JP2009094107A - ELECTRODE FOR GaN-BASED LED DEVICE AND GaN-BASED LED DEVICE USING THE SAME - Google Patents

ELECTRODE FOR GaN-BASED LED DEVICE AND GaN-BASED LED DEVICE USING THE SAME Download PDF

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JP2009094107A
JP2009094107A JP2007260318A JP2007260318A JP2009094107A JP 2009094107 A JP2009094107 A JP 2009094107A JP 2007260318 A JP2007260318 A JP 2007260318A JP 2007260318 A JP2007260318 A JP 2007260318A JP 2009094107 A JP2009094107 A JP 2009094107A
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tco film
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Hiroaki Okagawa
広明 岡川
Susumu Hiraoka
晋 平岡
Takahide Shiroichi
隆秀 城市
Toshihiko Shima
敏彦 嶋
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Mitsubishi Chemical Corp
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<P>PROBLEM TO BE SOLVED: To provide a GaN-based LED device wherein a transparent electrode is made of a TCO film with micro unevenness on its front surface and the optical reflectivity on the rear surface of a metal film for bonding pads can be also prevented from being degraded. <P>SOLUTION: An electrode for a GaN-based LED device is comprised of a transparent electrode 13 which is formed in contact with the surface of a GaN-based semiconductor film 12 and a metal film 14 which is formed as a bonding pad in a part on the transparent electrode 13. The transparent electrode 13 is made of a first TCO film 13a and a second TCO film 13b which are electrically connected with each other, and both the first TCO film 13a and the second TCO film 13b are exposed over the surface of the transparent electrode 13. The surface of the first TCO film 13a is smoother than that of the second TCO film 13b, and the metal film 14 is formed on the surface of the first TCO film 13a. <P>COPYRIGHT: (C)2009,JPO&INPIT

Description

本発明は、ＧａＮ系ＬＥＤ素子用の電極、および、それを用いたＧａＮ系ＬＥＤ素子に関する。   The present invention relates to an electrode for a GaN-based LED element, and a GaN-based LED element using the same.

ＧａＮ系半導体は、化学式ＡｌａＩｎｂＧａ１−ａ−ｂＮ（０≦ａ≦１、０≦ｂ≦１、０≦ａ＋ｂ≦１）で表される化合物半導体であり、３族窒化物半導体、窒化物系半導体などとも呼ばれる。ｐｎ接合構造、ダブルヘテロ構造、量子井戸構造などの発光素子構造をＧａＮ系半導体で形成してなるＧａＮ系ＬＥＤ素子は、緑色〜近紫外の光を発生することが可能であり、これまで、信号機やディスプレイ装置等の用途で実用化されている。 A GaN-based semiconductor is a compound semiconductor represented by the chemical formula Al a In b Ga 1-ab N (0 ≦ a ≦ 1, 0 ≦ b ≦ 1, 0 ≦ a + b ≦ 1), and is a group III nitride semiconductor. Also called a nitride-based semiconductor. A GaN-based LED element in which a light-emitting element structure such as a pn junction structure, a double hetero structure, or a quantum well structure is formed of a GaN-based semiconductor can generate green to near-ultraviolet light. It is put to practical use in applications such as display devices.

最近、ＧａＮ系ＬＥＤ素子において、ＴＣＯ膜が透明電極として用いられるようになっている。ＴＣＯとは透明導電性酸化物（Transparent Conductive Oxide）のことであり、典型的には、ＩＴＯ（インジウム錫酸化物）、酸化インジウム、酸化錫、ＩＺＯ（インジウム亜鉛酸化物）、ＡＺＯ（アルミニウム亜鉛酸化物）、酸化亜鉛、ＦＴＯ（フッ素ドープ酸化錫）が例示される。ＴＣＯの中でも、汎用されているのはＩＴＯである。ＩＴＯ膜は、通常、その表面に多結晶構造に由来する微細な凹凸を有しているために、ＩＴＯ膜を透明電極に用いたＧａＮ系ＬＥＤ素子は出力の高いものとなる。なぜなら、この微細な凹凸の存在によって、素子の内側から透明電極の表面に入射する光の全反射が抑制されるために、素子内部で生じた光が透明電極の表面を通して素子外部に効率的に取り出されるからである。   Recently, TCO films have been used as transparent electrodes in GaN-based LED elements. TCO is a transparent conductive oxide, typically ITO (indium tin oxide), indium oxide, tin oxide, IZO (indium zinc oxide), AZO (aluminum zinc oxide). Material), zinc oxide, and FTO (fluorine-doped tin oxide). Among TCOs, ITO is widely used. Since an ITO film usually has fine irregularities derived from a polycrystalline structure on its surface, a GaN-based LED element using the ITO film as a transparent electrode has a high output. This is because the presence of the fine irregularities suppresses total reflection of light incident on the surface of the transparent electrode from the inside of the element, so that the light generated inside the element can be efficiently transmitted to the outside of the element through the surface of the transparent electrode. It is because it is taken out.

