JP5153399B2 - Substrate case and processing method - Google Patents

Substrate case and processing method Download PDF

Info

Publication number
JP5153399B2
JP5153399B2 JP2008072496A JP2008072496A JP5153399B2 JP 5153399 B2 JP5153399 B2 JP 5153399B2 JP 2008072496 A JP2008072496 A JP 2008072496A JP 2008072496 A JP2008072496 A JP 2008072496A JP 5153399 B2 JP5153399 B2 JP 5153399B2
Authority
JP
Japan
Prior art keywords
substrate
groove
end support
pair
substrate case
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2008072496A
Other languages
Japanese (ja)
Other versions
JP2009231386A (en
Inventor
俊明 馬場
直記 吉村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP2008072496A priority Critical patent/JP5153399B2/en
Publication of JP2009231386A publication Critical patent/JP2009231386A/en
Application granted granted Critical
Publication of JP5153399B2 publication Critical patent/JP5153399B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Weting (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Description

本発明は、基板を支持する基板ケース及びそれを用いて基板に薬液処理を施す処理方法に関する。   The present invention relates to a substrate case for supporting a substrate and a processing method for performing chemical treatment on a substrate using the substrate case.

一般的に、半導体装置の製造工程において基板に薬液処理を施す場合、複数の基板が収納された基板ケースを薬液中に浸漬する。複数の基板それぞれは、基板ケースの一対の内壁に形成された一対の縦溝に差し込まれる。これにより、複数の基板は、基板ケース内において互いに平行に立たされた状態で支持される。   Generally, when a chemical process is performed on a substrate in a manufacturing process of a semiconductor device, a substrate case containing a plurality of substrates is immersed in the chemical solution. Each of the plurality of substrates is inserted into a pair of vertical grooves formed on a pair of inner walls of the substrate case. As a result, the plurality of substrates are supported in a state of standing parallel to each other in the substrate case.

ここで、基板ケースを薬液中から引き上げる際に、互いに隣接する基板どうしが貼りつくことを抑制するために、複数の基板それぞれの間に仕切り治具を設けることが提案されている(例えば、特許文献1参照)。
特開2000−208604号公報
Here, in order to prevent the substrates adjacent to each other from sticking when the substrate case is pulled out from the chemical solution, it has been proposed to provide a partitioning jig between each of the plurality of substrates (for example, patents). Reference 1).
JP 2000-208604 A

しかしながら、特許文献1に記載の基板ケースを薬液中から引き上げる際、基板が縦溝の側面あるいは仕切り治具と貼りつくことにより、基板に割れや反りが生じるという問題があった。   However, when the substrate case described in Patent Document 1 is pulled up from the chemical solution, there is a problem that the substrate is cracked or warped due to sticking to the side surface of the longitudinal groove or the partitioning jig.

本発明は、上述の状況に鑑みてなされたものであり、基板に割れや反りが発生することを抑制できる基板ケース及びそれを用いて基板に薬液処理を施す処理方法を提供することを目的とする。   The present invention has been made in view of the above-described situation, and an object of the present invention is to provide a substrate case that can prevent the substrate from being cracked or warped, and a processing method for performing chemical treatment on the substrate using the substrate case. To do.

本発明の一の特徴に係る基板ケースは、基板を所定の方向に対して略垂直に支持する基板ケースであって、基板の下端部を支持する下側溝を有する下端支持部と、基板の上端部を支持する上側溝を有する上端支持部と、基板の両側端部を支持する縦溝をそれぞれ有する一対の側端支持部とを備え、縦溝は、上下方向に沿って延び、縦溝は、テーパー状に形成されており、縦溝が有する一対の側面それぞれは、所定の方向に対して第1の角度を有し、第1の角度は、所定の方向における基板の撓みに基づいて決定されることを要旨とする。   A substrate case according to one aspect of the present invention is a substrate case that supports a substrate substantially perpendicularly to a predetermined direction, and includes a lower end support portion having a lower groove that supports a lower end portion of the substrate, and an upper end of the substrate. And a pair of side end support portions each having a longitudinal groove supporting both side end portions of the substrate, the longitudinal groove extending along the vertical direction, and the longitudinal groove is Each of the pair of side surfaces of the longitudinal groove that has a taper shape has a first angle with respect to a predetermined direction, and the first angle is determined based on the bending of the substrate in the predetermined direction. The gist is that

本発明の一の特徴に係る基板ケースによれば、基板ケースを薬液中から引き上げる際に、基板が縦溝の一対の側面それぞれに貼りつかない角度に第1の角度を決定することができる。従って、基板が縦溝の一対の側面それぞれに貼りつくことを抑制できる。その結果、基板に割れや反りが発生することを抑制できる。   According to the substrate case according to one feature of the present invention, when the substrate case is pulled up from the chemical solution, the first angle can be determined as an angle at which the substrate does not stick to each of the pair of side surfaces of the longitudinal groove. Therefore, it can suppress that a board | substrate sticks to each of a pair of side surface of a vertical groove. As a result, it is possible to prevent the substrate from being cracked or warped.

本発明の一の特徴において、縦溝は、縦溝が有する一対の側面それぞれに繋がる平面状の底面を有していてもよい。   In one aspect of the present invention, the vertical groove may have a flat bottom surface connected to each of the pair of side surfaces of the vertical groove.

本発明の一の特徴において、下側溝及び上側溝の少なくとも一方の溝は、テーパー状に形成されており、一方の溝が有する一対の側面は、所定の方向に対して第2の角度を有しており、第2の角度は、所定の方向における基板の撓みに応じて決定されてもよい。   In one feature of the present invention, at least one of the lower groove and the upper groove is formed in a tapered shape, and the pair of side surfaces of the one groove has a second angle with respect to a predetermined direction. The second angle may be determined according to the bending of the substrate in the predetermined direction.

本発明の一の特徴において、下側溝は、下側溝が有する一対の側面に繋がる平面状の底面を有していてもよい。   In one aspect of the present invention, the lower groove may have a planar bottom surface that is connected to a pair of side surfaces of the lower groove.

本発明の一の特徴において、下端支持部は、所定の方向に沿って延びる第1下端支持部及び第2下端支持部を含み、第1下端支持部及び第2下端支持部それぞれは、下側溝を有していてもよい。   In one aspect of the present invention, the lower end support portion includes a first lower end support portion and a second lower end support portion that extend along a predetermined direction, and each of the first lower end support portion and the second lower end support portion includes a lower groove. You may have.

