with the first half
Between body layer and between insulating layer and the first semiconductor layer.
Some above-mentioned embodiments of the utility model are by setting angular enlargement layer light emitting diode construction
Light-emitting angle expanded, thus the usage amount of crystal grain can be reduced.
Description of the drawings
Above and other purpose, feature, advantage and embodiment to allow this exposure can be clearer and more comprehensible, and appended attached drawing is said
It is bright as follows：
Figure 1A is painted the diagrammatic cross-section of light emitting diode construction in some embodiments of the utility model；
Figure 1B is painted the diagrammatic cross-section of angular enlargement layer in some embodiments of the utility model；
Fig. 1 C are painted the datagram of the light-emitting angle of light emitting diode construction and light extraction strength relationship in Figure 1A embodiments；
Fig. 2 is painted the light of various wavelength in some embodiments of the utility model in different light-emitting angles in Figure 1A embodiments
Reflectivity data figure under middle light emitting diode construction；
Fig. 3 A are painted the diagrammatic cross-section of light emitting diode construction in some embodiments of the utility model；
Fig. 3 B are painted the diagrammatic cross-section of insulating layer in some embodiments of the utility model.
Specific embodiment
Attached drawing appended by embodiment cooperation is set forth below is described in detail, but the embodiment provided is not to limit this
Disclose covered range, and the description of structure operation is non-to limit the sequence of its execution, it is any to be reconfigured by element
Structure, it is produced that there is equal and other effects device, it is all the range that this exposure is covered.In addition, attached drawing is only for the purpose of description,
And it maps not according to full size.To make to be easy to understand, similar elements or similar components will be with identical symbol marks in the description below
Show to illustrate.
In addition, in word (terms) used in full piece specification and claims, in addition to having and especially indicating, usually
With each word using in this area, at this disclose content in the usual meaning in special content.It is certain retouching
The word of this exposure is stated by lower or discuss in the other places of this specification, to provide those skilled in the art in this related exposure
Additional guiding in description.
About " first " used herein, " second " ... etc., not especially censure the meaning of order or cis-position, also
The non-element described with same technique term just for the sake of difference limiting the utility model or operation.
Secondly, used word "comprising" herein, " comprising ", " having ", " containing " etc., are open
Term, that is, mean including but not limited to.
Please refer to Fig.1 A to Fig. 1 C.Figure 1A is painted cuing open for light emitting diode construction 100 in an embodiment of the utility model
Face schematic diagram.The present embodiment discloses a kind of light emitting diode construction 100, includes the first semiconductor layer 110, the second semiconductor layer
120th, luminescent layer 130, insulating layer 140 and angular enlargement layer 150.Second semiconductor layer 120 is located at the first semiconductor layer 110
On.Luminescent layer 130 is between the first semiconductor layer 110 and the second semiconductor layer 120.
First semiconductor layer 110 and the second semiconductor layer 120 can be by comprising such as gallium (Ga), aluminium (Al), indium (In),
Phosphorus (P), nitrogen (Ta), zinc (Zn), cadmium (Cd), selenium (Se) semi-conducting material composition, but not limited to this.First semiconductor layer
110 and second semiconductor layer 120 generating electronics or hole when extra electric field biases.First semiconductor layer 110, the second half
Conductor layer 120 is respectively p-type semiconductor layer, n-type semiconductor layer.In an embodiment, the first semiconductor layer 110 is partly led for p-type
Body layer, the second semiconductor layer 120 are n-type semiconductor layer；Alternatively, in another embodiment, the first semiconductor layer 110 is N-shaped half
Conductor layer, the second semiconductor layer 120 are p-type semiconductor layer.
Luminescent layer 130 can generate the coloured light of one or more wavelength.The structure of luminescent layer 130 can be, for example, single heterojunction
Structure, double-heterostructure or multi-layer quantum well etc..
