JP5152257B2 - Method for manufacturing solid-state imaging device - Google Patents

Description

The present invention relates to a method for manufacturing a solid-state imaging device .

  Solid-state imaging devices are roughly classified into the following two types. One is an amplification type solid-state imaging device represented by a CMOS (Complementary Metal Oxide Semiconductor) image sensor. The other is a charge transfer type solid-state imaging device represented by a CCD (Charge Coupled Device) image sensor.

  A CMOS solid-state imaging device includes a plurality of pixels each including a photodiode (PD) serving as a photoelectric conversion element and a plurality of pixel transistors (MOS transistors), two-dimensionally arranged, and arranged around the imaging region. And a peripheral circuit. The CCD solid-state imaging device has an imaging region including a photodiode (PD) serving as a plurality of photoelectric conversion elements arranged two-dimensionally and a vertical transfer register having a CCD structure arranged corresponding to each photodiode row. . The CCD solid-state imaging device further includes a horizontal transfer register having a CCD structure that transfers signal charges from the imaging region in the horizontal direction, an output unit, and peripheral circuits that constitute a signal processing circuit.

  For example, these solid-state imaging devices represented by digital still cameras generally use primary color (green (G) / red (R) / blue (B)) color filters. As a material for these color filters, a dye-incorporated photoresist in which a pigment or a dye is internally added is used. Examples of conventional techniques for improving the processing accuracy of color filters include Patent Document 1 and Patent Document 2.

  In the color filter forming method described in Patent Document 1, a first color filter material film is formed on a substrate, and dry etching is performed through a resist mask formed thereon to form a first color filter layer. Form. The same process is repeated to form the second color filter layer and the third color filter layer.

  In the method for forming a color filter described in Patent Document 2, a positive photoresist film is formed on a substrate, and a portion corresponding to the first color of the positive photoresist film is exposed and developed to form a groove, The first color pigment dispersion is poured into the groove and cured. Next, a portion corresponding to the second color of the positive photoresist film is exposed and developed to form a groove, and a pigment dispersion of the second color is injected into the groove and cured. Further, a portion corresponding to the third color of the positive photoresist film is exposed and developed in the same manner to form a groove, and a third color pigment dispersion is injected into the groove and cured. In this way, a color filter is formed.

JP 2007-208051 A JP-A-5-199114

  By the way, in recent years, pixel miniaturization in solid-state imaging devices has progressed, and when the above-described color filter material using a general dye-added photoresist is used, the processing accuracy such as dimensional controllability of this material is approaching the limit. is there. This material is patterned for each color, for example, in the order of red, green, and blue. However, in addition to the processing accuracy described above, problems such as color mixing caused by misalignment of each color during exposure are also serious. It will be a thing. In addition, in order to maintain and improve the sensitivity characteristics of the solid-state image pickup device as the pixels of the solid-state image pickup device become finer, it is necessary to reduce the thickness of the color filter, and a breakthrough technique is required for these problems.

  Here, the breakthrough technique refers to a technique for increasing the composition ratio that contributes to the photolithography function by developing a photoresist base composition, a composition, or introducing a new dye having high absorbance. Further, it refers to a technique other than photolithography, a combination of a photolithography method and, for example, a dry etching method, a pattern formation technique based on these combinations, and the like.

  On the other hand, Patent Documents 1 and 2 are known as techniques for improving color filter processing accuracy. However, in the former patent document 1, the first color filter is dry-etched with a photosensitive photoresist mask, and the three colors of the color filter cannot be formed by self-alignment. For this reason, improvement in overlay accuracy cannot be expected.

  In the latter Patent Document 2, a positive photoresist film is formed and patterned, and then a first color pigment dispersion material is injected and cured to form a first color filter. At this time, in order to prevent mixing of the positive photoresist and the first color filter, it is necessary to cure the positive photoresist by heat or ultraviolet irradiation. However, in this case, the photosensitive agent in the positive photoresist is decomposed and loses its photosensitivity, making it impossible to form a color filter pattern, which is not practical.

In view of the above points, improvement in processing accuracy of the color filter, Ru der provides a method for manufacturing the solid-state imaging apparatus capable of suppressing such a color mixture.

  The manufacturing method of the solid-state imaging device according to the present invention includes the following steps. The present invention provides a first color filter component, or a second color filter component and a third color filter component in an opening of a hard mask formed on the surface of an imaging region in which a plurality of pixels having photoelectric conversion elements are arranged. The process of forming either of these is included. Next, there is a step of forming the remaining color filter component in the opening formed by removing the hard mask. In this way, the present invention forms a color filter in which the periphery of each of the second color filter component and the third color filter component is surrounded by the first color filter component.

  In the method for manufacturing a solid-state imaging device according to the present invention, the filter components of the first color, the second color, and the third color are formed by self-alignment using a hard mask. For this reason, dimensional accuracy improves and a color filter can be formed with high processing accuracy. In addition, since the first color, the second color, and the third color filter components do not overlap, a solid-state imaging device in which color mixing is suppressed can be manufactured.

The manufacturing method of the solid-state imaging device according to the present invention includes the following steps. The present invention provides a step of forming a first color filter component having an opening formed on the surface of an imaging region in which a plurality of pixels having photoelectric conversion elements are arranged, and an opening from the surface of the first color filter component. Forming an inorganic film over the entire inner surface. Next, a step of forming a second color filter component and a third color filter component, each of which is selectively surrounded by the first color filter component, in the opening, and the second color filter and the third color filter component, Smoothing the inorganic film on the surface of the first color filter component.

  In the method for manufacturing a solid-state imaging device according to the present invention, the second-layer and third-layer filter components are formed by self-alignment with respect to the first-color filter component. For this reason, dimensional accuracy improves and a color filter can be formed with high processing accuracy. In addition, since the first color, the second color, and the third color filter components do not overlap, a solid-state imaging device in which color mixing is suppressed can be manufactured. An inorganic film remains on the surface of the first color filter component and the boundary between adjacent different color filter components. The presence of an inorganic film on the surface of the first color filter component improves the light resistance of the first color filter component, and the first color filter component contains a dye-based pigment that has poor light resistance but excellent spectral characteristics. It can be formed of a filter material. The presence of an inorganic film at the boundary between different color filter components prevents mutual diffusion of pigments and suppresses the occurrence of color mixing.

The manufacturing method of the solid-state imaging device according to the present invention includes the following steps. The present invention provides a step of forming a first color filter component material film having an inorganic film on the surface of an imaging region in which a plurality of pixels having photoelectric conversion elements are arranged, and the first color filter together with the inorganic film Forming a first color filter component with the remaining first color filter component material film by forming an opening in the component material film; Next, a step of forming a second color filter component and a third color filter component, each of which is selectively surrounded by the first color filter component, in the opening, and the second color filter component and the third color filter component are formed. And smoothing the inorganic film on the surface of the first color filter component.

  In the method for manufacturing a solid-state imaging device according to the present invention, the second-layer and third-layer filter components are formed by self-alignment with respect to the first-color filter component. For this reason, dimensional accuracy improves and a color filter can be formed with high processing accuracy. In addition, since the first color, the second color, and the third color filter components do not overlap, a solid-state imaging device in which color mixing is suppressed can be manufactured. Since the inorganic film remains on the surface of the first color filter component, the light resistance of the first color filter component is improved, and the filter material contains a dye-based pigment that is inferior in light resistance but excellent in spectral characteristics as the first color filter component Can be formed.

The solid-state imaging device has an imaging region in which a plurality of pixels having photoelectric conversion elements are arranged. In addition, the first color filter component, the second color filter component surrounded by the first color filter component and surrounded by the first color filter component, and the first color filter component surrounded by the first color filter component and formed by the cell filament. A color filter including a third color filter component; Furthermore, it has either an inorganic film, a light-shielding film, or an air gap at the boundary between adjacent different color filter components.

In the solid-state imaging device , the filter components of the first color, the second color, and the third color of the color filter are formed by self-alignment, so that the processing accuracy of the color filter is improved. Since there is no misalignment of the filter components between the colors, color mixing is suppressed. The first color filter component is formed so as to surround the second color and third color filter components. For this reason, since the first color filter components are all formed integrally and continuously, the adhesive strength is increased with respect to the base, and the color filter is difficult to peel off. Since any one of an inorganic film, a light shielding film, and an air gap is provided at the boundary between adjacent different color filter components, color mixing is suppressed.

The electronic apparatus includes a solid-state imaging device, an optical system that guides incident light to a photoelectric conversion element of the solid-state imaging device, and a signal processing circuit that processes an output signal of the solid-state imaging device. The solid-state imaging device includes an imaging region in which a plurality of pixels having photoelectric conversion elements are arranged, a first color filter component, a second color filter component surrounded by the first color filter component and formed by cell alignment, And a third color filter component surrounded by the first color filter component and formed by self-alignment. Furthermore, it has either an inorganic film, a light-shielding film, or an air gap at the boundary between adjacent different color filter components.

In the electronic device , since the solid-state imaging device includes a high-precision color filter, color mixing is suppressed.

According to the manufacturing method of the solid-state imaging device according to the present invention improves the machining accuracy of the color filter, Ru can be produced a solid-state imaging device in which color mixing is suppressed.

It is a block diagram which shows 1st Embodiment of the color filter of the solid-state imaging device which concerns on this invention. FIGS. 3A to 3F are manufacturing process diagrams (part 1) illustrating a method of forming a color filter according to the first embodiment. FIGS. FIGS. 9A to 9E are manufacturing process diagrams (part 2) illustrating a method of forming a color filter according to the first embodiment. FIGS. FIGS. 9A to 9E are manufacturing process diagrams (part 3) illustrating a method of forming a color filter according to the first embodiment. FIGS. It is a top view of the filter component pattern formed in FIG. 2F. It is a top view of the filter component pattern formed in FIG. 3E. It is a top view of the filter component pattern formed in FIG. 4E. It is a block diagram which shows 2nd Embodiment of the color filter of the solid-state imaging device which concerns on this invention. It is a block diagram which shows 3rd Embodiment of the color filter of the solid-state imaging device which concerns on this invention. A to E are manufacturing process diagrams (part 1) illustrating a method of forming a color filter according to a third embodiment. A to E are manufacturing process diagrams (part 2) illustrating a method of forming a color filter according to the third embodiment. FIGS. 9A to 9C are manufacturing process diagrams (part 3) illustrating a method of forming a color filter according to the third embodiment. FIGS. FIG. 10D is a plan view of the filter component pattern formed in FIG. 10D. It is a top view of the filter component pattern formed in FIG. 11C. It is a top view of the filter component pattern formed in FIG. 12C. It is a block diagram which shows 4th Embodiment of the color filter of the solid-state imaging device which concerns on this invention. FIGS. 9A to 9D are manufacturing process diagrams (part 1) illustrating a method of forming a color filter according to a fourth embodiment. FIGS. A to F are manufacturing process diagrams (part 2) illustrating a method of forming a color filter according to a fourth embodiment. It is a block diagram which shows 5th Embodiment of the color filter of the solid-state imaging device which concerns on this invention. AE is a manufacturing process diagram (part 1) illustrating a method for forming a color filter according to a fifth embodiment; FIGS. 9A to 9D are manufacturing process diagrams (part 2) illustrating a method of forming a color filter according to a fifth embodiment. FIGS. FIGS. 9A to 9D are manufacturing process diagrams (part 3) illustrating a method of forming a color filter according to a fifth embodiment. FIGS. It is a block diagram which shows 6th Embodiment of the color filter of the solid-state imaging device which concerns on this invention. AE is a manufacturing process diagram (part 1) illustrating a method for forming a color filter according to a sixth embodiment; A to D are manufacturing process diagrams (part 2) illustrating a method of forming a color filter according to a sixth embodiment. A to F are manufacturing process diagrams (part 3) illustrating a method of forming a color filter according to a sixth embodiment. It is a block diagram which shows 7th Embodiment of the color filter of the solid-state imaging device which concerns on this invention. A to E are manufacturing process diagrams (part 1) illustrating a method of forming a color filter according to a seventh embodiment. FIGS. 8A to 8C are manufacturing process diagrams (part 2) illustrating a method of forming a color filter according to a seventh embodiment. FIGS. FIGS. 9A to 9C are manufacturing process diagrams (part 3) illustrating a method of forming a color filter according to a seventh embodiment. FIGS. It is a block diagram which shows 8th Embodiment of the color filter of the solid-state imaging device which concerns on this invention. FIGS. 9A to 9G are manufacturing process diagrams illustrating a method for forming a color filter according to an eighth embodiment. FIGS. It is a block diagram which shows 9th Embodiment of the color filter of the solid-state imaging device which concerns on this invention. FIGS. 9A to 9G are manufacturing process diagrams illustrating a method for forming a color filter according to a ninth embodiment. FIGS. A to G are manufacturing process diagrams illustrating a method for forming a color filter according to a tenth embodiment of the present invention. A to G are manufacturing process diagrams illustrating a method of forming a color filter according to an eleventh embodiment of the present invention. It is a block diagram of the solid-state imaging device which concerns on 12th Embodiment of this invention. It is explanatory drawing of the problem of this invention. It is a block diagram of the color filter which concerns on 14th Embodiment of this invention. It is a schematic block diagram at the time of applying the electronic device which concerns on 15th Embodiment of this invention to a camera. It is a spectral characteristic figure in which the light resistance of the green filter was improved when an inorganic film was formed on the color filter of the present invention. It is a spectral characteristic figure in which the light resistance of the red filter was improved when an inorganic film was formed on the color filter of the present invention. It is a spectral characteristic figure in which the light resistance of the blue filter was improved when an inorganic film was formed on the color filter of the present invention.

  Embodiments of the present invention will be described below with reference to the drawings.

The manufacturing method of the solid-state imaging device according to the embodiment of the present invention is characterized by the configuration of the color filter and the manufacturing method thereof. The configuration and manufacturing method of the color filter according to the present embodiment can be applied to both a CMOS solid-state imaging device and a CCD solid-state imaging device, but are not limited thereto.

  A schematic configuration of a CMOS solid-state imaging device applied to the present embodiment will be described. Although not shown, the CMOS solid-state imaging device includes an imaging region in which pixels including a plurality of photoelectric conversion elements are regularly arranged in a two-dimensional manner on a semiconductor substrate such as a silicon substrate, and a peripheral circuit unit. The The pixel includes, for example, a photodiode serving as a photoelectric conversion element and a plurality of pixel transistors (so-called MOS transistors). The plurality of pixel transistors can be configured by four transistors, for example, a transfer transistor, a reset transistor, an amplification transistor, and a selection transistor. In addition, for example, the selection transistor can be omitted and can be configured by three transistors. The peripheral circuit section includes a vertical drive circuit, a column signal processing circuit, a horizontal drive circuit, an output circuit, a control circuit, and the like.

  The control circuit generates a clock signal and a control signal that serve as a reference for operations of the vertical drive circuit, the column signal processing circuit, the horizontal drive circuit, and the like based on the vertical synchronization signal, the horizontal synchronization signal, and the master clock. These signals are input to a vertical drive circuit, a column signal processing circuit, a horizontal drive circuit, and the like.

  The vertical drive circuit is configured by a shift register, for example. The vertical drive circuit sequentially selects and scans each pixel in the imaging area in the vertical direction in units of rows, and the pixel signal based on the signal charge generated according to the amount of light received by the photoelectric conversion element (photodiode) of each pixel through the vertical signal line. Is supplied to the column signal processing circuit.

  The column signal processing circuit is arranged, for example, for each column of pixels, and a signal output from the pixels for one row is generated by a signal from a black reference pixel (formed around the effective pixel region) for each pixel column. Performs signal processing such as noise removal and signal amplification. At the output stage of the column signal processing circuit, a horizontal selection switch is provided connected to the horizontal signal line.

The horizontal drive circuit is configured by, for example, a shift register, and sequentially outputs horizontal scanning pulses to sequentially select each of the column signal processing circuits and output a pixel signal from each of the column signal processing circuits to the horizontal signal line. .
The output circuit performs signal processing and outputs signals sequentially supplied from each of the column signal processing circuits through the horizontal signal line.

