JP2006163316A - Method for manufacturing color filter array - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent the degradation in arrangement accuracy of filters of respective colors with respect to pixels when alignment of masks is performed for every color in patterning of a color filter array of a solid state imaging element. <P>SOLUTION: Apertures are provided in the positions meeting B pixels and R pixels as the patterns to connect the G filters 36 formed on the G pixels lining up in a diagonal line direction at a pixel corner. The B filter film is selectively applied to the aperture (process 50d). An exposure process 50e is performed by using a photomask to generate a boundary between a photoirradiation region and a light shielding region on the G filter 36 in the surroundings of the aperture in the position corresponding to the B pixel and while the B filter film 62b is solidified, the B filter film 62r is removed by a developing process 50f and the B filter 38 defined in the shape by the aperture is formed. The R filter film is selectively applied to the aperture after the B filter film 62r, and the R filter 40 defined in the shape by the aperture is formed similarly to the B filter 38. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a method for manufacturing a color filter array in which a plurality of types of filters having different transmission colors are arranged on two-dimensionally arranged optical elements, and more particularly to improvement in positional accuracy between the filters.

  As a solid-state image sensor used in an imaging apparatus such as a digital camera or a video camera, an element in which a mosaic color filter array composed of a plurality of types of transmitted colors is arranged on the surface of each light receiving pixel of an imaging unit is used. Each transmissive color filter is formed using a photosensitive resin material colored with a pigment after forming an imaging portion or the like on a semiconductor substrate. That is, the color filter array is manufactured by repeating a process of applying and patterning a photosensitive resin material for each of a plurality of transmission colors constituting the color filter array.

  Conventionally, after a photosensitive resin material having a certain transmission color is applied so as to cover a semiconductor substrate, the photosensitive resin material is exposed using a photomask, and a development process is performed on the pixel corresponding to the transmission color. The filter of the transmission color is formed by a process of selectively solidifying the photosensitive resin material and removing the photosensitive resin material in other portions.

  FIG. 7 is a schematic diagram illustrating each process of the conventional color filter array manufacturing method. FIG. 7 is a vertical sectional view of the imaging unit of the solid-state imaging device, and shows an example of a mosaic filter array including filters of three primary colors of RGB (red, green, blue). In the manufacturing process shown in this figure, a process 2a for applying a G filter film whose transmission color is green (G), a process 2b for exposing and developing the G filter film, and a transmission color is blue (B). Step 2c for applying the B filter film, Step 2d for exposing and developing the B filter film, Step 2e for applying the R filter film whose transmission color is red (R), Step 2f for exposing and developing the R filter film Are performed in order.

  In step 2a, a G filter film is applied so as to cover the surface of the imaging unit formed on the semiconductor substrate 4, and a G filter film 6 is formed. Here, a light transmission layer 8 made of a passivation film or a planarizing film is laminated on the semiconductor substrate 4, and a wiring 10 is formed in the middle of the layer. The wiring 10 is disposed on an element isolation region between pixels.

  In the subsequent exposure / development step 2b, a photomask is disposed on the G filter film 6, exposed by light passing therethrough, and developed with a developer. The photomask is formed on the semiconductor substrate so that a pattern having a shape corresponding to the pixel is formed, and the edge of an image obtained by projecting the pattern onto the semiconductor substrate, that is, the boundary between the light irradiation region and the light shielding region coincides with the pixel boundary. The eyes are matched. For example, in FIG. 7, the pattern edges are aligned along the wiring 10. For example, when the filter is formed of a negative photosensitive resin material, a portion where the filter film is left is set as a light irradiation region and is solidified by exposure, while the light shielding region is not solidified and the filter film is removed by development. In this way, the G filter 12 is formed on the pixel corresponding to G (G pixel) by development.

  Next, a B filter is formed. In the applying step 2c, the B filter film is applied, and the B filter film 14 is formed so as to cover the semiconductor substrate 4 including the G filter 12 formed previously. In the subsequent exposure and development step 2d, the B filter film 14 is exposed and developed in the same manner as in step 2b for G. At this time, the photomask is aligned with the semiconductor substrate so that the exposure pattern matches the boundary of the pixel corresponding to B (B pixel). As a result, after development, the B filter film 14 remains on the B pixel, and the B filter 16 is formed. On the other hand, the B filter film 14 on the G filter 12 and the pixel corresponding to R (R pixel) is removed.

