JP5138195B2 - Heat transfer gas supply mechanism, heat transfer gas supply method, substrate processing apparatus, and substrate processing method - Google Patents

Description

  The present invention relates to a mounting table and a substrate so that the temperature of a substrate to be processed such as a glass substrate for a flat panel display (FPD) that is subjected to a predetermined process in a state of being mounted on a mounting table in a processing container can be adjusted. Heat transfer gas supply mechanism and heat transfer gas supply method for supplying heat transfer gas to a space between process substrates, and substrate processing apparatus and substrate processing method including such a heat transfer gas supply mechanism and heat transfer gas supply method About.

  In an FPD manufacturing process, a plasma processing apparatus such as a plasma etching apparatus or a plasma CVD film forming apparatus is used to perform a predetermined process such as an etching process or a film forming process on an FPD glass substrate that is a substrate to be processed. Is used. Generally in a plasma processing apparatus, a glass substrate is placed on a mounting table in a processing container, and a processing gas generated by generating a high-frequency electric field while supplying the processing gas into the processing container. Processed by plasma.

  In such a process, in order to avoid a temperature change of the glass substrate due to the generated plasma or the like, for example, a temperature rise, the glass substrate may be temperature-controlled, for example, cooled by a temperature control mechanism provided on the mounting table. He gas or the like is placed in the space between the mounting table and the glass substrate so that heat transfer between the temperature control mechanism and the glass substrate is reliably performed and the in-plane temperature of the glass substrate is kept uniform. The heat transfer gas is supplied. In general, the heat transfer gas is detected by a pressure control valve (PCV) or the like through a flow path such as a pipe having one end connected to the heat transfer gas supply source and the other end connected to the space between the mounting table and the glass substrate. And a flow rate adjusting valve so as to be maintained at a predetermined pressure, for example, 200 to 1330 Pa (1.5 to 10 Torr).

  By the way, recently, the enlargement of FPD has been aimed at, and a huge glass substrate with one side exceeding 2 m has also appeared. Along with this, the space between the mounting table and the glass substrate, the flow path, etc. The space capacity filled with heat transfer gas (hereinafter referred to as heat transfer gas full space) is increasing. Moreover, in order to further improve the uniformity of the in-plane temperature of the glass substrate due to the heat transfer gas, a mounting table whose upper surface is embossed is also used, and the space between the mounting table and the glass substrate is further increased. There is a tendency. For this reason, it takes a long time from the start of the supply of the heat transfer gas until the set pressure is reached, resulting in a problem that the throughput of the apparatus is lowered.

  Therefore, in order to quickly reach the set pressure from the start of supply of heat transfer gas, a tank that can be temporarily filled with heat transfer gas is provided in the middle of the flow path, and heat transfer gas from the supply source is set in this tank A technology has been proposed in which the heat transfer gas filling space is filled with a heat transfer gas at a set pressure or a pressure close to the set pressure instantly by filling with a pressure corresponding to the pressure and opening the tank. (For example, refer to Patent Document 1).

In such a technique, a heat loss is usually caused by leakage of heat transfer gas from the gap between the mounting table and the glass substrate. Therefore, it is only necessary to release the filled heat transfer gas by opening the tank. It is difficult to adjust the filling space to the set pressure, and it is necessary to supplement the heat transfer gas for the insufficient pressure from the supply source. Therefore, in many cases, the PCV is provided between the supply source of the flow path and the tank so that the supply of the heat transfer gas from the supply source can be adjusted while measuring the pressure of the flow path. However, in this case, since there is a tank that becomes a large space on the downstream side of the PCV, when the heat transfer gas is filled in the heat transfer gas filled space, the PCV has an abnormality in the mounting state of the glass substrate. It is impossible to detect a subtle pressure change that occurs, and the pressure responsiveness of the PCV may be impaired, resulting in variations in actual pressure. If the pressure in the heat transfer gas filled space including the space between the mounting table and the glass substrate varies, the processing quality of the glass substrate will deteriorate.
Japanese Patent Laid-Open No. 7-32184

  The present invention has been made in view of such circumstances, and can supply a heat transfer gas in such an amount that the space between the mounting table and the substrate to be processed becomes a set pressure in a short time. In addition, a heat transfer gas supply mechanism and a heat transfer gas supply method capable of accurately maintaining this space at a set pressure, a substrate processing apparatus equipped with such a heat transfer gas supply mechanism, and such a heat transfer gas supply An object of the present invention is to provide a substrate processing method including the method, and a computer-readable storage medium storing a control program for executing the substrate processing method.

In order to solve the above-described problem, in the first aspect of the present invention, the above description is made so that the temperature of a substrate to be processed on which a predetermined process is performed in a state of being mounted on a mounting table in a processing container is possible. A heat transfer gas supply mechanism for supplying a heat transfer gas to a space between a table and a substrate to be processed, the heat transfer gas supply source for supplying the heat transfer gas to the space, and the heat transfer gas supply source A heat transfer gas tank for temporarily storing the heat transfer gas from, and one end connected to the heat transfer gas supply source, the other end connected to the space, and the heat transfer gas from the heat transfer gas supply source A first heat transfer gas flow path that leads to the space, and is branched from the first heat transfer gas flow path and connected to the heat transfer gas tank, and the heat transfer gas in the first heat transfer gas flow path is transferred to the heat transfer gas tank. A second gas which is led to the hot gas tank and guides the heat transfer gas stored in the heat transfer gas tank to the first heat transfer gas flow path; A heat transfer gas flow path, provided in the first thermal transfer gas flow path, said comprising a pressure detector for detecting a pressure in the space and the heat transfer gas flow path, the heat transfer is the heat transfer gas After all the heat transfer gas that has been temporarily stored in the heat transfer gas tank from the hot gas supply source and supplied from the heat transfer gas tank stored in the heat transfer gas tank is supplied to the space, the heat transfer gas supply When the heat transfer gas is supplied from the source to the space, the heat transfer gas tank is supplied without going through the heat transfer gas tank, and the two heat transfer gas tanks are provided. When the heat transfer gas stored in the gas tank is supplied, it is determined whether or not the mounting state of the substrate on the mounting table is normal from the detection value by the pressure detection unit, and the mounting state is normal. When it is determined, the detection value by the pressure detection unit is a predetermined value. Composed manner, the to the other supply heat transfer gas tank to the reservoir by heat transfer gas, a heat transfer gas supply mechanism, characterized in that to supply the heat transfer gas from the heat transfer gas supply source optionally provide.

In a first aspect of the present invention, before Symbol pressure detection unit that is provided on the upstream side of the branch portion between the second heat transfer gas flow path of the first heat transfer gas passages Further preferred.

