JP5176557B2 - Electrode pattern and wire bonding method - Google Patents

Electrode pattern and wire bonding method Download PDF

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JP5176557B2
JP5176557B2 JP2008008066A JP2008008066A JP5176557B2 JP 5176557 B2 JP5176557 B2 JP 5176557B2 JP 2008008066 A JP2008008066 A JP 2008008066A JP 2008008066 A JP2008008066 A JP 2008008066A JP 5176557 B2 JP5176557 B2 JP 5176557B2
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wire bonding
electrode pattern
pattern
wire
electrode
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JP2008263165A (en
JP2008263165A5 (en
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義浩 久
勉 山口
秀幸 田中
和則 松尾
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Mitsubishi Electric Corp
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Priority to KR1020080020362A priority patent/KR100941106B1/en
Priority to US12/042,650 priority patent/US7550673B2/en
Priority to CN2008100830350A priority patent/CN101272034B/en
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Description

この発明は、半導体装置や基板などの電極上にワイヤボンドを行うための電極パターンおよびワイヤボンディング方法に関するものである。   The present invention relates to an electrode pattern and a wire bonding method for performing wire bonding on an electrode such as a semiconductor device or a substrate.

電極と金属ワイヤを結線するワイヤボンディングを行う際、ボンディング装置にボンディング位置をティーチングする必要がある。通常、Ａｕボールなどでワイヤボンディングする際、Ａｕボールがワイヤボンディングされる電極内に充分に収まるように設計されている。半導体装置製造の際のワイヤボンディング工程において、ワイヤボンディング装置が結線すべき場所を把握するための技術として特開２００１−３２６２４１号公報に記載のものがある。   When performing wire bonding for connecting the electrode and the metal wire, it is necessary to teach the bonding position to the bonding apparatus. Usually, when wire bonding is performed with an Au ball or the like, the Au ball is designed so that it is sufficiently contained within an electrode to be wire bonded. Japanese Patent Laid-Open No. 2001-326241 discloses a technique for grasping a place where a wire bonding apparatus should be connected in a wire bonding process in manufacturing a semiconductor device.

レーザダイオードにワイヤボンディングする場合には、ワイヤボンディング用の電極パターンは細長い形状をしている。記録型レーザダイオードは、記録時の倍速が上がるにつれてレーザダイオードに要求される光出力が益々増大する一方で、低価格化の要求が非常に強い。これらの要求に応えるため、高出力を得るためにはレーザダイオードの縦方向の長さを長くし、低価格化のためにはレーザダイオードの横方向の長さを縮めて、単一ウエハ内から取れるチップ数を増やしている。そのため、例えば３５０ｍＷ級の記録型高出力レーザダイオードの場合、縦方向長さは２０００μｍ超、横方向長さは１５０μｍ以下という非常に細長い形状となっている。   In the case of wire bonding to a laser diode, the electrode pattern for wire bonding has an elongated shape. In the recording laser diode, the optical output required for the laser diode increases more and more as the double speed at the time of recording increases, while the demand for lower price is very strong. In order to meet these requirements, the length of the laser diode in the vertical direction is lengthened to obtain high output, and the length of the laser diode in the horizontal direction is shortened to reduce the price. The number of chips that can be taken is increased. Therefore, for example, in the case of a 350 mW class recording type high output laser diode, the length in the vertical direction is more than 2000 μm and the length in the horizontal direction is 150 μm or less.

記録型高出力レーザダイオードのパッケージへの実装形態は、アイレット上にサブマウントとレーザダイオードをＡｕＳｎ半田等で接着している。そしてレーザダイオードの電極と、リードもしくはアイレットとをワイヤボンディングするが、電極上の所定の位置にＡｕボールを形成するために、電極端部の特徴的なパターンを認識し、次にレーザの長手方向に所定量ずらした場所にＡｕボールをボンディングしている。アイレット上にサブマウントとレーザダイオードを接着する際、組立装置の精度の影響によりアイレットの中心線とレーザダイオードの中心線が最大２°程度傾くことがわかっている。   As a mounting form of the recording type high output laser diode in the package, the submount and the laser diode are bonded on the eyelet with AuSn solder or the like. The electrode of the laser diode and the lead or eyelet are wire-bonded, but in order to form the Au ball at a predetermined position on the electrode, the characteristic pattern of the electrode end is recognized, and then the longitudinal direction of the laser An Au ball is bonded to a place shifted by a predetermined amount. It has been found that when the submount and the laser diode are bonded on the eyelet, the center line of the eyelet and the center line of the laser diode are inclined by about 2 ° at the maximum due to the influence of the accuracy of the assembly apparatus.