本発明の一の特徴において、下側溝及び上側溝は、基板の所定の方向における位置ずれを所定の範囲に制約してもよい。   In one aspect of the present invention, the lower groove and the upper groove may restrict the positional deviation of the substrate in a predetermined direction to a predetermined range.

本発明の一の特徴に係る処理方法は、基板に薬液処理を施す処理方法であって、基板を基板ケース内に立てて収納する工程Aと、基板ケースを薬液中に浸漬する工程Bと、基板ケースを薬液中から取り出す工程Cとを備え、基板ケースは、基板の下端部を支持する下側溝を有する下端支持部と、基板の上端部を支持する上側溝を有する上端支持部と、基板の両側端部を支持する縦溝をそれぞれ有する一対の側端支持部とを備え、縦溝は、上下方向に沿って延び、縦溝は、テーパー状に形成されており、縦溝が有する一対の側面それぞれは、基板に垂直な方向に対して第1の角度を有し、第1の角度は、基板に垂直な方向における基板の撓みに基づいて決定されていることを要旨とする。     A processing method according to one aspect of the present invention is a processing method for performing chemical treatment on a substrate, and includes a step A in which a substrate is stood and stored in a substrate case, a step B in which the substrate case is immersed in a chemical solution, A step C for removing the substrate case from the chemical solution, the substrate case including a lower end support portion having a lower groove for supporting the lower end portion of the substrate, an upper end support portion having an upper groove for supporting the upper end portion of the substrate, and a substrate And a pair of side end support portions each having a longitudinal groove for supporting both side end portions thereof, the longitudinal groove extending along the vertical direction, the longitudinal groove being formed in a tapered shape, and the pair of longitudinal grooves having Each of the side surfaces has a first angle with respect to a direction perpendicular to the substrate, and the first angle is determined based on the deflection of the substrate in the direction perpendicular to the substrate.

本発明によれば、基板に割れや反りが発生することを抑制できる基板ケース及びそれを用いて基板に薬液処理を施す処理方法を提供することができる。   ADVANTAGE OF THE INVENTION According to this invention, the board | substrate case which can suppress that a crack and a curvature generate | occur | produce in a board | substrate and the processing method which performs a chemical | medical solution process to a board | substrate using it can be provided.

次に、図面を用いて、本発明の実施形態について説明する。以下の図面の記載において、同一又は類似の部分には、同一又は類似の符号を付している。ただし、図面は模式的なものであり、各寸法の比率等は現実のものとは異なることに留意すべきである。従って、具体的な寸法等は以下の説明を参酌して判断すべきものである。又、図面相互間においても互いの寸法の関係や比率が異なる部分が含まれていることは勿論である。   Next, embodiments of the present invention will be described with reference to the drawings. In the following description of the drawings, the same or similar parts are denoted by the same or similar reference numerals. However, it should be noted that the drawings are schematic and ratios of dimensions and the like are different from actual ones. Accordingly, specific dimensions and the like should be determined in consideration of the following description. Moreover, it is a matter of course that portions having different dimensional relationships and ratios are included between the drawings.

(基板ケースの構成)
本発明の実施形態に係る基板ケース1の構成について、図1〜3を参照しながら説明する。図1は、基板ケース1の上面図である。図2は、図1に示す上端支持部10を取外した状態での基板ケース1の上面図である。図3は、図1のA−A断面図である。
(Configuration of board case)
The configuration of the substrate case 1 according to the embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a top view of the substrate case 1. FIG. 2 is a top view of the substrate case 1 with the upper end support 10 shown in FIG. 1 removed. 3 is a cross-sectional view taken along the line AA in FIG.

図1及び図2に示すように、基板ケース1は、上端支持部10、側端支持部20、固定部30及び下端支持部40を備える。   As shown in FIGS. 1 and 2, the substrate case 1 includes an upper end support portion 10, a side end support portion 20, a fixing portion 30, and a lower end support portion 40.

基板ケース1は、半導体製造装置の製造工程において、例えば、ガラス基板や半導体ウェハなどの基板Sに対して薬液処理を施す際に用いられる。従って、基板ケース1は、薬液処理に用いられる薬液に対する耐性を有する材料によって構成される。このような材料としては、例えば、酸性及びアルカリ性の薬液に対する耐性を有するPFA(Tetrafluoroethylene perfluoroalkoxy vinyl ether copolymer)やPTFE(Polytetrafluoroethylene)などのフッ素系樹脂、或いはPEEK(Polyether ether ketone)などを用いることができる。複数の基板Sは、基板ケース1内において、配列方向に従って配列され、互いに略平行に支持される。なお、基板ケース1は、基板Sに薬液処理を施す際に限らず、基板Sを搬送する際の収納ケースとして用いることもできる。   The substrate case 1 is used when a chemical treatment is performed on a substrate S such as a glass substrate or a semiconductor wafer in a manufacturing process of a semiconductor manufacturing apparatus. Therefore, the substrate case 1 is made of a material having resistance to the chemical used for the chemical processing. As such a material, for example, a fluororesin such as PFA (Tetrafluoroethylene perfluoroalkoxy vinyl ether copolymer) and PTFE (Polytetrafluoroethylene) having resistance to acidic and alkaline chemicals, or PEEK (Polyether ether ketone) can be used. . The plurality of substrates S are arranged in the substrate case 1 according to the arrangement direction and are supported substantially parallel to each other. The substrate case 1 can be used not only when the substrate S is subjected to the chemical treatment, but also as a storage case when the substrate S is transported.

上端支持部10は、第1上端支持部10aと第2上端支持部10b(以下、上端支持部10と併称する。)とを含む。上端支持部10は、基板Sの上端部を支持しており、基板ケース1が薬液中に浸漬された際に基板Sが浮き上がることを抑止する。上端支持部10は、配列方向に沿って配置される。上端支持部10は、固定具15を用いることにより、後述する固定部30に取外し可能に固定される。基板Sは、図2に示すように、上端支持部10を取外した状態で、基板ケース1の上方から挿入される。   The upper end support portion 10 includes a first upper end support portion 10a and a second upper end support portion 10b (hereinafter also referred to as the upper end support portion 10). The upper end support part 10 supports the upper end part of the substrate S, and suppresses the substrate S from floating when the substrate case 1 is immersed in the chemical solution. The upper end support part 10 is arrange | positioned along the sequence direction. The upper end support part 10 is detachably fixed to a fixing part 30 described later by using a fixing tool 15. As shown in FIG. 2, the substrate S is inserted from above the substrate case 1 with the upper end support 10 removed.

