JP2006196626A - Solid-state imaging device, its manufacturing method and camera - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a solid-state imaging device having an on-chip filter at a lower cost which prevents the color mixing from adjacent pixels due to oblique light. <P>SOLUTION: To prevent the color mixing, the solid-state imaging device 10 comprises a plurality of photodiodes 2 formed in matrix on a semiconductor substrate 1; color filters 4-6 corresponding to the plurality of photodiodes 2 one to one, each having any spectrum characteristics among a plurality of color spectrum characteristics: in-layer lenses 13, corresponding to the plurality of photodiodes one to one, each formed above the photodiode 2 and below the color filter 4-6; and attenuation layers 15 formed between the lenses 13 in the same layer as the in-layer lens 13 for attenuating at least a part of a light wavelength region. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

  The present invention relates to a solid-state imaging device including a color on-chip filter, a manufacturing method thereof, and a camera including the solid-state imaging device.

  Conventionally, a solid-state imaging device is used in various image input devices such as a video camera, a digital still camera, and a facsimile.

  The solid-state imaging device has a photoelectric conversion unit that converts light into electric charge, and is roughly classified into a CCD (Charge-Coupled Devices) solid-state imaging device and a MOS (Metal Oxide Semiconductor) solid-state imaging device.

  As these solid-state imaging devices, color solid-state imaging devices including color filters are also known. For example, a conventional color solid-state imaging device has a primary color filter composed of a combination of red (R), blue (B), and green (G), or cyan (C), magenta (M), yellow (Y), green ( G) are classified into two types of complementary color filters composed of combinations. Then, the light receiving surfaces of the light receiving elements that are two-dimensionally arranged on the solid-state imaging device are stacked in a predetermined pattern so that one color corresponds to one light receiving element. As described above, the color filter stacked on the light receiving surface of the light receiving element is generally referred to as an “on-chip filter”.

  However, the incident light on the light receiving surface of the color solid-state imaging device is not necessarily perpendicular to the light receiving surface and parallel to each other. When light incident from an oblique direction with respect to the light receiving surface transmits obliquely through one color filter and enters an adjacent light receiving element, color mixing occurs.

  On the other hand, for example, as shown in FIG. 18, a color solid in which black light shielding films 96a to 96c are provided at the boundary (pixel boundary) of the light receiving pixel region formed by the photodiode 92 (PD). An imaging device 91 has been proposed (see, for example, Patent Document 1).

As shown in FIG. 18, the solid-state imaging device 90 is manufactured through the following steps.
First, a light-shielding film 96a is formed at a pixel boundary portion on the imaging surface of the solid-state imaging device 90 by patterning a dyeable resin to a predetermined film thickness and dyeing with a black dye.

  Subsequently, a color filter (R) 93 is formed by patterning and dyeing a dyeable resin in a predetermined region among the regions partitioned by the light shielding film 96a.

  Subsequently, a transparent dye-proof film 97 is formed on the light-receiving surface on which the light-shielding film 96a and the color filter 93 are formed, and a dyeable resin is patterned to a predetermined film thickness on the pixel boundary portion thereon. Then, the light shielding film 96b is formed by dyeing with a black dye. Next, a color filter (G) 94 is formed by patterning and dyeing a dyeable resin in a predetermined region among the regions partitioned by the light shielding film 96b.

  Further, in the same manner as described above, a transparent dye-proof film 98, a light-shielding film 96c, and a color filter (B) 95 are formed, and finally a transparent dye-proof film 99 is formed as a protective layer.

In this way, by forming the black light shielding films 96a to 96c at the pixel boundary portions, for example, the light incident obliquely to the B color filter 95 and transmitted therethrough is blocked by the light shielding films 96a to 96c. It does not enter the adjacent photodiode 92. Thereby, it is possible to prevent color mixing due to oblique light.
Japanese Patent Publication No. 8-8344 (pages 3-4, FIGS. 1-3)

  However, in the prior art, (1) formation of a black light-shielding film, (2) formation of a first color filter, (3) formation of a stain-proof film, (4) formation of a black light-shielding film, 5) Formation of a second color filter, (6) Formation of a stain-proof film, (7) Formation of a black light-shielding film, (8) Formation of a third color filter, (9) Formation of a protective layer There is a problem that this process is required.

