JP5169371B2 - Microwave processing equipment - Google Patents

Microwave processing equipment Download PDF

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JP5169371B2
JP5169371B2 JP2008079610A JP2008079610A JP5169371B2 JP 5169371 B2 JP5169371 B2 JP 5169371B2 JP 2008079610 A JP2008079610 A JP 2008079610A JP 2008079610 A JP2008079610 A JP 2008079610A JP 5169371 B2 JP5169371 B2 JP 5169371B2
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power
unit
units
heated
microwave
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JP2009238402A (en
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健治 安井
等隆 信江
義治 大森
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Panasonic Corp
Panasonic Holdings Corp
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Panasonic Corp
Matsushita Electric Industrial Co Ltd
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/64Heating using microwaves
    • H05B6/66Circuits
    • H05B6/68Circuits for monitoring or control
    • H05B6/686Circuits comprising a signal generator and power amplifier, e.g. using solid state oscillators
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B6/00Heating by electric, magnetic or electromagnetic fields
    • H05B6/64Heating using microwaves
    • H05B6/72Radiators or antennas
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05BELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B2206/00Aspects relating to heating by electric, magnetic, or electromagnetic fields covered by group H05B6/00
    • H05B2206/04Heating using microwaves
    • H05B2206/044Microwave heating devices provided with two or more magnetrons or microwave sources of other kind

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Control Of High-Frequency Heating Circuits (AREA)
  • Constitution Of High-Frequency Heating (AREA)
  • Electric Ovens (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a device in which various heated objects are heated with high efficiency by most suitably arranging a plurality of power feeding parts on a heating chamber wall face, and by optimizing frequency and phase difference of a radiation microwave from respective power feeding parts. <P>SOLUTION: A microwave generation part 1 includes: oscillation parts 2a, 2b; electric power distribution parts 3a, 3b; amplification parts 5a to 5d; the heating chamber 8 to store the heated objects; the power feeding parts 7a to 7d which are arranged on the wall face of the heating chamber 8, to which output of the microwave generation part 1 is transmitted, and the microwave is radiation-supplied into the heating chamber 8; and phase variation parts 4a to 4d inserted into a microwave transmission passage. By variable control of the phase difference and an oscillation frequency of the microwave outputted from the power feeding parts 7a to 7d, reflected electric power against the various heated objects can be suppressed to the minimum, and heating with high efficiency can be achieved. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

本発明は、半導体素子を用いて構成したマイクロ波発生部を備えたマイクロ波処理装置に関するものである。   The present invention relates to a microwave processing apparatus including a microwave generation unit configured using a semiconductor element.

従来のこの種のマイクロ波処理装置は、半導体発振部と、発振部の出力を複数に分割する分配部と、分配された出力をそれぞれ増幅する複数の増幅部と、増幅部の出力を再合成する合成部とを有し、分配部と増幅部との間に位相器を設けたものがある(例えば、特許文献1参照)。   This type of conventional microwave processing apparatus includes a semiconductor oscillation unit, a distribution unit that divides the output of the oscillation unit into a plurality of units, a plurality of amplification units that amplify the distributed outputs, and a recombination of the outputs of the amplification units. In some cases, a phase shifter is provided between the distributing unit and the amplifying unit (see, for example, Patent Document 1).

そして、位相器はダイオードのオンオフ特性により、マイクロ波の通過線路長を切換える構成としている。また合成部は、90度および180度ハイブリッドを用いることで、合成部の出力を2つにすることができ、位相器を制御することで2出力の電力比を変化させたり、2出力間の位相を同相あるいは逆相にしたりすることができるとしている。
特開昭56−132793号公報
The phase shifter is configured to switch the length of the microwave transmission line according to the on / off characteristics of the diode. In addition, the synthesis unit can use two 90-degree and 180-degree hybrids, so that the output of the synthesis unit can be made two, and the power ratio of the two outputs can be changed by controlling the phase shifter, or between the two outputs. The phase can be in phase or out of phase.
JP 56-132793 A

しかしながら、前記従来の構成では、合成部の2つの出力から放射されるマイクロ波は、位相器によって位相を変化させることで、2つの放射アンテナからの放射電力比や位相差を瞬時に変化させることは可能だが、その放射によって、マイクロ波が供給される加熱室内に収納されたさまざまな形状・種類・量の異なる被加熱物により発生する反射電力を低く抑え、増幅部を効率よく動作させることは、難しいという課題を有していた。   However, in the above-described conventional configuration, the microwaves radiated from the two outputs of the synthesizer can change the radiated power ratio and phase difference from the two radiating antennas instantaneously by changing the phase by the phase shifter. It is possible, however, to reduce the reflected power generated by the heated objects of various shapes, types, and quantities stored in the heating chamber supplied with microwaves, and to operate the amplifier efficiently. , Had a difficult task.

本発明は、上記従来の課題を解決するもので、マイクロ波を放射する複数の給電部で対を構成するとともに、電力切換部によって被加熱物の加熱状況、形状によって対を切換えることで、さまざまな形状・種類・量の異なる被加熱物によって生じる反射電力を電力増幅部へ戻すことを抑制し、被加熱物を効率よく所望の状態に加熱するマイクロ波発処理装置を提供することを目的とする。   The present invention solves the above-described conventional problems, and forms a pair with a plurality of power feeding units that radiate microwaves, and also switches the pairs according to the heating state and shape of the object to be heated by the power switching unit. An object of the present invention is to provide a microwave processing apparatus that suppresses the return of reflected power generated by objects to be heated having different shapes, types, and quantities to the power amplification unit and efficiently heats the objects to be heated to a desired state. To do.

前記従来の課題を解決するために、本発明のマイクロ波処理装置は、被加熱物を収容する加熱室と、発振部と、前記発振部の出力を複数に分配して出力する電力分配部と、前記電力分配部の出力を切換える電力切換部と、前記電力切換部の出力をそれぞれ電力増幅する増幅部と、前記増幅部の出力を前記加熱室に供給すると共に、前記加熱室を構成する壁面に配置された複数の給電部と、前記給電部から前記増幅部に反射する電力を検出する反
射電力検出部と、前記反射電力検出部が検出する反射電力量によって前記発振部の発振周波数と前記電力切換部を制御する制御部とを備え、前記給電部は、少なくとも四つの給電部の内、二つの給電部を組み合わせて一対の給電部とする複数対の給電部を有し、前記制御部は、前記反射電力検出部が検出する反射電力量によって、前記電力切換部において前記複数対の給電部における二つの給電部の組み合わせを切り換える構成としたものである。
In order to solve the above-described conventional problems, a microwave processing apparatus of the present invention includes a heating chamber that accommodates an object to be heated, an oscillation unit, and a power distribution unit that distributes and outputs the output of the oscillation unit to a plurality of units. A power switching unit that switches the output of the power distribution unit, an amplifying unit that amplifies the power of the output of the power switching unit, and a wall that forms the heating chamber while supplying the output of the amplifying unit to the heating chamber And a plurality of power feeding units arranged in the antenna, and a power source that detects power reflected from the power feeding unit to the amplifying unit.
And a control unit that controls the oscillation frequency of the oscillating unit and the power switching unit according to the amount of reflected power detected by the reflected power detecting unit, and the power feeding unit includes at least four power feeding units. , Having a plurality of pairs of power feeding units that combine two power feeding units to form a pair of power feeding units, and the control unit is configured to have the plurality of pairs in the power switching unit according to the amount of reflected power detected by the reflected power detection unit. In this configuration, the combination of two power feeding units in the power feeding unit is switched .

