JP2008147535A - Carrier for substrate - Google Patents

Carrier for substrate Download PDF

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JP2008147535A
JP2008147535A JP2006335316A JP2006335316A JP2008147535A JP 2008147535 A JP2008147535 A JP 2008147535A JP 2006335316 A JP2006335316 A JP 2006335316A JP 2006335316 A JP2006335316 A JP 2006335316A JP 2008147535 A JP2008147535 A JP 2008147535A
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substrate
semiconductor wafer
plate
piece
substrate carrier
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JP4745209B2 (en
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Akira Kashimoto
明 樫本
Toshiyuki Kamata
俊行 鎌田
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Shin Etsu Polymer Co Ltd
Shin Etsu Chemical Co Ltd
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Shin Etsu Polymer Co Ltd
Shin Etsu Chemical Co Ltd
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a carrier for a substrate improved in operator handling property and draining property. <P>SOLUTION: The carrier comprises a bottom plate 1 and a top plate 20 opposing each other so as to house a plurality of semiconductor wafers W, a plurality of side plates 30 connecting both side parts of the bottom plate 1 and the top plate 20, and a pair of connection columns 40 connecting back surface parts of the bottom plate 1 and the top plate 20. A part between the front surface parts of the bottom plate 1 and the top plate 20 is turned to a take-in/take-out port 50 for the semiconductor wafers W, a plurality of support pieces 31 supporting the side part peripheral edge of the semiconductor wafer W are arranged side by side at a prescribed pitch on the respective side plates 30, and a plurality of control pieces 41 for interfering with the rear part peripheral edge of the semiconductor wafer W are arranged side by side at a prescribed pitch on the respective connection columns 40. Then, the inner surfaces 5/21 of the bottom plate 1 and the top plate 20 are inclined at the angle of 0.5°-3.0° respectively so as to be gradually widened as approaching the take-in/take-out port 50 for the semiconductor wafer W from the back surface direction, and holding areas 6/22 for manual operations are respectively formed at the outer surface peripheral edge of the bottom plate 1 and the top plate 20. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

本発明は、半導体ウェーハやガラスウェーハ等からなる基板を収納する基板用キャリアに関するものである。   The present invention relates to a substrate carrier for storing a substrate made of a semiconductor wafer, a glass wafer or the like.

半導体ウェーハを収納する従来の基板用キャリアは、図示しないが、複数枚の半導体ウェーハを収納可能に対向する一対の対向板と、この一対の対向板の両側部間を接続する一対の側板と、一対の対向板の背面部間を連結する一対の連結柱とを備え、一対の対向板の正面部間が半導体ウェーハ用の出し入れ口とされており、縦置きあるいは横置きにして半導体製造の工程内で使用されたり、半導体ウェーハを収納した状態で洗浄槽内に浸漬される(特許文献1、2、3参照)。   A conventional substrate carrier for storing a semiconductor wafer is not shown, but a pair of opposing plates that can accommodate a plurality of semiconductor wafers, a pair of side plates that connect between both side portions of the pair of opposing plates, A pair of connecting columns for connecting the back portions of the pair of opposing plates, and the front portion of the pair of opposing plates is used as a semiconductor wafer inlet / outlet. Or immersed in a cleaning tank in a state where a semiconductor wafer is accommodated (see Patent Documents 1, 2, and 3).

各側板の内面には、半導体ウェーハの側部周縁を支持する支持片が所定のピッチで複数並設されている。また、各連結柱の内面には、半導体ウェーハの後部周縁に干渉可能な制御片が所定のピッチで複数並設され、制御片と制御片との間には溝が形成されている。
特開平10‐163304号公報 特開平11‐26567号公報 特開平11‐31739号公報
On the inner surface of each side plate, a plurality of support pieces for supporting the side edge of the semiconductor wafer are arranged in parallel at a predetermined pitch. A plurality of control pieces capable of interfering with the rear periphery of the semiconductor wafer are arranged in parallel at a predetermined pitch on the inner surface of each connecting column, and a groove is formed between the control piece and the control piece.
JP-A-10-163304 Japanese Patent Laid-Open No. 11-26567 JP 11-31739 A

従来における基板用キャリアは、以上のように構成され、一対の対向板、側板、及び連結柱に手動用の把持部分が何ら設けられておらず、滑りやすいので、作業者のハンドリング性が実に困難であるという問題がある。また、洗浄槽内に浸漬された際の水切り性が悪いという問題もある。   The conventional carrier for substrates is configured as described above, and since there are no manual gripping portions on the pair of opposing plates, side plates, and connecting pillars, and it is slippery, it is very difficult for the operator to handle. There is a problem that. Moreover, there is also a problem that drainability is poor when immersed in the cleaning tank.

本発明は上記に鑑みなされたもので、作業者のハンドリング性や水切り性を向上させることのできる基板用キャリアを提供することを目的としている。   The present invention has been made in view of the above, and an object of the present invention is to provide a carrier for a substrate that can improve the handling property and drainage property of an operator.

本発明においては上記課題を解決するため、複数枚の基板を収納可能に対向する一対の対向板と、この一対の対向板の両側部間を接続する複数の側板と、一対の対向板の一端部間の少なくとも一部を覆う連結板とを備え、一対の対向板の他端部間を基板用の出し入れ口とし、各側板に、基板の側部周縁を支持する支持片を所定のピッチで複数配列するとともに、連結板に、基板の一端部周縁に干渉可能な制御片を所定のピッチで複数配列して制御片と制御片との間には溝を形成し、縦置きあるいは横置きにして使用されるものであって、
一対の対向板のうち少なくとも一の対向板の内面を、一対の対向板の一端部側から基板用の出し入れ口方向に向かうに従い徐々に広がるよう0.5°〜3.0°の角度で傾斜させ、少なくとも一の対向板の他端部周縁に把持領域を形成したことを特徴としている。
In the present invention, in order to solve the above-mentioned problem, a pair of opposing plates that can accommodate a plurality of substrates, a plurality of side plates that connect both side portions of the pair of opposing plates, and one end of the pair of opposing plates A connecting plate that covers at least a part between the portions, and the other end of the pair of opposing plates is used as a substrate insertion / removal port, and each side plate is provided with a support piece for supporting the peripheral edge of the substrate at a predetermined pitch. A plurality of control pieces capable of interfering with the peripheral edge of one end of the substrate are arranged on the connecting plate at a predetermined pitch, and a groove is formed between the control pieces and the control pieces. Used,
The inner surface of at least one counter plate of the pair of counter plates is inclined at an angle of 0.5 ° to 3.0 ° so as to gradually spread from one end portion side of the pair of counter plates toward the loading / unloading port for the substrate. And a gripping region is formed at the periphery of the other end of at least one counter plate.

なお、一の対向板の周縁部にピックアップ用の段差部を形成し、複数の側板と連結板との間に空間を形成するとともに、連結板を複数の連結柱に分割してこれらの間には空間を形成することができる。
また、少なくとも一の対向板の内面と複数の支持片のうち最も端に位置する支持片との間に基板用の傾斜角度規制体を介在することが好ましい。
また、支持片と縦置き時に起立した基板との接触点を通る直線を基板の中心よりも下方に位置させることができる。
In addition, a stepped portion for pickup is formed in the peripheral portion of one counter plate, a space is formed between the plurality of side plates and the connecting plate, and the connecting plate is divided into a plurality of connecting columns between them. Can form a space.
Moreover, it is preferable to interpose an inclination angle restricting body for the substrate between the inner surface of at least one counter plate and the support piece located at the end of the plurality of support pieces.
In addition, a straight line passing through the contact point between the support piece and the substrate standing upright when placed vertically can be positioned below the center of the substrate.