特開２００１−３２６２４１号公報JP 2001-326241 A

レーザダイオード中心とアイレット中心に傾きがない場合、Ａｕボールは電極中心にボンディングできる。しかし、傾きがあるとＡｕボールが電極外にはみ出してしまうという問題があった。電極の長手方向の長さが長く、短辺方向の長さ（電極幅）が短いと短辺方向へのずれが大きくなり、Ａｕボールのはみ出し量が多くなる。電極端部のすぐ近傍にＡｕボールを形成すれば傾き誤差によるＡｕボールはみ出し量を少なくできるが、この場合、Ａｕボール近傍と離れた場所ではレーザダイオードに供給できる電流密度が変わってしまい正常なレーザダイオードの動作が困難になるという問題があった。そのため、Ａｕボールはレーザダイオードの中心付近に形成する必要がある。記録型高出力レーザダイオードのように細長い電極パターンにＡｕボールを形成する場合にはその影響はより顕著となる。   When there is no inclination between the laser diode center and the eyelet center, the Au ball can be bonded to the electrode center. However, there is a problem that Au balls protrude from the electrode when there is an inclination. When the length in the longitudinal direction of the electrode is long and the length in the short side direction (electrode width) is short, the displacement in the short side direction increases, and the amount of protrusion of the Au ball increases. If an Au ball is formed in the immediate vicinity of the electrode end, the amount of protrusion of the Au ball due to an inclination error can be reduced. However, in this case, the current density that can be supplied to the laser diode changes at a location away from the vicinity of the Au ball, and a normal laser There is a problem that the operation of the diode becomes difficult. Therefore, the Au ball needs to be formed near the center of the laser diode. In the case where an Au ball is formed on an elongated electrode pattern like a recording type high output laser diode, the influence becomes more remarkable.

本発明は、上記のような問題を解消するためになされたもので、精度よくワイヤボンディングを行うことができる電極パターンおよびワイヤボンディング方法を提供するものである。   The present invention has been made to solve the above-described problems, and provides an electrode pattern and a wire bonding method that can perform wire bonding with high accuracy.

この発明に係る電極パターンは、短辺と長辺を有するワイヤボンド用の電極パターンであって、ワイヤボンドの位置を決めるための基準位置を示すワイヤボンド基準パターンとワイヤボンド認識パターンを有し、前記電極パターンに接着されたワイヤボンディング用の金属部位で前記短辺に平行な方向の幅が最大となる位置を通る前記短辺に平行な方向の線と前記基準位置との距離Ｌと、前記ワイヤボンド認識パターンの前記長辺方向における中心を通る前記短辺に平行な方向の線と前記金属部位の前記短辺に平行な方向の幅が最大となる位置を通る前記短辺に平行な方向の線との距離Ｌｂが
Ｌ≧１４．３×（Ｗ−３ｄ／４）（μｍ）
Ｌｂ≦１４．３×（Ｗ−３ｄ／４）（μｍ）
ただし、
ｄ：電極パターンに接着されたワイヤボンディング用金属部位の前記短辺に平行な方向の幅の最大値（μｍ）
Ｗ：電極パターンの短辺に平行な方向の幅（μｍ）
であることを特徴とする電極パターンである。 The electrode pattern according to the present invention is an electrode pattern for a wire bond having a short side and a long side, and has a wire bond reference pattern and a wire bond recognition pattern indicating a reference position for determining the position of the wire bond, A distance L between a line in a direction parallel to the short side and a reference position passing through a position where a width in a direction parallel to the short side is maximum in a metal part for wire bonding bonded to the electrode pattern; A direction parallel to the short side passing through a position where the width in the direction parallel to the short side of the metal part and the line in the direction parallel to the short side passing through the center in the long side direction of the wire bond recognition pattern is maximum. The distance Lb from the line is L ≧ 14.3 × (W-3d / 4) (μm)
Lb ≦ 14.3 × (W-3d / 4) (μm)
However,
d: Maximum width (μm) in the direction parallel to the short side of the wire bonding metal part bonded to the electrode pattern
W: Width in the direction parallel to the short side of the electrode pattern (μm)
It is an electrode pattern characterized by being.

