JP5143933B2 - Substrate processing apparatus and substrate processing method - Google Patents

Description

  The present invention relates to a substrate processing apparatus and a substrate processing method for cleaning a substrate. Examples of substrates to be processed include semiconductor wafers, liquid crystal display substrates, plasma display substrates, FED (Field Emission Display) substrates, optical disk substrates, magnetic disk substrates, magneto-optical disk substrates, and photomasks. Substrate etc. are included.

  In the manufacturing process of a semiconductor device, contamination of the peripheral portion of the semiconductor wafer may have a non-negligible effect on the processing quality of the semiconductor wafer. Specifically, in a so-called batch processing step, a plurality of semiconductor wafers are immersed in a processing solution in a vertical posture. Therefore, if contaminants adhere to the peripheral edge of the semiconductor wafer, the contaminants are treated. There is a risk of diffusing into the liquid and reattaching to the device formation region on the surface of the semiconductor wafer.

For this reason, recently, there is an increasing demand for cleaning the peripheral portion of a substrate such as a semiconductor wafer.
As a prior art regarding the cleaning of the peripheral portion of the substrate, for example, configurations proposed in Patent Documents 1 to 3 can be given.
In Patent Document 1, a configuration is proposed in which a cylindrical brush is provided and the outer peripheral surface of the brush is brought into contact with the peripheral end surface of the substrate while rotating the substrate, thereby removing contamination on the peripheral end surface of the substrate. Yes.

  In Patent Document 2, in a configuration similar to the configuration proposed in Patent Document 1, regardless of the shape of the peripheral end surface of the substrate, contamination of the peripheral end surface of the substrate can be more satisfactorily removed. A cylindrical brush is pressed on the peripheral end surface to bite the peripheral end surface of the substrate into the outer peripheral surface of the brush, or a groove corresponding to the shape of the peripheral end surface of the substrate is formed in the outer peripheral surface of the brush, and the substrate It has been proposed to fit the peripheral end surfaces.

  Further, in Patent Document 3, a groove capable of fitting the peripheral edge of the substrate is formed on the outer peripheral surface of the cylindrical brush, and the substrate is rotated in a state where the peripheral edge of the substrate is fitted in the groove. A configuration has been proposed in which each peripheral region on the front and rear surfaces of the substrate (annular region having a predetermined width from each peripheral edge on the front and rear surfaces of the substrate) and the peripheral end surface are cleaned by rotating the brush around its central axis. Yes.

JP 2003-197592 A JP 2003-151943 A US Pat. No. 6550091

  However, in the configurations proposed in Patent Documents 1 and 2, since the brush does not contact the peripheral regions on the front and back surfaces of the substrate even if the contamination on the peripheral end surface of the substrate can be removed, the peripheral portions thereof. The contamination of the area cannot be removed.

  On the other hand, in the configuration proposed in Patent Document 3, if the substrate has a certain thickness, each peripheral region of the front surface and the back surface can be cleaned. And each peripheral area | region of a back surface cannot be wash | cleaned favorably. That is, if the thickness of the substrate is larger than a certain thickness, the peripheral edge of the substrate cannot be fitted into the groove of the brush, and if the thickness of the substrate is smaller than the certain thickness, each of the front and back surfaces of the substrate The pressing force of the brush against the peripheral area becomes weak, and each peripheral area cannot be cleaned well.

  SUMMARY OF THE INVENTION An object of the present invention is to provide a substrate processing apparatus and a substrate processing method that can satisfactorily clean the peripheral region and peripheral end surface of at least one surface of the substrate regardless of the thickness of the substrate.

  In order to achieve the above-mentioned object, the invention according to claim 1 includes a substrate holding mechanism (3) for holding the substrate (W) and a flat first cleaning surface (29A) formed using an elastically deformable material. ) And a first peripheral end surface abutting portion (28) formed in a substantially frustoconical shape with the axis perpendicular to the first cleaning surface as a central axis and extending toward the side facing the first cleaning surface. The first peripheral end surface contact portion is connected to a central portion of the large diameter side end surface, and is formed in a substantially truncated cone shape that expands toward the side facing the large diameter side end surface of the first peripheral end surface contact portion. A second peripheral end surface abutting portion (72; 73), and in a direction perpendicular to the central axis of the first peripheral end surface abutting portion from the peripheral end edge on the small diameter side of the first peripheral end surface abutting portion. A side surface of the first peripheral end surface abutting portion that expands toward the side facing the first cleaning surface, wherein the substantially annular belt-shaped portion that expands is the first cleaning surface. The second cleaning surface (29B), and the substantially annular belt-shaped portion around the central portion on the large-diameter end surface of the first peripheral end surface contact portion is defined as the third cleaning surface (74A; 75A), and the second A brush (71) having a side surface of the peripheral end surface contact portion as a fourth cleaning surface (74B; 75B), and a brush moving mechanism (17, 18) for moving the brush with respect to the substrate held by the substrate holding mechanism By controlling the brush moving mechanism, the first cleaning surface and the second cleaning surface are respectively in the peripheral region (14A) and the peripheral end surface (15) of one surface of the substrate held by the substrate holding mechanism. ), And the third cleaning surface and the fourth cleaning surface are held by the substrate holding mechanism so as to be pressed against the peripheral area and the peripheral end surface of one surface of the substrate held by the substrate holding mechanism, respectively. The Control for selectively pressing the first cleaning surface and the second cleaning surface, and the third cleaning surface and the fourth cleaning surface against the peripheral region and the peripheral end surface of the one surface of the substrate A substrate processing apparatus (1) including a portion (41).

In addition, the alphanumeric characters in parentheses represent corresponding components in the embodiments described later. The same applies hereinafter.
According to this configuration, the brush moving mechanism for moving the brush is controlled so that the first cleaning surface of the brush is pressed against the peripheral area of one surface of the substrate, and the second cleaning surface of the brush is pressed against the peripheral end surface of the substrate. It is done. Alternatively, the brush moving mechanism is controlled so that the third cleaning surface of the brush is pressed against the peripheral region of the one surface of the substrate, and the fourth cleaning surface of the brush is pressed against the peripheral end surface of the substrate. Thereby, the peripheral area | region and peripheral end surface of the one surface of a board | substrate can be wash | cleaned simultaneously.

  In addition, the brush is moved to a position corresponding to the thickness of the substrate, and the amount of the brush pressed against the peripheral region of the one surface of the substrate (the brush surface when the first cleaning surface of the brush is pressed against the peripheral region of the one surface of the substrate) The amount of elastic deformation can be made constant. Therefore, regardless of the thickness of the substrate, the pressing force of the brush against the peripheral region on the one surface of the substrate can be ensured, and the peripheral region on the one surface of the substrate can be cleaned well.