  Finally, an R filter is formed. In the applying step 2e, the R filter film is applied, and the R filter film 18 is formed so as to cover the semiconductor substrate 4 including the G filter 12 and the B filter 16 previously formed. In the subsequent exposure / development step 2f, the R filter film 18 is exposed and developed in the same manner as in steps 2b and 2d for G and B. At this time, the photomask is aligned with the semiconductor substrate so that the exposure pattern matches the boundary of the R pixel. As a result, after development, the R filter film 18 remains corresponding to the R pixel, and the R filter 20 is formed. On the other hand, the R filter film 18 on the G filter 12 and the B filter 16 is removed.

  The conventional filters 12, 16, and 20 for each color are formed through an independent exposure process using separate photomasks, and the boundaries of the filters are defined by the exposure pattern. Therefore, high overlay accuracy is required when manufacturing a color filter array by sequentially superimposing RGB filters formed in independent exposure processes as described above. In particular, as the pixel size is reduced as in recent years, it becomes difficult to meet the demand. As described above, conventionally, there has been a problem that the filters 12, 16, and 20 are formed at positions shifted from the corresponding pixels due to misalignment in the exposure process. FIG. 8 is a schematic vertical sectional view for explaining this conventional problem. In the example shown in FIG. 8, the G filter 12 is formed at a position corresponding to the G pixel, but the B filter 16 ′ is formed shifted to the left in the figure with respect to the position of the B pixel, while the R filter 20 'Is formed so as to be shifted to the right in the figure with respect to the position of the R pixel. When such a deviation occurs, a portion 22 where adjacent filters of different colors overlap each other is generated, and when light passing through the portion enters the light receiving element, color mixing occurs and the image signal is deteriorated. Further, a gap 24 in which no filter is arranged is formed on the pixel, and the image signal is also deteriorated due to the light incident on the light receiving element from that portion.

  The present invention has been made to solve the above-described problems, and an object of the present invention is to provide a color filter array manufacturing method in which the arrangement accuracy of the filters of each color constituting the color filter array is improved.

  In the color filter array manufacturing method according to the present invention, a plurality of types of light transmission films having different transmission colors are sequentially formed on the surfaces of a plurality of optical elements arranged on a substrate, and the plurality of types of light transmission films are formed. A method of manufacturing a color filter array selectively arranged for each optical element, wherein a pattern of the light transmission film for a part of the transmission color is formed on the optical element corresponding to the transmission color. Forming a mesh-shaped basic filter array that is selectively disposed on each of the optical elements corresponding to the remaining transmitted colors and has openings that are isolated from each other, and the basic filter array A mesh filling step of forming the light transmission film for the remaining transmission color in the opening of the mesh, and the mesh filling step includes the remaining transmission color. An application step of applying a liquid material of the light-transmitting film to the basic filter array and storing it in the opening and selectively leaving the liquid material; and on the optical element corresponding to the transmitted color of the applied liquid material Solidifying step of solidifying the liquid material.

  According to the present invention, the basic filter array is formed by the mesh forming step. The type of transmitted color of the light transmissive film constituting the basic filter array is such that an opening corresponding to the shape of the optical element is formed at the position of the optical element corresponding to the remaining transmitted color in the formed basic filter array. Selected. Furthermore, the light transmission films constituting the basic filter array are patterned in a shape connected to each other so as to surround the remaining optical elements of the transmission color. The light transmission films for the remaining transmission colors are formed in the mesh filling step. At this time, the material for forming the light transmission film is a liquid material, and the liquid material is excluded from the portion where the light transmission film has already been formed as the basic filter array, and is selectively left in the opening. Thereafter, it is solidified to form a light transmission film.

  In another color filter array manufacturing method according to the present invention, the liquid material of the light transmission film is a photosensitive resin material, and the solidifying step surrounds the optical element corresponding to the transmission color of the liquid material. An exposure step of exposing the photosensitive resin material using a photomask that creates a boundary between a light irradiation region and a light shielding region on the basic filter array;

  According to the present invention, exposure using a photomask is performed when the photosensitive resin material that is a liquid material is solidified. Since the shape of the light-transmitting film formed by solidification is defined by the opening, it is sufficient to set the boundary of the exposure pattern of the photomask so as to surround the outside of the opening, and exactly match the shape of the opening. There is no need. Therefore, the alignment accuracy of the photomask is eased.