本発明は、上述の構成を備えることにより、細長い電極パターンの任意の位置に、ワイヤボンディング用ワイヤを形成することができる電極パターンを得ることができる。   By providing the above-described configuration, the present invention can provide an electrode pattern capable of forming a wire bonding wire at an arbitrary position of an elongated electrode pattern.

実施の形態１．
図１に本発明の実施の形態に係るワイヤボンド用の電極パターンの概略図を示す。また、図２に本発明の実施の形態に係るワイヤボンド用の電極パターンを用いた半導体素子の概略図を示す。以下、図１、図２を用いて説明する。本発明の実施の形態では細長いレーザダイオードチップにワイヤボンドを行った半導体素子を例とする。レーザダイオードチップには、ワイヤボンドのための電極パターン１０３が形成されている。この電極パターン１０３上のワイヤボンドを行う領域１１１内に直径ｄのＡｕボール１０９を形成してワイヤボンドを行う。その際、図２に示すアイレット２０１中心とレーザダイオード２０５の中心の傾きずれが無い状態（θ＝０）のときには、中心が電極パターン１０３の短辺に平行な方向における中心を通る長辺方向の線上となるように、Ａｕボール１０９を形成してワイヤボンドを行う。電極パターン１０３にはワイヤボンド認識パターン１０７となる特徴的なパターンが形成されている。本実施の形態では電極パターン１０３の長手方向の１辺に矩形の切り抜きを形成し、ワイヤボンド認識パターン１０７としている。各寸法を以下のように定める。
Ｌ：電極パターンのエッジ部（電極端部１０５）とワイヤボンド領域１１１に形成されたＡｕボール１０９の中心との最短距離（μｍ）
Ｌｂ：ワイヤボンド認識パターン１０７の長辺方向における中心を通る短辺に平行な方向の線とワイヤボンド領域１１１に形成されたＡｕボール１０９の中心との最短距離（μｍ）
ｄ：Ａｕボール１０９の直径（μｍ）
Ｗ：電極パターン１０３の短辺に平行な方向の幅（μｍ）
アイレット２０１中心とレーザダイオード２０５の中心の傾きずれ量θは組立て装置精度より最大２°となる。ワイヤボンド領域１１１にＡｕボール１０９を形成する際に、ワイヤボンド領域１１１からはみ出す量をｘとすると、ｘは次式で表される。
ｘ＝ｄ／２−Ｗ／２＋Ｌｔａｎθ（μｍ）
ここではみ出し量ｘをｄ／８まで許容した場合、ｔａｎ２°＝０．０３４９なので、ＬとＬｂはそれぞれ次式となる。
Ｌ＝１４．３×（Ｗ−３ｄ／４）（μｍ）
Ｌｂ＝１４．３×（Ｗ−３ｄ／４）（μｍ）
本実施の形態では、電極端部１０５をワイヤボンドの位置を特定するための基準となるワイヤボンド基準パターンとしている。このワイヤボンド基準パターンとワイヤボンド領域１１１内の直径ｄのＡｕボール１０９の中心との距離Ｌが、
Ｌ≧１４．３×（Ｗ−３ｄ／４）（μｍ）となる位置にワイヤボンドされる。このとき、電極パターン１０３上に形成されたワイヤボンド認識パターン１０７の長手方向における中心を通る短辺に平行な方向の線とＡｕボール１０９の中心との距離Ｌｂは
Ｌｂ≦１４．３×（Ｗ−３ｄ／４）（μｍ）
となるように位置決めされる。記録型高出力レーザダイオードを例にすると、レーザダイオードの長手方向の長さを２０００μｍ、幅１２０μｍ、電極の幅を８０μｍとして、Ａｕボール径が８０±１０μｍでは、Ｌは２８６μｍ程度となり、ワイヤボンド認識パターン無しでは、細長い電極の端の方にしかＡｕボールが形成できず、注入される電流密度が電極上端部と下端部で変わってしまい、レーザダイオードの動作が安定しない。本発明のワイヤボンド認識パターンを所望の位置に形成することにより、注入される電流密度の不均一を簡単に解消することができる。
本実施の形態では、ワイヤボンド基準パターンとして電極端部１０５を用いたが、電極端部以外にも、電極内の特徴的なパターンをワイヤボンド基準パターンとすることができる。例えば、電極パターン１０３の四隅のひとつには、チップの前後確認等のための切り欠きが形成されており、この切り欠きをワイヤボンド基準パターンとすることもできる。本実施の形態では、この切り欠きは矩形を組合わせた形状となっているが、円形や三角形など他の形状でも構わない。また、本実施の形態では、Ａｕボール１０９を形成してワイヤボンドを行ったが、ウェッジボンドの場合にはＡｕボールを形成せず、ワイヤ先端を超音波圧着して結線する。
Embodiment 1 FIG.
FIG. 1 shows a schematic diagram of an electrode pattern for wire bonding according to an embodiment of the present invention. FIG. 2 shows a schematic diagram of a semiconductor element using the wire bond electrode pattern according to the embodiment of the present invention. Hereinafter, a description will be given with reference to FIGS. In the embodiment of the present invention, a semiconductor element in which wire bonding is performed on an elongated laser diode chip is taken as an example. An electrode pattern 103 for wire bonding is formed on the laser diode chip. An Au ball 109 having a diameter d is formed in a region 111 where wire bonding is performed on the electrode pattern 103, and wire bonding is performed. At that time, when there is no tilt deviation between the center of the eyelet 201 and the center of the laser diode 205 shown in FIG. 2 (θ = 0), the center is in the long side direction passing through the center in the direction parallel to the short side of the electrode pattern 103. An Au ball 109 is formed so as to be on the line and wire bonding is performed. A characteristic pattern to be a wire bond recognition pattern 107 is formed on the electrode pattern 103. In the present embodiment, a rectangular cutout is formed on one side in the longitudinal direction of the electrode pattern 103 to form a wire bond recognition pattern 107. Each dimension is defined as follows.