これによって、制御部は反射電力検出部が検出する反射電力量によって、電力切換部を制御することで、複数対の給電部における二つの給電部の組み合わせを任意に構成できるため、給電部が加熱室内に放射するマイクロ波を効率よく被加熱物に吸収させることができ、またマイクロ波放射を異なる複数の給電部から行うことで、異なる方向から被加熱物に直接的にマイクロ波を入射させることができ、電力切換部によって給電部の対を切換えることにより、被加熱物へのマイクロ波の照射状況を変化させることができるので、さまざまな形状・種類・量の異なる被加熱物を所望の状態に加熱することができる。 As a result, the control unit can arbitrarily configure a combination of two power feeding units in a plurality of pairs of power feeding units by controlling the power switching unit according to the amount of reflected power detected by the reflected power detection unit. Microwaves radiated indoors can be efficiently absorbed by the object to be heated, and microwaves can be directly incident on the object to be heated from different directions by performing microwave radiation from different power supply units. By switching the pair of power feeding units with the power switching unit, it is possible to change the state of microwave irradiation to the heated object, so that the heated object with various shapes, types, and quantities can be changed to the desired state. Can be heated.

本発明のマイクロ波処理装置は、マイクロ波を放射する機能を有した複数の給電部を加熱室を構成する壁面に最適に配置するとともに電力切換部によって対となる給電部を任意に構成し、対となる給電部から放射されるマイクロ波の周波数、位相差、出力を制御することで、さまざまな形状・種類・量の異なる被加熱物を効率よく所望の状態に加熱するマイクロ波処理装置を提供することができる。   The microwave processing apparatus of the present invention arbitrarily arranges a plurality of power feeding units having a function of radiating microwaves on a wall surface constituting the heating chamber and arbitrarily configures a pair of power feeding units by the power switching unit, A microwave processing device that efficiently heats objects to be heated in various shapes, types, and quantities to a desired state by controlling the frequency, phase difference, and output of microwaves radiated from a pair of power supply units Can be provided.

1の発明は、被加熱物を収容する加熱室と、発振部と、前記発振部の出力を複数に分配して出力する電力分配部と、前記電力分配部の出力を切換える電力切換部と、前記電力切換部の出力をそれぞれ電力増幅する増幅部と、前記増幅部の出力を前記加熱室に供給すると共に、前記加熱室を構成する壁面に配置された複数の給電部と、前記給電部から前記増幅部に反射する電力を検出する反射電力検出部と、前記反射電力検出部が検出する反射電力量によって前記発振部の発振周波数と前記電力切換部を制御する制御部とを備え、前記給電部は、少なくとも四つの給電部の内、二つの給電部を組み合わせて一対の給電部とする複数対の給電部を有し、前記制御部は、前記反射電力検出部が検出する反射電力量によって、前記電力切換部において前記複数対の給電部における二つの給電部の組み合わせを切り換える構成とすることにより、制御部は反射電力検出部が検出する反射電力量によって、電力切換部を制御することで、複数対の給電部における二つの給電部の組み合わせを任意に構成できるため、給電部が加熱室内に放射するマイクロ波を効率よく被加熱物に吸収させることができ、またマイクロ波放射を異なる複数の給電部から行うことで異なる方向から被加熱物に直接的にマイクロ波を入射させることができ、電力切換部によって給電部の対を切換えることによって被加熱物へのマイクロ波の照射状況を変化させることができるので、さまざまな形状・種類・量の異なる被加熱物を所望の状態に効率よく加熱することができる。 A first invention includes a heating chamber that accommodates an object to be heated, an oscillation unit, a power distribution unit that distributes and outputs the output of the oscillation unit, and a power switching unit that switches the output of the power distribution unit. An amplifying unit for amplifying the output of each of the power switching units, a plurality of power feeding units disposed on a wall surface constituting the heating chamber, and supplying the output of the amplifying unit to the heating chamber; A reflected power detector that detects power reflected from the amplifier to the amplifier, and a controller that controls the oscillation frequency of the oscillator and the power switching unit according to the amount of reflected power detected by the reflected power detector, The power supply unit includes a plurality of pairs of power supply units that combine two power supply units out of at least four power supply units to form a pair of power supply units, and the control unit detects the amount of reflected power detected by the reflected power detection unit In the power switching unit With the structure for switching the combination of the two feeding parts in the feeding portion of the plurality of pairs, the control unit by the reflected power amount detected by the reflected power detection unit, by controlling the power switching unit, a plurality of pairs of feeding parts Since the combination of the two power feeding units in the can be arbitrarily configured, the microwave to be radiated into the heating chamber by the power feeding unit can be efficiently absorbed by the object to be heated, and the microwave radiation is performed from a plurality of different power feeding units The microwave can be directly incident on the object to be heated from different directions, and the irradiation state of the microwave to the object to be heated can be changed by switching the pair of the power feeding units by the power switching unit. A variety of shapes, types, and amounts of objects to be heated can be efficiently heated to a desired state.

2の発明は、特に第1の発明において、電力分配部と電力切換部の間に位相可変部を設け、制御部は、反射電力検出部が検出する反射電力量によって、発振部の給電部から放射されるマイクロ波の周波数と、前記位相可変部の位相差および前記電力切換部において複数対の給電部における二つの給電部の組み合わせを切り換えるよう各々制御する構成とすることにより、対を構成する給電部が放射するマイクロ波の位相を制御することによって被加熱物への電波の吸収状態を可変できると同時に電力切換え部によって対の構成を切換えることができるので被加熱物の形状、重量等に応じたマイクロ波の照射ができ、さまざまな形状・種類・量の異なる被加熱物を所望の状態に効率よく加熱することができる。 A second invention is, in particular, Te first invention smell, the phase variable part is provided between the power distribution unit and the power switching unit, control unit, the reflected power amount detected by the reflected power detection unit, the feeding of the oscillator The frequency of the microwave radiated from the unit, the phase difference of the phase variable unit, and the power switching unit are respectively controlled to switch the combination of two power feeding units in a plurality of pairs of power feeding units . By controlling the phase of the microwaves radiated by the power supply unit, the absorption state of the radio wave to the object to be heated can be varied, and at the same time, the power switching unit can switch the configuration of the pair, so the shape and weight of the object to be heated It is possible to irradiate microwaves in accordance with the like, and to efficiently heat an object to be heated having various shapes, types, and amounts to a desired state.