図１０に、ＴＣＯ膜を透明電極に用いた、従来のＧａＮ系ＬＥＤ素子の断面構造を示す。このＧａＮ系ＬＥＤ素子は、サファイアからなる基板１０１と、その上に形成されたＧａＮ系半導体膜１０２とを有している。ＧａＮ系半導体膜１０２中には、Ｓｉ添加ＧａＮからなるｎ型層１０２−１と、Ｍｇ添加ＡｌＧａＮからなるｐ型層１０２−３と、これらの間に挟まれた、ＩｎＧａＮ井戸層とＧａＮ障壁層とからなる多重量子井戸構造の発光層１０２−２とが含まれている。ＧａＮ系半導体膜１０２上には、２つの電極が、同一面側に形成されている。ひとつは、ｐ型層１０２−３上に形成されたｐ電極であり、ＴＣＯ膜１０３ａとＴＣＯ膜１０３ｂとからなる透明電極と、この透明電極の一部上にボンディングパッドとして形成されたメタル膜１０４と、から構成されている。ＴＣＯ膜１０３ｂはｐ型層１０２−３の上面を略全面的に覆っており、ＴＣＯ膜１０３ａはＴＣＯ膜１０３ｂ上の一部に形成されている。メタル膜１０４はＴＣＯ膜１０３ａの上に形成されている。もうひとつの電極は、ｎ型層１０２−１上に形成されたｎ電極であり、ｎ型層１０２−１上に接するＴＣＯ膜１０５と、その上に積層されたメタル膜１０６とから構成されている。   FIG. 10 shows a cross-sectional structure of a conventional GaN-based LED element using a TCO film as a transparent electrode. This GaN-based LED element has a substrate 101 made of sapphire and a GaN-based semiconductor film 102 formed thereon. In the GaN-based semiconductor film 102, an n-type layer 102-1 made of Si-doped GaN, a p-type layer 102-3 made of Mg-doped AlGaN, and an InGaN well layer and a GaN barrier layer sandwiched therebetween. And a light emitting layer 102-2 having a multiple quantum well structure. On the GaN-based semiconductor film 102, two electrodes are formed on the same surface side. One is a p-electrode formed on the p-type layer 102-3, a transparent electrode composed of the TCO film 103a and the TCO film 103b, and a metal film 104 formed as a bonding pad on a part of the transparent electrode. And is composed of. The TCO film 103b covers substantially the entire upper surface of the p-type layer 102-3, and the TCO film 103a is formed on a part of the TCO film 103b. The metal film 104 is formed on the TCO film 103a. The other electrode is an n-electrode formed on the n-type layer 102-1, and is composed of a TCO film 105 in contact with the n-type layer 102-1, and a metal film 106 laminated thereon. Yes.

ＴＣＯ膜を透明電極に用いたＧａＮ系ＬＥＤ素子において、透明電極の表面にボンディングパッドとして設けるメタル膜の、裏面（透明電極に接する面）の光反射性を高くすることが、高出力化のために好ましいことが知られている（特許文献１）。
特開２００５−３１７９３１号公報 特開２００２−２５３４９号公報 ジャパニーズ・ジャーナル・オブ・アプライド・フィジクス，第４４巻，第４Ｂ号，２００５年，第２５２５〜２５２７頁（Ｊａｐａｎｅｓｅ Ｊｏｕｒｎａｌ ｏｆ Ａｐｐｌｉｅｄ Ｐｈｙｓｉｃｓ，Ｖｏｌ．４４，Ｎｏ．４Ｂ，２００５，ｐｐ．２５２５−２５２７） In a GaN-based LED element using a TCO film as a transparent electrode, the metal film provided as a bonding pad on the surface of the transparent electrode has a high light reflectivity on the back surface (the surface in contact with the transparent electrode). (Patent Document 1).
JP 2005-317931 A JP 2002-25349 A Japanese Journal of Applied Physics, Vol. 44, No. 4B, 2005, 2525-2527 (Japan Journal of Applied Physics, Vol. 44, No. 4B, 2005, pp. 2525-2527).

前述のごとく、ＩＴＯ膜のような、表面に微細な凹凸を有するＴＣＯ膜は、ＧａＮ系ＬＥＤ素子の出力を向上させる効果を有する。しかし、かかるＴＣＯ膜の表面に形成したメタル膜は、裏面の反射性が劣ったものとなる。なぜなら、この裏面はＴＣＯ膜の表面形状を反映して、平滑性の低いものとなるためである。
そこで、本発明は、表面に微細な凹凸を有するＴＣＯ膜で透明電極を形成しながらも、ボンディングパッド用のメタル膜の裏面の光反射性の低下が防止された、ＧａＮ系ＬＥＤ素子用の電極を提供することを、主な目的とする。 As described above, a TCO film having fine irregularities on the surface, such as an ITO film, has an effect of improving the output of the GaN-based LED element. However, the metal film formed on the surface of the TCO film is inferior in reflectivity on the back surface. This is because the back surface reflects the surface shape of the TCO film and has low smoothness.
Accordingly, the present invention provides an electrode for a GaN-based LED element in which a light reflection on the back surface of a metal film for a bonding pad is prevented from being lowered while forming a transparent electrode with a TCO film having fine irregularities on the surface. The main purpose is to provide

本発明は、次の特徴を有するＧａＮ系ＬＥＤ素子用の電極を提供するものである：
ＧａＮ系半導体膜の表面に接して形成された透明電極と、該透明電極上の一部にボンディングパッドとして形成されたメタル膜と、からなり、前記透明電極は、互いに電気的に接続された第１のＴＣＯ膜と第２のＴＣＯ膜とからなっており、該第１のＴＣＯ膜および第２のＴＣＯ膜は、その両方が該透明電極の表面に露出しており、該第１のＴＣＯ膜の表面は該第２のＴＣＯ膜の表面よりも平滑であり、前記メタル膜は該第１のＴＣＯ膜の表面に形成されている、ことを特徴とするＧａＮ系ＬＥＤ素子用の電極。 The present invention provides an electrode for a GaN-based LED device having the following characteristics:
A transparent electrode formed in contact with the surface of the GaN-based semiconductor film; and a metal film formed as a bonding pad on a part of the transparent electrode, wherein the transparent electrodes are electrically connected to each other. 1 TCO film and a second TCO film, both of the first TCO film and the second TCO film are exposed on the surface of the transparent electrode, and the first TCO film An electrode for a GaN-based LED element, wherein the surface of the GaN-based LED element is smoother than the surface of the second TCO film, and the metal film is formed on the surface of the first TCO film.