  Therefore, the present invention has been made in view of the above problems, and an object thereof is to provide a solid-state imaging device having an on-chip filter that can prevent color mixing from adjacent pixels due to oblique light by a simpler manufacturing process. And

  In order to achieve the above object, a solid-state imaging device according to the present invention corresponds to (a) a plurality of light receiving portions formed in a matrix on a semiconductor substrate, and (b) each of the plurality of light receiving portions, A color filter having any one of the spectral characteristics of a plurality of colors; and (c) formed above each light receiving unit and below each color filter corresponding to each of the plurality of light receiving units. And (d) an attenuation layer formed in the same layer as the intra-layer lens and between the intra-layer lenses. .

  As a result, when oblique light that has passed through a color filter of a certain pixel (for example, R or B) enters the attenuation layer (for example, G), the color of the color filter and the attenuation layer are different from each other. . Thereby, it is possible to drastically reduce color mixing from adjacent pixels due to oblique light. Since a conventional black light-shielding film is unnecessary, the manufacturing process is simplified, and a lower-cost solid-state imaging device can be provided.

  Furthermore, the attenuation layer may be made of the same material as the color filter having one of the spectral characteristics of the plurality of colors.

  As a result, the attenuation layer is formed of at least the same color filter of the color filter layer, and the manufacturing process of the black light-shielding film as in the prior art is unnecessary, thereby simplifying the manufacturing process. A lower-cost solid-state imaging device can be provided.

Furthermore, it may be formed of a colored photoresist material.
Thus, if the color filter layer is formed of a colored photoresist, it can be manufactured without requiring a dyeing process, and therefore the manufacturing cost can be further reduced.

The attenuation layer may be black.
Further, the incident light may be attenuated over the entire visible light band.

  Further, the color filter is formed on the inner lens by a red / green / blue primary color Bayer arrangement, a red / green / blue primary color stripe arrangement, or a cyan / magenta / yellow / green complementary color difference sequential arrangement. It may be done. Here, the attenuation layer is preferably green.

The height of the attenuation layer may be lower than the height of the intralayer lens.
Further, the attenuation layer may be formed so as to be in contact with the inner lens and fill between the inner lenses. Furthermore, a plurality of microlenses may be formed above the color filter so as to correspond to each of the plurality of light receiving units.

  In order to achieve the above object, a method of manufacturing a solid-state imaging device according to the present invention includes: (a) a step of forming a plurality of light receiving portions in a matrix on a semiconductor substrate; and (b) a step of forming each of the plurality of light receiving portions. Correspondingly, a step of selectively forming a color filter having any one of the spectral characteristics of a plurality of colors, and (c) corresponding to each of the plurality of light receiving parts, above each light receiving part, And a step of forming an in-layer lens below each color filter; (d) attenuating at least a part of the light wavelength region, and attenuating in the same layer as the in-layer lens and between the in-layer lenses. Forming a layer.

  As a result, a solid-state imaging device that can prevent color mixing from adjacent pixels due to oblique light can be manufactured. That is, in this solid-state imaging device, when oblique light that has passed through a color filter of a certain pixel enters the attenuation layer, the color filter and the color filter that is the attenuation layer are different from each other. As a result, color mixing due to oblique light can be drastically reduced.

  Further, the attenuation layer may be formed of the same material as the color filter having any one of the spectral characteristics of the plurality of colors.

  Furthermore, the manufacturing method of the solid-state imaging includes a step of patterning the dyeable resin between the formation of the attenuation layer using the dyeable resin and the selective formation of the color filter. And dyeing the patterned dyeable resin.

  Furthermore, it is preferable that the manufacturing method of the solid-state imaging device includes a step of infiltrating the fixing liquid after dyeing the dyeable resin. This is because a stain-proof film is unnecessary, so that the manufacturing process can be simplified and the on-chip filter can be made thin.

  In the step of forming the attenuation layer, the attenuation layer may be formed by photolithography using a gray tone mask.

  As described above, according to the present invention, it is possible to provide a solid-state imaging device having an on-chip filter that can prevent color mixing from adjacent pixels due to oblique light at a low cost with a simple process. Further, unlike the conventional example, it is not necessary to provide a light shielding film between the color filters by photolithography or the like, so that the pixels can be miniaturized.