Insulating layer 140 has connected first part 142 and a second part 144, and first part 142 is set to the first half and leads
Relative to the side of luminescent layer 130, second part 144 is set to the side surface 112 of the first semiconductor layer 110 and prolongs body layer 110
It extends to and is contacted with the second semiconductor layer 120 and luminescent layer 130.In the present embodiment, the first part 142 of insulating layer 140 and
Two parts 144, which are connected, is presented L-type, but be not limited thereto in other embodiments.In the present embodiment, insulating layer 140 is two
Silica (SiO2, refractive index n=1.4585) layer, can be used as stopping electric current by barrier layer, but the composition of insulating layer 140 is simultaneously
It is not limited with silicon dioxide layer.In the other embodiments subsequently mentioned, insulating layer 140 can also arrange in pairs or groups specific composition material, make
It is in addition to blocking electric current is other than, the also effect with reflected light.
In addition, in some embodiments, metallic reflector can be also added on insulating layer 140, it is opposite to be set to insulating layer 140
In 130 side of the first semiconductor layer 110 and luminescent layer, for example, by aluminium (Al), titanium (Ti), chromium (Cr), nickel (Ni), platinum (Pt), tantalum
(Ta), the reflective metal layer that the alloy of golden (Au) or above-mentioned metal is formed, and be not limited.This metallic reflector can make absolutely
Edge layer 140 more effectively reflects the light generated by luminescent layer 130, so that light emitting diode construction 200 promotes light extraction yield.
Figure 1B is painted the diagrammatic cross-section of angular enlargement layer 150 in some embodiments of the utility model.Angular expands
Big layer 150 is set on the second semiconductor layer 120, and angular enlargement layer 150 is located at the second semiconductor layer respectively with insulating layer 140
120 different two sides, angular enlargement layer 150 have relative to the light-emitting surface 1502 of the second semiconductor layer 120 and in face of second
The incidence surface 1504 of semiconductor layer 120.By the light that luminescent layer 130 generates by the second semiconductor layer 120, by incidence surface 1504 into
Enter angular enlargement layer 150, then light emitting diode construction 100 is left to reach the effect of wide-angle light extraction via light-emitting surface 1502
Fruit；Or by reflection of the light that luminescent layer 130 generates via insulating layer 140 after, by the second semiconductor layer 120, by incidence surface
1504 enter angular enlargement layer 150, then leave light emitting diode construction 100 via light-emitting surface 1502 to reach wide-angle light extraction
Effect.
Angular enlargement layer 150 includes multiple first dielectric layers 152 being staggeredly stacked and multiple second dielectric layers 154, this
The refractive index of a little first dielectric layers 152 is more than the refractive index of these the second dielectric layers 154.For example, in the present embodiment,
One dielectric layer 152 can be titanium dioxide (TiO2, n=2.6142) and layer, the second dielectric layer 154 can be silica (SiO2, n
=1.4585) layer, but not limited to this.In other embodiments, the first dielectric layer 152 and the second dielectric layer depicted in Figure 1B
154 positions can be exchanged, and the dielectric layer number of plies in angular enlargement layer 150 also can be odd number, that is, light-emitting surface 1502 is with entering light
The dielectric layer in face 1504 is all the first dielectric layer 152 or is all the second dielectric layer 154.
The first dielectric layer 152 and the second dielectric layer 154 in angular enlargement layer 150 can be by for example, sputters
(sputtering), electron beam deposition (electron beam deposition), plasma-assisted chemical vapour deposition
(plasma enhanced chemical vapor deposition, PECVD) or ion assisted deposition (ion assisted
Deposition mode) is formed, and is not limited.
In other embodiments, the first dielectric layer 152 or the second dielectric layer 154 can be configured to according to practical application request
Silica (SiO2) layer, titanium dioxide (TiO2) layer, niobium oxide (Nb2O5) or silicon nitride (Si3N4) the dielectric layers staggered row such as layer
Row, and be not limited, as long as the first dielectric layer 152 meets from the second dielectric layer 154 respectively has different refractive index.