  A multilayer wiring layer is formed above the substrate on which the pixels are formed via an interlayer insulating film, an on-chip color filter is formed thereon via a planarizing film, and an on-chip microlens is further formed thereon. . A light-shielding film is formed in a region other than the pixel portion in the imaging region, more specifically, in the peripheral circuit portion and other region other than the photodiode (so-called light receiving portion) in the imaging region. This light shielding film can be formed by, for example, the uppermost wiring layer of the multilayer wiring layer.

  Next, a schematic configuration of the CCD solid-state imaging device applied to this embodiment will be described. Although not shown, the CCD solid-state imaging device includes a plurality of photoelectric conversion elements formed on a semiconductor substrate, for example, a silicon substrate, a vertical transfer register having a CCD structure corresponding to each photoelectric conversion element array, a horizontal transfer register, an output unit, And a peripheral circuit part constituting the signal processing circuit. The photoelectric conversion elements are formed of, for example, photodiodes, and are regularly arranged two-dimensionally. The vertical transfer register is configured by forming a transfer electrode on a transfer channel region formed by a diffusion layer via a gate insulating film. A unit pixel is formed by each photodiode and a vertical transfer register corresponding to the photodiode. An imaging region is configured by the photodiode and the vertical transfer register. The horizontal transfer register is arranged at the end of the vertical transfer register, and is similarly configured by forming a transfer electrode on a transfer channel region formed by a diffusion layer via a gate insulating film. The output unit is connected to the last stage of the horizontal transfer register. A light shielding film is formed in a region other than the pixel portion in the imaging region, more specifically, in the peripheral circuit portion, the region portion excluding the photodiode in the imaging region, the horizontal transfer register, and the output portion. The light shielding film is formed so as to cover the transfer electrode. Further above, an on-chip color filter and an on-chip microlens thereon are formed via a planarization film.

  In the CCD solid-state imaging device, signal charges generated by photoelectric conversion by a photodiode are read out to a vertical transfer register, transferred in the vertical direction, and signal charges for each line are transferred to a horizontal transfer register. In the horizontal transfer register, signal charges are transferred in the horizontal direction, converted into pixel signals via an output unit, and output. The output pixel signal is taken out as an image signal through a signal processing circuit in the peripheral circuit section. The CCD solid-state imaging device in the above example is an interline transfer (IT) type solid-state imaging device. The CCD solid-state image pickup device in the above example is also applicable to a frame interline transfer (FIT) type solid-state image pickup device having a storage area formed only by a vertical transfer register between the image pickup area and the horizontal transfer register. Is done.

  The solid-state imaging device and the manufacturing method thereof according to the present embodiment, in particular, the color filter and the formation method thereof are applied to both the above-described CMOS solid-state imaging device and CCD solid-state imaging device. The color filters described in the following embodiments are configured to include filter components of the first color, the second color, and the third color. In each of the following embodiments, the first color filter component, the second color filter component, and the third color filter component are respectively a green filter component, a red filter component, and a blue filter component. It can be a filter component.

<First embodiment>
[Configuration example of solid-state imaging device, especially its color filter]
FIG. 1 shows a solid-state imaging device according to the present invention, particularly a first embodiment of the color filter. The solid-state imaging device according to the first embodiment is formed by forming the color filter 1 shown in FIG. 1 through the planarization film after the imaging region is formed as described above. The color filter 1 includes a red filter component 2R, a green filter component 2G, and a blue filter component 2B arranged in a so-called Bayer array. That is, the color filter 1 has a pattern in which the green filter component 2G is arranged in a checkered pattern, and the red filter component 2R and the blue filter component 2B are arranged in line sequence.

  In this color filter 1, each red filter component 2R and blue filter component 2B are formed in a pattern that is surrounded by a green filter component 2G. That is, the green filter component 2G, the red filter component 2R, and the blue filter component 2B are each formed in a regular square shape. Among them, regarding the green filter 2G, adjacent four corner portions 3 are in contact with each other and are formed integrally as a whole. Therefore, the red filter component 2R and the blue filter component 2B have a smaller area than the green filter component 2G in terms of unit filter components, and are formed independently by being surrounded by the green filter component 2G.

  Further, as will be apparent from the manufacturing method described later, the red filter component 2R and the blue filter component 2B are formed by self-alignment with respect to the green filter component 2G using a hard mask. As a material for forming each filter component 2R, 2G, 2B, a material that does not contain a photosensitive component in the material solid content is used. The filter component material can be composed of a photocurable material comprising a pigment dispersion, a binder resin, a monomer, a photopolymerization initiator, and a solvent. Alternatively, the filter component material can be composed of a thermosetting material composed of a pigment dispersion, a binder resin, a thermosetting agent, and a solvent.

  As the binder resin, for example, an acrylic resin, a novolac resin, a styrene resin, or a copolymer resin thereof can be used. As the thermosetting agent, for example, a melamine curing agent, a urea curing agent, an epoxy curing agent, or the like can be used. As the solvent, for example, ethyl lactate and dimethylformamide can be used.

  According to the solid-state imaging device according to the first embodiment, the red filter component 2R and the blue filter component 2B are formed by self-alignment with respect to the green filter component 2G using a hard mask. For this reason, the red filter component 2R, the green filter component 2G, and the blue filter component 2B do not overlap each other and are therefore formed with high accuracy without overlapping each other. In addition, since the green filter component 2G is continuously formed integrally with the four corners in contact with each other, it does not peel off. In addition, since each filter component 2R, 2G, 2B is formed by coating with the above-mentioned photo-curing material or thermosetting material, there is no deterioration in peel strength due to insufficient exposure when using a conventional general lithography technique, There is no peeling. Thus, the processing accuracy of the color filter of the present embodiment is improved.

  Since there is no overlap between the color filter components 2R, 2G, and 2B, the occurrence of color mixing is suppressed. Further, as the filter component material, a material containing a photosensitive component or a material not containing a photosensitive component is used. When a material that does not contain a photosensitive component is used, the filter film thickness can be reduced, and the sensitivity characteristics can be improved accordingly.

[Example of manufacturing method of solid-state imaging device, especially example of forming color filter]
Next, an embodiment of a method for manufacturing the solid-state imaging device according to the first embodiment, particularly a method for forming the color filter 1 will be described with reference to FIGS. 2 to 4 correspond to cross sections on the aa ′ line (green-red column) and bb ′ line (green-blue column) in FIG. 1.

First, as shown in FIG. 2, a first color filter component is formed. In this example, the green filter component 2G is formed.
That is, as shown in FIG. 2A, a hard mask 6 having a required thickness, that is, a thickness t corresponding to the thickness of the filter component of each color, is formed on the entire surface of the substrate 5. The figure shows the imaging area. The substrate 5 has a flattened film formed on the outermost surface in order to form a color filter thereon. That is, the surface of the substrate 5 corresponds to the surface of the imaging region where a plurality of pixels having photoelectric conversion elements before the color filter is formed. As the hard mask 6, for example, a polysilicon film, an amorphous silicon film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is used.

  Next, as shown in FIG. 2B (corresponding to a cross section on the line aa ′ in FIG. 1), a resist mask 7 having an opening 8 in a portion corresponding to the green filter component to be formed is formed on the hard mask 6. Form. The resist mask 7 is a dry etching mask for the hard mask 6. The resist mask 7 is formed using a so-called photolithography method in which a photoresist film is formed, exposed through an optical mask having a required pattern, and developed.

  Next, as shown in FIG. 2C, the hard mask 6 facing the opening 8 of the resist mask 7 is selectively removed by anisotropic dry etching such as reactive ion etching (RIE). By this selective etching, an opening 9 is formed in the hard mask 6 in a region where the first color filter component, in this example, the green filter component is to be formed.

  Next, as shown in FIG. 2D, the resist mask 7 that has become unnecessary is removed by ashing, wet cleaning, or the like.

  Next, as shown in FIG. 2E, a green filter component material 11G is applied to the entire surface of the hard mask 6. The application is performed by, for example, spin coating. The green filter component material 11G is a material that does not contain a photosensitive component in the solid content of the material, and the thermosetting material described above is used in this example. After applying the green filter component material 11G, heat treatment is performed for about 1 minute to 10 minutes on a hot plate at about 150 ° C. to 220 ° C. to thermally cure the green filter component material 11G.

  Next, as shown in FIG. 2F, the entire surface of the green filter material 11G is etched back or subjected to chemical mechanical polishing (CMP) until the surface of the hard mask 6 is exposed to the green filter component material 11G. Remove. In this way, the green filter component 2G is formed. FIG. 5 is a plan view showing a pattern of the green filter component 2G formed in FIG. 2F. As can be seen from FIG. 5, the green filter components 2G are arranged in a checkered pattern with the unit components forming a square shape as a whole, but are continuously integrated so that the four corners 12 of the adjacent green filter components 2G are in contact with each other. It is formed. The remaining hard mask 6 is surrounded by the green filter component 2G. This is because the hard mask 6 is etched by each color alone when forming red and blue color filter components, which are second and third color filter components, which will be described later.

  Next, a second color filter component is formed as shown in FIG. In FIG. 3, the red filter component is the second color, but the blue filter component may be the second color.

  That is, as shown in FIG. 3A, from the state of FIGS. 2F and 5, an opening is formed on the hard mask 6 corresponding to the region of the red filter component to be formed on the surface having the green filter component 2G and the hard mask 6. A resist mask 14 having 13 is formed. The hard mask 6 corresponding to the region of the green filter component 2G and the blue filter component to be formed is covered with a resist mask. The resist mask 14 is formed using a photolithography method as described above. Here, the resist mask 14 is formed in a pattern such that the edge of the opening 13 is on the inner side of the hard mask 6. That is, the width w1 of the opening 13 is smaller than the width w2 of the hard mask 6 (w1 <w2). The reason why the opening 13 is formed inside the hard mask 6 is to protect the green filter component 2G from the subsequent dry etching.

Next, as shown in FIG. 3B, the hard mask 6 exposed in the opening 13 is removed by isotropic dry etching through the resist mask 14. As an etching apparatus used at this time, a CDE (Chemical Dry Etch) apparatus is used. By using this etching apparatus, the etching gas easily flows into the lower side of the resist mask 14 formed inside the hard mask 6 and the hard mask 6 can be entirely removed by etching. As an etching gas, CF ₄ + O ₂ gas, CF ₄ + O ₂ + N ₂ or the like can be used. An opening 15 is formed by removing the hard mask 6.

  Next, as shown in FIG. 3C, the resist mask 14 that is no longer needed is removed using an organic solvent. In the removal process of the resist mask 14, it is necessary to consider damage to the green filter component 2G. In dry etching of the hard mask 6, a hardened layer (modified layer) is easily formed on the surface of the resist mask 14. Therefore, in this case, if removal with an organic solvent is difficult due to the influence of the cured layer, the resist mask 14 is removed using an organic solvent after removing the cured layer with a fluorocarbon-based gas and a gas containing oxygen. It may be removed.

  Examples of the organic solvent include N-methyl-2-pyrrolidone, γ-butyrolactone, cyclopentanone, cyclohexanone, isophorone, N, N-dimethylacetamide, dimethylimidazolinone, tetramethylurea, dimethyl sulfoxide, diethylene glycol dimethyl ether, diethylene glycol diethyl Ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3-butylene Glycol-3-monomethyl ether, methyl pyruvate, ethyl pyruvate, methyl 3-methoxy propionate alone solvent or, two or more mixed solvents such like.

  Next, as illustrated in FIG. 3D, a red filter component material 11 </ b> R is applied to the entire surface including the green filter component 2 </ b> G, the hard mask 6, and the opening 15. The application is performed by, for example, spin coating. The red filter component material 11R is a material that does not contain a photosensitive component in the material solid content, and the thermosetting material described above is used in this example. After applying the red filter component material 11R, heat treatment is performed on the hot plate at about 150 ° C. to 220 ° C. for about 1 minute to 10 minutes to thermally cure the red filter component material 11R.

  Next, as shown in FIG. 3E, the entire surface of the hard mask 6 and the green filter component 2G is exposed to the red filter component material 11R, or chemical mechanical polishing (CMP) is performed until the red surface is exposed. The upper surface of the filter component material 11R is removed. In this way, the red filter component 2R is formed. FIG. 6 is a plan view showing a pattern of the red filter component 2R formed in FIG. 3E and the green filter component 2G formed in advance. As can be seen from FIG. 6, the red filter component 2 </ b> R is formed so that the unit component has a quadrangular shape and is surrounded by the free filter component 2 </ b> G.

  The hard mask 6 remains in the region where the blue filter component is to be formed.

  Next, as shown in FIG. 4, a third color filter component is formed. Although the blue filter component 2B is the third color in FIG. 4, the red filter component 2R may be the third color.

  That is, as shown in FIG. 4A, from the state of FIGS. 3E and 6, a resist having an opening 16 on the remaining hard mask 6 on the surface having the green filter component 2G, the red filter component 2R, and the hard mask 6. A mask 17 is formed. The green filter component 2G and the red filter component 2R are covered with a resist mask 17. The resist mask 17 is formed using a photolithography method as described above. Then, the resist mask 17 is formed in a pattern in which the edge portion of the opening 16 is inside the hard mask 6. That is, as in FIG. 3A described above, the width w1 of the opening 16 is smaller than the width w2 of the hard mask 6 (w1 <w2). The reason why the opening 16 is formed inside the hard mask 6 is to protect the green filter component 2G and the red filter component 2R from the subsequent dry etching.

  Next, as shown in FIG. 4B, the hard mask 6 exposed in the opening 16 is removed by isotropic dry etching through the resist mask 17. As the etching apparatus used at this time, a CDE apparatus is used as described above. The hard mask 6 is all removed, and an opening 18 surrounded by the green filter component 2G is formed.

  Next, as shown in FIG. 4C, the resist mask 17 that is no longer needed is removed using an organic solvent. The organic solvent mentioned above can be used as the organic solvent. At this time, if it is difficult to remove the resist mask 17 with an organic solvent due to the influence of the hardened layer or the like, the resist mask 17 is removed using an organic solvent after removing the hardened layer with a fluorocarbon-based gas and a gas containing oxygen. May be removed.

  Next, as shown in FIG. 4D, a blue filter component material 11B is applied to the entire surface including the green filter component 2G, the red filter component 2R, and the opening 18. Application is performed by spin coating. The blue filter component material 11B is a material that does not contain a photosensitive component in the solid content of the material. In this example, the above-described thermosetting material is used. After applying the blue filter component material 11B, heat treatment is performed for about 1 minute to 10 minutes on a hot plate at about 150 ° C. to 220 ° C. to thermally cure the blue filter component material 11B.

  Next, as shown in FIG. 4E, the entire surface of the blue filter component material 11B is etched back until the surfaces of the green filter component 2G and the red filter component 2R are exposed, or chemical mechanical polishing (CMP) is performed. The upper surface of the blue filter component material 11B is removed. Thereby, the blue filter component 2B is formed.

  In this way, the primary color Bayer array color filter 1 having the green filter component 2G, the red filter component 2R, and the blue filter component 2B is obtained. FIG. 7 is a plan view showing patterns of the color filter components 2G, 2R, and 2B of green, red, and blue formed in FIG. 4E. As can be seen from FIG. 7, the red filter component 2R and the blue filter component 2B are formed by connecting unit components in a square shape and surrounded by a green filter component 2G, and all the green filter components 2G are connected.

  In the above example, the thermosetting material is used as each color filter component material 11G, 11R, 11B, but the above-described photocuring material can be used. In this case, the photo-curing material is spin-coated and then cured by irradiating with ultraviolet rays or the like. Further, heat treatment may be performed in addition to the light irradiation treatment.

  According to the method for manufacturing a solid-state imaging device according to the present embodiment, particularly the method for forming the color filter 1, the green filter component 2G, the red filter component 2R, and the blue filter component 2B are obtained by self-alignment using the hard mask 6 as a reference. Forming. Thereby, the dimensional accuracy and overlay accuracy of the color filter are improved, and color mixing in the solid-state imaging device can be suppressed.

