JP2009003329A - Photomask for on-chip color filter and method for manufacturing on-chip color filter using same - Google Patents
Photomask for on-chip color filter and method for manufacturing on-chip color filter using same Download PDFInfo
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Abstract
Description
本発明は、固体撮像素子の光電変換素子に対応した着色フィルタをフォトリソグラフィー法にて作製するために使用するオンチップカラーフィルタ用フォトマスク及びそれを用いたオンチップカラーフィルタの製造方法に関し、特に、四角形状の第１色フィルタ用パターンの４隅が接する連結部に透過率制御領域を設けたオンチップカラーフィルタ用フォトマスクに関する。 The present invention relates to a photomask for an on-chip color filter used for producing a colored filter corresponding to a photoelectric conversion element of a solid-state imaging element by a photolithography method, and particularly to a method for manufacturing an on-chip color filter using the same. The present invention also relates to a photomask for on-chip color filter in which a transmittance control region is provided at a connecting portion where four corners of a rectangular first color filter pattern are in contact.
固体撮像素子の光電変換素子に対応したブルー、グリーン、レッド等の着色フィルタは、パターン精度及びパターン再現性の点から、通常、フォトリソグラフィー法にて作製されるのが一般的で、図１３（ａ）〜（ｆ）に示すような工程で作製される。
ここに示すカラーフィルタは、カラー固体撮像素子等に用いられるカラーフィルタの構成事例で、個々の着色フィルタ間にブラックマトリクスを設けない場合の事例である。
From the viewpoint of pattern accuracy and pattern reproducibility, colored filters such as blue, green, and red corresponding to photoelectric conversion elements of solid-state imaging elements are generally manufactured by a photolithography method. It is produced by the steps as shown in a) to (f).
The color filter shown here is an example of a configuration of a color filter used in a color solid-state imaging device or the like, and is an example in which a black matrix is not provided between individual colored filters.
まず、アクリル系の感光性樹脂に緑色顔料を分散した緑色感光性樹脂溶液を光電変換素子及び平坦化層が形成された半導体基板１１上にスピンナー等を用いて塗布し、緑色感光層２４を形成する（図１３（ａ）参照）。
さらに、所定のフォトマスクを使ってパターン露光し、現像、ポストベーク等の一連のパターニング処理を行って、緑色フィルタ２４Ｇを形成する（図１３（ｂ）参照）。
First, a green photosensitive resin solution in which a green pigment is dispersed in an acrylic photosensitive resin is applied onto a semiconductor substrate 11 on which a photoelectric conversion element and a planarizing layer are formed using a spinner or the like, thereby forming a green photosensitive layer 24. (See FIG. 13A).
Further, pattern exposure is performed using a predetermined photomask, and a series of patterning processes such as development and post-baking are performed to form a green filter 24G (see FIG. 13B).
次に、アクリル系の感光性樹脂に青色顔料を分散した青色感光性樹脂溶液を緑色フィルタ２４Ｇが形成された半導体基板１１上にスピンナー等を用いて塗布し、青色感光層２５を形成する（図１３（ｃ）参照）。 Next, a blue photosensitive resin solution in which a blue pigment is dispersed in an acrylic photosensitive resin is applied onto the semiconductor substrate 11 on which the green filter 24G is formed by using a spinner or the like to form a blue photosensitive layer 25 (FIG. 13 (c)).
次に、所定のフォトマスクを使ってパターン露光し、現像、ポストベーク等の一連のパターニング処理を行って、青色フィルタ２５Ｂを形成する（図１３（ｄ）参照）。 Next, pattern exposure is performed using a predetermined photomask, and a series of patterning processes such as development and post-baking are performed to form a blue filter 25B (see FIG. 13D).