  In another color filter array manufacturing method according to the present invention, there are a plurality of the remaining transmission colors, and the mesh filling step removes the liquid material on the optical element that has not been solidified in the solidification step. And an additional filling step for performing the coating step and the solidifying step for the other remaining transmission colors after the removing step.

  According to the present invention, the solidifying step selectively solidifies the liquid material on the optical element corresponding to the transmitted color of the applied liquid material when there are a plurality of remaining transmitted colors. Of the remaining transmission colors, the liquid material is removed from the openings corresponding to the transmission colors other than the transmission color of the applied liquid material, and the openings are restored. By sequentially applying and selectively solidifying the corresponding liquid material for each remaining transmission color, a light transmission film having a transmission color corresponding to the position is formed in each opening.

  In another preferred aspect of the present invention, the plurality of optical elements are arranged in a matrix, and the transmission color is a first transmission color in which the same color is arranged in a diagonal direction in the matrix arrangement of the optical elements; The basic filter array includes a second transmission color and a third transmission color disposed between optical elements corresponding to one transmission color, and the basic filter array transmits the light transmission on each optical element corresponding to the first transmission color. It is a color filter array manufacturing method formed by connecting films in the diagonal direction.

  In another preferred aspect of the present invention, the plurality of optical elements are arranged in a matrix, and the transmission colors are arranged in a diagonal direction in the matrix arrangement of the optical elements. And a third transmission color and a fourth transmission color disposed between optical elements corresponding to the first transmission color or the second transmission color, and the basic filter array includes the first transmission color or the In the color filter array manufacturing method, the light transmission films on the optical elements corresponding to the second transmission color are formed to be connected in the diagonal direction.

  In another color filter array manufacturing method according to the present invention, a plurality of types of light transmission films having different transmission colors are sequentially formed on a substrate, and the plurality of types of light transmission films are selectively disposed. A method of manufacturing an array, wherein the light transmissive films for a part of the transmissive colors are patterned and selectively disposed on the substrate, and openings that are isolated from each other corresponding to the remaining transmissive colors are formed. Forming a mesh-shaped basic filter array formed; and mesh filling step of forming the light-transmitting film for the remaining transmission color in the opening of the basic filter array, and In the mesh filling step, the liquid material of the light transmission film for the remaining transmission color is applied to the basic filter array, and is stored in the openings to selectively remain. A coating step, and has a, a solidifying step of selectively solidifying the liquid material of the opening in a position corresponding to the transparent color of the applied the liquid material.

  According to the present invention, the basic filter array is formed by a part of the transmission color filters, and the shape and position of the remaining transmission color filters formed thereafter are defined by the openings of the basic filter array. As a result, the arrangement of the remaining transmission color filters is accurately determined for the filters constituting the basic filter array, and the occurrence of overlap and gaps between adjacent filters is suppressed.

  Hereinafter, embodiments of the present invention (hereinafter referred to as embodiments) will be described with reference to the drawings.

  FIG. 1 is a schematic plan view showing the structure of an image pickup unit of a frame transfer type CCD image sensor to which the color filter array manufacturing method of the present invention is applied. A plurality of CCD shift register channels 30 extending in the column direction (vertical direction) are separated from each other by a channel stop in a region corresponding to the imaging unit on the surface of the semiconductor substrate. On the semiconductor substrate, a plurality of vertical transfer electrodes orthogonal to the channel 30 and arranged in the column direction are formed of a light-transmitting material such as polysilicon, and then a light-shielding metal film is formed thereon. A wiring layer made of, for example, an Al layer is laminated. By patterning this, a clock wiring 32 extending along the channel stop and a light-shielding grid 34 disposed at the boundary portion between the pixels adjacent in the column direction are formed. That is, the imaging unit is divided into a lattice shape by a center line along the column direction of each clock wiring 32 and a center line 35 along the row direction (horizontal direction) of each light shielding grid 34, and corresponds to each lattice. Pixel is located. Incidentally, the clock wiring 32 is electrically connected to the vertical transfer electrode through a contact, and a transfer clock can be applied to the vertical transfer electrode. Further, the light-shielding grid 34 can prevent color mixing caused by oblique incidence of light between light receiving pixels associated with different color filters arranged in the column direction.