(Embodiment 1)
Embodiment 1 of the present invention will be described below with reference to the drawings.

  The solid-state imaging device according to the first embodiment of the present invention corresponds to each of (a) a plurality of light receiving portions formed in a matrix on a semiconductor substrate, and (b) a plurality of light receiving portions, and a multi-color spectroscopic device. A color filter having a spectral characteristic of any one of the characteristics; and (c) an intra-layer lens formed above each light receiving part and below each color filter corresponding to each of the plurality of light receiving parts. (D) Attenuating at least a part of the light wavelength region, and including an attenuation layer formed in the same layer as the inner lens and between the inner lenses.

  Based on the above points, the solid-state imaging device according to Embodiment 1 will be described. Here, as an example, a case where the present invention is applied to a CCD solid-state imaging device will be described. However, the present invention can be applied not only to a CCD solid-state imaging device but also to a MOS solid-state imaging device.

First, the configuration of the solid-state imaging device according to Embodiment 1 will be described.
As shown in FIG. 1, the solid-state imaging device 10 has a color filter layer based on a Bayer array. As an example, G (green) color filter 4 is used for 2 pixels on the diagonal line of 4 pixels of 2 × 2 in the vertical direction, R (red) color filter 6 is used for one of the remaining 2 pixels, and the remaining 1 Assume that a B (blue) color filter 5 is arranged in a pixel.

  As shown in FIG. 2, the solid-state imaging device 10 includes a semiconductor substrate 1, a plurality of photodiodes 2 formed in a matrix on the semiconductor substrate 1, and a transfer electrode 9.

  Here, a configuration for three pixels in the column direction is shown so that the relationship between adjacent pixels can be easily understood.

  2A is a cross-sectional view in the direction of the arrow when the solid-state imaging device shown in FIG. 1 is cut along the line aa ′, and FIG. 2B is cut along the line bb ′. It is sectional drawing of the arrow direction in a case.

  The transfer electrode 9 is provided on the semiconductor substrate 1 via the insulating film 12 so as to be adjacent to the photodiode 2.

  A light shielding film 11 is provided on the upper surface and side surfaces of the insulating film 12. As a result, it is possible to prevent light from entering the charge transfer portion under the transfer electrode 9 and the transfer electrode 9.

  Further, a first flat film 3 is provided on the upper layer of the semiconductor substrate 1 on which the photodiode 2 and the transfer electrode 9 are formed. Here, as an example, the first flat film 3 is made of a transparent acrylic resin.

  Then, as shown in FIG. 2, an upper convex inner lens 13 is provided on the upper layer of the first flat film 3 so as to be positioned above the photodiode 2, and between the adjacent inner lenses 13. An attenuation layer 15 is provided. Further, a second flat film 14 is provided above the inner lens 13 and the attenuation layer 15, and a color filter layer is formed thereon. Here, as an example, it is assumed that the second flat film 14 is made of an acrylic resin. Further, it is assumed that the attenuation layer 15 is made of a color filter having any one of the spectral characteristics of a plurality of colors.

  As shown in FIG. 2 (a), the color filter layers are arranged on the upper layer of the first flat film 3 in the Bayer array GB row so that the positions of the color filters 4 and 5 correspond to the respective photodiodes 2. The G (green) color filter 4 and the B (blue) color filter 5 are alternately provided. Similarly, as shown in FIG. 2B, in the Bayer array GR row, the positions of the color filters 4 and 6 are aligned with the upper layer of the first flat film 3 corresponding to each photodiode 2. , G (green) color filters 4 and R (red) color filters 6 are alternately provided.

  Further, a third flat film 7 is provided on an upper layer of the color filter layer including the G (green) color filter 4, the B (blue) color filter 5, and the R (red) color filter 6. A microlens 8 for condensing incident light on each photodiode 2 is provided on the third flat film 7 so as to be aligned with each photodiode 2. Here, as an example, the third flat film 7 is made of a transparent acrylic resin.

Next, a case where oblique light is incident on the solid-state imaging device 10 will be described.
As shown in FIG. 3, for example, a case where light transmitted through the R (red) color filter 6 is incident on the photodiode 2 immediately below the G (green) color filter 4 is considered. In this case, the oblique light transmitted through the R (red) color filter 6 is incident on the attenuation layer 15 provided between the inner lenses 13.