  Moreover, since the pigment dispersion type photoresist used conventionally contains a pigment dye in the composition, the resolution characteristics are inferior compared with general photoresists used for processing for semiconductor applications and ion implantation applications. . On the other hand, according to the present embodiment, a high resolution resist can be used for patterning the hard mask, which is advantageous in terms of accuracy. Further, when aligning a resist containing a pigment dye with a stepper, the alignment light is absorbed by the dye, which is disadvantageous in alignment accuracy. However, this embodiment can solve this problem.

  That is, a conventional color filter material uses a resist containing a pigment dye, and is exposed to ultraviolet rays such as i-line by a stepper and developed to form a pattern. The alignment performance of the exposure apparatus is said to be better with a stepper using an excimer laser such as KrF or ArF. However, the excimer laser light has a significantly reduced exposure sensitivity due to the influence of the dye in the color filter material, that is, light absorption, and a good pattern cannot be formed. According to the present embodiment, the filter component material does not require photosensitivity, so that it is only necessary to form a pattern only with a hard mask, and an excimer laser stepper with higher alignment accuracy can be used. Thus, the color filter forming method according to the present embodiment can improve the processing accuracy.

  In the present embodiment, each color filter component material 11G, 11R, 11B uses a thermosetting material or a photocuring method material that does not contain a photosensitive component. For this reason, compared with the photosensitive material patterned using the conventional photolithography, the film thickness of each color filter component 2R, 2G, 2B can be thinned. As a result, it is possible to improve the sensitivity characteristics of the solid-state imaging device and suppress luminance shading.

Since the green filter component 2G is continuously integrated as a whole by connecting the four corners, the adhesion area with the base is large. Further, since each color filter component 2G, 2R, 2B is formed using a thermosetting material or a photo-curing material, it is difficult to peel off as compared with the case of using a conventional pigment-dispersed photoresist. Therefore, the color filter of the present embodiment can form a color filter having a strong deposition strength with respect to the base.
Since the hard mask 6 is patterned and irregularities are formed (see FIG. 2), the adhesion of each of the green, red, and blue filter materials is increased. Moreover, each filter material does not need to be patterned by exposure, and is cured only by sufficient exposure or heat treatment. Therefore, the adhesion of each color filter component 2G, 2R, 2B is improved.

<Second Embodiment>
[Example of color filter configuration]
FIG. 8 shows a second embodiment of a color filter applied to the solid-state imaging device of the present invention. The color filter 21 according to the present embodiment is configured by so-called diagonally arranging the color filter components 2R, 2G, and 2B. The color filter 21 of the present embodiment is formed by arranging the rows of the green filter components 2G in every other row so as to be inclined at 45 degrees with respect to the horizontal and vertical directions. In addition, the green filter components 2G are arranged in every other row so as to be orthogonal to this row, that is, obliquely inclined at −45 degrees with respect to the horizontal and vertical directions. Further, the red filter component 2R and the blue filter component 2B are alternately formed in every other row along the vertical direction so as to be arranged in a spatial region surrounded by the intersecting green filter components 2G.

[Example of color filter formation method]
The color filter 21 of the second embodiment can be formed by using the color filter forming method according to the first embodiment described above. This color filter 21 and the method for forming the same also have the same effects as those of the first embodiment described above.

<Third Embodiment>
[Configuration example of solid-state imaging device, especially its color filter]
FIG. 9 shows a solid-state imaging device according to the present invention, particularly a third embodiment of the color filter. In the solid-state imaging device according to the third embodiment, after the imaging region is formed as described above, the color filter 23 shown in FIG. 9 is formed through the planarization film. As described in the first embodiment, the color filter 23 is configured by arranging a red filter component 2R, a green filter component 2G, and a blue filter component 2B in a so-called Bayer arrangement.

  As in the first embodiment, the color filter 23 is formed in a pattern in which each red filter component 2R and blue filter component 2B are surrounded by a green filter component 2G. The green filter component 2G, the red filter component 2R, and the blue filter component 2B are each formed in a regular square shape. As for the green filter 2G, the adjacent four corners 3 are in contact with each other and formed as a continuous unit as a whole. Therefore, the red filter component 2R and the blue filter component 2B are each formed independently by being surrounded by the green filter component 2G.

In the present embodiment, an inorganic film that is substantially transparent in the visible light region so as to be continuous with the surface and side surfaces of the green filter component 2G and the bottom surfaces of the independent red filter component 2R and blue filter component 2B. 24 is formed. Examples of the inorganic film 24 include a silicon oxide (SiO ₂ ) film, a silicon nitride (SiN) film, a silicon oxycarbide (SiOC) film, and a silicon oxynitride (SiON) film formed by a low temperature plasma CVD (Chemical Vapor Deposition) film formation method. ) A film or the like is used. The film formation temperature is preferably about 150 ° C. to 250 ° C., and the film thickness is suitably about 200 nm or less.

  Further, as will be apparent from the manufacturing method described later, the red filter component 2R and the blue filter component 2B are formed by self-alignment with respect to the green filter component 2G using a hard mask. As the material for forming the green filter component 2G, a material containing or not containing a photosensitive component in the same material solid content as described above is used. On the other hand, a photosensitive filter material is used as a material for forming the red filter component 2R and the blue filter component 2B.

  According to the solid-state imaging device according to the third embodiment, the red filter component 2R and the blue filter component 2B are formed by self-alignment with respect to the green filter component 2G using a hard mask. Further, the red filter component 2R and the blue filter component 2B can be smoothed with high accuracy so as to be almost equal to the film thickness of the green filter component 2G. For this reason, the red filter component 2R, the green filter component 2G, and the blue filter component 2B do not overlap each other and are therefore formed with high accuracy without overlapping each other. In addition, since the green filter component 2G is continuously formed integrally with the four corners in contact with each other, it does not peel off. Thus, the processing accuracy of the color filter of the present embodiment is improved.

  Since the inorganic film 24 is formed at the boundary between the filter components 2R and 2G and at the boundary between the filter components 2B and 2G, mutual diffusion of the respective dyes is prevented, and between the filter components 2R, 2G, and 2B. Since there is no overlap, the occurrence of color mixing is suppressed. Furthermore, when a material that does not contain a photosensitive component is used as the green filter component material, the thickness of the color filter can be reduced, and the sensitivity characteristics can be improved.

  An inorganic film 24 is formed on the green filter component 2G. When the green filter component is formed of a filter material containing a dye-based pigment having excellent spectral characteristics, the light resistance of the green filter is improved because the inorganic film 24 is formed on the upper surface. The red filter component 2R and the blue filter component 2B can be formed of a filter material containing a pigment-based dye having excellent light resistance as compared with a filter material containing a dye.

[Example of manufacturing method of solid-state imaging device, especially example of forming color filter]
Next, an embodiment of a method for manufacturing a solid-state imaging device according to the third embodiment, particularly a method for forming the color filter 23 will be described with reference to FIGS. 10 to 12 correspond to the cross sections on the aa ′ line (green-red row) and the bb ′ line (green-blue row) in FIG. 9.

First, as shown in FIG. 10, the first color filter component is formed. In this example, the green filter component 2G is formed. The process of forming the first color filter component is the same as described in the first embodiment.
That is, as shown in FIG. 10A, a hard mask 6 having a thickness t corresponding to the thickness of the color filter is formed on the entire surface of the substrate 5. The substrate 5 has a flattened film formed on the outermost surface in order to form a color filter thereon. As the hard mask 6, for example, an inorganic film such as a polysilicon film, an amorphous silicon film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is used.

  Next, as shown in FIG. 10B, a resist mask 7 having an opening 8 at a portion corresponding to the green filter component to be formed is formed on the hard mask 6. The resist mask 7 is formed using a photolithography method.

  Next, as shown in FIG. 10C, the hard mask 6 facing the opening 8 of the resist mask 7 is selectively removed by anisotropic dry etching such as reactive ion etching (RIE). By this selective etching, an opening 9 is formed in the hard mask 6 in the region where the green filter component is to be formed.

  Next, after the unnecessary resist mask 7 is removed by ashing and wet cleaning, a green filter component material 11G is applied to the entire surface of the hard mask 6 as shown in FIG. 10D. Application is performed by spin coating. When the green filter component material 11G uses a material that does not contain a photosensitive component in the material solid content, the thermosetting material described above is used in this example. After applying the green filter component material 11G, heat treatment is performed for about 1 minute to 10 minutes on a hot plate at about 150 ° C. to 220 ° C. to thermally cure the green filter component material 11G. When the filter component contains a photosensitive component, it is photocured by ultraviolet irradiation.

  Next, as shown in FIG. 10E, the entire surface of the green filter material 11G is etched back or subjected to chemical mechanical polishing (CMP) until the surface of the hard mask 6 is exposed to the green filter component material 11G. Remove. In this way, the green filter component 2G is formed. FIG. 13 is a plan view showing a pattern of the green filter component 2G formed in FIG. 10E. In the green filter component 2G, the unit components form a square shape and are arranged in a checkered pattern as a whole. However, the green filter component 2G is continuously and integrally formed so that the four corner portions 12 of the adjacent green filter components 2G are in contact with each other. The remaining hard mask 6 is surrounded by the green filter component 2G.

  Next, as shown in FIG. 11, a second color filter component is formed. In FIG. 11, the red filter component is the second color, but the blue filter component may be the second color.

  That is, as shown in FIG. 11A, a resist mask 14 having an opening 13 in a portion corresponding to the hard mask 6 is formed on the entire surface having the green filter component 2G and the hard mask 6 from the states of FIGS. 10E and 13. To do. Then, the hard mask 6 is removed by isotropic dry etching through the resist mask 14. The width w1 of the opening 13 is smaller than the width w2 of the hard mask 6 (w1 <w2). The reason why the opening 13 is formed inside the hard mask 6 is to protect the green filter component 2G from dry etching.

  Next, as shown in FIG. 11B, the resist mask 14 that is no longer needed is removed using an organic solvent. As the organic solvent, the solvent described in the first embodiment is used. The steps from FIG. 11A to FIG. 11B are the same as described in the first embodiment.

Next, as shown in FIG. 11C, an inorganic film 24 is formed on the entire surface including the top and side surfaces of the green filter component 2G and the bottom surface of the opening 15 from which the hard mask 6 has been removed. The inorganic film 24 is a thin film having a thickness of 200 nm or less, which is thinner than the film thickness of the filter component, and the film forming temperature is preferably about 150 ° C. to 250 ° C. As the inorganic film 24, for example, a silicon oxide (SiO ₂ ) film, a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, or the like formed by a low temperature plasma film forming method is used. FIG. 14 is a plan view showing the pattern of the inorganic film 24 and the green filter component 2G formed in FIG. 11C.

  Next, as illustrated in FIG. 11D, a red filter component material 11 </ b> R is applied to the entire surface including the green filter component 2 </ b> G on which the inorganic film 24 is formed and the opening 15 so as to be embedded in the opening 15. The application is performed by, for example, spin coating. The red filter component material 11R is a photosensitive filter material. As the photosensitive filter material, either a negative type or a positive type can be used. In this example, a negative type material that cures a portion irradiated with light is used.

  Next, as shown in FIG. 11E, the red filter component material 11R is exposed and developed through an optical mask that transmits light only to the region where the red filter component is to be formed, and the red filter component 2R is formed. Form. At this time, an area slightly wider than the area of the opening 15 is exposed in consideration of misalignment of the optical mask. Therefore, the red filter component 2R is formed so as to partially overlap the green filter component 2G via the inorganic film 24.

  Next, as shown in FIG. 12, a blue filter component that is a filter component of the third color is formed. In FIG. 12, the blue filter component is the third color, but the red filter component may be the third color.

  That is, as shown in FIG. 12A, the blue filter component is formed on the entire surface including the green filter component 2G, the red filter component 2R, and the remaining opening 15 on which the inorganic film 24 is formed so as to be embedded in the remaining opening 15. Material 11B is applied. The application is performed by, for example, spin coating. The blue filter component material 11B is a photosensitive filter material. As the photosensitive filter material, either a negative type or a positive type can be used. In this example, a negative type material that cures a portion irradiated with light is used.

  Next, as shown in FIG. 12B, the blue filter component material 11B is exposed and developed through an optical mask that transmits light only to the region where the blue filter component is to be formed, and the blue filter component 2B is formed. Form. At this time, an area slightly wider than the area of the opening 15 is exposed in consideration of misalignment of the optical mask. Accordingly, the blue filter component 2B is partially overlapped with the green filter component 2G via the inorganic film 24.

  Next, as shown in FIG. 12C, the red filter component material 2R and the blue filter component material 2B are smoothed using an etch back or chemical mechanical polishing (CMP) method until the surface of the inorganic film 24 is exposed. To do.

  In this manner, the primary color Bayer array color filter 23 having the inorganic film 24 and having the green filter component 2G, the red filter component 2R, and the blue filter component 2B is obtained. FIG. 15 is a plan view showing patterns of the color filter components 2G, 2R, and 2B of green, red, and blue formed in FIG. 12C. As can be seen from FIG. 15, the red filter component 2R and the blue filter component 2B are formed by connecting the green filter component 2G with the unit component having a square shape and surrounded by the green filter component 2G.

  According to the method for manufacturing the solid-state imaging device according to the present embodiment, particularly the method for forming the color filter 23, the green filter component 2G, the red filter component 2R, and the blue filter component 2B are obtained by self-alignment using the hard mask 6 as a reference. Forming. In addition, the inorganic film 24 is formed on the entire surface before the red filter component 2R and the blue filter component 2B are formed, and after the red and blue filter components 2R and 2B are formed, both the filter components 2R and 2B are stoppered by the inorganic film 24. It is flattened as a film. Thereby, the dimensional accuracy and overlay accuracy of the color filter are improved, and color mixing in the solid-state imaging device can be suppressed.

Since the green filter component 2G is continuously integrated as a whole by connecting the four corners, the adhesion area with the base is large. Further, since the green filter component 2G is formed using a thermosetting material or a photo-curing material, it is difficult to peel off compared to the case where a conventional pigment-dispersed photoresist is used. Therefore, the color filter of the present embodiment can form a color filter having a strong deposition strength with respect to the base.
Since the hard mask 6 is patterned and irregularities are formed (see FIG. 10), the adhesion of the green filter component 2G is improved as in the first embodiment. The red filter component 2R and the blue filter component 2B are embedded in the opening 15 after the free filter component 2G is formed. For this reason, the red filter component 2R and the blue filter component 2B have close contact surfaces on the bottom surface and side surfaces, and the adhesion area is increased, so that the adhesion is improved.

  The inorganic film 24 having the stopper function of the above-described third embodiment is applied to the color filter 23 having the Bayer arrangement, but has the pattern of the color filter component shown in the above-described second embodiment, although not shown. It can also be applied to color filters.

<Fourth embodiment>
[Configuration example of solid-state imaging device, especially color filter]
FIG. 16 shows a solid-state imaging device according to the present invention, particularly a fourth embodiment of the color filter. In the solid-state imaging device according to the fourth embodiment, after the imaging region is formed as described above, the color filter 26 shown in FIG. 16 is formed through the planarization film. As described in the first embodiment, the color filter 26 is configured by arranging a red filter component 2R, a green filter component 2G, and a blue filter component 2B in a so-called Bayer arrangement.

  As in the first embodiment, the color filter 26 is formed in a pattern in which each red filter component 2R and blue filter component 2B are surrounded by a green filter component 2G. The green filter component 2G, the red filter component 2R, and the blue filter component 2B are each formed in a regular square shape. As for the green filter 2G, the adjacent four corners 3 are in contact with each other and formed as a continuous unit as a whole. Therefore, the red filter component 2R and the blue filter component 2B are each formed independently by being surrounded by the green filter component 2G.

In the present embodiment, the substantially transparent inorganic layer 24 is formed in the visible light region so as to be continuous with the surface and side surfaces of the red filter component 2R and the blue filter component 2B and the bottom surface of the green filter component. As the inorganic film 24, as described in the third embodiment, for example, a silicon oxide (SiO ₂ ) film, a silicon nitride (SiN) film, a silicon oxycarbonized (SiOC) film formed by a low temperature plasma CVD film forming method, A silicon oxynitride (SiON) film or the like is used. The film formation temperature is preferably about 150 ° C. to 250 ° C., and the film thickness is suitably about 200 nm or less.