Moreover, in the 2nd viewpoint of this invention, it mounted in the processing table which accommodates the to-be-processed substrate, the mounting base in which the to-be-processed substrate was provided provided in the said processing container, and the said mounting base. a processing mechanism for performing predetermined processing for a substrate to be processed, during the processing by at least the processing mechanism, between air formed between the mounting table and the substrate to be processed before such that the temperature of the substrate is adjusted A heat transfer gas supply mechanism for supplying heat transfer gas to the heat transfer gas supply mechanism, the heat transfer gas supply mechanism for supplying heat transfer gas to the space, and A heat transfer gas tank for temporarily storing the heat transfer gas from the heat transfer gas supply source, one end connected to the heat transfer gas supply source, and the other end connected to the space, from the heat transfer gas supply source A first heat transfer gas channel for guiding the heat transfer gas to the space; and the first heat transfer gas. Branched from the flow path and connected to the heat transfer gas tank, the heat transfer gas in the first heat transfer gas flow path is led to the heat transfer gas tank, and the heat transfer gas stored in the heat transfer gas tank is transferred to the first heat transfer gas tank. A second heat transfer gas flow path that leads to the heat transfer gas flow path, and a pressure detection unit that is provided in the first heat transfer gas flow path and detects the pressure in the space and the heat transfer gas flow path And a control unit that controls the processing mechanism and the heat transfer gas supply mechanism based on a detection value by the pressure detection unit, and the heat transfer gas is temporarily transferred from the heat transfer gas supply source to the heat transfer gas tank. After all the heat transfer gas that has been stored and can be supplied from the heat transfer gas tank stored in the heat transfer gas tank is supplied to the space, the heat transfer gas is supplied from the heat transfer gas supply source to the space. when supplied without passing through the heat transfer gas tank Two heat transfer gas tanks are provided, and the control unit supplies the heat transfer gas stored in the one heat transfer gas tank before the processing by the processing mechanism, and the detected value by the pressure detection unit. Determining whether or not the mounting state of the substrate on the mounting table is normal, and determining that the mounting state is normal, so that the detection value by the pressure detection unit becomes a predetermined value, The heat transfer gas stored in the other heat transfer gas tank is supplied, the heat transfer gas from the heat transfer gas supply source is supplied as necessary, and the substrate to be processed is processed by the processing mechanism. A substrate processing apparatus is provided.
Moreover, in the 3rd viewpoint of this invention, the processing container which accommodates a to-be-processed substrate, the mounting base in which the to-be-processed substrate was mounted provided in the said processing container, and it mounted on the mounting table mentioned above. A processing mechanism for performing predetermined processing on the substrate to be processed, and at least a space formed between the mounting table and the substrate to be processed so that the temperature of the substrate to be processed is adjusted at least during processing by the processing mechanism; A substrate processing apparatus comprising a heat transfer gas supply mechanism for supplying a heat transfer gas, wherein the heat transfer gas supply mechanism includes a heat transfer gas supply source for supplying the heat transfer gas to the space, and the heat transfer gas supply mechanism. A heat transfer gas tank for temporarily storing heat transfer gas from the hot gas supply source, one end connected to the heat transfer gas supply source, and the other end connected to the space, and the heat transfer gas supply from the heat transfer gas supply source. A first heat transfer gas flow path for guiding the hot gas to the space; and the first heat transfer gas. Branched from the flow path and connected to the heat transfer gas tank, the heat transfer gas in the first heat transfer gas flow path is led to the heat transfer gas tank, and the heat transfer gas stored in the heat transfer gas tank is transferred to the first heat transfer gas tank. A second heat transfer gas flow path that leads to the heat transfer gas flow path, and a pressure detection unit that is provided in the first heat transfer gas flow path and detects the pressure in the space and the heat transfer gas flow path And a control unit that controls the processing mechanism and the heat transfer gas supply mechanism based on a detection value by the pressure detection unit, and the heat transfer gas is temporarily transferred from the heat transfer gas supply source to the heat transfer gas tank. After all the heat transfer gas that has been stored and can be supplied from the heat transfer gas tank stored in the heat transfer gas tank is supplied to the space, the heat transfer gas is supplied from the heat transfer gas supply source to the space. Is supplied without going through the heat transfer gas tank. The second thermal transfer gas flow path, wherein a first flow channel for guiding the heat transfer gas in the heat transfer gas flow path to said heat transfer gas tank, a heat transfer gas stored in the heat transfer gas tank the A flow path for guiding to the first heat transfer gas flow path, and the control unit supplies the heat transfer gas stored in the heat transfer gas tank before the processing by the processing mechanism. And determining whether or not the mounting state of the substrate on the mounting table is normal from the detection value by the pressure detection unit, and again transferring the heat transfer gas from the heat transfer gas supply source to the heat transfer gas tank. When it is determined that the mounted state is normal, the heat transfer gas stored again in the heat transfer gas tank is supplied, and the heat transfer gas from the heat transfer gas supply source is supplied as necessary. And processing the substrate to be processed by the processing mechanism. Providing board processor shall be the.

In the second aspect or the third aspect of the present invention, the pre-Symbol pressure detecting unit is provided on the upstream side of the branch portion between the second heat transfer gas flow path of the first heat transfer gas passages It is still preferred that

Further, in this case, before Symbol controller, to pretreatment with the processing mechanism, wherein the heat transfer gas quantity value detected by the pressure detecting portion is set to a value lower than the predetermined value Den by supplying the hot gas supply mechanism, placement state to the mounting table of the substrate from the value detected by the pressure detecting unit it can be judged whether it is normal.

In the second or third aspect of the present invention described above, the processing mechanism includes a processing gas supply mechanism for supplying a processing gas into the processing container, an exhaust mechanism for exhausting the processing container, It is preferable to have a plasma generation mechanism for generating plasma of the processing gas in the processing container, and to perform plasma processing on the substrate to be processed.

According to a fourth aspect of the present invention, the mounting table and the substrate to be processed are provided so that the temperature of the substrate to be processed on which the predetermined processing is performed while being mounted on the mounting table in the processing container is possible. A heat transfer gas supply method for supplying a heat transfer gas to a space between the heat transfer gas supply source for supplying the heat transfer gas to the space, and the heat transfer gas from the heat transfer gas supply source. A heat transfer gas tank for temporarily storing, and a first end connected to the heat transfer gas supply source, the other end connected to the space, and a first heat transfer gas from the heat transfer gas supply source to the space A heat transfer gas flow path, and branched from the first heat transfer gas flow path and connected to the heat transfer gas tank, the heat transfer gas in the first heat transfer gas flow path is led to the heat transfer gas tank, and a second heat transfer gas flow path for guiding the to heat transfer gas accumulated in the heat transfer gas tank to the first heat transfer gas flow path, before Provided in the first heat transfer gas flow path, wherein preparing a pressure detection unit for detecting a pressure in the space and the heat transfer gas flow path, the heat transfer to the heat transfer gas from the heat transfer gas supply source After all the heat transfer gas that has been temporarily stored in the gas tank and can be supplied from the heat transfer gas tank stored in the heat transfer gas tank is supplied to the space, the heat transfer gas is supplied from the heat transfer gas supply source to the space. When supplying, supply without passing through the heat transfer gas tank, two heat transfer gas tanks are provided, and the heat transfer gas stored in the one heat transfer gas tank is supplied before the predetermined processing. , It is determined whether or not the mounting state of the substrate on the mounting table is normal from the detection value by the pressure detection unit, and when the mounting state is determined to be normal, the detection value by the pressure detection unit The other heat transfer gas tank so that To supply the pooled heat transfer gas, providing a heat transfer gas supply method characterized in that to supply the heat transfer gas from the heat transfer gas supply as needed.