本発明が提供する上記のＧａＮ系ＬＥＤ素子用の電極では、ＧａＮ系半導体膜の表面に形成する透明電極を、相対的に高い表面平滑性を有する第１のＴＣＯ膜と、相対的に低い表面平滑性を有する第２のＴＣＯ膜とから構成するとともに、ボンディングパッド用のメタル膜を、第２のＴＣＯ膜の表面に形成しないで、第１のＴＣＯ膜の表面のみに形成している。そのために、このメタル膜の裏面の平滑性の低下が防止され、ひいては、このメタル膜の裏面の光反射性の低下が防止される。また、素子内部からこの透明電極の表面に入射する光は、表面平滑性が相対的に低い第２のＴＣＯ膜の表面から、メタル膜に遮られることなく、効率よく素子外部に出て行くことができる。   In the electrode for a GaN-based LED element provided by the present invention, the transparent electrode formed on the surface of the GaN-based semiconductor film is composed of a first TCO film having a relatively high surface smoothness and a relatively low surface. A second TCO film having smoothness is formed, and a metal film for bonding pads is not formed on the surface of the second TCO film, but only on the surface of the first TCO film. For this reason, the smoothness of the back surface of the metal film is prevented from being lowered, and consequently the light reflectivity of the back surface of the metal film is prevented from being lowered. In addition, light incident on the surface of the transparent electrode from the inside of the element efficiently goes out of the element from the surface of the second TCO film having relatively low surface smoothness without being blocked by the metal film. Can do.

本発明が提供するＧａＮ系ＬＥＤ素子用の電極を用いたＧａＮ系ＬＥＤ素子は、発光出力に優れたものとなるので、照明用途をはじめとする、高出力が要求される用途において、好適に用いることができる。   Since the GaN-based LED element using the electrode for the GaN-based LED element provided by the present invention has excellent light emission output, it is suitably used in applications that require high output such as lighting applications. be able to.

（第１の実施形態）
図１は、本発明の電極を用いたＧａＮ系ＬＥＤ素子の一構造例を示す断面図である。このＧａＮ系ＬＥＤ素子は、サファイアからなる基板１１と、その上に形成されたＧａＮ系半導体膜１２とを有している。ＧａＮ系半導体膜１２中には、Ｓｉ添加ＧａＮからなるｎ型層１２−１と、Ｍｇ添加ＡｌＧａＮからなるｐ型層１２−３と、これらの間に挟まれた、ＩｎＧａＮ井戸層とＧａＮ障壁層とからなる多重量子井戸構造の発光層１２−２とが含まれている。ＧａＮ系半導体膜１２上には、２つの電極が、同一面側に形成されている。そのひとつは、ｐ型層１２−３上に形成されたｐ電極であり、ＴＣＯ膜１３ａ（「第１のＴＣＯ膜」）とＴＣＯ膜１３ｂ（「第２のＴＣＯ膜」）とからなる透明電極１３を有している。ｐ電極は、更に、透明電極１３の一部上にボンディングパッドとして形成されたメタル膜１４を有している。第２のＴＣＯ膜１３ｂはｐ型層１２−３の上面を略全面的に覆っており、第１のＴＣＯ膜１３ａはＴＣＯ膜１３ｂの一部上に形成されている。メタル膜１４は第１のＴＣＯ膜１３ａの表面に形成されている。第１のＴＣＯ膜１３ａと第２のＴＣＯ膜１３ｂは、ともに透明電極の表面に露出しているが、第１のＴＣＯ膜１３ａの露出面Ｓ１３ａ（メタル膜１４により覆われている）は、第２のＴＣＯ膜１３ｂの露出面Ｓ１３ｂよりも高い平滑性を有している。もうひとつの電極は、ｎ型層１２−１上に形成されたｎ電極であり、ｎ型層１２−１に接するＴＣＯ膜１５と、その上に積層されたメタル膜１６とから構成されている。 (First embodiment)
FIG. 1 is a cross-sectional view showing one structural example of a GaN-based LED element using the electrode of the present invention. This GaN-based LED element has a substrate 11 made of sapphire and a GaN-based semiconductor film 12 formed thereon. In the GaN-based semiconductor film 12, an n-type layer 12-1 made of Si-doped GaN, a p-type layer 12-3 made of Mg-doped AlGaN, and an InGaN well layer and a GaN barrier layer sandwiched therebetween. And a light emitting layer 12-2 having a multiple quantum well structure. On the GaN-based semiconductor film 12, two electrodes are formed on the same surface side. One of them is a p-electrode formed on the p-type layer 12-3, and is a transparent electrode comprising a TCO film 13a ("first TCO film") and a TCO film 13b ("second TCO film"). 13. The p-electrode further has a metal film 14 formed as a bonding pad on a part of the transparent electrode 13. The second TCO film 13b substantially entirely covers the upper surface of the p-type layer 12-3, and the first TCO film 13a is formed on a part of the TCO film 13b. The metal film 14 is formed on the surface of the first TCO film 13a. Both the first TCO film 13a and the second TCO film 13b are exposed on the surface of the transparent electrode, but the exposed surface S13a (covered by the metal film 14) of the first TCO film 13a is 2 has higher smoothness than the exposed surface S13b of the TCO film 13b. The other electrode is an n-electrode formed on the n-type layer 12-1, and is composed of a TCO film 15 in contact with the n-type layer 12-1 and a metal film 16 laminated thereon. .