Specifically, in some embodiments of the utility model, the overall thickness of angular enlargement layer 150 is between 1 μm and 3
Between μm.The overall thickness of first dielectric layer 152 between 500nm between 2000nm, the overall thickness of the second dielectric layer 154 between
100nm is between 1000nm.It is right comprising the first dielectric layer of plural groups 152 and the second dielectric layer 154 in angular enlargement layer 150,
The difference of the thickness of the first dielectric layer 152 in each group and the thickness of the second dielectric layer 154 is not more than 500nm, and preferably
No more than 250nm, the effect of expanding beam angle can be reached.In embodiment shown in figure 1A, the first dielectric in each group
The difference of the thickness of layer 152 and the thickness of the second dielectric layer 154 is between 0.7nm between 170nm.Can by adjusting overall thickness and
The thickness of different first dielectric layers 152 of collocation and the second dielectric layer 154 is to reach different light-emitting angle and light extraction yield.Upper
It states in embodiment, to set the light-emitting angle of 16 layers of dielectric layer most wide.It is worth noting that, at least to have the first of 4 groups or more
152 and second dielectric layer 154 of dielectric layer it is combined into dielectric layer expand effect to just having apparent light-emitting angle.
In addition, the thickness stack manner of angular enlargement layer 150 is with " M types trend ", " U-shaped trend " and " reverse V-shaped trend "
Obtained light-emitting angle diffusion effect is preferred.Specifically, in angular enlargement layer 150, the first dielectric layer 152 and second
Dielectric layer 154 is staggeredly stacked, and the combination of each layer the first dielectric layer 152 and the second dielectric layer 154 is known as " one group "." M types become
Gesture " refers to the thickness per " one group " dielectric layer that the thickness of angular enlargement layer 150 is up stacked from the second semiconductor layer 120
Variation serves as reasons " thin " to " thickness " to " thin " to " thickness " again to " thin "；" U-shaped trend " refers to the thickness of angular enlargement layer 150 from
Two semiconductor layers 120 play the thickness change per " one group " dielectric layer up stacked and serve as reasons " thickness " to " thin " again to " thickness "；" V
Type trend " refers to every " one group " dielectric layer that the thickness of angular enlargement layer 150 is up stacked from the second semiconductor layer 120
Thickness change serves as reasons " thin " to " thickness " again to " thin ".
Fig. 1 C are painted the data of the light-emitting angle of light emitting diode construction 100 and light extraction strength relationship in Figure 1A embodiments
Figure.In the present embodiment, the overall thickness of angular enlargement layer 150 is 1 μm, includes 16 layers of staggered first dielectric layer 152
And second dielectric layer 154.First dielectric layer 152 and the second dielectric layer 154 are respectively titanium dioxide (TiO2) layer and silica
(SiO2) layer.By Fig. 1 C it is found that the range of beam angle, by being counted perpendicular to the direction of light-emitting surface 1502 as 0 degree, in positive-angle
More than 75 degree, negative angle is also more than 75 degree, and positive-angle and the summation of negative angle are more than 160 degree, and maximum is up to 175 degree.X in figure
Axis and Y-axis numerical value are that the luminous intensity that goes out projected from angular enlargement layer 150 toward light-emitting surface 1502 is originated relative at the beginning of luminescent layer 130
The ratio of luminous intensity.It is 100% that numerical value " 1 ", which represents ratio, and it is 20% that numerical value " 0.2 ", which represents ratio, and so on.Due to above-mentioned
The structure of first dielectric layer 152 and the second dielectric layer 154 enters the light of angular enlargement layer 150 in little Jiao from incidence surface 1504
It is easier to be totally reflected when spending, light-emitting surface 1502 shown in Fig. 1 C is caused to go out that light intensity ratio is smaller in low-angle, the light extraction of wide-angle
The phenomenon that intensity is larger.
The angular enlargement layer 150 being made up of the dielectric layer of above-mentioned different refractivity, the embodiment of the utility model
Light emitting diode construction 100 can be made by the beam angle that light-emitting surface 1502 is sent out between 130 degree and 175 degree, compared to known
90 degree of beam angles of LED are significantly expanded.This technique effect causes light emitting diode construction 100 that can reduce crystalline substance in practical application
The usage amount of grain, and then save cost and consume energy with reducing.
It refer again to Figure 1A.In some embodiments, light emitting diode construction 100 also includes first electrode 160 and second
Electrode 170, first electrode 160 are set to side of first semiconductor layer 110 relative to luminescent layer 130, to be led to the first half
Body layer 110 applies voltage.Second electrode 170 is set to side of second semiconductor layer 120 relative to angular enlargement layer 150,
To apply voltage to the second semiconductor layer 120.
