JP4598680B2 - Solid-state imaging device and camera - Google Patents

Description

  The present invention relates to a solid-state imaging device including a color on-chip filter, a manufacturing method thereof, and a camera including the solid-state imaging device.

  Conventionally, solid-state image pickup devices such as a CCD solid-state image pickup device and a MOS solid-state image pickup device having a photoelectric conversion unit that converts light into electric charges have been used in various image input devices such as video cameras, digital still cameras, and facsimiles. .

  As these solid-state imaging devices, color solid-state imaging devices including color filters are also known. A conventional color solid-state imaging device is, for example, a primary color filter composed of a combination of red (R), blue (B) and green (G), or cyan (C), magenta (M), yellow (Y) and green ( The complementary color filter composed of the combination of G) is laminated on the light receiving surface of the light receiving elements arranged two-dimensionally on the solid-state imaging device in a predetermined pattern so that one color corresponds to one light receiving element. As described above, the color filter laminated on the light receiving surface of the light receiving element is generally referred to as an “on-chip filter”.

  Incidentally, the incident light on the light receiving surface of the color solid-state imaging device is not necessarily perpendicular to the light receiving surface and parallel to each other. When light incident on the light receiving surface from an oblique direction passes through one color filter obliquely and enters an adjacent light receiving element, there is a problem that color mixing occurs.

  As a structure for solving such a problem of color mixture, a color solid-state imaging device 91 in which black light-shielding films 96a to 96c are provided at a boundary portion (pixel boundary portion) of a light-receiving pixel region where a photodiode (PD) is disposed. Is known (see, for example, Patent Document 1). FIG. 19 is a cross-sectional view schematically showing the structure of a conventional color solid-state imaging device. The color solid-state imaging device shown in FIG. 19 is manufactured through the following steps.

  First, the first light-shielding film 96a is formed at the pixel boundary portion on the imaging surface of the solid-state imaging device 91 by patterning a dyeable resin to a predetermined film thickness and dyeing with a black dye. Next, a first color filter (R) 93 is formed by patterning and dyeing a dyeable resin in a predetermined region among the regions partitioned by the light shielding film 96a.

  Next, a transparent dye-proof film 97 is formed on the light-receiving surface on which the first light-shielding film 96a and the first color filter 93 are formed, and a dyeable resin is applied to the pixel boundary portion on the transparent dye-proof film 97. The second light-shielding film 96b is formed by patterning to a film thickness and dyeing with a black dye. Next, a second color filter (G) 94 is formed by patterning and dyeing a dyeable resin in a predetermined region among the regions partitioned by the light shielding film 96b.

  Further, in the same manner as described above, a transparent dye-proof film 98, a third light-shielding film 96c, and a third color filter (B) 95 are formed, and finally a transparent dye-proof film 99 is formed as a protective layer.

  In this way, by forming the black light shielding films 96a to 96c at the pixel boundary portions, for example, the light incident obliquely to the B color filter 95 and transmitted therethrough is blocked by the light shielding films 96a to 96c. The light does not enter the adjacent light receiving pixel region (PD part) 92. Thereby, it is possible to prevent color mixing due to oblique light.

  Incidentally, the solid-state imaging device has a flattening layer, a color filter layer, and a condensing lens forming layer on each light receiving portion formed on the substrate. At present, as a method of forming a condensing lens, a method of forming by a heat flow or a method of transferring by a dry etching technique is used.

  In the lens forming technique disclosed in Patent Document 2, a photosensitive resist is applied to the entire upper surface of the substrate, heated at a first temperature, and the resist is selectively exposed to form a pattern. Decolorize by exposure. Then, it heats at 2nd temperature, forms a shape by a thermal deformation, and makes it thermoset at 3rd temperature higher than 2nd temperature. The refractive index of this photosensitive resist has a value of about 1.6 with respect to air 1. When the condensing lens made of this photosensitive resist is used, the amount of condensing of each pixel is increased and the sensitivity is improved about twice as compared with the case where the condensing lens is not formed. However, in this method, the photosensitive resist is required to have not only optical characteristics but also various characteristics such as coating characteristics, patterning characteristics, heat flow characteristics, and heat resistance. Therefore, it is not easy to select materials. In other words, the accuracy of the process is questioned depending on the selection of the photosensitive resist.

On the other hand, in the lens forming technique disclosed in Patent Document 3, a polyimide non-photosensitive material is applied and then cured. Thereafter, a first photoresist is applied to the entire surface of the non-photosensitive material, and selectively exposed to remove a portion of the first photoresist located on the electrode pad portion. Further, a second photoresist is applied on the entire surface, and the second photoresist is selectively removed corresponding to the light receiving portion, followed by heating to form the first condensing lens original shape. To do. Subsequently, the first condensing lens prototype is transferred to the first photoresist by etch-back to form a second condensing lens prototype. Thereafter, the second condenser lens prototype is transferred to the non-photosensitive material to form a condenser lens. Compared with the technique disclosed in Patent Document 2, the characteristics required for the material to be the condensing lens cannot include the patterning characteristics and the heat flow characteristics, so that the range of material selection is widened.
JP-A-2-084766 Japanese Patent No. 2604890 Japanese Patent No. 3158466

  However, in the configuration disclosed in Patent Document 1, (1) formation of a black light shielding film, (2) formation of a first color filter, (3) formation of a stain-proof film, and (4) black light shielding film. (5) Formation of the second color filter, (6) Formation of the stain-proof film, (7) Formation of the black light-shielding film, (8) Formation of the third color filter, (9) Protection layer Many steps of forming are required. Further, there is a problem that the size of each pixel is reduced by downsizing and increasing the number of pixels of the solid-state imaging device, and it is difficult to form a black light-shielding film pattern by lithography.

  Therefore, a first object of the present invention is to provide a solid-state imaging device having a fine pixel size capable of preventing color mixture due to oblique light by a simpler manufacturing process.

  On the other hand, in the technique disclosed in Patent Document 3, it is necessary to dilute the non-photosensitive material applied on the substrate with a solvent, which causes a problem that the storage stability of the material is poor. Moreover, since it dilutes with a solvent, there exists a problem that the electron density of a non-photosensitive material falls and a refractive index falls.

  Therefore, a second object of the present invention is to easily form a high-refractive-index lens with high storage stability in a method for manufacturing a condensing lens in a solid-state imaging device.

  The solid-state imaging device according to the first aspect of the present invention includes a semiconductor substrate, a light receiving element formed in a matrix on the semiconductor substrate, and a plurality of color filter layers formed in an upper layer of the light receiving element and separated from each other by a gap. And a solid-state imaging device that is formed in an upper layer of the plurality of color filter layers and collects light on the light receiving element, wherein gas exists in the gap.