図１に示すＧａＮ系ＬＥＤ素子は、例えば、次の方法により製造することができる。
まず、ＭＯＶＰＥ法を用いて、直径２インチのサファイア基板１１上に、バッファ層（図示せず）、ｎ型層１２−１、発光層１２−２、ｐ型層１２−３を順次形成して積層し、図２に断面図を示すエピウェハを作製する。 The GaN-based LED element shown in FIG. 1 can be manufactured, for example, by the following method.
First, a buffer layer (not shown), an n-type layer 12-1, a light emitting layer 12-2, and a p-type layer 12-3 are sequentially formed on a sapphire substrate 11 having a diameter of 2 inches by using the MOVPE method. Then, an epitaxial wafer whose cross section is shown in FIG. 2 is manufactured.

次に、図３に示すように、半導体ウェハのｐ型層１２−３の上面に、電子ビーム蒸着法を用いて、ＩＴＯからなる第２のＴＣＯ膜１３ｂを形成する。この第２のＴＣＯ膜１３ｂの表面には、多結晶構造に基づく凹凸が自発的に形成される。   Next, as shown in FIG. 3, a second TCO film 13b made of ITO is formed on the upper surface of the p-type layer 12-3 of the semiconductor wafer by using an electron beam evaporation method. Irregularities based on the polycrystalline structure are spontaneously formed on the surface of the second TCO film 13b.

次に、フォトリソグラフィ技法を用いて、図４に示すように、第２のＴＣＯ膜１３ｂを所定の形状にパターニングする。   Next, as shown in FIG. 4, the second TCO film 13b is patterned into a predetermined shape by using a photolithography technique.

次に、ＲＩＥ（反応性イオンエッチング）によりｐ型層１２−３および発光層１２−２の一部を除去し、図５に示すようにｎ型層１２−１を部分的に露出させる。   Next, part of the p-type layer 12-3 and the light emitting layer 12-2 is removed by RIE (reactive ion etching), and the n-type layer 12-1 is partially exposed as shown in FIG.

次に、第２のＴＣＯ膜１３ｂ上およびｎ型層１２−１の露出面上の所定の位置に、所定形状の開口部を設けたリフトオフ用のマスクを形成したうえで、スパッタリング法を用いて、第１のＴＣＯ膜１３ａおよびＴＣＯ膜１５となるＩＴＯ膜の形成を行なう。更に、続けて、このＩＴＯ膜上にメタル膜の形成を行なう。メタル膜の形成後、マスクをリフトオフすると、図６に示すように、第２のＴＣＯ膜１３ｂ上に、第１のＴＣＯ膜１３ａとメタル膜１４とからなる積層膜が、また、ｎ型層１２−１の露出面上に、ＴＣＯ膜１５およびメタル膜１６とからなる積層膜（ｎ電極）が形成された構造が得られる。リフトオフ法を用いることにより、各積層膜に含まれるＴＣＯ膜およびメタル膜の平面形状およびサイズは同一となる。   Next, a lift-off mask having an opening of a predetermined shape is formed at a predetermined position on the second TCO film 13b and the exposed surface of the n-type layer 12-1, and then a sputtering method is used. Then, an ITO film to be the first TCO film 13a and the TCO film 15 is formed. Subsequently, a metal film is formed on the ITO film. When the mask is lifted off after the formation of the metal film, as shown in FIG. 6, a laminated film composed of the first TCO film 13 a and the metal film 14 is formed on the second TCO film 13 b and the n-type layer 12. A structure in which a laminated film (n electrode) composed of the TCO film 15 and the metal film 16 is formed on the exposed surface of −1 is obtained. By using the lift-off method, the planar shape and size of the TCO film and metal film included in each laminated film are the same.

ここで、第２のＴＣＯ膜１３ｂの成膜法として電子ビーム蒸着法を用いるのに対し、第１のＴＣＯ膜１３ａの成膜法としてスパッタリング法を用いる理由は、ＩＴＯ膜の場合、電子ビーム蒸着法により成膜したものよりも、スパッタリング法により成膜したものの方が、表面が平滑となるからである（特許文献２）。   Here, the reason why the sputtering method is used as the film formation method of the first TCO film 13a while the electron beam evaporation method is used as the film formation method of the second TCO film 13b is that in the case of the ITO film, the electron beam evaporation method is used. This is because the surface formed by the sputtering method is smoother than the film formed by the sputtering method (Patent Document 2).