次に、アクリル系の感光性樹脂に赤色顔料を分散した赤色感光性樹脂溶液を緑色フィルタ２４Ｇ及び青色フィルタ２５Ｂが形成された半導体基板上１１にスピンナー等を用いて塗布し、赤色感光層２６を形成する（図１３（ｅ）参照）。 Next, a red photosensitive resin solution in which a red pigment is dispersed in an acrylic photosensitive resin is applied to the semiconductor substrate 11 on which the green filter 24G and the blue filter 25B are formed using a spinner or the like, and the red photosensitive layer 26 is applied. It forms (refer FIG.13 (e)).
次に、所定のフォトマスクを使ってパターン露光し、現像、ポストベーク等の一連のパターニング処理を行って、赤色フィルタ２６Ｒを形成する（図１３（ｆ）参照）。 Next, pattern exposure is performed using a predetermined photomask, and a series of patterning processes such as development and post-baking are performed to form a red filter 26R (see FIG. 13F).
以上の工程で固体撮像素子基板上１１上に緑色フィルタ２４Ｇ、青色フィルタ２５Ｂ、赤色フィルタ２６Ｒのオンチップカラーフィルタ作製することができる。
ここで、上記オンチップカラーフィルタの平面視でのカラーフィルタ配列の一例を図４に示す。
このカラーフィルタ配列では、例えば、四角形状の青色フィルタＢの４辺に接するように市松模様状に四角形状の緑色フィルタＧが、四角形状の赤色フィルタＲの４辺に接するように市松模様状に四角形状の緑色フィルタＧが配置さている。
The on-chip color filters of the green filter 24G, the blue filter 25B, and the red filter 26R can be manufactured on the solid-state image pickup device substrate 11 through the above steps.
Here, FIG. 4 shows an example of the color filter array in plan view of the on-chip color filter.
In this color filter array, for example, a square green filter G is in a checkered pattern so as to be in contact with the four sides of the quadrangular blue filter B, and a checkered pattern is in contact with the four sides of the quadrilateral red filter R. A square green filter G is arranged.
ここで、図４のカラーフィルタ配列で、２行、３列の青色フィルタＢ周辺のカラーフィルタ配列を部分的に取り出したのが図９である。
四角形状の青色フィルタＢの４辺に接するように市松模様状に四角形状の緑色フィルタＧが配列されており、青色フィルタＢの対角に赤色フィルタＲが配列されている。
Here, FIG. 9 is a partial extraction of the color filter array around the blue filter B of 2 rows and 3 columns in the color filter array of FIG.
A square green filter G is arranged in a checkered pattern so as to be in contact with four sides of the square blue filter B, and a red filter R is arranged diagonally to the blue filter B.
上記の製造方法で、単純に平面視で市松模様とした四角形状のパターンを有するフォトマスクで作製した緑色フィルタ２４Ｇ、青色フィルタ２５Ｂ、赤色フィルタ２６Ｒ等のオンチップカラーフィルタは、図１０に示すように、各緑色フィルタ２４Ｇ、青色フィルタ２５Ｂ、赤色フィルタ２６Ｒのコーナー部に隙間が発生する。
この隙間が発生したカラー固体撮像素子では、この隙間から白色光が入り込んで、Ａｌ電極に反射してノイズとなり、カラー固体撮像素子の色再現性に支障をきたす。
The on-chip color filters such as the green filter 24G, the blue filter 25B, and the red filter 26R manufactured by the above-described manufacturing method using a photomask having a rectangular pattern that is simply a checkered pattern in plan view are as shown in FIG. In addition, a gap is generated at the corner of each green filter 24G, blue filter 25B, and red filter 26R.
In the color solid-state imaging device in which the gap is generated, white light enters from the gap and is reflected on the Al electrode to become noise, which hinders the color reproducibility of the color solid-state imaging device.