First electrode 160 and second electrode 170 can be conductive materials, for example, titanium (Ti), copper (Cu), nickel (Ni), aluminium
(Al), golden (Au), silver-colored (Ag), tungsten (W) indium (In), tin (Sn), platinum (Pt), zinc (Zn), lead (Pb), palladium (Pd), germanium (Ge), cobalt
(Co), the conductive metal materials such as cadmium (Cd), manganese (Mn), antimony (Sb), bismuth (Bi), gallium (Ga), tungsten (W), beryllium (Be) or chromium (Cr), also
Can be tin indium oxide (indium tin oxide, ITO), indium zinc oxide (indium zinc oxide, IZO), zinc oxide
(zinc oxide, ZnO), indium oxide (indium oxide, InO), tin oxide (tin oxide, SnO), cadmium tin
(cadmium tin oxide, CTO), antimony tin (antimony-doped tin oxide, ATO), aluminum zinc oxide
(alumiun-doped zinc oxide, AZO), zinc-tin oxide (zinc tin oxide, ZTO), gallium oxide zinc (gallium
Zinc oxide, GZO) or the transparent conductive materials such as diamond-like carbon film (diamond like carbon, DLC).First electrode
160 and second electrode 170 can also be the conductive materials made of two or more material.First electrode 160 and
Two electrodes 170 can be with chemical vapor deposition (chemical vapor deposition, CVD), sputter, electron beam deposition,
Molecular beam epitaxy (molecular beam epitaxy, MBE) or other modes that can reach identical purpose are respectively arranged at
Semi-conductor layer 110 is relative to the side and the second semiconductor layer 120 of luminescent layer 130 relative to angular enlargement layer 150
Side.
In some embodiments, first electrode 160 is contacted with the first part 142 of insulating layer 140, second electrode 170 with
The second part 144 of second semiconductor layer 120 and insulating layer 140 contacts.Under this arrangement, insulating layer 140 can make the first half to lead
Body layer 110 avoids exposed in the side relative to luminescent layer 130 and 112 direction of side surface.In addition, insulating layer 140 can also make to work as
While 170 and second semiconductor layer 120 of second electrode is electrically connected and applies voltage to the second semiconductor layer 120, the second electricity
Pole 170 will not generate electric connection with the first semiconductor layer 110 and luminescent layer 130, achieve the effect that stop electric current.
Fig. 2 is painted the light of various wavelength in some embodiments of the utility model in different light-emitting angles in Figure 1A embodiments
Reflectivity data figure under middle light emitting diode construction 100.For data with angle from 5 to 65 degree, every 10 degree are the modes being spaced
Reflectance curve is drawn, that is, 10 degree to 130 degree of range is added up to comprising beam angle positive direction and negative direction.It is signified herein
Angle be using vertical 1502 direction of light-emitting surface as 0 degree as benchmark, therefore positive 90 degree and minus 90 degree all refer to parallel light-emitting surface
1502 direction.5 degree of data are represented with label 5,15 degree of data are represented with label 15, and so on, 25,35,45,55 and
65 degree of data are represented respectively with label 25,35,45,55 and 65.From the point of view of wide-angle, such as 65 degree of data, before this in wave
The high reflectance having at 350nm close to 90% is about, it is very few to represent the light of the wavelength about 370nm light extraction at 65 degree.65 degree of number
According to the increase of wavelength, having 50% reflectivity about at 400nm, and about more than 410nm wavelength reflection all about
Less than 35%, represent about more than 410nm wavelength light at 65 degree still have it is notable and it is applicable go out luminous intensity.With regard to small angle
Degree, such as from the point of view of 5 degree of data, the high reflectance for having about 92.5% at wavelength about 450nm before this represents wavelength about 450nm's
Light light extraction at 5 degree is very few.5 degree of data have about 50% reflectivity with the increase of wavelength about at 500nm, and
The wavelength reflection of about more than 505nm is all less than about 35%, and the light of the wavelength of representative about more than 505nm still has at 5 degree to be shown
Write and it is applicable go out luminous intensity.According to above-mentioned analysis method, in order to obtain wide-angle light extraction and avoid low angle light extraction,
It can find to be about 410nm to the range of about 505nm in light wave, that is, about in the range of blue light to about green light, even in light extraction
Angle positive direction and negative direction add up to 130 degree of wide-angle, still with it is notable and it is applicable go out luminous intensity.