また、少なくとも一の対向板の内面と複数の制御片のうち最も端に位置する制御片との間に基板用の汚染防止体を介在することができる。
また、少なくとも一の対向板の他端部周縁からリブを外方向に突出させて把持領域を形成することが好ましい。
Further, a substrate anti-contamination body can be interposed between the inner surface of at least one counter plate and the control piece located at the end of the plurality of control pieces.
Moreover, it is preferable to form a holding | grip area | region by making a rib protrude outward from the other end part peripheral edge of at least one opposing board.

また、各支持片を略板形に形成してその対向板の一端部側に位置する一端部を対向板の内方向に屈曲する屈曲部に形成し、複数の支持片の少なくとも屈曲部の間に基板用の損傷防止片を備えてその基板の側部周縁に対向する対向面を略V字形に形成し、この損傷防止片の対向面の傾斜角度を60°〜85°の範囲とすることが好ましい。   Further, each support piece is formed in a substantially plate shape, and one end portion located on one end side of the opposite plate is formed as a bent portion bent inward of the opposite plate, and at least between the bent portions of the plurality of support pieces. The substrate is provided with a damage prevention piece for the substrate, and the opposed surface facing the peripheral edge of the substrate is formed in a substantially V shape, and the inclination angle of the opposed surface of the damage prevention piece is in the range of 60 ° to 85 °. Is preferred.

また、複数の制御片の間に基板用の姿勢制御片を備えてその基板の一端部周縁に対向する対向面を凹み形成し、この姿勢制御片の対向面を、第一の傾斜面と、この第一の傾斜面の反対側に位置する第二の傾斜面と、これら第一、第二の傾斜面の間に位置する最深溝とから形成し、第一、第二の傾斜面を非対称にして最深溝を制御片と制御片との間における溝の中心線からずらすと良い。
さらに、横置き使用時に支持片に略水平に支持された基板の一端部周縁と姿勢制御片の最深溝とを離隔(離し隔てる)させると良い。
Further, a posture control piece for the substrate is provided between the plurality of control pieces, and a facing surface facing the peripheral edge of the one end of the substrate is formed to be concave, and the facing surface of the posture control piece is defined as the first inclined surface, The first and second inclined surfaces are asymmetrically formed by a second inclined surface located on the opposite side of the first inclined surface and a deepest groove positioned between the first and second inclined surfaces. Then, the deepest groove may be shifted from the center line of the groove between the control piece and the control piece.
Furthermore, it is preferable to separate (separate) the peripheral edge of the one end portion of the substrate that is supported substantially horizontally by the support piece and the deepest groove of the posture control piece during horizontal use.

ここで、特許請求の範囲における基板には、少なくとも口径200mm、300mm、450mmの半導体ウェーハ、ダミーウェーハ、ガラスウェーハ等が含まれる。対向板、複数の側板、及び連結板は、一体成形されても良いし、締結具等を使用して組み立てられても良い。これら対向板、複数の側板、及び連結板は、透明、不透明、半透明を特に問うものではない。また、連結板は、一対の対向板の一端部間に連結されるが、一対の側板間に単数複数架設されて一対の対向板における一端部間の少なくとも一部を覆う板でも良い。   Here, the substrate in the claims includes at least a semiconductor wafer having a diameter of 200 mm, 300 mm, and 450 mm, a dummy wafer, a glass wafer, and the like. The counter plate, the plurality of side plates, and the connection plate may be integrally formed, or may be assembled using a fastener or the like. These counter plate, the plurality of side plates, and the connecting plate are not particularly required to be transparent, opaque, or translucent. Moreover, although a connection board is connected between the one end parts of a pair of opposing board, the board by which one or more erection was carried out between a pair of side boards, and the board which covers at least one part between the one end parts of a pair of opposing board may be sufficient.

側板と支持片とは、同一の成形材料により一体成形されても良いし、別の成形材料により多色成形されても良い。この点については、連結板と制御片も同様である。また、側板と基板用の損傷防止片とは、同一の成形材料により一体成形されても良いし、別の成形材料により成形されても良く、損傷防止片を後付けしても良い。この点については、連結板と姿勢制御片も同様である。   The side plate and the support piece may be integrally molded with the same molding material, or may be multicolor molded with different molding materials. This also applies to the connecting plate and the control piece. Further, the side plate and the damage prevention piece for the substrate may be integrally formed of the same molding material, may be formed of different molding materials, or the damage prevention piece may be retrofitted. The same applies to the connecting plate and the posture control piece.

本発明によれば、作業者のハンドリング性や水切り性を向上させることができるという効果がある。
また、少なくとも一の対向板の内面と複数の支持片のうち最も端に位置する支持片との間に基板用の傾斜角度規制体を介在すれば、傾斜角度規制体が最も端に位置する基板を他の基板と略同様の傾斜角度で傾斜させるので、最も端に位置する基板が他の基板よりも傾いて姿勢が不安定化するのを防ぐことができる。
According to the present invention, there is an effect that the handling property and drainage property of an operator can be improved.
Further, if an inclination angle restricting body for a substrate is interposed between the inner surface of at least one counter plate and the support piece located at the end of the plurality of support pieces, the substrate at which the inclination angle restricting body is located at the end most Is inclined at substantially the same inclination angle as that of the other substrates, so that it is possible to prevent the substrate located at the end from being inclined more than the other substrates and destabilizing the posture.

また、少なくとも一の対向板の内面と複数の制御片のうち最も端に位置する制御片との間に基板用の汚染防止体を介在すれば、最も端に位置する基板が少なくとも一の対向板の影響で汚染するのを防ぐことができる。   Further, if a contamination prevention body for a substrate is interposed between the inner surface of at least one counter plate and the control piece positioned at the end of the plurality of control pieces, the substrate positioned at the end is at least one counter plate. It is possible to prevent contamination by the influence of

また、少なくとも一の対向板の他端部周縁からリブを外方向に突出させて把持領域を形成すれば、突き出たリブに指や把持具等を適宜引っかけて掴んだり、握ることができるので、基板用キャリアの姿勢を縦置きから横置き、あるいは横置きから縦置きに容易に変更することが可能になる。
さらに、横置き使用時に支持片に略水平に支持された基板の一端部周縁と姿勢制御片の最深溝とを離隔させれば、接触に伴い基板の他端部が過度に傾斜するのを防ぐことが可能になる。
In addition, if a rib is projected outward from the peripheral edge of the other end of at least one opposing plate to form a gripping region, a finger or a gripping tool can be appropriately hooked and gripped on the protruding rib, It becomes possible to easily change the posture of the substrate carrier from the vertical position to the horizontal position, or from the horizontal position to the vertical position.
Further, when the peripheral edge of the substrate supported substantially horizontally by the support piece and the deepest groove of the attitude control piece are separated from each other when used horizontally, the other end of the substrate is prevented from being excessively inclined due to contact. It becomes possible.

以下、図面を参照して本発明の好ましい実施の形態を説明すると、本実施形態における基板用キャリアは、図1ないし図10に示すように、複数枚の半導体ウェーハWを収納可能に対向する底板1及び天板20と、これら底板1と天板20の両側部間を接続する左右一対の側板30と、底板1と天板20の背面部間を連結する左右一対の連結柱40とを備え、底板1と天板20の開口した正面部間が半導体ウェーハW用の出し入れ口50とされ、各側板30には、半導体ウェーハWを支持する支持片31が複数並設されて支持片31と支持片31との間には溝32が形成されるとともに、各連結柱40には、半導体ウェーハWに干渉して姿勢制御可能な制御片41が複数並設されて制御片41と制御片41との間には溝42が区画形成されており、必要に応じ、縦置きあるいは横置きにして半導体製造の工程内で使用されたり、搬送されたり、あるいは複数枚の半導体ウェーハWを収納した状態で洗浄槽内の洗浄液に浸漬される。   Hereinafter, a preferred embodiment of the present invention will be described with reference to the drawings. As shown in FIGS. 1 to 10, a substrate carrier in the present embodiment is a bottom plate facing a plurality of semiconductor wafers W so as to be accommodated. 1 and the top plate 20, a pair of left and right side plates 30 connecting the bottom plate 1 and both side portions of the top plate 20, and a pair of left and right connecting columns 40 connecting the bottom plate 1 and the back surface of the top plate 20. The opening between the front surface of the bottom plate 1 and the top plate 20 serves as a loading / unloading port 50 for the semiconductor wafer W. Each side plate 30 includes a plurality of support pieces 31 supporting the semiconductor wafer W arranged in parallel. A groove 32 is formed between the support piece 31, and a plurality of control pieces 41 that can be controlled in attitude by interfering with the semiconductor wafer W are arranged in parallel on each connecting column 40. A groove 42 is formed between Ri, optionally, vertical or or in the horizontally used in the process of semiconductor manufacturing, is immersed in the cleaning liquid in the cleaning tank while accommodating the transported or or a plurality of semiconductor wafers W,.