  The color filter is formed, for example, after a planarizing film is laminated on the wiring layer described above. FIG. 2 is a schematic plan view showing a pattern of a color filter array formed on the imaging unit shown in FIG. Here, the color filter array is a Bayer arrangement of RGB three primary colors, and R and G or B and G are alternately arranged in each column and each row. For example, in four pixels constituting an arbitrary 2 × 2 pixel array, the G filter 36 is provided on one diagonally arranged pixel, and the B filter 38 and the other diagonally arranged pixel are provided. An R filter 40 is disposed.

    Next, the color filter array manufacturing method according to the present embodiment will be described with reference to FIGS. 3 and 4 are schematic views for explaining each step of the manufacturing method. 3 and 4 show vertical sectional views taken along line A-A 'shown in FIGS. 1 and 2 in each step. In the manufacturing process shown in this figure, a coating process 50a for the G filter film, an exposure process 50b and a development process 50c, a coating process 50d for the B filter film, an exposure process 50e and a development process 50f, a coating process 50g for the R filter film, The exposure process 50h and the development process 50i are performed in order. Of these, FIG. 3 shows steps 50a to 50c, and FIG. 4 shows steps 50d to 50i. Hereinafter, an example in which a negative photosensitive resin material is used for each filter film will be described. However, even if a positive photosensitive resin material is used, if the light transmitting area and the light shielding area of the mask are basically reversed, the same is true. A manufacturing method can be realized.

  In the applying step 50 a, the G filter film is applied so as to cover the surface of the imaging unit formed on the semiconductor substrate 52, thereby forming the G filter film 54. At the time of forming the color filter, a light transmission layer 56 made of a passivation film or a planarizing film is laminated on the semiconductor substrate 52, and the clock wiring is placed in a position on the element isolation region for separating the channels. 32 and a light shielding grid 34 are formed.

  In the exposure step 50b, a photomask 58 is disposed on the G filter film 54, and the G filter film 54 is exposed with light passing therethrough. The photomask 58 for the G filter film, which is a negative photosensitive resin material, has a rectangular basic shape at a position corresponding to the diagonally adjacent B pixel and R pixel, and a pattern in which light shielding regions independent from each other are arranged. Have As the photomask, for example, a transparent substrate made of quartz or the like and a film made of chromium or the like corresponding to the light shielding region is used, but the transparent substrate is omitted in FIGS. Only the members are shown.

  In the developing step 50c, the G filter film 54 that has been shielded from light during exposure and has not been cured is removed by etching with a developer. As a result, the G filter 36 having the pattern shown in FIG. 2 is formed. The G filter 36 is formed in a mesh shape in which openings 60 independent of each other are arranged at positions corresponding to the B pixel and the R pixel. The opening 60 at the position of the B pixel and the R pixel is determined according to the pattern of the light shielding region on the photomask, and is basically formed in a rectangular shape here. In the pattern shown in FIG. 2, the edge of the G filter 36 of each G pixel is placed on the clock wiring 32 or the light shielding grid 34 shown in FIG. 1 to prevent color mixture with adjacent pixels, while the clock wiring 32 and the light shielding. Of the grids defined by the center line 35 of each grid 34, the grid 34 is placed outside the grid corresponding to the G pixel. That is, conventionally, the G filter of each pixel is basically formed in line with or inside the grid. However, in this manufacturing method, the G filter of each pixel is formed larger than the grid. The As a result, the corners of the G filter 36 are connected to each other between the G pixels arranged in the diagonal direction, and an opening 60 surrounded by the G filter 36 is formed at a position corresponding to the B pixel and the R pixel.

  The G filter 36 is formed as described above. Here, in the exposure step 50b, the photomask is aligned with the semiconductor substrate so that the boundary of the G filter 36 is positioned on the clock wiring 32 or the light shielding grid 34 as described above. In this manufacturing method, the G filter 36 arranged corresponding to the G pixel is used as a basic filter array, and the B filter and the R filter described below are formed on the basis of this.

  In the B filter application step 50 d, the B filter film is applied on the surface of the imaging unit formed on the semiconductor substrate 52. Here, the B filter film is applied thinner than the depth of the opening 60 formed by the G filter film 36 and is selectively applied in the opening 60. For example, when the B filter film is applied by spin coating, the B filter film is removed from above the G filter 36 by selecting the viscosity of the B filter film, the rotation speed of the spin coating, etc. The B filter film can be accumulated and remain. In this manner, the B filter film 62 is formed in the opening 60 of the G filter 36 provided at a position corresponding to the B pixel and the R pixel.