Moreover, in the 5th viewpoint of this invention, the process substrate accommodated in a processing container, and it mounts on the mounting base provided in this processing container, The to-be-processed substrate mounted on the mounting base mentioned above And a step of supplying a heat transfer gas to a space between the mounting table and the substrate to be processed so that the temperature of the substrate to be processed can be adjusted at least in the predetermined processing step. In the heat transfer gas supply step, the heat transfer gas supply source for supplying the heat transfer gas to the space and the heat transfer gas from the heat transfer gas supply source are temporarily provided. A heat transfer gas tank for storing in the first heat transfer gas tank; one end connected to the heat transfer gas supply source; the other end connected to the space; and a first heat transfer for guiding the heat transfer gas from the heat transfer gas supply source to the space A gas flow path and a branch from the first heat transfer gas flow path are connected to the heat transfer gas tank. The second heat transfer gas that guides the heat transfer gas in the first heat transfer gas channel to the heat transfer gas tank and guides the heat transfer gas stored in the heat transfer gas tank to the first heat transfer gas channel. A gas flow path and a pressure detector for detecting the pressure in the space and the heat transfer gas flow path are prepared in the first heat transfer gas flow path, and the heat transfer gas is supplied from the heat transfer gas supply source. After temporarily storing in the heat transfer gas tank and supplying the heat transfer gas stored in the heat transfer gas tank to all the spaces that can be supplied from the heat transfer gas tank, the heat transfer gas is transferred from the heat transfer gas supply source to the space. When supplying the hot gas, it is supplied without going through the heat transfer gas tank, two heat transfer gas tanks are provided, and the heat transfer gas stored in the one heat transfer gas tank is provided before the predetermined processing step. Supply hot gas, from the detection value by the pressure detection unit, the substrate of the Heat transfer gas stored in the other heat transfer gas tank at the time of the predetermined processing step when it is determined whether or not the mounting state on the mounting table is normal and the mounting state is determined to be normal Is provided, and a heat transfer gas from the heat transfer gas supply source is supplied as necessary .
Moreover, in the 6th viewpoint of this invention, the process substrate is accommodated in the processing container, and it mounts on the mounting base provided in this processing container, The to-be-processed substrate mounted on the mounting base mentioned above And a step of supplying a heat transfer gas to a space between the mounting table and the substrate to be processed so that the temperature of the substrate to be processed can be adjusted at least in the predetermined processing step. In the heat transfer gas supply step, the heat transfer gas supply source for supplying the heat transfer gas to the space and the heat transfer gas from the heat transfer gas supply source are temporarily provided. A heat transfer gas tank for storing in the first heat transfer gas tank; one end connected to the heat transfer gas supply source; the other end connected to the space; and a first heat transfer for guiding the heat transfer gas from the heat transfer gas supply source to the space A gas flow path and a branch from the first heat transfer gas flow path are connected to the heat transfer gas tank. The second heat transfer gas that guides the heat transfer gas in the first heat transfer gas channel to the heat transfer gas tank and guides the heat transfer gas stored in the heat transfer gas tank to the first heat transfer gas channel. A gas flow path and a pressure detection unit for detecting a pressure in the space and the heat transfer gas flow path are prepared in the first heat transfer gas flow path, and the second heat transfer gas flow path is A flow path for guiding the heat transfer gas in the first heat transfer gas flow path to the heat transfer gas tank, and a flow of heat transfer gas stored in the heat transfer gas tank to the first heat transfer gas flow path. The flow path is separately provided, and the heat transfer gas stored in the heat transfer gas tank is supplied before the predetermined processing step, and the detection value of the pressure detection unit is used to describe the substrate. It is determined whether the mounting state on the mounting table is normal, and the heat transfer gas of the heat transfer gas supply source is changed to the heat transfer gas tank. When it is determined that the mounting state is normal, the heat transfer gas stored again in the heat transfer gas tank is supplied during the predetermined processing step, and the heat transfer gas is supplied as necessary. Provided is a substrate processing method characterized by supplying a heat transfer gas from a supply source.

Further, according to a seventh aspect of the present invention, there is provided a computer-readable storage medium storing a control program that operates on a computer, and the control program performs the substrate processing method at the time of execution. A computer-readable storage medium characterized by causing a computer to control a processing device is provided.

According to the present invention, the first end is connected to the heat transfer gas supply source, the other end is connected to the space between the mounting table and the substrate to be processed, and the heat transfer gas from the heat transfer gas supply source is guided to the space. a heat transfer gas flow path branches from the first heat transfer gas flow path is connected to a heat transfer gas tank, the heat transfer gas in the first heat transfer gas passages leading to the heat transfer gas tank, the heat transfer gas tank A second heat transfer gas flow path is provided for guiding the stored heat transfer gas to the first heat transfer gas flow path, and the heat transfer gas is temporarily stored in the heat transfer gas tank from the heat transfer gas supply source. In order to supply the heat transfer gas stored in the hot gas tank to the space between the mounting table and the substrate to be processed, an amount of heat transfer gas such that the space between the mounting table and the substrate to be processed becomes a set pressure. can be supplied in a short time, moreover, after all the heat transfer gas supply capable of supplying from the heat transfer gas tank is a large space Since the hot gas tank can be separated from the first heat transfer gas flow path, a space between the mounting table and the substrate to be processed is provided by providing a pressure detection unit such as PCV in the first heat transfer gas flow path. The set pressure can be quickly and accurately held.
Further, two heat transfer gas tanks are provided, and the heat transfer gas stored in the one heat transfer gas tank is supplied before the predetermined processing, and the detected value by the pressure detection unit is transferred to the mounting table on the substrate. Is determined to be normal, and when it is determined that the mounting state is normal, the other heat transfer gas tank is set so that the detection value by the pressure detection unit becomes a predetermined value. The stored heat transfer gas is supplied, and the heat transfer gas from the heat transfer gas supply source is supplied as necessary.
Alternatively, the second heat transfer gas flow path, the flow path for guiding the heat transfer gas of the first heat transfer gas flow path to the heat transfer gas tank, and the heat transfer gas stored in the heat transfer gas tank Is provided separately from the flow path for guiding the first heat transfer gas flow path, and before the predetermined processing step, the heat transfer gas stored in the heat transfer gas tank is supplied. Determining whether or not the mounting state of the substrate on the mounting table is normal from the detection value of the pressure detection unit, and storing the heat transfer gas of the heat transfer gas supply source in the heat transfer gas tank again. When it is determined that the mounting state is normal, the heat transfer gas stored again in the heat transfer gas tank is supplied during the predetermined processing step, and the heat transfer gas supply source transfers the heat transfer gas as necessary. Supply hot gas.
Accordingly, it is possible to shorten the processing time of the substrate to be processed and improve the processing quality.

Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings.
FIG. 1 is a schematic sectional view of a plasma etching apparatus as an embodiment of a substrate processing apparatus according to the present invention, and FIG. 2 is a schematic view of a heat transfer gas supply mechanism constituting the plasma etching apparatus.

  The plasma etching apparatus 1 is configured as a capacitively coupled parallel plate plasma etching apparatus that performs etching on an FPD glass substrate (hereinafter simply referred to as “substrate”) G. Examples of the FPD include a liquid crystal display (LCD), an electroluminescence (EL) display, a plasma display panel (PDP), and the like. The plasma etching apparatus 1 includes a chamber 2 as a processing container that accommodates the substrate G. The chamber 2 is made of, for example, aluminum whose surface is anodized (anodized), and is formed in a square tube shape corresponding to the shape of the substrate G.

  A susceptor 4 as a mounting table on which the substrate G is mounted is provided on the bottom wall in the chamber 2. The susceptor 4 is formed in a square plate shape or a column shape corresponding to the shape of the substrate G, and a base material 4a made of a conductive material such as metal and an insulating member 4b made of an insulating material covering the periphery of the base material 4a. And an insulating member 4c made of an insulating material provided so as to cover the bottoms of the base member 4a and the insulating member 4b and supporting them. A power supply line 23 for supplying high-frequency power is connected to the base material 4a, and a matching unit 24 and a high-frequency power source 25 are connected to the power supply line 23. For example, high frequency power of 13.56 MHz is supplied from the high frequency power supply 25 to the susceptor 4, whereby the susceptor 4 functions as a lower electrode. In addition, the base material 4a has a temperature adjustment composed of an electrostatic adsorption mechanism for adsorbing the mounted substrate G, and a cooling means such as a refrigerant channel for adjusting the temperature of the mounted substrate G. Mechanism (both not shown).

  A plurality of convex portions 4d made of a dielectric material are formed in a protruding shape on the surface of the base material 4a, and the convex portions 4d are surrounded by an insulating member 4b. The upper surface of the insulating member 4b and the upper end portion of the convex portion 4d have the same height, and the glass substrate G is placed on the upper surface of the insulating member 4b and the upper end portion of the convex portion 4d when placed on the susceptor 4. It comes into contact. Thereby, when the substrate G is placed on the susceptor 4, a space D is formed between the substrate G and the susceptor 4.

  A shower head 11 that supplies a processing gas into the chamber 2 and functions as an upper electrode is provided on the upper or upper wall of the chamber 2 so as to face the susceptor 4. In the shower head 11, a gas diffusion space 12 for diffusing the processing gas is formed therein, and a plurality of discharge holes 13 for discharging the processing gas are formed on the lower surface or the surface facing the susceptor 4. The shower head 11 is grounded and forms a pair of parallel plate electrodes together with the susceptor 4.