ｐ電極およびｎ電極の形成が完了したら、この分野で通常用いられている方法を用いて、ウェハ上に形成されたＧａＮ系ＬＥＤ素子を切り離し、チップ化する。なお、ウェハを切断する前に、ＧａＮ系半導体膜１２およびＴＣＯ膜１３ｂが露出した部分を、酸化ケイ素などの金属酸化物からなる透明な絶縁保護膜で被覆してもよい。   When the formation of the p-electrode and the n-electrode is completed, the GaN-based LED element formed on the wafer is separated into chips using a method usually used in this field. Note that before the wafer is cut, the exposed portions of the GaN-based semiconductor film 12 and the TCO film 13b may be covered with a transparent insulating protective film made of a metal oxide such as silicon oxide.

以上、図１に示すＧａＮ系ＬＥＤ素子の製造方法の一例を説明したが、このＬＥＤ素子の製造方法は上記説明した方法に限定されるものではない。   As mentioned above, although an example of the manufacturing method of the GaN-type LED element shown in FIG. 1 was demonstrated, the manufacturing method of this LED element is not limited to the method demonstrated above.

第２のＴＣＯ膜１３ｂよりも第１のＴＣＯ膜１３ａの表面平滑性を高くするために、第２のＴＣＯ膜を多結晶質膜とし、第１のＴＣＯ膜を非晶質膜としてもよい。非晶質膜となり易いＴＣＯ膜としては、ＩＺＯ（インジウム亜鉛酸化物）膜が挙げられる。ＩＺＯ膜の好ましい形成方法はスパッタリングである。   In order to make the surface smoothness of the first TCO film 13a higher than that of the second TCO film 13b, the second TCO film may be a polycrystalline film and the first TCO film may be an amorphous film. An example of a TCO film that easily becomes an amorphous film is an IZO (indium zinc oxide) film. A preferred method for forming the IZO film is sputtering.

第２のＴＣＯ膜１３ｂの表面の平滑性を特に低いものとするために、成膜後に、第２のＴＣＯ膜１３ｂの表面をエッチング処理して荒らすこともできる。それによって、第２のＴＣＯ膜１３ｂの表面で光の乱反射が生じるようになり、ＬＥＤ素子の光取出し効率が改善される。多結晶質のＴＣＯ膜の場合、当該ＴＣＯ膜を溶解させ得る液体を接触させると、結晶粒界が速くエッチングされるために、表面が荒れた状態となる。ＩＴＯ膜の場合には、そのような液体として、塩酸などの酸を用いることができる。ＴＣＯ膜の表面を荒らす他の方法として、膜表面上に金属やポリマーの微粒子を付着させ、この微粒子をエッチングマスクに用いるドライエッチング処理を施す方法が挙げられる。この方法でＩＴＯ膜の表面を荒らす具体的な手順については、例えば、非特許文献１を参照することができる。   In order to make the smoothness of the surface of the second TCO film 13b particularly low, the surface of the second TCO film 13b can be roughened by etching after film formation. Thereby, irregular reflection of light occurs on the surface of the second TCO film 13b, and the light extraction efficiency of the LED element is improved. In the case of a polycrystalline TCO film, when a liquid capable of dissolving the TCO film is brought into contact, the crystal grain boundary is etched quickly, so that the surface becomes rough. In the case of an ITO film, an acid such as hydrochloric acid can be used as such a liquid. As another method for roughening the surface of the TCO film, there is a method in which fine particles of metal or polymer are attached on the surface of the film, and a dry etching process using the fine particles as an etching mask is performed. For a specific procedure for roughening the surface of the ITO film by this method, for example, Non-Patent Document 1 can be referred to.

好適な実施形態では、図７に示すように、メタル膜１４とＧａＮ系半導体膜１２の間から、第２のＴＣＯ膜１３ｂを取り除く。換言すれば、ＧａＮ系半導体膜１２の表面と、メタル膜１４の裏面とが、第１のＴＣＯ膜１３ａのみを挟んで対向する部分を設ける。こうすることにより、メタル膜１４の裏面をより平滑なものとすることができる。なぜなら、第１のＴＣＯ膜１３ａは、表面平滑性に優れたＧａＮ系半導体膜１２上に直接形成した方が、第２のＴＣＯ膜１３ｂを介して形成するよりも、表面が平滑になるからである。なお、この図７の例では、メタル膜１４とＧａＮ系半導体膜１２の間から、第２のＴＣＯ膜１３ｂの一部分を取り除いているが、第２のＴＣＯ膜１３ｂの全部を取り除いてもよい。   In a preferred embodiment, as shown in FIG. 7, the second TCO film 13 b is removed from between the metal film 14 and the GaN-based semiconductor film 12. In other words, a portion is provided in which the front surface of the GaN-based semiconductor film 12 and the back surface of the metal film 14 face each other with only the first TCO film 13a interposed therebetween. By doing so, the back surface of the metal film 14 can be made smoother. This is because the surface of the first TCO film 13a is smoother when formed directly on the GaN-based semiconductor film 12 having excellent surface smoothness than when it is formed via the second TCO film 13b. is there. In the example of FIG. 7, a part of the second TCO film 13b is removed from between the metal film 14 and the GaN-based semiconductor film 12, but the entire second TCO film 13b may be removed.