  According to the solid-state imaging device of the first aspect of the present invention, the oblique light incident on the color filter of a certain pixel is reflected by the wall surface of the color filter due to the refractive index difference between the color filter and air, so that the light use efficiency is increased. Can do. Further, the oblique light incident on the color filter of a certain pixel is refracted by the wall surface of the color filter, thereby preventing entry to the adjacent light receiving element. Thereby, the color mixture from the adjacent pixel by diagonal light can be prevented. In the solid-state imaging device according to the first aspect of the present invention, it is not necessary to form a black dyed pattern with a narrow pattern width as in the prior art, so that even a fine pixel size can be provided. Further, since it is not necessary to form a black light-shielding film with a narrow pattern width unlike a conventional solid-state imaging device, the pixel size can be miniaturized.

  A solid-state imaging device according to a second aspect of the present invention includes a semiconductor substrate, a light receiving element formed in a matrix on the semiconductor substrate, and a plurality of color filter layers formed in an upper layer of the light receiving element and separated from each other by a gap. And a solid-state imaging device that is formed in an upper layer of the plurality of color filter layers, and that collects light on the light receiving element, wherein the gap is more resistant to light than the plurality of color filters. A material having a low refractive index is filled.

  According to the solid-state imaging device of the second aspect of the present invention, the oblique light incident on the color filter of a certain pixel is reflected on the wall surface of the color filter due to the refractive index difference between the color filter and the low refractive index layer. Efficiency can be increased. Further, the oblique light incident on the color filter of a certain pixel is refracted by the wall surface of the color filter, thereby preventing entry to the adjacent light receiving element. Thereby, the color mixture from the adjacent pixel by diagonal light can be prevented. According to the solid-state imaging device of the second aspect of the present invention, it is not necessary to form a black dyeing pattern with a narrow pattern width as in the prior art, so that even a fine pixel size can be provided. Further, since it is not necessary to form a black light-shielding film with a narrow pattern width unlike a conventional solid-state imaging device, the pixel size can be miniaturized.

  A solid-state imaging device according to a third aspect of the present invention includes a semiconductor substrate, a light receiving element formed in a matrix on the semiconductor substrate, and a plurality of color filter layers formed in an upper layer of the light receiving element and separated from each other by a gap. And a solid-state imaging device formed on an upper layer of the plurality of color filter layers and condensing means for condensing light on the light receiving element, wherein the gap is filled with an organic pigment layer.

  According to the solid-state imaging device of the third aspect of the present invention, the oblique light incident on the color filter of a certain pixel is reflected on the wall surface of the color filter due to the refractive index difference between the color filter and the organic pigment layer. Can be increased. Further, the oblique light incident on the color filter of a certain pixel is refracted by the wall surface of the color filter, thereby preventing entry to the adjacent light receiving element. Thereby, the color mixture from the adjacent pixel by diagonal light can be prevented. Since it is not necessary to form a black dyeing pattern with a narrow pattern width as in the prior art, it is possible to provide even a fine pixel size. Further, since it is not necessary to form a black light-shielding film with a narrow pattern width unlike a conventional solid-state imaging device, the pixel size can be miniaturized.

  In the solid-state imaging device according to the first to third aspects of the present invention, the semiconductor substrate is a part of a chip, and a side surface of the gap is perpendicular to an upper surface of the semiconductor substrate at a central portion of the chip. In the portion of the chip located outside the central portion, the side surface of the gap may be inclined from the direction perpendicular to the upper surface of the semiconductor substrate. In this case, since the shift of the light reflected from the color filter can be corrected at the peripheral portion of the chip, the pudging at the edge portion of the output image can be prevented.

  In the solid-state imaging device according to any one of the first to third aspects of the present invention, the semiconductor substrate is a part of a chip, and a plurality of the light receiving elements are provided. It is formed above the element boundary (above the vertical direction with respect to the upper surface of the semiconductor substrate as the vertical direction), and the gap is adjacent to the portion of the chip located outside the central portion. It may be formed at a position shifted from above the boundary of the light receiving element. In this case, since the shift of the light reflected from the color filter can be corrected at the peripheral portion of the chip, the pudging at the edge portion of the output image can be prevented.

  In the solid-state imaging device according to the first to third aspects of the present invention, the gap may have a shape whose width becomes narrower upward. In this case, when light incident obliquely from the adjacent lens passes through the upper part of the color filter, color mixing with the adjacent color is less likely to occur, and light use efficiency is increased.

  The solid-state imaging device according to the first to third aspects of the present invention may further include a base film formed on the lower surface of the color filter, and the gap may be formed also in the base film.

  The solid-state imaging device according to the first to third aspects of the present invention may further include a planarizing film formed on the upper surface of the color filter, and the gap may be formed also in the planarizing film.

  In the camera including the solid-state imaging device according to the first to third aspects of the present invention, color mixing is prevented. Therefore, a digital camera with excellent image quality can be realized at low cost.

  In the solid-state imaging device according to the first to third aspects of the present invention, the color filter layer can be composed of, for example, a primary color Bayer array color filter, a primary color stripe array color filter, or a complementary color filter.

  The manufacturing method of the solid-state imaging device according to the first aspect of the present invention is a manufacturing method of a solid-state imaging device having light receiving elements formed in a matrix on a semiconductor substrate, and a color filter forming film is formed on the light receiving element. Forming a photosensitive resin layer on the color filter forming film and performing selective exposure on the photosensitive resin layer, thereby forming grooves in the photosensitive resin layer; A step (b) of forming a pattern of the step, and a step (c) of forming a plurality of color filter layers by forming a groove in the color filter forming film by etching using the photosensitive resin layer as a mask. And (d) forming a light collecting means on the upper layers of the plurality of color filter layers.

  In the solid-state imaging device created by the manufacturing method according to the first aspect of the present invention, the oblique light incident on the color filter of a certain pixel is reflected by the wall surface of the color filter due to the difference in refractive index between the color filter and air. Can be increased. Further, the oblique light incident on the color filter of a certain pixel is refracted by the wall surface of the color filter, thereby preventing entry to the adjacent light receiving element. Thereby, the color mixture from the adjacent pixel by diagonal light can be prevented. Since it is not necessary to form a black dyeing pattern with a narrow pattern width as in the prior art, it is possible to provide even a fine pixel size. Further, since it is not necessary to form a black light-shielding film with a narrow pattern width unlike a conventional solid-state imaging device, the pixel size can be miniaturized.

  In the manufacturing method of the first aspect of the present invention, before the step (a), a step (e) of forming the light receiving element on the semiconductor substrate, and a planarizing film on the semiconductor substrate and the light receiving element. A step (g) of forming a sheet made of an organic material on the plurality of color filter layers after the step (c) and before the step (d). In the step (d), the light collecting means may be formed on the sheet.