In addition, since the first cleaning surface is a flat surface, the pressing force of the brush against the peripheral region on the one surface of the substrate is made the same in the entire contact portion between the first cleaning surface and the peripheral region on the one surface of the substrate. be able to. Therefore, the peripheral region on the one surface of the substrate can be cleaned uniformly.
In addition, since the first cleaning surface does not come into contact with the inner region (central region) of the peripheral region on the one surface of the substrate, the peripheral region to be cleaned with the brush and the central region that does not need to be cleaned are provided. Processing can be performed with distinction, and the accuracy of the cleaning width in the peripheral region on one surface of the substrate can be increased. In particular, when the central region on one surface of the substrate is a device region, the cleaning width in the peripheral region on the one surface of the substrate is required to be accurate. However, damage to the device due to the brush can be avoided.

  In addition, since the second cleaning surface is formed in a shape that expands toward the side facing the first cleaning surface, when pressed against the peripheral end surface of the substrate, the second cleaning surface is elastically deformed and the other side opposite to the one surface of the substrate It wraps around and contacts the peripheral area (14B) of the surface. Therefore, it is possible to clean the peripheral area and peripheral end surface of one surface of the substrate, and it is possible to clean the peripheral area of the other surface of the substrate. That is, it is possible to clean all of the peripheral portion of the substrate (the peripheral region and the peripheral end surface of the one surface and the other surface) at the same time, and the cleaning processing of the peripheral portion of the substrate can be performed efficiently.

  In addition, when the first cleaning surface and the second cleaning surface are worn due to the cleaning of the substrate, or excessive contaminants are accumulated on the first cleaning surface and the second cleaning surface, the third cleaning surface and the fourth cleaning surface. By using the surface, the peripheral region and the peripheral end surface of the one surface and the other surface of the substrate can be cleaned satisfactorily.

  When the central region on one surface of the substrate is a device region and no device is formed on the other surface of the substrate, the cleaning width is high for the peripheral region on the one surface of the substrate as described above. Accuracy is required, and for the peripheral region on the other surface of the substrate, the accuracy of the cleaning width is not as required as on the one surface side. Therefore, particularly in such a case, it is effective to clean the peripheral area of the one surface of the substrate with the first cleaning surface with high precision and to clean the peripheral area of the other surface of the substrate with the second cleaning surface.

  The invention according to claim 2 is the substrate processing apparatus according to claim 1, wherein a width of the first cleaning surface is different from a width of the third cleaning surface.

According to this configuration, since the width of the first cleaning surface and the width of the third cleaning surface are different, the cleaning width in the peripheral region of the one surface of the substrate can be reduced by properly using the first cleaning surface and the third cleaning surface. It can be easily changed.
The invention according to claim 3 is the substrate processing apparatus according to claim 1 or 2, wherein a groove (82) is formed in the fourth cleaning surface.

  According to this configuration, since the groove is formed on the fourth cleaning surface of the brush, the brush can scrape off contaminants that adhere relatively firmly to the peripheral region and the peripheral end surface of the other surface of the substrate. At the same time, the contaminants scraped off from the substrate can be excluded from between the fourth cleaning surface and the substrate through the groove. Therefore, better cleaning of the substrate can be achieved.

The invention according to claim 4 is the substrate processing apparatus according to any one of claims 1 to 3, wherein a groove (82) is formed in the second cleaning surface.
According to this configuration, since the groove is formed on the second cleaning surface of the brush, the brush can scrape off contaminants that adhere relatively firmly to the peripheral region and the peripheral end surface of the other surface of the substrate. At the same time, the contaminants scraped from the substrate can be removed from between the second cleaning surface and the substrate through the groove. Therefore, better cleaning of the substrate can be achieved.

The invention according to claim 5 further includes a brush rotation mechanism (21) for rotating the brush around an axis extending in a perpendicular direction perpendicular to the first cleaning surface. The substrate processing apparatus according to any one of the above.
According to this configuration, the brush is rotated by the brush rotation mechanism in a state where the cleaning surface of the brush is pressed against the peripheral area and the peripheral end surface of the one surface and the other surface of the substrate, thereby the one surface and the other surface of the substrate are rotated. The peripheral region and the peripheral end surface can be scrubbed. Therefore, the peripheral region and the peripheral end surface of the one surface and the other surface of the substrate can be cleaned more satisfactorily.

The invention according to claim 6 further comprises a brush relative movement mechanism (3, 9) for relatively moving the substrate held by the substrate holding mechanism and the brush so that the brush moves in a circumferential direction of the substrate. The substrate processing apparatus according to claim 1, wherein the substrate processing apparatus includes the substrate processing apparatus.
According to this structure, the peripheral area | region and peripheral end surface of the one surface and the other surface of a board | substrate can be efficiently wash | cleaned by the relative movement of a brush and a board | substrate.

The invention according to claim 7 is a processing liquid supply mechanism (4, 5, 10, 11, 11) for supplying a processing liquid to an area inside the peripheral area of at least the one surface of the substrate held by the substrate holding mechanism. The substrate processing apparatus according to claim 1, further comprising: 12).
According to this configuration, it is possible to wash away the contamination in the region inside the peripheral region on the one surface of the substrate with the processing liquid. In particular, when the inner region of the one surface of the substrate is a device forming region and a processing liquid that does not affect the device forming region, such as pure water or functional water, is used as the processing liquid. The treatment liquid also acts as a protective liquid, and can prevent the contaminants removed from the peripheral edge of the substrate by the brush from entering the device formation region and re-contaminating the device formation surface. .

