JP4935188B2 - Microwave equipment - Google Patents

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JP4935188B2
JP4935188B2 JP2006144798A JP2006144798A JP4935188B2 JP 4935188 B2 JP4935188 B2 JP 4935188B2 JP 2006144798 A JP2006144798 A JP 2006144798A JP 2006144798 A JP2006144798 A JP 2006144798A JP 4935188 B2 JP4935188 B2 JP 4935188B2
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microwave
heated
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JP2007317458A (en
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等隆 信江
誠 三原
健治 安井
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Panasonic Corp
Panasonic Holdings Corp
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Matsushita Electric Industrial Co Ltd
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Description

本発明は、周波数可変機能を有するマイクロ波発生手段を用いて被加熱物を誘電加熱するマイクロ波利用装置に関わる。   The present invention relates to a microwave utilization apparatus that dielectrically heats an object to be heated using a microwave generating means having a frequency variable function.

従来この種の代表的なマイクロ波利用装置として、マイクロ波加熱装置である電子レンジがある。この電子レンジに搭載されているマイクロ波発生手段としてのマグネトロンは、その形状に対する出力が大きく、さらにその動作効率が70%強という高い特徴がある。   Conventionally, there is a microwave oven as a microwave heating device as a typical microwave utilization device of this type. A magnetron as a microwave generating means mounted on the microwave oven has a high output with respect to its shape and a high operating efficiency of more than 70%.

一方、マグネトロンは発振周波数を自在に制御することができず、またマグネトロン自身の発振周波数が被加熱物を含む負荷側のインピーダンスの影響を受ける。このため、不適当な発振周波数での動作によって加熱室内に生じる定在波により被加熱物には不均一な加熱を生じる場合がある。   On the other hand, the magnetron cannot freely control the oscillation frequency, and the oscillation frequency of the magnetron itself is influenced by the impedance on the load side including the object to be heated. For this reason, the object to be heated may be unevenly heated due to the standing wave generated in the heating chamber due to the operation at an inappropriate oscillation frequency.

マグネトロンの発振周波数を可変制御するものとして、同軸型のマグネトロンなどがあるが、形状が大きいことや高価なことにより、電子レンジ用途には適さない。   There are coaxial magnetrons and the like that variably control the oscillation frequency of the magnetron, but they are not suitable for microwave oven applications due to their large shape and high price.

一方、近年の移動体通信の発展に伴う旺盛なマイクロ波回路技術の進化、あるいはSiC材料やGaN材料などの新しい半導体材料を利用した半導体素子そのものの技術革新などが進み、半導体素子を用いたマイクロ波発生手段が半導体製造に用いられるプラズマ処理装置などに実用化され始めている。   On the other hand, microwave circuit technology using semiconductor elements has progressed due to the advancement of vigorous microwave circuit technology accompanying the recent development of mobile communications, or the technological innovation of semiconductor elements themselves using new semiconductor materials such as SiC materials and GaN materials. Wave generation means are beginning to be put into practical use in plasma processing apparatuses used for semiconductor manufacturing.

この半導体素子により構成されるマイクロ波発生手段は、電圧制御型発振器や容量制御型発振器を発振源に使用することで、発振周波数を可変制御することが容易である。周波数自励式の固体化発振部を用い、加熱室への給電部分のインピーダンスに応じて発振周波数を制御して最適な整合状態を形成し効率的に加熱を行うというものがある(たとえば、特許文献1参照)。   The microwave generating means constituted by this semiconductor element can easily control the oscillation frequency variably by using a voltage controlled oscillator or a capacitance controlled oscillator as an oscillation source. There is one that uses a frequency self-excited solid-state oscillating unit and controls the oscillation frequency according to the impedance of the power feeding portion to the heating chamber to form an optimum matching state and efficiently heat (for example, Patent Documents) 1).

また、複数の放射アンテナを有し、被加熱物からのマイクロ波の反射波に基づいて、放射アンテナを選択的に動作させて加熱効率を高めるというものがある(たとえば、特許文献2参照)。   Also, there is a technique in which a plurality of radiation antennas are provided, and the radiation antenna is selectively operated on the basis of reflected microwaves from the object to be heated to increase heating efficiency (see, for example, Patent Document 2).

この装置は、それぞれの放射アンテナに送受信切換スイッチを設け、また被加熱物側から受信する反射波の振幅と位相情報が検出できるようにしている。この検出情報に基づいて、加熱にとって非効率な放射アンテナへのマイクロ波伝送を停止させることで効率的に加熱をするというものである。
特開昭59−165399号公報 特開2000−357583号公報
This apparatus is provided with a transmission / reception selector switch for each radiation antenna, and can detect the amplitude and phase information of the reflected wave received from the heated object side. Based on this detection information, heating is efficiently performed by stopping microwave transmission to a radiation antenna that is inefficient for heating.
JP 59-165399 A JP 2000-357583 A

しかしながら、発振周波数を制御して給電部分のインピーダンス整合を図ることは、加熱室の共振状態を探索して、その周波数を見つけることであり、加熱室内に生じる共振状態はひとつとは限らないので、探索して抽出した周波数が被加熱物を効果的に均一に加熱できるとは限らない課題がある。   However, controlling the oscillation frequency and matching the impedance of the power feeding part is to search the resonance state of the heating chamber and find the frequency, and the resonance state generated in the heating chamber is not necessarily one, There is a problem that the frequency extracted by searching cannot always effectively and uniformly heat the object to be heated.

また、放射アンテナを複数配置し、被加熱物に応じてそれぞれの放射アンテナからの反射波情報に基づいて動作させるべき放射アンテナを選択する方法は、被加熱物を多方面から加熱するという観点では均一化促進に寄与するであろうが、放射されたマイクロ波によって加熱室内には特定の定在波が生じるため、厚みのある被加熱物に対しては特定の定在波による加熱分布が加わり、加熱の均一化が阻害される課題がある。   Also, a method of arranging a plurality of radiation antennas and selecting a radiation antenna to be operated based on reflected wave information from each radiation antenna according to the object to be heated is from the viewpoint of heating the object to be heated from many directions. Although it will contribute to the promotion of homogenization, a specific standing wave is generated in the heating chamber by the radiated microwave, so that a heated distribution due to the specific standing wave is added to a thick object to be heated. There is a problem that the uniformity of heating is hindered.

本発明はかかる事情に鑑みてなされたものであり、周波数可変可能なマイクロ波発生手段を用い、被加熱物の均一な加熱の促進と高い加熱効率とを両立させたマイクロ波利用装置を提供することを目的とする。   The present invention has been made in view of such circumstances, and provides a microwave utilization apparatus that uses both microwave generation means capable of changing the frequency and achieves both uniform heating of the object to be heated and high heating efficiency. For the purpose.

前記従来の課題を解決するために、本発明のマイクロ波利用装置は、被加熱物が収納される加熱室と、前記加熱室へ供給するマイクロ波を発生させる周波数可変機能付マイクロ波発生手段と、前記加熱室へ供給するマイクロ波を放射する複数の放射手段と、前記放射手段からマイクロ波発生手段側に反射するそれぞれの反射波のエネルギによって動作する複数の切換手段と、前記マイクロ波発生手段が発生する周波数を可変制御する制御手段とを有し、周波数可変に伴う切換手段の動作により放射手段が選択されるものである。   In order to solve the above-described conventional problems, the microwave utilization apparatus of the present invention includes a heating chamber in which an object to be heated is stored, and a microwave generation unit with a frequency variable function that generates a microwave to be supplied to the heating chamber. A plurality of radiating means for radiating microwaves to be supplied to the heating chamber; a plurality of switching means operating by energy of respective reflected waves reflected from the radiating means toward the microwave generating means; and the microwave generating means And a control means for variably controlling the frequency at which the radiation occurs, and the radiating means is selected by the operation of the switching means associated with the variable frequency.

