JP5152393B2 - Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 - Google Patents
Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 Download PDFInfo
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- JP5152393B2 JP5152393B2 JP2011235360A JP2011235360A JP5152393B2 JP 5152393 B2 JP5152393 B2 JP 5152393B2 JP 2011235360 A JP2011235360 A JP 2011235360A JP 2011235360 A JP2011235360 A JP 2011235360A JP 5152393 B2 JP5152393 B2 JP 5152393B2
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- group iii
- iii nitride
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- 239000004065 semiconductor Substances 0.000 title claims description 269
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- 229910002601 GaN Inorganic materials 0.000 claims description 51
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 50
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
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- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
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|---|---|---|---|
| JP2011235360A JP5152393B2 (ja) | 2011-10-26 | 2011-10-26 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
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| JP2011235360A JP5152393B2 (ja) | 2011-10-26 | 2011-10-26 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
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|---|---|---|---|
| JP2010021502A Division JP2011003880A (ja) | 2010-02-02 | 2010-02-02 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
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| Publication Number | Publication Date |
|---|---|
| JP2012019249A JP2012019249A (ja) | 2012-01-26 |
| JP2012019249A5 JP2012019249A5 (https=) | 2012-08-02 |
| JP5152393B2 true JP5152393B2 (ja) | 2013-02-27 |
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| JP2011235360A Expired - Fee Related JP5152393B2 (ja) | 2011-10-26 | 2011-10-26 | Ｉｉｉ族窒化物半導体レーザ素子、及びｉｉｉ族窒化物半導体レーザ素子を作製する方法 |
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Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4601808B2 (ja) * | 1999-12-06 | 2010-12-22 | パナソニック株式会社 | 窒化物半導体装置 |
| JP3833674B2 (ja) * | 2004-06-08 | 2006-10-18 | 松下電器産業株式会社 | 窒化物半導体レーザ素子 |
| JP4767020B2 (ja) * | 2006-01-05 | 2011-09-07 | パナソニック株式会社 | 窒化物系化合物半導体素子の製造方法 |
| JP2008235804A (ja) * | 2007-03-23 | 2008-10-02 | Rohm Co Ltd | 発光素子 |
| JP2009081336A (ja) * | 2007-09-27 | 2009-04-16 | Sanyo Electric Co Ltd | 窒化物系半導体レーザ素子およびその製造方法 |
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| JP2012019249A (ja) | 2012-01-26 |
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