半導体ウェーハWは、例えば薄く丸くスライスされた口径300mm(12インチ)のシリコンウェーハ等からなり、周縁部に位置合わせ等を容易化するオリフラあるいはノッチが切り欠かれており、基板用キャリアを構成する底板1と天板20との間に複数枚(例えば、25枚又は26枚)が所定のピッチで一列に並んで整列収納される。   The semiconductor wafer W is made of, for example, a silicon wafer having a diameter of 300 mm (12 inches) that is sliced thinly and rounded, and an orientation flat or notch for facilitating alignment and the like is notched in a peripheral portion, and constitutes a substrate carrier. A plurality of sheets (for example, 25 sheets or 26 sheets) are arranged and stored in a line at a predetermined pitch between the bottom plate 1 and the top plate 20.

このような半導体ウェーハWは、半導体の製造工程内で各種の処理や加工が施されることにより、表面Wfに電子回路パターンが形成され、基板用キャリアが縦置き(図2参照)される場合には、露出した状態で垂直に起立、あるいはやや傾斜して起立支持される。これに対し、基板用キャリアが横置き(図1参照)される場合には、露出した状態で略水平に支持される。   Such a semiconductor wafer W is subjected to various processing and processing in the semiconductor manufacturing process, whereby an electronic circuit pattern is formed on the surface Wf, and the substrate carrier is placed vertically (see FIG. 2). Is supported upright while standing upright or slightly inclined. On the other hand, when the substrate carrier is placed horizontally (see FIG. 1), it is supported substantially horizontally in an exposed state.

底板1、天板20、一対の側板30、及び一対の連結柱40は、金型に所定の成形材料を射出・充填する射出成形により一体成形され、半導体ウェーハWが水平になるよう半導体製造用の加工装置に位置決めされ、決定された水平基準面を元に基板用キャリアの高さ方向の寸法が設定される。所定の成形材料としては、特に限定されるものではないが、例えばポリカーボネート、ポリエーテルエーテルケトン、ポリエーテルイミド、自己潤滑性の良好なフッ素樹脂、各種ナイロン、ポリブチレンテレフタレート等からなる各種の熱可塑性樹脂、あるいはこれらの成分の混合材があげられる。   The bottom plate 1, the top plate 20, the pair of side plates 30, and the pair of connecting columns 40 are integrally formed by injection molding in which a predetermined molding material is injected and filled into a mold, so that the semiconductor wafer W is horizontal. The dimension in the height direction of the substrate carrier is set based on the determined horizontal reference plane. The predetermined molding material is not particularly limited, but various thermoplastics such as polycarbonate, polyether ether ketone, polyether imide, fluorine resin having good self-lubricity, various nylons, polybutylene terephthalate, etc. Examples thereof include a resin or a mixture of these components.

底板1と天板20とは、図1や図2に示すように、基本的には半導体ウェーハWよりも一回り大きい肉厚の円板にそれぞれ形成され、両側部が半径外方向に膨出形成されており、一列に並んだ複数枚の半導体ウェーハWを収納可能に空間をおいて対向する。   As shown in FIG. 1 and FIG. 2, the bottom plate 1 and the top plate 20 are basically formed as thick discs that are slightly larger than the semiconductor wafer W, and both sides bulge outward in the radial direction. A plurality of semiconductor wafers W arranged in a row are opposed to each other with a space between them.

底板1は、図3に示すように、一対の側板30や連結柱40の端部と連結される平坦な拡径部2と、この拡径部2の底面に一体に積層される縮径部3とを備え、これら拡径部2と縮径部3との間には、リング形の段差部4が切り欠かれており、この段差部4に図示しないフォークリフトやロボットの平行な一対のレールが干渉して係止することにより、コンベヤの搬送時等に基板用キャリアが確実にピックアップされる。   As shown in FIG. 3, the bottom plate 1 includes a flat diameter-enlarged portion 2 that is connected to the end portions of the pair of side plates 30 and the connecting columns 40, and a reduced-diameter portion that is integrally laminated on the bottom surface of the enlarged-diameter portion 2 3, and a ring-shaped stepped portion 4 is cut out between the enlarged diameter portion 2 and the reduced diameter portion 3, and a pair of parallel rails of a forklift or a robot (not shown) are provided in the stepped portion 4. By interfering and locking, the substrate carrier is reliably picked up when the conveyor is transported.

底板1の半導体ウェーハWや天板20に対向する内面5は、基板用キャリアの背面側から基板用の出し入れ口50方向に向かうに従い徐々に拡開するよう0.5°〜3.0°の角度で傾斜形成され、洗浄液の浸漬時や洗浄時の水切り性、液体の付着を抑制防止するよう機能する。この底板内面の傾斜角度が0.5°〜3.0°の範囲なのは、0.5°未満の場合には、成形時の金型からの離型性が悪化し、逆に3.0°を超える場合には、寸法精度に支障を来たすからである。   The inner surface 5 of the bottom plate 1 facing the semiconductor wafer W and the top plate 20 is 0.5 ° to 3.0 ° so as to gradually expand from the back side of the substrate carrier toward the substrate loading / unloading port 50. It is inclined at an angle and functions to suppress and prevent drainage during cleaning liquid immersion and cleaning and adhesion of liquid. The inclination angle of the inner surface of the bottom plate is in the range of 0.5 ° to 3.0 °. If it is less than 0.5 °, the releasability from the mold during molding deteriorates, and conversely, 3.0 ° This is because if it exceeds the range, the dimensional accuracy will be hindered.

底板1の外面周縁には図1、図2、図7に示すように、剛性を向上させて変形を防止する把持領域6がエンドレスに形成され、この把持領域6が作業者や自動機のハンドリングに資するよう機能する。この把持領域6は、底板1の外面周縁から握持用のリブ7が外方向である下方向に10mm以上突出することにより形成される。   As shown in FIGS. 1, 2, and 7, a gripping area 6 that improves rigidity and prevents deformation is formed endlessly on the outer peripheral edge of the bottom plate 1, and this gripping area 6 is handled by an operator or an automatic machine. It works to contribute. The gripping region 6 is formed by a gripping rib 7 protruding from the outer peripheral edge of the bottom plate 1 by 10 mm or more in the downward direction, which is the outward direction.

底板1の底面の前部両側と後部中央とには図6に示すように、キネマチックカップリングと呼ばれる位置決め具8が平面略Y字を描くようそれぞれ一体的に配設され、この複数の位置決め具8が半導体製造用の加工装置に立設された位置決めピンに嵌入される。各位置決め具8は、一対の長辺と一対の短辺とを有する略長方形のブロックに成形され、表面には位置決め溝9が断面略逆V字形又は断面略逆Y字形に凹み形成されており、この位置決め溝9が加工装置の位置決めピンに上方から嵌入される。この位置決め具8の周面10は、成形の安全性等を考慮して底板1の底面から下方に向かうに従い徐々に狭まる傾斜面に形成される。   As shown in FIG. 6, positioning tools 8 called kinematic couplings are integrally arranged on the both sides of the bottom surface of the bottom plate 1 so as to draw a substantially plane Y, as shown in FIG. The tool 8 is inserted into a positioning pin provided upright on a processing apparatus for semiconductor manufacturing. Each positioning tool 8 is formed into a substantially rectangular block having a pair of long sides and a pair of short sides, and a positioning groove 9 is formed in the surface so as to be recessed in a substantially inverted V-shaped section or a substantially inverted Y-shaped section. The positioning groove 9 is inserted into the positioning pin of the processing apparatus from above. The peripheral surface 10 of the positioning tool 8 is formed in an inclined surface that gradually narrows from the bottom surface of the bottom plate 1 in consideration of molding safety and the like.