（第２の実施形態）
図８は、本発明の電極を用いたＧａＮ系ＬＥＤ素子の他の構造例を示す図面であり、図８（ａ）は平面図、図８（ｂ）は図８（ａ）のＰ−Ｑ線の位置における断面図である。この図に示すＧａＮ系ＬＥＤ素子では、ｐ電極だけでなく、ｎ電極も、ＴＣＯ膜１５ａとＴＣＯ膜１５ｂとからなる透明電極を有している。ｎ電極は、更に、該透明電極上の一部にボンディングパッドとして形成されたメタル膜１６を有している。ＴＣＯ膜１５ａはＴＣＯ膜１５ｂよりも高い表面平滑性を有しており、メタル膜１６はそのＴＣＯ膜１５ａの表面に形成されている。 (Second Embodiment)
FIG. 8 is a drawing showing another structural example of a GaN-based LED element using the electrode of the present invention, FIG. 8 (a) is a plan view, and FIG. 8 (b) is a PQ of FIG. 8 (a). It is sectional drawing in the position of a line. In the GaN-based LED element shown in this figure, not only the p-electrode but also the n-electrode has a transparent electrode composed of the TCO film 15a and the TCO film 15b. The n-electrode further has a metal film 16 formed as a bonding pad on a part of the transparent electrode. The TCO film 15a has higher surface smoothness than the TCO film 15b, and the metal film 16 is formed on the surface of the TCO film 15a.

図８に示すＧａＮ系ＬＥＤ素子の好ましい製造方法においては、エピウェハの形成後、まず、ＲＩＥによりｐ型層１２−３および発光層１２−２の一部を除去して、ｎ型層１２−１を部分的に露出させる。その後で、ｐ型層１２−３上へのＴＣＯ膜１３ｂの形成と、ｎ型層１２−１の露出面上へのＴＣＯ膜１５ｂの形成とを、同時に行う。好ましくは、エピウェハの表面全体にＴＣＯ膜を形成した後、不要部分を除去することにより、ｐ型層１２−３上にＴＣＯ膜１３ｂを残し、ｎ型層１２−１の露出面上にＴＣＯ膜１５ｂを残す。ＴＣＯ膜１３ｂ上への、ＴＣＯ膜１３ａおよびメタル膜１４の形成、ならびに、ＴＣＯ膜１５ｂ上への、ＴＣＯ膜１５ａおよびメタル膜１６の形成については、第１の実施形態と同様に、リフトオフ法を用いて行うことができる。   In the preferable manufacturing method of the GaN-based LED element shown in FIG. 8, after the formation of the epi-wafer, first, a part of the p-type layer 12-3 and the light emitting layer 12-2 is removed by RIE, and the n-type layer 12-1 Is partially exposed. Thereafter, the formation of the TCO film 13b on the p-type layer 12-3 and the formation of the TCO film 15b on the exposed surface of the n-type layer 12-1 are simultaneously performed. Preferably, after the TCO film is formed on the entire surface of the epi-wafer, unnecessary portions are removed, thereby leaving the TCO film 13b on the p-type layer 12-3 and the TCO film on the exposed surface of the n-type layer 12-1. Leave 15b. The formation of the TCO film 13a and the metal film 14 on the TCO film 13b and the formation of the TCO film 15a and the metal film 16 on the TCO film 15b are performed by the lift-off method as in the first embodiment. Can be used.

（第３の実施形態）
図９は、本発明の電極を用いたＧａＮ系ＬＥＤ素子の他の構造例を示す断面図である。このＧａＮ系ＬＥＤ素子は垂直型の素子構造を有しており、一方の電極は基板１１の裏面上に形成されている。基板１１は、ＳｉＣ、ＧａＮ、ＺｎＯなどからなる導電性の基板であり、その上に、ＧａＮ系半導体膜１２が形成されている。ＧａＮ系半導体膜１２中には、Ｓｉ添加ＧａＮからなるｎ型層１２−１と、Ｍｇ添加ＡｌＧａＮからなるｐ型層１２−３と、これらの間に挟まれた、ＩｎＧａＮ井戸層とＧａＮ障壁層とからなる多重量子井戸構造の発光層１２−２とが含まれている。ｐ型層１２−３上には、ｐ電極が形成されている。このｐ電極は、ＴＣＯ膜１３ａとＴＣＯ膜１３ｂとからなる透明電極１３を有している。ｐ電極は、更に、この透明電極の一部上にボンディングパッドとして形成されたメタル膜１４を有している。ＴＣＯ膜１３ｂはｐ型層１２−３の上面を略全面的に覆っており、ＴＣＯ膜１３ａはＴＣＯ膜１３ｂの一部上に形成されている。ＴＣＯ膜１３ａはＴＣＯ膜１３ｂよりも表面の平滑性が高く、メタル膜１４はＴＣＯ膜１３ａの表面に形成されている。また、メタル膜１４の裏面の平滑性をより高くするために、ＧａＮ系半導体膜１２とメタル膜１４とがＴＣＯ膜１３ａのみを挟んで対向する部分が設けられている。基板１１の裏面上には、該裏面に接するＴＣＯ膜１５と、その上に積層されたメタル膜１６とから構成された、ｎ電極が形成されている。 (Third embodiment)
FIG. 9 is a sectional view showing another structural example of the GaN-based LED element using the electrode of the present invention. This GaN-based LED element has a vertical element structure, and one electrode is formed on the back surface of the substrate 11. The substrate 11 is a conductive substrate made of SiC, GaN, ZnO or the like, and a GaN-based semiconductor film 12 is formed thereon. In the GaN-based semiconductor film 12, an n-type layer 12-1 made of Si-doped GaN, a p-type layer 12-3 made of Mg-doped AlGaN, and an InGaN well layer and a GaN barrier layer sandwiched therebetween. And a light emitting layer 12-2 having a multiple quantum well structure. A p-electrode is formed on the p-type layer 12-3. The p-electrode has a transparent electrode 13 composed of a TCO film 13a and a TCO film 13b. The p-electrode further has a metal film 14 formed as a bonding pad on a part of the transparent electrode. The TCO film 13b covers substantially the entire upper surface of the p-type layer 12-3, and the TCO film 13a is formed on a part of the TCO film 13b. The TCO film 13a has higher surface smoothness than the TCO film 13b, and the metal film 14 is formed on the surface of the TCO film 13a. Further, in order to further increase the smoothness of the back surface of the metal film 14, a portion where the GaN-based semiconductor film 12 and the metal film 14 face each other with only the TCO film 13a interposed therebetween is provided. On the back surface of the substrate 11, an n-electrode composed of a TCO film 15 in contact with the back surface and a metal film 16 stacked thereon is formed.