上端支持部10は、配列方向に沿って連なる複数の上側溝10Gを有する。上側溝10Gは、テーパー状に形成される。基板Sの上端部は、上側溝10Gの内側に収められることで支持される(図4参照)。なお、本実施形態において、上側溝10Gは、上端支持部10の軸心を中心として環状に形成されているが、上端支持部10の下面側のみに形成されていてもよい。   The upper end support portion 10 includes a plurality of upper grooves 10G that are continuous in the arrangement direction. The upper groove 10G is formed in a tapered shape. The upper end portion of the substrate S is supported by being housed inside the upper groove 10G (see FIG. 4). In the present embodiment, the upper groove 10 </ b> G is formed in an annular shape centering on the axis of the upper end support portion 10, but may be formed only on the lower surface side of the upper end support portion 10.

側端支持部20は、互いに対向する一対の第1側端支持部20aと第2側端支持部20b(以下、側端支持部20と併称する。)とを含む。側端支持部20は、基板Sの側端部を支持しており、上面視で配列方向に略直交する直交方向における基板Sの動きを制約する。側端支持部20の配列方向両端部は、固定部30に固定される。薬液は、上端支持部10どうしの間、又は、上端支持部10と側端支持部20との間を通過する。   The side end support portion 20 includes a pair of first side end support portions 20a and second side end support portions 20b (hereinafter also referred to as side end support portions 20) facing each other. The side end support part 20 supports the side end part of the substrate S, and restricts the movement of the substrate S in the orthogonal direction substantially orthogonal to the arrangement direction when viewed from above. Both end portions in the arrangement direction of the side end support portion 20 are fixed to the fixing portion 30. The chemical solution passes between the upper end support portions 10 or between the upper end support portion 10 and the side end support portion 20.

側端支持部20は、配列方向に沿って連なる複数の縦溝20Gを有する。縦溝20Gは、テーパー状に形成される。縦溝20Gは、上下方向に沿って延びる。基板Sの側端部は、縦溝20Gの内側に収められることで支持される(図6参照)。   The side end support part 20 has a plurality of vertical grooves 20G that are continuous along the arrangement direction. The vertical groove 20G is formed in a tapered shape. The vertical groove 20G extends along the vertical direction. The side edge part of the board | substrate S is supported by being stored inside the vertical groove 20G (refer FIG. 6).

下端支持部40は、第1下端支持部40aと第2下端支持部40b(以下、下端支持部40と併称する。)とを含む。下端支持部40は、基板Sの下端部を支持する。下端支持部40の両端部は、固定部30に固定される。薬液は、下端支持部40どうしの間、又は、下端支持部40と側端支持部20との間を通過する。   The lower end support portion 40 includes a first lower end support portion 40a and a second lower end support portion 40b (hereinafter also referred to as the lower end support portion 40). The lower end support part 40 supports the lower end part of the substrate S. Both end portions of the lower end support portion 40 are fixed to the fixing portion 30. The chemical solution passes between the lower end support portions 40 or between the lower end support portion 40 and the side end support portion 20.

下端支持部40は、配列方向に沿って連なる複数の下側溝40Gを有する。下側溝40Gは、テーパー状に形成される。基板Sの下端部は、下側溝40G内に載置される(図5(b)参照)。   The lower end support part 40 has a plurality of lower grooves 40G that are continuous in the arrangement direction. The lower groove 40G is formed in a tapered shape. The lower end portion of the substrate S is placed in the lower groove 40G (see FIG. 5B).

固定部30は、互いに対向する一対の第1固定部30aと第2固定部30b(以下、固定部30と併称する。)とを含む。固定部30は、側端支持部20と下端支持部40それぞれの端部を固定する。   The fixing part 30 includes a pair of first fixing part 30a and second fixing part 30b (hereinafter also referred to as the fixing part 30) facing each other. The fixing portion 30 fixes the end portions of the side end support portion 20 and the lower end support portion 40.

以上より、基板Sは、図3に示すように、上側溝10G、縦溝20G及び下側溝40Gによって、基板ケース1内で略垂直に支持される。   As described above, the substrate S is supported substantially vertically in the substrate case 1 by the upper groove 10G, the vertical groove 20G, and the lower groove 40G, as shown in FIG.

(上側溝の構成)
次に、上端支持部10が有する上側溝10Gの構成について、図4を参照しながら説明する。図4は、図1のB−B線における第1上端支持部10aの拡大断面図である。
(Upper groove configuration)
Next, the configuration of the upper groove 10G included in the upper end support portion 10 will be described with reference to FIG. FIG. 4 is an enlarged cross-sectional view of the first upper end support portion 10a taken along line BB in FIG.

上側溝10Gは、図4に示すように、上方に向かってテーパー状に形成される。基板Sが上側溝10Gの内側に収められることによって、基板Sの配列方向における位置ずれは所定の範囲に抑制される。   As shown in FIG. 4, the upper groove 10G is tapered upward. By accommodating the substrate S inside the upper groove 10G, the positional deviation in the arrangement direction of the substrates S is suppressed within a predetermined range.

ここで、基板Sが下側溝40Gに載置された場合、上側溝10Gの深部と基板Sとの間隔αは、間隔β以上であることが好ましい。すなわち、上端支持部10は、基板Sを押さえつけないことが好ましい。例えば、約104mm角、約70μm厚の単結晶シリコン基板を用いる場合には、間隔αを約0.5mm、上側溝10Gの幅γを約4.75mm、上側溝10Gの高さδを約4.00mmに設定することができる。 Here, when the substrate S is placed in the lower groove 40G, the distance α between the deep portion of the upper groove 10G and the substrate S is preferably equal to or larger than the distance β. That is, it is preferable that the upper end support portion 10 does not hold down the substrate S. For example, when a single crystal silicon substrate of about 104 mm square and about 70 μm thickness is used, the interval α is about 0.5 mm, the width γ 1 of the upper groove 10G is about 4.75 mm, and the height δ 1 of the upper groove 10G is set. It can be set to about 4.00 mm.