これにより、被加熱物の加熱に最適な周波数を探索中に各放射手段から反射する反射波のエネルギによって切換手段が自動的に動作し、動作する切換手段の数を最小にするように発振周波数を可変制御させることで、加熱室内にマイクロ波発生手段が発生するマイクロ波を最大効率で供給することができる。   As a result, during the search for the optimum frequency for heating the object to be heated, the switching means is automatically operated by the energy of the reflected wave reflected from each radiating means, and the oscillation frequency is set so as to minimize the number of switching means that operate. By variably controlling, the microwave generated by the microwave generating means can be supplied to the heating chamber with maximum efficiency.

また、マイクロ波発生手段の発振周波数を変化させる過程において反射波の大きい放射手段からのマイクロ波放射は自動的に放射が中断されるので、加熱室内に供給されるマイ
クロ波の大部分は、被加熱物の加熱に有効に作用することになり常時加熱効率を高く維持できる。
In addition, since the microwave radiation from the radiation means having a large reflected wave is automatically interrupted in the process of changing the oscillation frequency of the microwave generation means, most of the microwave supplied to the heating chamber is covered. It effectively acts on the heating of the heated object, so that the heating efficiency can always be kept high.

本発明のマイクロ波利用装置は、周波数可変可能なマイクロ波発生手段を用い、被加熱物の均一な加熱の促進と高い加熱効率とを両立させた装置を提供することができる。   The microwave utilization apparatus of the present invention can provide an apparatus that uses both microwave generation means capable of changing the frequency and achieves both uniform heating of an object to be heated and high heating efficiency.

第1の発明は、被加熱物が収納される加熱室と、前記加熱室へ供給するマイクロ波を放射する複数の放射手段と、半導体素子を用いた発振部と増幅部とで構成し前記増幅部は前記複数の放射手段にそれぞれ伝送させるマイクロ波を出力するよう構成した周波数可変機能付マイクロ波発生手段と、前記放射手段から前記増幅部側に反射するそれぞれの反射電力によって動作する前記増幅部の駆動電力供給線路に設けた複数の切換手段と、前記マイクロ波発生手段が発生する発振周波数を所定の時間間隔とステップでもって可変制御する制御手段とを有し、前記制御手段の周波数可変制御動作に伴う所定量を超える反射電力によって前記切換手段を作動させて、対象の放射手段に接続された増幅部の駆動電力供給を停止させ、前記増幅部の駆動電力供給が停止された後も周波数可変制御は継続し、反射電力が所定値を下回ると前記増幅部に駆動電力供給がされて被加熱物の加熱を実行するものであり、これによりマイクロ波発生手段の発振周波数を変化させる過程において反射波の大きい放射手段からのマイクロ波放射は自動的に放射が中断されるので、加熱室内に供給されるマイクロ波の大部分は、被加熱物の加熱に有効に作用することになり常時加熱効率を高く維持できるとともに周波数を可変可能な帯域全体に渡って変化させて加熱を行うことで、加熱室内での定在波の発生を回避し、被加熱物の均一な加熱を促進させることができる。 The first invention comprises a heating chamber in which an object to be heated is stored, a plurality of radiating means for radiating microwaves to be supplied to the heating chamber, an oscillating unit using a semiconductor element, and an amplifying unit. A microwave generating means with a variable frequency function configured to output microwaves to be transmitted to the plurality of radiating means, and the amplifying section operated by respective reflected power reflected from the radiating means to the amplifying section side A plurality of switching means provided on the driving power supply line, and a control means for variably controlling the oscillation frequency generated by the microwave generating means at predetermined time intervals and steps, and the frequency variable control of the control means by operating said switching means by the reflected power exceeds a predetermined amount due to operation, the drive power supply of the amplifier connected to the radiation unit of the target is stopped, the driving electric of the amplifying section Frequency variation control even after the supply is stopped continues, reflected power is intended to perform the heating of the object to be heated is the drive power supply to the amplifying part and below a predetermined value, thereby the microwave generating means In the process of changing the oscillation frequency, microwave radiation from the radiation means having a large reflected wave is automatically interrupted, so most of the microwave supplied to the heating chamber is effective for heating the object to be heated. It is possible to maintain high heating efficiency at all times and perform heating by changing the frequency over the entire variable band, so that the generation of standing waves in the heating chamber can be avoided. Uniform heating can be promoted.

また、マイクロ波発生手段は、半導体素子を用いた発振部と増幅部とで構成し、複数の放射手段にそれぞれ伝送させるマイクロ波を出力する並列動作の増幅部を備えたものであり、これにより放射手段と増幅部とをそれぞれ一対として作用させることができ、マイクロ波周波数可変制御時に反射波が大きい放射手段に接続された増幅部の動作を制御することで反射波による異状な増幅動作の回避および増幅部の破損を回避できる。   The microwave generating means is composed of an oscillating unit and an amplifying unit using a semiconductor element, and includes a parallel operation amplifying unit that outputs microwaves to be transmitted to a plurality of radiating units. The radiating means and the amplifying unit can act as a pair, and the abnormal amplification operation by the reflected wave can be avoided by controlling the operation of the amplifying unit connected to the radiating means having a large reflected wave during the variable microwave frequency control. Further, it is possible to avoid damage to the amplification unit.

第2の発明は、被加熱物が収納される加熱室と、前記加熱室へ供給するマイクロ波を放射する複数の放射手段と、半導体素子を用いた発振部と増幅部とで構成し前記増幅部は前記複数の放射手段にそれぞれ伝送させるマイクロ波を出力するよう構成した周波数可変機能付マイクロ波発生手段と、前記複数の放射手段のそれぞれから前記増幅部側に伝送されるマイクロ波反射電力を検出する手段と、前記マイクロ波発生手段が発生する発振周波数を所定の時間間隔とステップでもって可変制御する制御手段とを有し、前記制御手段が周波数可変制御の動作中に制御手段は前記反射電力を検出する手段が検出した反射電力量に比例した電圧信号を受け取り、入力された前記電圧信号を2つの基準レベルと比較し、第一の所定量を超える反射電力になると対象の放射手段に接続された増幅部の駆動電圧を低下させ、前記第一の所定量よりも大きい第二の所定量を超過すると対象の放射手段に接続された増幅部の駆動電力供給を停止させ、前記増幅部の駆動電力供給制御後も周波数可変制御は継続し、可変制御後に検出する反射電力量に応じて前記増幅部の駆動電力を制御して被加熱物の加熱を実行するものであり、これにより周波数可変制御時に反射波が大きい放射手段に接続された増幅部の動作を反射電力量に応じて動作させることができ、増幅部の半導体素子の異常動作や熱的破壊を回避しつつ複数の放射手段からの放射を継続させて被加熱物の均一加熱が図れる。 The second invention comprises a heating chamber in which an object to be heated is accommodated, a plurality of radiating means for radiating microwaves to be supplied to the heating chamber, an oscillating unit using a semiconductor element, and an amplifying unit. A microwave generating means with a frequency variable function configured to output microwaves to be transmitted to each of the plurality of radiating means, and microwave reflected power transmitted from each of the plurality of radiating means to the amplifying section side. Means for detecting, and control means for variably controlling the oscillation frequency generated by the microwave generating means at predetermined time intervals and steps, and the control means is configured to perform the reflection while the frequency variable control is in operation. A voltage signal proportional to the amount of reflected power detected by the means for detecting power is received, the input voltage signal is compared with two reference levels, and the reflected power exceeding the first predetermined amount is obtained. That when lowering the connected drive voltage of the amplifier to the radiating means of the subject, the drive power supply of the first amplification unit connected to the radiation unit of the target if it exceeds a second predetermined amount greater than a predetermined amount The frequency variable control continues even after the drive power supply control of the amplification unit, and the heating power of the object to be heated is controlled by controlling the drive power of the amplification unit according to the amount of reflected power detected after the variable control. As a result, the operation of the amplifying unit connected to the radiating means having a large reflected wave can be operated according to the amount of reflected power at the time of variable frequency control, and abnormal operation or thermal destruction of the semiconductor element of the amplifying unit can be prevented. The object to be heated can be uniformly heated by continuing the radiation from the plurality of radiation means while avoiding the problem.