そこで、緑色フィルタ２４Ｇを作製する時、図１１に示すような、緑色フィルタ用フォトマスク使用する。
緑色フィルタ用フォトマスクは、緑色フィルタ用パターンＧＰの四隅をｄ1幅のブリッジで連結したものである。なお、図中の白抜け部が光透過部であり網点部は遮光部である。このブリッジの幅ｄ1は、通常０．０５〜０．３μｍである。
緑色フィルタ用パターンＧＰの四隅をｄ1幅のブリッジで連結した緑色フィルタ用フォトマスクを用いて、緑色フィルタ２４Ｇを作製し、青色フィルタ２５Ｂ、赤色フィルタ２６Ｒを作製したオンチップカラーフィルタの一例を図１２に示す。
このように、青色フィルタ２５Ｂ及び赤色フィルタ２６Ｒの四隅のコーナー部は緑色フィルタ２４Ｇの四隅のブリッジ部で埋められた形になり、隙間は発生しない。
Therefore, when producing the green filter 24G, a green filter photomask as shown in FIG. 11 is used.
The green filter photomask is obtained by connecting the four corners of the green filter pattern GP with a d 1 width bridge. In the figure, a white portion is a light transmitting portion, and a halftone portion is a light shielding portion. The width d 1 of this bridge is usually 0.05 to 0.3 μm.
An example of an on-chip color filter in which a green filter 24G is manufactured using a green filter photomask in which four corners of a green filter pattern GP are connected by a d 1 width bridge, and a blue filter 25B and a red filter 26R are manufactured. 12 shows.
As described above, the corners at the four corners of the blue filter 25B and the red filter 26R are filled with the bridge portions at the four corners of the green filter 24G, and no gap is generated.
上記のようなカラー画素の四隅をブリッジ状に繋げた構造にすることにより、剥がれに強いカラーフィルタを得ることができるカラーフィルタ構造が提案されている（例えば、特許文献１参照）。
このようにカラー画素の四隅をブリッジ状に繋げた構造とすることにより、剥がれに強いカラーフィルタを得ることができるが、カラーフィルタ間の隙間を埋める効果も有する。
There has been proposed a color filter structure that can obtain a color filter that is resistant to peeling by using a structure in which the four corners of the color pixel are connected in a bridge shape (see, for example, Patent Document 1).
In this way, a structure in which the four corners of the color pixels are connected in a bridge shape can provide a color filter that is resistant to peeling, but also has an effect of filling a gap between the color filters.
しかしながら、画素サイズの微小化により平面視で３μｍ以下の着色フィルタを形成する際、緑色フィルタ用パターンＧＰの四隅が０．０５〜０．３μｍ幅のブリッジで連結された緑色フィルタ用フォトマスクを用いて、緑色フィルタ２４Ｇを作製すると、緑色フィルタ用パターンＧＰのブリッジ幅が０．０５〜０．１μｍでは、形成された緑色フィルタのブリッジ寸法が太り、カラー固体撮像素子の感度が劣化するという問題が生じていた。また、緑色フィルタ用パターンＧＰのブリッジ幅が０．１５〜０．３μｍでは、形成された緑色フィルタのブリッジ寸法が細り、ブリッジが断線状態になるという問題が生じていた。
本発明は、上記問題点に鑑み考案されたもので、固体撮像素子の光電変換素子に対応した着色フィルタをフォトリソグラフィー法にて作製するにあたり、第２色（例えば、青色）フィルタ及び第３色（例えば、赤色）フィルタの開口（画素）領域を最大限に確保できるオンチップカラーフィルタ用フォトマスク及びそれを用いたオンチップカラーフィルタの製造方法を提供することを目的とする。 The present invention has been devised in view of the above problems, and in producing a colored filter corresponding to a photoelectric conversion element of a solid-state imaging device by a photolithography method, a second color (for example, blue) filter and a third color are provided. An object of the present invention is to provide a photomask for an on-chip color filter that can ensure the maximum opening (pixel) area of a (for example, red) filter and a method for manufacturing an on-chip color filter using the photomask.