(下側溝の構成)
次に、下端支持部40が有する下側溝40Gの構成について、図5を参照しながら説明する。図5(a)は、図2のC−C線における第1下端支持部40aの断面図である。図5(b)は、同図(a)のY部分の拡大図である。
(Configuration of lower groove)
Next, the configuration of the lower groove 40G included in the lower end support portion 40 will be described with reference to FIG. Fig.5 (a) is sectional drawing of the 1st lower end support part 40a in CC line of FIG. FIG. 5B is an enlarged view of a Y portion in FIG.

下側溝40Gは、図5(a)に示すように、下方に向かってテーパー状に形成される。基板Sが下側溝40G内に収められることによって、基板Sの配列方向における位置ずれは所定の範囲に抑制される。   As shown in FIG. 5A, the lower groove 40G is formed in a tapered shape downward. When the substrate S is accommodated in the lower groove 40G, the positional deviation in the arrangement direction of the substrates S is suppressed within a predetermined range.

下側溝40Gは、図5(b)に示すように、一対の側面40L,40Mと、底面40Nとを有する。底面40Nは、平面状に形成されており、一対の側面40L,40Mそれぞれに繋がる。基板Sの下端部は、底面40N上に載置される。   As shown in FIG. 5B, the lower groove 40G has a pair of side surfaces 40L and 40M and a bottom surface 40N. The bottom surface 40N is formed in a planar shape and is connected to the pair of side surfaces 40L and 40M. The lower end portion of the substrate S is placed on the bottom surface 40N.

ここで、一対の側面40L,40Mそれぞれは、配列方向に対して角度θを有する。このような角度θは、配列方向における基板Sの撓みに基づいて決定されることが好ましい。具体的には、図5(b)に示すように、角度θは、底面40Nの配列方向端部で基板Sが撓んだ場合であっても、基板Sと一対の側面40L,40Mそれぞれとが面接触しない大きさであることが好ましい。例えば、約104mm角、約70μm厚の単結晶シリコン基板を用いる場合には、下側溝40Gの幅γを約4.75mm、下側溝40Gの高さδを約3.00mm、角度θを約65度に設定することができる。 Here, a pair of side surfaces 40L, 40M, respectively, an angle theta 1 with respect to the arrangement direction. Such an angle θ 1 is preferably determined based on the bending of the substrate S in the arrangement direction. Specifically, as shown in FIG. 5B, the angle θ 1 is equal to the substrate S and the pair of side surfaces 40L and 40M, even when the substrate S is bent at the end of the bottom surface 40N in the arrangement direction. It is preferable that it is the magnitude | size which does not carry out surface contact. For example, when a single crystal silicon substrate of about 104 mm square and about 70 μm thickness is used, the width γ 2 of the lower groove 40G is about 4.75 mm, the height δ 2 of the lower groove 40G is about 3.00 mm, and the angle θ 1. Can be set to about 65 degrees.

ただし、角度θが小さくなれば、下側溝40Gどうしのピッチが広がるため、基板ケース1に収納できる基板Sの数が減少する。従って、角度θは、上記条件を満たす範囲内でできるだけ大きいことが好ましい。 However, the smaller the angle theta 1, since the spread pitch and if lower groove 40G, the number of substrates S can be stored on board case 1 is reduced. Therefore, it is preferable that the angle θ 1 is as large as possible within the range satisfying the above condition.

(縦溝の構成)
次に、側端支持部20が有する縦溝20Gの構成について、図6を参照しながら説明する。図6は、図1のX部分の拡大図である。
(Vertical groove configuration)
Next, the configuration of the vertical groove 20G included in the side end support portion 20 will be described with reference to FIG. FIG. 6 is an enlarged view of a portion X in FIG.

縦溝20Gは、図6に示すように、側方に向かってテーパー状に形成される。基板Sが縦溝20Gの内側に収められることによって、基板Sの直交方向における位置ずれは抑制される。   As shown in FIG. 6, the vertical groove 20G is formed in a tapered shape toward the side. When the substrate S is accommodated inside the vertical groove 20G, the positional deviation of the substrate S in the orthogonal direction is suppressed.

縦溝20Gは、図6に示すように、一対の側面20L,20Mと、底面20Nとを有する。底面20Nは、上下方向に延びる平面であり、一対の側面20L,20Mそれぞれに繋がる。   As shown in FIG. 6, the vertical groove 20G has a pair of side surfaces 20L and 20M and a bottom surface 20N. The bottom surface 20N is a plane extending in the vertical direction, and is connected to each of the pair of side surfaces 20L and 20M.

ここで、一対の側面20L,20Mそれぞれは、配列方向に対して角度θを有する。このような角度θは、配列方向における基板Sの撓みに基づいて決定されることが好ましい。具体的には、図6に示すように、角度θは、底面20Nの配列方向端部で基板Sが撓んだ場合であっても、基板Sと一対の側面20L,20Mそれぞれとが面接触しない大きさであることが好ましい。例えば、約104mm角、約70μm厚の単結晶シリコン基板を用いる場合には、縦溝20Gの幅γを約4.75mm、縦溝20Gの高さδを約6mm、底面20Nと下側溝40Gの間隔δを約19mm、角度θを約73度に設定することができる。 Here, a pair of side surfaces 20L, 20M, respectively, an angle theta 2 with respect to the arrangement direction. Such an angle θ 2 is preferably determined based on the bending of the substrate S in the arrangement direction. Specifically, as shown in FIG. 6, the angle θ 2 is such that the substrate S and the pair of side surfaces 20L and 20M face each other even when the substrate S is bent at the end of the bottom surface 20N in the arrangement direction. It is preferable that it is the size which does not contact. For example, when a single crystal silicon substrate of about 104 mm square and about 70 μm thickness is used, the width γ 3 of the vertical groove 20G is about 4.75 mm, the height δ 3 of the vertical groove 20G is about 6 mm, the bottom surface 20N and the lower groove The interval δ 4 of 40G can be set to about 19 mm, and the angle θ 2 can be set to about 73 degrees.

ただし、角度θは、上記条件を満たす範囲内でできるだけ大きいことが好ましい。 However, it is preferable that the angle θ 2 is as large as possible within a range satisfying the above conditions.

(作用及び効果)
本実施形態に係る基板ケース1において、縦溝20Gの一対の側面20L,20Mそれぞれは、配列方向に対して角度θを有する。角度θは、配列方向における基板Sの撓みに基づいて決定される。
(Function and effect)
In board case 1 according to the present embodiment, the longitudinal groove 20G of the pair of side faces 20L, 20M, respectively, an angle theta 2 with respect to the arrangement direction. Angle theta 2 is determined based on the deflection of the substrate S in the arrangement direction.