第3の発明は、特に第1または第2の発明のマイクロ波利用装置であって、周波数可変機能付マイクロ波発生手段を複数とし、それぞれの前記マイクロ波発生手段が発生する発
振周波数を所定の時間間隔とステップでもって可変制御する複数の制御手段を有する構成としたものである。
The third aspect of the invention is particularly the microwave utilization apparatus of the first or second aspect of the invention, wherein there are a plurality of frequency variable function-equipped microwave generation means, and the oscillation frequency generated by each of the microwave generation means is a predetermined value. It has a configuration having a plurality of control means for variably controlling with time intervals and steps.

第4の発明は、特に第1乃至第3のいずれか1つの発明のマイクロ波利用装置であって、制御手段は、それぞれの増幅部に電力供給がなされているかどうかの信号を取り込み、前記増幅部のすべてが動作している場合は周波数可変の速度を遅くし、前記増幅部のすべてが動作を停止している場合は周波数可変の速度を早くするものである。   The fourth aspect of the invention is the microwave utilization device of any one of the first to third aspects of the invention, wherein the control means takes in a signal as to whether or not power is supplied to each amplification unit, and the amplification When all the units are operating, the frequency variable speed is decreased, and when all the amplifying units are not operating, the frequency variable speed is increased.

第5の発明は、特に第1乃至第3のいずれか1つの発明の複数の放射手段は、被加熱物を載置する載置手段の方向にマイクロ波を放射するように構成したものであり、これにより被加熱物にマイクロ波を直接入射し、加熱を促進できる。   In the fifth invention, in particular, the plurality of radiating means of any one of the first to third inventions are configured to radiate microwaves in the direction of the placing means for placing the object to be heated. As a result, microwaves can be directly incident on the object to be heated to promote heating.

第6の発明は、特に第1乃至第3のいずれか1つの発明の複数の放射手段は、それぞれ異なる共振周波数を有したものであり、これにより周波数可変制御を行っている過程において、反射電力が少ない放射手段を存在させ、連続的に加熱を実行させることができる。   In the sixth invention, in particular, the plurality of radiating means of any one of the first to third inventions have different resonance frequencies, and in the process of performing the variable frequency control, the reflected power There can be little radiation means and heating can be performed continuously.

第7の発明は、特に第3の発明の複数のマイクロ波発生手段は、それぞれの発振部の発振周波数をオーバーラップさせない構成としたものであり、これにより複数の発生源の周波数可変を同時に進行させることができ、加熱室内に異なる周波数のマイクロ波を供給して加熱を行うことで、加熱室内での定在波の発生を回避し、被加熱物の均一な加熱をさらに促進させることができる。 In the seventh invention, in particular, the plurality of microwave generating means of the third invention are configured such that the oscillation frequencies of the respective oscillation units do not overlap, thereby allowing the frequency variation of the plurality of generation sources to proceed simultaneously. By supplying microwaves with different frequencies into the heating chamber and performing heating, generation of standing waves in the heating chamber can be avoided and uniform heating of the object to be heated can be further promoted. .

以下、本発明の実施の形態について、図面を参照しながら説明する。なお、この実施形態によって本発明が限定されるものではない。   Hereinafter, embodiments of the present invention will be described with reference to the drawings. In addition, this invention is not limited by this embodiment.

(実施の形態1)
図1は本発明の第1の実施の形態におけるマイクロ波利用装置の構成図、図2は図1のマイクロ波発生手段の構成図である。
(Embodiment 1)
FIG. 1 is a block diagram of the microwave utilization apparatus according to the first embodiment of the present invention, and FIG. 2 is a block diagram of the microwave generating means of FIG.

図1〜図2において、被加熱物を収納する加熱室10は、被加熱物を出し入れする扉(図示していない)を一面に配し、それ以外の壁面は金属材料で構成し、供給されるマイクロ波を内部に閉じ込めるように構成している。加熱室10内の下方には、加熱室底壁面11と所定の間隔をもって被加熱物を載置する低誘電損失材料からなる載置板12を配する。また加熱室10の左右の壁面は、加熱室10の内外方向に絞り加工を施して載置板12の方向に傾斜させた壁面領域13、14を形成している。   1 to 2, a heating chamber 10 for storing an object to be heated is provided with a door (not shown) through which the object to be heated is taken in and out, and other wall surfaces are made of a metal material and supplied. The microwave is confined inside. A placement plate 12 made of a low dielectric loss material on which the object to be heated is placed at a predetermined interval from the heating chamber bottom wall surface 11 is disposed below the heating chamber 10. Further, the left and right wall surfaces of the heating chamber 10 form wall surface regions 13 and 14 that are drawn in the inner and outer directions of the heating chamber 10 and are inclined toward the mounting plate 12.

この傾斜壁面領域13、14をそれぞれ加熱室10の外側から覆う金属壁面15、16を設け、傾斜壁面領域と金属壁面とによって、導波管形状17、18を構成している。また、傾斜壁面領域13、14の略中央に放射手段である長方形形状の開口13a、14aを配する。   Metal wall surfaces 15 and 16 that respectively cover the inclined wall surface regions 13 and 14 from the outside of the heating chamber 10 are provided, and the waveguide wall shapes 17 and 18 are constituted by the inclined wall surface region and the metal wall surface. In addition, rectangular openings 13a and 14a, which are radiating means, are arranged at substantially the center of the inclined wall surface regions 13 and 14, respectively.