3の発明は、特に第1または第2の発明において、温度検出手段を設け、加熱室内に載置された被加熱物の加熱状況を検出する構成とすることにより、被加熱物の加熱状況に応じて適宜制御部は電力切換部を制御して対となる給電部を切換えることによって、被加熱物の加熱状況に応じたマイクロ波の照射ができ、さまざまな形状・種類・量の異なる被加熱物を所望の状態に効率よく加熱することができる。 A third invention is particularly Te first or second aspect of the invention odor, the temperature detecting means is provided, with the configuration for detecting the heating condition of the object to be heated placed on the heating chamber, heating of the article to be heated Depending on the situation, the control unit appropriately controls the power switching unit to switch the pair of power supply units, so that microwaves can be irradiated according to the heating status of the object to be heated, and various shapes, types, and quantities differ An object to be heated can be efficiently heated to a desired state.

4の発明は、特に第3の発明において、制御部は、温度検出手段の検出する被加熱物の加熱状況によって、電力切換部を制御することによって複数対の給電部における二つの給電部の組み合わせを切り換えるよう制御する構成としたものであり、被加熱物の加熱状況に応じて適宜制御部は電力切換部を制御して対となる給電部を切換えたり、位相可変部を制御することで給電部から照射されるマイクロ波の位相差を可変したり、発振部の発振周波数を可変することによって、被加熱物の加熱状況に応じたマイクロ波の照射ができ、さまざまな形状・種類・量の異なる被加熱物を所望の状態に効率よく加熱することができる。 A fourth invention is, in particular, Te third invention odor, control unit, depending on the heating conditions of the heated object detected by the temperature detection means, two of the power supply unit of the plurality of pairs by controlling the power switching unit The control unit is configured to control the combination of the power feeding units. The control unit appropriately controls the power switching unit according to the heating state of the object to be heated, and switches the paired power feeding units or the phase variable unit. By changing the phase difference of the microwave irradiated from the power supply unit or by changing the oscillation frequency of the oscillating unit, it is possible to irradiate microwaves according to the heating status of the object to be heated. Objects to be heated of different types and amounts can be efficiently heated to a desired state.

5の発明は、特に第1または第2の発明において、形状検出手段を設け、加熱室内に載置された被加熱物の形状および載置位置を検出する構成としたものである。これによって、あらかじめ被加熱物の形状に応じた給電部の対の選択が可能となるので、被加熱物に応じたマイクロ波の照射ができるので、さまざまな形状・種類・量の異なる被加熱物を所望の状態に効率よく加熱することができる。 A fifth invention is particularly Te first or second aspect of the invention smell, the shape detecting means is provided, in which a configuration for detecting the shape and placement position of the object to be heated placed on the heating chamber. This makes it possible to select a pair of power feeding units according to the shape of the object to be heated in advance, so that microwaves can be irradiated according to the object to be heated. Can be efficiently heated to a desired state.

6の発明は、特に第5の発明における制御部は、形状検出手段の検出する被加熱物の形状および載置位置によって、複数対の給電部における二つの給電部の組み合わせを切換えるよう電力切換部を制御する構成とすることにより、食品の形状に応じた給電部の対の選択が可能となるので、被加熱物に応じたマイクロ波の照射ができるので、さまざまな形状・種類・量の異なる被加熱物を所望の状態に効率よく加熱することができる。 A sixth invention is particularly control unit in the fifth invention, depending on the shape and mounting position of the detection to the heated object shape detecting means, to switch a combination of the two feeding parts in the power supply unit of the plurality of pairs By adopting a configuration that controls the power switching unit, it is possible to select a pair of power feeding units according to the shape of the food, so microwave irradiation according to the object to be heated can be performed, so various shapes, types, Objects to be heated having different amounts can be efficiently heated to a desired state.

以下、本発明の実施の形態について、図面を参照しながら説明する。なお、この実施の形態によって本発明が限定されるものではない。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. Note that the present invention is not limited to the embodiments.

(実施の形態1)
図1は、本発明の第1の実施形態におけるマイクロ波処理装置の構成図である。
(Embodiment 1)
FIG. 1 is a configuration diagram of a microwave processing apparatus according to the first embodiment of the present invention.

図1において、マイクロ波発生部は半導体素子を用いて構成した発振部2a、2b、発振部2a、2bの出力を2分配する電力分配部3aおよび3bと、分配部3a、3bそれぞれの出力を増幅する半導体素子を用いて構成した電力増幅部5a〜5dと、電力増幅部5a〜5dによって増幅されたマイクロ波出力を加熱室10内に放射する給電部8a〜8dと、電力分配部3a、3bと電力増幅部5a〜5dを接続するマイクロ波伝送路に挿入され入出力に任意の位相差を発生させる位相可変部4a〜4dと、位相可変部4a〜4dから出力されるマイクロ波を任意の電力増幅部5a〜5dに切換える電力切換部7と、電力増幅部5a〜5dと給電部8a〜8dを接続するマイクロ波伝送路に挿入され給電部8a〜8dから反射する電力を検出する電力検出部6a〜6dと、電力検出部6a〜6dと、電力検出部6a〜6dによって検出される反射電力に応じて発振部2aおよび2bの発振周波数と位相可変部4a〜4dの位相量および電力切換部7を制御する制御部12とで構成している。   In FIG. 1, the microwave generation unit includes oscillation units 2 a and 2 b configured using semiconductor elements, power distribution units 3 a and 3 b that distribute the output of the oscillation units 2 a and 2 b, and outputs of the distribution units 3 a and 3 b. Power amplifying units 5a to 5d configured using semiconductor elements to be amplified, power feeding units 8a to 8d for radiating the microwave output amplified by the power amplifying units 5a to 5d into the heating chamber 10, and a power distributing unit 3a, 3 b and phase variable units 4 a to 4 d that are inserted into a microwave transmission path connecting the power amplifying units 5 a to 5 d to generate an arbitrary phase difference between input and output, and microwaves output from the phase variable units 4 a to 4 d are arbitrary The power switching unit 7 for switching to the power amplifying units 5a to 5d and the power reflected by the power feeding units 8a to 8d inserted into the microwave transmission path connecting the power amplifying units 5a to 5d and the power feeding units 8a to 8d are detected. The power detectors 6a to 6d, the power detectors 6a to 6d, the oscillation frequencies of the oscillators 2a and 2b and the phase amounts of the phase variable units 4a to 4d according to the reflected power detected by the power detectors 6a to 6d And a control unit 12 that controls the power switching unit 7.

