JP5164745B2 - 記憶装置 - Google Patents
記憶装置 Download PDFInfo
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- JP5164745B2 JP5164745B2 JP2008219066A JP2008219066A JP5164745B2 JP 5164745 B2 JP5164745 B2 JP 5164745B2 JP 2008219066 A JP2008219066 A JP 2008219066A JP 2008219066 A JP2008219066 A JP 2008219066A JP 5164745 B2 JP5164745 B2 JP 5164745B2
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Classifications
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- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0033—Disturbance prevention or evaluation; Refreshing of disturbed memory data
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
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- G—PHYSICS
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- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
- G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
- G11C16/3431—Circuits or methods to detect disturbed nonvolatile memory cells, e.g. which still read as programmed but with threshold less than the program verify threshold or read as erased but with threshold greater than the erase verify threshold, and to reverse the disturbance via a refreshing programming or erasing step
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Memories (AREA)
- Thin Film Transistor (AREA)
- Dram (AREA)
Priority Applications (1)
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|---|---|---|---|
| JP2008219066A JP5164745B2 (ja) | 2007-09-03 | 2008-08-28 | 記憶装置 |
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| JP2007227386 | 2007-09-03 | ||
| JP2007227386 | 2007-09-03 | ||
| JP2008219066A JP5164745B2 (ja) | 2007-09-03 | 2008-08-28 | 記憶装置 |
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| JP2009080922A JP2009080922A (ja) | 2009-04-16 |
| JP2009080922A5 JP2009080922A5 (enExample) | 2011-09-15 |
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| WO2010071183A1 (en) * | 2008-12-19 | 2010-06-24 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US20110156012A1 (en) * | 2009-11-12 | 2011-06-30 | Sony Corporation | Double layer hardmask for organic devices |
| KR101708607B1 (ko) * | 2009-11-20 | 2017-02-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| WO2011125455A1 (en) | 2010-04-09 | 2011-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Oxide semiconductor memory device |
| WO2011145634A1 (en) | 2010-05-21 | 2011-11-24 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| US9129703B2 (en) * | 2010-08-16 | 2015-09-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for driving semiconductor memory device |
| WO2018220471A1 (ja) * | 2017-06-02 | 2018-12-06 | 株式会社半導体エネルギー研究所 | 記憶装置及びその動作方法 |
| US11527281B2 (en) * | 2021-03-30 | 2022-12-13 | Micron Technology, Inc. | Signal buffer circuit |
| US20240237367A1 (en) * | 2021-12-29 | 2024-07-11 | Boe Technology Group Co., Ltd. | Display substrate, manufacturing method and display device |
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| US3833894A (en) * | 1973-06-20 | 1974-09-03 | Ibm | Organic memory device |
| US4763183A (en) * | 1984-08-01 | 1988-08-09 | American Telephone And Telegraph Co., At&T Bell Laboratories | Semiconductor-on-insulator (SOI) devices and SOI IC fabrication method |
| US5242851A (en) | 1991-07-16 | 1993-09-07 | Samsung Semiconductor, Inc. | Programmable interconnect device and method of manufacturing same |
| JPH08116109A (ja) | 1994-10-14 | 1996-05-07 | Matsushita Giken Kk | 有機薄膜スイッチング・メモリー複合素子の製造方法および有機薄膜スイッチング・メモリー複合素子 |
| US5583819A (en) | 1995-01-27 | 1996-12-10 | Single Chip Holdings, Inc. | Apparatus and method of use of radiofrequency identification tags |
| US6720866B1 (en) * | 1999-03-30 | 2004-04-13 | Microchip Technology Incorporated | Radio frequency identification tag device with sensor input |
| US6654275B2 (en) * | 2001-03-15 | 2003-11-25 | Micron Technology, Inc. | SRAM cell with horizontal merged devices |
| US6534841B1 (en) | 2001-12-14 | 2003-03-18 | Hewlett-Packard Company | Continuous antifuse material in memory structure |
| JP4719852B2 (ja) | 2002-10-18 | 2011-07-06 | シンボル テクノロジーズ， インコーポレイテッド | パッシブｒｆｉｄタグの不必要な再交渉を最小化するためのシステムおよび方法 |
| US7504663B2 (en) * | 2004-05-28 | 2009-03-17 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device with a floating gate electrode that includes a plurality of particles |
| US7067868B2 (en) * | 2004-09-29 | 2006-06-27 | Freescale Semiconductor, Inc. | Double gate device having a heterojunction source/drain and strained channel |
| US7791066B2 (en) | 2005-05-20 | 2010-09-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof and method for writing memory element |
| JP2006352104A (ja) * | 2005-05-20 | 2006-12-28 | Semiconductor Energy Lab Co Ltd | 半導体装置、及び半導体装置の作製方法 |
| US7700984B2 (en) * | 2005-05-20 | 2010-04-20 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device including memory cell |
| CN101305465B (zh) | 2005-11-09 | 2010-06-09 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| JP4203506B2 (ja) * | 2006-01-13 | 2009-01-07 | シャープ株式会社 | 不揮発性半導体記憶装置及びその書き換え方法 |
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2008
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- 2008-09-02 US US12/202,516 patent/US8018755B2/en not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| US20090059650A1 (en) | 2009-03-05 |
| US8018755B2 (en) | 2011-09-13 |
| JP2009080922A (ja) | 2009-04-16 |
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