A gas inlet 14 is provided on the upper surface of the shower head 11, and a processing gas supply pipe 15 is connected to the gas inlet 14. A valve 16 and a mass flow controller 17 are connected to the processing gas supply pipe 15. A processing gas supply source 18 is connected to the via. A processing gas for etching is supplied from the processing gas supply source 18. As the processing gas, a gas usually used in this field, such as a halogen-based gas, an O ₂ gas, or an Ar gas, can be used.

  An exhaust pipe 19 is connected to the bottom wall of the chamber 2, an exhaust device 20 is connected to the exhaust pipe 19, and a pressure adjusting valve (not shown) is provided. The exhaust device 20 includes a vacuum pump such as a turbo molecular pump, and is configured to be able to evacuate the chamber 2 to a predetermined reduced pressure atmosphere. A loading / unloading port 21 for loading / unloading the substrate G is formed on the side wall of the chamber 2, and a gate valve 22 for opening / closing the loading / unloading port 21 is provided. The substrate G is carried in and out of the chamber 2 by the transfer means.

  In the bottom wall of the chamber 2 and the susceptor 4, a plurality of insertion holes 7 penetrating them are formed, for example, at a peripheral edge position of the susceptor 4 with a gap. In each insertion hole 7, a lifter pin 8 that supports and lifts the substrate G from below is inserted so as to protrude and retract with respect to the substrate placement surface of the susceptor 4. A flange 26 is formed at the lower portion of each lifter pin 8, and one end (lower end) of an extendable bellows 27 provided so as to surround the lifter pin 8 is connected to each flange 26. The other end (upper end) of the bellows 27 is connected to the bottom wall of the chamber 2. Accordingly, the bellows 27 expands and contracts following the lifting and lowering of the lifter pin 8 and seals the gap between the insertion hole 7 and the lifter pin 8.

  The susceptor 4 has a space D between the substrate G and the susceptor 4 so that heat transfer is reliably performed between the mounted substrate G and the temperature control mechanism so that the substrate G is adjusted to a desired temperature. A heat transfer gas supply mechanism 3 for supplying the heat transfer gas is connected. The heat transfer gas supply mechanism 3 includes two heat transfer gas supply sources 30 for supplying the heat transfer gas to the space D, and two for temporarily storing or filling the heat transfer gas from the heat transfer gas supply source 30. The heat transfer gas tanks 31 and 32 and the heat transfer gas of the heat transfer gas supply source 30 are led to the heat transfer gas tanks 31 and 32, and the heat transfer gas of the heat transfer gas supply source 30 and the heat transfer gas of the heat transfer gas tanks 31 and 32 are also shown. Is provided with a heat transfer gas line 33 (heat transfer gas flow path). The heat transfer gas supply source 30 and the heat transfer gas tanks 31 and 32 are disposed outside the chamber 2, and the heat transfer gas line 33 passes through the bottom wall of the chamber 2 and the susceptor 4 so as to communicate with the space D. It is connected.

  The heat transfer gas line 33 has one end connected to the heat transfer gas supply source 30 and the other end connected to the space D, the first heat transfer gas line 34 (first heat transfer gas flow path), Second heat transfer gas lines 35 and 36 (second heat transfer gas flow paths) branched from one heat transfer gas line 34 and connected to the heat transfer gas tanks 31 and 32, respectively, and the first heat transfer gas A heat transfer gas discharge line 37 for discharging the heat transfer gas in the first heat transfer gas line 34 branched from the line 34 is provided. The heat transfer gas discharge line 37 is connected to, for example, the exhaust pipe 19 and is configured to send the heat transfer gas in the first heat transfer gas line 34 into the exhaust pipe 19.

  The first heat transfer gas line 34 is provided with a pressure control valve (PCV) 38 on the upstream side of the connection portion (branch portion) with the second heat transfer gas lines 35, 36, and the second heat transfer gas line 34. A valve 34 a is provided on the downstream side of the connection with the gas lines 35 and 36. The second heat transfer gas lines 35 and 36 and the heat transfer gas discharge line 37 are also provided with valves 35a, 36a and 37a, respectively. The pressure control valve 38 has a pressure detection unit that detects the pressure in the space D and the heat transfer gas line 33, and is configured to adjust the flow rate of the heat transfer gas based on the detection value by the pressure detection unit. Yes.

  Each component of the plasma etching apparatus 1 is controlled by a process controller 50 having a microprocessor (computer). The process controller 50 includes a user interface 51 including a keyboard that allows a process manager to input commands to manage the plasma etching apparatus 1, a display that visualizes and displays the operating status of the plasma etching apparatus 1, and the like. A storage unit 52 storing a recipe in which a control program for realizing the processing executed by the plasma etching apparatus 1 under the control of the process controller 50 and processing condition data is stored is connected. Then, if necessary, an arbitrary recipe is called from the storage unit 52 by an instruction from the user interface 51 and is executed by the process controller 50, so that the process in the plasma etching apparatus 1 can be performed under the control of the process controller 50. Done. The recipe may be stored in a computer-readable storage medium such as a CD-ROM, a hard disk, or a flash memory, or may be received from another device, for example, via a dedicated line as needed. It is also possible to transmit and use.

  More specifically, the pressure control valve 38 and the valves 34a, 35a, 36a, 37a of the heat transfer gas supply mechanism 3 are controlled by a unit controller 53 connected to the process controller 50 as shown in FIG. It is the composition which becomes. If necessary, the process controller 50 calls an arbitrary recipe from the storage unit 52 and controls the unit controller 53 according to an instruction from the user interface 51 or the like.

  In the plasma etching apparatus 1 configured in this way, first, when the substrate G is carried in by the carrying means (not shown) from the carrying-in / out opening 21 opened in the state where the inside of the chamber 2 is evacuated and decompressed by the evacuating apparatus 20, Each lifter pin 8 is raised, and the substrate G is received from the transfer means and supported by each lifter pin 8. When the transfer means exits from the loading / unloading port 21 to the outside of the chamber 2, the loading / unloading port 21 is closed by the gate valve 22 and the lifter pins 8 are lowered to be immersed in the substrate mounting surface of the susceptor 4. To be placed.

  When the loading / unloading port 21 is closed and the substrate G is placed on the susceptor 4, the processing gas from the processing gas supply source 18 is adjusted by the mass flow controller 17 while the processing gas supply pipe 15, the gas inlet 14 and the shower head are adjusted. 11 is supplied into the chamber 2 via the pressure adjusting valve 11 and adjusted to a predetermined pressure in the chamber 2 by a pressure adjusting valve provided in the exhaust pipe 19. In this state, a DC voltage is applied to the electrostatic adsorption mechanism to apply the substrate. G is adsorbed on the susceptor 4.