  The invention according to claim 8 is formed by using an elastically deformable material, spreads toward the flat first cleaning surface (29A) and the side facing the first cleaning surface, and is formed on the first cleaning surface. A first peripheral end surface abutting portion (28) formed in a substantially truncated cone shape having a vertical axis as a central axis, and a central portion of a large diameter side end surface of the first peripheral end surface abutting portion; A second peripheral end surface abutting portion (72; 73) formed in a substantially truncated cone shape extending toward the side facing the large diameter side end surface of the first peripheral end surface abutting portion; A substantially annular belt-shaped portion extending from a peripheral edge on the small diameter side of the contact portion in a direction orthogonal to the central axis of the first peripheral end surface contact portion is defined as the first cleaning surface, and is opposed to the first cleaning surface. A side surface of the first peripheral end surface abutting portion that expands toward the side is defined as a second cleaning surface (29B), and a large diameter side end surface of the first peripheral end surface abutting portion is provided. A brush (71) having a substantially annular belt-shaped portion around the central portion as a third cleaning surface (74A; 75A) and a side surface of the second peripheral end surface abutting portion as a fourth cleaning surface (74B; 75B). A substrate processing method for processing a substrate by a substrate holding step of holding a substrate (W) by a substrate holding mechanism (3), and moving the brush to move the first cleaning surface and the second cleaning surface. Are pressed against the peripheral region (14A) and the peripheral end surface (15) of one surface of the substrate held by the substrate holding mechanism, respectively, and the third cleaning surface and the fourth cleaning surface are respectively held by the substrate holding The first surface of the substrate held by the substrate holding mechanism is pressed against the peripheral region and the peripheral end surface of the substrate so as to be pressed against the peripheral region and peripheral end surface of the one surface of the substrate held by the mechanism. And Kiyoshimen and said second cleaning surfaces, characterized in that it comprises a third cleaning surface and the fourth cleaning surface and a selectively pressed brush pressing step (S5), a substrate processing method.

According to this method, in the brush pressing step, the first cleaning surface of the brush is pressed against the peripheral area of the one surface of the substrate, and the second cleaning surface of the brush is pressed against the peripheral end surface of the substrate. Alternatively, in the brush pressing step, the third cleaning surface of the brush is pressed against the peripheral region of the one surface of the substrate, and the fourth cleaning surface of the brush is pressed against the peripheral end surface of the substrate. Thereby, the peripheral area | region and peripheral end surface of the one surface of a board | substrate can be wash | cleaned simultaneously.
In addition, the brush is moved to a position corresponding to the thickness of the substrate, and the amount of the brush pressed against the peripheral region of the one surface of the substrate (the brush surface when the first cleaning surface of the brush is pressed against the peripheral region of the one surface of the substrate) The amount of elastic deformation can be made constant. Therefore, regardless of the thickness of the substrate, the pressing force of the brush against the peripheral region on the one surface of the substrate can be ensured, and the peripheral region on the one surface of the substrate can be cleaned well.

In addition, since the first cleaning surface is a flat surface, the pressing force of the brush against the peripheral region on the one surface of the substrate is made the same in the entire contact portion between the first cleaning surface and the peripheral region on the one surface of the substrate. be able to. Therefore, the peripheral region on the one surface of the substrate can be cleaned uniformly.
In addition, since the first cleaning surface does not come into contact with the inner region (central region) of the peripheral region on the one surface of the substrate, the peripheral region to be cleaned with the brush and the central region that does not need to be cleaned are provided. It can be clearly distinguished and processed. In particular, when the central region on one surface of the substrate is a device region, damage to the device due to the brush can be avoided.

  In addition, since the second cleaning surface is formed in a shape that expands toward the side facing the first cleaning surface, when pressed against the peripheral end surface of the substrate, the second cleaning surface is elastically deformed and the other side opposite to the one surface of the substrate Wrap around and contact the peripheral area of the surface. Therefore, it is possible to clean the peripheral area and peripheral end surface of one surface of the substrate, and it is possible to clean the peripheral area of the other surface of the substrate.

It is a top view which shows schematic structure of the substrate processing apparatus which concerns on one Embodiment of this invention. FIG. 2 is a schematic side view of the inside of the substrate processing apparatus shown in FIG. 1. It is sectional drawing which shows the structure of a holder attaching part, a brush, and a brush holder. It is a block diagram for demonstrating the electrical structure of the substrate processing apparatus shown in FIG. FIG. 2 is a process diagram for explaining wafer processing in the substrate processing apparatus shown in FIG. 1. It is a side view which shows the state of the brush in the process of a wafer. It is a side view which shows the other structure (The structure further provided with the 2nd peripheral end surface contact part and the 3rd peripheral end surface contact part) of a brush. It is a side view which shows other structure (structure by which the groove | channel was formed in the washing | cleaning surface) of the brush. It is a graph which shows the result of the test for confirming the cleaning effect by the brush of various shapes. It is a graph which shows the relationship between the distance from the periphery of the surface of a wafer, and a particle removal rate.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.
FIG. 1 is a plan view showing a schematic configuration of a substrate processing apparatus according to an embodiment of the present invention. FIG. 2 is a schematic side view of the inside of the substrate processing apparatus shown in FIG.

  The substrate processing apparatus 1 is a single-wafer type apparatus that processes a semiconductor wafer W (hereinafter simply referred to as “wafer W”) as an example of a substrate one by one. In the processing chamber 2, the processing liquid is applied to the spin chuck 3 for rotating the wafer W while keeping it substantially horizontal, and the surface of the wafer W (the surface on which the device is formed: the upper surface in this embodiment). A front surface nozzle 4 for supplying, a back surface nozzle 5 for supplying a processing liquid to the back surface (lower surface in the present embodiment) of the wafer W, and a brush mechanism 6 for cleaning the peripheral portion of the wafer W are provided. ing.

  The spin chuck 3 is a vacuum chuck, and is attached to the upper end of the spin shaft 7 extending in a substantially vertical direction, and the back surface (lower surface) of the wafer W in a substantially horizontal posture. An adsorption base 8 for adsorbing and holding, and a spin motor 9 having a rotation shaft coupled coaxially with the spin shaft 7 are provided. Accordingly, when the spin motor 9 is driven in a state where the back surface of the wafer W is sucked and held by the suction base 8, the wafer W rotates around the central axis of the spin shaft 7.

  Treatment liquid supply pipes 10 and 11 are connected to the front surface nozzle 4 and the back surface nozzle 5, respectively. A processing liquid from a processing liquid supply source (not shown) is supplied to these processing liquid supply pipes 10 and 11 via a processing liquid valve 12. The surface nozzle 4 discharges the processing liquid supplied through the processing liquid supply pipe 10 toward the center of the surface of the wafer W held by the spin chuck 3. The back nozzle 5 discharges the processing liquid supplied through the processing liquid supply pipe 11 between the peripheral edge of the back surface of the wafer W held by the spin chuck 3 and the suction base 8.

  Note that pure water is used as the treatment liquid. In addition to pure water, functional water such as carbonated water, ionic water, ozone water, reduced water (hydrogen water) or magnetic water may be used, or ammonia water or a mixture of ammonia water and hydrogen peroxide water. A chemical solution such as a liquid can also be used.