（好適な実施形態）
本発明の電極において、ＴＣＯで形成する透明電極の膜厚は特に限定されないが、例えば、０．１μｍ〜１μｍとすることができる。好ましくは、０．２μｍ〜０．５μｍである。この透明電極は、発光層から放出される光の波長における透過率が、８０％以上となるように形成することが好ましい。この透過率は、より好ましくは８５％以上であり、更に好ましくは９０％以上である。透明電極に用いるＴＣＯ膜は、抵抗率が１×１０−４Ωｃｍ以下となるように形成することが望ましい。ＴＣＯ膜の形成方法としては、スパッタリング法、反応性スパッタリング法、真空蒸着法、イオンビームアシスト蒸着法、イオンプレーティング法、レーザアブレーション法、ＣＶＤ法、スプレー法、スピンコート法、ディップ法などが例示される。 (Preferred embodiment)
In the electrode of the present invention, the thickness of the transparent electrode formed by TCO is not particularly limited, but may be, for example, 0.1 μm to 1 μm. Preferably, it is 0.2 micrometer-0.5 micrometer. The transparent electrode is preferably formed so that the transmittance at the wavelength of the light emitted from the light emitting layer is 80% or more. This transmittance is more preferably 85% or more, and still more preferably 90% or more. The TCO film used for the transparent electrode is preferably formed so that the resistivity is 1 × 10 −4 Ωcm or less. Examples of TCO film formation methods include sputtering, reactive sputtering, vacuum deposition, ion beam assisted deposition, ion plating, laser ablation, CVD, spraying, spin coating, and dipping. Is done.

本発明の電極において、ＴＣＯ膜上にボンディングパッドとして設けるメタル膜の材料は特に限定されないが、好ましくは、少なくともＴＣＯ膜に接する部分を、白金族（Ｒｈ、Ｐｔ、Ｐｄ、Ｉｒ、Ｒｕ、Ｏｓ）、Ｎｉ（ニッケル）、Ｔｉ（チタン）、Ｗ（タングステン）、Ａｇ（銀）、Ａｌ（アルミニウム）などを用いて形成する。メタル膜の裏面側には、光反射率の良好な金属であるＡｌ、Ａｇまたは白金族元素を主成分として構成した反射層を設けることが好ましい。かかる反射層を設ける場合、メタル膜とＴＣＯ膜との間の接着力が低下しないように、該反射層とＴＣＯ膜との間に、Ｎｉ、Ｔｉ、Ｗ、Ｔｉ−Ｗなどからなる透光性の薄膜を挟んでもよい。この薄膜は、膜厚が２０ｎｍ以下、より好ましくは１０ｎｍ以下、更に好ましくは５ｎｍ以下となるように形成する。外部電極との接続が容易となるように、メタル膜の表層は、Ａｇ（銀）、Ａｕ（金）、Ｓｎ（錫）、Ｉｎ（インジウム）、Ｂｉ（ビスマス）、Ｃｕ（銅）、Ｚｎ（亜鉛）などで形成することが好ましい。メタル膜の膜厚は、例えば、０．２μｍ〜１０μｍとすることができるが、好ましくは、０．５μｍ〜２μｍである。メタル膜の形成には、真空蒸着法、スパッタリング法、ＣＶＤ法などを用いることができる。   In the electrode of the present invention, the material of the metal film provided as a bonding pad on the TCO film is not particularly limited, but preferably, at least a portion in contact with the TCO film is a platinum group (Rh, Pt, Pd, Ir, Ru, Os). , Ni (nickel), Ti (titanium), W (tungsten), Ag (silver), Al (aluminum), or the like. On the back side of the metal film, it is preferable to provide a reflective layer composed mainly of Al, Ag, or a platinum group element, which is a metal having a good light reflectance. When such a reflective layer is provided, a light-transmitting property made of Ni, Ti, W, Ti—W, or the like is provided between the reflective layer and the TCO film so that the adhesive force between the metal film and the TCO film does not decrease. The thin film may be sandwiched. This thin film is formed so that the film thickness is 20 nm or less, more preferably 10 nm or less, and still more preferably 5 nm or less. The surface layer of the metal film is made of Ag (silver), Au (gold), Sn (tin), In (indium), Bi (bismuth), Cu (copper), Zn (so that it can be easily connected to the external electrode. Zinc) or the like is preferable. The film thickness of the metal film can be, for example, 0.2 μm to 10 μm, and preferably 0.5 μm to 2 μm. For forming the metal film, a vacuum deposition method, a sputtering method, a CVD method, or the like can be used.