  Further, as will be apparent from the manufacturing method described later, the green filter component is formed by self-alignment with respect to the red filter component 2R and the blue filter component 2B using a hard mask. As the material for forming the green filter component 2G, a material containing a photosensitive component or a material containing no photosensitive component in the same material solid content as described above is used. On the other hand, a photosensitive filter material is used as a material for forming the red filter component 2R and the blue filter component 2B.

  According to the solid-state imaging device according to the fourth embodiment, the green filter component 2G is formed by self-alignment with respect to the red filter component 2R and the blue filter component 2B using a hard mask. In addition, the green filter component 2G can be smoothed with high accuracy so as to substantially match the film thickness of the red filter component 2R and the blue filter component 2B. For this reason, the red filter component 2R, the green filter component 2G, and the blue filter component 2B do not overlap each other and are therefore formed with high accuracy without overlapping each other. In addition, since the green filter component 2G is continuously formed integrally with the four corners in contact with each other, it does not peel off. Thus, the processing accuracy of the color filter of the present embodiment is improved.

  Since the inorganic film 24 is formed at the boundary between the color filter components 2R and 2G and at the boundary between the color filter components 2B and 2G, mutual diffusion of the respective dyes is prevented, and between the color filter components 2R, 2G, and 2B. Since there is no overlap, the occurrence of color mixing is suppressed. Furthermore, since a material that does not contain a photosensitive component is used as the green filter component material, the thickness of the color filter can be reduced, and the sensitivity characteristics can be improved.

[Manufacturing Method of Solid-State Imaging Device, Especially Color Filter Forming Method]
Next, an embodiment of a method for manufacturing a solid-state imaging device according to the fourth embodiment, particularly a method for forming the color filter 26 will be described with reference to FIGS. The cross sections in FIGS. 17 to 18 correspond to the cross sections on the line aa ′ (green-red row) and the line bb ′ (green-blue row) in FIG.

  First, as shown in FIG. 17A, a hard mask 6 having a thickness t corresponding to the thickness of the color filter is formed on the entire surface of the substrate 5. The substrate 5 has a flattened film formed on the outermost surface in order to form a color filter thereon. As the hard mask 6, for example, an inorganic film such as a polysilicon film, an amorphous silicon film, a silicon oxide film, a silicon nitride film, or a silicon oxynitride film is used.

  Next, as shown in FIG. 17B, a resist mask 7 having an opening 8 at a portion corresponding to the green filter component to be formed is formed on the hard mask 6. The resist mask 7 is formed using a photolithography method.

  Next, as shown in FIG. 17C, the hard mask 6 facing the opening 8 of the resist mask 7 is selectively removed by anisotropic dry etching such as reactive ion etching (RIE). By this selective etching, an opening 9 is formed in the hard mask 6 in the region where the green filter component is to be formed.

  Next, as shown in FIG. 17D, the resist mask 7 that is no longer needed is removed by ashing, wet cleaning, or the like to obtain a hard mask 6 having an opening 9 in a portion where a green filter component is to be formed.

  Next, as illustrated in FIG. 18A, for example, a blue filter component material 11 </ b> B serving as the third color is applied to the entire surface of the hard mask 6 so as to be embedded in the opening 9. Application is performed by spin coating. This blue filter component material 11B is a photosensitive filter material. As the photosensitive filter material, either a negative type or a positive type can be used. In this example, a negative type material that cures a portion irradiated with light is used.

  Then, the blue filter component material 11B is exposed and developed through an optical mask that transmits light only to the region where the blue filter component is to be formed, and the blue filter component 2B is formed. At this time, an area slightly larger than the area of the opening 9 is exposed in consideration of misalignment of the optical mask. Accordingly, the blue filter component 2 </ b> B is partially formed on the hard mask 6.

  Next, as shown in FIG. 18B, for example, a red filter component material 11 </ b> R serving as the second color is applied to the entire surface including the hard mask 6 and the blue filter component 2 </ b> B so as to be embedded in the remaining openings 9. Application is performed by spin coating. This red filter component material 11R is a photosensitive filter material. As the photosensitive filter material, either a negative type or a positive type can be used. In this example, a negative type material that cures a portion irradiated with light is used.

  Then, the red filter component material 11R is exposed and developed through an optical mask that transmits light only to the region where the red filter component is to be formed, thereby forming the red filter component 2R. At this time, an area slightly larger than the area of the opening 9 is exposed in consideration of misalignment of the optical mask. Accordingly, the red filter component 2 </ b> R is partially formed on the hard mask 6.

  Next, as shown in FIG. 18C, the blue filter component 2B and the red filter component 2R are etched back or chemical mechanically polished (CMP) until the surface of the hard mask 6 is exposed. The component 2B and the red filter component 2R are smoothed. In this way, the blue filter component 2B and the red filter component 2R are formed.

Next, as shown in FIG. 18D, the hard mask 6 is removed. Although not shown, the hard mask 6 is removed by isotropic dry etching through a resist mask as described above. Then, an inorganic film 24 is formed on the entire surface including the top and side surfaces of the blue filter component 2B and the red filter component 2R and the bottom surface of the opening 15 from which the hard mask 6 has been removed. This inorganic film 24 is a thin film of 200 nm or less, which is thinner than the film thickness of the filter component. As described above, for example, a silicon oxide (SiO ₂ ) film, a silicon nitride (SiN) film, or a silicon oxynitride (SiON) film formed by a low-temperature plasma film formation method is used for the inorganic film 24.

  Next, as illustrated in FIG. 18E, a green filter component material 11 </ b> G serving as the first color is applied to the entire surface so as to be embedded in the opening 15. Application is performed by spin coating. The green filter component material 11G is a material containing or not containing a photosensitive component in the material solid content, as described above.

  Next, as shown in FIG. 18F, the green filter material component 11G is smoothed using an etch back or chemical mechanical polishing (CMP) method until the surface of the inorganic film 24 is exposed.

  In this manner, the primary color Bayer array color filter 26 having the inorganic film 24 and having the green filter component 2G, the red filter component 2R, and the blue filter component 2B is obtained. As can be seen from FIG. 16, the red filter component 2R and the blue filter component 2B are formed such that the unit components form a square shape and are surrounded by the green filter component 2G, and all the green filter components 2G are connected.

  According to the method for manufacturing the solid-state imaging device according to the present embodiment, particularly the method for forming the color filter 26, the green filter component 2G, the red filter component 2R, and the blue filter component 2B are obtained by self-alignment using the hard mask 6 as a reference. Forming. Further, after forming the blue and red filter components 2B and 2R, the inorganic film 24 is formed on the entire surface, and after forming the green filter component material 11G, the green filter component material 11G is flattened until the inorganic film 24 is exposed. Yes. Thereby, the dimensional accuracy and overlay accuracy of the color filter are improved, and color mixing in the solid-state imaging device can be suppressed.

Similarly to the above, since the green filter component 2G is continuously integrated as a whole by connecting the four corners of each other, the adhesion area with the base is large. Further, since the green filter component 2G is formed using a thermosetting material or a photo-curing material, it is difficult to peel off compared to the case where a conventional pigment-dispersed photoresist is used. Therefore, the color filter of the present embodiment can form a color filter having a strong deposition strength with respect to the base.
The red filter component 2R and the blue filter component 2B have close contact surfaces on the bottom and side surfaces of the opening 9 of the hard mask 6, so that the adhesion is improved. The green filter component 2G is embedded through the inorganic film 24 in the opening 15 between the red and blue filter components 2R and 2B. Therefore, the green filter component 2G has a close contact surface on the bottom and side surfaces, and the contact area increases. In addition, since the green filter component 2G does not need to be patterned by exposure and is cured by sufficient exposure, the adhesion is improved.

  Although the inorganic film 24 of the above-described fourth embodiment is applied to the color filter 26 of the Bayer arrangement, other than that, although not illustrated, the color filter having the color filter component pattern shown in the above-described second embodiment is also applied. Can be applied.

<Fifth embodiment>
[Configuration example of solid-state imaging device, especially its color filter]
FIG. 19 shows a solid-state imaging device according to the present invention, particularly a fifth embodiment of the color filter. In the solid-state imaging device according to the fifth embodiment, after the imaging region is formed as described above, the color filter 28 shown in FIG. 19 is formed through the planarization film. As described in the first embodiment, the color filter 28 is configured by arranging a red filter component 2R, a green filter component 2G, and a blue filter component 2B in a so-called Bayer arrangement.

  As in the first embodiment, the color filter 28 is formed in a pattern in which each red filter component 2R and blue filter component 2B is surrounded by a green filter component 2G. The green filter component 2G, the red filter component 2R, and the blue filter component 2B are each formed in a regular square shape. As for the green filter 2G, the adjacent four corners 3 are in contact with each other and formed as a continuous unit as a whole. Therefore, the red filter component 2R and the blue filter component 2B are each formed independently by being surrounded by the green filter component 2G.

  In the present embodiment, a light shielding film 29 is provided at the boundary between the green filter component 2G and the red filter component 2R and at the boundary between the green filter component 2G and the blue filter component 2B. The light-shielding film 29 prevents light incident on the color filter components 2R, 2G, and 2B from entering the adjacent filter components by being condensed by the on-chip microlens. As the light shielding film 29, for example, a metal film having excellent reflectivity and light shielding properties such as W, Al, Ru, Mo, Ir, Rh, Cr, and Co is used. As the deposition temperature of the metal film, the substrate stage temperature is controlled so that the substrate temperature becomes 100 ° C. or lower. In terms of processing, tungsten (W) is preferable, and aluminum (Al) is preferable from the viewpoint of light reflectivity. The film thickness of the light shielding film 29 is suitably 100 nm or less. When the light shielding film 29 is formed of a metal film, each color filter component 2R, 2G, 2B is surrounded by the metal film and functions as a so-called reflective waveguide.

  Further, as will be apparent from the manufacturing method described later, the red filter component 2R and the blue filter component 2B are formed by self-alignment with respect to the green filter component 2G using a hard mask. As a material for forming each filter component 2R, 2G, 2B, a material containing or not containing a photosensitive component in the material solid content is used as described in the first embodiment.

  According to the solid-state imaging device according to the fifth embodiment, the red filter component 2R and the blue filter component 2B are formed by self-alignment with respect to the green filter component 2G using a hard mask. For this reason, the red filter component 2R, the green filter component 2G, and the blue filter component 2B do not overlap each other and are therefore formed with high accuracy without overlapping each other. In addition, since the green filter component 2G is continuously formed integrally with the four corners in contact with each other, it does not peel off. Thus, the processing accuracy of the color filter of the present embodiment is improved.

  Since the light shielding film 29 is formed at the boundary between the color filter components 2R and 2G and at the boundary between the color filter components 2B and 2G, the color filter components 2R, 2G, and 2B are formed by reflection and light shielding of the light shielding film 29, for example, a metal film. Incident light is prevented from entering adjacent filter components. That is, the light shielding film 29 can prevent color mixing with adjacent pixels.

  Since there is no overlap between the color filter components 2R, 2G, and 2B, the occurrence of color mixing is suppressed. Furthermore, since a material that does not contain a photosensitive component is used as the green filter component material, the thickness of the color filter can be reduced, and the sensitivity characteristics can be improved.

[Manufacturing Method of Solid-State Imaging Device, Especially Color Filter Forming Method]
Next, a method for manufacturing a solid-state imaging device according to the fifth embodiment, particularly a method for forming the color filter 28, will be described with reference to FIGS. 20 to 22 correspond to cross sections on the aa ′ line (green-red row) and bb ′ line (green-blue row) in FIG. 19.

First, as shown in FIG. 20, a green filter component 2G as a first color filter component is formed.
That is, as shown in FIG. 20A, the hard mask 6 having the opening 9 is formed on the entire surface of the substrate 5 where the green filter component is to be formed, by the same method as described above.

  Next, as shown in FIG. 20B, a light shielding film 29 is formed on the entire surface including the hard mask 6 and the opening 9. As the light shielding film 29, the above-described metal film is used. The light shielding film 29 has a thickness of about 100 nm or less.

  Next, as shown in FIG. 20C, anisotropic dry etching is performed on the light shielding film 29 to leave the light shielding film 29 only on the inner wall surface of the opening 9 of the hard mask 6.

  Next, as shown in FIG. 20D, a green filter component material 11G is applied to the entire surface of the hard mask 6 so as to be embedded in the opening 9. Application is performed by spin coating. The green filter component material 11G uses a material that does not contain a photosensitive component in the same material solid content as described above.

  Next, as shown in FIG. 20E, the entire surface of the green filter material 11G is etched back or subjected to chemical mechanical polishing (CMP) until the surface of the hard mask 6 is exposed to the green filter component material 11G. Remove. In this way, the green filter component 2G is formed. In the green filter component 2G, the unit components form a square shape and are arranged in a checkered pattern as a whole. However, the green filter component 2G is continuously and integrally formed so that the four corner portions of the adjacent green filter components 2G are in contact with each other.

  Next, as shown in FIG. 21, a red filter component 2R, which is a second color filter component, is formed. The blue filter component may be the second color filter component. The formation of the red filter component 2R is the same as that in the first embodiment.

  That is, as shown in FIG. 21A, a resist mask 14 having an opening 13 is formed on the hard mask 6 corresponding to the region of the red filter component to be formed on the surface having the green filter component 2G and the hard mask 6. . The width of the opening 13 is formed smaller than the width of the hard mask 6.

  Next, as shown in FIG. 21B, the hard mask 6 exposed in the opening 13 is removed by isotropic dry etching through the resist mask 14 to form the opening 15.

  Next, the resist mask that has become unnecessary is removed, and a red filter component material 11R is applied to the entire surface of the green filter component 2G and the hard mask 6 so as to be embedded in the opening 15 as shown in FIG. 21C. The application is performed by, for example, spin coating. As the red filter component material 11R, a material that does not contain a photosensitive component in the solid material content as described above is used.

  Next, as shown in FIG. 21D, the entire surface of the red filter component material 11R is etched back or chemical mechanical polishing (CMP) until the surfaces of the hard mask 6 and the green filter component 2G are exposed. In this way, the red filter component 2R is formed. The red filter component 2R is formed so that the unit component has a quadrangular shape and is surrounded by the free filter component 2G.

  Next, as shown in FIG. 22A, a blue filter component 2B which is a third color filter component is formed. The red filter component may be the third color filter component. The formation of the blue filter component 2B is the same as in the first embodiment described above.

  That is, as shown in FIG. 22A, an opening 16 is provided on the hard mask 6 corresponding to the region of the blue filter component to be formed on the surface having the green and red filter components 2G and 2R and the hard mask 6. A resist mask 17 is formed. The width of the opening 17 is formed smaller than the width of the hard mask 6.

  Next, as shown in FIG. 22B, the hard mask 6 exposed in the opening 16 is removed by isotropic dry etching through the resist mask 17 to form the opening 15.

  Next, the resist mask 17 that is no longer needed is removed, and as shown in FIG. 22C, the green and red filter components 2G and 2R and the blue filter component are formed on the entire surface of the hard mask 6 so as to be embedded in the opening 18. Material 11B is applied. The application is performed by, for example, spin coating. The blue filter component material 11B uses a material that does not contain a photosensitive component in the same material solid content as described above.

  Next, as shown in FIG. 22D, the blue filter component material 11B is etched back or the chemical mechanical polishing (CMP) until the surfaces of the green filter component 2G, the red filter component 2R and the light shielding film 29 are exposed. To do. Thereby, the blue filter component 2B is formed. The blue filter component 2B is formed so that the unit component has a quadrangular shape and is surrounded by the free filter component 2G.

  In this manner, the primary color Bayer array color filter 28 having the light shielding film 29 is obtained at the boundary between the green filter component 2G and the red filter component 2R and at the boundary between the green filter component 2G and the blue filter component 2B. As can be seen from FIG. 19, the red filter component 2R and the blue filter component 2B are unit-shaped in a square shape and surrounded by a green filter component 2G via a light-shielding film 29, and all the green filter components 2G are connected. To be formed.