また、本発明のマイクロ波処理装置は、被加熱物を収納する略直方体構造からなる加熱室10を有し、加熱室10は金属材料からなる左壁面、右壁面、底壁面、上壁面、奥壁面および被加熱物11を収納するために開閉する開閉扉(図示していない)と、被加熱物11を載置する載置台から構成し、供給されるマイクロ波を内部に閉じ込めるように構成し
ている。そして、マイクロ波発生部の出力が伝送されそのマイクロ波を加熱室10内に放射供給する給電部8a〜8dが加熱室10を構成する壁面に配置されている。本実施の形態では制御的に対となる給電部を対向構成の左壁面と右壁面の略中央にそれぞれ給電部8aと8bを配置し、加熱室10の上壁面と底面の略中央にそれぞれ給電部8cと8dを配置した構成を示している。この給電部の配置は本実施の形態に拘束されるものではなくいずれかの壁面に複数の給電部を設けてもよいし、対向面ではない例えば右壁面と底壁面のような隣接する組合せで対となる給電部を構成してもかまわない。
In addition, the microwave processing apparatus of the present invention has a heating chamber 10 having a substantially rectangular parallelepiped structure that accommodates an object to be heated. The heating chamber 10 has a left wall surface, a right wall surface, a bottom wall surface, an upper wall surface, and a back wall made of a metal material. An opening / closing door (not shown) that opens and closes to store the wall surface and the object to be heated 11 and a mounting table on which the object to be heated 11 is placed are configured to confine the supplied microwave inside. ing. The power supply units 8 a to 8 d that transmit the output of the microwave generation unit and radiate the microwave into the heating chamber 10 are arranged on the wall surface of the heating chamber 10. In the present embodiment, power supply units 8a and 8b are arranged at the approximate center of the left wall surface and the right wall surface of the opposing configuration, respectively, and the power supply units that are paired in control are supplied to the approximate center of the upper wall surface and the bottom surface of the heating chamber 10, respectively. The structure which has arrange | positioned the parts 8c and 8d is shown. The arrangement of the power supply unit is not limited to the present embodiment, and a plurality of power supply units may be provided on any wall surface, or may be an adjacent combination such as a right wall surface and a bottom wall surface that are not opposed surfaces. You may comprise the electric power feeding part used as a pair.

電力増幅部5a〜5dは、低誘電損失材料から構成した誘電体基板の片面に形成した導電体パターンにて回路を構成し、各増幅部の増幅素子である半導体素子を良好に動作させるべく各半導体素子の入力側と出力側にそれぞれ整合回路を配している。   Each of the power amplifying units 5a to 5d constitutes a circuit with a conductor pattern formed on one side of a dielectric substrate made of a low dielectric loss material, and each of the power amplifying units 5a to 5d is configured to operate the semiconductor element which is an amplifying element of each amplifying unit. Matching circuits are arranged on the input side and output side of the semiconductor element, respectively.

各々の機能ブロックを接続するマイクロ波伝送路は、誘電体基板の片面に設けた導電体パターンによって特性インピーダンスが略50Ωの伝送回路を形成している。   The microwave transmission path connecting each functional block forms a transmission circuit having a characteristic impedance of about 50Ω by a conductor pattern provided on one side of the dielectric substrate.

電力分配部3aおよび3bは、例えばウィルキンソン型分配器のような出力間に位相差を生じない同相分配器であってもよいし、ブランチライン型やラットレース型のような出力間に位相差を生じる分配器であってもかまわない。この電力分配部3a、3bによって各々の出力には発振部2a、2bから入力されたマイクロ波電力の略1/2の電力が伝送される。   The power distribution units 3a and 3b may be in-phase distributors that do not cause a phase difference between outputs such as a Wilkinson distributor, or may have a phase difference between outputs such as a branch line type or a rat race type. It may be the resulting distributor. The power distribution units 3a and 3b transmit approximately half of the microwave power input from the oscillation units 2a and 2b to the respective outputs.

また、位相可変部4a〜4dは、印加電圧に応じて容量が変化する容量可変素子を用いて構成し、各々の位相可変範囲は、0度から略180度の範囲としている。これによって位相可変部4a〜4dより出力されるマイクロ波電力の位相差は0度から±180度の範囲を制御することができる。   Further, the phase variable sections 4a to 4d are configured by using variable capacitance elements whose capacitance changes according to the applied voltage, and each phase variable range is a range from 0 degrees to about 180 degrees. As a result, the phase difference of the microwave power output from the phase varying units 4a to 4d can be controlled in the range of 0 degrees to ± 180 degrees.

電力切換部7は図2に示すように位相可変部4a〜4dの出力と電力増幅部5a〜5dの接続状態を(a)〜(c)の3つの状態のいずれかに切換えるように働く。このように動作することによって制御的に対となる給電部を任意に設定することができる。例えば図2(a)の状態では給電部8aと8bの組合せおよび給電部8cと8dの組合せが制御的に対となるので位相可変部4a、4bを制御することで給電部8aおよび8bから照射されるマイクロ波の位相差を制御することができ、位相可変部4c、4dを制御することで給電部8cおよび8dから照射されるマイクロ波の位相差を制御することができる。また、図2(b)の状態では給電部8aと8cの組合せ、給電部8bと8dの組合せが制御的な対を構成し、図2(c)の状態では給電部8aと8dの組合せと給電部8bと8cの組合せが制御的な対を構成する。   As shown in FIG. 2, the power switching unit 7 functions to switch the connection state between the outputs of the phase variable units 4a to 4d and the power amplification units 5a to 5d to any one of the three states (a) to (c). By operating in this way, it is possible to arbitrarily set a pair of power feeding units in control. For example, in the state of FIG. 2A, the combination of the power feeding units 8a and 8b and the combination of the power feeding units 8c and 8d form a control pair. The phase difference of the microwaves to be applied can be controlled, and the phase difference of the microwaves irradiated from the power supply units 8c and 8d can be controlled by controlling the phase variable units 4c and 4d. In the state of FIG. 2B, the combination of the power feeding units 8a and 8c and the combination of the power feeding units 8b and 8d constitute a control pair, and in the state of FIG. 2C, the combination of the power feeding units 8a and 8d. A combination of the power feeding units 8b and 8c forms a controllable pair.

また、電力検知部6a〜6dは、加熱室8側から電力増幅部(5a〜5d)側にそれぞれ伝送するいわゆる反射波の電力を抽出するものであり、電力結合度をたとえば約40dBとし、反射電力の約1/10000の電力量を抽出する。この電力信号はそれぞれ、検波ダイオード(図示していない)で整流化しコンデンサ(図示していない)で平滑処理し、その出力信号を制御部12に入力させている。   The power detection units 6a to 6d extract the power of so-called reflected waves respectively transmitted from the heating chamber 8 side to the power amplification unit (5a to 5d) side, and the power coupling degree is set to about 40 dB, for example. An amount of electric power that is about 1/10000 of the electric power is extracted. Each power signal is rectified by a detection diode (not shown), smoothed by a capacitor (not shown), and the output signal is input to the control unit 12.