  A method for manufacturing a solid-state imaging device according to a second aspect of the present invention is a method for manufacturing a solid-state imaging device having light receiving elements formed in a matrix on a semiconductor substrate, and a color filter forming film is formed on the light receiving element. Forming a photosensitive resin layer on the color filter forming film and performing selective exposure on the photosensitive resin layer, thereby forming grooves in the photosensitive resin layer; A step (b) of forming a pattern of the step, and a step (c) of forming a plurality of color filter layers by forming a groove in the color filter forming film by etching using the photosensitive resin layer as a mask. A step (d) of forming a low refractive index layer having a lower refractive index with respect to light than the plurality of color filter layers in the groove, and a step of forming a condensing means on the plurality of color filter layers. Characterized in that it comprises a (e).

  In the solid-state imaging device created by the manufacturing method according to the second aspect of the present invention, the oblique light incident on the color filter of a certain pixel is reflected by the wall surface of the color filter due to the refractive index difference between the color filter and the low refractive index layer. Light utilization efficiency can be increased. Further, the oblique light incident on the color filter of a certain pixel is refracted by the wall surface of the color filter, thereby preventing entry to the adjacent light receiving element. Thereby, the color mixture from the adjacent pixel by diagonal light can be prevented. Since it is not necessary to form a black dyeing pattern with a narrow pattern width as in the prior art, it is possible to provide even a fine pixel size. Further, since it is not necessary to form a black light-shielding film with a narrow pattern width unlike a conventional solid-state imaging device, the pixel size can be miniaturized.

  A manufacturing method of a solid-state imaging device according to a third aspect of the present invention is a manufacturing method of a solid-state imaging device having light receiving elements formed in a matrix on a semiconductor substrate, and a color filter forming film is formed on an upper layer of the light receiving elements. Forming a photosensitive resin layer on the color filter forming film and performing selective exposure on the photosensitive resin layer, thereby forming grooves in the photosensitive resin layer; A step (b) of forming a pattern of the step, and a step (c) of forming a plurality of color filter layers by forming a groove in the color filter forming film by etching using the photosensitive resin layer as a mask. And (d) depositing an organic pigment in the groove, and (e) forming a light collecting means on the color filter layers.

  In the solid-state imaging device created by the manufacturing method of the third aspect of the present invention, the oblique light incident on the color filter of a certain pixel is reflected on the wall surface of the color filter due to the refractive index difference between the color filter and the organic pigment layer. Can improve the efficiency of use. Further, the oblique light incident on the color filter of a certain pixel is refracted by the wall surface of the color filter, thereby preventing entry to the adjacent light receiving element. Thereby, the color mixture from the adjacent pixel by diagonal light can be prevented. Since it is not necessary to form a black dyeing pattern with a narrow pattern width as in the prior art, it is possible to provide even a fine pixel size. Further, since it is not necessary to form a black light-shielding film with a narrow pattern width unlike a conventional solid-state imaging device, the pixel size can be miniaturized.

  In the manufacturing method of the 3rd aspect of this invention, you may vapor-deposit the said organic pigment of a single color or multiple colors in the said process (d).

  In the method for manufacturing a solid-state imaging device according to the second aspect and the third aspect of the present invention, before the step (a), the step (f) of forming the light receiving element on the semiconductor substrate, the semiconductor substrate and the light reception A step (g) of forming a planarizing film on the device, and after the step (d) and before the step (e), an organic material is formed on the plurality of color filter layers. A step (h) of attaching a sheet to be formed, and in the step (e), the light condensing means may be formed on the sheet.

  The manufacturing method of the solid-state imaging device of the 4th aspect in this invention is a manufacturing method of the image sensor which has a condensing lens, Comprising: The process (a) of sticking a sheet-like material on the board | substrate with which the several light receiving element was formed. And a step (b) of forming a lens-shaped resist on the sheet-shaped material, and a step of forming the condensing lens by transferring the shape of the lens-shaped resist to the sheet-shaped material by etching ( c).

  According to the manufacturing method of the fourth aspect of the present invention, since the condensing lens is formed from a sheet-like material, it is not necessary to dilute the condensing lens material into a varnish as in the prior art. Therefore, the storage stability of the condenser lens can be improved. Furthermore, it is possible to prevent the electron density of the condenser lens from being lowered and the refractive index from being lowered.

  In the manufacturing method of the 4th aspect of this invention, it is preferable that the refractive index of the said sheet-like material is 1.6 or more. In this case, the amount of light collected by individual pixels in the image sensor can be effectively increased. Thereby, the sensitivity of the image sensor can be improved.

  In the manufacturing method according to the fourth aspect of the present invention, examples of the sheet-like material having a high refractive index include a material containing a carbodiimide group. Alternatively, thermosetting resin such as polyimide resin or phenol resin can be used.

  According to the present invention, it is possible to provide a solid-state imaging device having an on-chip filter that can prevent color mixing from adjacent pixels due to oblique light even with a minute pixel size.

(First embodiment)
A solid-state imaging device according to the first embodiment of the present invention will be described below. Here, a CCD solid-state imaging device is illustrated, but the present invention is not limited to a CCD solid-state imaging device, but can be applied to a MOS solid-state imaging device or the like.

  FIG. 1 is a cross-sectional view illustrating the structure of the solid-state imaging device according to the first embodiment. As shown in FIG. 1, the solid-state imaging device of this embodiment includes a semiconductor substrate 1, a plurality of light receiving portions 2 formed in a matrix on the semiconductor substrate 1, and the light receiving portions 2 on the semiconductor substrate 1. And a transfer electrode 3 provided in a region located between the two.

The transfer electrode 3 is provided on the semiconductor substrate 1 via the insulating film 4. A light shielding film 5 for preventing light from entering the transfer electrode 3 is formed on the top surfaces of the transfer electrode 3 and the insulating film 4. On the light receiving portion 2 and the light shielding film 5, a transparent flat film 6 having high optical transmittance is formed in order to flatten the step between the light receiving portion 2 and the transfer electrode 3 to a certain value or less. The film that can be used for the transparent flat film 6, an inorganic film such as BPSG or SiO _2, or polyimides resin, epoxy resin, acrylic resin, urethane resin, and phenolic resin or a silicone resin.

  A color filter base film 7 is formed on the transparent flat film 6, and color filters 8 a, 8 b and 8 c are formed on the color filter base film 7. There is a gap 9 between each of the color filters 8a, 8b, 8c, and the color filters 8a, 8b, 8c are separated from each other.

  A planarizing film 10 made of acrylic resin is formed on the color filters 8a, 8b, 8c and the gap 9. On the planarizing film 10, microlenses 11 are formed which are aligned with the respective light receiving units 2 and collect incident light on the respective light receiving units 2.

  When the oblique light a is incident on the microlens 11 of the present embodiment, for example, the light passes through the microlens 11 and the planarizing film 10 and then passes through the color filter 8a. Then, the light a is reflected or multiple-reflected on the side wall of the color filter 8a (the boundary between the color filter 8a and the gap 9) and enters the light receiving unit 2 disposed below the color filter 8a. Therefore, the light use efficiency can be increased. Further, the light a refracted without being reflected by the side wall of the color filter 8a also reaches the light shielding film 5 and the like, and therefore does not enter the other adjacent light receiving portions 2. Therefore, it is difficult for oblique light to enter each light receiving unit 2, and color mixing caused by oblique light is less likely to occur.