  Here, if the attenuation layer 15 is colorless and transparent, the light transmittance is usually 90%. Accordingly, the oblique light transmitted through the R (red) color filter 6 is transmitted through the attenuation layer 15 and is incident on the photodiode 2 positioned below the G (green) color filter 4.

  On the other hand, the attenuation layer 15 of the solid-state imaging device 10 includes a color filter having any one of the spectral characteristics of a plurality of colors. For example, the transmittance can be suppressed by using a color filter that suppresses the transmittance of the attenuation layer 15 to about 30% particularly for the R (red) color. Furthermore, if the attenuation layer 15 is a black color filter, the transmittance can be reduced to approximately 0%.

  As a result, the oblique light transmitted through the R (red) color filter 6 is attenuated by the attenuation layer 15, and the amount of light incident obliquely on the photodiode 2 positioned below the G (green) color filter 4 is greatly reduced. Therefore, it is possible to realize a high-quality reproduced image by preventing color mixing.

  On the other hand, since the vertical light passing through the G (green) color filter 4 and passing through the inner lens 13 enters the photodiode 2 without being attenuated, the transmitted light amount is not impaired.

  Although the oblique light transmitted through the R (red) color filter 6 has been described, the same applies to the oblique light transmitted through the G (green) color filter 4.

  Moreover, although the structure provided with the microlens 8 for condensing incident light to each photodiode 2 was demonstrated, even when it does not have the microlens 8, the same color mixing prevention effect can be acquired.

(Embodiment 2)
Next, Embodiment 2 according to the present invention will be described with reference to the drawings.

  The solid-state imaging device according to Embodiment 2 of the present invention is characterized in that the attenuation layer is composed of any one of R (red), G (green), and B (blue) color filters.

  Based on the above points, the solid-state imaging device according to the second embodiment will be described. In addition, about the component same as the component in Embodiment 1, the same code | symbol is attached | subjected and description is abbreviate | omitted.

First, the configuration of the solid-state imaging device according to the second embodiment will be described.
As shown in FIG. 4, the solid-state imaging device 20 is different from the solid-state imaging device 10 in that the solid-state imaging device 20 includes an attenuation layer 25 instead of the attenuation layer 15.

The attenuation layer 25 is made of any one of R (red), G (green), and B (blue) color filters.
Next, a case where oblique light is incident on the solid-state imaging device 20 will be described.

  As shown in FIG. 5, for example, a case where light transmitted through the R (red) color filter 6 enters the photodiode 2 immediately below the G (green) color filter 4 is considered. In this case, the oblique light transmitted through the R color filter 6 is incident on the attenuation layer 25 provided between the inner lenses 13.

  As shown in FIG. 6, the spectral characteristics when the light passes through different color filters are the product of the spectral characteristics of the respective color filters.

  For example, when the attenuation layer 25 is composed of a G (green) color filter, the transmittance of the oblique light transmitted through the R (red) color filter 6 and the attenuation layer 25 is the color of R (red). This is the product of the spectral characteristics of the filter and the G (green) color filter.

  As a result, the transmittance of R (red) that is inherently reduced is significantly reduced, and the amount of light incident obliquely on the photodiode 2 positioned below the G (green) color filter 4 is greatly reduced, thereby preventing color mixing. High-quality playback images can be realized.

  Further, the vertical light that passes through the G (green) color filter 4 and passes through the inner lens 13 enters the photodiode 2 without being attenuated. Further, the color filter transmits the G (green) color filter 4, transmits the attenuation layer 25, and transmits the transmittance of the vertical light incident on the photodiode 2 positioned below the G (green) color filter 4. Are the same color G (green), the transmitted light is incident on the photodiode 2 with almost no attenuation, and the transmitted light quantity is not impaired.

  Similarly, for example, a photodiode that passes through the R (red) color filter 6 (or B (blue) color filter 5), passes through the attenuation layer 25, and is below the G (green) color filter 4. 2, when the thickness of the attenuation layer 25 provided between the intralayer lenses 13 is set to an appropriate thickness, the transmitted light collected by the microlens 8 is Below the R (red) color filter 6 (or B (blue) color filter 5), the light is further condensed by the inner lens 13 with little influence of the attenuation layer 25 composed of the G (green) color filter. It is incident on the photodiode 2 located at.