従って、基板ケース1を薬液中から引き上げる際に、基板Sが縦溝20Gの一対の側面20L,20Mそれぞれに貼りつかない角度に角度θを決定することができる。従って、基板Sが縦溝20Gの一対の側面20L,20Mそれぞれに貼りつくことを抑制できる。その結果、基板Sに割れや反りが発生することを抑制できる。 Accordingly, the board case 1 when pulled from the chemical solution, the substrate S can be determined the angle theta 2 to the angle not sticking to each longitudinal groove 20G of the pair of side faces 20L, 20M. Therefore, it can suppress that the board | substrate S sticks to each of a pair of side surface 20L, 20M of the vertical groove 20G. As a result, it is possible to suppress the substrate S from being cracked or warped.

また、下側溝40Gと上側溝10Gとは、基板Sの配列方向における位置ずれを所定の範囲に制約する。従って、このような制約の下で角度θを設定できるため、角度θを精度良く設定することができる。また、基板Sの位置ずれが所定の範囲に制約されるため、基板ケース1に複数の基板Sが収納される場合、複数の基板Sどうしが貼りつくことを抑制できる。 Further, the lower groove 40G and the upper groove 10G restrict the positional deviation in the arrangement direction of the substrates S to a predetermined range. Therefore, since the angle θ 2 can be set under such a restriction, the angle θ 2 can be set with high accuracy. Further, since the positional deviation of the substrates S is restricted to a predetermined range, when a plurality of substrates S are stored in the substrate case 1, it is possible to suppress the plurality of substrates S from sticking to each other.

また、縦溝20Gは、テーパー状であり、一対の側面20L,20Mそれぞれに繋がる平面状の底面20Nを有する。ここで、縦溝がV字状に形成されている場合において、基板Sを縦溝に抜き差しする際、基板Sが縦溝に挟まれることにより、基板Sに割れや欠けが生じやすい。一方、本実施形態に係る縦溝20Gは、平面状の底面20Nを有するため、基板Sが縦溝20Gに挟まれることを抑制できる。   The vertical groove 20G is tapered and has a flat bottom surface 20N connected to each of the pair of side surfaces 20L and 20M. Here, when the vertical groove is formed in a V shape, when the substrate S is inserted into and removed from the vertical groove, the substrate S is easily cracked or chipped by being sandwiched between the vertical grooves. On the other hand, since the vertical groove 20G according to the present embodiment has a planar bottom surface 20N, the substrate S can be prevented from being sandwiched between the vertical grooves 20G.

また、本実施形態に係る下側溝40Gの一対の側面40L,40Mそれぞれは、配列方向に対して角度θを有する。角度θは、配列方向における基板Sの撓みに基づいて決定される。従って、基板ケース1を薬液中から引き上げる際に、基板Sが、下側溝40Gの一対の側面40L,40Mそれぞれに貼りつくことを抑制できる。 Further, a pair of side surfaces 40L of lower groove 40G of the present embodiment, 40M, respectively, an angle theta 1 with respect to the arrangement direction. The angle θ 1 is determined based on the bending of the substrate S in the arrangement direction. Therefore, when the substrate case 1 is pulled up from the chemical solution, the substrate S can be prevented from sticking to the pair of side surfaces 40L and 40M of the lower groove 40G.

また、下側溝40Gは、テーパー状であり、一対の側面40L,40Mそれぞれに繋がる平面状の底面40Nを有する。ここで、下側溝がV字状に形成されている場合には、基板Sが下側溝に挟み込まれることにより、基板Sに割れや欠けが生じやすい。一方、本実施形態に係る下側溝40Gは、平面状の底面40Nで基板Sを支持するため、基板Sが下側溝40Gに挟み込まれることを抑制できる。   The lower groove 40G is tapered and has a flat bottom surface 40N connected to the pair of side surfaces 40L and 40M. Here, when the lower groove is formed in a V shape, the substrate S is easily cracked or chipped by being sandwiched between the lower grooves. On the other hand, since the lower groove 40G according to the present embodiment supports the substrate S with the flat bottom surface 40N, the substrate S can be prevented from being sandwiched between the lower grooves 40G.

また、本実施形態に係る下端支持部40に含まれる第1下端支持部40a及び第2下端支持部40bそれぞれは、下側溝40Gを有する。従って、基板Sの下端部は2つの下側溝40Gにおいて支持される。そのため、基板Sの一部に自重が集中することにより、基板Sに割れや欠けが生じることを抑制できる。また、下端支持部40と側端支持部20との間隔を小さくすることができるため、下端支持部40と側端支持部20との間で基板Sが撓むことを抑制できる。   In addition, each of the first lower end support portion 40a and the second lower end support portion 40b included in the lower end support portion 40 according to the present embodiment has a lower groove 40G. Accordingly, the lower end portion of the substrate S is supported by the two lower grooves 40G. For this reason, it is possible to prevent the substrate S from being cracked or chipped due to the concentration of its own weight on a part of the substrate S. Moreover, since the space | interval of the lower end support part 40 and the side end support part 20 can be made small, it can suppress that the board | substrate S bends between the lower end support part 40 and the side end support part 20. FIG.

(その他の実施形態)
本発明は上記の実施形態によって記載したが、この開示の一部をなす論述及び図面はこの発明を限定するものであると理解すべきではない。この開示から当業者には様々な代替実施形態、実施例及び運用技術が明らかとなろう。
(Other embodiments)
Although the present invention has been described according to the above-described embodiments, it should not be understood that the descriptions and drawings constituting a part of this disclosure limit the present invention. From this disclosure, various alternative embodiments, examples and operational techniques will be apparent to those skilled in the art.

例えば、上記実施形態では、上側溝10Gと下側溝40Gとを異なる形状にしたが、上側溝10Gは、下側溝40Gと同様の構成を有していてもよい。この場合には、上側溝10Gと基板Sとが貼りつくことを抑制できる。   For example, in the above embodiment, the upper groove 10G and the lower groove 40G have different shapes, but the upper groove 10G may have the same configuration as the lower groove 40G. In this case, sticking of the upper groove 10G and the substrate S can be suppressed.