加熱室10の下側には、半導体素子を用いて構成したマイクロ波発生手段19を配する。このマイクロ波発生手段19は、電圧可変型の周波数可変機能を備えた発振部20と、発振部20の出力を一次増幅する初段増幅部21と、初段増幅部21の出力を2分配する分配部22と、分配されたマイクロ波をそれぞれ増幅する並列動作の主増幅部23、24とから構成している。また、主増幅部23、24のそれぞれの出力は、同軸線路25、26を伝送させて導波管17、18に導いている。そして、導波管17、18に導かれたマイクロ波は開口13a、14aから加熱室10内の載置板12の方向に放射させている。   Below the heating chamber 10, a microwave generation means 19 configured using a semiconductor element is disposed. The microwave generation means 19 includes an oscillation unit 20 having a voltage variable type frequency variable function, a first stage amplification unit 21 that primarily amplifies the output of the oscillation unit 20, and a distribution unit that distributes the output of the first stage amplification unit 21 into two. 22 and main operation amplifying units 23 and 24 in parallel operation for amplifying the distributed microwaves, respectively. The outputs of the main amplifying units 23 and 24 are transmitted through the coaxial lines 25 and 26 and guided to the waveguides 17 and 18. The microwaves guided to the waveguides 17 and 18 are radiated from the openings 13 a and 14 a toward the mounting plate 12 in the heating chamber 10.

マイクロ波発生手段19の二つの出力には、それぞれ反射電力を抽出する電力結合器2
7、28を配する。また、発振部20の駆動電源29、初段増幅部21の駆動電源30、主増幅部23、24のそれぞれの駆動電源31、32と、これら駆動電源の動作を制御する制御手段33を配する。また駆動電源31、32の主増幅部23、24への電力供給ラインに電力を供給または停止する切換手段34、35を配する。
The two outputs of the microwave generation means 19 are respectively connected to a power combiner 2 for extracting reflected power.
7 and 28 are arranged. Further, a driving power source 29 for the oscillation unit 20, a driving power source 30 for the first stage amplifying unit 21, driving power sources 31 and 32 for the main amplifying units 23 and 24, and control means 33 for controlling the operation of these driving power sources are arranged. Further, switching means 34 and 35 for supplying or stopping power are arranged on the power supply lines to the main amplifiers 23 and 24 of the drive power supplies 31 and 32.

電力結合器27、28は、結合度が約10dBとし、反射電力の約1/10の電力量を抽出する。この電力信号はそれぞれ、検波ダイオード36、37で整流化しコンデンサ38、39で平滑処理している。コンデンサ38、39の一端には、抵抗40、41を介して切換手段34、35を接続している。なお、抵抗42、43、44は、伝送してくる電力信号を熱損失させる抵抗である。   The power combiners 27 and 28 have a degree of coupling of about 10 dB and extract about 1/10 of the reflected power. The power signals are rectified by the detection diodes 36 and 37 and smoothed by the capacitors 38 and 39, respectively. Switching means 34 and 35 are connected to one end of the capacitors 38 and 39 via resistors 40 and 41. The resistors 42, 43, and 44 are resistors that cause heat loss of the transmitted power signal.

また、マイクロ波発生手段19からの発熱を放熱させる放熱手段45を配する。   Further, a heat dissipating means 45 for dissipating heat generated from the microwave generating means 19 is provided.

以上のように構成されたマイクロ波利用装置について、以下その動作と作用を説明する。   About the microwave utilization apparatus comprised as mentioned above, the operation | movement and an effect | action are demonstrated below.

まず被加熱物を加熱室10に収納し、その加熱条件を操作部(図示していない)から入力し、加熱開始キーを押す。加熱開始信号46を受けた制御手段33の制御信号によりマイクロ波発生手段19が動作を開始する。制御手段33は、駆動電源29を動作させて発振部20に電力を供給する。この時、発振部20の初期の発振周波数は、たとえば2450MHzに設定する電圧信号を供給し、発振が開始する。以降、駆動電源30を動作させて初段増幅部21を動作させ、次に駆動電源31、32をそれぞれ動作させて主増幅部23、24を動作させる。これにより、各主増幅部23、24はそれぞれ200Wから300Wのマイクロ波電力を出力する。   First, an object to be heated is stored in the heating chamber 10, the heating condition is input from an operation unit (not shown), and a heating start key is pressed. In response to the control signal of the control means 33 that has received the heating start signal 46, the microwave generation means 19 starts its operation. The control unit 33 operates the drive power supply 29 to supply power to the oscillation unit 20. At this time, the initial oscillation frequency of the oscillation unit 20 is supplied with a voltage signal set to 2450 MHz, for example, and oscillation starts. Thereafter, the drive power supply 30 is operated to operate the first stage amplifier 21, and then the drive power supplies 31 and 32 are operated to operate the main amplifiers 23 and 24, respectively. Thereby, each main amplification part 23 and 24 outputs the microwave electric power of 200W to 300W, respectively.

このマイクロ波は、同軸線路25、26を伝送して導波管17、18に導かれ開口13a、14aから被加熱物が載置された方向に放射される。加熱室10内に放射されたマイクロ波は、一部が直接被加熱物に入射し被加熱物に吸収され、残りは加熱室10の壁面で反射を繰り返しながら加熱室10内を伝搬する。加熱室10内を伝搬するマイクロ波は、伝搬経路に被加熱物があれば、被加熱物はマイクロ波エネルギをさらに吸収する。加熱室10内に供給されるマイクロ波エネルギが被加熱物に100%吸収されると加熱室10からの反射電力は無くなるが、被加熱物の種類・形状・量が被加熱物を含む加熱室10の電気的特性を決定し、マイクロ波発生手段19の出力インピーダンスと加熱室10のインピーダンスとに基づいて、加熱室10側から同軸線路25、26を逆方向に伝送する反射電力が生じる。   The microwaves are transmitted through the coaxial lines 25 and 26, guided to the waveguides 17 and 18, and radiated from the openings 13a and 14a in the direction in which the object to be heated is placed. Part of the microwave radiated into the heating chamber 10 directly enters the object to be heated and is absorbed by the object to be heated, and the rest propagates through the heating chamber 10 while being repeatedly reflected by the wall surface of the heating chamber 10. If the microwave propagating in the heating chamber 10 has an object to be heated in the propagation path, the object to be heated further absorbs microwave energy. When 100% of the microwave energy supplied into the heating chamber 10 is absorbed by the object to be heated, the reflected power from the heating chamber 10 is lost, but the type, shape, and amount of the object to be heated include the object to be heated. 10 is determined, and based on the output impedance of the microwave generation means 19 and the impedance of the heating chamber 10, reflected power is transmitted from the heating chamber 10 side through the coaxial lines 25 and 26 in the reverse direction.

電力結合器27、28は、この同軸線路25、26をマイクロ波発生手段19側に伝送する反射電力信号と結合し、反射電力量が大きくなり切換手段34、35のコイルを励磁する電圧レベルに到達すると切換手段が作動して、関連する主増幅部23、24への電力供給を遮断する。制御手段33は、主増幅部23、24に電力供給がなされているかどうかの信号を取り込む。   The power couplers 27 and 28 combine the coaxial lines 25 and 26 with the reflected power signal transmitted to the microwave generating means 19 side, and the reflected power amount increases so that the voltage level for exciting the coils of the switching means 34 and 35 is obtained. When it reaches, the switching means operates to cut off the power supply to the associated main amplifying units 23 and 24. The control means 33 takes in a signal indicating whether or not power is supplied to the main amplifying units 23 and 24.