  In the exposure step 50e, a photomask 64 is arranged, the B filter film 62 is exposed with light passing therethrough, and the B filter film 62b corresponding to the B pixel is selectively solidified. Here, since the shape of the B filter film 62 is defined by the opening 60, it is sufficient to set the boundary of the pattern of the photomask so as to surround the outside of the opening, and it is necessary to strictly match the shape of the opening 60. There is no. That is, as shown in FIG. 4, the boundary between the light irradiation region and the light shielding region of the photomask 64 can be retreated from the edge of the opening 60 onto the G filter 36, and the retreat amount is the eye of the photomask 64. It is a margin for alignment.

  In the developing step 50f, the B filter film 62r at the R pixel position that is shielded from light and not cured at the time of exposure is removed by etching with a developer. As a result, the B filter 38 having the pattern shown in FIG. 2 is formed. The opening 60 is restored at the position of the R pixel by removing the B filter film 62r by etching.

  Next, in the R filter film application step 50 g, the R filter film is applied on the surface of the imaging unit formed on the semiconductor substrate 52. Here, the R filter film is applied to be thinner than the depth of the opening 60 as in the case of the B filter film described above, and is basically selectively applied to the remaining opening 60. In this way, the R filter film 66 is formed in the opening 60 of the G filter 36 provided at the position corresponding to the R pixel.

  In the exposure step 50h, a photomask 68 is disposed, the R filter film 66 is exposed with light passing through it, and the R filter film 66 corresponding to the R pixel is selectively solidified. Here, since the shape of the R filter film 66 is defined by the opening 60 similarly to the B filter film 62, it is sufficient to set the boundary of the photomask pattern so as to surround the outside of the opening. There is no need to match the shape of the opening 60. That is, as shown in FIG. 4, the boundary between the light irradiation region and the light shielding region of the photomask 68 can be retreated from the edge of the opening 60 onto the G filter 36, and the retreat amount is the eye of the photomask 68. It is a margin for alignment.

  In the developing step 50i, the R filter film 66 that is shielded from light and not cured at the time of exposure is removed by etching with a developer. Thereby, for example, the R filter film accumulated in the concave portion other than the opening 60 corresponding to the R pixel is removed, and the R filter 40 having the pattern shown in FIG. 2 is formed.

  FIG. 5 is a schematic plan view showing another pattern of the RGB color filter array of the CCD image sensor manufactured by this manufacturing method. Also in this pattern, the mesh-shaped G filter 80 is first formed of the G filter film by the steps 50a to 50c, and then the openings are filled with the B filter film and the R filter film by the steps 50d to 50i. A filter 84 is formed. In this pattern, the edge of the filter of each color is basically arranged along the above-described lattice (center line 35), but the G filter 80 is arranged between the G pixels arranged in the diagonal direction at the corner of the G filter. A bridging portion 86 is provided to connect the two. The G filter 80 is connected in a mesh shape by the bridging portion 86, and an opening surrounding the position corresponding to the B pixel and the R pixel is formed. Using this opening, a B filter and an R filter are formed as described above.

  FIG. 6 is a schematic plan view showing a pattern of another color filter array of the CCD image sensor manufactured by this manufacturing method. This color filter array is composed of a mosaic arrangement of four color filters. Here, an example composed of four colors of cyan (C), magenta (M), yellow (Y), and green (G) will be described. In this pattern, for example, the G filter 90 having a rectangular pattern larger than the above-described grid is formed at the position of the G pixel, and the C filter 92 having a rectangular pattern larger than the grid is also formed at the position of the C pixel arranged in the diagonal direction. To do. The patterning of the G filter and the C filter is performed, for example, by aligning the photomask with reference to the clock wiring 32 and the light shielding grid 34 as in the conventional case. Since the G filter 90 and the C filter 92 are formed larger than the lattice, they overlap each other at the corners, and form openings at the positions of the remaining Y pixels and M pixels. That is, the G filter 90 and the C filter 92 form a mesh-shaped basic filter array. Thereafter, for example, the Y filter 94 can be formed in the opening as in the steps 50d to 50f, and the M filter 96 can be formed in the opening as in the steps 50g to 50i.

  Although an embodiment relating to a color filter array mounted on a solid-state imaging device has been described here, the present invention can also be applied to manufacture of a color filter array in another device such as a liquid crystal display device.