  According to the method for manufacturing a solid-state imaging device according to the present embodiment, particularly the color filter forming method, the green filter component 2G, the red filter component 2R, and the blue filter component 2B are formed by self-alignment using the hard mask 6 as a reference. doing. After the hard mask 6 having the opening 9 is formed, a light shielding film 29 is formed and etched back to leave the light shielding film 29 only on the side wall surface of the opening 9, and then each color filter component 2G, 2R, 2B. To form. In this way, since the light shielding film 29 is formed at the boundary between the green filter component 2G and the red filter component 2R and at the boundary between the green filter component 2G and the blue filter component 2B, the light incident on each color filter component is adjacent to each other. It is not incident on the filter component. Thereby, the dimensional accuracy and overlay accuracy of the color filter are improved, and color mixing in the solid-state imaging device can be suppressed.

Similarly to the above, since the green filter component 2G is continuously integrated as a whole by connecting the four corners of each other, the adhesion area with the base is large. Moreover, since each color filter component 2G, 2R, 2B is formed using a thermosetting material or a photo-curing material, it is difficult to peel off as compared with the case where a conventional pigment-dispersed photoresist is used. Therefore, the color filter of the present embodiment can form a color filter having a strong deposition strength with respect to the base.
Further, the adhesion of the green filter component 2G, the red filter component 2R, and the blue filter component 2B is improved for substantially the same reason as described in the first, third, and fourth embodiments.

  Although the light-shielding film 29 of the above-described fifth embodiment is applied to the color filter 28 of the Bayer arrangement, the color filter having the pattern of the color filter component shown in the above-described second embodiment is also shown in FIG. Can be applied.

<Sixth embodiment>
[Configuration example of solid-state imaging device, especially its color filter]
FIG. 23 shows a solid-state imaging device according to the present invention, particularly a sixth embodiment of the color filter. In the solid-state imaging device according to the sixth embodiment, after the imaging region is formed as described above, the color filter 31 shown in FIG. 23 is formed through the planarization film. As described in the first embodiment, the color filter 31 is configured by arranging a red filter component 2R, a green filter component 2G, and a blue filter component 2B in a so-called Bayer arrangement.

  Similar to the first embodiment, the color filter 31 is formed in a pattern in which each of the red filter component 2R and the blue filter component 2B is surrounded by the green filter component 2G. The green filter component 2G, the red filter component 2R, and the blue filter component 2B are each formed in a regular square shape. As for the green filter 2G, the adjacent four corners 3 are in contact with each other and formed as a continuous unit as a whole. Therefore, the red filter component 2R and the blue filter component 2B are each formed independently by being surrounded by the green filter component 2G.

  In the present embodiment, a hollow portion, that is, an air gap 32 is formed at the boundary between the green filter component 2G and the red filter component 2R and at the boundary between the green filter 2G and the blue filter component 2B. Further, an inorganic film 33 that is substantially transparent in the visible light region is formed on the entire surface of each color filter component 2R, 2G, 2B so as to cover the air gap 32. Each color filter component 2R, 2G, 2B surrounded by the air gap 32 has a function as a so-called air gap type waveguide. That is, a hollow optical total reflection waveguide is configured. The width of the air gap 32 constituting the cladding part (low refractive index region) of the optical total reflection waveguide can be as small as about 100 nm, for example.

  Further, as will be apparent from the manufacturing method described later, the red filter component 2R and the blue filter component 2B are formed by self-alignment with respect to the green filter component 2G using a hard mask. As a material for forming each filter component 2R, 2G, 2B, a material containing or not containing a photosensitive component in the material solid content is used as described in the first embodiment.

  According to the solid-state imaging device according to the sixth embodiment, the red filter component 2R and the blue filter component 2B are formed by self-alignment with respect to the green filter component 2G using a hard mask. For this reason, the red filter component 2R, the green filter component 2G, and the blue filter component 2B do not overlap each other and are therefore formed with high accuracy without overlapping each other. In addition, since the green filter component 2G is continuously formed integrally with the four corners in contact with each other, it does not peel off. Thus, the processing accuracy of the color filter 31 of the present embodiment is improved.

  An air gap 32 is formed at the boundary between the filter components 2R and 2G and at the boundary between the filter components 2B and 2G, and a refractive index difference is generated, so that an optical total reflection waveguide is formed in each color filter component 2R, 2G, and 2B. can do. As a result, the light collected by the on-chip microlens and incident on the color filter components 2R, 2G, and 2B is not incident on the adjacent color filter components, thereby preventing color mixing.

  Further, since there is no overlap between the filter components 2R, 2G, and 2B, the occurrence of color mixing is suppressed. Furthermore, since a material that does not contain a photosensitive component is used as the green filter component material, the thickness of the color filter can be reduced, and the sensitivity characteristics can be improved.

  Since the inorganic film 33 is formed on the surface of each color filter component 2R, 2G, 2B, even if each color filter component is formed of either a filter material containing a dye or a pigment as a pigment, the light resistance of each color filter component Can be improved.

[Example of Manufacturing Method of Solid-State Imaging Device, Especially Example of Forming Color Filter]
Next, a method for manufacturing a solid-state imaging device according to the sixth embodiment, particularly a method for forming the color filter, will be described with reference to FIGS. The cross sections of FIGS. 24 to 26 correspond to the cross sections on the aa ′ line (green-red row) and the bb ′ line (green-blue row) of FIG.

First, as shown in FIG. 24, a green filter component 2G as a first color filter component is formed.
That is, as shown in FIG. 24A, the hard mask 6 having the opening 9 in the portion where the green filter component is to be formed is formed on the entire surface of the substrate 5 by the same method as described above.

Next, as shown in FIG. 24B, an inorganic film 35 is formed on the entire surface including the hard mask 6 and the opening 9. As the inorganic film 35, for example, a film such as SiN, SiO ₂ , or SiON formed by a low temperature plasma CVD film forming method can be used. When the hard mask 6 is formed of, for example, polysilicon or amorphous silicon, the inorganic film 35 can be formed of a SiN film. The thickness of the inorganic film 35 is preferably about 100 nm.

  Next, as shown in FIG. 24C, anisotropic dry etching is performed on the inorganic film 35 to leave the inorganic film 35 only on the inner wall surface of the opening 9 of the hard mask 6.

  Next, as shown in FIG. 24D, a green filter component material 11G is applied to the entire surface of the hard mask 6 so as to be embedded in the opening 9. Application is performed by spin coating. For the green filter component material 11G, a material containing or not containing a photosensitive component in the same material solid content as described above is used.

  Next, as shown in FIG. 24E, the entire surface of the green filter material 11G is etched back or subjected to chemical mechanical polishing (CMP) until the surface of the hard mask 6 is exposed to the green filter component material 11G. Remove. In this way, the green filter component 2G is formed. In the green filter component 2G, the unit components form a square shape and are arranged in a checkered pattern as a whole. However, the green filter component 2G is continuously and integrally formed so that the four corner portions of the adjacent green filter components 2G are in contact with each other.

  Next, as shown in FIG. 25, a red filter component 2R serving as a second color filter component is formed. The blue filter component may be the second color filter component. The formation of the red filter component 2R is the same as that in the first embodiment.

  That is, as shown in FIG. 25A, a resist mask 14 having an opening 13 is formed on the hard mask 6 corresponding to the region of the red filter component to be formed on the surface having the green filter component 2G and the hard mask 6. . The width of the opening 13 is formed smaller than the width of the hard mask 6.

  Next, as shown in FIG. 25B, only the hard mask 6 exposed to the opening 13 is removed by isotropic dry etching through the resist mask 14 to form the opening 15. The inorganic film 35 is selectively etched so that it remains without being etched. This etching uses a chemical dry etch (CDE) method using a mixture of oxygen gas and a fluorocarbon gas such as CF 4 or a gas obtained by mixing nitrogen with this gas.

  Next, the resist mask that is no longer needed is removed, and a red filter component material 11R is applied to the entire surface of the green filter component 2G and the hard mask 6 so as to be embedded in the opening 15 as shown in FIG. 25C. The application is performed by, for example, spin coating. For the red filter component material 11R, a material containing or not containing a photosensitive component in the same material solid content as described above is used.

  Next, as shown in FIG. 25D, the entire surface of the red filter component material 11R is etched back or subjected to chemical mechanical polishing (CMP) until the surfaces of the hard mask 6 and the green filter component 2G are exposed. In this way, the red filter component 2R is formed. The red filter component 2R is formed so that the unit component has a quadrangular shape and is surrounded by the green filter component 2G.

  Next, as shown in FIG. 26A, a blue filter component 2B as a third color filter component is formed. The red filter component may be the third color filter component. The formation of the blue filter component 2B is the same as in the first embodiment described above.

  That is, as shown in FIG. 26A, an opening 16 is provided on the hard mask 6 corresponding to the region of the blue filter component to be formed on the surface having the green and red color filter components 2G and 2R and the hard mask 6. A resist mask 17 is formed. The width of the opening 17 is formed smaller than the width of the hard mask 6.

  Next, as shown in FIG. 26B, the hard mask 6 exposed in the opening 16 is removed by isotropic dry etching through the resist mask 17 to form the opening 15.

  Next, the resist mask 17 that is no longer needed is removed, and as shown in FIG. 26C, blue filter components are formed on the entire surface of the green and red color filter components 2G and 2R and the hard mask 6 so as to be embedded in the openings 18. Material 11B is applied. The application is performed by, for example, spin coating. For the blue filter component material 11B, a material containing or not containing a photosensitive component in the same material solid content as described above is used.

  Next, as shown in FIG. 26D, the blue filter component material 11B is etched back or the chemical mechanical polishing (CMP) until the surfaces of the green filter component 2G, the red filter component 2R and the light shielding film 29 are exposed. To do. Thereby, the blue filter component 2B is formed. The blue filter component 2B is formed so that the unit component has a square shape and is surrounded by the green filter component 2G.

Next, as shown in FIG. 26E, the inorganic film 35 is selectively removed by dry etching, and at the boundary between the green filter component 2G and the red filter component 2R, and at the boundary between the green filter component 2G and the blue filter component 2B, An air gap 32 is formed. Etching at this time uses a chemical dry etching (CDE) method using a mixed gas of oxygen gas and fluorocarbon-based gas such as CF ₄ or a mixed gas obtained by adding nitrogen gas thereto.

Next, as shown in FIG. 26F, an inorganic film 33 is formed on the entire surface including the color filter components 2R, 2G, and 2B. Since the inorganic film 33 closes the air gap 32, the inorganic film 33 is formed of a transparent film that substantially transmits light in the visible light region. As the inorganic film 33, for example, a film such as SiO ₂ , SiN, or SiON formed by a low temperature plasma method can be used. The film formation temperature at that time is preferably about 150 ° C. to 250 ° C., and the film thickness is about 200 nm or less.

  In this manner, the primary color Bayer array color filter 31 in which the air gap 32 is formed at the boundary between the green filter component 2G and the red filter component 2R and at the boundary between the green filter component 2G and the blue filter component 2B is obtained. As can be seen from FIG. 23, the red filter component 2R and the blue filter component 2B are unit-shaped in a square shape and surrounded by the green filter component 2G via the air gap 32, and all the green filter components 2G are connected. To be formed.

  According to the method for manufacturing a solid-state imaging device according to the present embodiment, particularly the color filter forming method, the green filter component 2G, the red filter component 2R, and the blue filter component 2B are formed by self-alignment using the hard mask 6 as a reference. doing. In addition, after forming the hard mask 6 having the opening 9, the inorganic film 33 is formed, and after forming the color filter components 2G, 2R, and 2B, the inorganic film 33 is removed to form the air gap 32. The optical total reflection waveguide is formed in each color filter component. Thereby, the dimensional accuracy and overlay accuracy of the color filter are improved, and color mixing in the solid-state imaging device can be suppressed.

Similarly to the above, since the green filter component 2G is continuously integrated as a whole by connecting the four corners of each other, the adhesion area with the base is large. Moreover, since each color filter component 2G, 2R, 2B is formed using a thermosetting material or a photo-curing material, it is difficult to peel off as compared with the case where a conventional pigment-dispersed photoresist is used. Therefore, the color filter of the present embodiment can form a color filter having a strong deposition strength with respect to the base.
Further, the adhesion of the green filter component 2G, the red filter component 2R, and the blue filter component 2B is improved for substantially the same reason as described in the first, third, and fourth embodiments.

  Although the air gap 32 of the above-described sixth embodiment is applied to the color filter 31 of the Bayer arrangement, other than that, although not shown, the color filter having the color filter component pattern shown in the above-described second embodiment is also applied. Can be applied.

<Seventh embodiment>
[Configuration example of solid-state imaging device, especially its color filter]
FIG. 27 shows a solid-state imaging device according to the present invention, particularly a seventh embodiment of the color filter. In the solid-state imaging device according to the seventh embodiment, after the imaging region is formed as described above, the color filter 37 shown in FIG. 27 is formed through the planarization film. As described in the first embodiment, the color filter 37 is configured by arranging a red filter component 2R, a green filter component 2G, and a blue filter component 2B in a so-called Bayer arrangement.

  Similar to the first embodiment, the color filter 37 is formed in a pattern in which each red filter component 2R and blue filter component 2B are surrounded by a green filter component 2G. The green filter component 2G, the red filter component 2R, and the blue filter component 2B are each formed in a regular square shape. As for the green filter 2G, the adjacent four corners 3 are in contact with each other and formed as a continuous unit as a whole. Accordingly, the red filter component 2R and the blue filter component 2B are independently formed by being surrounded by the green filter component 2G.

In the present embodiment, a light shielding film 38 is formed at the boundary between the green filter component 2G and the red filter component 2R, and at the boundary between the green filter component 2G and the blue filter component 2B, and the green filter component 2G and the light shielding film are formed. An inorganic film 39 is formed on 38. The light-shielding film 38 is preferably formed using a metal film serving as a hard mask, which will be described later. For example, W, Al, Ru, Mo, Ir, Rh, Cr, Co, or the like is used for the metal light-shielding film 38 and functions as a reflective film. The light shielding film 38 can also be formed of an organic film. The inorganic film 39 functions as a stopper film in a smoothing process described later. As the inorganic film 39, for example, a silicon oxide (SiO ₂ ) film, a silicon nitride (SiN) film, a silicon oxycarbide (SiOC) film, a silicon oxynitride (SiON) film, or the like formed by a low temperature plasma CVD film formation method is used. It is done. The film forming temperature is preferably about 150 ° C. to 250 ° C., more preferably 200 ° C. or less. The thickness of the inorganic film 39 is suitably about 200 nm or less.

  Further, as will be apparent from the manufacturing method described later, the red filter component 2R and the blue filter component 2B are formed by self-alignment with respect to the green filter component 2G using a hard mask. As the material for forming the green filter component 2G, a material containing a photosensitive component or a material containing no photosensitive component in the same material solid content as described above is used. On the other hand, a photosensitive filter material is used as a material for forming the red filter component 2R and the blue filter component 2B.

  According to the solid-state imaging device according to the seventh embodiment, the red filter component 2R and the blue filter component 2B are formed by self-alignment with respect to the green filter component 2G using a hard mask. Further, the red filter component 2R and the blue filter component 2B can be smoothed with high accuracy so as to be almost equal to the film thickness of the green filter component 2G. For this reason, the red filter component 2R, the green filter component 2G, and the blue filter component 2B do not overlap each other and are therefore formed with high accuracy without overlapping each other. In addition, since the green filter component 2G is continuously formed integrally with the four corners in contact with each other, it does not peel off. Thus, the processing accuracy of the color filter of the present embodiment is improved.