At this time, the space between the substrate G and the susceptor 4 is moved by the heat transfer gas supply mechanism 3 so that the temperature adjustment by the temperature adjustment mechanism built in the susceptor 4 operating in advance is efficiently performed on the substrate G. Heat transfer gas is supplied to D. The heat transfer gas is supplied by opening the valve 34a and the valve 35a and releasing the heat transfer gas previously filled in the heat transfer gas tank 31 from the heat transfer gas supply source 30 when the substrate G is loaded / unloaded. Do. The pressure P ₁ of the heat transfer gas previously charged in the heat transfer gas tank 31 is a portion where the capacity of the heat transfer gas tank 31 is a, the space D and the same pressure as the space D in the heat transfer gas line 33 when the heat transfer gas is supplied ( P ₁ × a = P ₀ × (x + a) where x is the capacity of the heat transfer gas filling space mainly composed of the first heat transfer gas supply line 34) and P ₀ is the set pressure of the supplied heat transfer gas. A value satisfying the relational expression is preferable. As a result, when the valve 34a and the valve 35a are opened, the pressure of the heat transfer gas in the heat transfer gas filled space including the space D can be instantaneously reached the set pressure P ₀ or the vicinity of the set pressure P _0. . Here, the set pressure P ₀ of the heat transfer gas is set to a pressure lower than 400 Pa (3 Torr), for example, 200 Pa (1.5 Torr), which is lower than the set pressure P _{3 of} the heat transfer gas supplied during the plasma etching process described later. can do. As a specific example in this case, assuming that the capacity x of the heat transfer gas filling space is less than 0.9 l and the capacity a of the heat transfer gas tank 31 is 0.1 l, the heat transfer gas filled in the heat transfer gas tank 31. The pressure P ₁ can be set to about 1870 Pa (14 Torr). If the set pressure P ₀ cannot be reached only with the heat transfer gas filled in the heat transfer gas tank 31, the heat transfer gas may be supplied from the heat transfer gas supply source 30 to make up for it. The pressure of the heat transfer gas in the heat transfer gas filled space including the space D and the pressure of the heat transfer gas filled in the heat transfer gas tank 31 can be detected by the pressure control valve 38. After releasing the heat transfer gas filled in the heat transfer gas tank 31, the valve 35a is closed, so that the heat transfer gas tanks 31, 32 are placed on the first heat transfer gas line 34 provided with the pressure control valve 38. Since such a large space does not exist, the pressure control valve 38 can accurately detect a subtle change in the pressure of the heat transfer gas, and based on this detection value, the pressure transfer from the heat transfer gas supply source 30 can be detected. The supply amount of hot gas can be adjusted immediately.

  After supplying the heat transfer gas from the heat transfer gas tank 31 to the space D, if the substrate G is missing or misaligned and is not normally placed on the susceptor 4, the substrate G and the susceptor 4 Since the heat transfer gas leaks from the gap, the detected value of the pressure detection unit is lower than the set pressure, for example, 200 Pa (1.5 Torr), or the heat transfer gas supply from the heat transfer gas supply source 30 is supplemented. The amount is higher than normal. Therefore, after the heat transfer gas is supplied from the heat transfer gas tank 31, it can be determined whether or not the mounting state of the substrate G on the susceptor 4 is normal based on the detection value of the pressure detection unit of the pressure control valve 38. .

For example, when it is determined that the detected value of the pressure detection unit is stable at or near the set pressure and the mounting state of the substrate G on the susceptor 4 is normal, the high-frequency power supply 25 passes through the matching unit 24. Then, high frequency power is applied to the susceptor 4 to generate a high frequency electric field between the susceptor 4 serving as the lower electrode and the shower head 11 serving as the upper electrode, so that the processing gas in the chamber 2 is turned into plasma. At this time, the valve 36a is opened, and the heat transfer gas previously filled in the heat transfer gas tank 32 from the heat transfer gas supply source 30 is further discharged. The pressure P ₂ of the heat transfer gas previously charged in the heat transfer gas tank 32 is P ₂ × b = (P ₃ −P ₀ ), where b is the capacity of the heat transfer gas tank 32 and P ₃ is the set pressure of the heat transfer gas. ) × (x + b) is preferable to satisfy the relational expression. Thereby, when the valve 36a is opened, the pressure of the heat transfer gas in the heat transfer gas filled space including the space D is instantaneously made to reach the set pressure P ₃ , for example, 400 Pa (3 Torr), or near the set pressure P _3. Is possible. As a specific example, assuming that the capacity x of the heat transfer gas-filled space including the space D is less than 0.9 l and the capacity b of the heat transfer gas tank 32 is 0.1 l, the heat transfer filled in the heat transfer gas tank 32. the pressure _{P 2} of the gas can be set to about 1870Pa (14Torr). Incidentally, the heat transfer gas tank 32 heat transfer gas which had been filled in the release, after closing the valves 36a, if the pressure of the heat transfer gas in the heat transfer gas plenum containing space D does not reach the set pressure P ₃ to supply the heat transfer gas from the heat transfer gas supply source 30 so as to set the pressure P _3. In this state, the substrate G is etched by the processing gas plasma.

  On the other hand, for example, the detection value of the pressure detector gradually decreases and becomes lower than the set pressure, or the supplementary supply amount of the heat transfer gas from the heat transfer gas supply source 30 becomes larger than normal, and the substrate G When it is determined that the mounting state of the substrate G on the susceptor 4 is abnormal, a warning message or the like is issued via the user interface 51, and the mounting state of the substrate G on the susceptor 4 is corrected normally. After that, application of high frequency power to the susceptor 4 and supply of heat transfer gas from the heat transfer gas tank 32 are performed.

  When the substrate G is etched, the application of the high frequency power from the high frequency power supply 25 is stopped, the supply of the processing gas and the heat transfer gas is stopped, the valve 37a is opened, and the heat transfer gas is transferred to the heat transfer gas discharge line 37. To discharge through. Furthermore, the adsorption | suction of the board | substrate G by an electrostatic attraction mechanism is cancelled | released, and the static elimination process is performed to the board | substrate G. FIG. Next, the loading / unloading port 21 is opened by the gate valve 22 and the lifter pin 8 is raised to separate the substrate G from the susceptor 4 upward. Thereafter, when a transport mechanism (not shown) enters the chamber 2 from the loading / unloading port 21, the lifter pin 8 is lowered to transfer the substrate G to the transport mechanism. Thereafter, the substrate G is carried out of the chamber 2 from the carry-in / out port 21 by the carrying mechanism. When the substrate G is loaded and unloaded, the heat transfer gas from the heat transfer gas supply source 30 is filled in the heat transfer gas tanks 31 and 32 at a predetermined pressure.

  In the present embodiment, the heat transfer gas tank used for supplying the heat transfer gas having a pressure lower than the desired set pressure to the space D before the plasma etching process is denoted by reference numeral 31, and then the space D during the plasma etching process. Although the heat transfer gas tank used to supply the heat transfer gas having a desired set pressure is designated by reference numeral 32, these may be used interchangeably.

  In the present embodiment, the heat transfer gas from the heat transfer gas supply source 30 is guided to the heat transfer gas tanks 31 and 32 for storing in advance, and the heat transfer gas and the heat transfer gas tank 31 from the heat transfer gas supply source 30 are stored. The heat transfer gas line 33 that guides the heat transfer gas stored in 32 to the space D between the susceptor 4 and the substrate G is connected to the heat transfer gas supply source 30 and the other end is connected to the space D. The first heat transfer gas line 34 and the second heat transfer gas lines 35 and 36 branched from the first heat transfer gas line 34 and connected to the heat transfer gas tanks 31 and 32, respectively, The heat transfer gas filled in the heat transfer gas tanks 31 and 32 is supplied to the space D from the heat transfer gas supply source 30 via the heat transfer gas line 34 and the second heat transfer gas lines 35 and 36, and if necessary, The heat transfer through the first heat transfer gas line 34 In order to supply the heat transfer gas from the gas supply source 30 to the space D, a large space D is formed between the susceptor 4 and the substrate G by the convex portion 4d provided on the upper surface of the susceptor 4. However, it is possible to supply the heat transfer gas in such a short amount that the space D becomes the set pressure. In addition, since the valves 35 a and 36 a provided in the second heat transfer gas lines 35 and 36 are closed, the heat transfer gas tanks 31 and 32, which are large spaces, can be isolated from the first heat transfer gas line 34. The pressure of the heat transfer gas can be accurately maintained by the pressure control valve 38 provided in the first heat transfer gas line. Therefore, the processing time of the substrate G can be shortened and the processing quality of the substrate G can be improved.

  Further, in the present embodiment, the pressure control valve 38 is provided on the upstream side of the connection portion of the first heat transfer gas line 34 with the second heat transfer gas lines 35, 36. In addition to the pressure in the heat transfer gas filling space including the space D and the first heat transfer gas line 34, the pressure of the heat transfer gas preliminarily filled in the heat transfer gas tanks 31 and 32 can also be detected.