本発明に於いて上記課題を達成するために、まず請求項１においては、固体撮像素子の光電変換素子に対応した各々平面視四角形状の着色フィルタをフォトリソグラフィー法にて各色毎に作製するために使用するフォトマスクであって、
前記フォトマスクは、第２色、もしくは第３色フィルタの４辺に接するように市松模様状に配置された第１色フィルタを作製するための第１色フィルタ用フォトマスクであって、
前記第１色フィルタに対応するように配置された四角形状の第１色フィルタ用パターンの４隅が接する連結部に透過率制御領域を設けたことを特徴とするオンチップカラーフィルタ用フォトマスクとしたものである。
In order to achieve the above-mentioned object in the present invention, first, in claim 1, each colored filter having a square shape in plan view corresponding to the photoelectric conversion element of the solid-state imaging element is produced for each color by photolithography. A photomask used for
The photomask is a first color filter photomask for producing a first color filter arranged in a checkered pattern so as to be in contact with the second color or the four sides of the third color filter,
An on-chip color filter photomask, wherein a transmittance control region is provided at a connecting portion where four corners of a rectangular first color filter pattern arranged so as to correspond to the first color filter are in contact with each other; It is a thing.
また、請求項２においては、前記透過率制御領域の透過率が、光透過部の２０〜７０％であることを特徴とする請求項１に記載のオンチップカラーフィルタ用フォトマスクとしたものである。 The on-chip color filter photomask according to claim 1, wherein the transmittance of the transmittance control region is 20 to 70% of the light transmitting portion. is there.
また、請求項３においては、請求項１または２に記載の固体撮像素子カラーフィルタ用フォトマスクを用いて作製したことを特徴とするオンチップカラーフィルタの製造方法としたものである。 According to a third aspect of the present invention, there is provided an on-chip color filter manufacturing method characterized by being manufactured using the photomask for a solid-state image sensor color filter according to the first or second aspect.
また、請求項４においては、前記固体撮像素子カラーフィルタの第１色フィルタの４隅の連結部の膜厚が、第１色フィルタ中央部の膜厚の１０％〜９０％であることを特徴とする請求項３記載のオンチップカラーフィルタの製造方法としたものである。 According to a fourth aspect of the present invention, the thickness of the connecting portion at the four corners of the first color filter of the solid-state image sensor color filter is 10% to 90% of the thickness of the central portion of the first color filter. The on-chip color filter manufacturing method according to claim 3.
本発明のオンチップカラーフィルタ用フォトマスク及びオンチップカラーフィルタ用フォトマスクを用いた固体撮像素子カラーフィルタの製造方法では、オンチップカラーフィルタ用フォトマスクを用いて第１色カラーフィルタを作製するため、第２色、第３色カラーフィルタ寸法を均一に作製することができ、第１色フィルタと第２色フィルタとの間、第１色フィルタと第３色フィルタとの間で隙間が発生せず、感度特性に優れた固体撮像素子を得ることができる。 In the on-chip color filter photomask and the solid-state image sensor color filter manufacturing method using the on-chip color filter photomask according to the present invention, the first color filter is produced using the on-chip color filter photomask. The second color and third color filter dimensions can be made uniform, and a gap is generated between the first color filter and the second color filter and between the first color filter and the third color filter. Therefore, a solid-state imaging device having excellent sensitivity characteristics can be obtained.
以下、本発明の実施の形態につき説明する。
図１は、本発明のオンチップカラーフィルタ用フォトマスクの一実施例を示す部分模式平面図である。
本発明のオンチップカラーフィルタ用フォトマスク３０は、第１色（例えば、緑色）カラーフィルタ形成用の透過パターン３１と、第１色（例えば、緑色）カラーフィルタ形成用の透過パターン３１の四隅の連結部に透過率制御領域３２と、遮光パターン３３とで構成されており、カラーフィルタ形成用の着色レジストとしてネガタイプのレジストを使用した場合の事例である。
Hereinafter, embodiments of the present invention will be described.
FIG. 1 is a partial schematic plan view showing an embodiment of a photomask for an on-chip color filter of the present invention.