  Since the light shielding film 38 is formed at the boundary between the color filter components 2R and 2G and at the boundary between the color filter components 2B and 2G, the light incident on each filter component does not enter the adjacent color filter component, and Interdiffusion of dyes is prevented. Further, since the filter components 2R, 2G, and 2B are formed by self-alignment, there is no overlap between the color filter components 2R, 2G, and 2B. Therefore, the occurrence of color mixing is suppressed. Further, when a material that does not contain a photosensitive component is used as the green filter component material, the thickness of the color filter can be reduced, and the sensitivity characteristics can be improved.

  Since the inorganic film 39 is formed on the green filter component 2G, when the green filter component is formed of a dye-containing filter material, the light resistance of the green filter is improved. The red filter component 2R and the blue filter component 2B can be formed of a filter material containing a pigment-based dye having excellent light resistance as compared with a filter material containing a dye.

[Example of manufacturing method of solid-state imaging device, especially color filter forming method]
Next, a method for manufacturing a solid-state imaging device according to the seventh embodiment, particularly a method for forming the color filter 37, will be described with reference to FIGS. The cross sections in FIGS. 28 to 30 correspond to the cross sections on the aa ′ line (green-red row) and the bb ′ line (green-blue row) in FIG.

  First, as shown in FIG. 28A, a hard mask 41 having a thickness t corresponding to the thickness of the color filter is formed on the entire surface of the substrate 5. The substrate 5 has a flattened film formed on the outermost surface in order to form a color filter thereon. The hard mask 41 of this example is formed of a metal film.

  Next, as shown in FIG. 28B, a resist mask 7 having an opening 8 at a portion corresponding to the green filter component to be formed is formed on the hard mask 41. The resist mask 7 is formed using a photolithography method.

  Next, as shown in FIG. 28C, the hard mask 41 facing the opening 8 of the resist mask 7 is selectively removed by anisotropic dry etching. By this selective etching, an opening 42 is formed in the hard mask 6 in the region where the green filter component is to be formed.

  Next, the resist mask 7 that has become unnecessary is removed. Next, as illustrated in FIG. 28D, a green filter component material 11 </ b> G is applied to the entire surface of the hard mask 41 so as to be embedded in the opening 42. Application is performed by spin coating. For the green filter component material 11G, a material containing or not containing a photosensitive component in the same material solid content as described above is used. The green filter component material 11G is applied and cured.

  Next, as shown in FIG. 28E, the entire surface of the green filter material 11G is etched back or subjected to chemical mechanical polishing (CMP) until the surface of the hard mask 41 is exposed to the green filter component material 11G. Remove. In this way, the green filter component 2G is formed. In the green filter component 2G, the unit components form a square shape and are arranged in a checkered pattern as a whole. However, the green filter component 2G is continuously and integrally formed so that the four corner portions of the adjacent green filter components 2G are in contact with each other. The remaining hard mask 41 is surrounded by the green filter component 2G.

Next, as shown in FIG. 29A, an inorganic film 39 is formed on the entire surface of the green filter component 2G and the hard mask 41. Next, as shown in FIG. As the inorganic film 39, for example, the above-described film such as SiO ₂ , SiN, or SiON formed by the low temperature plasma CVD film forming method is used. The film forming temperature is preferably about 150 ° C. to 250 ° C., more preferably 200 ° C. or less. The film thickness of the inorganic film 39 is about 200 nm or less.

  Next, as shown in FIG. 29B, a resist mask 44 having an opening 43 in a region corresponding to the hard mask 41 is formed on the inorganic film 39. Each opening 43 is formed to be narrower than the area of each hard mask 41 by an amount corresponding to the width d of the light shielding film to be formed in a later process.

  Next, as shown in FIG. 29C, the inorganic film 39 and the hard mask 41 are selectively removed by anisotropic dry etching through the resist mask 44 to form an opening 45. By this selective etching, a light shielding film 38 is formed on the side wall of the Glee filter component 2G. That is, the hard mask 41 made of metal remaining after selective etching becomes the light shielding film 38.

  Next, as shown in FIG. 30A, the second color red filter component material 11 </ b> R is applied to the entire surface so as to be embedded in the opening 45. Application is performed by spin coating. This red filter component material 11R is a photosensitive filter material. As the photosensitive filter material, either a negative type or a positive type can be used. In this example, a negative type material that cures a portion irradiated with light is used.

  Then, the red filter component material 11R is exposed and developed through an optical mask that transmits light only to the region where the red filter component is to be formed, thereby forming the red filter component 2R. At this time, an area slightly larger than the area of the opening 45 is exposed in consideration of misalignment of the optical mask. Accordingly, the red filter component 2R is formed so as to partially overlap the green filter component 2G.

  Next, as shown in FIG. 30B, the third color blue filter component material 11 </ b> B is applied to the entire surface so as to be embedded in the remaining openings 45. Application is performed by spin coating. This blue filter component material 11B is a photosensitive filter material. As the photosensitive filter material, either a negative type or a positive type can be used. In this example, a negative type material that cures a portion irradiated with light is used.

  Then, the blue filter component material 11B is exposed through an optical mask that transmits light only to a region where the blue filter component is to be formed, and developed to form the blue filter component 2B. At this time, an area slightly larger than the area of the opening 45 is exposed in consideration of misalignment of the optical mask. Accordingly, the blue filter component 2B is partially overlapped with the green filter component 2G.

  Next, as shown in FIG. 30C, the red filter component 2R and the blue filter component 2B are etched back until the surface of the inorganic film 39 is exposed, or smoothed using chemical mechanical polishing (CMP).

  In this way, a primary color Bayer array color filter having the light shielding film 38 made of metal at the boundary of each color filter component and the inorganic film 39 on the green filter component 2G is obtained. As can be seen from FIG. 27, the red filter component 2R and the blue filter component 2B are unit components having a quadrangular shape and the periphery is surrounded by the green filter component 2G via the light-shielding film 38, and all the green filter components 2G are connected. To be formed.

  According to the method for manufacturing the solid-state imaging device according to the present embodiment, particularly the method for forming the color filter 37, the green filter component 2G, the red filter component 2R, and the blue filter component 2B are separated from each other on the basis of the metal hard mask 41. Can be formed with a lining. Further, after the inorganic film 39 is formed, the light shielding film 38 can be formed by selective etching, leaving a part of the hard mask 41 on the side wall of the green filter component 2G. In this way, the color filter components 2R, 2G, and 2B having a reflective waveguide structure can be formed, and color mixing in the solid-state imaging device can be suppressed.

Similarly to the above, since the green filter component 2G is continuously integrated as a whole by connecting the four corners of each other, the adhesion area with the base is large. Further, since the green filter component 2G is formed using a thermosetting material or a photo-curing material, it is difficult to peel off compared to the case where a conventional pigment-dispersed photoresist is used. Therefore, the present embodiment can form a color filter having a high deposition strength with respect to the base.
Further, the adhesion of the green filter component 2G, the red filter component 2R, and the blue filter component 2B is improved for substantially the same reason as described in the first, third, and fourth embodiments.

  Since the inorganic film 39 is formed on the surface of each green filter component 2G, the light resistance of the green filter component 2G can be increased. Thereby, the green filter component 2G can be formed of a dye-containing filter component material having excellent spectral characteristics.

In the above example, the metal light-shielding film 38 is formed on the boundary between the filter components, that is, the side wall of the color filter component. However, a light-shielding film made of an organic film may be formed. At this time, the organic film can be formed of a film having a refractive index lower than that of the color filter or a film having a light absorption property. The color filter forming method in this case is the same as the forming method shown in FIGS. However, the hard mask 41 made of a metal film is replaced with a hard mask made of an organic film. As the organic film having a low refractive index, a fluorine-containing resin such as a fluorine-containing acrylic resin or a fluorine-containing siloxane resin can be used. Further, by using a resin in which porous silica fine particles are dispersed in these resins, the refractive index can be further reduced. As the light-absorbing organic film, a carbon black-containing acrylic resin or the like can be used.
Even when such an organic film is used, the same effects as described in the example using the metal film of the seventh embodiment can be obtained.

  The light shielding film 38 and the inorganic film 39 of the seventh embodiment described above are applied to the color filter 37 of the Bayer arrangement, but have the pattern of the color filter component shown in the second embodiment, although not shown. It can also be applied to color filters.

<Eighth embodiment>
[Configuration example of solid-state imaging device, especially its color filter]
FIG. 31 shows an eighth embodiment of a solid-state imaging device according to the present invention, particularly a color filter thereof. In the solid-state imaging device according to the eighth embodiment, after the imaging region is formed as described above, the color filter 47 shown in FIG. 31 is formed through the planarization film. As described in the first embodiment, the color filter 47 is configured by arranging a red filter component 2R, a green filter component 2G, and a blue filter component 2B in a so-called Bayer arrangement.

  As in the first embodiment, the color filter 47 is formed in a pattern in which each red filter component 2R and blue filter component 2B are surrounded by a green filter component 2G. The green filter component 2G, the red filter component 2R, and the blue filter component 2B are each formed in a regular square shape. As for the green filter 2G, the adjacent four corners 3 are in contact with each other and formed as a continuous unit as a whole. Therefore, the red filter component 2R and the blue filter component 2B are each formed independently by being surrounded by the green filter component 2G.

In the present embodiment, an inorganic film 48 having a substantially transparent visible light region is formed on the green filter component 2G. As the inorganic film 48, for example, a silicon oxide (SiO ₂ ) film, a silicon nitride (SiN) film, a silicon oxycarbide (SiOC) film, a silicon oxynitride (SiON) film or the like formed by a low temperature plasma CVD film formation method is used. It is done. The film forming temperature is preferably about 150 ° C. to 250 ° C., more preferably 200 ° C. or less. The thickness of the inorganic film 48 is suitably about 200 nm or less.

  Further, as will be apparent from the manufacturing method described later, the second color and the third color, for example, red and blue filter components are formed by self-alignment with respect to the filter component of the first color, for example, green. The green filter component 2G is formed of a photosensitive filter material or a filter material not containing a photosensitive component, and the red filter component 2R and the blue filter component 2B are formed of a photosensitive filter material.

  According to the solid-state imaging device according to the eighth embodiment, red and blue filter components 2R and 2B are formed by self-alignment with respect to the green filter component 2G. For this reason, the color filter components 2R, 2G, and 2B do not overlap each other and are therefore formed with high accuracy without overlapping each other. In addition, since the green filter component 2G is continuously formed integrally with the four corners in contact with each other, it does not peel off. Thus, the processing accuracy of the color filter of the present embodiment is improved.

  Since the inorganic film 48 is formed on the green filter component 2G, the light resistance of the green filter is improved when the green filter component 2G is formed of a dye-containing filter material. The red filter component 2R and the blue filter component 2B can be formed of a filter material containing a pigment-based dye having excellent light resistance as compared with a filter material containing a dye.

[Example of Manufacturing Method of Solid-State Imaging Device, Especially Example of Forming Color Filter]
Next, a method for manufacturing a solid-state imaging device according to the eighth embodiment, particularly a method for forming a color filter thereof, will be described with reference to FIG. The cross section in FIG. 32 corresponds to the cross section on the aa ′ line (green-red row) and the bb ′ line (green-blue row) in FIG.

First, as shown in FIG. 32A, a filter component material film 11Gm of the first color having a required film thickness, for example, green, is formed on the substrate 5. The substrate 5 has a flattened film formed on the outermost surface in order to form a color filter thereon. As the green filter component material, for example, a photosensitive filter material can be used. As the photosensitive filter material, a negative type or a positive type can be used, but in this example, a negative type is used. The green filter material film 11Gm can be formed of a material that does not contain a photosensitive component in the material solid content described above.
The green filter component material film 11Gm is formed over the entire surface of the substrate 5, that is, the entire surface of the semiconductor wafer before being cut into chips.

Next, as shown in FIG. 32B, an inorganic film 48 is formed over the entire surface of the green filter component material film 11Gm. As described above, for example, the inorganic film 48 is formed of a film such as SiO ₂ , SiN, or SiON formed by a low temperature plasma film forming method. The film forming temperature is preferably about 150 ° C. to 250 ° C., more preferably 200 ° C. or less. The film thickness of the inorganic film 48 is about 200 nm or less.

  Next, as shown in FIG. 32C, a resist mask 51 having openings 49 in the regions where the second and third color components, for example, red and blue filter components are to be formed, is formed on the inorganic film 48.

  Next, as shown in FIG. 32D, the inorganic film 48 and the green filter component material film 11Gm are selectively removed by anisotropic dry etching through the resist mask 51 to form the green filter component 2G. An opening 52 is formed in the region where the red and blue filter components are to be formed.

  Next, as shown in FIG. 32E, the second color red filter component material 11 </ b> R is applied to the entire surface so as to be embedded in the opening 52. The red filter component material 11R is a photosensitive filter material.

  Then, the red filter component material 11R is exposed and developed through an optical mask that transmits light only to the region where the red filter component is to be formed, thereby forming the red filter component 2R. At this time, an area slightly larger than the area of the opening 52 is exposed in consideration of misalignment of the optical mask. Accordingly, the red filter component 2R is formed so as to partially overlap the green filter component 2G.

  Next, as illustrated in FIG. 32F, the third color blue filter component material 11 </ b> B is applied to the entire surface so as to be embedded in the remaining openings 52. This blue filter component material 11B is a photosensitive filter material.

  Then, the blue filter component material 11B is exposed through an optical mask that transmits light only to a region where the blue filter component is to be formed, and developed to form the blue filter component 2B. At this time, an area slightly larger than the area of the opening 52 is exposed in consideration of misalignment of the optical mask. Accordingly, the blue filter component 2B is partially overlapped with the green filter component 2G.

  Next, as shown in FIG. 32G, the red filter component 2R and the blue filter component 2B are etched back until the surface of the inorganic film 48 is exposed, or smoothed using chemical mechanical polishing (CMP).

  In this way, the primary color Bayer array color filter 47 having the inorganic film 48 on the green filter component 2G is obtained. As can be seen from FIG. 31, the red filter component 2R and the blue filter component 2B are formed by connecting unit components in a square shape and being surrounded by the green filter component 2G, and all the green filter components 2G are connected.

  In addition, the photosensitive filter material used as each color filter component material described above can be either a negative type or a positive type. In this example, a negative type material that cures a portion irradiated with light is used.

According to the method for manufacturing a solid-state imaging device according to the present embodiment, particularly the method for forming the color filter 47, the red filter component 2R and the blue filter component 2B can be formed by self-alignment using the green filter component 2G as a reference. it can. For this reason, the color filter components 2R, 2G, and 2B do not overlap each other, and a color filter can be formed with high accuracy. Since the green filter component 2G is continuously formed integrally with the four corners in contact with each other, the green filter component 2G does not peel off and can form a highly reliable color filter. It is possible to form a color filter having a high deposition strength with respect to the base.
Further, the adhesion of the green filter component 2G, the red filter component 2R, and the blue filter component 2B is improved for substantially the same reason as described in the first, third, and fourth embodiments.

  Since the inorganic film 48 is formed on the surface of each green filter component 2G, the light resistance of the green filter component 2G can be increased. Thereby, the green filter component 2G can be formed of a dye-containing filter component material having excellent spectral characteristics.

  Although the inorganic film 48 of the above-described eighth embodiment is applied to the color filter 47 of the Bayer arrangement, other than that, although not shown, the color filter having the pattern of the color filter component shown in the above-described second embodiment is also applied. Can be applied.

<Ninth Embodiment>
[Configuration example of solid-state imaging device, especially its color filter]
FIG. 33 shows a solid-state imaging device according to the present invention, particularly a ninth embodiment of the color filter. In the solid-state imaging device according to the ninth embodiment, after the imaging region is formed as described above, the color filter 54 shown in FIG. 33 is formed through the planarization film. As described in the first embodiment, the color filter 54 is configured by arranging a red filter component 2R, a green filter component 2G, and a blue filter component 2B in a so-called Bayer arrangement.

  As in the first embodiment, the color filter 54 is formed in a pattern in which each red filter component 2R and blue filter component 2B are surrounded by a green filter component 2G. The green filter component 2G, the red filter component 2R, and the blue filter component 2B are each formed in a regular square shape. As for the green filter 2G, the adjacent four corners 3 are in contact with each other and formed as a continuous unit as a whole. Therefore, the red filter component 2R and the blue filter component 2B are each formed independently by being surrounded by the green filter component 2G.