  Further, in the present embodiment, before the plasma etching process, the value detected by the pressure detection unit of the pressure control valve 38 is lower than a set pressure value during the plasma etching process, for example, 400 Pa (3 Torr), for example, 200 Pa (1. 5 Torr) is supplied, and it is determined whether or not the mounting state of the substrate G on the susceptor 4 is normal based on the value detected by the pressure detector, and the mounting state is normal. When it is determined that there is a heat transfer gas in such an amount that the detected value by the pressure detector becomes a set pressure value, for example, 400 Pa (3 Torr), and plasma etching is performed, the susceptor 4 of the substrate G is supplied. It is possible to prevent a situation in which the substrate G is subjected to plasma etching processing while the mounting state of the substrate is abnormal, thereby preventing damage to internal components such as the susceptor 4 While, it is possible to enhance the processing efficiency of the substrate G. Furthermore, in this embodiment, two heat transfer gas tanks 31 and 32 are provided, and the heat transfer gas is supplied using the heat transfer gas tank 31 to determine the mounting state of the substrate G before the plasma etching process, and the plasma Since the heat transfer gas is supplied using the heat transfer gas tank 32 during the etching process, both the heat transfer gas supply before the plasma etching process and the heat transfer gas supply during the plasma etching process can be performed quickly. .

Next, using the plasma etching apparatus 1 of the present embodiment, the substrate G and the substrate G from the time when a DC voltage is applied to the electrostatic adsorption mechanism built in the susceptor 4 while the substrate G is placed on the susceptor 4. Time until the heat transfer gas filled in the heat transfer gas tank 31 of the heat transfer gas supply mechanism 3 is supplied to the space D between the susceptor 4 and the pressure of the supplied heat transfer gas is stabilized to a set pressure ( Hereinafter, the stability time) was measured. The total capacity x in the space D filled with the heat transfer gas and the heat transfer gas line 33 when supplying the heat transfer gas was set to a little less than 0.9 l, and the set pressure P ₁ of the heat transfer gas was set to 200 Pa (1.5 Torr). And based on the relational expression of P ₁ × a = P ₀ × (x + a), the capacity a of the heat transfer gas tank 31 is set to 0.25 l, and the heat transfer gas filling pressure P ₁ of the heat transfer gas tank 31 is set to 930 Pa ( a case of a 7 Torr), the capacity a of the heat transfer gas tank 31 and 0.1 l, and were measured respectively for the case where the filling pressure _{P 1} of the heat transfer gas in the heat transfer gas tank 31 was set to 1870Pa (14Torr). As a comparative example, as shown in FIG. 3, measurement was performed using a heat transfer gas supply mechanism B that supplies the heat transfer gas from the heat transfer gas supply source 30 to the space D via the supply line A. . The supply line A has a capacity substantially equal to that of the first supply line 34. The measurement results are shown in FIGS.

In the heat transfer gas supply mechanism 3 provided in the plasma etching apparatus 1 of the present embodiment, the capacity a of the heat transfer gas tank 31 is set to 0.25 l, and the heat transfer gas filling pressure P ₁ of the heat transfer gas tank 31 is set to 930 Pa ( 7 Torr), the stabilization time is about 10.5 seconds as shown in FIG. 4A, the capacity a of the heat transfer gas tank 31 is 0.1 l, and the heat transfer gas of the heat transfer gas tank 31 is when the filling pressure _{P 1} was 1870Pa (14Torr), the stabilization time as shown in FIG. 4 (b) was about 8.5 seconds. On the other hand, in the heat transfer gas supply mechanism B of the comparative example, the stabilization time was 16 seconds as shown in FIG. That is, by using the heat transfer gas supply mechanism 3, as compared with the case of using the conventional heat transfer gas supply mechanism B, the time until the supply pressure of the heat transfer gas is maintained at the set pressure, that is, the substrate. It was confirmed that the processing time of G can be greatly shortened. Moreover, it was confirmed that the time until the supply pressure of the heat transfer gas is maintained at the set pressure can be further shortened by reducing the capacity of the heat transfer gas tank 31 and increasing the filling pressure of the heat transfer gas.

  Next, a modified example of the heat transfer gas supply mechanism 3 will be described.

FIG. 5 is a view showing a first modification of the heat transfer gas supply mechanism 3.
In the heat transfer gas supply mechanism 3, as described above, one end of the second heat transfer gas lines 35 and 36 branched from the first heat transfer gas line 34 is connected to the heat transfer gas tanks 31 and 32. However, the present invention is not limited to this, and as shown in FIG. 5, the second heat transfer gas lines 35 and 36 are branched at both ends from the first heat transfer gas line 34 and transferred to the intermediate portion. You may provide so that the hot gas tanks 31 and 32 may be connected. In this case, valves 35d (36d) and 35e (36e) are provided upstream and downstream of the heat transfer gas tank 31 of the second heat transfer gas line 35 (36), respectively. 32 are provided with pressure detection means 31a, 32a such as a pressure gauge for measuring the pressure of the heat transfer gas filled in the heat transfer gas tanks 31, 32, respectively. Further, the pressure control valve 38 can be provided in the first heat transfer gas line 34 so as to be positioned between the upstream end and the downstream end of the second heat transfer gas lines 35, 36. . In this case, the second heat transfer gas lines 35 and 36 respectively have upstream lines 35b and 36b (upstream flow paths) for guiding the heat transfer gas of the first heat transfer gas line 34 to the heat transfer gas tanks 31 and 32, respectively. ) And downstream lines 35c and 36c (downstream flow paths) for guiding the heat transfer gas filled in the heat transfer gas tanks 31 and 32 to the first heat transfer gas line 34, respectively. , 32 is supplied to the space D via the downstream lines 35c, 36c, and then the valves 35e, 36e are closed, and the pressure in the space D is maintained by the pressure control valve 38. The heat transfer gas from the heat transfer gas supply source 30 can be filled into the heat transfer gas tanks 31 and 32 via the upstream lines 35b and 36b. That is, even when the substrate G is processed, the heat transfer gas tanks 31 and 32 can be refilled with the heat transfer gas. Therefore, it is not necessary to fill the heat transfer gas tanks 31 and 32 with the heat transfer gas when the substrate G is carried in and out, and the interval between the processing of the substrates can be shortened to further increase the throughput. Here, the upstream lines 35b and 36b are joined and connected to the first heat transfer gas line 34, but may be connected to the first heat transfer gas line 34 separately. Further, the downstream lines 35 c and 36 c may be joined and connected to the first heat transfer gas line 34.

FIG. 6 is a view showing a second modification of the heat transfer gas supply mechanism 3.
Further, in the heat transfer gas supply mechanism 3, as shown in FIG. 6, only one heat transfer gas tank 31 and one second heat transfer gas line 35 are provided, and the second heat transfer gas line 35 is connected to both ends. A part may branch from the 1st heat-transfer gas line 34, and you may provide so that the heat-transfer gas tank 31 may be connected to an intermediate part. Also in this case, the upstream line 35 b that guides the heat transfer gas from the first heat transfer gas line 34 to the heat transfer gas tank 31, and the heat transfer gas filled in the heat transfer gas tank 31 to the first heat transfer gas line 34. And a downstream line 35c leading to Therefore, the heat transfer gas before the plasma etching process and the heat transfer gas at the time of the plasma etching process can be supplied by one heat transfer gas tank 31, thereby further improving the throughput while simplifying the apparatus. It becomes possible to raise.

  The preferred embodiment of the present invention has been described above, but the present invention is not limited to the above embodiment, and various modifications can be made. In the above embodiment, the pressure detection unit that detects the pressure between the space between the substrate and the susceptor and the heat transfer gas line is branched from the second heat transfer gas line or the downstream line of the first heat transfer gas line. However, the present invention is not limited to this, and the pressure detection unit may be provided downstream of the second heat transfer gas line of the first heat transfer gas line or the branching part with the downstream line. Good. In the above-described embodiment, an example in which the present invention is applied to an RIE type capacitively coupled parallel plate plasma etching apparatus that applies high-frequency power to the lower electrode has been described. However, the present invention is not limited thereto, and other plasmas such as ashing and CVD film formation are used. The present invention can be applied to a processing apparatus, and can also be applied to any substrate processing apparatus other than a plasma processing apparatus that processes a substrate placed on a mounting table. Moreover, although the said embodiment demonstrated the example applied to the glass substrate for FPD, it is applicable not only to this but general substrates, such as a semiconductor substrate.