The on-chip color filter photomask 30 of the present invention includes a transmissive pattern 31 for forming a first color (for example, green) color filter and a transmissive pattern 31 for forming a first color (for example, green) color filter. This is an example in which a negative type resist is used as a color resist for forming a color filter, which is composed of a transmittance control region 32 and a light-shielding pattern 33 in the connecting portion.
透過率制御領域３２は、請求項２に記載したように、透過率が２０〜７０％になるように設定されている。
図３は、第１色（例えば、緑色）の緑色レジストを用いて緑色感光層を形成し、透過率を変化させたマスクを用いてパターン露光し、現像処理を行って形成された緑色フィルタの残膜率特性を示す説明図である。
透過率制御領域３２の透過率を光透過部の２０〜７０％にすることにより、開口率の高いフィルタ形成が可能となる。
透過率制御領域３２の透過率が２０％以下では、第１色（例えば、緑色）パターンが形成できず、第１色（例えば、緑色）パターンの四角がつながらないため、ムラ及び感度バラツキが発生する。
透過率制御領域３２の透過率が７０％以上では、図３に示すように、第１色（例えば、緑色）パターンの残膜率が９０％を超えてしまい、第１色（例えば、緑色）パターンのコーナー部が第２色（例えば、青色）、第３色（例えば、赤色）のコーナーと重なってしまい、段差が発生し、感度バラツキが発生する。
As described in the second aspect, the transmittance control region 32 is set so that the transmittance is 20 to 70%.
FIG. 3 shows a green filter formed by forming a green photosensitive layer using a green resist of a first color (for example, green), performing pattern exposure using a mask with changed transmittance, and performing development processing. It is explanatory drawing which shows a remaining film rate characteristic.
By setting the transmittance of the transmittance control region 32 to 20 to 70% of the light transmitting portion, a filter with a high aperture ratio can be formed.
When the transmittance of the transmittance control region 32 is 20% or less, the first color (for example, green) pattern cannot be formed, and the squares of the first color (for example, green) pattern are not connected, resulting in unevenness and sensitivity variations. .
When the transmittance of the transmittance control region 32 is 70% or more, as shown in FIG. 3, the remaining film ratio of the first color (for example, green) pattern exceeds 90%, and the first color (for example, green) The corner portion of the pattern overlaps the corner of the second color (for example, blue) and the third color (for example, red), a step is generated, and sensitivity variation occurs.
透過率制御領域３２は、幅ｄが０．１〜０．４μｍ、長さが０．１〜０．４μｍの矩形
状のパターンで形成されている。
透過率制御領域３２の透過率は、光を遮光するパターンの膜厚を変えて遮光部よりも光を透過させるようにしても良い。または、コーナー部の単位領域中で遮光部と光透過部とが占める比率を変えることで単位領域の透過率を変化させ、遮光部、光透過部とは異なった階調を持たせても良い。
すなわち、単位領域中で遮光部と光透過部とが占める比率を変えることで単位領域の透過率を変化させて階調を持たせる技術は網点マスク（または、濃度分布マスク）と呼称して用いられている技術を用いてもよい。遮光部の膜厚を変えて透過率を変化させるマスクは膜厚の制御が難しく製造に手間が掛かるが、単位領域中で遮光部と光透過部とが占める比率を変えることで単位領域の透過率を変化させて階調を持たせるマスクは製造が容易といえる。
図２は、透過率制御領域３２を網点構造に分割して、透過率５０％の透過率制御領域３２を実現した事例である。
The transmittance control region 32 is formed in a rectangular pattern having a width d of 0.1 to 0.4 μm and a length of 0.1 to 0.4 μm.
The transmittance of the transmittance control region 32 may be such that light is transmitted through the light-shielding portion by changing the film thickness of the light-shielding pattern. Alternatively, the transmittance of the unit area may be changed by changing the ratio of the light shielding part and the light transmitting part in the unit area of the corner part, so that the shades different from those of the light shielding part and the light transmitting part may be provided. .