本発明の電極において、ＴＣＯ膜上にボンディングパッドとして設けるメタル膜の平面形状は特に限定されないが、好ましくは、円形または正多角形である。サイズについても特に限定されるものではないが、実装時の作業性の点からは、直径６０μｍの円を包含するサイズに形成することが望ましい。   In the electrode of the present invention, the planar shape of the metal film provided as a bonding pad on the TCO film is not particularly limited, but is preferably a circular or regular polygon. The size is not particularly limited, but from the viewpoint of workability at the time of mounting, it is desirable to form a size including a circle having a diameter of 60 μm.

本発明は上記実施形態に限定されるものではなく、発明の趣旨を損なわない範囲内で、種々の変形が可能である。   The present invention is not limited to the above-described embodiment, and various modifications can be made without departing from the spirit of the invention.

本発明の電極を用いたＧａＮ系ＬＥＤ素子の構造例を示す断面図である。It is sectional drawing which shows the structural example of the GaN-type LED element using the electrode of this invention. 図１に示すＧａＮ系ＬＥＤ素子の製造工程を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing process of the GaN-type LED element shown in FIG. 図１に示すＧａＮ系ＬＥＤ素子の製造工程を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing process of the GaN-type LED element shown in FIG. 図１に示すＧａＮ系ＬＥＤ素子の製造工程を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing process of the GaN-type LED element shown in FIG. 図１に示すＧａＮ系ＬＥＤ素子の製造工程説明するための断面図である。It is sectional drawing for demonstrating the manufacturing process of the GaN-type LED element shown in FIG. 図１に示すＧａＮ系ＬＥＤ素子の製造工程を説明するための断面図である。It is sectional drawing for demonstrating the manufacturing process of the GaN-type LED element shown in FIG. 本発明の電極を用いたＧａＮ系ＬＥＤ素子の構造例を示す断面図である。It is sectional drawing which shows the structural example of the GaN-type LED element using the electrode of this invention. 本発明の電極を用いたＧａＮ系ＬＥＤ素子の構造例を示す図であり、図８（ａ）は平面図、図８（ｂ）は図８（ａ）のＰ−Ｑ線の位置における断面図である。It is a figure which shows the structural example of the GaN-type LED element using the electrode of this invention, Fig.8 (a) is a top view, FIG.8 (b) is sectional drawing in the position of the PQ line of Fig.8 (a). It is. 本発明の電極を用いたＧａＮ系ＬＥＤ素子の構造例を示す断面図である。It is sectional drawing which shows the structural example of the GaN-type LED element using the electrode of this invention. 従来のＧａＮ系ＬＥＤ素子の構造を示す断面図である。It is sectional drawing which shows the structure of the conventional GaN-type LED element.

符号の説明Explanation of symbols

１１ 基板
１２ ＧａＮ系半導体膜
１２−１ ｎ型層
１２−２ 発光層
１２−３ ｐ型層
１３ 透明電極
１３ａ ＴＣＯ膜
１３ｂ ＴＣＯ膜
１４ メタル膜
１５ ＴＣＯ膜
１６ メタル膜 11 substrate 12 GaN-based semiconductor film 12-1 n-type layer 12-2 light emitting layer 12-3 p-type layer 13 transparent electrode 13a TCO film 13b TCO film 14 metal film 15 TCO film 16 metal film

Claims (5)

ＧａＮ系半導体膜の表面に接して形成された透明電極と、
該透明電極上の一部にボンディングパッドとして形成されたメタル膜と、からなり、
前記透明電極は、互いに電気的に接続された第１のＴＣＯ膜と第２のＴＣＯ膜とからなっており、
該第１のＴＣＯ膜および第２のＴＣＯ膜は、その両方が該透明電極の表面に露出しており、
該第１のＴＣＯ膜の表面は該第２のＴＣＯ膜の表面よりも平滑であり、
前記メタル膜は該第１のＴＣＯ膜の表面に形成されている、
ことを特徴とするＧａＮ系ＬＥＤ素子用の電極。 A transparent electrode formed in contact with the surface of the GaN-based semiconductor film;
A metal film formed as a bonding pad on a part of the transparent electrode,
The transparent electrode is composed of a first TCO film and a second TCO film electrically connected to each other,
The first TCO film and the second TCO film are both exposed on the surface of the transparent electrode,
The surface of the first TCO film is smoother than the surface of the second TCO film;
The metal film is formed on the surface of the first TCO film;
An electrode for a GaN-based LED element. 前記第１のＴＣＯ膜および前記メタル膜の平面形状およびサイズが同じである、請求項１に記載の電極。 The electrode according to claim 1, wherein the first TCO film and the metal film have the same planar shape and size. 前記ＧａＮ系半導体膜の表面と、前記メタル膜の裏面とが、前記第１のＴＣＯ膜のみを挟んで対向している部分を有する、請求項１または２に記載の電極。 3. The electrode according to claim 1, wherein a surface of the GaN-based semiconductor film and a back surface of the metal film have a portion facing each other with only the first TCO film interposed therebetween. 請求項１〜３のいずれかに記載の電極をｐ電極として有するＧａＮ系ＬＥＤ素子。 A GaN-based LED element having the electrode according to claim 1 as a p-electrode. 面状のＧａＮ系ＬＥＤ素子であって、請求項１に記載の電極をｐ電極およびｎ電極として、当該ＬＥＤ素子の同一面側に有する、ＧａＮ系ＬＥＤ素子。
A planar GaN-based LED element, wherein the electrode according to claim 1 is used as a p-electrode and an n-electrode on the same surface side of the LED element.
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