なお、位置決め具8の長辺と短辺とをそれぞれ直線的に形成しても良いが、少なくとも短辺側を略く字形に屈曲させたり、湾曲させ、金型からの離型を容易にするようにしても良い。   The long side and the short side of the positioning tool 8 may be formed linearly, but at least the short side is bent or curved in a substantially square shape to facilitate release from the mold. You may do it.

天板20は、半導体ウェーハWや底板1に対向する内面21が基板用キャリアの背面側から基板用の出し入れ口50方向に向かうに従い徐々に拡開するよう0.5°〜3.0°の角度で傾斜形成され、洗浄液の浸漬時や洗浄時の水切り性、液体の付着を抑制防止するよう機能する。この天板20の内面21の傾斜角度が0.5°〜3.0°の範囲なのは、底板1の場合と同様である。   The top plate 20 is 0.5 ° to 3.0 ° so that the inner surface 21 facing the semiconductor wafer W and the bottom plate 1 gradually expands from the back side of the substrate carrier toward the substrate loading / unloading port 50. It is inclined at an angle and functions to suppress and prevent drainage during cleaning liquid immersion and cleaning and adhesion of liquid. The inclination angle of the inner surface 21 of the top plate 20 is in the range of 0.5 ° to 3.0 ° as in the case of the bottom plate 1.

天板20の外面周縁には、図1、図2、図7に示すように、剛性を向上させて変形を防止する把持領域22がエンドレスに形成され、この把持領域22が作業者や自動機のハンドリングに寄与する。この把持領域22は、天板20の外面周縁から握持用のリブ23が外方向である上方向に10mm以上突出することにより形成される。   As shown in FIGS. 1, 2, and 7, a grip region 22 that improves rigidity and prevents deformation is formed endlessly on the outer peripheral edge of the top plate 20. Contributes to the handling of The gripping region 22 is formed by protruding the gripping rib 23 from the outer peripheral edge of the top plate 20 by 10 mm or more upward, which is the outward direction.

一対の側板30は、図1、図3、図8、図9に示すように、半導体ウェーハW用の収納空間をおいて相互に対向し、連結柱40との間に半導体ウェーハWの突き出しに資する空間や液体流通用の空間を区画形成する。各側板30の内面長手方向(図1の上下方向)には、半導体ウェーハWの側部周縁を支持する支持片31が所定のピッチで複数並設され、支持片31と支持片31との間には、断面略コ字形あるいは略U字形の溝32が区画形成される。   As shown in FIGS. 1, 3, 8, and 9, the pair of side plates 30 face each other with a storage space for the semiconductor wafer W, and project the semiconductor wafer W between the connection columns 40. A space to contribute and a space for liquid distribution are formed. In the longitudinal direction of the inner surface of each side plate 30 (vertical direction in FIG. 1), a plurality of support pieces 31 supporting the side edge of the semiconductor wafer W are arranged in parallel at a predetermined pitch, and between the support pieces 31 and 31. In this case, a groove 32 having a substantially U-shaped or U-shaped cross section is defined.

複数の支持片31は、最下段に位置する支持片31Aが水平基準面から所定の間隔をおいて位置し、この最下段に位置する支持片31Aから他の支持片31が間隔(ピッチ)をおいて垂直上方向(ピッチ方向)に並設される。この複数の支持片31のうち最上段に位置する支持片31Bと天板20の内面21との間には、半導体ウェーハW用の傾斜角度規制体33が介在され、この傾斜角度規制体33の半導体ウェーハWに対向する対向面が支持片31の表面と略同一に形成されており、この傾斜角度規制体33がダミーウェーハや汚染防止用のウェーハを選択的に搭載する。   In the plurality of support pieces 31, the support piece 31 </ b> A located at the lowermost stage is located at a predetermined interval from the horizontal reference plane, and the other support piece 31 is spaced (pitch) from the support piece 31 </ b> A located at the lowermost stage. Are arranged in the vertical upward direction (pitch direction). Among the plurality of support pieces 31, an inclination angle restricting body 33 for the semiconductor wafer W is interposed between the support piece 31 </ b> B positioned at the uppermost stage and the inner surface 21 of the top plate 20. The facing surface facing the semiconductor wafer W is formed substantially the same as the surface of the support piece 31, and the tilt angle restricting body 33 selectively mounts a dummy wafer or a contamination preventing wafer.

傾斜角度規制体33は、例えば天板20の内面周縁部が肉厚に形成されたり、側板30の内面端部が肉厚に形成されたり、あるいは側板30の内面に先細りの突片が内方向に突出形成されることにより形成され、基板用キャリアの縦置き時に最上段の支持片31Bに支持された半導体ウェーハWを他の支持片31に支持された半導体ウェーハWと異なる傾斜角度ではなく、略同様の傾斜角度で傾斜させ、最上段の半導体ウェーハWの取り出しを円滑化したり、この半導体ウェーハWのパーティクルに伴う汚染を抑制防止するよう機能する。   The inclination angle restricting body 33 has, for example, a thick inner peripheral edge portion of the top plate 20, a thick inner surface end portion of the side plate 30, or a tapered protrusion on the inner surface of the side plate 30 inward. The semiconductor wafer W formed by projecting to the substrate carrier and supported by the uppermost support piece 31B when the substrate carrier is placed vertically is not at an inclination angle different from that of the semiconductor wafer W supported by the other support piece 31. The semiconductor wafer W is inclined at substantially the same inclination angle, and functions to smoothly take out the uppermost semiconductor wafer W and to prevent or prevent contamination due to particles of the semiconductor wafer W.

各支持片31は、図1ないし図3、図5に示すように、基板用キャリアの前後方向に伸びる断面略先細りの三角形で直線の略板形に形成され、基板用キャリアの背面側に位置する末端部が基板用キャリアの内方向に湾曲して半導体ウェーハWの側部周縁に沿う略半円弧形の屈曲部を形成しており、この屈曲部と隣接する他の支持片31の屈曲部との間には、溝32の底に位置する半導体ウェーハW用の損傷防止片34が一体形成される。   As shown in FIGS. 1 to 3 and 5, each support piece 31 is formed in a substantially plate shape having a substantially tapered triangle and extending in the front-rear direction of the substrate carrier, and is positioned on the back side of the substrate carrier. The distal end of the substrate is curved inwardly of the substrate carrier to form a substantially semicircular arc bent portion along the peripheral edge of the semiconductor wafer W, and the other supporting piece 31 adjacent to the bent portion is bent. A damage preventing piece 34 for the semiconductor wafer W located at the bottom of the groove 32 is integrally formed with the portion.

各支持片31は、図8に示すように、表面(上面)が0°〜2°の角度で傾斜形成されるとともに、裏面が1°〜5°の角度で傾斜形成され、先細りの先端部が丸くR付け(面取り)されており、基板用キャリアの縦置きや横置きにかかわらず、半導体ウェーハWの損傷やマーキングを抑制防止するよう機能する。   As shown in FIG. 8, each support piece 31 is formed such that the front surface (upper surface) is inclined at an angle of 0 ° to 2 °, and the back surface is inclined at an angle of 1 ° to 5 °. Is rounded (chamfered), and functions to suppress and prevent damage and marking of the semiconductor wafer W regardless of whether the substrate carrier is placed vertically or horizontally.