L: shortest distance (μm) between the edge portion (electrode end portion 105) of the electrode pattern and the center of the Au ball 109 formed in the wire bond region 111
Lb: the shortest distance (μm) between the line in the direction parallel to the short side passing through the center in the long side direction of the wire bond recognition pattern 107 and the center of the Au ball 109 formed in the wire bond region 111
d: Diameter of the Au ball 109 (μm)
W: Width in the direction parallel to the short side of the electrode pattern 103 (μm)
The tilt deviation amount θ between the center of the eyelet 201 and the center of the laser diode 205 is 2 ° at the maximum due to the accuracy of the assembling apparatus. When the Au ball 109 is formed in the wire bond region 111, x is expressed by the following equation, where x is the amount protruding from the wire bond region 111.
x = d / 2−W / 2 + Ltanθ (μm)
Here, when the protrusion amount x is allowed up to d / 8, tan2 ° = 0.0349, so L and Lb are respectively expressed by the following equations.
L = 14.3 × (W-3d / 4) (μm)
Lb = 14.3 × (W-3d / 4) (μm)
In the present embodiment, the electrode end portion 105 is a wire bond reference pattern that serves as a reference for specifying the position of the wire bond. The distance L between this wire bond reference pattern and the center of the Au ball 109 having the diameter d in the wire bond region 111 is
Wire bonding is performed at a position where L ≧ 14.3 × (W−3d / 4) (μm) . At this time, the distance Lb between the line in the direction parallel to the short side passing through the center in the longitudinal direction of the wire bond recognition pattern 107 formed on the electrode pattern 103 and the center of the Au ball 109 is Lb ≦ 14.3 × (W -3d / 4) (μm)
Is positioned so that Taking a recordable high-power laser diode as an example, if the length in the longitudinal direction of the laser diode is 2000 μm, the width is 120 μm, the width of the electrode is 80 μm, the Au ball diameter is 80 ± 10 μm, L is about 286 μm, and wire bond recognition Without a pattern, an Au ball can be formed only at the end of the elongated electrode, and the injected current density changes at the upper end and lower end of the electrode, and the operation of the laser diode is not stable. By forming the wire bond recognition pattern of the present invention at a desired position, the nonuniformity of the injected current density can be easily eliminated.
In this embodiment, the electrode end portion 105 is used as the wire bond reference pattern. However, a characteristic pattern in the electrode can be used as the wire bond reference pattern in addition to the electrode end portion. For example, a notch for confirming the front and back of the chip is formed at one of the four corners of the electrode pattern 103, and this notch can be used as a wire bond reference pattern. In the present embodiment, the notch has a shape combining rectangles, but other shapes such as a circle and a triangle may be used. In this embodiment, the Au ball 109 is formed and wire bonding is performed. However, in the case of wedge bonding, the Au ball is not formed, and the wire tip is ultrasonically pressed and connected.