制御部12は、使用者が直接入力する被加熱物の加熱条件あるいは加熱中に被加熱物の加熱状態から得られる加熱情報と電力検知部6a〜6dよりの検知情報に基づいて、マイクロ波発生部の構成要素である発振部2aおよび2bと電力増幅部5a〜5dのそれぞれに供給する駆動電力の制御や位相可変部4a〜4dに供給する電圧を制御し、加熱室10内に収納された被加熱物を最適に加熱する。   The control unit 12 generates microwaves based on the heating information directly input by the user or the heating information obtained from the heating state of the heated object during heating and the detection information from the power detection units 6a to 6d. The drive power supplied to each of the oscillation units 2a and 2b and the power amplification units 5a to 5d, which are constituent elements of the unit, and the voltage supplied to the phase variable units 4a to 4d are controlled and stored in the heating chamber 10 Heats the object to be heated optimally.

また、マイクロ波発生部には主に電力増幅部5a〜5dに備えた半導体素子の発熱を放
熱させる放熱手段(図示していない)を配する。
In addition, a heat radiating means (not shown) for dissipating heat generated by the semiconductor elements provided in the power amplifiers 5a to 5d is mainly disposed in the microwave generation unit.

以上のように構成されたマイクロ波処理装置について、以下その動作、作用を説明する。   About the microwave processing apparatus comprised as mentioned above, the operation | movement and an effect | action are demonstrated below.

まず被加熱物を加熱室10に収納し、その加熱条件を操作部(図示していない)から入力し、加熱開始キーを押す。加熱開始信号を受けた制御部12の制御出力信号によりマイクロ波発生部が動作を開始する。制御部12は、駆動電源(図示していない)を動作させて発振部2aおよび2bに電力を供給する。この時、発振部2a、2bの初期の発振周波数は、たとえば2400MHzに設定する電圧信号を供給し、発振が開始する。   First, an object to be heated is stored in the heating chamber 10, the heating condition is input from an operation unit (not shown), and a heating start key is pressed. The microwave generator starts to operate according to the control output signal of the controller 12 that has received the heating start signal. The control unit 12 operates a drive power supply (not shown) to supply power to the oscillation units 2a and 2b. At this time, the initial oscillation frequency of the oscillation units 2a and 2b is supplied with a voltage signal set to 2400 MHz, for example, and oscillation starts.

発振部2a、2bを動作させると、その出力は電力分配部3a、3bにて各々略1/2分配され、4つのマイクロ波電力信号となる。以降、駆動電源を制御して電力増幅部5a〜5dを動作させる。   When the oscillating units 2a and 2b are operated, their outputs are distributed approximately ½ each by the power distributing units 3a and 3b, resulting in four microwave power signals. Thereafter, the drive power supply is controlled to operate the power amplifiers 5a to 5d.

そしてそれぞれのマイクロ波電力信号は、並列動作する電力増幅部5a〜5d、電力検知部6a〜6dを経て、第1の給電部8a〜8dにそれぞれ出力され、加熱室10内に放射される。このときの各電力増幅部はそれぞれ100W未満、たとえば50Wのマイクロ波電力を出力する。   The respective microwave power signals are output to the first power feeding units 8 a to 8 d through the power amplification units 5 a to 5 d and the power detection units 6 a to 6 d that operate in parallel, and are radiated into the heating chamber 10. Each power amplification unit at this time outputs microwave power of less than 100 W, for example, 50 W.

加熱室10内に供給されるマイクロ波電力が被加熱物に100%吸収されると加熱室10からの反射電力は0Wになるが、被加熱物の種類・形状・量が被加熱物を含む加熱室10の電気的特性を決定し、マイクロ波発生部の出力インピーダンスと加熱室10のインピーダンスとに基づいて、加熱室10側からマイクロ波発生部側に伝送する反射電力が生じる。   When 100% of the microwave power supplied into the heating chamber 10 is absorbed by the object to be heated, the reflected power from the heating chamber 10 becomes 0 W, but the type, shape, and amount of the object to be heated include the object to be heated. The electrical characteristics of the heating chamber 10 are determined, and the reflected power transmitted from the heating chamber 10 side to the microwave generating portion side is generated based on the output impedance of the microwave generating portion and the impedance of the heating chamber 10.

電力検出器6a〜6dは、マイクロ波発生部側に伝送する反射電力を検出し、その反射電力量に比例した信号を検出するものであり、その検出信号を受けた制御部12は、反射電力が極小値となる発振周波数および位相差の選択を行う。この周波数、位相差の選択に対して、制御部12は、位相可変部4a〜4dによって生じる位相差を0度の状態で発振部2aおよび2bの発振周波数を初期の2400MHzから例えば1MHzピッチで高い周波数側に変化させ、周波数可変範囲の上限である2500MHzに到達する。この操作を行うことで制御部12は発振部2a、2bの発振周波数に対する反射電力の配列を得ることができる。制御部12はこの反射電力が最も小さくなる発振部2a、2bの条件で制御するとともに発振出力を入力された加熱条件に対応した出力が得られるように制御する。これにより、各増幅部5a〜5dはそれぞれ所定のマイクロ波電力を出力する。そして、それぞれの出力は給電部8a〜8dに伝送され加熱室10内に放射される。   The power detectors 6a to 6d detect the reflected power transmitted to the microwave generation unit and detect a signal proportional to the amount of reflected power. The control unit 12 that receives the detection signal receives the reflected power. Select the oscillation frequency and phase difference at which becomes the minimum value. In response to the selection of the frequency and the phase difference, the control unit 12 increases the oscillation frequency of the oscillation units 2a and 2b from the initial 2400 MHz, for example, at a 1 MHz pitch with the phase difference generated by the phase variable units 4a to 4d being 0 degrees. The frequency is changed to reach 2500 MHz which is the upper limit of the frequency variable range. By performing this operation, the control unit 12 can obtain an array of reflected power with respect to the oscillation frequencies of the oscillation units 2a and 2b. The control unit 12 controls the conditions of the oscillation units 2a and 2b where the reflected power is minimized, and controls the oscillation output so that an output corresponding to the input heating condition is obtained. Thereby, each amplification part 5a-5d outputs predetermined microwave electric power, respectively. Each output is transmitted to the power feeding units 8 a to 8 d and radiated into the heating chamber 10.

位相可変部4a〜4dは加熱開始から所定の変化量で時々刻々その位相を変化させる。位相可変部4a〜4dによって位相を変化させることによって加熱室10内で第1の給電部8a〜8dが放射するマイクロ波が干渉する位置を変化させることができるので加熱室10内に載置された被加熱物11の位置に応じて干渉位置を制御することで被加熱物11を均等もしくは局部的に加熱することができる。   The phase varying units 4a to 4d change the phase every moment with a predetermined change amount from the start of heating. The position where the microwaves radiated by the first power supply units 8a to 8d can be changed in the heating chamber 10 by changing the phase by the phase variable units 4a to 4d, so that it is placed in the heating chamber 10. By controlling the interference position according to the position of the heated object 11, the heated object 11 can be heated evenly or locally.