The brush mechanism 6 includes a swing arm 13 that extends substantially horizontally above a position where the wafer W is held by the spin chuck 3, and is held at the tip of the swing arm 13. An annular region having a width of 1 to 4 mm from the peripheral edge of the wafer W, a peripheral region 14B on the back surface of the wafer W (for example, an annular region having a width of 1 to 2 mm from the peripheral edge of the wafer W), and the peripheral end surface 15 are cleaned. And a swing drive mechanism 17 that swings the swing arm 13 in the horizontal direction around a vertical axis set outside the rotation range of the wafer W, and a lift drive mechanism 18 that moves the swing arm 13 up and down. And.
The peripheral portion of the wafer W refers to a portion including at least the peripheral regions 14A and 14B and the peripheral end surface 15 on the front and back surfaces of the wafer W.

  An upper end portion of an arm support shaft 19 extending in the vertical direction is coupled to the base end portion of the swing arm 13. A driving force of the swing driving mechanism 17 is input to the arm support shaft 19. By inputting the driving force of the swing drive mechanism 17 to the arm support shaft 19 and rotating the arm support shaft 19 in a reciprocating manner, the swing arm 13 can be swung around the arm support shaft 19 as a fulcrum. In addition, an elevating drive mechanism 18 is coupled to the arm support shaft 19, and when the elevating drive mechanism 18 moves the arm support shaft 19 up and down, the swing arm 13 is moved up and down integrally with the arm support shaft 19. Can be made.

A brush rotating shaft 20 is rotatably held at the tip end portion (free end portion) of the swing arm 13. The brush rotation shaft 20 extends in the vertical direction and penetrates the lower surface of the tip of the swing arm 13. A brush rotation mechanism 21 for rotating the brush rotation shaft 20 is coupled to the brush rotation shaft 20 inside the swing arm 13. On the other hand, a holder attachment portion 22 is fixed to the lower end portion of the brush rotation shaft 20, and the brush 16 is attached to the holder attachment portion 22 via a brush holder 23.
FIG. 3 is a cross-sectional view illustrating the configuration of the holder mounting portion 22, the brush 16, and the brush holder 23.

  The holder mounting portion 22 is inserted into the center of the brush rotation shaft 20, has a disk-shaped upper surface portion 24 fixed to the brush rotation shaft 20, and a cylindrical side surface extending downward from the periphery of the upper surface portion 24. The unit 25 is integrally provided. On the inner peripheral surface of the side surface portion 25, a screw that can be screwed with a screw formed on a screw portion 36 described later of the brush holder 23 is cut.

  The brush 16 is made of, for example, a sponge material (porous member) formed of an elastically deformable material such as PVA (polyvinyl alcohol) or urethane, and has a substantially disk-shaped base portion 26 and a distal end side of the base portion 26. Provided on the end surface, is connected to a substantially disc-shaped (flat columnar) body portion 27 having a smaller diameter than the base portion 26 and an end surface on the front end side of the body portion 27, and expands toward the front end side (as it goes downward) The first peripheral end surface abutting portion 28 having a substantially truncated cone shape is integrally provided. The base portion 26, the body portion 27, and the first peripheral end surface contact portion 28 have the same center axis, and the brush 16 has a rotationally symmetric shape around the center axis.

In the brush 16, the first cleaning surface 29 </ b> A in which the annular band-shaped portion around the first peripheral end surface contact portion 28 on the end surface on the front end side of the body portion 27 contacts the peripheral region 14 </ b> A on the surface of the wafer W. It has become. Further, the side surface of the first peripheral end surface abutting portion 28 has an upper edge continuous with the first cleaning surface 29A, having an inclination angle of 45 degrees with respect to the vertical direction, and is further away from the central axis of the brush 16 downward. The second cleaning surface 29B is in contact with the peripheral end surface 15 of the wafer W.
The brush holder 23 includes a substantially cylindrical resin block 30 and a fixing member 31 for fixing the brush 16 to the resin block 30.

  A fitting groove 32 having a substantially rectangular cross section is formed on the circumferential surface of one end portion of the resin block 30 over the entire circumference. In addition, a cut groove 33 having a substantially U-shaped cross section is formed in the circumferential direction at one end of the resin block 30 at a position spaced a minute distance radially inward from the fitting groove 32. . Thereby, the part between the fitting groove | channel 32 and the notch groove 33 becomes the elastic piece 34 to which the elasticity by the flexibility of resin was provided. A plurality of hemispherical engagement protrusions 35 are formed on the outer peripheral surface of the elastic piece 34. On the other hand, a flat cylindrical screw portion 36 is integrally formed on the other end surface of the resin block 30. A screw that can be screwed with a screw formed on the holder mounting portion 22 is cut on the peripheral surface of the screw portion 36.

  The fixing member 31 is integrally provided with a disc portion 37 having a substantially circular outer shape and a substantially cylindrical cylindrical portion 38 extending from the periphery of the disc portion 37 to one side. An insertion hole 39 through which the body portion 27 of the brush 16 can be inserted is formed in the central portion of the disc portion 37. The inner diameter of the cylindrical portion 38 substantially coincides with the outer diameter of the base portion 26 of the brush 16, and is formed slightly smaller than the outer diameter of the elastic piece 34 when no external force is applied to the elastic piece 34. . Furthermore, a plurality of engaging recesses 40 that can be engaged with the respective engaging protrusions 35 are formed on the inner peripheral surface of the cylindrical portion 38.

When the brush 16 is attached to the holder attachment portion 22, the brush 16 is attached to the fixing member 31 so that the body portion 27 is inserted into the insertion hole 39 and the base portion 26 is accommodated in the cylindrical portion 38. . Thereafter, the cylindrical portion 38 of the fixing member 31 is fitted into the fitting groove 32 of the resin block 30, and the engagement protrusions 35 and the engagement recesses 40 are engaged. Thereby, the brush 16 is held by the brush holder 23. Then, by attaching the screw portion 36 of the brush holder 23 to the holder attachment portion 22, the attachment of the brush 16 to the holder attachment portion 22 is achieved.
FIG. 4 is a block diagram for explaining the electrical configuration of the substrate processing apparatus 1.

  The substrate processing apparatus 1 includes a control unit 41 including a microcomputer. The controller 41 is connected to a recipe input key 42 for a user to input a process recipe (various conditions for processing the wafer W). Further, the spin motor 9, the processing liquid valve 12, the swing drive mechanism 17, the lift drive mechanism 18, the brush rotation mechanism 21, and the like are connected to the control unit 41 as control targets.

  FIG. 5 is a process diagram for explaining the processing of the wafer W in the substrate processing apparatus 1. FIG. 6 is a side view showing a state of the brush 16 during the processing of the wafer W.