In other words, the technique of changing the transmittance of the unit area by changing the ratio of the light shielding part and the light transmitting part in the unit area to give gradation is called a halftone mask (or density distribution mask). You may use the technique currently used. Masks that change transmittance by changing the film thickness of the light shielding part make it difficult to control the film thickness, and it takes time to manufacture. However, by changing the ratio of the light shielding part and the light transmitting part in the unit area, the transmission of the unit area is changed. It can be said that a mask having gradation by changing the rate is easy to manufacture.
FIG. 2 shows an example in which the transmittance control region 32 having a transmittance of 50% is realized by dividing the transmittance control region 32 into a halftone dot structure.
オンチップカラーフィルタ用フォトマスク３０は、低反射クロムブランクスを用いた電子ビームリソグラフィーにて作製されるので、０．１〜０．４μｍの透過率制御領域３２を精度良く再現できる。 Since the on-chip color filter photomask 30 is manufactured by electron beam lithography using low-reflection chrome blanks, the transmittance control region 32 of 0.1 to 0.4 μm can be accurately reproduced.
オンチップカラーフィルタ用フォトマスクを用いたオンチップカラーフィルタの製造方法について説明する。
図５（ａ）〜（ｆ）は、本発明のオンチップカラーフィルタ用フォトマスクを用いたオンチップカラーフィルタの製造方法の一実施例を示す模式構成断面図である。
ここで、緑色フィルタＧ、青色フィルタＢ及び赤色フィルタＧのカラーフィルタ配列は図４に示す配列とする。
An on-chip color filter manufacturing method using the on-chip color filter photomask will be described.
FIGS. 5A to 5F are schematic cross-sectional views showing an embodiment of a method for producing an on-chip color filter using the photomask for on-chip color filter of the present invention.
Here, the color filter arrangement of the green filter G, the blue filter B, and the red filter G is the arrangement shown in FIG.
まず、光電変換素子及び平坦化層が形成された半導体基板１１上に、ネガ型感光性樹脂に着色顔料（例えば、Ｃ．Ｉ．ピグメントイエロー１５０、Ｃ．Ｉ．ピグメントグリーン３６及びＣ．Ｉ．ピグメントグリーン７）と、シクロヘキサノンやＰＧＭＥＡなどの有機溶剤と、酸分解性樹脂と、光酸発生剤と、分散剤とをロールミル等で混練して作製したネガ型緑色レジストをスピンコート等で塗布し、緑色感光層２１を形成する（図５（ａ）参照）。 First, a color pigment (for example, CI Pigment Yellow 150, CI Pigment Green 36, and CI Pigment Green 36) is applied to a negative photosensitive resin on a semiconductor substrate 11 on which a photoelectric conversion element and a planarizing layer are formed. Pigment Green 7), a negative green resist prepared by kneading an organic solvent such as cyclohexanone or PGMEA, an acid-decomposable resin, a photoacid generator, and a dispersant with a roll mill or the like is applied by spin coating or the like. Then, the green photosensitive layer 21 is formed (see FIG. 5A).
次に、図１に示す、ガラス等の透明基板上に第１色（例えば、緑色）カラーフィルタ形成用の透過パターン３１と、第１色（例えば、緑色）カラーフィルタ形成用の透過パターン３１の四隅の連結部に透過率制御領域３２と、遮光パターン３３とが形成されたオンチップカラーフィルタ用フォトマスク３０を用いてパターン露光、現像等のパターニング処理を行って、半導体基板１１上の所定位置に緑色フィルタ２１Ｇと連結部２１ｃとを形成する（図５（ｂ）及び図６参照）。
ここで、緑色フィルタ２１Ｇの連結部２１ｃは、透過率が２０〜７０％の透過率制御領域３２でパターン露光されるため、緑色フィルタ２１Ｇの連結部２１ｃの膜厚は、緑色フィルタ２１Ｇの中央部の膜厚の１０〜９０％になるように設定される。
Next, a transmission pattern 31 for forming a first color (for example, green) color filter and a transmission pattern 31 for forming a first color (for example, green) color filter are formed on a transparent substrate such as glass as shown in FIG. Patterning processing such as pattern exposure and development is performed using an on-chip color filter photomask 30 in which the transmittance control region 32 and the light-shielding pattern 33 are formed at the four corners, and a predetermined position on the semiconductor substrate 11 is obtained. The green filter 21G and the connecting portion 21c are formed (see FIG. 5B and FIG. 6).