また、制御手段33は、所定の時間間隔とステップ(たとえば、10ミリ秒で1MHz)でもって発振部20の発振周波数を変化させる。この周波数は初期2450MHzから上限値(たとえば2500MHz)に向かって高くし、上限値に到達すると、下限値(たとえば2400MHz)に向かって下げ、下限値に到達すると上限値に向かって高くするように制御する。   Further, the control means 33 changes the oscillation frequency of the oscillation unit 20 at a predetermined time interval and step (for example, 1 MHz for 10 milliseconds). This frequency is increased from the initial 2450 MHz toward the upper limit value (for example, 2500 MHz), and when reaching the upper limit value, the frequency is decreased toward the lower limit value (for example, 2400 MHz). To do.

この発振周波数の変化により、反射電力の量も変化し、反射電力が所定量を超過すると対応する主増幅部の動作が自動的に停止するが、周波数の可変制御を継続させることで、
反射電力が所定値を下回ると再び対応する主増幅部に電力が供給されてその主増幅部が動作し、マイクロ波エネルギが加熱室10に供給される。
Due to this change in oscillation frequency, the amount of reflected power also changes, and when the reflected power exceeds a predetermined amount, the operation of the corresponding main amplification unit automatically stops, but by continuing the variable control of the frequency,
When the reflected power falls below a predetermined value, power is again supplied to the corresponding main amplification unit, the main amplification unit operates, and microwave energy is supplied to the heating chamber 10.

この動作により、反射電力が大きい場合は、主増幅部が動作を停止するので、無用な電力消費を回避し、高い加熱効率で被加熱物を加熱させることができる。また、周波数を可変可能な帯域全体に渡って変化させて加熱を行うことで、加熱室10内での定在波の発生を回避し、被加熱物の均一な加熱を促進させることができる。   With this operation, when the reflected power is large, the main amplifying unit stops operating, so that unnecessary power consumption can be avoided and the object to be heated can be heated with high heating efficiency. Further, by performing heating while changing the frequency over the entire variable band, it is possible to avoid the generation of standing waves in the heating chamber 10 and promote uniform heating of the object to be heated.

また、反射電力による主増幅部の半導体素子の異常動作や熱的破壊を確実に回避させることができ、信頼性の高い半導体素子を用いたマイクロ波発生手段を提供できる。   Further, abnormal operation and thermal destruction of the semiconductor element of the main amplification unit due to the reflected power can be surely avoided, and a microwave generating means using a highly reliable semiconductor element can be provided.

なお、周波数可変の速度は、すべての主増幅部が動作している場合は、速度を遅くし(たとえば1秒で1MHz)、すべての主増幅部が動作を停止している場合は、速度を早くする(たとえば2ミリ秒で1MHz)など、いろいろな可変制御方法を採っても構わない。また、周波数可変範囲も被加熱物や加熱条件に応じて選択指定しても構わない。   The variable frequency speed is slowed down when all the main amplifying units are operating (for example, 1 MHz per second), and when all the main amplifying units are stopped, the speed is changed. Various variable control methods such as increasing the speed (for example, 1 MHz in 2 milliseconds) may be adopted. Also, the frequency variable range may be selected and specified according to the object to be heated and heating conditions.

(実施の形態2)
図3〜図5は、本発明の第2の実施の形態のマイクロ波利用装置の構成図である。
(Embodiment 2)
3-5 is a block diagram of the microwave utilization apparatus of the 2nd Embodiment of this invention.

本実施の形態が第1の実施の形態と相違する点は、放射手段50、51共振周波数を有する構成としたことと、反射電力の信号の大きさに基づいて主増幅部23、24の駆動電源52、53の出力電圧を制御するようにしたものである。図3〜図5において、第1の実施の形態と同一構成あるいは略同一機能のものは同一番号で示す。 This embodiment is different from the first embodiment in that the radiating means 50 and 51 have a resonance frequency and the main amplifiers 23 and 24 are based on the magnitude of the reflected power signal. The output voltages of the drive power supplies 52 and 53 are controlled. 3 to 5, components having the same configuration or substantially the same function as those of the first embodiment are denoted by the same reference numerals.

図3において、加熱室10の左右壁面に形成した傾斜壁面領域13、14と金属壁面15、16とによって、導波管形状17、18を構成している。傾斜壁面領域13、14の加熱室10側に共振周波数を有する放射手段50、51を配する。この放射手段50、51は、図4に上面構成図を示すように、略正方形形状で低誘電損失材料からなる基板50a、51aの片面に円形形状の金属板50b、51bを蒸着して構成している。   In FIG. 3, waveguide shapes 17 and 18 are constituted by the inclined wall surface regions 13 and 14 formed on the left and right wall surfaces of the heating chamber 10 and the metal wall surfaces 15 and 16. Radiating means 50 and 51 having a resonance frequency are disposed on the inclined wall surface regions 13 and 14 on the heating chamber 10 side. The radiating means 50 and 51 are configured by vapor-depositing circular metal plates 50b and 51b on one side of a substrate 50a and 51a made of a low dielectric loss material in a substantially square shape, as shown in the top view of FIG. ing.

そして、放射手段50は、共振周波数がたとえば2435MHz、他方の放射手段51の共振周波数がたとえば2465MHzに調整している。また、図4における記号「×」50c、51cはそれぞれの円形金属板50b、51bへのマイクロ波の給電位置を示し、この位置に一端を接続固定するとともに他端が導波管17、18内に延在する金属棒を配している。   The radiating means 50 is adjusted such that the resonance frequency is 2435 MHz, for example, and the resonance frequency of the other radiating means 51 is 2465 MHz, for example. In addition, the symbols “x” 50c and 51c in FIG. 4 indicate the positions where microwaves are fed to the respective circular metal plates 50b and 51b. One end is connected and fixed to this position, and the other end is in the waveguides 17 and 18. A metal rod extending to

なお、傾斜壁面領域13、14の金属壁面には、金属棒を貫通させる穴を配する。また、基板50a、51aの円形金属板と反対側の面は、金属板を全面に蒸着している。そしてこの全面蒸着した金属板にも金属棒を貫通させる穴を配する。   In addition, the metal wall surface of the inclined wall surface regions 13 and 14 is provided with a hole through which the metal rod penetrates. Further, the metal plate is deposited on the entire surface of the substrate 50a, 51a opposite to the circular metal plate. And the hole which penetrates a metal rod is arranged also in this metal plate vapor-deposited on the whole surface.

またなお、共振周波数の高い放射手段51は、共振周波数の低い放射手段50と略同一の直径からなる円形金属板をベースとし、円形の中心と給電位置51cとを結ぶ線が円形の周囲と交わる点を基準として円縁に切欠51dを施すことで所望の共振周波数に高めている。   Further, the radiating means 51 having a high resonance frequency is based on a circular metal plate having substantially the same diameter as the radiating means 50 having a low resonance frequency, and a line connecting the circular center and the feeding position 51c intersects the circular periphery. A notch 51d is provided on the edge of the circle with the point as a reference to increase the resonance frequency to a desired level.

図5において、方向性結合器54、55は、結合度が約30dBとし、反射電力の約1/1000の電力量を抽出する。この電力信号はそれぞれ、検波ダイオード56、57で整流化しコンデンサ58、59で平滑処理し、制御手段60に入力している。   In FIG. 5, the directional couplers 54 and 55 extract a power amount of about 1/1000 of the reflected power with a degree of coupling of about 30 dB. The power signals are rectified by the detection diodes 56 and 57, smoothed by the capacitors 58 and 59, and input to the control means 60.

以上のように構成されたマイクロ波利用装置について、以下その動作と作用を説明する
About the microwave utilization apparatus comprised as mentioned above, the operation | movement and an effect | action are demonstrated below.