また、上記実施形態では、上側溝10G、縦溝20G、下側溝40Gの寸法を例示したが、これらの寸法は、基板Sの寸法や材質などを考慮して適宜変更することができる。   In the above-described embodiment, the dimensions of the upper groove 10G, the vertical groove 20G, and the lower groove 40G are illustrated, but these dimensions can be changed as appropriate in consideration of the dimensions and materials of the substrate S.

また、上記実施形態では、上端支持部10及び下端支持部40を配列方向に沿って2本ずつ設けたが、これに限らない。例えば、上端支持部10及び下端支持部40を板状に形成するとともに、直交方向に沿って延びる上側溝10G及び下側溝40Gを形成してもよい。   Moreover, in the said embodiment, although the two upper end support parts 10 and the lower end support parts 40 were provided along the sequence direction, it is not restricted to this. For example, the upper end support portion 10 and the lower end support portion 40 may be formed in a plate shape, and the upper groove 10G and the lower groove 40G extending along the orthogonal direction may be formed.

また、上記実施形態では、上面視において、上側溝10Gと下側溝40Gとを同じ位置に形成したが、上側溝10Gの位置と下側溝40Gの位置とは同じでなくてもよい。すなわち、基板S及び縦溝20Gは、水平面に対して略垂直であれば良く、水平面に対する若干の傾きを許容するものである。   In the above embodiment, the upper groove 10G and the lower groove 40G are formed at the same position in a top view, but the position of the upper groove 10G and the position of the lower groove 40G may not be the same. That is, the substrate S and the vertical groove 20G may be substantially perpendicular to the horizontal plane and allow a slight inclination with respect to the horizontal plane.

また、上記実施形態では、上側溝10G及び下側溝40Gそれぞれの断面をテーパー状にしたが、上側溝10G及び下側溝40Gそれぞれの断面は矩形であってもよい。   Moreover, in the said embodiment, although each cross section of the upper side groove | channel 10G and the lower side groove | channel 40G was made into the taper shape, the cross section of each of the upper side groove | channel 10G and the lower side groove | channel 40G may be a rectangle.

また、上記実施形態では、上端支持部10を取外した状態で基板Sを基板ケース1内に収納することとしたが、上端支持部10は、固定部30に固定されていてもよい。この場合には、側端支持部20または下端支持部40の何れかが固定部30に対して取外し可能であればよい。   In the above-described embodiment, the substrate S is stored in the substrate case 1 with the upper end support 10 removed, but the upper end support 10 may be fixed to the fixed portion 30. In this case, it is only necessary that either the side end support part 20 or the lower end support part 40 is removable from the fixed part 30.

このように、本発明はここでは記載していない様々な実施形態等を含むことは勿論である。従って、本発明の技術的範囲は上記の説明から妥当な特許請求の範囲に係る発明特定事項によってのみ定められるものである。   As described above, the present invention naturally includes various embodiments not described herein. Therefore, the technical scope of the present invention is defined only by the invention specifying matters according to the scope of claims reasonable from the above description.

以下、本発明に係る基板ケースの実施例について具体的に説明するが、本発明は、下記の実施例に示したものに限定されるものではなく、その要旨を変更しない範囲において、適宜変更して実施することができる。   Hereinafter, examples of the substrate case according to the present invention will be specifically described. However, the present invention is not limited to those shown in the following examples, and may be appropriately changed without departing from the scope of the invention. Can be implemented.

(基板ケースの構成)
本実施例に係る基板ケースは、図1〜6を用いて説明した上記実施形態に係る基板ケース1と同様の構成を有する。具体的に、本実施例に係る基板ケースは、以下の寸法で構成される。
(Configuration of board case)
The substrate case according to this example has the same configuration as the substrate case 1 according to the above-described embodiment described with reference to FIGS. Specifically, the substrate case according to the present embodiment is configured with the following dimensions.

図4を参照して、上側溝10Gの深部と基板との間隔αは0.5mm、上側溝10Gの幅γは4.75mm、上側溝10Gの高さδは4.00mmであった。 Referring to FIG. 4, the distance α between the deep portion of the upper groove 10G and the substrate was 0.5 mm, the width γ 1 of the upper groove 10G was 4.75 mm, and the height δ 1 of the upper groove 10G was 4.00 mm. .

また、図5を参照して、下側溝40Gの幅γは4.75mm、下側溝40Gの高さδは約3.00mm、角度θは65度であった。 Referring to FIG. 5, the width γ 2 of the lower groove 40G was 4.75 mm, the height δ 2 of the lower groove 40G was about 3.00 mm, and the angle θ 1 was 65 degrees.

また、図6を参照して、縦溝20Gの幅γは4.75mm、縦溝20Gの高さδは6mm、底面20Nと下側溝40Gの間隔δは19mm、角度θは73度であった。 Referring to FIG. 6, the width γ 3 of the longitudinal groove 20G is 4.75 mm, the height δ 3 of the longitudinal groove 20G is 6 mm, the distance δ 4 between the bottom surface 20N and the lower groove 40G is 19 mm, and the angle θ 2 is 73. It was a degree.

(基板のエッチング処理)
次に、様々な厚みを有する単結晶シリコン基板(104mm角)を複数枚ずつ準備し、次のようにエッチング処理を行った。
(Substrate etching process)
Next, a plurality of single crystal silicon substrates (104 mm square) having various thicknesses were prepared, and etching treatment was performed as follows.

まず、上記構成を有する基板ケース内に、複数枚の単結晶シリコン基板を略平行に並べた。   First, a plurality of single crystal silicon substrates were arranged substantially in parallel in a substrate case having the above configuration.

次に、アルカリエッチング液が入れられたエッチング槽に基板ケースを浸漬して、複数枚の単結晶シリコン基板にエッチング処理を施した。   Next, the substrate case was immersed in an etching tank in which an alkaline etching solution was placed, and etching treatment was performed on a plurality of single crystal silicon substrates.

その後、基板ケースをエッチング槽から引き上げた。   Thereafter, the substrate case was pulled up from the etching tank.

(貼りつきの確認)
基板ケースをエッチング槽から引き上げた後、単結晶シリコン基板と上側溝の側面及び下側溝の側面との貼りつきの発生状況を確認した。
(Check for sticking)
After lifting the substrate case from the etching tank, the occurrence of sticking between the single crystal silicon substrate and the side surfaces of the upper and lower grooves was confirmed.