It is a typical top view which shows the structure of the imaging part of a frame transfer type CCD image sensor. It is a typical top view which shows an example of the pattern of the 3 primary color mosaic filter which concerns on embodiment. It is a schematic diagram explaining each process of the color filter array manufacturing method which concerns on embodiment. It is a schematic diagram explaining each process of the color filter array manufacturing method which concerns on embodiment. It is a typical top view which shows the example of the other pattern of the 3 primary color mosaic filter which concerns on embodiment. It is a typical top view which shows an example of the pattern of the 4-color mosaic filter which concerns on embodiment. It is a schematic diagram explaining each process of the conventional color filter array manufacturing method. It is a typical vertical sectional view for explaining a conventional problem.

Explanation of symbols

  30 channels, 32 clock lines, 34 shading grid, 36, 80, 90 G filter, 38, 82 B filter, 40, 84 R filter, 52 semiconductor substrate, 54 G filter film, 56 light transmission layer, 58, 64, 68 Photomask, 60 openings, 62 B filter film, 66 R filter film, 86 bridging part, 92 C filter, 94 Y filter, 96 M filter.

Claims (6)

A plurality of types of light transmission films having different transmission colors are sequentially formed on the surfaces of a plurality of optical elements arranged on the substrate, and the plurality of types of light transmission films are selectively arranged for each optical element. A method of manufacturing a color filter array comprising:
Patterning the light-transmitting film for some of the transmitted colors and selectively disposing the light-transmitting film on the optical elements corresponding to the transmitted colors, and on each of the optical elements corresponding to the remaining transmitted colors A mesh forming step of forming a mesh-shaped basic filter array in which openings isolated from each other are formed;
A mesh filling step of forming the light transmissive film for the remaining transmitted color in the opening of the basic filter array;
Have
The mesh filling step includes
Applying the liquid material of the light-transmitting film for the remaining transmitted color to the basic filter array and storing it in the opening to selectively leave it;
A solidifying step of solidifying the liquid material on the optical element corresponding to the transmitted color of the applied liquid material;
A method for producing a color filter array, comprising: The color filter array manufacturing method according to claim 1,
The liquid material of the light transmission film is a photosensitive resin material,
In the solidifying step, the photosensitive resin material is exposed using a photomask that creates a boundary between a light irradiation region and a light shielding region on the basic filter array surrounding the optical element corresponding to the transmitted color of the liquid material. Having an exposure step to
A color filter array manufacturing method characterized by the above. In the color filter array manufacturing method according to claim 1 or 2,
There are a plurality of the remaining transparent colors,
The mesh filling step includes
A removing step of removing the liquid material on the optical element that has not been solidified in the solidifying step;
After the removing step, an additional filling step for performing the coating step and the solidifying step for the other remaining transmission colors;
A method for producing a color filter array, comprising: In the color filter array manufacturing method according to claim 3,
The plurality of optical elements are arranged in a matrix,
The transmission color includes a first transmission color arranged in a diagonal direction in the matrix arrangement of the optical elements, and a second transmission color and a third transmission color arranged between the optical elements corresponding to the first transmission color. Including
The basic filter array is formed by connecting the light transmission films on the optical elements corresponding to the first transmission color in the diagonal direction;
A color filter array manufacturing method characterized by the above. In the color filter array manufacturing method according to claim 3,
The plurality of optical elements are arranged in a matrix,
The transmission color is arranged between the first transmission color and the second transmission color arranged in a diagonal direction in the matrix arrangement of the optical elements and the optical element corresponding to the first transmission color or the second transmission color. A third transmission color and a fourth transmission color.
The basic filter array is formed by connecting the light transmission films on the optical elements corresponding to the first transmission color or the second transmission color in the diagonal direction;
A color filter array manufacturing method characterized by the above. A method of manufacturing a color filter array in which a plurality of types of light transmission films having different transmission colors are sequentially formed on a substrate, and the plurality of types of light transmission films are selectively disposed,
A mesh-shaped basic filter array in which the light-transmitting films for some of the transmitted colors are patterned and selectively disposed on the substrate, and openings that are isolated from each other are formed corresponding to the remaining transmitted colors Forming a mesh; and
A mesh filling step of forming the light transmissive film for the remaining transmitted color in the opening of the basic filter array;
Have
The mesh filling step includes
Applying the liquid material of the light-transmitting film for the remaining transmitted color to the basic filter array and storing it in the opening to selectively leave it;
A solidification step of selectively solidifying the liquid material in the opening at a position corresponding to the transmitted color of the applied liquid material;
A method for producing a color filter array, comprising:

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