  Prior to the processing of the wafer W, the recipe input key 42 is operated by the user, and the brush 16 with respect to the wafer W in the vertical direction (direction perpendicular to the surface of the wafer W) and the horizontal direction (of the wafer W). A pressing amount in a direction parallel to the surface is set (step S1). The amount of pressing in the vertical and horizontal directions refers to the amount of elastic deformation in the vertical and horizontal directions of the brush 16 when the brush 16 is pressed against the peripheral edge of the wafer W. More specifically, the amount of pressing in the vertical direction is determined by displacing the brush 16 in the vertical direction while elastically deforming the brush 16 from the state in which the first cleaning surface 29A of the brush 16 is in contact with the peripheral region 14A on the surface of the wafer W. The displacement amount until the first cleaning surface 29A is pressed against the peripheral region 14A. Further, the amount of pressing in the horizontal direction means that the second cleaning surface 29B is displaced in the horizontal direction while elastically deforming the brush 16 from the state in which the second cleaning surface 29B of the brush 16 is in contact with the peripheral end surface 15 of the wafer W. Is the amount of displacement until the state is pressed against the peripheral end face 15.

  When the wafer W is loaded into the processing chamber 2 (step S2) and the wafer W is held by the spin chuck 3, the control unit 41 controls the spin motor 9 to start the rotation of the wafer W by the spin chuck 3. (Step S3). The wafer W is rotated at a rotation speed of 100 rpm, for example. Subsequently, the processing liquid valve 12 is opened by the control unit 41, and supply of the processing liquid from the front surface nozzle 4 and the back surface nozzle 5 to the front surface and the back surface of the wafer W is started (step S4).

  Further, the brush rotation mechanism 21 is controlled by the control unit 41, and the brush 16 is rotated in the same direction as the rotation direction of the wafer W at a rotation speed of 100 to 200 rpm, for example. Thereafter, the swing drive mechanism 17 and the lift drive mechanism 18 are controlled by the control unit 41 so that the first cleaning surface 29A of the brush 16 is pressed against the peripheral region 14A of the surface of the wafer W, and the second cleaning surface 29B is rotated. It is pressed against the peripheral surface 14B on the end surface 15 and the back surface of the wafer W (step S5). Specifically, the swing drive mechanism 17 and the lift drive mechanism 18 are controlled so that the brush 16 has the first cleaning surface 29A in contact with the peripheral region 14A on the surface of the wafer W and the second cleaning surface 29B is on the wafer W. It is moved to a position where it comes into contact with the peripheral end surface 15. Thereafter, the elevation drive mechanism 18 is controlled to lower the brush 16 by the vertical pressing amount set from the recipe input key 42, and the first cleaning surface 29 A of the brush 16 is pressed against the peripheral region 14 on the surface of the wafer W. It is done. Also, before and after this, the swing drive mechanism 17 is controlled, and the brush 16 is moved toward the wafer W by the horizontal pressing amount set from the recipe input key 42, and the second cleaning surface of the brush 16. 29B is pressed against the peripheral end surface 15 of the wafer W. Since the second cleaning surface 29B is inclined downwardly away from the central axis of the brush 16, when it is pressed against the peripheral end surface 15 of the wafer W, it is elastically deformed and goes around the peripheral region 14B on the back surface of the wafer W. Contact with. Thereby, the peripheral area 14A and the peripheral end face 15 on the front surface of the wafer W can be cleaned, and the peripheral area 14B on the back surface of the wafer W can also be cleaned.

  Further, while the peripheral region 14A, the peripheral end surface 15 and the peripheral region 14B on the back surface of the wafer W are being cleaned in this way, the processing liquid supplied to the surface of the wafer W causes the processing liquid to be supplied to the surface of the wafer W more than the peripheral region 14A. Contamination adhering to the inner central region (device forming region) can be washed away. Further, the pure water as the processing liquid is a protective liquid that prevents the contaminants removed from the peripheral area 14A and the peripheral end face 15 by the brush 16 from entering the central area (device forming area) of the surface of the wafer W. It also has a role. In the case of using the treatment liquid as the protective liquid, there is no influence on the device formation region on the surface of the wafer W, such as pure water, or functional water such as carbonated water, ionic water, reduced water (hydrogen water), or magnetic water. A treatment liquid is preferably selected.

  When a predetermined time has elapsed from the start of cleaning with the brush 16, the swing drive mechanism 17 and the lift drive mechanism 18 are controlled by the control unit 41, and the brush 16 is retracted to the home position before the start of processing (step S6). Further, while the brush 16 is returned to the home position, the driving of the brush rotation mechanism 21 is stopped and the rotation of the brush 16 is stopped. Further, the processing liquid valve 12 is closed by the control unit 41, and the supply of the processing liquid from the front surface nozzle 4 and the back surface nozzle 5 is stopped (step S7).

  Thereafter, the spin motor 9 is controlled by the controller 41, and the wafer W is rotated at a high speed (eg, 3000 rpm) (step S8). Thereby, the processing liquid adhering to the wafer W can be shaken off and the wafer W can be dried.

  When the high-speed rotation of the wafer W is continued for a predetermined time, the spin motor 9 is stopped and the rotation of the wafer W by the spin chuck 3 is stopped (step S9). Then, after the wafer W is stopped, the processed wafer W is unloaded from the processing chamber 2 (step S10).

  Note that the back surface of the wafer W is cleaned by another substrate processing apparatus (processing chamber) after processing in the substrate processing apparatus 1 in order to remove contamination (suction mark) at the contact portion of the spin chuck 3 with the suction base 8. Is done.

  As described above, the first cleaning surface 29A of the brush 16 is pressed against the peripheral region 14A of the surface of the wafer W, and the second cleaning surface 29B of the brush 16 is pressed against the peripheral end surface 15 of the wafer W, thereby The peripheral region 14 and the peripheral end surface 15 can be cleaned simultaneously.

  Moreover, since the brush 16 is pressed against the peripheral area 14A on the surface of the wafer W with the pressing amount set from the recipe input key 42, the brush 16 is pressed against the peripheral area 14A on the surface of the wafer W regardless of the thickness of the wafer W. The force can be secured, and the peripheral region 14A on the surface of the wafer W can be cleaned well.

  In addition, since the first cleaning surface 29A is a flat surface, the brush 16 is pressed against the peripheral region 14A on the surface of the wafer W in the entire contact portion between the first cleaning surface 29A and the peripheral region 14A on the surface of the wafer W. The power can be the same. Therefore, the peripheral area 14A on the surface of the wafer W can be uniformly cleaned.