まず被加熱物を加熱室10に収納し、その加熱条件を操作部(図示していない)から入力し、加熱開始キーを押す。加熱開始信号61を受けた制御手段60の制御信号によりマイクロ波発生手段19が動作を開始する。制御手段60は、駆動電源29を動作させて発振部20に電力を供給する。この時、発振部20の初期の発振周波数は、たとえば2450MHzに設定する電圧信号を供給し、発振が開始する。以降、駆動電源30を動作させて初段増幅部21を動作させ、次に駆動電源52、53をそれぞれ動作させて主増幅部23、24を動作させる。これにより、各主増幅部23、24はそれぞれ200Wから300Wのマイクロ波電力を出力する。   First, an object to be heated is stored in the heating chamber 10, the heating condition is input from an operation unit (not shown), and a heating start key is pressed. In response to the control signal of the control means 60 that has received the heating start signal 61, the microwave generation means 19 starts its operation. The control unit 60 operates the drive power supply 29 to supply power to the oscillation unit 20. At this time, the initial oscillation frequency of the oscillation unit 20 is supplied with a voltage signal set to 2450 MHz, for example, and oscillation starts. Thereafter, the drive power supply 30 is operated to operate the first stage amplifier 21, and then the drive power supplies 52 and 53 are operated to operate the main amplifiers 23 and 24, respectively. Thereby, each main amplification part 23 and 24 outputs the microwave electric power of 200W to 300W, respectively.

このマイクロ波は、同軸線路25、26を伝送して導波管17、18に導かれ放射手段50、51から被加熱物が載置された方向に放射される。加熱室10内に放射されたマイクロ波は、一部が直接被加熱物に入射し被加熱物に吸収され、残りは加熱室10の壁面で反射を繰り返しながら加熱室10内を伝搬する。加熱室10内を伝搬するマイクロ波は、伝搬経路に被加熱物があれば、被加熱物はマイクロ波エネルギをさらに吸収する。加熱室10内に供給されるマイクロ波エネルギが被加熱物に100%吸収されると加熱室10からの反射電力は無しになるが、被加熱物の種類・形状・量が被加熱物を含む加熱室10の電気的特性を決定し、マイクロ波発生手段19の出力インピーダンスと加熱室10のインピーダンスとに基づいて、加熱室10側から同軸線路25、26を逆方向に伝送する反射電力が生じる。   This microwave is transmitted to the waveguides 17 and 18 through the coaxial lines 25 and 26, and is emitted from the radiation means 50 and 51 in the direction in which the object to be heated is placed. Part of the microwave radiated into the heating chamber 10 directly enters the object to be heated and is absorbed by the object to be heated, and the rest propagates through the heating chamber 10 while being repeatedly reflected by the wall surface of the heating chamber 10. If the microwave propagating in the heating chamber 10 has an object to be heated in the propagation path, the object to be heated further absorbs microwave energy. When 100% of the microwave energy supplied into the heating chamber 10 is absorbed by the object to be heated, the reflected power from the heating chamber 10 is eliminated, but the type, shape, and amount of the object to be heated include the object to be heated. Based on the output impedance of the microwave generation means 19 and the impedance of the heating chamber 10, the reflected power that transmits the coaxial lines 25 and 26 in the reverse direction is generated from the heating chamber 10 side. .

方向性結合器54、55は、この同軸線路25、26をマイクロ波発生手段19側に伝送する反射電力信号と結合し、反射電力量に比例した電圧信号を制御手段60に入力する。   The directional couplers 54 and 55 combine the coaxial lines 25 and 26 with the reflected power signal transmitted to the microwave generation means 19 side, and input a voltage signal proportional to the reflected power amount to the control means 60.

また、制御手段60は、前述の第1の実施の形態にて説明したのと同様の周波数可変制御信号を駆動電源29に出力する。   Further, the control means 60 outputs a frequency variable control signal similar to that described in the first embodiment to the drive power supply 29.

この発振周波数の変化により、反射電力の量も変化する。制御手段60は、入力される反射電力に対応した信号とを比較する基準レベルを2つ有している。そして、反射電力が基準レベルのひとつである第一の所定量を超過すると制御手段60は、主増幅部23、24の駆動電源52、53の出力電圧を低下させる制御を行う。これにより、対応する主増幅部は増幅率が低下し、低い出力を呈する。また、第一の所定量よりも大きい第二の所定量を超過すると制御手段60は、主増幅部23、24の駆動電源52、53の動作を停止するように制御を行う。このような主増幅部の動作の変化に係わらず制御手段60は周波数の可変制御を継続させることで、反射電力信号レベルに応じた制御指令を駆動電源52、53に出力し、その駆動電力に対応して主増幅部が動作し、マイクロ波エネルギが加熱室10に供給される。   Due to the change in the oscillation frequency, the amount of reflected power also changes. The control means 60 has two reference levels for comparing the signal corresponding to the input reflected power. When the reflected power exceeds a first predetermined amount that is one of the reference levels, the control means 60 performs control to reduce the output voltages of the drive power supplies 52 and 53 of the main amplifiers 23 and 24. As a result, the corresponding main amplifier section has a low amplification factor and a low output. Further, when the second predetermined amount larger than the first predetermined amount is exceeded, the control means 60 performs control so as to stop the operation of the drive power sources 52 and 53 of the main amplifying units 23 and 24. Regardless of such a change in the operation of the main amplification unit, the control means 60 continues the variable control of the frequency to output a control command corresponding to the reflected power signal level to the drive power sources 52 and 53, and to the drive power. Correspondingly, the main amplifying unit operates and microwave energy is supplied to the heating chamber 10.

この動作により、反射電力の大きさに対応して主増幅部を動作させるので、反射電力による主増幅部の半導体素子の異常動作や熱的破壊を確実に回避させることができ、信頼性の高い半導体素子を用いたマイクロ波発生手段を提供できる。また主増幅部は反射電力の大きさに応じた動作をさせることで無用な電力消費を回避し、高い加熱効率で被加熱物を加熱させることができる。さらには、周波数を可変可能な帯域全体に渡って変化させて加熱を行うことで、加熱室10内での定在波の発生を回避し、被加熱物の均一な加熱を促進させることができる。   By this operation, the main amplifying unit is operated in accordance with the magnitude of the reflected power, so that abnormal operation and thermal destruction of the semiconductor element of the main amplifying unit due to the reflected power can be surely avoided, and the reliability is high. A microwave generation means using a semiconductor element can be provided. In addition, the main amplifying unit operates according to the magnitude of the reflected power, thereby avoiding unnecessary power consumption and heating the object to be heated with high heating efficiency. Furthermore, by performing heating by changing the frequency over the entire variable band, generation of standing waves in the heating chamber 10 can be avoided and uniform heating of the object to be heated can be promoted. .

(実施の形態3)
図6は、本発明の第3の実施の形態のマイクロ波利用装置のマイクロ波発生手段まわり
の構成図である。
(Embodiment 3)
FIG. 6 is a configuration diagram around the microwave generation means of the microwave utilization apparatus according to the third embodiment of the present invention.

本実施の形態が第1あるいは第2の実施の形態と相違する点は、発振源を複数備えた点にある。   This embodiment is different from the first or second embodiment in that a plurality of oscillation sources are provided.