その結果、単結晶シリコン基板の厚みが約70μm以上である場合には、単結晶シリコン基板と各溝の側面との貼りつきは発生しなかったため、エッチング処理工程の歩留まりは100%であった。一方、単結晶シリコン基板の厚みが約70μmより小さい場合には、単結晶シリコン基板と各溝の側面との貼りつきが発生したため、単結晶シリコン基板に割れや反りが生じた。これは、単結晶シリコン基板の厚みが小さいほど、単結晶シリコン基板の撓みが大きいためである。   As a result, when the thickness of the single crystal silicon substrate was about 70 μm or more, no sticking between the single crystal silicon substrate and the side surface of each groove occurred, and the yield of the etching process was 100%. On the other hand, when the thickness of the single crystal silicon substrate was smaller than about 70 μm, the single crystal silicon substrate and the side surface of each groove were stuck, and the single crystal silicon substrate was cracked or warped. This is because as the thickness of the single crystal silicon substrate is smaller, the deflection of the single crystal silicon substrate is larger.

このことから、70μm厚以上の単結晶シリコン基板の撓みに対しては、下側溝40Gの側面の角度θを65度以下、縦溝20Gの側面の角度θを73度以下とすることが好ましいことが判った。 From this, for the bending of the single crystal silicon substrate having a thickness of 70 μm or more, the angle θ 1 of the side surface of the lower groove 40G may be 65 degrees or less, and the angle θ 2 of the side surface of the vertical groove 20G may be 73 degrees or less. It turned out to be preferable.

また、70μmより小さい厚みの単結晶シリコン基板の撓みに対しては、下側溝40Gの側面の角度θを65度より小さくし、縦溝20Gの側面の角度θを73度より小さくすることが好ましいことが判った。 For the bending of the single crystal silicon substrate having a thickness of less than 70 μm, the angle θ 1 of the side surface of the lower groove 40G is made smaller than 65 degrees, and the angle θ 2 of the side surface of the vertical groove 20G is made smaller than 73 degrees. Was found to be preferable.

以上より、縦溝20G及び下側溝40Gの側面の角度を、基板の材質と寸法、すなわち基板の撓みに基づいて決定することによって、基板と各溝の側面との貼りつきを抑制できることが確認された。   From the above, it has been confirmed that sticking between the substrate and the side surface of each groove can be suppressed by determining the angles of the side surfaces of the vertical groove 20G and the lower groove 40G based on the material and dimensions of the substrate, that is, the bending of the substrate. It was.

本発明の実施形態に係る基板ケース1の上面図である。1 is a top view of a substrate case 1 according to an embodiment of the present invention. 本発明の実施形態に係る基板ケース1の上面図である。1 is a top view of a substrate case 1 according to an embodiment of the present invention. 図1のA−A線における断面図である。It is sectional drawing in the AA of FIG. 図1のB−B線における断面図である。It is sectional drawing in the BB line of FIG. 図2のC−C線における断面図である。It is sectional drawing in the CC line of FIG. 図2のX部分の拡大図である。FIG. 3 is an enlarged view of a portion X in FIG. 2.

符号の説明Explanation of symbols

1…基板ケース
10…上端支持部
10G…上側溝
10a…上端支持部
15…固定具
20…側端支持部
20G…縦溝
20L,20M…側面
20N…底面
30…固定部
40…下端支持部
40G…下側溝
40L,40M…側面
40N…底面
S…基板
DESCRIPTION OF SYMBOLS 1 ... Substrate case 10 ... Upper end support part 10G ... Upper side groove | channel 10a ... Upper end support part 15 ... Fixing tool 20 ... Side end support part 20G ... Vertical groove 20L, 20M ... Side surface 20N ... Bottom face 30 ... Fixed part 40 ... Lower end support part 40G ... Lower groove 40L, 40M ... Side 40N ... Bottom S ... Substrate

Claims (5)

所定の基板を所定の方向に対して略垂直に支持して、所定の処理を行うために用いる基板ケースであって、
前記基板の下端部を支持する下側溝を有する下端支持部と、
前記基板の上端部を支持する上側溝を有する上端支持部と、
前記基板の両側端部を支持する縦溝をそれぞれ有する一対の側端支持部と
を備え、
前記縦溝は、上下方向に沿って延び、
前記縦溝は、テーパー状に形成されており、
前記縦溝が有する一対の側面それぞれは、前記所定の方向に対して第1の角度を有し、
前記第1の角度は、前記所定の処理の際、前記所定の基板に生じる前記所定の方向における前記基板の撓みに基づいて決定される
ことを特徴とする基板ケース。
A substrate case used to perform a predetermined process by supporting a predetermined substrate substantially perpendicularly to a predetermined direction,
A lower end support having a lower groove for supporting the lower end of the substrate;
An upper end support portion having an upper groove for supporting the upper end portion of the substrate;
A pair of side end support portions each having a longitudinal groove for supporting both side end portions of the substrate,
The vertical groove extends along the vertical direction,
The vertical groove is formed in a tapered shape ,
Each of the pair of side surfaces of the longitudinal groove has a first angle with respect to the predetermined direction,
The substrate case according to claim 1, wherein the first angle is determined based on a deflection of the substrate in the predetermined direction that occurs in the predetermined substrate during the predetermined processing .
前記縦溝は、前記縦溝が有する一対の側面それぞれに繋がる平面状の底面を有する
ことを特徴とする請求項1に記載の基板ケース。
The substrate case according to claim 1, wherein the vertical groove has a flat bottom surface connected to each of a pair of side surfaces of the vertical groove.
前記下側溝は、前記下側溝が有する一対の側面それぞれに繋がる平面状の底面を有することを特徴とする請求項1〜2のいずれかに記載の基板ケース。The substrate case according to claim 1, wherein the lower groove has a planar bottom surface connected to each of a pair of side surfaces of the lower groove. 前記下端支持部は、前記所定の方向に沿って延びる第1下端支持部及び第2下端支持部を含み、The lower end support part includes a first lower end support part and a second lower end support part extending along the predetermined direction,
前記第1下端支持部及び前記第2下端支持部それぞれは、前記下側溝を有するEach of the first lower end support portion and the second lower end support portion has the lower groove.
ことを特徴とする請求項1〜3のいずれかに記載の基板ケース。The substrate case according to any one of claims 1 to 3.
所定の基板を所定の方向に対して略垂直に支持して、薬液処理を施す処理方法であって、A processing method for supporting a predetermined substrate substantially perpendicularly to a predetermined direction and performing a chemical treatment,
前記基板を基板ケース内に立てて収納する工程Aと、Step A for storing the substrate upright in a substrate case;
前記基板ケースを薬液中に浸漬する工程Bと、Step B of immersing the substrate case in a chemical solution;
前記基板ケースを前記薬液中から取り出す工程CとStep C for removing the substrate case from the chemical solution;
を備え、With
前記基板ケースは、The substrate case is
前記基板の下端部を支持する下側溝を有する下端支持部と、A lower end support having a lower groove for supporting the lower end of the substrate;
前記基板の上端部を支持する上側溝を有する上端支持部と、An upper end support portion having an upper groove for supporting the upper end portion of the substrate;
前記基板の両側端部を支持する縦溝をそれぞれ有する一対の側端支持部とA pair of side end support portions each having a longitudinal groove for supporting both side end portions of the substrate;
を備え、With
前記縦溝は、上下方向に沿って延び、The vertical groove extends along the vertical direction,
前記縦溝は、テーパー状に形成されており、The vertical groove is formed in a tapered shape,
前記縦溝が有する一対の側面それぞれは、前記基板に垂直な方向に対して第1の角度を有し、Each of the pair of side surfaces of the longitudinal groove has a first angle with respect to a direction perpendicular to the substrate,
前記第1の角度は、前記薬液処理の際、前記所定の基板に生じる前記所定の方向における前記基板の撓みに基づいて決定されるThe first angle is determined based on the deflection of the substrate in the predetermined direction that occurs in the predetermined substrate during the chemical treatment.
ことを特徴とする処理方法。A processing method characterized by the above.
JP2008072496A 2008-03-19 2008-03-19 Substrate case and processing method Active JP5153399B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008072496A JP5153399B2 (en) 2008-03-19 2008-03-19 Substrate case and processing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2008072496A JP5153399B2 (en) 2008-03-19 2008-03-19 Substrate case and processing method