  FIG. 2 is a cross-sectional view illustrating a structure of a solid-state imaging device according to a modification of the first embodiment. As shown in FIG. 2, the gap 9 may have a triangular cross section whose width becomes narrower upward.

(Second Embodiment)
A solid-state imaging device according to the second embodiment of the present invention will be described below. Here, a CCD solid-state imaging device is illustrated, but the present invention is not limited to a CCD solid-state imaging device, but can be applied to a MOS solid-state imaging device or the like.

  FIG. 3 is a cross-sectional view illustrating the structure of the solid-state imaging device according to the second embodiment. As shown in FIG. 3, the solid-state imaging device according to the present embodiment includes a semiconductor substrate 1, a plurality of light receiving portions 2 formed in a matrix on the semiconductor substrate 1, and the light receiving portions 2 on the semiconductor substrate 1. And a transfer electrode 3 provided in a region located between the two.

The transfer electrode 3 is provided on the semiconductor substrate 1 via the insulating film 4. A light shielding film 5 for preventing light from entering the transfer electrode 3 is formed on the top surfaces of the transfer electrode 3 and the insulating film 4. On the light receiving portion 2 and the light shielding film 5, a transparent flat film 6 having high optical transmittance is formed in order to flatten the step between the light receiving portion 2 and the transfer electrode 3 to a certain value or less. The film that can be used for the transparent flat film 6, an inorganic film such as BPSG or SiO _2, or polyimides resin, epoxy resin, acrylic resin, urethane resin, and phenolic resin or a silicone resin.

  A color filter base film 7 is formed on the transparent flat film 6, and color filters 8 a, 8 b and 8 c are formed on the color filter base film 7. A low refractive index layer 12 having a light refractive index lower than that of the color filter is formed between the color filters 8a, 8b, and 8c.

  A planarizing film 10 made of acrylic resin is formed on the color filters 8a, 8b, 8c and the low refractive index layer 12. On the planarizing film 10, microlenses 11 are formed which are aligned with the respective light receiving units 2 and collect incident light on the respective light receiving units 2.

  When the oblique light a is incident on the microlens 11 of the present embodiment, for example, the light passes through the microlens 11 and the planarizing film 10 and then passes through the color filter 8a. The light a is reflected or multiple-reflected on the side wall of the color filter 8a (the boundary between the color filter 8a and the low refractive index layer 12), and enters the light receiving unit 2 disposed below the color filter 8a. Alternatively, the light a refracted without being reflected by the side wall of the color filter 8a also reaches the light shielding film 5 and the like, and therefore does not enter the other adjacent light receiving portions 2. Therefore, it is difficult for oblique light to enter each light receiving unit 2, and color mixing caused by oblique light is less likely to occur.

(Third embodiment)
A solid-state imaging device according to the third embodiment of the present invention will be described below. Here, a CCD solid-state imaging device is illustrated, but the present invention is not limited to a CCD solid-state imaging device, but can be applied to a MOS solid-state imaging device or the like.

  FIG. 4 is a cross-sectional view illustrating the structure of the solid-state imaging device according to the third embodiment. As shown in FIG. 4, the solid-state imaging device of the present embodiment includes a semiconductor substrate 1, a plurality of light receiving portions 2 formed in a matrix on the semiconductor substrate 1, and the light receiving portions 2 on the semiconductor substrate 1. And a transfer electrode 3 provided in a region located between the two.

The transfer electrode 3 is provided on the semiconductor substrate 1 via the insulating film 4. A light shielding film 5 for preventing light from entering the transfer electrode 3 is formed on the top surfaces of the transfer electrode 3 and the insulating film 4. On the light receiving portion 2 and the light shielding film 5, a transparent flat film 6 having high optical transmittance is formed in order to flatten the step between the light receiving portion 2 and the transfer electrode 3 to a certain value or less. The film that can be used for the transparent flat film 6, an inorganic film such as BPSG or SiO _2, or polyimides resin, epoxy resin, acrylic resin, urethane resin, and phenolic resin or a silicone resin.

  A color filter base film 7 is formed on the transparent flat film 6, and color filters 8 a, 8 b and 8 c are formed on the color filter base film 7. An organic pigment layer 13 is formed between each of the color filters 8a, 8b, and 8c.

  On the color filters 8a, 8b, 8c and the organic pigment layer 13, a planarizing film 10 made of acrylic resin is formed. On the planarizing film 10, microlenses 11 are formed which are aligned with the respective light receiving units 2 and collect incident light on the respective light receiving units 2.

  When the oblique light a is incident on the microlens 11 of the present embodiment, for example, the light passes through the microlens 11 and the planarizing film 10 and then passes through the color filter 8a. The light a is reflected or multiple-reflected on the side wall of the color filter 8a (the boundary between the color filter 8a and the organic pigment layer 13) and enters the light receiving unit 2 disposed below the color filter 8a. Alternatively, the light a refracted without being reflected by the side wall of the color filter 8a also reaches the light shielding film 5 and the like, and therefore does not enter the other adjacent light receiving portions 2. Therefore, it is difficult for oblique light to enter each light receiving unit 2, and color mixing caused by oblique light is less likely to occur.

(Fourth embodiment)
A solid-state imaging device according to the fourth embodiment of the present invention will be described below. Although a CCD solid-state imaging device is illustrated here, the present invention is not limited to a CCD solid-state imaging device, but can be applied to a MOS type solid-state imaging device or the like.

  FIG. 5 is a cross-sectional view showing the structure of the solid-state imaging device according to the fourth embodiment. As shown in FIG. 5, the solid-state imaging device of the present embodiment includes a semiconductor substrate 1, a plurality of light receiving portions 2 formed in a matrix on the semiconductor substrate 1, and the light receiving portions 2 on the semiconductor substrate 1. And a transfer electrode 3 provided in a region located between the two.

The transfer electrode 3 is provided on the semiconductor substrate 1 via the insulating film 4. A light shielding film 5 for preventing light from entering the transfer electrode 3 is formed on the top surfaces of the transfer electrode 3 and the insulating film 4. On the light receiving portion 2 and the light shielding film 5, a transparent flat film 6 having high optical transmittance is formed in order to flatten the step between the light receiving portion 2 and the transfer electrode 3 to a certain value or less. The film that can be used for the transparent flat film 6, an inorganic film such as BPSG or SiO _2, or polyimides resin, epoxy resin, acrylic resin, urethane resin, and phenolic resin or a silicone resin.

  A color filter base film 7 is formed on the transparent flat film 6, and color filters 8 a, 8 b and 8 c are formed on the color filter base film 7. A gap 9 is formed between each of the color filters 8a, 8b, and 8c. Within one chip, the incident angle of light incident on the color filters 8a, 8b, and 8c increases as the distance from the center increases. For this reason, the center of the lens 11 and the light receiving unit 2 is shifted from the center of the chip away from the center of the chip. In order to cope with this, in this embodiment, the inclination of the side wall of the gap 9 is increased as the distance from the center of the chip increases.