  In addition, since the first cleaning surface 29A does not come into contact with the inner region (center region) of the surface of the wafer W than the peripheral region 14A, the peripheral region 14A to be cleaned with the brush 16 and the center that does not need to be cleaned. Processing can be performed with a clear distinction from the area. Therefore, the accuracy of the cleaning width in the peripheral region 14A on the surface of the wafer W can be improved, and damage to the device by the brush 16 can be avoided while ensuring the maximum cleaning width.

  Further, since the second cleaning surface 29B is inclined downwardly away from the central axis of the brush 16, when pressed against the peripheral end surface 15 of the wafer W, the second cleaning surface 29B is elastically deformed and applied to the peripheral region 14B on the back surface of the wafer W. Wrap around and touch. Therefore, the peripheral area 14A and the peripheral end face 15 on the front surface of the wafer W can be cleaned, and the peripheral area 14B on the back surface of the wafer W can also be cleaned. That is, it is possible to simultaneously clean all the peripheral portions of the wafer W (the peripheral regions 14A and 14B and the peripheral end surface 15 on one surface and the other surface), and the cleaning processing of the peripheral portion of the wafer W can be performed efficiently. .

  Since a device is formed in the central area on the front surface of the wafer W and no device is formed on the back surface of the wafer W, the peripheral width 14A on the front surface of the wafer W is required to have a high precision in the cleaning width. As for the peripheral region 14B on the back surface of the wafer W, the precision of the cleaning width is not required to be as high as that on the front surface side of the wafer W. Therefore, particularly in such a case, as in the present embodiment, the peripheral region 14A on the surface of the wafer W is accurately cleaned with the first cleaning surface 29A, and the peripheral region 14B on the back surface of the wafer W is cleaned with the second cleaning surface. It is effective to perform 29B cleaning.

  Further, while the brush 16 is pressed against the wafer W, the wafer W is rotated by the spin chuck 3 and the brush 16 and the peripheral portion of the wafer W move relative to each other, so that the peripheral portion of the wafer W is efficiently moved. Can be washed.

  Further, while the brush 16 is pressed against the wafer W, the brush 16 is rotated in the same direction as the wafer W. As a result, the peripheral edge of the wafer W can be scrubbed, and the peripheral edge of the wafer W can be cleaned more satisfactorily. The rotation direction of the brush 16 may be opposite to the rotation direction of the wafer W. However, when the rotation direction of the wafer W is the same direction, the wafer W and the brush 16 can be rubbed together. Higher quality cleaning can be achieved.

  FIG. 7 is a side view showing another configuration of the brush. In FIG. 7, parts corresponding to the parts shown in FIG. 3 are denoted by the same reference numerals as those parts. Further, in the following, detailed description of the parts denoted by the same reference numerals is omitted.

  The brush 71 shown in FIG. 7 has a second peripheral end surface abutting portion 72 and a third peripheral end surface abutting on the distal end side of the substantially frustoconical first peripheral end surface abutting portion 28, respectively. The contact portion 73 is integrally provided. The second peripheral end surface abutting portion 72 has its central axis aligned with the central axis of the first peripheral end surface abutting portion 28, and the end surface on the small diameter side is the end surface (large side) of the first peripheral end surface abutting portion 28. It is connected to the central portion of the radial end face. Further, the third peripheral end surface abutting portion 3 has its central axis aligned with the central axis of the second peripheral end surface abutting portion 72, and the end surface on the small diameter side is the end surface on the distal end side of the second peripheral end surface abutting portion 72. It is connected to the central part of (the end surface on the large diameter side).

  In the brush 71, the annular band-shaped portion around the second peripheral end surface abutting portion 72 on the end surface on the distal end side of the first peripheral end surface abutting portion 28 abuts on the peripheral region 14 </ b> A on the surface of the wafer W. It is the third cleaning surface 74A. The third cleaning surface 74A has a distance from the inner diameter to the outer diameter (hereinafter simply referred to as the width of the cleaning surface) narrower than the width of the first cleaning surface 29A. In addition, the side surface of the second peripheral end surface abutting portion 72 has an upper edge that is continuous with the third cleaning surface 74A, has an inclination angle of 45 degrees with respect to the vertical direction, and inclines away from the central axis toward the lower side. Thus, the fourth cleaning surface 74B is in contact with the peripheral end surface 15 of the wafer W.

  Further, a fifth cleaning surface 75A in which an annular band-shaped portion around the third peripheral end surface contact portion 73 on the end surface on the distal end side of the second peripheral end surface contact portion 72 contacts the peripheral region 14A on the surface of the wafer W. It has become. The width of the fifth cleaning surface 75A is narrower than the width of the third cleaning surface 74A. Further, the side surface of the third peripheral end surface abutting portion 73 has an upper edge that is continuous with the fifth cleaning surface 75A, has an inclination angle of 45 degrees with respect to the vertical direction, and is inclined so as to be further away from the central axis. Thus, a sixth cleaning surface 75B is in contact with the peripheral end surface 15 of the wafer W. For example, the width of the first cleaning surface 29A is 4 mm, the width of the third cleaning surface 74A is 3 mm, and the width of the fifth cleaning surface 75A is 2 mm.

  When this brush 71 is employed, the cleaning width of the peripheral region 14A on the surface of the wafer W is set by the user from the recipe input key 42 prior to the processing of the wafer W. When the wafer W is processed, the first cleaning surface 29A, the third cleaning surface 74A, or the fifth cleaning surface 75A is set by the control unit 41 (see FIG. 4) according to the cleaning width set from the recipe input key 42. The selected first cleaning surface 29A, third cleaning surface 74A or fifth cleaning surface 75A is pressed against the peripheral region 14A on the surface of the wafer W. As described above, since the widths of the first cleaning surface 29A, the third cleaning surface 74A, and the fifth cleaning surface 75A are different from each other, the first cleaning surface 29A, the third cleaning surface 74A, and the fifth cleaning surface 75A are properly used. Thus, the cleaning width in the peripheral region 14A on the surface of the wafer W can be easily changed.

  The first cleaning surface 29A, the third cleaning surface 74A, and the fifth cleaning surface 75A may have the same width. In this case, the first cleaning surface 29A and the second cleaning surface 29B are worn by the cleaning of the wafer W. Or when contaminants are accumulated on a part of the first cleaning surface 29A and the second cleaning surface 29B so as to prevent cleaning of the wafer W, the third cleaning surface 74A and the fourth cleaning surface 74B, Alternatively, by changing the cleaning surface used for cleaning the wafer W, such as using the fifth cleaning surface 75A and the sixth cleaning surface 75B, the peripheral portion of the wafer W can be cleaned satisfactorily.