実施の形態２．
図３および図４に本発明の実施の形態２に係るワイヤボンド用の電極パターンの概略図を示す。実施の形態１では、図１に示すようにワイヤボンド認識パターン１０７を矩形の切り欠きパターンとしていたが、本実施の形態ではワイヤボンド認識パターンを図３に示すような丸い認識パターン形状、あるいは図４に示すような三角形状にした。円状のワイヤボンド認識パターン３０７では、このワイヤボンド認識パターン３０７を小さくした場合や、加工精度の低いエッチング法を用いた場合にエッチングだれが生じても、形状は丸い円状のまま変わらず、認識エラーを防ぐことができる。また、三角形状のワイヤボンド認識パターン４０７の場合は、同じ大きさの四角い形状に比べて直線部の長さを長くできるためにエッチングだれ等によるパターン崩れの影響を少なくすることができる効果がある。
ワイヤボンド認識パターン３０７、４０７は電極パターン３０３、４０３の長手方向の一辺の側部に形成することによりリフトオフ法で容易に形成することができる。また、エッチング等の方法を用いる場合には、図５に示すように、ワイヤボンド認識パターン５０７を電極パターン５０３の内部に形成してもよい。 Embodiment 2. FIG.
3 and 4 are schematic diagrams of electrode patterns for wire bonding according to Embodiment 2 of the present invention. In the first embodiment, the wire bond recognition pattern 107 is a rectangular cutout pattern as shown in FIG. 1, but in this embodiment, the wire bond recognition pattern is a round recognition pattern shape as shown in FIG. A triangular shape as shown in FIG. In the circular wire bond recognition pattern 307, even if etching dripping occurs when the wire bond recognition pattern 307 is reduced or an etching method with low processing accuracy is used, the shape remains a circular shape, Recognition errors can be prevented. Further, in the case of the triangular wire bond recognition pattern 407, since the length of the straight line portion can be made longer than that of a square shape of the same size, the effect of pattern collapse due to etching dripping or the like can be reduced. .
The wire bond recognition patterns 307 and 407 can be easily formed by a lift-off method by being formed on the side of one side in the longitudinal direction of the electrode patterns 303 and 403. When a method such as etching is used, a wire bond recognition pattern 507 may be formed inside the electrode pattern 503 as shown in FIG.

実施の形態３．
本実施の形態は、ワイヤボンド認識パターンを認識しワイヤボンディングを行う方法に関するものである。
図１および図２を参照し、アイトレット２０１の外形を認識することでワイヤボンド認識パターン１０７のおおよその位置を知ることができる。次に、電極パターン１０３に形成されたワイヤボンド認識パターン１０７を認識する。このとき必要であればカメラ倍率を変更してワイヤボンド認識パターン１０７を認識する。最後にワイヤ２１１、２１３でワイヤボンドを行い、リード２０７、ＧＮＤへの結線を行う。この方法を用いた場合、アイレット２０１上のレーザダイオード２０５が、設定ミス、プリアライメントの不具合等や位置決め治具の不具合等で所定の位置からずれてしまったときにそれを即座に見つけることが可能となる。すなわちアイレット外形の認識後に予想位置にワイヤボンド認識パターンがないため、装置はそこで停止する。これはレーザダイオード接着工程での位置ずれ不良品の生産を最低限にできるため、不良品を作り続けることによるロスを抑える効果がある。 Embodiment 3 FIG.
The present embodiment relates to a method for recognizing a wire bond recognition pattern and performing wire bonding.
With reference to FIGS. 1 and 2, the approximate position of the wire bond recognition pattern 107 can be known by recognizing the outer shape of the eyelet 201. Next, the wire bond recognition pattern 107 formed on the electrode pattern 103 is recognized. At this time, if necessary, the wire magnification recognition pattern 107 is recognized by changing the camera magnification. Finally, wire bonding is performed with the wires 211 and 213 to connect to the leads 207 and GND. When this method is used, when the laser diode 205 on the eyelet 201 is displaced from a predetermined position due to a setting error, a pre-alignment failure, a positioning jig failure, etc., it can be immediately found. It becomes. That is, since there is no wire bond recognition pattern at the expected position after recognition of the eyelet contour, the device stops there. This can minimize the production of misaligned products in the laser diode bonding process, and thus has an effect of suppressing loss caused by continuing to produce defective products.