Here, since the connection part 21c of the green filter 21G is subjected to pattern exposure in the transmittance control region 32 having a transmittance of 20 to 70%, the film thickness of the connection part 21c of the green filter 21G is the central part of the green filter 21G. It is set to be 10 to 90% of the film thickness.
次に、ネガ型感光性樹脂に青色顔料（例えば、Ｃ．Ｉ．ピグメントブルー１５：６、Ｃ．Ｉ．ピグメントバイオレット２３）と、分散剤等とをロールミル等で混練して作製したネガ型青色レジストをスピンコート等で塗布し、青色感光層２２を形成する（図５（ｃ）参照）。 Next, a negative blue resin prepared by kneading a negative photosensitive resin with a blue pigment (for example, CI Pigment Blue 15: 6, CI Pigment Violet 23) and a dispersing agent using a roll mill or the like. A resist is applied by spin coating or the like to form the blue photosensitive layer 22 (see FIG. 5C).
次に、四角形状のパターンが形成された青色フィルタ用露光マスクを用いてパターン露光し、現像等の一連のパターニング処理を行って、青色フィルタ２２Ｂを形成する（図５（ｄ）及び図７参照）。
ここで、青色フィルタ２２Ｂのコーナー部は、緑色フィルタ２１Ｇの四隅に設けられた連結部２１ｃとオーバーラップされた状態で形成されるので、緑色フィルタ２１Ｇと青色フィルタ２２Ｂとの間で隙間が発生しない。
Next, pattern exposure is performed using a blue filter exposure mask on which a square pattern is formed, and a series of patterning processes such as development are performed to form a blue filter 22B (see FIGS. 5D and 7). ).
Here, the corners of the blue filter 22B are formed so as to overlap with the connecting portions 21c provided at the four corners of the green filter 21G, so that no gap is generated between the green filter 21G and the blue filter 22B. .
次に、ネガ型感光性樹脂に赤色顔料（例えば、Ｃ．Ｉ．ピグメントレッド１７７、Ｃ．Ｉ．ピグメントレッド４８：１及びＣ．Ｉ．ピグメントイエロー１３９）と、分散剤等とをロールミル等で混練して作製したネガ型赤色レジストをスピンコート等で塗布し、赤色感光層２３を形成する（図５（ｅ）参照）。 Next, a red pigment (for example, CI Pigment Red 177, CI Pigment Red 48: 1 and CI Pigment Yellow 139) and a dispersing agent, etc., are added to the negative photosensitive resin with a roll mill or the like. A negative red resist prepared by kneading is applied by spin coating or the like to form a red photosensitive layer 23 (see FIG. 5E).
次に、四角形状のパターンが形成された赤色フィルタ用露光マスクを用いてパターン露光し、現像等の一連のパターニング処理を行って、赤色フィルタ２３Ｒを形成する（図５（ｆ）及び図８参照）。
ここで、赤色フィルタ２３Ｒのコーナー部は、緑色フィルタ２１Ｇの四隅に設けられた連結部２１ｃとオーバーラップされた状態で形成されるので、緑色フィルタ２１Ｇと赤色フィルタ２３Ｒとの間で隙間が発生しない。
Next, pattern exposure is performed using a red filter exposure mask on which a square pattern is formed, and a series of patterning processes such as development are performed to form a red filter 23R (see FIG. 5F and FIG. 8). ).
Here, the corners of the red filter 23R are formed so as to overlap with the connecting portions 21c provided at the four corners of the green filter 21G, so that no gap is generated between the green filter 21G and the red filter 23R. .