すなわち、図6において、第1の発生源であるマイクロ波発生手段70と、第2の発生源であるマイクロ波発生手段71とを有し、それぞれのマイクロ波発生手段70、71は、第1の実施の形態で説明した構成をベースとしている。相違する点は、それぞれの発振部72、73の周波数可変範囲がオーバーラップしない可変範囲となるように構成としている点である。すなわち、発振部72の周波数可変範囲は、たとえば2400〜2450MHzとし、発振部73の周波数可変範囲は、たとえば2450〜2500MHzとしている。また、それぞれのマイクロ波発生手段の駆動電源を制御する第1の制御手段74と第2の制御手段75を配し、さらに全体を制御する制御手段76を配する。   That is, in FIG. 6, it has the microwave generation means 70 which is a 1st generation source, and the microwave generation means 71 which is a 2nd generation source, and each microwave generation means 70 and 71 is 1st. This is based on the configuration described in the embodiment. The difference is that the frequency variable ranges of the oscillation units 72 and 73 are configured to be variable ranges that do not overlap. That is, the frequency variable range of the oscillating unit 72 is, for example, 2400 to 2450 MHz, and the frequency variable range of the oscillating unit 73 is, for example, 2450 to 2500 MHz. In addition, a first control unit 74 and a second control unit 75 for controlling the driving power source of each microwave generation unit are arranged, and a control unit 76 for controlling the whole is arranged.

以上のように構成された複数の発生源を備えたマイクロ波利用装置について、以下その動作と作用を説明する。   The operation and action of the microwave utilization apparatus having a plurality of generation sources configured as described above will be described below.

制御手段76は、加熱開始信号77を受けて第1の制御手段74と第2の制御手段75に動作開始信号を出力し、各制御手段74、75からの制御信号により、マイクロ波発生手段70、71がそれぞれ動作を開始する。前述したような動作開始時の一連の制御により、各主増幅部78、79、80、81はそれぞれ約200Wのマイクロ波電力を出力する。なお、発振部72、73の初期発振周波数は、それぞれたとえば2425MHz、2475MHzとしている。また周波数可変は、それぞれの可変範囲の上限に向かって変化させた後、下限に向かって変化させ、さらに上限に向かって変化させる制御を継続する。   The control means 76 receives the heating start signal 77 and outputs an operation start signal to the first control means 74 and the second control means 75, and the microwave generation means 70 in accordance with the control signals from the control means 74 and 75. 71 start operation. The main amplifiers 78, 79, 80, 81 each output about 200 W of microwave power by a series of controls at the start of operation as described above. The initial oscillation frequencies of the oscillating units 72 and 73 are, for example, 2425 MHz and 2475 MHz, respectively. Further, the frequency variable is changed toward the upper limit of each variable range, then changed toward the lower limit, and further controlled to change toward the upper limit.

発生したマイクロ波は、4本の同軸線路をそれぞれ伝送し4個の放射手段(図示していない)から加熱室内に放射される。このとき、加熱室内には異なる周波数のマイクロ波が伝搬する状態となっている。また、加熱室側から同軸線路を逆方向に伝送する反射電力に結合する電力結合器82、83、84、85により、反射電力が所定値を超えた場合、対象の主増幅部への電力供給が停止する。このような主増幅部の動作の変化に係わらず各制御手段74、75は周波数の可変制御を継続させることで、反射電力レベルに応じてそれぞれの主増幅部が動作し、マイクロ波エネルギが加熱室に供給される。   The generated microwaves are transmitted through four coaxial lines, and are radiated from the four radiating means (not shown) into the heating chamber. At this time, microwaves having different frequencies propagate in the heating chamber. In addition, when the reflected power exceeds a predetermined value by the power couplers 82, 83, 84, 85 coupled to the reflected power transmitted in the reverse direction through the coaxial line from the heating chamber side, power is supplied to the target main amplification unit. Stops. Regardless of the change in the operation of the main amplifier, the control means 74 and 75 continue the variable control of the frequency, so that the main amplifier operates according to the reflected power level, and the microwave energy is heated. Supplied to the chamber.

この動作により、反射電力が所定値を超えると対象の主増幅部の動作を停止させるので、反射電力による主増幅部の半導体素子の異常動作や熱的破壊を確実に回避させることができ、信頼性の高い半導体素子を用いたマイクロ波発生手段を提供できる。また主増幅部は反射電力の大きさに応じた動作をさせることで無用な電力消費を回避し、高い加熱効率で被加熱物を加熱させることができる。さらには、加熱室内に異なる周波数のマイクロ波を供給して加熱を行うことで、加熱室内での定在波の発生を回避し、被加熱物の均一な加熱をさらに促進させることができる。   By this operation, when the reflected power exceeds a predetermined value, the operation of the target main amplification unit is stopped, so that abnormal operation or thermal destruction of the semiconductor element of the main amplification unit due to the reflected power can be surely avoided, and A microwave generating means using a highly reliable semiconductor element can be provided. In addition, the main amplifying unit operates according to the magnitude of the reflected power, thereby avoiding unnecessary power consumption and heating the object to be heated with high heating efficiency. Furthermore, by performing heating by supplying microwaves having different frequencies into the heating chamber, generation of standing waves in the heating chamber can be avoided, and uniform heating of the object to be heated can be further promoted.

なお、放射手段は、第1および第2の実施の形態で説明した放射手段を様々に組合せて利用できる。また、たとえば左右と上下の4つの壁面に放射手段を配設する構成とすることもできる。また、周波数の可変のスピードは、それぞれの発振源で異ならした制御を採ってもよい。   The radiating means can be used in various combinations with the radiating means described in the first and second embodiments. Further, for example, the radiating means may be arranged on the four wall surfaces on the left, right, and upper and lower sides. The variable speed of the frequency may be controlled differently for each oscillation source.

以上のように本発明によれば、周波数可変可能なマイクロ波発生手段を用い、被加熱物の均一な加熱の促進と高い加熱効率とを両立させたマイクロ波利用装置の構成としたことにより、市販の電子レンジのごとき食品加熱はもとより、洗浄装置、乾燥装置、半導体製
造装置などの工業分野での加熱装置にも展開することができる。
As described above, according to the present invention, by using the microwave generating means capable of changing the frequency, the microwave utilization device is configured to promote both uniform heating of the object to be heated and high heating efficiency. In addition to food heating such as commercially available microwave ovens, it can be applied to heating devices in industrial fields such as cleaning devices, drying devices, and semiconductor manufacturing devices.