実施の形態４．
本実施の形態は、ワイヤボンド認識パターンを認識しワイヤボンディングを行う他の方法に関するものである。
実施の形態３と同様に、アイトレットの外形を認識することでワイヤボンド認識パターンのおおよその位置を知ることができる。次に、ワイヤボンドの基準となるワイヤボンド基準パターンを認識する。本実施の形態では、電極端部１０５をワイヤボンド基準パターンとして用いる。次に電極パターン１０３に形成されたワイヤボンド認識パターン１０７を認識する。このとき、必要であればカメラ倍率を変更してワイヤボンド認識パターン１０７を認識する。最後にワイヤボンドを行う。この方法を用いた場合、一旦チップの位置を確認するので、実施の形態３よりも正確にワイヤボンド認識パターン１０７の位置を認識することができる。また、電極パターン１０３の四隅のひとつに形成された切り欠きをワイヤボンド基準パターンとして位置確認に使用することもできる。本実施の形態では、この切り欠きは矩形を組合わせた形状となっているが、円形や三角形など他の形状でも構わない。 Embodiment 4 FIG.
The present embodiment relates to another method for recognizing a wire bond recognition pattern and performing wire bonding.
Similar to the third embodiment, it is possible to know the approximate position of the wire bond recognition pattern by recognizing the outer shape of the eyelet. Next, a wire bond reference pattern serving as a wire bond reference is recognized. In this embodiment, the electrode end portion 105 is used as a wire bond reference pattern. Next, the wire bond recognition pattern 107 formed on the electrode pattern 103 is recognized. At this time, if necessary, the camera magnification is changed to recognize the wire bond recognition pattern 107. Finally, wire bonding is performed. When this method is used, since the position of the chip is once confirmed, the position of the wire bond recognition pattern 107 can be recognized more accurately than in the third embodiment. Further, a notch formed at one of the four corners of the electrode pattern 103 can be used for position confirmation as a wire bond reference pattern. In the present embodiment, the notch has a shape combining rectangles, but other shapes such as a circle and a triangle may be used.

実施の形態５．
本実施の形態は、ワイヤボンド認識パターンを認識しワイヤボンディングを行う他の方法に関するものである。
まず図１を参照し、アイトレットの外形を認識することでワイヤボンド認識パターン１０７のおおよその位置を知ることができる。次に、電極パターン１０３に形成されたワイヤボンド認識パターン１０７を認識する。このとき必要であればカメラ倍率を変更してワイヤボンド認識パターン１０７を認識する。次に予想される位置にある電極端部１０５のパターンを認識し、最後にワイヤボンドを行う。この方法を用いた場合、実施の形態３のように接着工程での位置ずれを検知できるのに加えて、異機種のレーザダイオードチップを接着してしまったときの不良をすぐに検知できる。レーザダイオードチップは出力できる光パワーにより、レーザダイオード長手方向の長さが異なるので、異機種のチップの場合、電極端部のパターンを認識できなくなり、装置は停止するため、異機種チップ搭載不良を作り続けることによるロスを抑える効果がある。また、電極パターン１０３の四隅のひとつに形成された切り欠きを電極端部の確認に使用することもできる。本実施の形態では、この切り欠きは矩形を組合わせた形状となっているが、円形や三角形など他の形状でも構わない。 Embodiment 5 FIG.
The present embodiment relates to another method for recognizing a wire bond recognition pattern and performing wire bonding.
First, referring to FIG. 1, the approximate position of the wire bond recognition pattern 107 can be known by recognizing the outer shape of the eyelet. Next, the wire bond recognition pattern 107 formed on the electrode pattern 103 is recognized. At this time, if necessary, the wire magnification recognition pattern 107 is recognized by changing the camera magnification. Next, the pattern of the electrode end portion 105 at the expected position is recognized, and finally wire bonding is performed. When this method is used, in addition to being able to detect misalignment in the bonding process as in the third embodiment, it is possible to immediately detect defects when different types of laser diode chips are bonded. The length of the laser diode chip in the longitudinal direction of the laser diode differs depending on the optical power that can be output, so in the case of a different type of chip, the pattern of the electrode end cannot be recognized, and the device stops, so a different type of chip mounting failure may occur. There is an effect to suppress the loss by continuing to make. Moreover, the notch formed in one of the four corners of the electrode pattern 103 can also be used for confirmation of an electrode edge part. In the present embodiment, the notch has a shape combining rectangles, but other shapes such as a circle and a triangle may be used.