以上の工程で、光電変換素子及び平坦化層が形成された半導体基板１１上に、緑色フィルタ２１Ｇと、青色フィルタ２２Ｂと、赤色フィルタ２３Ｒとからなる固体撮像素子カラーフィルタを形成することができる。 Through the above steps, a solid-state imaging device color filter including the green filter 21G, the blue filter 22B, and the red filter 23R can be formed on the semiconductor substrate 11 on which the photoelectric conversion element and the planarization layer are formed.
本発明のオンチップカラーフィルタ用フォトマスクを用いた固体撮像素子カラーフィルタの製造方法では、オンチップカラーフィルタ用フォトマスクを用いて第１色（緑色）カラーフィルタを作製するため、第２色（青色）、第３色（赤色）カラーフィルタ寸法を均一に作製することができ、第１色（緑色）フィルタと第２色（青色）フィルタとの間、第１色（緑色）フィルタと第３色（赤色）フィルタとの間で隙間が発生せず、感度特性に優れた固体撮像素子を得ることができる。 In the solid-state imaging device color filter manufacturing method using the on-chip color filter photomask according to the present invention, the first color (green) color filter is produced using the on-chip color filter photomask. Blue) and third color (red) color filter dimensions can be made uniformly, between the first color (green) filter and the second color (blue) filter, between the first color (green) filter and the third color filter. There is no gap between the color (red) filter and a solid-state imaging device having excellent sensitivity characteristics can be obtained.
１１……半導体基板
２１、２４……緑色感光層
２１ｃ……連結部
２１Ｇ、２４Ｇ、Ｇ……緑色フィルタ
２２、２５……青色感光層
２２Ｂ、２５Ｂ、Ｂ……青色フィルタ
２３、２６……赤色感光層
３３Ｒ、２６Ｒ、Ｒ……赤色フィルタ
３０……緑色フィルタ用フォトマスク
３１……透過パターン
３２……透過率制御領域
３３……遮光パターン
ｄ……透過率制御領域の幅
ｄ1……ブリッジ幅
ＧＰ……緑色フィルタ用パターン
11... Semiconductor substrate 21, 24... Green photosensitive layer 21 c .. Connecting portions 21 G, 24 G, G... Green filter 22, 25... Blue photosensitive layer 22 B, 25 B, B. photosensitive layer 33R, 26R, R ...... red filter 30 ...... green width d 1 ...... bridge filter photomask 31 ...... transmitting pattern 32 ...... transmittance control region 33 ...... shielding pattern d ...... transmittance control region Width GP …… Green filter pattern
Claims (4)
前記フォトマスクは、第２色、もしくは第３色フィルタの４辺に接するように市松模様状に配置された第１色フィルタを作製するための第１色フィルタ用フォトマスクであって、前記第１色フィルタに対応するように配置された四角形状の第１色フィルタ用パターンの４隅が接する連結部に透過率制御領域を設けたことを特徴とするオンチップカラーフィルタ用フォトマスク。 A photomask used for producing a colored filter having a square shape in plan view corresponding to a photoelectric conversion element of a solid-state imaging device by a photolithography method,
The photomask is a first color filter photomask for producing a first color filter arranged in a checkered pattern so as to be in contact with four sides of the second color or third color filter. A photomask for an on-chip color filter, wherein a transmittance control region is provided at a connecting portion where four corners of a rectangular first color filter pattern arranged so as to correspond to a one-color filter are in contact with each other.
4. The on-state according to claim 3, wherein the film thickness of the connecting portion at the four corners of the first color filter of the solid-state image sensor color filter is 10% to 90% of the film thickness of the central portion of the first color filter. Manufacturing method of chip color filter.
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| JP2009192574A (en) * | 2008-02-12 | 2009-08-27 | Toppan Printing Co Ltd | Photomask for on chip color filter, and method of manufacturing on chip color filter |
| CN102683365A (en) * | 2011-03-14 | 2012-09-19 | 索尼公司 | Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic apparatus |
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