JP5147320B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP5147320B2
JP5147320B2 JP2007187762A JP2007187762A JP5147320B2 JP 5147320 B2 JP5147320 B2 JP 5147320B2 JP 2007187762 A JP2007187762 A JP 2007187762A JP 2007187762 A JP2007187762 A JP 2007187762A JP 5147320 B2 JP5147320 B2 JP 5147320B2
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Prior art keywords
wiring
transistor
wirings
tft
shape
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JP2007187762A
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Japanese (ja)
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JP2008046619A (ja
JP2008046619A5 (enExample
Inventor
瑞季 佐藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2007187762A priority Critical patent/JP5147320B2/ja
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Publication of JP2008046619A5 publication Critical patent/JP2008046619A5/ja
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  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
JP2007187762A 2006-07-21 2007-07-19 半導体装置 Active JP5147320B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2007187762A JP5147320B2 (ja) 2006-07-21 2007-07-19 半導体装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006199292 2006-07-21
JP2006199292 2006-07-21
JP2007187762A JP5147320B2 (ja) 2006-07-21 2007-07-19 半導体装置

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP2012069620A Division JP5148000B2 (ja) 2006-07-21 2012-03-26 Ｅｌ表示装置
JP2012258608A Division JP2013083990A (ja) 2006-07-21 2012-11-27 半導体装置

Publications (3)

Publication Number Publication Date
JP2008046619A JP2008046619A (ja) 2008-02-28
JP2008046619A5 JP2008046619A5 (enExample) 2010-06-17
JP5147320B2 true JP5147320B2 (ja) 2013-02-20

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ID=39180360

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2007187762A Active JP5147320B2 (ja) 2006-07-21 2007-07-19 半導体装置

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JP (1) JP5147320B2 (enExample)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103872002B (zh) * 2008-03-05 2017-03-01 伊利诺伊大学评议会 可拉伸和可折叠的电子器件
JP5330520B2 (ja) 2009-09-11 2013-10-30 パナソニック株式会社 アナログ・デジタル変換器、イメージセンサシステム、カメラ装置
JP4801794B2 (ja) * 2009-11-27 2011-10-26 パナソニック株式会社 発光表示装置
CN102804360B (zh) 2009-12-25 2014-12-17 株式会社半导体能源研究所 半导体装置
JP2012019118A (ja) * 2010-07-09 2012-01-26 Casio Comput Co Ltd トランジスタ構造体、トランジスタ構造体の製造方法及び発光装置
JP2012064604A (ja) * 2010-09-14 2012-03-29 Casio Comput Co Ltd トランジスタ構造体、トランジスタ構造体の製造方法及び発光装置
US8928010B2 (en) * 2011-02-25 2015-01-06 Semiconductor Energy Laboratory Co., Ltd. Display device
KR101486038B1 (ko) 2012-08-02 2015-01-26 삼성디스플레이 주식회사 유기 발광 표시 장치
KR102000643B1 (ko) * 2012-12-27 2019-07-16 엘지디스플레이 주식회사 유기발광 표시장치
KR102049444B1 (ko) * 2013-05-10 2019-11-28 삼성디스플레이 주식회사 유기 발광 표시 장치 및 그 유기 발광 표시 장치 제조용 포토 마스크
TWI653755B (zh) 2013-09-12 2019-03-11 日商新力股份有限公司 顯示裝置、其製造方法及電子機器
KR102795816B1 (ko) 2018-03-06 2025-04-16 소니 세미컨덕터 솔루션즈 가부시키가이샤 발광 소자 유닛
US11574983B2 (en) 2018-03-30 2023-02-07 Sharp Kabushiki Kaisha Display device comprising TFT layer and light-emitting element layer
WO2020100384A1 (ja) * 2018-11-16 2020-05-22 株式会社ジャパンディスプレイ 表示装置

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4889872B2 (ja) * 2000-04-17 2012-03-07 株式会社半導体エネルギー研究所 発光装置及びそれを用いた電気器具
JP3939666B2 (ja) * 2002-01-18 2007-07-04 株式会社半導体エネルギー研究所 発光装置及び電子機器
JP4721656B2 (ja) * 2003-11-07 2011-07-13 三洋電機株式会社 画素回路及び表示装置
JP4954527B2 (ja) * 2004-10-14 2012-06-20 株式会社半導体エネルギー研究所 表示装置の作製方法
JP2006337713A (ja) * 2005-06-02 2006-12-14 Seiko Epson Corp 発光装置および電子機器

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JP2008046619A (ja) 2008-02-28

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