なお、本発明は、短辺と長辺を有する電極パターンに関するものであるが、アイレットの中心線に対するレーザダイオードの中心線の傾きずれによる影響は、電極パターンの短辺方向の幅Ｗが小さいほど大きい。Ｗが大きい場合には、ずれに対するマージンが大きくなるが、Ｗが１００μｍ以下になるとこのマージンがほとんど無くなる。従って、本発明は、Ｗが１００μｍ以下の場合に特に効果を有する。   Although the present invention relates to an electrode pattern having a short side and a long side, the influence of the tilt deviation of the center line of the laser diode with respect to the center line of the eyelet is smaller as the width W in the short side direction of the electrode pattern is smaller. large. When W is large, the margin for deviation becomes large, but when W is 100 μm or less, this margin is almost eliminated. Therefore, the present invention is particularly effective when W is 100 μm or less.

なお、本発明は、記録型高出力レーザダイオードについて説明してきたが、それ以外にも赤色レーザダイオードや青紫色レーザダイオード、通信用レーザダイオード、ＬＥＤ、その他の半導体装置、またはパッケージや基板上等の配線パターンなどのワイヤボンディングを行う電極パターンにも適応することができる。   Although the present invention has been described with respect to the recording type high-power laser diode, other than that, a red laser diode, a blue-violet laser diode, a communication laser diode, an LED, other semiconductor devices, a package, a substrate, etc. It can also be applied to an electrode pattern for wire bonding such as a wiring pattern.

本発明の実施の形態における電極パターンを示す概略図Schematic which shows the electrode pattern in embodiment of this invention 本発明の実施の形態における電極パターンを用いた半導体素子の概略図Schematic of a semiconductor device using an electrode pattern in an embodiment of the present invention 本発明の実施の形態における電極パターンを示す概略図Schematic which shows the electrode pattern in embodiment of this invention 本発明の実施の形態における電極パターンを示す概略図Schematic which shows the electrode pattern in embodiment of this invention 本発明の実施の形態における電極パターンを示す概略図Schematic which shows the electrode pattern in embodiment of this invention

符号の説明Explanation of symbols

１０３ 電極パターン
１０５ 電極端部
１０７ ワイヤボンド認識パターン
１０９ Ａｕボール
３０３ 電極パターン
３０７ ワイヤボンド認識パターン
４０３ 電極パターン
４０７ ワイヤボンド認識パターン
５０３ 電極パターン
５０７ ワイヤボンド認識パターン DESCRIPTION OF SYMBOLS 103 Electrode pattern 105 Electrode edge 107 Wire bond recognition pattern 109 Au ball 303 Electrode pattern 307 Wire bond recognition pattern 403 Electrode pattern 407 Wire bond recognition pattern 503 Electrode pattern 507 Wire bond recognition pattern

Claims (8)