  As described above, the solid-state imaging device 20 can effectively prevent color mixing from adjacent pixels due to oblique light. In particular, since there is a light amount difference in the oblique light transmitted through the adjacent R (red) color filter 6 and B (blue) color filter 5 in the G (green) pixel, the oblique light is the G (green) color filter 4. The difference in sensitivity between the G in the GR row (hereinafter referred to as Gr) and the G in the GB row (hereinafter referred to as Gb) caused by being incident on the photodiode 2 immediately below is solid-state imaging. The apparatus 20 has an advantage that there is no difference in sensitivity between Gr and Gb in order to effectively prevent color mixing from adjacent pixels due to oblique light.

  It should be noted that a G (green) color filter is used as the attenuation layer 25 so as not to impair the sensitivity of G (green), which has the highest human visibility, and to effectively eliminate the sensitivity difference between Gr and Gb. However, even if color filters of other colors R (red) and B (blue) are used as the attenuation layer 25, color mixture from adjacent pixels due to oblique light can be prevented. In this case, by stacking R (red) and B (blue) color filters in any order, color mixing due to oblique light from adjacent pixels can be prevented equivalently, and a difference in sensitivity between Gr and Gb can be eliminated.

  Next, a method for manufacturing the solid-state imaging device according to Embodiment 2 will be described. Here, a case where a G (green) color filter is used as the attenuation layer 25 will be described.

  First, as shown in FIG. 7, a photodiode 2, an insulating film 12, a transfer electrode 9, a light shielding film 11, a first flat film 3, and an intralayer lens 13 are formed on a semiconductor substrate 1 by a known method. After that, as shown in FIG. 8, a G (green) photoresist is spin-coated, and exposure is performed by masking only between the inner lens 13 and the inner lens 13, followed by development, heat drying, and attenuation. Layer 25 is formed.

  Subsequently, after the attenuation layer 25 is formed, as shown in FIG. 9, the second flat film 14 is formed by using a known method, and the R (red) color filter 6 is formed on the flattened upper surface. A G (green) color filter 4 and a B (blue) color filter 5 are formed in accordance with the positions of the photodiodes 2, and the unevenness after the color filters 4 to 6 are formed thereon is reduced. 3 A flat film 7 is formed. Thereafter, the microlens 8 corresponding to each photodiode 2 is formed, whereby the solid-state imaging device 20 shown in FIG. 4 is completed.

  According to the above manufacturing method, an attenuation layer is formed in three steps: (1) application of G (green) photoresist, (2) masking between the lenses in the layer + exposure, and (3) development + dry curing. be able to. Therefore, as described above, the manufacturing process can be greatly simplified as compared with the conventional configuration having the black light shielding film in the pixel boundary region.

(Other)
Note that the above manufacturing method is merely an example, and various modifications can be made. For example, the attenuation layer 15 composed of the G (green) color filter 4a is a B (blue) color filter 5, an R (red) color filter 6, a black color filter, or a film having a simple light attenuation function. It does not matter.

  Although a method of forming an attenuation layer between upper convex in-layer lenses is described here, as shown in FIG. 10, a downward convex inner lens can be formed in the same manner. First, as shown in FIG. 11, after forming an attenuation layer 35 on the upper layer of the first flat film 3, resist coating and patterning of the lower convex in-layer lens portion are performed. As shown in FIG. A downward convex lens part is formed by reactive etching, and an acrylic film is applied to obtain a structure having a downward convex in-layer lens having an attenuation layer 35 as shown in FIG.

  Thereafter, a flat film, a color filter, and a microlens are formed by a known method, and as shown in FIG. 10, a solid-state imaging device 30 having a downward convex in-layer lens structure having an attenuation layer 35 can be manufactured.

  Further, as a material for the color filter and the attenuation layer, a dyeable resin or the like may be used instead of the above-described colored resist. In the case of using a dyeable resin, a step of infiltrating the fixing liquid after the dyeing step may be added instead of using the dye-resistant film as described above. In this case, since the dyeable resin infiltrated with the fixing liquid is not dyed even if it is subsequently immersed in another dye, there is an advantage that a dyeproof film is not required and the color filter layer is not thickened.