Please refer to Fig.3 A to Fig. 3 B.Fig. 3 A are painted light emitting diode construction 200 in some embodiments of the utility model
Diagrammatic cross-section.Fig. 3 B are painted the diagrammatic cross-section of insulating layer 240 in some embodiments of the utility model.Depicted in Figure 1A
Embodiment it is similar, the light emitting diode constructions 200 of some embodiments described herein includes the first semiconductor layer 210, the
Two semiconductor layers 220, luminescent layer 230, insulating layer 240 and angular enlargement layer 250.Second semiconductor layer 220 is located at first
On semiconductor layer 210.Luminescent layer 230 is between the first semiconductor layer 210 and the second semiconductor layer 220.Light emitting diode knot
Structure 200 more may include first electrode 260 and second electrode 270, first electrode 260 be set to the first semiconductor layer 210 relative to
The side of luminescent layer 230, to apply voltage to the first semiconductor layer 210.Second electrode 270 is set to the second semiconductor layer
220 relative to angular enlargement layer 250 side, to the second semiconductor layer 220 apply voltage.Angular enlargement layer 250
It is set on the second semiconductor layer 220, it is different that angular enlargement layer 250 is located at the second semiconductor layer 220 with insulating layer 240 respectively
Two sides, angular enlargement layer 250 have relative to the light-emitting surface 2502 of the second semiconductor layer 220 and in face of the second semiconductor
The incidence surface 2504 of layer 220.
Embodiment difference depicted in embodiment and Figure 1A depicted in Fig. 3 A is in in the embodiment depicted in Fig. 3 A
In, insulating layer 240 is staggeredly stacked by multiple third dielectric layers 242 and multiple 4th dielectric layers 244, these third dielectrics
Layer 242 has different refractive index from these the 4th dielectric layers 244.The processing procedure of 242 and the 4th dielectric layer 244 of third dielectric layer with
Material can just repeat no more herein as described in the first dielectric layer 152 and the second dielectric layer 154.
Therefore, in the above-described embodiments, insulating layer 240 can be used as stop electric current by barrier layer and reflection by shining
The light that layer 230 generates and the light reflected from angular enlargement layer 250.In this, the third dielectric layer 242 that is staggeredly stacked
And the 4th dielectric layer 244 with more the effect for increasing light reflectivity, thus compare the light extraction yield of light emitting diode construction 200
In individual layer silica (SiO2) insulating layer 140 that is formed more promoted.Insulating layer 240 is more than 6 layers of dielectric layer, also
The i.e. 3 pairs dielectric layers being made of third dielectric layer 242, the 4th dielectric layer 244 are to more than, and when overall thickness is below 3 μm can
Promote reflecting effect.
In some embodiments of the utility model, light emitting diode construction 100,200 may include current-diffusion layer 180,
280, it is set between first electrode 160,260 and the first semiconductor layer 110,210 and insulating layer 140,240 is led with the first half
Between body layer 110,210 and connect first electrode 160,260 and insulating layer 140,240.Pass through current-diffusion layer 180,280
Setting, can make extra electric field bias more uniformly add in the first semiconductor layer 110,210.
Current-diffusion layer 180,280 can be, for example, tin indium oxide (ITO) layer, nickel gold (Ni/Au) layer, indium zinc oxide
(indium zinc oxide, IZO) layer, zinc oxide (zinc oxide, ZnO) layer, indium oxide (InO) layer, tin oxide (SnO)
Layer, cadmium tin (CTO) layer, antimony tin (ATO) layer, aluminum zinc oxide (AZO) layer, zinc-tin oxide (ZTO) layer or gallium oxide zinc
(GZO) conductive layers such as layer, and be not limited.
In some embodiments of the utility model, growth substrate 190,290 can be also included, positioned at the second semiconductor layer
120th, between 220 and angular enlargement layer 150,250.Growth substrate 190,290 for grow up light emitting diode construction 100,
200.Specifically, can grow up angular enlargement layer 150,250 in the side of growth substrate 190,290, and in growth substrate
190th, 290 opposite side grow up the second semiconductor layer 120,220 and it is other as shown in Figure 1A, Fig. 3 A with the second semiconductor layer 120,
220 relative to growth substrate 190,290 homonymies structure.The material of substrate 190,290 can be sapphire (sapphire,
Al2O3), silicon semiconductor substrate, aluminium nitride (AlN), silicon carbide (SiC) or gallium nitride (GaN), and be not limited.It completes to shine
After the growth of diode structure 100,200, it can remove or retain growth substrate 190,290.