In the present embodiment, the inorganic film 55 that is continuous with the upper and side surfaces of the green filter component 2G, the bottom surface of the red filter component 2R, and the bottom surface of the blue filter component 2B and having a substantially transparent visible light region is formed. It is formed. As the inorganic film 55, for example, a silicon oxide (SiO ₂ ) film, a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, or the like formed by a low temperature plasma CVD film formation method is used. The film forming temperature is preferably about 150 ° C. to 250 ° C., more preferably 200 ° C. or less. The thickness of the inorganic film 48 is suitably about 200 nm or less.

  Further, as will be apparent from the manufacturing method described later, the second color and the third color, for example, red and blue filter components are formed by self-alignment with respect to the filter component of the first color, for example, green. The green filter component 2G, the red filter component 2R, and the blue filter component 2B are formed of a photosensitive filter material.

  According to the solid-state imaging device according to the ninth embodiment, the red and blue filter components 2R and 2B are formed by self-alignment with respect to the green filter component 2G. For this reason, the color filter components 2R, 2G, and 2B do not overlap each other and are therefore formed with high accuracy without overlapping each other. In addition, since the green filter component 2G is continuously formed integrally with the four corners in contact with each other, it does not peel off. Thus, the processing accuracy of the color filter of the present embodiment is improved.

  Since the inorganic film 55 is formed on the green filter component 2G, the light resistance of the green filter is improved when the green filter component 2G is formed of a dye-containing filter material. The red filter component 2R and the blue filter component 2B can be formed of a filter material containing a pigment-based dye having excellent light resistance as compared with a filter material containing a dye.

  In addition, since the inorganic film 48 is formed at the boundary between the filter components 2R and 2G and the boundary between the filter components 2B and 2G, the mutual diffusion of the respective dyes is prevented and the occurrence of color mixing is suppressed.

[Example of Manufacturing Method of Solid-State Imaging Device, Especially Example of Forming Color Filter]
Next, a method for manufacturing a solid-state imaging device according to the ninth embodiment, particularly a method for forming a color filter thereof, will be described with reference to FIG. The cross section in FIG. 34 corresponds to the cross section on the aa ′ line (green-red row) and the bb ′ line (green-blue row) in FIG.

  First, as shown in FIG. 34A, a filter component material film 11Gm of a first color, for example, green having a required film thickness is formed on the substrate 5. The substrate 5 has a flattened film formed on the outermost surface in order to form a color filter thereon. As the green filter component material, for example, a photosensitive filter material can be used. As the photosensitive filter material, a negative type or a positive type can be used, but in this example, a negative type is used. The green filter material film 11Gm can be formed of a material that does not contain a photosensitive component in the material solid content described above.

  Next, as shown in FIG. 34B, on the green filter component material film 11Gm, a resist mask 51 having an opening 49 in the region where the second and third color, for example, red and blue filter components are to be formed is formed. To do.

  Next, as shown in FIG. 34C, the green filter component material 11Gm is selectively removed by anisotropic dry etching through the resist mask 51 to form the green filter component 2G. An opening 52 is formed in the region where the red and blue filter components are to be formed.

Next, after removing the resist mask 51, an inorganic film 55 is formed over the entire surface of the green filter component 2G and the inner wall surface of the opening 52, as shown in FIG. 34D. As described above, the inorganic film 55 is made of a film such as SiO ₂ , SiN, or SiON formed by, for example, a low temperature plasma CVD film forming method. The film forming temperature is preferably about 150 ° C. to 250 ° C., more preferably 200 ° C. or less. The film thickness of the inorganic film 55 is about 200 nm or less.

  Next, as illustrated in FIG. 34E, the second color red filter component material 11 </ b> R is applied to the entire surface so as to be embedded in the opening 52. The red filter component material 11R is a photosensitive filter material.

  Then, the red filter component material 11R is exposed and developed through an optical mask that transmits light only to the region where the red filter component is to be formed, thereby forming the red filter component 2R. At this time, an area slightly larger than the area of the opening 52 is exposed in consideration of misalignment of the optical mask. Accordingly, the red filter component 2R is formed so as to partially overlap the green filter component 2G.

  Next, as shown in FIG. 34F, the third color blue filter component material 11 </ b> B is applied to the entire surface so as to be embedded in the remaining openings 52. This blue filter component material 11B is a photosensitive filter material.

  Then, the blue filter component material 11B is exposed through an optical mask that transmits light only to a region where the blue filter component is to be formed, and developed to form the blue filter component 2B. At this time, an area slightly larger than the area of the opening 52 is exposed in consideration of misalignment of the optical mask. Accordingly, the blue filter component 2B is partially overlapped with the green filter component 2G.

  Next, as shown in FIG. 34G, the red filter component 2R and the blue filter component 2B are etched back until the surface of the inorganic film 55 is exposed, or smoothed by chemical mechanical polishing (CMP).

  In this manner, the primary color Bayer array color filter 54 having the inorganic film 55 is obtained. As can be seen from FIG. 33, the red filter component 2R and the blue filter component 2B are formed by connecting unit components in a square shape and being surrounded by the green filter component 2G, and all the green filter components 2G are connected.

  In addition, the photosensitive filter material used as each color filter component material described above can be either a negative type or a positive type. In this example, a negative type material that cures a portion irradiated with light is used.

According to the method for manufacturing a solid-state imaging device according to the present embodiment, particularly the method for forming the color filter 54, the red filter component 2R and the blue filter component 2B can be formed by self-alignment using the green filter component 2G as a reference. it can. For this reason, the color filter components 2R, 2G, and 2B do not overlap each other, and a color filter can be formed with high accuracy. Since the green filter component 2G is continuously formed integrally with the four corners in contact with each other, the green filter component 2G does not peel off and can form a highly reliable color filter. Therefore, the present embodiment can form a color filter having a high deposition strength with respect to the base.
Further, the adhesion of the green filter component 2G, the red filter component 2R, and the blue filter component 2B is improved for substantially the same reason as described in the first, third, and fourth embodiments.

  Since the inorganic film 55 is formed at the boundary between the filter components 2R and 2G and the boundary between the filter components 2B and 2G, a color filter that prevents the mutual diffusion of the respective dyes and suppresses the occurrence of color mixing is formed. Can do.

  Since the inorganic film 55 is formed on the surface of each green filter component 2G, the light resistance of the green filter component 2G can be increased. Thereby, the green filter component 2G can be formed of a dye-containing filter component material having excellent spectral characteristics.

  The inorganic film 55 of the ninth embodiment described above is applied to the color filter 54 having the Bayer arrangement, but other than that, although not illustrated, the color filter having the pattern of the color filter component described in the second embodiment is also used. Can be applied.

<Tenth embodiment>
[Example of Manufacturing Method of Solid-State Imaging Device, Especially Example of Forming Color Filter]
FIG. 35 shows a tenth embodiment of a method for manufacturing a solid-state imaging device according to the present invention, particularly a method for forming a color filter thereof. This embodiment corresponds to a modification of the color filter forming method of the ninth embodiment described above, and the configuration of the finally obtained color filter is the same as that shown in FIG. The cross section of FIG. 35 corresponds to the cross section on the aa ′ line (green-red row) and the bb ′ line (green-blue row) of FIG.

  In the color filter forming method according to the present embodiment, first, as shown in FIG. 35A, a first color, for example, a green filter component material film 11Gm having a required film thickness is formed on a substrate 5. The substrate 5 has a flattened film formed on the outermost surface in order to form a color filter thereon. As the green filter component material, for example, a photosensitive filter material can be used. As the photosensitive filter material, a negative type or a positive type can be used, but in this example, a negative type is used. The green filter material film 11Gm can be formed of a material that does not contain a photosensitive component in the material solid content described above.

  Next, as shown in FIG. 35B, on the green filter component material film 11Gm, a resist mask 58 having openings 57 in regions where the second and third color components, for example, red and blue filter components are to be formed is formed. To do. The resist mask 58 is set to a thickness that eliminates the residue of the resist mask when the anisotropic dry etching for the green filter component material film 11Gm is completed in the next step of FIG. 35C.

  Next, as shown in FIG. 35C, the green filter component material 11Gm is selectively removed by anisotropic dry etching through the resist mask 58 to form the green filter component 2G. In this etching step, the resist mask 58 is completely removed at the same time as the patterning of the green filter component material 11Gm is completed. An opening 52 is formed in the region where the red and blue filter components are to be formed.

  If the resist mask 58 remains after this dry etching, the remaining film of the resist mask may be removed with an organic solvent.

  The subsequent steps from FIG. 35D to FIG. 35G are the same as the steps in FIG. 34D to FIG. Thus, the color filter 54 shown in FIG. 33 is obtained.

  According to the method for manufacturing a solid-state imaging device according to the tenth embodiment, particularly the color filter forming method, the resist mask 58 is completely removed simultaneously with the completion of the patterning of the green filter component material 11Gm. This step is omitted. Therefore, compared with the method for forming the color filter shown in FIG. 34 described above, the formation process can be simplified since the resist mask is removed and removed.

  In addition, the same effects as described in the ninth embodiment can be obtained.

<Eleventh embodiment>
[Manufacturing Method of Solid-State Imaging Device, Especially Method for Forming Color Filter]
FIG. 36 shows an eleventh embodiment of a method for manufacturing a solid-state imaging device according to the present invention, particularly a method for forming a color filter thereof. This embodiment corresponds to a modification of the color filter forming method of the ninth embodiment described above, and the configuration of the finally obtained color filter is the same as that shown in FIG. The cross section in FIG. 36 corresponds to the cross section on the aa ′ line (green-red row) and the bb ′ line (green-blue row) in FIG. The eleventh embodiment is the same as the tenth embodiment, except that the blue filter component material uses a material that does not contain a photosensitive component in the material solid content described above. In addition, you may use the material containing a photosensitive component for this blue filter component material.

  In the method for forming a color filter according to the present embodiment, the steps of FIGS. 36A to 36E are the same as the steps of FIGS. That is, first, as shown in FIG. 36A, a filter component material film 11Gm of a first color having a required film thickness, for example, green, is formed on the substrate 5.

  Next, as shown in FIG. 36B, a resist mask 58 having openings 57 is formed on the green filter component material film 11Gm in regions where the second and third color components, for example, red and blue filter components are to be formed. To do. The resist mask 58 is set to a thickness that eliminates the residue of the resist mask upon completion of anisotropic dry etching for the green filter component material film 11Gm in the next step of FIG. 36C.

  Next, as shown in FIG. 35C, the green filter component material 11Gm is selectively removed by anisotropic dry etching through the resist mask 58 to form the green filter component 2G. In this dry etching process, the resist mask 58 is completely removed at the same time as the patterning of the green filter component material 11Gm is completed. An opening 52 is formed in the region where the red and blue filter components are to be formed.

  If the resist mask 58 remains after this dry etching, the remaining film of the resist mask may be removed with an organic solvent.

  Next, as shown in FIG. 36D, an inorganic film 55 is formed over the entire surface of the green filter component 2G and the inner wall surface of the opening 52.

  Next, as illustrated in FIG. 36E, the second color red filter component material 11 </ b> R is applied to the entire surface so as to be embedded in the opening 52. The red filter component material 11R is a photosensitive filter material. Next, the red filter component material 11R is exposed and developed to form the red filter component 2R.

  Next, as shown in FIG. 36F, a blue filter component material 11B of the third color is formed on the entire surface. At this time, the blue filter component material 11B uses a material containing or not containing a photosensitive component in the above-described material solid content.

  Next, as shown in FIG. 36G, the red filter component 2R and the blue filter component 2B are etched back until the surface of the inorganic film 55 is exposed, or smoothed by chemical mechanical polishing (CMP).

  In this manner, the primary color Bayer array color filter 54 having the inorganic film 55 is obtained.

  According to the method for manufacturing a solid-state imaging device according to the eleventh embodiment, particularly the color filter forming method, the resist mask 58 is completely removed simultaneously with the completion of the patterning of the green filter component material 11Gm. This step is omitted. Therefore, in comparison with the method for forming the color filter shown in FIG. 34 described above, when a material that does not contain a photosensitive component is used for the third color blue filter component, the exposure process is omitted, and the resist mask is removed and removed. Since it is omitted, the formation process can be simplified.

  In addition, the same effects as described in the ninth embodiment can be obtained.

  In the eighth, ninth, tenth, and eleventh embodiments described above, the second color is red and the third color is blue, but the formation order may be reversed.

<Twelfth embodiment>
[Configuration example of solid-state imaging device]
FIG. 37 shows an eleventh embodiment of the solid-state imaging device according to the present invention. The solid-state imaging device 61 according to the twelfth embodiment includes an imaging region 62 and a peripheral circuit unit 63, and the color filter 64 on the imaging region 62 is configured by the color filter described in each of the above embodiments. The In this embodiment, in order to suppress flare, the blue filter component 2B or a laminated film of the blue filter component 2B and the red filter component 2R is formed to extend from the imaging region 62 to the peripheral circuit portion 63. (Anti-flare film). At that time, the blue filter component 2B or the laminated film is rounded so that the corner portion 65 at the end thereof is curved. It is desirable that the corner portion of the blue filter component 2B or the portion of the laminated film near the electrode pad 66 is also curved.

  In the embodiment described above, when each color filter component is smoothed by chemical mechanical polishing, if the terminal corner portion is, for example, a right angle, the polishing pressure is concentrated on the corner portion 65, as shown in FIG. The corner portion 65 may be partially cut off. When scraped, dust is generated and adversely affects the solid-state imaging device.

  According to the solid-state imaging device 61 according to the twelfth embodiment, polishing is performed by rounding the blue fill component 2B extending to the peripheral circuit portion 63 or suppressing the corner portion 65 at the end of the laminated film to suppress flare. Pressure concentration is eased. Therefore, the corner portion 65 is not polished, the generation of dust can be suppressed, and a highly reliable solid-state imaging device can be provided. Although the flare prevention film has been described as an example so far, the present embodiment is not limited to this, and can be applied to a pattern having a shape perpendicular to the corner portion in an area other than the imaging area.

<13th Embodiment>
Although not shown, the solid-state imaging device according to the present invention, particularly the color filter, can also be formed as follows. First, a hard mask having openings at portions where the second and third colors, for example, the red filter component and the blue filter component are to be formed, is formed on the entire surface of the substrate. Next, the second color filter component material and the third color filter component material are selectively applied in the openings to form the second color red filter component and the third color blue filter component. Next, the hard mask is removed, and a first color, for example, a green filter component material is applied in the removed opening to form a green filter component. In this way, the primary color Bayer array color filter shown in FIG. 1 in which the periphery of the red filter component and the blue filter component is surrounded by the green filter component is formed.

According to the solid-state imaging device according to the thirteenth embodiment, particularly the color filter and the formation method thereof, the green filter component is formed in a self-aligned manner with respect to the red filter component and the blue filter component using the hard mask. . For this reason, the red filter component, the green filter component, and the blue filter component do not overlap each other, and therefore can be formed with high accuracy without overlapping each other. In addition, since the green filter component is continuously formed integrally with the four corners, it does not peel off. Thus, the processing accuracy of the color filter of the present embodiment is improved. Moreover, since there is no overlap between the filter components, the occurrence of color mixing is suppressed. Furthermore, since the filter film thickness can be reduced by being regulated by the film thickness of the hard mask, the sensitivity characteristics can be improved accordingly.
Further, the adhesion of the green filter component 2G, the red filter component 2R, and the blue filter component 2B is improved for substantially the same reason as described in the first, third, and fourth embodiments.

<Fourteenth embodiment>
[Configuration example of solid-state imaging device, especially its color filter]
FIG. 39 shows a solid-state imaging device according to the present invention, particularly a fourteenth embodiment thereof. In the color filter 68 according to the present embodiment, the green filter component 2G, the red filter component 2R, and the blue filter component 2B are independently formed. The inorganic film 24 according to the third and fourth embodiments, the light shielding film 29 according to the fifth embodiment, and the light shielding film according to the seventh embodiment, which are formed at the boundary between the color filter components 2G, 2R, and 2B. 38, the inorganic films 55 of the ninth to eleventh embodiments are continuously formed in the vertical and horizontal directions. The formation method of the color filter 68 is in accordance with the third, fourth, fifth, seventh, and ninth to eleventh embodiments.