  Further, as shown in FIG. 2, the G (green) attenuation layer 15 is formed thinner than the height of the inner lens. However, the attenuation layer of the present invention is not limited to this specific example. The attenuation layer may be formed at least at a part between the inner lenses. For example, as shown in FIGS. 14 and 15, even if an attenuation layer is formed, an effect of drastically reducing color mixing due to oblique light from adjacent pixels can be achieved.

  The attenuation layer 45 shown in FIG. 14 is formed so that its thickness is lower than the height of the inner lens, and the attenuation layer 55 shown in FIG. 15 is about 1/4 of the height of the inner lens. It is formed so that it may become thickness. The attenuation layer is typically formed by spin coating, but the attenuation layer can be formed to an arbitrary thickness by controlling the number of rotations. The attenuation layer is a photosensitive material resist, preferably styrene, acrylic or epoxy.

In the above description, the configuration in which the basic arrangement of the color filters is the primary color Bayer arrangement is illustrated, but the present invention can also be applied to a color filter having a stripe arrangement of the three primary colors.
Furthermore, the present invention can be implemented by a complementary color filter. As shown in FIG. 16, from the graph 110 of the spectral characteristics of each color of CMYG (cyan, magenta, yellow, and green), in order to reduce color mixture due to oblique light, CMY (cyan, magenta, yellow) The G (green) attenuation layer is effective, but it is not perfect for the same color G, and it is preferable that black is arranged to attenuate the transmitted light amount of all colors.

  In the above-described embodiment, the case where a general organic resist is used for the color filter layer and the attenuation layer has been described. However, it is clear that the effects of the present invention can be obtained regardless of inorganic or organic.

  In the step of forming the attenuation layer, the attenuation layer may be formed by photolithography using a gray tone mask.

  As shown in FIG. 17, when the solid-state imaging device 10 according to Embodiment 1 is applied to a digital camera, a digital camera excellent in image quality can be realized at low cost by preventing color mixing. The same applies to the solid-state imaging device having the attenuation layers 25, 35, 45, 55, and the like.

  Here, the camera controls the solid-state imaging device 10, an optical system 61 including a lens for imaging incident light from a subject on the imaging surface of the solid-state imaging device 10, and control for driving the solid-state imaging device 10. Unit 62, image processing unit 63 that performs various signal processing on the output signal from solid-state imaging device 10, display 64 that displays the image signal processed by image processing unit 63, and processing by image processing unit 63 An image memory 65 or the like for storing the received image signal is provided. Note that this camera may be any one of a still camera capable of capturing only a still image, a video camera capable of capturing a moving image, and a camera capable of capturing both a still image and a moving image.

  The present invention can be used as a solid-state imaging device or the like, particularly as a solid-state imaging device or the like that can prevent color mixing and obtain a high-quality reproduced image.

2 is a diagram illustrating a plan view of the solid-state imaging device according to Embodiment 1. FIG. (A) is a figure which shows the cross section of the arrow direction at the time of cut | disconnecting the solid-state imaging device in Embodiment 1 in the aa 'line | wire, (b) is the case in the case of cut | disconnecting in the bb' line | wire. It is a figure which shows the cross section of an arrow direction. 3 is a diagram illustrating a state in which oblique light is incident on the solid-state imaging device according to Embodiment 1. FIG. (A) is a figure which shows the cross section of the arrow direction at the time of cut | disconnecting the solid-state imaging device in Embodiment 2 in the aa 'line, (b) is the case in the case of cut | disconnecting in the bb' line. It is a figure which shows the cross section of an arrow direction. 6 is a diagram illustrating a state in which oblique light is incident on a solid-state imaging device according to Embodiment 2. FIG. It is a figure which shows the graph of the spectral characteristic of the light of each color of RGB. 6 is a first diagram illustrating a cross section of a solid-state imaging device in one step of the manufacturing method according to Embodiment 2. FIG. FIG. 10 is a second diagram showing a cross section of the solid-state imaging device in one step of the manufacturing method in the second embodiment. FIG. 10 is a third diagram illustrating a cross section of the solid-state imaging device in one step of the manufacturing method according to the second embodiment. It is a figure which shows the cross section of the solid-state imaging device in other embodiment. It is a 1st figure which shows the cross section of the solid-state imaging device in 1 process of the manufacturing method in other embodiment. It is a 2nd figure which shows the cross section of the solid-state imaging device in 1 process of the manufacturing method in other embodiment. It is a 3rd figure which shows the cross section of the solid-state imaging device in 1 process of the manufacturing method in other embodiment. It is a figure which shows the cross section of the solid-state imaging device which has an attenuation layer in other embodiment. It is a figure which shows the cross section of the solid-state imaging device which has an attenuation layer in other embodiment. It is a figure which shows the graph of the spectral characteristic of the light of each color of CMYG. It is a figure which shows schematic structure of a camera provided with the solid-state imaging device which concerns on this invention. It is a figure which shows the cross section of the conventional solid-state imaging device.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor substrate 2 Photodiode 3 1st flat film 4 Color filter (G)
5 Color filter (B)
6 Color filter (R)
7 Third flat film 8 Micro lens 9 Transfer electrode 10, 20, 30 Solid-state imaging device 11 Light shielding film 12 Insulating film 13 In-layer lens 14 Second flat film 15, 25, 35, 45, 55 Attenuating layer 61 Optical system 62 Control Unit 63 Image processing unit 64 Display 65 Image memory

