JP5178022B2 - 記憶素子の作製方法 - Google Patents

記憶素子の作製方法 Download PDF

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Publication number
JP5178022B2
JP5178022B2 JP2007022607A JP2007022607A JP5178022B2 JP 5178022 B2 JP5178022 B2 JP 5178022B2 JP 2007022607 A JP2007022607 A JP 2007022607A JP 2007022607 A JP2007022607 A JP 2007022607A JP 5178022 B2 JP5178022 B2 JP 5178022B2
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Japan
Prior art keywords
laser
film
laser beam
chip
laser irradiation
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Expired - Fee Related
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JP2007022607A
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English (en)
Japanese (ja)
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JP2007235117A (ja
JP2007235117A5 (enrdf_load_stackoverflow
Inventor
幸一郎 田中
洋正 大石
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007022607A priority Critical patent/JP5178022B2/ja
Publication of JP2007235117A publication Critical patent/JP2007235117A/ja
Publication of JP2007235117A5 publication Critical patent/JP2007235117A5/ja
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  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Laser Beam Processing (AREA)
  • Recrystallisation Techniques (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
JP2007022607A 2006-02-03 2007-02-01 記憶素子の作製方法 Expired - Fee Related JP5178022B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007022607A JP5178022B2 (ja) 2006-02-03 2007-02-01 記憶素子の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006026884 2006-02-03
JP2006026884 2006-02-03
JP2007022607A JP5178022B2 (ja) 2006-02-03 2007-02-01 記憶素子の作製方法

Publications (3)

Publication Number Publication Date
JP2007235117A JP2007235117A (ja) 2007-09-13
JP2007235117A5 JP2007235117A5 (enrdf_load_stackoverflow) 2010-02-25
JP5178022B2 true JP5178022B2 (ja) 2013-04-10

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JP2007022607A Expired - Fee Related JP5178022B2 (ja) 2006-02-03 2007-02-01 記憶素子の作製方法

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JP (1) JP5178022B2 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007258691A (ja) * 2006-02-21 2007-10-04 Semiconductor Energy Lab Co Ltd レーザ照射装置、レーザ照射方法、及び半導体装置の作製方法
JP2009212498A (ja) * 2008-02-04 2009-09-17 Nsk Ltd 露光装置及び露光方法
US8767786B2 (en) * 2008-12-17 2014-07-01 Mitsubishi Electric Corporation Laser processing apparatus, laser processing method, and manufacturing method of photovoltaic device
TWI594828B (zh) 2009-05-28 2017-08-11 伊雷克托科學工業股份有限公司 應用於雷射處理工件中的特徵的聲光偏轉器及相關雷射處理方法
CN110039173B (zh) * 2010-10-22 2021-03-23 伊雷克托科学工业股份有限公司 用于光束抖动和刮削的镭射加工系统和方法
JP6909392B2 (ja) * 2017-03-31 2021-07-28 株式会社東京精密 レーザ加工装置及びレーザ加工方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19511393B4 (de) * 1995-03-28 2005-08-25 Carl Baasel Lasertechnik Gmbh Gerät zur Substratbehandlung, insbesondere zum Perforieren von Papier
JP2000280085A (ja) * 1999-03-30 2000-10-10 Seiko Epson Corp レーザ加工装置及びその加工方法
JP4346254B2 (ja) * 2001-03-30 2009-10-21 住友重機械工業株式会社 レーザ加工装置とレーザ加工方法
JP2003051556A (ja) * 2001-08-03 2003-02-21 Sanyo Electric Co Ltd 半導体記憶装置
JP4215433B2 (ja) * 2002-01-23 2009-01-28 三菱商事株式会社 レーザビームによる識別コードのマーキング方法及び装置
JP4455884B2 (ja) * 2001-11-30 2010-04-21 パナソニック株式会社 一定のレーザーの走査経路アルゴリズムを利用するレーザーによるアブレーション加工方法。
JP2004306127A (ja) * 2003-04-10 2004-11-04 Matsushita Electric Ind Co Ltd 薄膜パターニング加工方法
JP2004356235A (ja) * 2003-05-27 2004-12-16 Seiko Epson Corp 半導体膜の製造方法、半導体装置の製造方法、集積回路、回路基板、電気光学装置、電子機器
JP4963160B2 (ja) * 2003-12-19 2012-06-27 株式会社半導体エネルギー研究所 半導体装置
WO2005081307A1 (en) * 2004-02-20 2005-09-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device, and ic card, ic tag, rfid, transponder, bill, securities, passport, electronic apparatus, bag, and garment

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JP2007235117A (ja) 2007-09-13

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