  FIG. 8 is a side view showing still another configuration of the brush. In FIG. 8, parts corresponding to the parts shown in FIG. Further, in the following, detailed description of the parts denoted by the same reference numerals is omitted.

  A plurality of grooves 82 are formed in the second cleaning surface 29B of the brush 81 shown in FIG. Each groove 82 extends linearly along the generatrix direction of the second cleaning surface 29B up to a position at least one end (upper end) of which reaches the second cleaning surface 29B.

  As described above, since the groove 82 is formed on the second cleaning surface 29B of the brush 81, the brush 81 scrapes off contaminants that adhere relatively firmly to the peripheral region 14B and the peripheral end surface 15 on the back surface of the wafer W. Can be taken. Furthermore, the contaminants scraped from the wafer W by the brush 81 can be excluded from between the second cleaning surface 29B and the wafer W through the groove. Therefore, by using the brush 81, better cleaning of the wafer W can be achieved.

The groove 82 is not limited to a linear shape along the generatrix direction of the second cleaning surface 29B, and may be formed in an annular shape along the circumferential direction of the second cleaning surface 29B, for example. Further, only one groove 82 may be formed. When only one groove 82 is formed, the groove 82 may be formed in a spiral shape.
<Cleaning effect confirmation test>
FIG. 9 is a graph showing the results of a test for confirming the cleaning effect of various shapes of brushes.

  The present inventors made four types of brushes A, B, C, and D using PVA, and used these brushes A to D as brush scrubbers manufactured by Dainippon Screen Mfg. Co., Ltd. (trade name “ SS-3000 ") was selectively mounted, and the peripheral portion of the wafer W was cleaned with each of the brushes A to D with this brush scrubber. Before and after this cleaning, the number of particles adhering to the peripheral region 14A on the front surface of the wafer W, the peripheral region 14B on the back surface, and the peripheral end surface 15 is measured by an edge inspection machine manufactured by Raytex Co., Ltd. (trade name “RXW-800”). ). The count result (Pre) before cleaning is shown by a hatched bar graph in FIG. 9, and the count result (Post) after cleaning is shown by a brick bar graph in FIG. Further, the particle removal rate (PRE) calculated from the counting results before and after the cleaning is shown by a line graph in FIG. The particle removal rate (PRE) = (Pre−Post) ÷ Pre × 100 (%) is derived.

  The brush A is a cylindrical brush that is disposed on the side of the wafer W and has a central axis parallel to an axis orthogonal to the surface of the wafer W. In cleaning using the brush A, the side surface of the brush A is disposed on the wafer W. Was pressed against the peripheral end surface 15 of the. The particle removal rate by this washing was about 20%.

  The brush B is a disc-shaped brush whose lower surface faces the peripheral region 13 on the surface of the wafer W and is arranged substantially parallel to the surface of the wafer W. In cleaning using the brush B, the lower surface of the brush B is removed. The wafer W was pressed against the peripheral area 14A on the surface from above. However, the particles were hardly removed, and the particle removal rate by this washing was almost 0%.

  The brush C is a brush having the same shape as the brush 16 according to the above-described embodiment. In the cleaning using the brush C, the peripheral region 14A on the front surface of the wafer W and the back surface are formed in the same manner as in the above-described embodiment. The peripheral area 14B and the peripheral end face 15 were cleaned. The particle removal rate by this cleaning was about 80%.

  The brush D is a cylindrical brush which is disposed on the side of the wafer W and has a groove on the peripheral surface thereof into which the wafer W can be fitted (see Patent Document 3). The peripheral edge of the wafer W was fitted into the groove. The particle removal rate by this cleaning was about 10%.

From this result, the brush 16 according to the above-described embodiment cleans the peripheral region 14A on the front surface of the wafer W, the peripheral region 14B on the back surface, and the peripheral end surface 15 as compared with the brushes A, B, and D according to the conventional proposal. It is understood that the performance is high.
FIG. 10 is a graph showing the relationship between the distance from the periphery of the surface of the wafer W and the particle removal rate.

  Further, the inventors of the present application prepare a wafer W to which Si (silicon) particles are adhered, and after cleaning the peripheral portion of the wafer W with the brush 16, the number of particles in the peripheral region 14A on the surface of the wafer W Counting was performed using a defect / foreign particle inspection apparatus (trade name “Surf Scan SP1”) manufactured by KLA-Tencor Corporation. Then, from the counting result, the particle removal rate at each position on the peripheral region 14A on the surface of the wafer W was obtained, and the relationship between the distance from the periphery of the wafer W to each position and the particle removal rate was obtained. The result is shown by a line graph in FIG. In this experiment, the cleaning width at the periphery of the surface of the wafer W was set to 2 mm.

  As shown in FIG. 10, in the cleaning using the brush 16, the particle removal rate on the surface of the wafer W changes sharply at a position 2 mm from the periphery of the wafer W.

  From this result, it is understood that the cleaning using the brush 16 can clearly distinguish the region cleaned by the brush 16 and the region not cleaned on the surface of the wafer W, thereby achieving improvement in the accuracy of the cleaning width. Is done.

  As mentioned above, although several embodiment of this invention was described, this invention can also be implemented with another form. For example, the configurations of the brushes 16, 71, 81 described above may be combined appropriately. For example, grooves similar to the grooves 82 formed in the second cleaning surface 29B of the brush 81 may be formed in the second cleaning surface 29B, the fourth cleaning surface 74B, and the sixth cleaning surface 75B of the brush 71.

  Further, a linear groove extending in the radial direction or an annular ring extending in the circumferential direction on the first cleaning surface 29A of the brushes 16, 81 and the first cleaning surface 29A, the third cleaning surface 74A and the fifth cleaning surface 75A of the brush 71. A groove or the like may be formed.

  The second cleaning surface 29B has an inclination angle of 45 degrees with respect to the vertical direction. However, the inclination angle of the second cleaning surface 29B with respect to the vertical direction is set within a range of 5 to 85 degrees. In order to prevent the deformation of the wafer W due to the pressing of the brushes 16, 71, 81 while ensuring the cleaning width in the peripheral region 14B on the back surface of the wafer W, it is set within a range of 30 to 60 degrees. It is preferred that As for the fourth cleaning surface 74B and the sixth cleaning surface 75B of the brush 71, similarly to the second cleaning surface 29B, the inclination angle with respect to the vertical direction may be set within a range of 5 to 85 degrees, and 30 to 60 It is preferably set within a range of degrees.