Claims (17)

A plurality of light receiving portions formed in a matrix on a semiconductor substrate;
A color filter corresponding to each of the plurality of light receiving units, and having a spectral characteristic of any one of a plurality of spectral characteristics;
Corresponding to each of the plurality of light receiving portions, an inner lens formed above each light receiving portion and below each color filter,
A solid-state imaging device comprising: an attenuation layer that attenuates at least a part of a light wavelength region and is formed in the same layer as the intra-layer lens and between the intra-layer lenses. The solid-state imaging device according to claim 1, wherein the attenuation layer is made of the same material as the color filter having spectral characteristics of any one of the spectral characteristics of the plurality of colors. The solid-state imaging device according to claim 1, wherein the attenuation layer is formed of a colored photoresist material. The solid-state imaging device according to claim 1, wherein the attenuation layer is green. The solid-state imaging device according to claim 1, wherein the attenuation layer is black. The solid-state imaging device according to claim 1, wherein a height of the attenuation layer is lower than a height of the in-layer lens. The solid-state imaging device according to any one of claims 1 to 6, wherein the attenuation layer is formed so as to be in contact with the inner lens and to fill a space between the inner lenses. The solid-state imaging device according to any one of claims 1 to 3, wherein the color filter is formed in a primary color Bayer array of red, green, and blue above the plurality of intra-layer lenses. 4. The solid-state imaging device according to claim 1, wherein the color filter is formed in a primary color stripe arrangement of red, green, and blue above the plurality of in-layer lenses. 4. The solid-state imaging device according to claim 1, wherein the color filter is formed in a sequential order of complementary color differences of cyan, magenta, yellow, and green above the plurality of intra-layer lenses. . 11. The solid-state imaging device according to claim 1, further comprising a plurality of microlenses formed above the plurality of color filters so as to correspond to each of the plurality of light receiving units. The solid-state imaging device described in 1.   A camera comprising the solid-state imaging device according to claim 1. Forming a plurality of light receiving portions in a matrix on a semiconductor substrate;
A step of selectively forming a color filter corresponding to each of the plurality of light receiving portions and having a spectral characteristic of any one of a plurality of spectral characteristics;
Forming an in-layer lens above each light receiving portion and below each color filter corresponding to each of the plurality of light receiving portions;
And a step of attenuating at least a part of the light wavelength region, and forming an attenuation layer in the same layer as the in-layer lens and between the in-layer lenses. The method for manufacturing a solid-state imaging device according to claim 13, wherein the attenuation layer is formed of the same material as the color filter having spectral characteristics of any one of the spectral characteristics of the plurality of colors. The method for manufacturing the solid-state imaging device further includes forming the attenuation layer using a dyeable resin and then selectively forming the color filter.
Patterning the dyeable resin;
The method of manufacturing a solid-state imaging device according to claim 14, further comprising: dyeing the patterned dyeable resin.   The method for manufacturing a solid-state imaging device according to claim 15, further comprising a step of infiltrating the fixing liquid after the dyeable resin is dyed. The method for manufacturing a solid-state imaging device according to claim 13, wherein in the step of forming an attenuation layer, the attenuation layer is formed by photolithography using a gray-tone mask.

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