It is a schematic sectional drawing of the plasma etching apparatus which is one Embodiment of the substrate processing apparatus which concerns on this invention. It is the schematic of the heat transfer gas supply mechanism which comprises a plasma etching apparatus. It is the schematic of a conventional heat transfer gas supply mechanism. It is a figure which shows the measurement result of time until it hold | maintains to a predetermined pressure when heat transfer gas is supplied by the heat transfer gas supply mechanism of this embodiment, and the conventional heat transfer gas supply mechanism. It is a figure which shows the 1st modification of a heat transfer gas supply mechanism. It is a figure which shows the 2nd modification of a heat transfer gas supply mechanism.

Explanation of symbols

1: Plasma etching equipment (substrate processing equipment: plasma processing equipment)
2: Chamber (processing container)
3: Heat transfer gas supply mechanism 4: Susceptor (mounting table)
15: Process gas supply pipe 18: Process gas supply source 19: Exhaust pipe 20: Exhaust device 25: High frequency power supply 30: Heat transfer gas supply source 31, 32: Heat transfer gas tank 33: Heat transfer gas line (heat transfer gas flow path )
34: 1st heat transfer gas line (1st heat transfer gas flow path)
35, 36: second heat transfer gas line (second heat transfer gas flow path)
35b, 36b: upstream line (upstream flow path)
35c, 36c: Downstream line (downstream channel)
38: Pressure control valve 50: Process controller 51: User interface 52: Storage unit 53: Unit controller G: Glass substrate (substrate to be processed)

Claims (12)