損傷防止片34は、図8に示すように、半導体ウェーハWの側部周縁に対向する対向面35が断面略V字形に凹み形成され、この対向面35の傾斜角度が60°〜85°の範囲、好ましくは半導体ウェーハWの円滑な移動の観点から75°〜82°の範囲に設定されて半導体ウェーハWの滑走や衝撃に伴う損傷を抑制防止するよう機能する。対向面35の傾斜角度が60°〜85°の範囲なのは、60°未満の場合には、半導体ウェーハWが円滑に滑走せずに途中で引っかかるおそれがあり、逆に85°を超える場合には、基板用キャリアの縦置き時に半導体ウェーハWに作用する衝撃が大きくなり、この衝撃に伴い半導体ウェーハWが傷付いたり、欠けるおそれがあるからである。   As shown in FIG. 8, the damage prevention piece 34 has a facing surface 35 that is opposed to the peripheral edge of the semiconductor wafer W and has a substantially V-shaped cross section, and the inclination angle of the facing surface 35 is 60 ° to 85 °. From the viewpoint of smooth movement of the semiconductor wafer W, preferably in the range of 75 ° to 82 °, the semiconductor wafer W functions to suppress and prevent damage due to sliding and impact of the semiconductor wafer W. The inclination angle of the facing surface 35 is in the range of 60 ° to 85 °. If the angle is less than 60 °, the semiconductor wafer W may not be smoothly slid and may be caught on the way. This is because the impact acting on the semiconductor wafer W when the substrate carrier is placed vertically increases, and the semiconductor wafer W may be damaged or chipped due to the impact.

一対の連結柱40は、図1ないし図3に示すように、隣接する側板30や他の連結柱40との間にロボットの半導体ウェーハWの突き出しに資する空間や液体流通用の空間を区画形成する。各連結柱40は、細長い柱に形成され、内面長手方向には半導体ウェーハWの後部周縁に干渉可能な制御片41が所定のピッチで複数並設されており、制御片41と制御片41との間には、基板用キャリアの正面方向に指向する断面略U字形の溝42が区画形成されるとともに、各制御片41が基板用キャリアの横置き時の半導体ウェーハWの撓み量を考慮して各支持片31の半導体ウェーハWを支持する支持面(載置面)よりも下方にずれて位置する。   As shown in FIGS. 1 to 3, the pair of connecting columns 40 form a space that contributes to the protrusion of the semiconductor wafer W of the robot and a space for liquid circulation between the adjacent side plate 30 and other connecting columns 40. To do. Each connecting column 40 is formed in an elongated column, and in the longitudinal direction of the inner surface, a plurality of control pieces 41 that can interfere with the rear periphery of the semiconductor wafer W are arranged in parallel at a predetermined pitch. In between, a groove 42 having a substantially U-shaped cross section directed in the front direction of the substrate carrier is defined, and each control piece 41 takes into account the amount of deflection of the semiconductor wafer W when the substrate carrier is placed horizontally. The support pieces 31 are positioned below the support surface (mounting surface) for supporting the semiconductor wafer W.

複数の制御片41のうち最上段に位置する制御片41Aと天板20の内面21との間には図9や図10に示すように、半導体ウェーハW用の汚染防止体43が介在され、この汚染防止体43が制御片41と略同一に形成されてダミーウェーハや汚染防止用のウェーハを選択的に搭載する。   As shown in FIG. 9 and FIG. 10, a contamination prevention body 43 for the semiconductor wafer W is interposed between the control piece 41 </ b> A located at the top of the plurality of control pieces 41 and the inner surface 21 of the top plate 20. The contamination prevention body 43 is formed substantially the same as the control piece 41 and selectively mounts a dummy wafer or a contamination prevention wafer.

汚染防止体43は、例えば天板20の内面周縁部が肉厚に形成されたり、連結柱40の内面端部が肉厚に形成されたり、あるいは連結柱40の内面に突片が内方向に突出形成されることにより形成され、基板用キャリアの縦置き時に最上段の半導体ウェーハWが他の半導体ウェーハWと略同様の傾斜角度で傾斜するのに寄与し、しかも、最上段の半導体ウェーハWの取り出しを円滑化したり、半導体ウェーハWのパーティクルに伴う汚染を抑制防止する。   For example, the contamination preventing body 43 is formed such that the inner peripheral edge of the top plate 20 is thick, the inner end of the connecting column 40 is formed thick, or the protrusion on the inner surface of the connecting column 40 is inward. The uppermost semiconductor wafer W is formed by projecting and contributes to the inclination of the uppermost semiconductor wafer W at substantially the same inclination angle as the other semiconductor wafers W when the substrate carrier is placed vertically. Is taken out, and contamination associated with particles of the semiconductor wafer W is suppressed and prevented.

複数の制御片41の間には図9や図10に示すように、溝42の底に位置する半導体ウェーハW用の姿勢制御片44が一体形成され、この姿勢制御片44の半導体ウェーハWの後部周縁に対向する対向面45が凹み形成される。この姿勢制御片44は、先端部が丸く面取りされた断面略板形に形成され、半導体ウェーハWの径や厚さ、一体形成の位置等を考慮して高さが調整される。   9 and 10, a posture control piece 44 for the semiconductor wafer W positioned at the bottom of the groove 42 is integrally formed between the plurality of control pieces 41, and the semiconductor wafer W of the posture control piece 44 is formed. A facing surface 45 facing the rear periphery is formed as a recess. The posture control piece 44 is formed in a substantially plate shape with a rounded chamfered tip, and the height is adjusted in consideration of the diameter and thickness of the semiconductor wafer W, the position where it is integrally formed, and the like.

姿勢制御片44の対向面45は、図10に示すように、半導体ウェーハWの後部周縁に接触して所定の角度で傾斜させる第一の傾斜面46と、この第一の傾斜面46の反対側に位置して半導体ウェーハWを所定の角度で傾斜させる第二の傾斜面47と、これら第一、第二の傾斜面46・47の間に位置して半導体ウェーハWとは非接触の最深溝48とから形成され、基板用キャリアの横置き時に半導体ウェーハWの姿勢を水平に制御したり、基板用キャリアの縦置き時に半導体ウェーハWを1°〜3°の傾斜角度で起立して傾斜させたり、隣接する半導体ウェーハW同士の接触を抑制防止する。   As shown in FIG. 10, the facing surface 45 of the attitude control piece 44 is in contact with the rear peripheral edge of the semiconductor wafer W to be inclined at a predetermined angle, and opposite to the first inclined surface 46. A second inclined surface 47 that is located on the side and inclines the semiconductor wafer W at a predetermined angle, and is located between the first and second inclined surfaces 46 and 47 and is in contact with the semiconductor wafer W at the most The semiconductor wafer W is formed from the deep groove 48 to control the posture of the semiconductor wafer W horizontally when the substrate carrier is horizontally placed, or to tilt the semiconductor wafer W upright at an inclination angle of 1 ° to 3 ° when the substrate carrier is vertically placed. Or preventing contact between adjacent semiconductor wafers W.

姿勢制御片44の第一、第二の傾斜面46・47は、同図に示すように非対称に形成され、最深溝48を姿勢制御片44と姿勢制御片44との間における溝42の中心線から複数の制御片41の配列方向にややずらすよう機能する。第一の傾斜面46は例えば三角リブの形成により形成されて半導体ウェーハWの一方向への傾斜を容易化し、第二の傾斜面47は三角リブよりも背の高い突片の形成により形成される。   The first and second inclined surfaces 46 and 47 of the posture control piece 44 are formed asymmetrically as shown in the figure, and the deepest groove 48 is formed at the center of the groove 42 between the posture control piece 44 and the posture control piece 44. It functions to be slightly shifted from the line in the arrangement direction of the plurality of control pieces 41. The first inclined surface 46 is formed, for example, by forming a triangular rib to facilitate the inclination of the semiconductor wafer W in one direction, and the second inclined surface 47 is formed by forming a protruding piece that is taller than the triangular rib. The

最深溝48は、第一の傾斜面46側が緩やかで、第二の傾斜面47側が起立した急峻な形に形成され、制御片41が支持片31よりも下方に位置する関係上、制御片41と同様、基板用キャリアの横置き使用時に支持片31に略水平に支持された半導体ウェーハWの後部周縁と接触することなく離隔する。   The deepest groove 48 is formed in a steep shape in which the first inclined surface 46 side is gentle and the second inclined surface 47 side is erected, and the control piece 41 is positioned below the support piece 31. Similarly to the above, the substrate carrier is separated from the rear edge of the semiconductor wafer W supported substantially horizontally by the support piece 31 when the substrate carrier is used horizontally.