  A planarizing film 10 made of acrylic resin is formed on the color filters 8a, 8b, 8c and the gap 9. On the planarizing film 10, microlenses 11 are formed which are aligned with the respective light receiving units 2 and collect incident light on the respective light receiving units 2.

  In this embodiment, it is possible to correct the shift of light reflected from the color filter in the peripheral portion of the chip, so that it is possible to prevent pudging at the edge of the output image.

(Fifth embodiment)
A solid-state imaging device according to the fifth embodiment of the present invention will be described below. Here, a CCD solid-state imaging device is illustrated, but the present invention is not limited to a CCD solid-state imaging device, but can be applied to a MOS solid-state imaging device or the like.

  FIG. 6 is a cross-sectional view illustrating the structure of the solid-state imaging device according to the fifth embodiment. As shown in FIG. 6, the solid-state imaging device of the present embodiment includes a semiconductor substrate 1, a plurality of light receiving portions 2 formed in a matrix on the semiconductor substrate 1, and the light receiving portions 2 on the semiconductor substrate 1. And a transfer electrode 3 provided in a region located between the two.

The transfer electrode 3 is provided on the semiconductor substrate 1 via the insulating film 4. A light shielding film 5 for preventing light from entering the transfer electrode 3 is formed on the top surfaces of the transfer electrode 3 and the insulating film 4. On the light receiving portion 2 and the light shielding film 5, a transparent flat film 6 having high optical transmittance is formed in order to flatten the step between the light receiving portion 2 and the transfer electrode 3 to a certain value or less. The film that can be used for the transparent flat film 6, an inorganic film such as BPSG or SiO _2, or polyimides resin, epoxy resin, acrylic resin, urethane resin, and phenolic resin or a silicone resin.

  A color filter base film 7 is formed on the transparent flat film 6, and color filters 8 a, 8 b and 8 c are formed on the color filter base film 7. A gap 9 is formed between each of the color filters 8a, 8b, and 8c. Within one chip, the incident angle of light incident on the color filters 8a, 8b, and 8c increases as the distance from the center increases. Therefore, in the peripheral part away from the center of the chip, the centers of the lens 11 and the light receiving part 2 are formed so as to be shifted toward the center of the chip. In order to cope with this, in this embodiment, the center of the gap 9 is shifted inward as the distance from the center of the chip increases.

  In this embodiment, it is possible to correct the shift of light reflected from the color filter in the peripheral portion of the chip, so that it is possible to prevent pudging at the edge of the output image.

(Sixth embodiment)
Next, a solid-state imaging device according to a sixth embodiment of the present invention will be described. FIG. 7 is a sectional view showing a structure of a solid-state imaging device according to the sixth embodiment of the present invention.

  As shown in FIG. 7, in the solid-state imaging device of the present embodiment, the gap 9 is formed not only between the color filters 8 a to 8 c but also on the planarizing film 10 and the color filter base film 7. Since the other configuration is the same as that described in the first embodiment, the description thereof is omitted.

  In the configuration of the present embodiment, since the region where the gap 9 is formed increases, more light can be reflected. Thereby, light can be incident on the light receiving unit 2 more reliably.

  FIG. 7 shows a case where the gap 9 in the structure shown in FIG. 1 is also formed in the planarizing film 10 and the color filter base film 7. However, the gap 9 in the structure shown in FIGS. 2 to 6 may be formed in the planarizing film 10 or the color filter base film 7. Specifically, in the structure shown in FIG. 2, a gap 9 having a triangular cross section may be formed in the planarizing film 10 or the color filter base film 7. In the structure shown in FIG. 3, the low refractive index layer 12 may be formed on the planarizing film 10 or the color filter base film 7. In the structure shown in FIG. 4, the organic pigment layer 13 may be formed on the planarizing film 10 or the color filter base film 7. In the structure shown in FIG. 5, a gap 9 with inclined sidewalls may be formed in the planarization layer 10 or the color filter base film 7. Also in the structure shown in FIG. 6, the gap 9 may be formed in the planarizing film 10 or the color filter base film 7.

(Seventh embodiment)
A method for manufacturing the solid-state imaging device according to the seventh embodiment of the present invention will be described below. Here, a case where a CCD solid-state imaging device is manufactured is illustrated, but the present invention is not limited to a CCD solid-state imaging device but can be applied to a MOS solid-state imaging device or the like.

  FIG. 8A to FIG. 11B are cross-sectional views illustrating manufacturing steps of the solid-state imaging device according to the seventh embodiment of the present invention. Note that the manufacturing method according to the present embodiment is a method for manufacturing the solid-state imaging device according to the first embodiment.

In the method of manufacturing the solid-state imaging device according to the present embodiment, first, in the step shown in FIG. 8A, a plurality of light receiving portions 2 are formed on the semiconductor substrate 1 by arranging them in a matrix. The transfer electrode 3 is formed in a region located between the light receiving portions 2 in FIG. Then, a light shielding film 5 for preventing light from entering the transfer electrode 3 is formed on the transfer electrode 3. Subsequently, a transparent flat film 6 is formed thereon in order to flatten the step generated by the light receiving unit 2 and the transfer electrode 3 to a certain value or less. As the transparent flat film 6, an inorganic film such as BPSG or SiO ₂ is a high transmittance optically material, or polyimide resin, epoxy resin, acrylic resin, urethane resin, a phenol resin or a silicone resin. When a resin is used as the transparent flat film 6, a resin having a film thickness of 0.5 to 5 [mu] m is applied on the substrate, and then thermosetting is performed at a temperature of 180 to 250 [deg.] C. for 2 to 5 minutes.

  Next, a transparent resin (not shown) is applied on the transparent flat film 6 and thermosetting is performed at a temperature of 180 to 250 ° C. for 2 to 5 minutes, whereby a film thickness of 0.05 μm to 0.3 μm is obtained. The color filter base film 7 is formed. The color filter base film 7 has high adhesiveness to the color filters 8a, 8b, and 8c (shown in FIG. 8B, etc.) formed on the color filter base film 7, and has good compatibility with no development residue. High transparent resin is used.

  Next, in the step shown in FIG. 8B, a negative pigment resist (not shown) is applied over the entire color filter base film 7. This coating is performed by supplying 3 to 5 cc of resist at a spinner main rotation of 1500 to 3000 rpm for 30 seconds. After applying the resist, prebaking is performed at a temperature of 80 to 100 ° C. for 30 to 80 seconds. Thereafter, the resist is selectively exposed by performing ultraviolet (i-line) irradiation using a photomask (not shown). Thereafter, development is performed using a water-soluble alkaline developer, and the resist is heat-cured by performing post-baking at a temperature of 180 ° C. to 250 ° C. for 2 to 5 minutes. Thereby, the first color filter 8a made of resist is formed. By performing the same method, the second color filter 8b and the third color filter 8c are formed.