In conclusion the light emitting diode construction disclosed by some embodiments of the utility model is by setting angular to expand
Big layer causes the light-emitting angle expanded of light emitting diode construction, thus can reduce the usage amount of crystal grain.In addition, multilayer dielectric
The insulating layer that layer is formed also increases light extraction yield, achievees the effect that save the energy.
Although the utility model is disclosed above with embodiment, so it is not limited to the utility model, any ripe
This those skilled in the art is known, without departing from the spirit and scope of the utility model, when can be used for a variety of modifications and variations, therefore this practicality
Novel protection domain is when subject to the scope of which is defined in the appended claims.
Claims (10)
1. a kind of light emitting diode construction, which is characterized in that include：
One first semiconductor layer；
One second semiconductor layer, on first semiconductor layer；
One luminescent layer, between first semiconductor layer and second semiconductor layer；
There is one insulating layer a connected first part and a second part, the first part to be set to first semiconductor layer
Relative to the side of the luminescent layer, the second part be set to the side surface of first semiconductor layer and extend to this second half
Conductor layer and luminescent layer contact；
One angular enlargement layer is set on second semiconductor layer, which is located at respectively with the insulating layer should
Different two side of second semiconductor layer, the angular enlargement layer have relative to a light-emitting surface of second semiconductor layer and face
To an incidence surface of second semiconductor layer, wherein the angular enlargement layer includes multiple first dielectric layers for being staggeredly stacked and more
A second dielectric layer, the refractive index of the multiple first dielectric layer are more than the refractive index of the multiple second dielectric layer, wherein institute
The overall thickness for stating multiple first dielectric layers is more than the overall thickness of the multiple second dielectric layer.
2. light emitting diode construction according to claim 1, which is characterized in that the thickness of the angular enlargement layer is between 1 μ
Between m and 3 μm, the overall thickness of the multiple first dielectric layer between 500nm between 2000nm, the multiple second dielectric layer
Overall thickness between 100nm between 1000nm, should and in each group of adjacent first dielectric layer and second dielectric layer
The thickness of first dielectric layer and the difference of the thickness of second dielectric layer are not more than 500nm.
3. light emitting diode construction according to claim 1, which is characterized in that be situated between via the beam angle that the light-emitting surface is sent out
Between 130 degree and 175 degree.
4. light emitting diode construction according to claim 1, which is characterized in that the thickness stacking side of the angular enlargement layer
Formula is M types.
5. light emitting diode construction according to claim 1, which is characterized in that the thickness stacking side of the angular enlargement layer
Formula is U-shaped.
6. light emitting diode construction according to claim 1, which is characterized in that the thickness stacking side of the angular enlargement layer
Formula is reverse V-shaped.
7. light emitting diode construction according to claim 1, which is characterized in that also comprising a first electrode and one second electricity
Pole, the first electrode are set to side of first semiconductor layer relative to luminescent layer, the second electrode be set to this second half
Conductor layer relative to angular enlargement layer side.
8. light emitting diode construction according to claim 7, which is characterized in that the first electrode and the insulating layer this
Part contact, the second electrode are contacted with second semiconductor layer and the insulating layer.
9. light emitting diode construction according to claim 1, which is characterized in that the insulating layer is by multiple third dielectric layers
And multiple 4th dielectric layers are staggeredly stacked, the multiple third dielectric layer has different from the multiple 4th dielectric layer
Refractive index.
10. light emitting diode construction according to claim 7, which is characterized in that also comprising a current-diffusion layer, be set to
Between the first electrode and first semiconductor layer and between the insulating layer and first semiconductor layer.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW106215261U TWM563665U (en) | 2017-10-17 | 2017-10-17 | Light emitting diode structure |
| TW106215261 | 2017-10-17 |
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|---|---|
| CN207542277U true CN207542277U (en) | 2018-06-26 |
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| CN (1) | CN207542277U (en) |
| TW (1) | TWM563665U (en) |
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