姿勢制御片44の対向面45が半導体ウェーハWを1°〜3°の角度で傾斜させるのは、1°以上の角度で傾斜すれば、基板用キャリアの縦置き時における半導体ウェーハWが左右両方向に傾斜するおそれを排除することができるからである。また、3°未満の角度で傾斜すれば、複数の制御片41の間隔を大きくする必要がなく、制御片41の長さを適切な長さとすることができる。   The opposing surface 45 of the attitude control piece 44 inclines the semiconductor wafer W at an angle of 1 ° to 3 °. If the semiconductor wafer W is inclined at an angle of 1 ° or more, the semiconductor wafer W is vertically oriented when the substrate carrier is placed vertically. This is because it is possible to eliminate the possibility of inclining. Moreover, if it inclines at an angle of less than 3 degrees, it is not necessary to enlarge the space | interval of the some control piece 41, and the length of the control piece 41 can be made into suitable length.

なお、溝42の中心線の一方に第一の傾斜面46を形成し、第二の傾斜面47と最深溝48との境界付近から第二の傾斜面47が上方に傾斜するよう形成すれば、半導体ウェーハWが一方に傾斜するよう容易に制御することができる。   If the first inclined surface 46 is formed on one of the center lines of the groove 42 and the second inclined surface 47 is inclined upward from the vicinity of the boundary between the second inclined surface 47 and the deepest groove 48. The semiconductor wafer W can be easily controlled to be tilted to one side.

上記構成において、横置きの基板用キャリアに半導体ウェーハWを収納する場合には、図1に示す基板用キャリアの出し入れ口50に半導体ウェーハWをロボットにより挿入して左右一対の支持片31に略水平に支持させ、複数の制御片41間に半導体ウェーハWの後部周縁を溝42を介し非接触で嵌合させ、半導体ウェーハWの姿勢を制御してその水平精度を保持するようにすれば、横置きの基板用キャリアに半導体ウェーハWを収納することができる。
係る作業を繰り返すことにより、基板用キャリアに複数枚の半導体ウェーハWを一列に整列収納することができる。
In the above configuration, when the semiconductor wafer W is stored in the horizontally placed substrate carrier, the semiconductor wafer W is inserted into the loading / unloading port 50 of the substrate carrier shown in FIG. If it is supported horizontally, the rear periphery of the semiconductor wafer W is fitted between the plurality of control pieces 41 in a non-contact manner through the groove 42, the attitude of the semiconductor wafer W is controlled, and the horizontal accuracy is maintained. The semiconductor wafer W can be accommodated in a horizontal substrate carrier.
By repeating such operations, a plurality of semiconductor wafers W can be aligned and stored in a row on the substrate carrier.

この際、半導体ウェーハWは、電子回路パターンの形成される表面Wfが上側に位置するよう収納されることが好ましい。また、支持片31に略水平に支持された半導体ウェーハWの後部周縁と制御片41や姿勢制御片44の最深溝48とが基本的には接触しないので、半導体ウェーハWの後部が持ち上げられることにより、半導体ウェーハWの前部が過度に前下がりに傾斜してしまうのを防止することができる。   At this time, the semiconductor wafer W is preferably stored so that the surface Wf on which the electronic circuit pattern is formed is positioned on the upper side. Further, since the rear peripheral edge of the semiconductor wafer W supported substantially horizontally by the support piece 31 and the deepest groove 48 of the control piece 41 or the attitude control piece 44 are not basically in contact with each other, the rear part of the semiconductor wafer W is lifted. Thus, it is possible to prevent the front portion of the semiconductor wafer W from being excessively inclined downward.

一方、洗浄槽内の洗浄液に複数枚の半導体ウェーハWを整列収納した状態で浸漬する場合には、図1に示す基板用キャリアを横に寝かせて正面の出し入れ口50を上方に向け、半導体ウェーハWを左右一対の支持片31に支持させるとともに、制御片41に隣接する半導体ウェーハW同士の接触を回避させ、縦一列に並んだ半導体ウェーハWの姿勢を横一列に変更して各半導体ウェーハWを起立あるいは僅かな角度で傾斜させ、洗浄槽内に基板用キャリアを沈めれば、出し入れ口50、側板30と連結柱40の間の空間、及び一対の連結柱40の間の空間から洗浄液がそれぞれ流入し、洗浄液に半導体ウェーハWを浸漬することができる。   On the other hand, when immersing a plurality of semiconductor wafers W in the cleaning solution in the cleaning tank in an aligned and housed state, the substrate carrier shown in FIG. Each of the semiconductor wafers W is supported by the pair of left and right support pieces 31 and avoids contact between the semiconductor wafers W adjacent to the control piece 41 and changes the posture of the semiconductor wafers W arranged in a vertical row to a horizontal row. When the substrate carrier is submerged in the cleaning tank by standing up or tilting at a slight angle, the cleaning liquid is discharged from the inlet / outlet port 50, the space between the side plate 30 and the connecting column 40, and the space between the pair of connecting columns 40. Each flows in and the semiconductor wafer W can be immersed in the cleaning liquid.

この際、基板用キャリアを構成する底板1と天板20の把持領域6・22、すなわち突き出た剛性のリブ7・23に指を適宜引っかけて強く握持すれば、基板用キャリアを落とすことなくその姿勢をきわめて容易に変更することができる。また、傾斜角度規制体33が最上段の支持片31Bに支持された半導体ウェーハWを他の支持片31に支持された半導体ウェーハWと同様の傾斜角度で同方向に傾斜させるので、最上段の半導体ウェーハWが他の半導体ウェーハWよりも大きく傾き、姿勢が不安定化することがない。   At this time, if the base plate 1 and the top plate 20 constituting the substrate carrier and the gripping regions 6 and 22, that is, the protruding rigid ribs 7 and 23 are appropriately hooked and firmly held, the substrate carrier is not dropped. The posture can be changed very easily. Further, since the tilt angle restricting body 33 tilts the semiconductor wafer W supported by the uppermost support piece 31B in the same direction at the same tilt angle as the semiconductor wafer W supported by the other support pieces 31, the uppermost stage support piece 31B. The semiconductor wafer W does not tilt more than the other semiconductor wafers W, and the posture does not become unstable.

また、汚染防止体43が傾斜角度規制体33と同様の作用効果を発揮する他、天板20と最上段の半導体ウェーハWとの接触を規制することにより、最上段の半導体ウェーハWの状態を、半導体ウェーハWが隣接する他の一対の半導体ウェーハWに挟まれるという通常の状態と同様にすることができるので、天板内面の汚れが最上段の半導体ウェーハWに移行することがない。   Further, the contamination prevention body 43 exhibits the same function and effect as the inclination angle regulation body 33, and also regulates the contact between the top plate 20 and the uppermost semiconductor wafer W, thereby changing the state of the uppermost semiconductor wafer W. Since the semiconductor wafer W can be made in the same manner as a normal state where it is sandwiched between another pair of adjacent semiconductor wafers W, dirt on the inner surface of the top plate does not move to the uppermost semiconductor wafer W.