Next, in the step shown in FIG. 8C, a positive photosensitive resin (not shown) having a film thickness of 1.0 to 5.0 μm is applied on the first to third color filters 8a to 8c. To do. This application is performed by supplying the resist at a main rotation of 1500 to 3000 rpm for 30 seconds. Thereafter, prebaking is performed at a temperature of 80 to 100 ° C. for 30 to 80 seconds. Thereafter, the resist is selectively exposed by performing ultraviolet (i-line) irradiation using a photomask (not shown). Thereafter, development is performed using a water-soluble alkaline developer to form a pattern 14 that opens portions located at the respective boundaries of the first to third color filters 8a to 8c. Thereafter, a gap 9 is formed between the first to third color filters 8a to 8c by performing dry etching on the pattern 14 with a mixed gas of CF ₄ and O ₂ or the like.

  Thereafter, in the step shown in FIG. 9A, the pattern 14 remaining on the color filters 8a, 8b, and 8c is removed by using a solvent such as methyl butyl ketone.

  Next, in the step shown in FIG. 9B, after the planarization film 10 is formed on the color filters 8a, 8b, and 8c, the high refractive index sheet having a film thickness of 0.5 to 2.0 μm is formed thereon. A microlens 11 is formed by attaching a material (not shown) and performing thermosetting at a temperature of 180 ° C. to 250 ° C. for 2 to 5 minutes. In addition, as a high refractive index sheet material, a sheet containing a carbodiimide group may be used, or a thermosetting sheet such as a polyimide resin or a phenol resin may be used.

  Next, in the step shown in FIG. 10A, a novolac resin is applied to the entire surface of the wafer by supplying main rotation 1500 to 3000 rpm for 30 seconds. Thereafter, prebaking is performed at a temperature of 80 to 100 ° C. for 30 to 80 seconds to form a lens prototype layer 15 having a film thickness of 0.5 μm to 2.0 μm. By subjecting the photomask 16 to ultraviolet (i-line) irradiation, the lens original layer 15 is selectively exposed.

  Next, in the step shown in FIG. 10B, a pattern is formed on the lens prototype layer 15 by developing with a water-soluble alkaline developer.

  Next, in the step shown in FIG. 11A, baking is performed at a temperature of 135 ° C. to 200 ° C. for 2 to 5 minutes so that the surface of the lens prototype layer 15 is made convex by using the surface tension of the novolac resin. A curved surface.

Next, in the step shown in FIG. 11B, the shape of the lens prototype layer 15 is transferred to the microlens 11 by performing etch back by dry etching. This dry etching is performed under the condition that the etching rates of the lens original layer 15 and the microlens 11 are substantially equal, for example, a mixed gas of CF ₄ and O ₂ . In addition, by depositing a CF-based deposit on the side surface of the microlens 11 during the dry etching, the lens gap of the transferred microlens 11 is made smaller than the lens gap of the lens prototype layer 15.

  In the solid-state imaging device created by the manufacturing method of the present embodiment, when the oblique light a is incident on the microlens 11, it passes through the color filter 8b after passing through the microlens 11 and the flattening film 10, for example. The light a is reflected or multiple-reflected on the side wall of the color filter 8b (the boundary between the color filter 8b and the gap 9) and enters the light receiving unit 2 disposed below the color filter 8b. Alternatively, the light a refracted without being reflected by the side wall of the color filter 8b reaches the light shielding film 5 or the like, and therefore does not enter the other adjacent light receiving portions 2. Therefore, it is difficult for oblique light to enter each light receiving unit 2, and color mixing caused by oblique light is less likely to occur.

  In addition, the area of the microlens can be set as large as possible without increasing the cell size.

(Eighth embodiment)
A method for manufacturing the solid-state imaging device according to the eighth embodiment of the present invention will be described below. Here, a case where a CCD solid-state imaging device is manufactured is illustrated, but the present invention is not limited to a CCD solid-state imaging device but can be applied to a MOS solid-state imaging device or the like.

  12A to 12C are cross-sectional views illustrating manufacturing steps of the solid-state imaging device according to the eighth embodiment of the present invention. Note that the manufacturing method of the present embodiment is a method of manufacturing the solid-state imaging device according to the second embodiment.

  In the method for manufacturing the solid-state imaging device in the present embodiment, the same steps as those shown in FIGS. 8A to 8C described in the seventh embodiment are performed. Then, after forming the gap 9 between the color filters 8a, 8b, and 8c in the step shown in FIG. 8C, in the step shown in FIG. The low refractive index layer 12 made of is applied and thermosetting is performed.

  Next, in the step shown in FIG. 12 (b), an acrylic resin (not shown) is applied on the color filters 8a, 8b, 8c and the low refractive index layer 12, and cured by heat, thereby planarizing the film. 10 is formed.

  Next, in the step shown in FIG. 12C, a resin (not shown) such as a novolac resin, a polyimide resin, or an acrylic resin is supplied to the entire surface of the wafer by supplying it at a main rotation of 1500 to 3000 rpm for 30 seconds. Thereafter, prebaking is performed at a temperature of 80 to 100 ° C. for 30 to 80 seconds. Thereafter, selective exposure is performed by irradiating ultraviolet rays (i rays) from above a photomask (not shown). Thereafter, development is performed using a water-soluble alkaline developer, and baking is further performed at a temperature of 135 ° C. to 200 ° C. for 2 to 5 minutes. Thus, the lens 11 having a convex lens-shaped surface is formed using the surface tension of the novolac resin.

  In the solid-state imaging device created by the manufacturing method of the present embodiment, when the oblique light a is incident on the microlens 11, it passes through the color filter 8b after passing through the microlens 11 and the flattening film 10, for example. The light a is reflected or multiple-reflected on the side wall of the color filter 8b (the boundary between the color filter 8b and the low refractive index layer 12), and enters the light receiving unit 2 disposed below the color filter 8b. Alternatively, the light a refracted without being reflected by the side wall of the color filter 8b reaches the light shielding film 5 or the like, and therefore does not enter the other adjacent light receiving portions 2. Therefore, it is difficult for oblique light to enter each light receiving unit 2, and color mixing caused by oblique light is less likely to occur.

In addition, the area of the microlens can be set as large as possible without increasing the cell size.
Note that the microlens may be formed by a dry etching method as described in the first embodiment.
Furthermore, in the present embodiment, the case where the low refractive index layer is formed after the gap 9 is formed has been described. However, in the present invention, the organic pigment layer can also be formed by vapor deposition.

(Ninth embodiment)
A method for manufacturing the solid-state imaging device according to the ninth embodiment of the present invention will be described below. Here, a case where a CCD solid-state imaging device is manufactured is illustrated, but the present invention is not limited to a CCD solid-state imaging device but can be applied to a MOS solid-state imaging device or the like.