Heat transfer gas is supplied to the space between the mounting table and the substrate to be processed so that the temperature of the substrate to be processed on which the predetermined processing is performed while being mounted on the mounting table in the processing container is possible. A heat transfer gas supply mechanism,
A heat transfer gas supply source for supplying heat transfer gas to the space;
A heat transfer gas tank for temporarily storing the heat transfer gas from the heat transfer gas supply source;
A first heat transfer gas flow path having one end connected to the heat transfer gas supply source and the other end connected to the space, and guiding the heat transfer gas from the heat transfer gas supply source to the space;
Branched from the first heat transfer gas flow path and connected to the heat transfer gas tank, the heat transfer gas in the first heat transfer gas flow path was led to the heat transfer gas tank, and stored in the heat transfer gas tank A second heat transfer gas channel that guides the heat transfer gas to the first heat transfer gas channel ;
A pressure detector provided in the first heat transfer gas flow path for detecting pressure in the space and the heat transfer gas flow path ;
After the heat transfer gas is temporarily stored in the heat transfer gas tank from the heat transfer gas supply source, and all the heat transfer gases that can be supplied from the heat transfer gas tank stored in the heat transfer gas tank are supplied to the space When supplying the heat transfer gas from the heat transfer gas supply source to the space, it is supplied without going through the heat transfer gas tank ,
Two heat transfer gas tanks are provided,
Before the predetermined treatment, whether the heat transfer gas stored in the one heat transfer gas tank is supplied, and whether or not the mounting state of the substrate on the mounting table from the detection value by the pressure detection unit is normal Judging
When it is determined that the mounting state is normal, the heat transfer gas stored in the other heat transfer gas tank is supplied so that the detection value by the pressure detection unit becomes a predetermined value, and if necessary, the A heat transfer gas supply mechanism that supplies heat transfer gas from a heat transfer gas supply source . The said pressure detection part is provided in the upstream from the branch part with the said 2nd heat transfer gas flow path of the said 1st heat transfer gas flow path, The heat transfer of Claim 1 characterized by the above-mentioned. Hot gas supply mechanism. A processing container for storing a substrate to be processed;
A mounting table provided in the processing container on which a substrate to be processed is mounted;
A processing mechanism for performing a predetermined process on the target substrate placed on the mounting table;
During treatment with at least said processing mechanism, and a heat transfer gas supply mechanism for supplying a heat transfer gas between air formed between the mounting table and the substrate to be processed before such that the temperature of the substrate is adjusted A substrate processing apparatus,
The heat transfer gas supply mechanism includes:
A heat transfer gas supply source for supplying heat transfer gas to the space;
A heat transfer gas tank for temporarily storing the heat transfer gas from the heat transfer gas supply source;
A first heat transfer gas flow path having one end connected to the heat transfer gas supply source and the other end connected to the space, and guiding the heat transfer gas from the heat transfer gas supply source to the space;
Branched from the first heat transfer gas flow path and connected to the heat transfer gas tank, the heat transfer gas in the first heat transfer gas flow path was led to the heat transfer gas tank, and stored in the heat transfer gas tank A second heat transfer gas channel that guides the heat transfer gas to the first heat transfer gas channel ;
A pressure detector provided in the first heat transfer gas flow path for detecting pressure in the space and the heat transfer gas flow path ;
A control unit for controlling the processing mechanism and the heat transfer gas supply mechanism based on a detection value by the pressure detection unit;
After the heat transfer gas is temporarily stored in the heat transfer gas tank from the heat transfer gas supply source, and all the heat transfer gases that can be supplied from the heat transfer gas tank stored in the heat transfer gas tank are supplied to the space When supplying the heat transfer gas from the heat transfer gas supply source to the space, it is supplied without going through the heat transfer gas tank ,
Two heat transfer gas tanks are provided,
The controller is
Before the processing by the processing mechanism, the heat transfer gas stored in the one heat transfer gas tank is supplied, and whether or not the mounting state of the substrate on the mounting table from the detection value by the pressure detection unit is normal Determine whether
When it is determined that the mounting state is normal, the heat transfer gas stored in the other heat transfer gas tank is supplied so that the detection value by the pressure detection unit becomes a predetermined value, and if necessary, the A substrate processing apparatus characterized in that a heat transfer gas is supplied from a heat transfer gas supply source and a substrate to be processed is processed by the processing mechanism. A processing container for storing a substrate to be processed;
A mounting table provided in the processing container on which a substrate to be processed is mounted;
A processing mechanism for performing a predetermined process on the target substrate placed on the mounting table;
A heat transfer gas supply mechanism for supplying a heat transfer gas to a space formed between the mounting table and the substrate to be processed so that the temperature of the substrate to be processed is adjusted at least during processing by the processing mechanism;
A substrate processing apparatus comprising:
The heat transfer gas supply mechanism includes:
A heat transfer gas supply source for supplying heat transfer gas to the space;
A heat transfer gas tank for temporarily storing the heat transfer gas from the heat transfer gas supply source;
A first heat transfer gas flow path having one end connected to the heat transfer gas supply source and the other end connected to the space, and guiding the heat transfer gas from the heat transfer gas supply source to the space;
Branched from the first heat transfer gas flow path and connected to the heat transfer gas tank, the heat transfer gas in the first heat transfer gas flow path was led to the heat transfer gas tank, and stored in the heat transfer gas tank A second heat transfer gas channel that guides the heat transfer gas to the first heat transfer gas channel;
A pressure detector provided in the first heat transfer gas flow path for detecting pressure in the space and the heat transfer gas flow path;
Comprising
A control unit for controlling the processing mechanism and the heat transfer gas supply mechanism based on a detection value by the pressure detection unit;
After the heat transfer gas is temporarily stored in the heat transfer gas tank from the heat transfer gas supply source, and all the heat transfer gases that can be supplied from the heat transfer gas tank stored in the heat transfer gas tank are supplied to the space When supplying the heat transfer gas from the heat transfer gas supply source to the space, it is supplied without going through the heat transfer gas tank,
The second heat transfer gas channel includes a channel for guiding the heat transfer gas in the first heat transfer gas channel to the heat transfer gas tank, and the heat transfer gas stored in the heat transfer gas tank. Separately having a flow path for guiding to the first heat transfer gas flow path,
The controller is
Before processing by the processing mechanism, the heat transfer gas stored in the heat transfer gas tank is supplied, and whether or not the mounting state of the substrate on the mounting table is normal from the detection value by the pressure detection unit. Judgment and re-storing the heat transfer gas from the heat transfer gas supply source in the heat transfer gas tank,
When it is determined that the mounting state is normal, the heat transfer gas stored again in the heat transfer gas tank is supplied, and the heat transfer gas from the heat transfer gas supply source is supplied as necessary. board processor it characterized thereby treating the target substrate by the processing mechanism. The said pressure detection part is provided in the upstream of the branch part with the said 2nd heat transfer gas flow path of the said 1st heat transfer gas flow path, The Claim 3 or Claim 4 characterized by the above-mentioned. 2. The substrate processing apparatus according to 1. Before Symbol control unit,
Before the processing by the processing mechanism, the amount of heat transfer gas set so that the value detected by the pressure detection unit is lower than the predetermined value is supplied by the heat transfer gas supply mechanism, and the pressure detection the substrate processing apparatus according to any one of the preceding claims 3 to placement state is characterized by determining whether a normal from the detection value by the part to the mounting table of the substrate. The processing mechanism includes a processing gas supply mechanism for supplying a processing gas into the processing container, an exhaust mechanism for exhausting the processing container, and a plasma generation mechanism for generating plasma of the processing gas in the processing container. The substrate processing apparatus according to claim 3 , wherein the substrate processing apparatus performs plasma processing on the substrate to be processed. Heat transfer gas is supplied to the space between the mounting table and the substrate to be processed so that the temperature of the substrate to be processed on which the predetermined processing is performed while being mounted on the mounting table in the processing container is possible. A heat transfer gas supply method,
A heat transfer gas supply source for supplying heat transfer gas to the space;
A heat transfer gas tank for temporarily storing the heat transfer gas from the heat transfer gas supply source;
A first heat transfer gas flow path having one end connected to the heat transfer gas supply source and the other end connected to the space, and guiding the heat transfer gas from the heat transfer gas supply source to the space;
Branched from the first heat transfer gas flow path and connected to the heat transfer gas tank, the heat transfer gas in the first heat transfer gas flow path was led to the heat transfer gas tank, and stored in the heat transfer gas tank A second heat transfer gas channel that guides the heat transfer gas to the first heat transfer gas channel ;
A pressure detector provided in the first heat transfer gas flow path for detecting pressure in the space and the heat transfer gas flow path ;
After temporarily storing the heat transfer gas in the heat transfer gas tank from the heat transfer gas supply source and supplying all the heat transfer gas that can be supplied from the heat transfer gas tank stored in the heat transfer gas tank to the space, When supplying heat transfer gas from the heat transfer gas supply source to the space, supply without passing through the heat transfer gas tank ,
Two heat transfer gas tanks are provided,
Before the predetermined treatment, whether the heat transfer gas stored in the one heat transfer gas tank is supplied, and whether or not the mounting state of the substrate on the mounting table from the detection value by the pressure detection unit is normal Judging
When it is determined that the mounting state is normal, the heat transfer gas stored in the other heat transfer gas tank is supplied so that the detection value by the pressure detection unit becomes a predetermined value, and if necessary, the A heat transfer gas supply method comprising supplying a heat transfer gas from a heat transfer gas supply source . Storing a substrate to be processed in a processing container and placing the substrate on a mounting table provided in the processing container;
Performing a predetermined process on the substrate to be processed placed on the mounting table;
Supplying the heat transfer gas to the space between the mounting table and the substrate to be processed so that the temperature of the substrate to be processed can be adjusted at least in the predetermined processing step,
In the heat transfer gas supply step,
A heat transfer gas supply source for supplying heat transfer gas to the space, a heat transfer gas tank for temporarily storing the heat transfer gas from the heat transfer gas supply source, and one end of the heat transfer gas supply source The other end is connected to the space, and branches from the first heat transfer gas flow path for guiding the heat transfer gas from the heat transfer gas supply source to the space, and the first heat transfer gas flow path. The heat transfer gas tank is connected to the heat transfer gas tank, guides the heat transfer gas in the first heat transfer gas channel to the heat transfer gas tank, and transfers the heat transfer gas stored in the heat transfer gas tank to the first heat transfer gas channel. Preparing a second heat transfer gas flow path leading to the first heat transfer gas flow path and a pressure detection unit for detecting the pressure in the space and the heat transfer gas flow path ,
After temporarily storing the heat transfer gas from the heat transfer gas supply source in the heat transfer gas tank and supplying the heat transfer gas stored in the heat transfer gas tank to all the spaces that can be supplied from the heat transfer gas tank , When supplying heat transfer gas from the heat transfer gas supply source to the space, supply without passing through the heat transfer gas tank ,
Two heat transfer gas tanks are provided,
Before the predetermined processing step, the heat transfer gas stored in the one heat transfer gas tank is supplied, and whether or not the mounting state of the substrate on the mounting table from the detection value by the pressure detection unit is normal Determine whether
When it is determined that the mounting state is normal, the heat transfer gas stored in the other heat transfer gas tank is supplied during the predetermined processing step, and the heat transfer gas supply source transfers the heat transfer gas as necessary. A substrate processing method comprising supplying a hot gas . Storing a substrate to be processed in a processing container and placing the substrate on a mounting table provided in the processing container;
Performing a predetermined process on the substrate to be processed placed on the mounting table;
Supplying heat transfer gas to a space between the mounting table and the substrate to be processed so that the temperature of the substrate to be processed can be adjusted at least in the predetermined processing step;
A substrate processing method comprising:
In the heat transfer gas supply step,
A heat transfer gas supply source for supplying heat transfer gas to the space, a heat transfer gas tank for temporarily storing the heat transfer gas from the heat transfer gas supply source, and one end of the heat transfer gas supply source The other end is connected to the space, and branches from the first heat transfer gas flow path for guiding the heat transfer gas from the heat transfer gas supply source to the space, and the first heat transfer gas flow path. The heat transfer gas tank is connected to the heat transfer gas tank, guides the heat transfer gas in the first heat transfer gas channel to the heat transfer gas tank, and transfers the heat transfer gas stored in the heat transfer gas tank to the first heat transfer gas channel. Preparing a second heat transfer gas flow path leading to the first heat transfer gas flow path and a pressure detection unit for detecting the pressure in the space and the heat transfer gas flow path,
The second heat transfer gas flow path, the flow path for guiding the heat transfer gas of the first heat transfer gas flow path to the heat transfer gas tank, and the heat transfer gas stored in the heat transfer gas tank are A flow path for guiding to the first heat transfer gas flow path is separately provided and configured.
Before the predetermined processing step, the heat transfer gas stored in the heat transfer gas tank is supplied, and whether or not the mounting state of the substrate on the mounting table is normal from the detection value of the pressure detection unit. And determining the heat transfer gas from the heat transfer gas supply source in the heat transfer gas tank again,
When it is determined that the mounting state is normal, the heat transfer gas stored again in the heat transfer gas tank is supplied during the predetermined processing step, and heat transfer from the heat transfer gas supply source is performed as necessary. board processing how to and supplying the gas. Before the predetermined processing step, an amount of heat transfer gas set so that the detection value by the pressure detection unit is lower than the predetermined value is supplied, and the detection value of the substrate is determined from the detection value by the pressure detection unit. the substrate processing method according to claim 9 or claim 10 placement state to the mounting table is characterized judgment to Rukoto whether it is normal. A computer-readable storage medium storing a control program that runs on a computer,
A computer-readable storage medium characterized in that the control program causes a computer to control a processing apparatus so that the substrate processing method according to any one of claims 9 to 11 is performed at the time of execution.

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