短辺と長辺を有するワイヤボンド用の電極パターンであって、
ワイヤボンドの位置を決めるための基準位置を示すワイヤボンド基準パターンとワイヤボンド認識パターンを有し、
前記電極パターンに接着されたワイヤボンディング用の金属部位で前記短辺に平行な方向の幅が最大となる位置を通る前記短辺に平行な方向の線と前記基準位置との距離Ｌと、
前記ワイヤボンド認識パターンの前記長辺方向における中心を通る前記短辺に平行な方向の線と前記金属部位の前記短辺に平行な方向の幅が最大となる位置を通る前記短辺に平行な方向の線との距離Ｌｂが
Ｌ≧１４．３×（Ｗ−３ｄ／４）（μｍ）
Ｌｂ≦１４．３×（Ｗ−３ｄ／４）（μｍ）
ただし、
ｄ：電極パターンに接着されたワイヤボンディング用金属部位の前記短辺に平行な方向の幅の最大値（μｍ）
Ｗ：電極パターンの短辺に平行な方向の幅（μｍ）
であることを特徴とする電極パターン。 An electrode pattern for wire bonding having a short side and a long side,
A wire bond reference pattern indicating a reference position for determining the position of the wire bond and a wire bond recognition pattern;
A distance L between a line in a direction parallel to the short side and a reference position passing through a position where a width in a direction parallel to the short side is maximum in a metal part for wire bonding bonded to the electrode pattern;
The wire bond recognition pattern is parallel to the short side passing through the position where the line in the direction parallel to the short side passing through the center in the long side direction and the width of the metal part in the direction parallel to the short side is maximum. The distance Lb from the direction line is L ≧ 14.3 × (W-3d / 4) (μm)
Lb ≦ 14.3 × (W-3d / 4) (μm)
However,
d: Maximum width (μm) in the direction parallel to the short side of the wire bonding metal part bonded to the electrode pattern
W: Width in the direction parallel to the short side of the electrode pattern (μm)
The electrode pattern characterized by being. 前記ワイヤボンド基準パターンが電極パターン端部であることを特徴とする請求項１に記載の電極パターン。   The electrode pattern according to claim 1, wherein the wire bond reference pattern is an end portion of the electrode pattern. 前記電極パターンに接着された前記ワイヤボンディング用金属部位がＡｕボールであることを特徴とする請求項１あるいは２に記載の電極パターン。   The electrode pattern according to claim 1 or 2, wherein the wire bonding metal part bonded to the electrode pattern is an Au ball. 前記電極パターンに接着された前記ワイヤボンディング用金属部位が、ウェッジボンドのためにつぶされたワイヤ端部であることを特徴とする請求項１あるいは２に記載の電極パターン。   The electrode pattern according to claim 1 or 2, wherein the metal part for wire bonding bonded to the electrode pattern is a wire end portion crushed for a wedge bond. 前記Ｗが１００μｍ以下であることを特徴とする請求項１乃至４のいずれか１項に記載の電極パターン。   The electrode pattern according to claim 1, wherein the W is 100 μm or less. 請求項１乃至５のいずれか１項に記載の電極パターンにワイヤボンドするワイヤボンディング方法であって、パッケージ外形を認識した後に前記ワイヤボンド用認識パターンを認識してワイヤボンド位置を決め、ワイヤボンドを行うことを特徴とするワイヤボンディング方法。   6. A wire bonding method for wire bonding to an electrode pattern according to claim 1, wherein the wire bonding position is determined by recognizing the wire bonding recognition pattern after recognizing a package outer shape. Wire bonding method characterized by performing. 請求項１乃至５のいずれか１項に記載の電極パターンにワイヤボンドするワイヤボンディング方法であって、パッケージ外形を認識した後に前記ワイヤボンド基準パターンを認識し、さらに前記ワイヤボンド用認識パターンを認識した後にワイヤボンドを行うことを特徴とするワイヤボンディング方法。   6. A wire bonding method for wire bonding to an electrode pattern according to claim 1, wherein the wire bond reference pattern is recognized after recognizing a package outer shape, and further the wire bond recognition pattern is recognized. A wire bonding method characterized by performing wire bonding after the step. 請求項１乃至５のいずれか１項に記載の電極パターンにワイヤボンドするワイヤボンディング方法であって、パッケージ外形を認識した後に前記ワイヤボンド用認識パターンを認識し、さらに電極端のパターンを認識した後にワイヤボンドを行うことを特徴とするワイヤボンディング方法。   6. A wire bonding method for wire bonding to an electrode pattern according to claim 1, wherein the wire bond recognition pattern is recognized after the package outer shape is recognized, and the electrode end pattern is further recognized. A wire bonding method comprising performing wire bonding later.
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