本発明の実施の形態1のマイクロ波利用装置の構成図Configuration diagram of microwave utilization apparatus of embodiment 1 of the present invention 同マイクロ波利用装置のマイクロ波発生手段の構成ブロック図Configuration block diagram of microwave generation means of the microwave utilization apparatus 本発明の実施の形態2のマイクロ波利用装置の構成図The block diagram of the microwave utilization apparatus of Embodiment 2 of this invention 同マイクロ波利用装置の放射手段の構成図Configuration diagram of radiation means of the microwave utilization device 同マイクロ波利用装置のマイクロ波発生手段の構成ブロック図Configuration block diagram of microwave generation means of the microwave utilization apparatus 本発明の実施の形態3のマイクロ波発生手段の構成ブロック図Configuration block diagram of microwave generation means of Embodiment 3 of the present invention

10 加熱室
12 載置板(載置手段)
13、14 傾斜壁面(傾斜壁面領域)
13a、14a 放射手段
19、70、71 マイクロ波発生手段
20 発振部(周波数可変)
21、23、24 増幅部
23、24、78、79、80、81 並列駆動の増幅部
27、28、82、83、84、85 電力結合器(反射電力と結合)
33、60、74、75、76 制御手段
34、35 切換手段
50、51 共振周波数の異なる放射手段
54、55 方向性結合器(反射電力と結合)
72、73 発振周波数がオーバーラップしない発振部
10 heating chamber 12 mounting plate (mounting means)
13, 14 Inclined wall surface (inclined wall surface region)
13a, 14a Radiating means 19, 70, 71 Microwave generating means 20 Oscillator (variable frequency)
21, 23, 24 Amplifier 23, 24, 78, 79, 80, 81 Parallel drive amplifier 27, 28, 82, 83, 84, 85 Power combiner (coupled with reflected power)
33, 60, 74, 75, 76 Control means 34, 35 Switching means 50, 51 Radiation means with different resonance frequencies 54, 55 Directional coupler (coupled with reflected power)
72, 73 Oscillators whose oscillation frequencies do not overlap

Claims (7)

被加熱物が収納される加熱室と、
前記加熱室へ供給するマイクロ波を放射する複数の放射手段と、
半導体素子を用いた発振部と増幅部とで構成し前記増幅部は前記複数の放射手段にそれぞれ伝送させるマイクロ波を出力するよう構成した周波数可変機能付マイクロ波発生手段と、
前記放射手段から前記増幅部側に反射するそれぞれの反射電力によって動作する前記増幅部の駆動電力供給線路に設けた複数の切換手段と、
前記マイクロ波発生手段が発生する発振周波数を所定の時間間隔とステップでもって可変制御する制御手段とを有し、
前記制御手段の周波数可変制御動作に伴う所定量を超える反射電力によって前記切換手段を作動させて、対象の放射手段に接続された増幅部の駆動電力供給を停止させ、前記増幅部の駆動電力供給が停止された後も周波数可変制御は継続し、反射電力が所定値を下回ると前記増幅部に駆動電力供給がされて被加熱物の加熱を実行するマイクロ波利用装置。
A heating chamber in which an object to be heated is stored;
A plurality of radiation means for radiating microwaves to be supplied to the heating chamber;
A microwave generating means with a frequency variable function configured to output a microwave to be transmitted to each of the plurality of radiating means;
A plurality of switching means provided on the drive power supply line of the amplifying unit that operates by each reflected power reflected from the radiating unit to the amplifying unit side;
Control means for variably controlling the oscillation frequency generated by the microwave generating means at predetermined time intervals and steps;
The switching means is operated by reflected power exceeding a predetermined amount accompanying the frequency variable control operation of the control means, the drive power supply of the amplification unit connected to the target radiation means is stopped , and the drive power supply of the amplification unit The variable frequency control continues even after the operation is stopped, and when the reflected power falls below a predetermined value, driving power is supplied to the amplifying unit to heat the object to be heated.
被加熱物が収納される加熱室と、
前記加熱室へ供給するマイクロ波を放射する複数の放射手段と、
半導体素子を用いた発振部と増幅部とで構成し前記増幅部は前記複数の放射手段にそれぞれ伝送させるマイクロ波を出力するよう構成した周波数可変機能付マイクロ波発生手段と、
前記複数の放射手段のそれぞれから前記増幅部側に伝送されるマイクロ波反射電力を検出する手段と、
前記マイクロ波発生手段が発生する発振周波数を所定の時間間隔とステップでもって可変制御する制御手段とを有し、
前記制御手段が周波数可変制御の動作中に制御手段は前記反射電力を検出する手段が検出した反射電力量に比例した電圧信号を受け取り、入力された前記電圧信号を2つの基準レベルと比較し、第一の所定量を超える反射電力になると対象の放射手段に接続された増幅部の駆動電圧を低下させ、前記第一の所定量よりも大きい第二の所定量を超過すると対象の放射手段に接続された増幅部の駆動電力供給を停止させ、前記増幅部の駆動電力供給制御後も周波数可変制御は継続し、可変制御後に検出する反射電力量に応じて前記増幅部の
駆動電力を制御して被加熱物の加熱を実行するマイクロ波利用装置。
A heating chamber in which an object to be heated is stored;
A plurality of radiation means for radiating microwaves to be supplied to the heating chamber;
A microwave generating means with a frequency variable function configured to output a microwave to be transmitted to each of the plurality of radiating means;
Means for detecting microwave reflected power transmitted from each of the plurality of radiating means to the amplifying unit side;
Control means for variably controlling the oscillation frequency generated by the microwave generating means at predetermined time intervals and steps;
During the operation of the frequency variable control by the control means, the control means receives a voltage signal proportional to the amount of reflected power detected by the means for detecting the reflected power, compares the input voltage signal with two reference levels, When the reflected power exceeds the first predetermined amount, the driving voltage of the amplifying unit connected to the target radiating means is reduced, and when the second predetermined amount larger than the first predetermined amount is exceeded, the target radiating means is The drive power supply of the connected amplifying unit is stopped , the frequency variable control is continued even after the drive power supply control of the amplifying unit, and according to the amount of reflected power detected after the variable control,
A microwave utilization device that controls heating power to heat an object to be heated.
周波数可変機能付マイクロ波発生手段を複数とし、それぞれの前記マイクロ波発生手段が発生する発振周波数を所定の時間間隔とステップでもって可変制御する複数の制御手段を有する構成とした請求項1または2に記載のマイクロ波利用装置。 3. A structure comprising a plurality of frequency variable function microwave generating means, and a plurality of control means for variably controlling the oscillation frequency generated by each of the microwave generating means in predetermined time intervals and steps. The microwave utilization apparatus as described in. 制御手段は、それぞれの増幅部に電力供給がなされているかどうかの信号を取り込み、前記増幅部のすべてが動作している場合は周波数可変の速度を遅くし、前記増幅部のすべてが動作を停止している場合は周波数可変の速度を早くする請求項1乃至3のいずれか1項に記載のマイクロ波利用装置。 The control means captures a signal indicating whether power is supplied to each amplification unit, and when all the amplification units are operating, slows the frequency variable speed, and stops all the amplification units from operating. The microwave utilization apparatus according to any one of claims 1 to 3, wherein the frequency variable speed is increased when the frequency is changed. 複数の放射手段は、被加熱物を載置する載置手段の方向にマイクロ波を放射するように構成した請求項1乃至3のいずれか1項に記載のマイクロ波利用装置。 The microwave utilization apparatus according to any one of claims 1 to 3, wherein the plurality of radiating means are configured to radiate microwaves in a direction of a placing means for placing an object to be heated. 複数の放射手段は、それぞれ異なる共振周波数を有した請求項1乃至3のいずれか1項に記載のマイクロ波利用装置。 The microwave utilization apparatus according to any one of claims 1 to 3, wherein the plurality of radiation means have different resonance frequencies. 複数のマイクロ波発生手段は、それぞれの発振部の発振周波数をオーバーラップさせない構成とした請求項3に記載のマイクロ波利用装置。
4. The microwave utilization device according to claim 3, wherein the plurality of microwave generation means are configured not to overlap the oscillation frequencies of the respective oscillation units.
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