また、電力切換部7は電力検出部6a〜6bが検出する反射電力が大きくなってくると、制御的に対を構成する給電部を切換えるように制御部12から信号を受けて、制御的に対となる給電部を図2(a)〜(c)のいずれかの状態になるように切換える。このように動作することによって制御的な対を構成する給電部を切換えることができるので加熱室10内でのマイクロ波の干渉位置を大きく変えることができるので加熱室10内に載置された被加熱物11の加熱状態を大きく変えることができるので、被加熱物11の形状・量
などによって加熱が不足している部位にマイクロ波を集中するように給電部の切換を行い被加熱物全体で均等な加熱を促すことができる。また、逆に被加熱物11の一部分のみを局所的に加熱したい場合も同じように電力切換部7によって制御的な対を切換えることによってマイクロ波の干渉位置を制御することができる。
Further, when the reflected power detected by the power detectors 6a to 6b increases, the power switching unit 7 receives a signal from the control unit 12 so as to controlly switch the power feeding units constituting the pair, The paired power feeding units are switched so as to be in any one of the states shown in FIGS. By operating in this way, it is possible to switch the power supply units constituting the control pair, so that the microwave interference position in the heating chamber 10 can be greatly changed, so that the object placed in the heating chamber 10 can be changed. Since the heating state of the heated object 11 can be changed greatly, the power feeding unit is switched so that the microwaves are concentrated on the portion where the heating is insufficient depending on the shape and amount of the heated object 11 and the entire heated object. Uniform heating can be promoted. On the contrary, when it is desired to locally heat only a part of the object to be heated 11, the interference position of the microwave can be controlled by switching the control pair by the power switching unit 7 in the same manner.

このように動作することで様々な形状・大きさ・量の異なる被加熱物に対しても反射電力が最も小さくなる条件で加熱を開始することができ、電力増幅部5a〜5dに備えられた半導体素子が反射電力によって過剰に発熱することを防止でき熱的な破壊を回避することができる。   By operating in this way, it is possible to start heating under the condition that the reflected power is the smallest even for heated objects having various shapes, sizes, and amounts, and the power amplifiers 5a to 5d are provided. It is possible to prevent the semiconductor element from excessively generating heat due to the reflected power and to avoid thermal destruction.

図3は加熱動作中における制御的に対となっている位相可変部4a、4bの位相差および発振部2の発振周波数の制御例を示すフローチャートである。別の対である位相可変部4c、4dも同様の制御をするためここでは代表して一方の対である位相可変部4a、4bの制御フローについて説明する。はじめにある周波数fで発振部2が発振している状態でΔf(例えば0.1MHz)発振周波数をずらした状態に制御(ステップ102)し、そのときの反射電力を計測する(ステップ103)。制御部12はこの反射電力と前回(発振周波数を変化させる前に)計測した反射電力を比較し、反射電力が減少していればΔfをそのままの値とし(ステップ106)、反射電力が増加していればΔfの符号を逆にする(ステップ108)。この操作によって発振周波数の変化に対して反射電力が常に減少する方向で制御することができる。   FIG. 3 is a flowchart showing a control example of the phase difference of the phase variable units 4a and 4b and the oscillation frequency of the oscillating unit 2 that are paired in control during the heating operation. Since the other phase variable units 4c and 4d perform the same control, the control flow of the phase variable units 4a and 4b as one pair will be representatively described here. First, Δf (for example, 0.1 MHz) is controlled so that the oscillation frequency is shifted while the oscillation unit 2 is oscillating at a certain frequency f (step 102), and the reflected power at that time is measured (step 103). The control unit 12 compares this reflected power with the reflected power measured last time (before changing the oscillation frequency), and if the reflected power is reduced, Δf is left as it is (step 106), and the reflected power increases. If so, the sign of Δf is reversed (step 108). By this operation, the reflected power can be controlled to always decrease with respect to the change of the oscillation frequency.

また、位相可変部4a、4bは、加熱動作中に一定の変化幅ΔΦで、その位相差を時々刻々変化させていく(ステップ101)。この位相可変部4a、4bによって生じる位相差Φによって加熱室10内でのマイクロ波の干渉位置が変化するため被加熱物11を均等もしくは局部的に加熱することができる。   Further, the phase variable sections 4a and 4b change the phase difference from time to time with a constant change width ΔΦ during the heating operation (step 101). Since the microwave interference position in the heating chamber 10 is changed by the phase difference Φ generated by the phase variable portions 4a and 4b, the object to be heated 11 can be heated evenly or locally.

このように制御することで、加熱動作中においても電力検出部6a、6bは加熱室10からの反射電力を検出できるので、制御部12がこれを判断し、発振周波数および位相差を時々刻々微調整し常に反射電力が低い状態を維持できるのでさらに半導体素子の発熱を低く抑えることが可能となり、加熱効率を高く維持できるので短時間での加熱を図ることができる。あるいは、許容する反射電力を所定の値に定めその許容する反射電力の範囲において制御部12は時間的に位相可変部4a、4bの位相差と発振部2の発振周波数を変化させることもできる。このような動作をすることで加熱室10内でのマイクロ波の伝播状態を時間的に変化させることができるので、被加熱物の局所加熱を解消し、加熱の均一化を図ることも可能である。   By controlling in this way, the power detection units 6a and 6b can detect the reflected power from the heating chamber 10 even during the heating operation, so the control unit 12 determines this and minutely determines the oscillation frequency and phase difference. Since the state where the reflected power is always kept low can be adjusted, the heat generation of the semiconductor element can be further suppressed, and the heating efficiency can be maintained high, so that heating in a short time can be achieved. Alternatively, the allowable reflected power is set to a predetermined value, and the control unit 12 can temporally change the phase difference between the phase variable units 4a and 4b and the oscillation frequency of the oscillating unit 2 within the allowable reflected power range. By performing such an operation, the propagation state of the microwave in the heating chamber 10 can be changed with time, so that local heating of the object to be heated can be eliminated and the heating can be made uniform. is there.

なお、上記の説明では、位相可変部を2つ挿入した例で説明したが、電力分配部3aのいずれかの出力にのみ挿入し、その位相変化幅を0度から360度となるように構成することもできる。   In the above description, the example in which two phase variable units are inserted has been described. However, the phase change width is set to 0 degree to 360 degrees by inserting only one of the outputs of the power distribution unit 3a. You can also

(実施の形態2)
図4は本発明の第2の実施形態におけるマイクロ波処理装置の構成図である。
(Embodiment 2)
FIG. 4 is a configuration diagram of a microwave processing apparatus according to the second embodiment of the present invention.

第1の実施の形態との相違点は加熱動作中に被加熱物11の加熱状況を計測する温度検出手段13を設けた点である。また、同一の符号を付した構成要素は第1の実施形態と同様の動作・作用をするのでここでは詳細な説明は割愛する。   The difference from the first embodiment is that temperature detecting means 13 for measuring the heating state of the object to be heated 11 is provided during the heating operation. In addition, since components having the same reference numerals operate and operate in the same manner as in the first embodiment, detailed description thereof is omitted here.