Publications (2)

Publication Number Publication Date
JP2009231386A JP2009231386A (en) 2009-10-08
JP5153399B2 true JP5153399B2 (en) 2013-02-27

Family

ID=41246488

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2008072496A Active JP5153399B2 (en) 2008-03-19 2008-03-19 Substrate case and processing method

Country Status (1)

Country Link
JP (1) JP5153399B2 (en)

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0636584Y2 (en) * 1988-08-29 1994-09-21 大日本スクリーン製造株式会社 Substrate storage container
JPH05109877A (en) * 1991-10-14 1993-04-30 Tokyo Electron Ltd Substrate support device
JPH05229581A (en) * 1992-02-20 1993-09-07 Sony Corp Wafer carrier case
JPH06232104A (en) * 1993-01-29 1994-08-19 Komatsu Electron Metals Co Ltd Identification code engraving groove in carrier surface made of eluororesin
JPH072281U (en) * 1993-06-14 1995-01-13 日本電気硝子株式会社 Tool for storing plates
JPH07310192A (en) * 1994-05-12 1995-11-28 Tokyo Electron Ltd Washing treatment device
JPH0964162A (en) * 1995-08-18 1997-03-07 Kakizaki Seisakusho:Kk Support container for thin plate
JP2000012672A (en) * 1998-06-22 2000-01-14 Dainippon Screen Mfg Co Ltd Substrate holding structure, substrate processor, substrate transfer apparatus and substrate housing
JP2000124297A (en) * 1998-10-20 2000-04-28 Dainippon Screen Mfg Co Ltd Board holder
JP2000208604A (en) * 1999-01-19 2000-07-28 Sharp Corp Partitioning jig and chemical process method for wafer
JP2002329702A (en) * 2001-05-01 2002-11-15 Sumitomo Electric Ind Ltd Semiconductor substrate cleansing tool and method of inserting wafer into it
JP3938293B2 (en) * 2001-05-30 2007-06-27 信越ポリマー株式会社 Precision substrate storage container and its holding member
JP4693582B2 (en) * 2005-10-12 2011-06-01 株式会社TanaーX Wafer storage paper container
JP4801981B2 (en) * 2005-11-30 2011-10-26 Hoya株式会社 Substrate storage container, glass substrate storage body with film, mask blank storage body, and transfer mask storage body

Also Published As

Publication number Publication date
JP2009231386A (en) 2009-10-08

Similar Documents

Publication Publication Date Title
CN106573829B (en) Ultrasonic groove and uniform glass substrate etching method
JP5336157B2 (en) Plate-shaped article conveyance tray
US9881822B2 (en) Multi-stepped boat assembly for receiving semiconductor packages
KR20040045942A (en) Semiconductor manufacturing system for thermal process
US11282731B2 (en) Wafer cutting device and method
TW201320222A (en) Solar cell process carrier
JP2007281342A (en) Substrate processing apparatus and substrate processing method
JP5153399B2 (en) Substrate case and processing method
KR20090038088A (en) Wafer cassette
KR20140131139A (en) Apparatus for aligning a substrate and appratus for cutting a substrate using the same
JPWO2009066503A1 (en) Probe array substrate and manufacturing method thereof, and probe array and manufacturing method thereof
US10147626B2 (en) Wafer cassette and placement method thereof
JP2015204463A (en) Method for drying wafer substrate and wafer holder
KR101891783B1 (en) Apparatus for separating a wafer
CN102903659A (en) Semiconductor processing device and application method thereof
JP2009028982A (en) Manufacturing method of carrier plate, and carrier plate
JP2007067078A (en) Cleaning semiconductor chip tray
CN114141675A (en) Quartz boat suitable for wafers with different thicknesses
KR100913351B1 (en) Structure for fixing wafer and apparatus for cleaning wafer having the same
KR101823142B1 (en) The needle assembly for the probe card
JP2008147535A (en) Carrier for substrate
JP2020102570A (en) Washing tank of semiconductor wafer and cleaning method
KR101197226B1 (en) Glass fixing apparatus
KR20090036916A (en) Buffer system for a substrate
JP7183997B2 (en) Glass substrate processing method

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20110225

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120123

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120131

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120327

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120821

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121002

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121106

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121204

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151214

Year of fee payment: 3

R151 Written notification of patent or utility model registration

Ref document number: 5153399

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R151

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151214

Year of fee payment: 3