洗浄液に半導体ウェーハWを浸漬した後、洗浄槽内から基板用キャリアを引き上げれば、出し入れ口50、側板30と連結柱40の間の空間、及び一対の連結柱40の間の空間から洗浄液がそれぞれ流出し、洗浄槽から半導体ウェーハWを取り出して洗浄作業を終了することができる。   After immersing the semiconductor wafer W in the cleaning liquid, if the substrate carrier is pulled up from the cleaning tank, the cleaning liquid is discharged from the inlet / outlet port 50, the space between the side plate 30 and the connecting column 40, and the space between the pair of connecting columns 40. Each of them flows out, the semiconductor wafer W is taken out from the cleaning tank, and the cleaning operation can be completed.

この際、基板用キャリアを構成する底板1と天板20の内面5・21が平坦ではなく、それぞれ傾斜しているので、基板用キャリア内に洗浄液が溜まることなく、円滑に下方向に流動して側板30と連結柱40の間の空間、及び一対の連結柱40の間から排出される。   At this time, since the bottom plate 1 and the inner surfaces 5 and 21 of the top plate 20 constituting the substrate carrier are not flat but inclined, the cleaning liquid does not accumulate in the substrate carrier and smoothly flows downward. The space between the side plate 30 and the connecting column 40 and the space between the pair of connecting columns 40 are discharged.

上記構成によれば、底板1と天板20とに滑りにくい手動用の把持領域6・22をそれぞれ設けるので、作業者のハンドリングをきわめて容易にしたり、剛性を著しく向上させたり、成形時の変形を有効に抑制防止することができる。また、把持領域6・22の形成により、基板用キャリアの強度を高めて寸法精度を向上させることができるので、製造時のばらつきを防いだり、半導体ウェーハWの挿入や取り出しに支障を来たすことがなく、しかも、半導体ウェーハWを取り扱うロボットに対するティーチングの困難性を有効に解消することができる。   According to the above configuration, since the grip areas 6 and 22 for manual operation that are difficult to slip are provided on the bottom plate 1 and the top plate 20, respectively, handling of the operator is extremely facilitated, rigidity is remarkably improved, and deformation during molding is performed. Can be effectively suppressed and prevented. Further, the formation of the gripping regions 6 and 22 can increase the strength of the carrier for the substrate and improve the dimensional accuracy, thereby preventing variations during manufacture and hindering the insertion and removal of the semiconductor wafer W. In addition, it is possible to effectively eliminate the difficulty of teaching the robot that handles the semiconductor wafer W.

また、底板1と天板20の内面5・21をそれぞれ傾斜させるので、例え洗浄槽内に基板用キャリアが浸漬された場合でも、洗浄液の付着を抑制して水切り性を大幅に向上させることができ、これにより後の作業の円滑化、迅速化、容易化を図ることが可能になる。また、姿勢制御片44の対向面45を第一、第二の傾斜面46・47、及び最深溝48とから形成するので、半導体ウェーハWとの接触領域を減少させて汚染を防止したり、複数枚の半導体ウェーハWを同方向に整列傾斜させて逆方向に傾く等の不揃いを解消することが可能になる。   In addition, since the inner surfaces 5 and 21 of the bottom plate 1 and the top plate 20 are inclined, respectively, even when the substrate carrier is immersed in the cleaning tank, it is possible to suppress the adhesion of the cleaning liquid and greatly improve drainage. This makes it possible to facilitate, speed up and facilitate subsequent work. Further, since the facing surface 45 of the posture control piece 44 is formed by the first and second inclined surfaces 46 and 47 and the deepest groove 48, the contact area with the semiconductor wafer W is reduced to prevent contamination, It is possible to eliminate irregularities such as aligning and tilting a plurality of semiconductor wafers W in the same direction and tilting in the opposite direction.

さらに、姿勢制御片44の最深溝48に半導体ウェーハWの後部周縁が垂直に直接衝突することがないので、この垂直の強い衝突に伴う半導体ウェーハWの破損防止が大いに期待できる。   Further, since the rear peripheral edge of the semiconductor wafer W does not directly collide with the deepest groove 48 of the attitude control piece 44, it is highly possible to prevent damage to the semiconductor wafer W due to the strong vertical collision.

なお、上記実施形態では底板1と天板20とに把持領域6・22をそれぞれ設けたが、何らこれに限定されるものではなく、片方のみに把持領域を設けても良い。また、底板1と天板20のうち、片方のみの内面を傾斜させても良い。また、底板1に複数の位置決め具8を一体形成したが、底板1に別体の位置決め具8を後から装着しても良い。また、底板1と天板20との間に、支持片31を並べ備えた別部材の側板30を摩擦係合手段やボルト等の締結具を用いて連結しても良いし、底板1及び天板20と別部材の側板30とをインサート成形で一体化しても良い。   In the above embodiment, the grip regions 6 and 22 are provided on the bottom plate 1 and the top plate 20, respectively, but the present invention is not limited to this, and the grip region may be provided on only one side. Further, the inner surface of only one of the bottom plate 1 and the top plate 20 may be inclined. Further, although the plurality of positioning tools 8 are integrally formed on the bottom plate 1, a separate positioning tool 8 may be attached to the bottom plate 1 later. Further, a separate side plate 30 provided with support pieces 31 may be connected between the bottom plate 1 and the top plate 20 by using a frictional engagement means, a fastener such as a bolt, or the like. You may integrate the board 20 and the side plate 30 of another member by insert molding.

また、複数の支持片31の屈曲部間に損傷防止片34を一体形成したが、何らこれに限定されるものではなく、例えば複数の支持片31の間に損傷防止片34を形成することもできる。また、支持片31の先端部や表面に半導体ウェーハW用の飛び出し防止突起を形成したり、飛び出し防止形状を形成することもできる。また、損傷防止片34の対向面35は、対称の断面略V字形に形成することができるし、非対称の断面略V字形に形成することもできる。   Moreover, although the damage prevention piece 34 was integrally formed between the bending parts of the some support piece 31, it is not limited to this at all, For example, the damage prevention piece 34 may be formed between the some support pieces 31. it can. Further, a protrusion preventing protrusion for the semiconductor wafer W can be formed on the tip or the surface of the support piece 31, or a protrusion preventing shape can be formed. Further, the facing surface 35 of the damage preventing piece 34 can be formed in a substantially V-shaped symmetric cross section, or can be formed in a substantially V-shaped asymmetric cross section.

また、底板1と天板20の背面部間を一対の連結柱40で連結しても良いが、単一の連結柱40で連結しても良いし、所定の大きさの連結板で連結することも可能である。さらに、底板1と天板20の背面部間に別部材の連結柱40を摩擦係合手段やボルト等の締結具を用いて連結しても良いし、底板1及び天板20と別部材の連結柱40とをインサート成形で一体化することも可能である。   The bottom plate 1 and the back surface of the top plate 20 may be connected by a pair of connecting columns 40, but may be connected by a single connecting column 40, or connected by a connecting plate of a predetermined size. It is also possible. Further, another connecting column 40 may be connected between the bottom plate 1 and the back surface of the top plate 20 using a fastener such as a friction engagement means or a bolt, or the bottom plate 1 and the top plate 20 may be connected to another member. It is also possible to integrate the connecting column 40 by insert molding.