温度検出手段13は加熱動作中の被加熱物11の温度状態を計測するものであり、例えば赤外線センサのように非接触で温度を検出する手段であってもよいし、被加熱物11に直接温度センサを取り付けるような構成であってもよい。本実施の形態では赤外線センサ
のような非接触型の温度検出手段13を配置した例で図示している。この温度検出手段13は加熱室10内に載置された被加熱物11全体の温度状態を計測できるように複数の赤外線センサをアレイ状に並べ加熱室10内全体を測定できるように構成している。
The temperature detection means 13 measures the temperature state of the object to be heated 11 during the heating operation, and may be a means for detecting the temperature in a non-contact manner, such as an infrared sensor, or directly on the object to be heated 11. The structure which attaches a temperature sensor may be sufficient. In the present embodiment, an example in which non-contact type temperature detecting means 13 such as an infrared sensor is arranged is shown. This temperature detection means 13 is configured to measure the entire inside of the heating chamber 10 by arranging a plurality of infrared sensors in an array so that the temperature state of the entire object to be heated 11 placed in the heating chamber 10 can be measured. Yes.

このように構成されたマイクロ波処理装置について、以下その動作・作用について説明する。   The operation and action of the microwave processing apparatus configured as described above will be described below.

電力切換部7は電力検出部6a〜6bが検出する反射電力が大きくなってきたり、温度検出手段13の検出する被加熱物11の加熱状況が局所的な加熱部位が発生したりすると制御的に対を構成する給電部を切換えるように制御部12から信号を受けて制御的に対となる給電部を図2(a)〜(c)のいずれかの状態になるように切換える。このように動作することによって制御的な対を構成する給電部を切換えることができるので加熱室10内でのマイクロ波の干渉位置を大きく変えることができるので加熱室10内に載置された被加熱物11の加熱状態を大きく変えることができるので、被加熱物11の形状・量などによって加熱が不足している部位にマイクロ波を集中するように給電部の切換を行い被加熱物全体で均等な加熱を促すことができる。また、逆に被加熱物11の一部分のみを局所的に加熱したい場合も同じように電力切換部7によって制御的な対を切換えることによってマイクロ波の干渉位置を制御することができるので、被加熱物11の一部分だけを局所加熱することも可能である。   When the reflected power detected by the power detectors 6a to 6b is increased or the heating state of the object 11 detected by the temperature detector 13 is generated locally, the power switching unit 7 is controlled. In response to a signal from the control unit 12, the paired power supply units are switched so as to be in any one of the states shown in FIGS. By operating in this way, it is possible to switch the power supply units constituting the control pair, so that the microwave interference position in the heating chamber 10 can be greatly changed, so that the object placed in the heating chamber 10 can be changed. Since the heating state of the heated object 11 can be changed greatly, the power feeding unit is switched so that the microwaves are concentrated on the portion where the heating is insufficient depending on the shape and amount of the heated object 11 and the entire heated object. Uniform heating can be promoted. Conversely, when only a part of the object to be heated 11 is to be heated locally, the position of the microwave interference can be controlled by switching the control pair by the power switching unit 7 in the same manner. It is also possible to locally heat only a part of the object 11.

(実施の形態3)
図5は、本発明の第3の実施形態におけるマイクロ波処理装置の構成図である。
(Embodiment 3)
FIG. 5 is a configuration diagram of a microwave processing apparatus according to the third embodiment of the present invention.

第1および第2の実施の形態との相違点は、加熱動作中に被加熱物11の形状を計測する形状検出手段14を設けた点である。また、同一の符号を付した構成要素は第1の実施形態と同様の動作・作用をするので、ここでは詳細な説明は割愛する。   The difference from the first and second embodiments is that a shape detecting means 14 for measuring the shape of the object to be heated 11 is provided during the heating operation. In addition, since components having the same reference numerals operate and operate in the same manner as in the first embodiment, detailed description thereof is omitted here.

形状検出手段14は加熱室10内に載置された被加熱物11の形状を検出するものであり、被加熱物11が平面状のものであるか、例えばコップのような背の高い被加熱物であるかを判別する。   The shape detection means 14 detects the shape of the object to be heated 11 placed in the heating chamber 10, and the object to be heated 11 is a flat one, for example, a tall object to be heated such as a cup. Determine if it is a thing.

このように構成されたマイクロ波処理装置について、以下その動作・作用について説明する。   The operation and action of the microwave processing apparatus configured as described above will be described below.

形状検出手段14が加熱室10内の被加熱物11の形状を計測し、例えば被加熱物11が平面状の形状であると計測した場合は制御的に対を構成する給電部8aと8bの組合せ、および、給電部8cと8dの組合せとなるように電力切換部7は切換えを行い加熱動作を開始する。また、被加熱物11が背の高い物体であると検出された場合には、例えば8aと8cの組合せと8bと8dの組合せとなるように電力切換部7は切換えを行う。また、形状検出手段14は被加熱物11の形状を測定できるので同時に被加熱物11の載置位置も検出することが可能であるため、被加熱物11の載置位置によっても電力切換部7は最適な制御的に対となる給電部を設定するように対を切換えることができる。   When the shape detection unit 14 measures the shape of the object to be heated 11 in the heating chamber 10 and, for example, measures that the object to be heated 11 has a planar shape, the power supply units 8a and 8b that controlly form a pair are controlled. The power switching unit 7 performs switching and starts a heating operation so as to be a combination and a combination of the power feeding units 8c and 8d. When it is detected that the object to be heated 11 is a tall object, the power switching unit 7 performs switching so that, for example, a combination of 8a and 8c and a combination of 8b and 8d are obtained. In addition, since the shape detection unit 14 can measure the shape of the object to be heated 11 and can simultaneously detect the placement position of the object to be heated 11, the power switching unit 7 also depends on the placement position of the object to be heated 11. Can switch the pair so as to set a pair of feeding units optimally in control.

また、電力切換部7は電力検出部6a〜6bが検出する反射電力が大きくなってきたり、温度検出手段13の検出する被加熱物11の加熱状況が局所的な加熱部位が発生したりすると制御的に対を構成する給電部を切換えるように制御部12から信号を受けて制御的に対となる給電部を図2(a)〜(c)のいずれかの状態になるように切換える。このように動作することによって制御的な対を構成する給電部を切換えることができるので加熱室10内でのマイクロ波の干渉位置を大きく変えることができるので加熱室10内に載置された被加熱物11の加熱状態を大きく変えることができるので、被加熱物11の形状・
量などによって加熱が不足している部位にマイクロ波を集中するように給電部の切換を行い被加熱物全体で均等な加熱を促すことができる。また、逆に被加熱物11の一部分のみを局所的に加熱したい場合も同じように電力切換部7によって制御的な対を切換えることによってマイクロ波の干渉位置を制御することができるので、被加熱物11の一部分だけを局所加熱することも可能である。
In addition, the power switching unit 7 controls when the reflected power detected by the power detection units 6a to 6b is increased, or when the heating state of the object to be heated 11 detected by the temperature detection means 13 is generated locally. In response to a signal from the control unit 12 so as to switch the power supply unit constituting the pair, the power supply unit that is paired in control is switched so as to be in any one of the states shown in FIGS. By operating in this way, it is possible to switch the power supply units constituting the control pair, so that the microwave interference position in the heating chamber 10 can be greatly changed, so that the object placed in the heating chamber 10 can be changed. Since the heating state of the heated object 11 can be changed greatly, the shape of the heated object 11
By switching the power feeding unit so that the microwaves are concentrated on a portion where heating is insufficient depending on the amount or the like, uniform heating can be promoted over the entire object to be heated. Conversely, when only a part of the object to be heated 11 is to be heated locally, the position of the microwave interference can be controlled by switching the control pair by the power switching unit 7 in the same manner. It is also possible to locally heat only a part of the object 11.