  FIG. 13A to FIG. 14B are cross-sectional views illustrating manufacturing steps of the solid-state imaging device according to the ninth embodiment of the present invention. Note that the manufacturing method of the present embodiment is a method of manufacturing the solid-state imaging device shown in FIG.

  In the method of manufacturing the solid-state imaging device according to the present embodiment, first, the same process as the process shown in FIG. 8A is performed in the process shown in FIG.

  Next, in the step shown in FIG. 13B, a negative pigment resist is applied to the entire surface. The coating conditions are 3 to 5 cc and spinner main rotation 1500 to 3000 rpm is performed in 30 seconds. After this coating, pre-baking is performed at a temperature of 80 to 100 ° C. for 30 to 80 seconds. Then, selective exposure is performed by irradiating ultraviolet rays (i rays) from above a photomask (not shown). Then, it develops with a water-soluble alkali developing solution, and the 1st color filter 8a is formed by performing thermosetting for 2 to 5 minutes at the temperature of 180 to 250 degreeC. When the exposure is performed, the first color filter 8a is formed into an inversely tapered shape by defocusing the focus.

  Next, the second color filter 8b is formed in the step shown in FIG. 14A under the same conditions as those for forming the first color filter 8a, and the third color filter 8b is formed in the step shown in FIG. 14B. A color filter 8c is formed.

  In the solid-state imaging device created by the manufacturing method of the present embodiment, when the oblique light a is incident on the microlens 11, it passes through the color filter 8b after passing through the microlens 11 and the flattening film 10, for example. The light a is reflected or multiple-reflected on the side wall of the color filter 8b (the boundary between the color filter 8b and the gap 9) and enters the light receiving unit 2 disposed below the color filter 8b. Alternatively, the light a refracted without being reflected by the side wall of the color filter 8b reaches the light shielding film 5 or the like, and therefore does not enter the other adjacent light receiving portions 2. Therefore, it is difficult for oblique light to enter each light receiving unit 2, and color mixing caused by oblique light is less likely to occur.

  In addition, the area of the microlens can be set as large as possible without increasing the cell size.

(Tenth embodiment)
A method for manufacturing the solid-state imaging device according to the tenth embodiment of the present invention will be described below. Here, a case where a CCD solid-state imaging device is manufactured is illustrated, but the present invention is not limited to a CCD solid-state imaging device but can be applied to a MOS solid-state imaging device or the like.

  FIG. 15A to FIG. 17B are cross-sectional views illustrating manufacturing processes of the solid-state imaging device according to the tenth embodiment of the present invention.

In the manufacturing method of the present embodiment, first, in the step shown in FIG. 15A, a plurality of light receiving portions 2 formed on the semiconductor substrate 1 and arranged in a matrix, and a plurality of light receiving portions 2 in the semiconductor substrate 1 are formed. A plurality of transfer electrodes 3 positioned on adjacent regions; an insulating film 4 interposed between the semiconductor substrate 1 and the transfer electrode 3 and covering the transfer electrode 3; and the transfer electrodes 3 and 4 A light-shielding film 5 that covers the upper and side surfaces of the light-transmitting electrode and prevents light from entering the transfer electrode 3, and a transparent flat film 6 for flattening the step between the light-receiving unit 2 and the transfer electrode 3 to a certain value or less. And form. The transparent flat film 6 is made of a material having high light transmittance. For example, a transparent planarization film 6, and an inorganic film such as BPSG or SiO _2, polyimide resins, epoxy resins, acrylic resins, polyurethane resins, may be used a resin film such as a phenolic resin or a silicone resin. In the case of using a resin film, it may be heat-cured after coating the resin film on the substrate. In this case, the heat-curing may be performed at a temperature of 180 to 250 ° C. for 2 to 5 minutes. Moreover, it is preferable that the film thickness of a resin film is about 0.5-5.0 micrometers.

  Subsequently, after applying a transparent resin film (not shown) having a film thickness of 0.05 μm to 0.3 μm on the transparent flat film 6, heat treatment is performed at a temperature range of 180 to 250 ° C. for 2 to 5 minutes. Thereby, the color filter base film 7 is formed. The color filter base film 7 has good compatibility such as adhesion to a color filter to be formed later (shown in FIG. 15B, etc.), hardly generates a development residue, and has high optical transmittance. It is preferable to use a transparent resin.

  Next, in the step shown in FIG. 15B, a negative pigment resist (not shown) is applied to the entire color filter base film 7. This application is performed, for example, by continuously supplying a chemical solution of 3 to 5 cc per second for 30 seconds under the condition of spinner main rotation 1500 to 3000 rpm. After the negative pigment resist is applied, prebaking is performed at a temperature of 80 to 100 ° C. for 30 to 80 seconds. After this pre-baking, ultraviolet rays (i-line) are selectively exposed using a photomask (not shown). After the exposure, development is performed using a water-soluble alkaline developer, and the first color filter 8a is formed by post-baking at a temperature of 180 to 250 ° C. for 2 to 5 minutes to thermally cure the negative pigment resist. To do. The first color filter 8 a is formed above any one of the plurality of light receiving units 2. Then, the second color filter 8b or the third color filter 8c is formed above the other ones of the plurality of light receiving units 2 by the same method as the method of forming the first color filter 8a.

  Next, in the step shown in FIG. 15C, in order to reduce the respective steps in the first color filter 8a, the second color filter 8b, and the third color filter 8c, the entire upper surface of these color filters 8a to 8c. An acrylic resin (not shown) is applied to the substrate. And after pre-baking for 30 to 80 seconds at a temperature of 80 to 100 ° C., post-baking at a temperature of 180 to 250 ° C. for 2 to 5 minutes to thermally cure the acrylic resin, a transparent flat film 21 is formed.

  Next, in the step shown in FIG. 16A, a high refractive index sheet material (not shown) containing a carbodiimide group having a film thickness of 0.5 to 2.0 μm is applied to the entire surface of the wafer, and a temperature of 180 to 250 ° C. Heat treatment for 2 to 5 minutes. Thereby, the lens layer 22 is formed by thermosetting the sheet member. In addition, as a sheet material, a thermosetting sheet such as a polyimide resin or a phenol resin may be used instead of a sheet containing a carbodiimide group. In addition, as a high refractive index sheet material, it is preferable to use a material having a refractive index of 1.6 or more.

  Next, in the step shown in FIG. 16B, a resist film (not shown) made of novolak resin or the like is applied to the entire surface of the wafer by continuously supplying it for 30 seconds under the condition of main rotation of 1500 to 3000 rpm. Thereafter, prebaking is performed at a temperature of 80 to 100 ° C. for 30 to 80 seconds. Thereby, the lens original layer 23 having a film thickness of 0.5 to 2.0 μm is formed.

  Thereafter, the lens original layer 23 is selectively exposed by irradiating ultraviolet rays (i rays) from above the photomask 24.