  The second cleaning surface 29B, the fourth cleaning surface 74B, and the sixth cleaning surface 75B have a curved shape that bulges outward in the rotational radial direction or a concave shape that indents inward in the rotational radial direction. It may be done.

  In the above-described embodiment, the brush 16 is rotated while the brushes 16, 71, 81 are in contact with the wafer W. However, the brushes 16, 71, 81 may be stationary without rotating.

  Furthermore, the configuration in which the brushes 16, 71, 81 and the peripheral portion of the wafer W are relatively moved by rotating the wafer W is taken as an example. For example, when a rectangular substrate is a processing target, the substrate It is good also as a structure which keeps stationary and moves a brush along the peripheral part of a board | substrate. Of course, the brush may be relatively moved along the peripheral edge of the substrate by moving both the substrate and the brush.

In addition, a surface cleaning brush for cleaning the central region of the surface (upper surface) of the wafer W held by the spin chuck 3, an ultrasonic cleaning nozzle for supplying a processing liquid to which ultrasonic waves have been applied to the wafer W, and gas There may be additionally provided at least one of two-fluid nozzles that supply droplets generated by mixing with liquid to the wafer W.
In addition, various design changes can be made within the scope of matters described in the claims.

DESCRIPTION OF SYMBOLS 1 Substrate processing apparatus 3 Spin chuck 4 Front surface nozzle 5 Back surface nozzle 9 Spin motor 10 Processing liquid supply pipe 11 Processing liquid supply pipe 12 Processing liquid valve 14A Wafer surface peripheral area 14B Wafer back surface peripheral area
DESCRIPTION OF SYMBOLS 15 Perimeter end face 16 Brush 17 Oscillation drive mechanism 18 Lift drive mechanism 21 Brush rotation mechanism 28 1st peripheral end surface contact part 29A 1st cleaning surface 29B 2nd cleaning surface 41 Control part 71 Brush 72 2nd peripheral end surface contact part 73 Third peripheral end surface contact portion 74A Third cleaning surface 74B Fourth cleaning surface 75A Fifth cleaning surface 75B Sixth cleaning surface 81 Brush 82 Groove W Wafer

Claims (8)

A substrate holding mechanism for holding the substrate;
A substantially frustum that is formed using an elastically deformable material and that expands toward a flat first cleaning surface and a side facing the first cleaning surface, and has an axis perpendicular to the first cleaning surface as a central axis A first peripheral end surface abutting portion formed in a shape and a central portion of the first peripheral end surface abutting portion on the large diameter side end surface and facing the large diameter side end surface of the first peripheral end surface abutting portion And a second peripheral end surface abutting portion formed in a substantially truncated cone shape extending toward the side, and the first peripheral end surface abutting portion from a peripheral end edge on the small diameter side of the first peripheral end surface abutting portion. A substantially annular belt-shaped portion extending in a direction perpendicular to the central axis of the first cleaning surface is defined as the first cleaning surface, and a side surface of the first peripheral end surface abutting portion extending toward the side facing the first cleaning surface is second cleaned. A substantially annular band-shaped portion around the central portion of the large-diameter end surface of the first peripheral end surface abutting portion is defined as a third cleaning surface, and the second peripheral surface A brush having a side surface abutting portion as a fourth cleaning surface,
A brush moving mechanism for moving the brush with respect to the substrate held by the substrate holding mechanism;
By controlling the brush moving mechanism, the first cleaning surface and the second cleaning surface are pressed against the peripheral area and the peripheral end surface of the one surface of the substrate held by the substrate holding mechanism, respectively. The cleaning surface and the fourth cleaning surface are pressed against the peripheral area and the peripheral end surface of the one surface of the substrate held by the substrate holding mechanism, respectively, of the one surface of the substrate held by the substrate holding mechanism. A control unit for selectively pressing the first cleaning surface and the second cleaning surface and the third cleaning surface and the fourth cleaning surface against a peripheral region and the peripheral end surface; A substrate processing apparatus.   The substrate processing apparatus according to claim 1, wherein a width of the first cleaning surface is different from a width of the third cleaning surface.   The substrate processing apparatus according to claim 1, wherein a groove is formed in the fourth cleaning surface.   The substrate processing apparatus according to claim 1, wherein a groove is formed in the second cleaning surface.   5. The substrate processing apparatus according to claim 1, further comprising a brush rotation mechanism configured to rotate the brush about an axis extending in a perpendicular direction perpendicular to the first cleaning surface. 6.   6. The brush relative movement mechanism for moving the substrate held by the substrate holding mechanism and the brush relative to each other so that the brush moves in a circumferential direction of the substrate. The substrate processing apparatus according to any one of the above.   7. The method according to claim 1, further comprising a processing liquid supply mechanism that supplies a processing liquid to an area inside the peripheral area of at least the one surface of the substrate held by the substrate holding mechanism. 2. The substrate processing apparatus according to 1. A substantially frustum that is formed using an elastically deformable material and that expands toward a flat first cleaning surface and a side facing the first cleaning surface, and has an axis perpendicular to the first cleaning surface as a central axis A first peripheral end surface abutting portion formed in a shape and a central portion of the first peripheral end surface abutting portion on the large diameter side end surface and facing the large diameter side end surface of the first peripheral end surface abutting portion And a second peripheral end surface abutting portion formed in a substantially truncated cone shape extending toward the side, and the first peripheral end surface abutting portion from a peripheral end edge on the small diameter side of the first peripheral end surface abutting portion. A substantially annular belt-shaped portion extending in a direction perpendicular to the central axis of the first cleaning surface is defined as the first cleaning surface, and a side surface of the first peripheral end surface abutting portion extending toward the side facing the first cleaning surface is second cleaned. A substantially annular band-shaped portion around the central portion of the large-diameter end surface of the first peripheral end surface abutting portion is defined as a third cleaning surface, and the second peripheral surface The substrate processing method of processing a substrate by brush with a side surface abutting portion as a fourth cleaning surface,
A substrate holding step of holding the substrate by the substrate holding mechanism;
By moving the brush, the first cleaning surface and the second cleaning surface are pressed against the peripheral region and the peripheral end surface of one surface of the substrate held by the substrate holding mechanism, respectively, and the third cleaning surface And the peripheral area of the one surface of the substrate held by the substrate holding mechanism so that the fourth cleaning surface is pressed against the peripheral area and the peripheral surface of the one surface of the substrate held by the substrate holding mechanism, respectively. And a brush pressing step of selectively pressing the first cleaning surface and the second cleaning surface, and the third cleaning surface and the fourth cleaning surface against the peripheral end surface, Substrate processing method.

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