以上のように、本発明に係るマイクロ波処理装置は、複数の給電部を有しマイクロ波を放射する給電部を切換制御したり、動作中の給電部間のマイクロ波の位相差を変化させたりする装置を提供できるので、電子レンジで代表されるような誘電加熱を利用した加熱装置や生ゴミ処理機、あるいは半導体製造装置であるプラズマ電源のマイクロ波電源などの用途にも適用できる。   As described above, the microwave processing apparatus according to the present invention switches and controls a power supply unit that has a plurality of power supply units and radiates microwaves, or changes the phase difference of the microwaves between the power supply units in operation. Therefore, the present invention can be applied to applications such as a heating device using dielectric heating, a garbage disposal machine represented by a microwave oven, or a microwave power source of a plasma power source as a semiconductor manufacturing device.

本発明の実施の形態1におけるマイクロ波処理装置の構成図Configuration diagram of microwave processing apparatus according to Embodiment 1 of the present invention 同マイクロ波処理装置の電力切換部7の動作状態を示す図The figure which shows the operation state of the electric power switching part 7 of the same microwave processing apparatus 同マイクロ波処理装置の制御例を示すフローチャートFlow chart showing a control example of the microwave processing apparatus 本発明の実施の形態2におけるマイクロ波処理装置の構成図The block diagram of the microwave processing apparatus in Embodiment 2 of this invention 本発明の実施の形態3におけるマイクロ波処理装置の構成図The block diagram of the microwave processing apparatus in Embodiment 3 of this invention

2a、2b 発振部
3a、3b 電力分配部
4a〜4d 位相可変部
5a〜5d 電力増幅部
6a〜6d 電力検出部
7 電力切換部
8a〜8d 第1の給電部
10 加熱室
11 被加熱物
12 制御部
13 温度検出手段
14 形状検出手段
2a, 2b Oscillator 3a, 3b Power distribution unit 4a-4d Phase variable unit 5a-5d Power amplification unit 6a-6d Power detection unit 7 Power switching unit 8a-8d First power supply unit 10 Heating chamber 11 Heated object 12 Control Part 13 Temperature detection means 14 Shape detection means

Claims (6)

被加熱物を収容する加熱室と、
発振部と、
前記発振部の出力を複数に分配して出力する電力分配部と、
前記電力分配部の出力を切換える電力切換部と、
前記電力切換部の出力をそれぞれ電力増幅する増幅部と、
前記増幅部の出力を前記加熱室に供給すると共に、前記加熱室を構成する壁面に配置された複数の給電部と、
前記給電部から前記増幅部に反射する電力を検出する反射電力検出部と、
前記反射電力検出部が検出する反射電力量によって前記発振部の発振周波数と前記電力切換部を制御する制御部とを備え、
前記給電部は、少なくとも四つの給電部の内、二つの給電部を組み合わせて一対の給電部とする複数対の給電部を有し、
前記制御部は、前記反射電力検出部が検出する反射電力量によって、前記電力切換部において前記複数対の給電部における二つの給電部の組み合わせを切り換える構成としたマイクロ波処理装置。
A heating chamber for storing an object to be heated;
An oscillation unit;
A power distribution unit that distributes and outputs the output of the oscillation unit to a plurality of outputs;
A power switching unit for switching the output of the power distribution unit;
An amplifier for amplifying the output of each of the power switching units;
While supplying the output of the amplification unit to the heating chamber, a plurality of power supply units arranged on the wall surface constituting the heating chamber ,
A reflected power detection unit that detects power reflected from the power feeding unit to the amplification unit;
A control unit that controls the oscillation frequency of the oscillation unit and the power switching unit according to the amount of reflected power detected by the reflected power detection unit;
The power supply unit has a plurality of pairs of power supply units that combine two power supply units among at least four power supply units to form a pair of power supply units,
The microwave processing apparatus in which the control unit is configured to switch a combination of two power feeding units in the plurality of pairs of power feeding units in the power switching unit according to the amount of reflected power detected by the reflected power detection unit.
電力分配部と電力切換部の間に位相可変部を設け、
制御部は、反射電力検出部が検出する反射電力量によって、発振部の給電部から放射されるマイクロ波の周波数と、前記位相可変部の位相差および前記電力切換部において複数対の給電部における二つの給電部の組み合わせを切り換えるよう各々制御する構成とした請求項1に記載のマイクロ波処理装置。
A phase variable unit is provided between the power distribution unit and the power switching unit,
Control unit, the reflected power amount detected by the reflected power detection unit, and the frequency of the microwave radiated from the feeding part of the oscillator, the power supply unit of the plurality of pairs of the phase difference and the power switching unit of the phase variable parts The microwave processing device according to claim 1, wherein each of the two power feeding units is controlled to be switched .
温度検出手段を設け、加熱室内に載置された被加熱物の加熱状況を検出する構成とした請求項1または2に記載のマイクロ波処理装置。 The microwave processing apparatus according to claim 1 or 2, wherein a temperature detection unit is provided to detect a heating state of an object to be heated placed in a heating chamber. 制御部は、温度検出手段の検出する被加熱物の加熱状況によって、電力切換部を制御することによって複数対の給電部における二つの給電部の組み合わせを切り換えるよう制御する構成とした請求項3に記載のマイクロ波処理装置。 Control unit, the claims depending on heating conditions of the heated object detected by the temperature detecting means, and configured to control so as to switch the combination of the two feeding parts in the power supply unit of the plurality of pairs by controlling the power switching unit 3. The microwave processing apparatus according to 3. 形状検出手段を設け、加熱室内に載置された被加熱物の形状および載置位置を検出する構成とした請求項1または2に記載のマイクロ波処理装置。 Shape detecting means is provided, microwave processing apparatus according to claim 1 or 2 and configured to detect the shape and placement position of the object to be heated placed on the heating chamber. 制御部は、形状検出手段の検出する被加熱物の形状および載置位置によって、複数対の給電部における二つの給電部の組み合わせを切換えるよう電力切換部を制御する構成とした請求項5に記載のマイクロ波処理装置。 Control unit, depending on the shape and mounting position of the detection to the heated object shape detecting means, claim and configured to control the power switching unit to switch a combination of the two feeding parts in the power supply unit of the plurality of pairs 5 Microwave apparatus according to.
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