本発明に係る基板用キャリアの実施形態における横置き時の基板用キャリアを模式的に示す斜視説明図である。It is a perspective explanatory view showing typically the substrate carrier at the time of horizontal placement in the embodiment of the substrate carrier according to the present invention. 本発明に係る基板用キャリアの実施形態における縦置き時の基板用キャリアを模式的に示す斜視説明図である。It is a perspective explanatory view showing typically the substrate carrier at the time of vertical placement in the embodiment of the substrate carrier according to the present invention. 本発明に係る基板用キャリアの実施形態における横置き時の基板用キャリアを模式的に示す正面説明図である。It is front explanatory drawing which shows typically the board | substrate carrier at the time of horizontal placement in embodiment of the board | substrate carrier concerning this invention. 本発明に係る基板用キャリアの実施形態における横置き時の基板用キャリアを模式的に示す部分断面側面図である。It is a partial section side view showing typically the substrate carrier at the time of horizontal placement in the embodiment of the substrate carrier concerning the present invention. 本発明に係る基板用キャリアの実施形態を模式的に示す平面説明図である。It is a plane explanatory view showing typically an embodiment of a substrate carrier concerning the present invention. 本発明に係る基板用キャリアの実施形態を模式的に示す底面説明図である。It is bottom explanatory drawing which shows typically embodiment of the carrier for substrates which concerns on this invention. 本発明に係る基板用キャリアの実施形態における縦置き時の基板用キャリアを模式的に示す部分断面側面図である。It is a partial section side view showing typically the substrate carrier at the time of vertical placement in the embodiment of the substrate carrier concerning the present invention. 本発明に係る基板用キャリアの実施形態における支持片と損傷防止片とを模式的に示す要部断面説明図である。It is principal part sectional explanatory drawing which shows typically the support piece and damage prevention piece in embodiment of the carrier for substrates which concerns on this invention. 本発明に係る基板用キャリアの実施形態における縦置き時の基板用キャリアの支持片と制御片とを模式的に示す断面説明図である。It is sectional explanatory drawing which shows typically the support piece and control piece of the board | substrate carrier at the time of vertical installation in embodiment of the board | substrate carrier concerning this invention. 図9の要部断面説明図である。FIG. 10 is an explanatory cross-sectional view of a main part of FIG. 9.

符号の説明Explanation of symbols

1 底板(対向板)
4 段差部
5 内面
6 把持領域
7 リブ
20 天板(対向板)
21 内面
22 把持領域
23 リブ
30 側板
31 支持片
31A 最下段の支持片
31B 最上段の支持片(最も端に位置する支持片)
32 溝
33 傾斜角度規制体
34 損傷防止片
35 対向面
40 連結柱(連結板)
41 制御片
41A 制御片(最も端に位置する制御片)
42 溝
43 汚染防止体
44 姿勢制御片
45 対向面
46 第一の傾斜面
47 第二の傾斜面
48 最深溝
50 出し入れ口
W 半導体ウェーハ(基板)
1 Bottom plate (opposite plate)
4 Stepped portion 5 Inner surface 6 Holding region 7 Rib 20 Top plate (opposite plate)
21 inner surface 22 grip region 23 rib 30 side plate 31 support piece 31A bottom support piece 31B top support piece (support piece located at the end)
32 Groove 33 Inclination angle regulating body 34 Damage prevention piece 35 Opposing surface 40 Connecting column (connecting plate)
41 Control piece 41A Control piece (control piece located at the end)
42 Groove 43 Contamination prevention body 44 Posture control piece 45 Opposing surface 46 First inclined surface 47 Second inclined surface 48 Deepest groove 50 Outlet / inlet W Semiconductor wafer (substrate)

Claims (7)

複数枚の基板を収納可能に対向する一対の対向板と、この一対の対向板の両側部間を接続する複数の側板と、一対の対向板の一端部間の少なくとも一部を覆う連結板とを備え、一対の対向板の他端部間を基板用の出し入れ口とし、各側板に、基板の側部周縁を支持する支持片を所定のピッチで複数配列するとともに、連結板に、基板の一端部周縁に干渉可能な制御片を所定のピッチで複数配列して制御片と制御片との間には溝を形成し、縦置きあるいは横置きにして使用される基板用キャリアであって、
一対の対向板のうち少なくとも一の対向板の内面を、一対の対向板の一端部側から基板用の出し入れ口方向に向かうに従い徐々に広がるよう0.5°〜3.0°の角度で傾斜させ、少なくとも一の対向板の他端部周縁に把持領域を形成したことを特徴とする基板用キャリア。
A pair of opposing plates facing each other so that a plurality of substrates can be stored; a plurality of side plates connecting both side portions of the pair of opposing plates; and a connecting plate covering at least a part between one end portions of the pair of opposing plates; Between the other ends of the pair of opposing plates, and a plurality of support pieces that support the peripheral edges of the side of the substrate are arranged on each side plate at a predetermined pitch. A plurality of control pieces capable of interfering with the peripheral edge of one end portion are arranged at a predetermined pitch, a groove is formed between the control piece and the control piece, and is a substrate carrier used in a vertical or horizontal orientation,
The inner surface of at least one counter plate of the pair of counter plates is inclined at an angle of 0.5 ° to 3.0 ° so as to gradually spread from one end portion side of the pair of counter plates toward the loading / unloading port for the substrate. And a gripping region is formed on the periphery of the other end of at least one counter plate.
少なくとも一の対向板の内面と複数の支持片のうち最も端に位置する支持片との間に基板用の傾斜角度規制体を介在した請求項1記載の基板用キャリア。   2. The substrate carrier according to claim 1, wherein an inclination angle regulating body for the substrate is interposed between the inner surface of at least one counter plate and the support piece located at the end of the plurality of support pieces. 少なくとも一の対向板の内面と複数の制御片のうち最も端に位置する制御片との間に基板用の汚染防止体を介在した請求項1又は2記載の基板用キャリア。   The substrate carrier according to claim 1 or 2, wherein a substrate anti-contamination body is interposed between the inner surface of at least one counter plate and the control piece located at the end of the plurality of control pieces. 少なくとも一の対向板の他端部周縁からリブを外方向に突出させて把持領域を形成した請求項1、2、又は3記載の基板用キャリア。   The substrate carrier according to claim 1, 2, or 3, wherein a grip region is formed by projecting a rib outward from the periphery of the other end of at least one counter plate. 各支持片を略板形に形成してその対向板の一端部側に位置する一端部を対向板の内方向に屈曲する屈曲部に形成し、複数の支持片の少なくとも屈曲部の間に基板用の損傷防止片を備えてその基板の側部周縁に対向する対向面を略V字形に形成し、この損傷防止片の対向面の傾斜角度を60°〜85°の範囲とした請求項1ないし4いずれかに記載の基板用キャリア。   Each support piece is formed in a substantially plate shape, and one end portion located on one end side of the opposite plate is formed as a bent portion bent inward of the opposite plate, and the substrate is provided between at least the bent portions of the plurality of support pieces. An opposing surface that is provided with a damage preventing piece for use and is opposed to the side edge of the substrate is formed in a substantially V shape, and the inclination angle of the facing surface of the damage preventing piece is in the range of 60 ° to 85 °. 5. The substrate carrier according to any one of 4 to 4. 複数の制御片の間に基板用の姿勢制御片を備えてその基板の一端部周縁に対向する対向面を凹み形成し、この姿勢制御片の対向面を、第一の傾斜面と、この第一の傾斜面の反対側に位置する第二の傾斜面と、これら第一、第二の傾斜面の間に位置する最深溝とから形成し、第一、第二の傾斜面を非対称にして最深溝を制御片と制御片との間における溝の中心線からずらすようにした請求項1ないし5いずれかに記載の基板用キャリア。   A posture control piece for the substrate is provided between the plurality of control pieces, and a facing surface facing the peripheral edge of the one end of the substrate is recessed, and the facing surface of the posture control piece is formed with the first inclined surface and the first inclined surface. A second inclined surface located on the opposite side of the one inclined surface and a deepest groove positioned between the first and second inclined surfaces, and the first and second inclined surfaces are made asymmetric. 6. The substrate carrier according to claim 1, wherein the deepest groove is shifted from a center line of the groove between the control piece and the control piece. 横置き使用時に支持片に略水平に支持された基板の一端部周縁と姿勢制御片の最深溝とを離隔させるようにした請求項6記載の基板用キャリア。   7. The substrate carrier according to claim 6, wherein a peripheral edge of one end of the substrate supported substantially horizontally by the support piece during horizontal use is separated from a deepest groove of the attitude control piece.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014007344A (en) * 2012-06-26 2014-01-16 Disco Abrasive Syst Ltd Housing cassette
CN109148342A (en) * 2017-06-19 2019-01-04 东京毅力科创株式会社 Substrate holder and the substrate board treatment for having used the substrate holder

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