  Also in the color filter 68 according to the fourteenth embodiment, each color filter component can be formed by self-alignment. Further, in the embodiment in which color mixing between pixels is prevented and the inorganic film is formed on the color filter component, the light resistance of the color filter component can be improved.

An example of common formation conditions when forming the color filter according to each of the above-described embodiments will be described.
For example, a pigment-added photopolymerization negative resist is used as a material for forming a color filter component using a photosensitive filter material, including the formation of the green filter component material film 11Gm. The film forming conditions are as follows. After the negative resist is spin-coated on the wafer, it is pre-baked, and the entire surface of the wafer is exposed using a reduced projection type stepper using i-line as a light source. Next, post baking is performed to complete the film formation.

  An example of the conditions for forming a resist mask, that is, a photoresist pattern is shown. As the photoresist material, a novolac positive resist using naphthoquinone azide as a photosensitive agent is used. The film forming conditions are as follows. The positive resist is spin-coated and then pre-baked, and pattern exposure is performed using a reduction projection type stepper using i-line as a light source. Next, post-baking after exposure is performed. Next, paddle development with a 2.38% aqueous solution of tetramethylammonium hydroxide (TMAH) is performed, and post-baking is performed to complete the film formation. A developer obtained by adding a surfactant to a 2.38% TMAH aqueous solution may be used.

An example of dry etching conditions for the green filter component material film 11Gm is shown. As the etching apparatus, a microwave plasma type etching apparatus, a parallel plate type RIE apparatus, a high-pressure narrow gap type plasma etching apparatus, an ECR type etching apparatus, a transformer coupled plasma type etching apparatus, an inductively coupled plasma type etching apparatus, or the like is used. Further, as the etching apparatus, another high-density plasma etching apparatus such as a helicon wave plasma etching apparatus is used. For example, an inductive plasma etching apparatus is used, and as an etching gas species, in addition to chlorofluorocarbon gases such as CF ₄ , C ₂ F ₆ , C ₃ F ₈ , C ₄ F ₈ , CH ₂ F ₂ , and CHF ₃ alone. In these gases, O ₂ , Ar, He, N ₂ gas or the like may be added. Regarding etch back conditions by dry etching of organic films including color filter component material films, color filter components after exposure, development, etc., excluding the green filter component material film 11Gm, in addition to the above-mentioned conditions, Cl ₂ and BCl ₃ Alternatively, a gas obtained by adding O ₂ or N ₂ gas to a halogen-based gas such as HBr halo may be used. In this case, the end point of etching can be detected by detecting an emission spectrum caused by plasma by dry etching, which is more preferable.

  The film thickness of the resist mask (photoresist film) in the tenth and eleventh embodiments was set so that there was no remaining resist mask film as described above when dry etching was completed. In the present embodiment, the patterning state of the green filter component was confirmed with an SEM (Scanning Electron Microscope) photograph. As a result, it was confirmed that both the material internally containing the pigment as the coloring matter and the material internally containing the dye were in a good patterning state.

  An organic solvent for removing the remaining film of the resist mask when the remaining film of the resist mask remains after dry etching through the resist mask is shown below. Although the organic solvent overlaps with the above, for example, N-methyl-2-pyrrolidone, γ-butyrolactone, cyclopentanone, cyclohexanone, isophorone, N, N-dimethylacetamide, dimethylimidazolinone, tetramethylurea, dimethyl sulfoxide, Diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol dibutyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, dipropylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, methyl lactate, butyl lactate, methyl-1,3-butylene glycol acetate, 1,3-butylene glycol-3-monomethyl ether, methyl pyruvate, pyruvate Chill, or a single solvent such as methyl 3-methoxypropionate, 2 or more kinds mixed solvent such like.

  As a method of dissolving and removing, these solvents can be used alone or two or more kinds of mixed solvents can be used. Further, the processing method is not limited to the above-described method, and for example, a dip method can be used.

As described above, a film such as plasma SiO (P-SiO), plasma SiN (P-SiN), or plasma SiON (P-SiON) is used as the inorganic film placed on the color fill. The inorganic film is formed by using a plasma CVD (Chemical Vapor Deposition) method. In the case of forming a P—SiO film, SiH ₄ , N ₂ O, and N ₂ can be used as gas species. In the case of forming a P-SiN film, SiH ₄ , NH ₃ , and N ₂ can be used as gas species. The refractive index of the inorganic film formed at this time is about 1.45 for P-SiO and about 1.90 for P-SiN.

For the on-chip microlens of the solid-state imaging device, generally, a polystyrene resin, an acrylic resin, a novolac resin, or a polymerization resin thereof is used. The refractive index of these materials is about 1,48 to 1.62. In addition, no organic material resin other than those resins has a refractive index exceeding 1.9 (excluding materials in which metal oxide fine particles are dispersed and added in the resin). For this reason, it is preferable that the refractive index of the inorganic film placed on the color filter is equivalent to that of the on-chip microlens because interface reflection is reduced. At that time, a P-SiON film is formed by using SiH ₄ , NH ₃ , N ₂ O, and N ₂ as gas species by the above-described plasma CVD film forming method. The P-SiON film can be adjusted to have a refractive index of approximately 1.45 to 1.90 by changing the gas mixture ratio. As the inorganic film, a P-SiN film that can be combined with the on-chip microlens material may be used.

  The film formation temperature by these plasma CVD methods can be applied under conditions of 250 ° C. or less, preferably 200 ° C. or less. The film thickness may be about 200 nm or less. The inorganic film functions as a stopper in the chemical mechanical polishing (CMP) method when the color filter is smoothed, and can be used for detecting the etching end point in the etch back. Furthermore, the inorganic film is effective for preventing fading of the color filter upon light irradiation and preventing a dye diffusion phenomenon between adjacent color filter components. In particular, the light resistance of the dye-containing color filter can be improved.

  As the CMP conditions for the color filter, for example, the following conditions are suitable. The pH of the slurry liquid is 7 to 14, the slurry abrasive grain size is 100 nm or less, and the slurry abrasive grain concentration is 5 wt% or less. The polishing pad type is, for example, continuously foamed urethane resin, the polishing pressure is 5 psi or less, and the rotation speed of the polishing head and the polishing pad is 150 rpm or less. These conditions are appropriately optimized and implemented. In this case, as described above, the inorganic film works as a stopper function and is suitable.

  41 to 43, when an inorganic film, for example, a SiON film having a film thickness of 100 nm, for example, is formed at a film formation temperature of 180 ° C. on a color filter by a low temperature plasma CVD film forming method, each green filter, red filter, blue The light resistance improvement data (spectral characteristics) of the filter are shown. The green filter, red filter, and blue filter are all cases in which a dye is used as a pigment. 41 to 43, a thick solid line A is an initial value, a broken line B is an inorganic film, and a thin solid line C is an inorganic film. In any case, when an inorganic film is provided, an improvement in light resistance is observed.

  Table 1 shows the evaluation results of red, green, and blue with and without an inorganic film. As evaluation conditions, xenon light approximate to sunlight was used, and light irradiation of 2 million lx · hr (lux · time) was used. The evaluation result was expressed as a spectral average change amount (an average value of the spectral change absolute values). In this evaluation, an optical filter that cuts light of 380 nm or less was used, and the sample was irradiated with light that passed through the filter.

The unit of Table 1 is%. In the case of having the inorganic film of the broken line B in Table 1 and the case of not having the inorganic film of the thin solid line C, the spectral change between wavelengths of 400 nm to 700 nm with respect to the initial value of the thick solid line A for each condition. It shows the average value of absolute values (spectral average change amount). As can be seen from Table 1, when the inorganic film (SiON film) is formed on each color filter, the average rate of change is improved as compared with the case where it is not formed. Although not shown in the figures and tables, an inorganic film such as a 100 nm-thickness SiO ₂ film or a SiN film is formed on the color filter at a deposition temperature of 180 ° C. by a low temperature plasma CVD film forming method. The same effect was confirmed.

  The present invention can be applied to either a front-illuminated solid-state imaging device or a back-illuminated solid-state imaging device that includes the color filter 1 or 21 described above. For example, in the case of a CMOS solid-state imaging device, it can be applied to a front side irradiation type in which light is incident from the multilayer wiring layer side and a back side irradiation type in which light is incident from the back surface of the substrate opposite to the multilayer wiring layer. In particular, in a back-illuminated solid-state imaging device, there is substantially no peripheral circuit or the like having a step higher in the vertical direction than the pixel region surface other than the imaging region, and therefore CMP is used for smoothing the color filter according to the embodiment of the present invention. In this case, it is more preferable.

A configuration applicable to the eighth, ninth, tenth, and eleventh embodiments will be described.
When the green filter component is formed in the first color by dry etching, the green filter component material on the alignment mark is removed in advance in order to improve the alignment accuracy, and then the pixel region portion is precisely aligned. The red filter component and the blue filter component formed thereafter are basically formed by self-alignment with the green filter component. This application is the same for the other embodiments.
More specifically, although not shown, the green filter component material film 11Gm above the alignment mark is removed in advance in order to improve the positional accuracy of the resist mask formed when patterning the green filter component material, that is, the alignment accuracy. deep. Alternatively, after the green filter component material film 11Gm is formed, the green filter component material film 11Gm above the alignment mark is removed through a resist mask. Alternatively, a material containing a photosensitive component may be used, exposed to the green filter through an optical mask, and developed to remove the green filter component material film 11Gm on the upper portion of the mark. The positional accuracy of the green filter component material film 11Gm above the alignment mark may be coarser than the positional accuracy in the imaging region. The alignment mark is formed on a scribe line of the substrate 5 or the like.

<Fifteenth embodiment>
[Configuration example of electronic equipment]
The solid-state imaging device according to the present invention can be applied to electronic devices such as a camera equipped with a solid-state imaging device, a portable device with a camera, and other devices equipped with a solid-state imaging device.
FIG. 40 shows an embodiment applied to a camera as an example of the electronic apparatus of the present invention. The camera 71 according to the present embodiment includes an optical system (optical lens) 72, a solid-state imaging device 73, and a signal processing circuit 74. As the solid-state imaging device 73, a solid-state imaging device including any of the color filters described above is applied. The optical system 72 forms image light (incident light) from the subject on the imaging surface of the solid-state imaging device 73. Thereby, signal charges are accumulated in the photoelectric conversion element of the solid-state imaging device 73 for a certain period. The signal processing circuit 74 performs various signal processing on the output signal of the solid-state imaging device 73 and outputs it. The camera 71 according to the present embodiment includes a camera module in which an optical system 72, a solid-state imaging device 73, and a signal processing circuit 74 are modularized.

The present invention can constitute the camera of FIG. 40 or a mobile device with a camera such as a mobile phone provided with a camera module.
Furthermore, the configuration of FIG. 40 can be configured as a module having an imaging function in which the optical system 72, the solid-state imaging device 73, and the signal processing circuit 74 are modularized, a so-called imaging function module. The present invention can constitute an electronic apparatus provided with such an imaging function module.

  According to the electronic apparatus according to the present embodiment, the color filter of the solid-state imaging device is formed with high accuracy, and color mixing in the solid-state imaging device can be suppressed, sensitivity characteristics can be improved, and luminance shading can be suppressed. Can be obtained, and a high-performance electronic device can be provided.

  1, 2, 23, 26, 28, 31, 37, 47, 54, 68 .. color filter, 2R, 2G, 2B .. red, green, blue filter component, 6 .. hard mask, 7, 14, 17 ..Resist mask, 11R, 11G, 11B ..Red, green and blue filter component materials, 71 ..Camera

Claims (10)

Forming a hard mask having an opening on the surface of an imaging region in which a plurality of pixels having photoelectric conversion elements are arranged; and
In the opening of the hard mask, and forming a first color filter component or the second color filter components and the third-color-th filter component, one of,
Forming a remaining color filter component in the opening formed by removing the hard mask;
A method of manufacturing a solid-state imaging device, wherein a periphery of each of the second color filter component and the third color filter component forms a color filter surrounded by the first color filter component. The method for manufacturing a solid-state imaging device according to claim 1, wherein four corners of the first color filter components adjacent to each other are in contact with each other to form a continuous first color filter component. After forming the first color filter component, removing the hard mask to form the second and third openings,
Forming a resist mask having openings smaller than the areas of the second and third openings, respectively;
The method of manufacturing a solid-state imaging device according to claim 1, further comprising a step of removing the hard mask under the opening of the resist mask by isotropic dry etching. In the step of forming the remaining color filter component,
Forming an inorganic film over the entire surface from the surface of the existing color filter component to the inner surface of the opening after removing the hard mask;
Forming the remaining color filter component to be embedded in the opening;
Smoothing the remaining color filter components up to the inorganic film on the surface of the existing color filter components;
4. The method for manufacturing a solid-state imaging device according to claim 1, wherein the inorganic film is finally left on a surface of the existing color filter component and a boundary between adjacent different color filter components. 5. In the step of forming the remaining color filter component,
Forming an inorganic film over the entire surface from the surface of the existing color filter component to the inner surface of the opening after removing the hard mask;
Removing the inorganic film on the surface of the existing color filter component and the inorganic film on the bottom surface of the opening;
Forming the remaining color filter component to be embedded in the opening;
Smoothing the remaining color filter component up to the inorganic film on the surface of the existing color filter component,
Furthermore, removing the inorganic film on the side wall of the opening to form an air gap at the boundary between adjacent different color filter components;
Forming an inorganic film on the entire surface of the color filter component including the air gap;
The method for manufacturing a solid-state imaging device according to claim 1, wherein an air gap is left at a boundary between different color filter components that are finally adjacent. Between the step of forming a step of forming a hard mask, the first color filter components in the opening or the second color filter components and the third-color-th filter component, one of,
Forming a light-shielding film over the entire surface from the surface of the hard mask to the inner surface of the opening;
Removing the light shielding film on the surface of the hard mask and the bottom surface of the opening, and leaving the light shielding film on the sidewall of the opening;
The manufacturing method of the solid-state imaging device according to any one of claims 1 to 3, wherein the light shielding film is left at a boundary between different color filter components adjacent to each other. In the opening of the hard mask, the first color filter component or the second color filter components and the third-color-th filter component, and forming one of the remaining color in the opening obtained by removing the hard mask, During the process of forming the filter component,
Forming an inorganic film on the front surface of the hard mask and the existing color filter component formed in the opening; and
Forming the opening by removing the hard mask together with the inorganic film so that a part of the hard mask remains on the side wall of the existing color filter component,
4. The method of manufacturing a solid-state imaging device according to claim 1, wherein the inorganic film is finally left, and a light-shielding film by a part of the hard mask is left at a boundary between adjacent different color filter components. When forming the first color filter component, removing the hard mask to form the remaining color filter component,
For the first color, second color, and third color filter component materials, filter component materials that do not contain a photosensitive component in the material solid content are used.
A method for manufacturing a solid-state imaging device according to claim 1 . Forming a first color filter component having an opening formed on a surface of an imaging region in which a plurality of pixels having photoelectric conversion elements are arranged;
Forming an inorganic film over the entire inner surface of the opening from the surface of the first color filter component;
Forming a second color filter component and a third color filter component, each of which is selectively surrounded by the first color filter component in the opening,
Smoothing the second color filter and the third color filter component to the inorganic film on the surface of the first color filter component. Forming a first color filter component material film having an inorganic film on the surface of an imaging region in which a plurality of pixels having photoelectric conversion elements are arranged; and
Forming an opening in the first color filter component material film together with the inorganic film, and forming a first color filter component with the remaining first color filter component material film;
Forming a second color filter component and a third color filter component, each of which is selectively surrounded by the first color filter component in the opening,
Smoothing the second color filter component and the third color filter component to the inorganic film on the surface of the first color filter component. A method for manufacturing a solid-state imaging device.

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