  Thereafter, in the step shown in FIG. 16C, development is performed using a water-soluble alkaline developer, thereby removing unnecessary portions of the lens prototype layer 23 and separating the lens prototype layer 23 into a plurality of layers. To do.

  Thereafter, baking is performed at a temperature of 135 to 200 ° C. for 2 to 5 seconds in the step shown in FIG. When such baking is performed, the surface of the lens prototype layer 23 has a convex lens-like curvature due to the surface tension of the novolac resin.

Next, the lens original layer 23 is transferred to the lens layer 22 in the step shown in FIG. This transfer is performed by etch back by dry etching, and is performed under the condition that the etching rates of the lens original layer 23 and the lens layer 22 are substantially equal. For example, this dry etching is performed with a mixed gas of CF ₄ and O ₂ . In the case of using this mixed gas, etching is performed while depositing a CF-based deposit on the side surface of the lens prototype layer 23, so that the adjacent lens prototype layer 23 has a distance (lens gap) between adjacent lens prototypes. The distance between the layers 22 is reduced.

  In the present embodiment, since the lens layer 22 is formed from a sheet-like material, it is not necessary to dilute the lens layer material with a solvent to form a varnish as in the prior art. Therefore, the storage stability of the lens layer 22 can be improved. Furthermore, it is possible to prevent the electron density of the lens layer 22 from being lowered and the refractive index from being lowered.

(Other embodiments)
The solid-state imaging device described in the first to sixth embodiments can be applied to a digital camera.

  FIG. 18 is a block diagram showing a schematic configuration of a digital camera using the solid-state imaging device of the present invention. As shown in FIG. 18, the digital camera of the present invention includes a solid-state imaging device 30, an optical system 31 including a lens for imaging incident light from a subject on the imaging surface of the solid-state imaging device 30, and solid-state imaging. A control unit 32 that controls driving of the device 30, an image processing unit 33 that performs various signal processing on an output signal from the solid-state imaging device 30, and a display 34 that displays an image signal processed by the image processing unit 33. And an image memory 35 for storing the image signal processed by the image processing unit 33.

  In the digital camera using the solid-state imaging device of the present invention, color mixing is prevented. Therefore, a digital camera with excellent image quality can be realized at low cost.

  Note that the digital camera according to the present invention may be any one of a still camera capable of capturing only a still image, a video camera capable of capturing a moving image, and a camera capable of capturing both a still image and a moving image.

  The present invention has high industrial applicability in that a solid-state imaging device having an on-chip filter capable of preventing color mixing from adjacent pixels due to oblique light can be provided even with a fine pixel size.

  In addition, the present invention has high industrial applicability because it can be applied to a solid-state imaging device mounted on a sensor unit such as a CCD or MOS sensor, a digital video camera, a digital still camera, a mobile phone with a camera, or the like.

It is sectional drawing which shows the structure of the solid-state imaging device which concerns on 1st Embodiment. It is sectional drawing which shows the structure of the solid-state imaging device which concerns on the modification of 1st Embodiment. It is sectional drawing which shows the structure of the solid-state imaging device which concerns on 2nd Embodiment. It is sectional drawing which shows the structure of the solid-state imaging device which concerns on 3rd Embodiment. It is sectional drawing which shows the structure of the solid-state imaging device which concerns on 4th Embodiment. It is sectional drawing which shows the structure of the solid-state imaging device which concerns on 5th Embodiment. It is sectional drawing which shows the structure of the solid-state imaging device which concerns on 6th Embodiment. (A)-(c) is sectional drawing which shows the manufacturing process of the solid-state imaging device concerning the 7th Embodiment of this invention. (A), (b) is sectional drawing which shows the manufacturing process of the solid-state imaging device concerning the 7th Embodiment of this invention. (A), (b) is sectional drawing which shows the manufacturing process of the solid-state imaging device concerning the 7th Embodiment of this invention. (A), (b) is sectional drawing which shows the manufacturing process of the solid-state imaging device concerning the 7th Embodiment of this invention. (A)-(c) is sectional drawing which shows the manufacturing process of the solid-state imaging device concerning the 8th Embodiment of this invention. (A), (b) is sectional drawing which shows the manufacturing process of the solid-state imaging device concerning the 9th Embodiment of this invention. (A), (b) is sectional drawing which shows the manufacturing process of the solid-state imaging device concerning the 9th Embodiment of this invention. (A)-(c) is sectional drawing which shows the manufacturing process of the solid-state imaging device concerning the 10th Embodiment of this invention. (A)-(c) is sectional drawing which shows the manufacturing process of the solid-state imaging device concerning the 10th Embodiment of this invention. (A), (b) is sectional drawing which shows the manufacturing process of the solid-state imaging device concerning the 10th Embodiment of this invention. It is a block diagram which shows schematic structure of the digital camera using the solid-state imaging device of this invention. It is sectional drawing which shows typically the structure of the conventional color solid-state imaging device.

Explanation of symbols

1 Semiconductor substrate
2 Light receiver
3 Transfer electrode
4 Insulating film
5 Shading film
6 Transparent flat film
7 Color filter base film
8a, 8b, 8c Color filter
9 Clearance
10 Planarization film
11 Microlens
12 Low refractive index layer
13 Organic pigment layer
14 patterns
15 Lens prototype layer
16 Photomask
30 Solid-state imaging device
31 Optical system
32 Control unit
33 Image processing section
34 display
35 Image memory
91 Color solid-state imaging device
93 First color filter
96a to 96c light shielding film
97 Antifouling film
98 Dye-proof film
99 Dye-proof film

Claims (7)

A semiconductor substrate;
A plurality of light receiving elements formed in a matrix on the semiconductor substrate;
A plurality of color filter layers formed on each of the plurality of light receiving elements;
A planarization film formed on the plurality of color filter layers;
A solid-state imaging device comprising a plurality of light condensing means formed on each of the plurality of light receiving elements and on the planarizing film;
A gap where a gas exists is formed between each of the plurality of color filter layers,
The solid-state imaging device, wherein the planarizing film is also formed on the gap. The semiconductor substrate is part of a chip,
In the central portion of the chip, the side surface of the gap is perpendicular to the upper surface of the semiconductor substrate, and in the portion of the chip located outside the central portion, the side surface of the gap is the upper surface of the semiconductor substrate. 2. The solid-state imaging device according to claim 1, wherein the solid-state imaging device is inclined in a direction from the vertical direction to the central portion as the distance from the upper surface of the semiconductor substrate increases. Further comprising a base film formed on the lower surface of the color filter;
The solid-state imaging device according to claim 1, wherein the gap is also formed in the base film.   The solid-state imaging device according to claim 1, wherein the light collecting unit includes a carbodiimide group.   The solid-state imaging device according to claim 1, wherein the light condensing unit is a polyimide resin.   The solid-state imaging device according to claim 1, wherein the light collecting unit is a phenol resin.   The camera provided with the solid-state imaging device of any one of Claims 1-6.

Images