JP5137563B2 - 横型構成電気光学デバイス - Google Patents
横型構成電気光学デバイス Download PDFInfo
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- JP5137563B2 JP5137563B2 JP2007335641A JP2007335641A JP5137563B2 JP 5137563 B2 JP5137563 B2 JP 5137563B2 JP 2007335641 A JP2007335641 A JP 2007335641A JP 2007335641 A JP2007335641 A JP 2007335641A JP 5137563 B2 JP5137563 B2 JP 5137563B2
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- 239000004065 semiconductor Substances 0.000 claims description 294
- 239000000463 material Substances 0.000 claims description 91
- 239000000758 substrate Substances 0.000 claims description 31
- 230000005855 radiation Effects 0.000 claims description 16
- 239000000969 carrier Substances 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims description 5
- 230000006798 recombination Effects 0.000 claims description 5
- 238000005215 recombination Methods 0.000 claims description 5
- 239000004020 conductor Substances 0.000 claims description 3
- 238000005401 electroluminescence Methods 0.000 claims 7
- 230000005540 biological transmission Effects 0.000 claims 2
- 238000000926 separation method Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 128
- 238000004519 manufacturing process Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
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Description
Claims (23)
- 表面を有する基板と、
第1のタイプの半導体材料の第1の半導体層であって、前記第1の半導体層は第1の側面、第2の側面、上面、および下面を有しており、前記第1の半導体層の前記下面は前記基板の前記表面の一部分に結合されている、第1の半導体層と、
前記第1のタイプの半導体材料と異なる第2のタイプの半導体材料から形成された第2の半導体層であって、前記第2の半導体層は、第1の側面、第2の側面、上面、および下面を有しており、これらは、
前記第2の半導体層の前記下面が前記第1の半導体層の前記上面に結合されて接合を形成し、
前記第2の半導体層の前記第1の側面が前記第1の半導体層の前記第1の側面に隣接し、
前記第2の半導体層の前記第2の側面が前記第1の半導体層の前記第2の側面に隣接するように構成されている、第2の半導体層と、
前記第1の半導体層の前記第1の側面に直接電気的に結合された、第1の電極と、
前記第2の半導体層の前記第2の側面に直接電気的に結合された、第2の電極と、を備え、
前記第1の電極および前記第2の電極は、前記第1の半導体層の前記下面または前記第2の半導体層の前記上面の少なくとも一方が、前記第1の電極および前記第2の電極によって塞がれていないように構成され、
前記基板はゲート電極およびゲート絶縁体を有しており、前記ゲート絶縁体は、前記第1の半導体層が結合される前記基板の表面の前記部分を形成している、横型構成電気光学デバイス。 - 前記第1の半導体層が結合される前記基板の表面の前記部分は反射性である、請求項1に記載の横型構成電気光学デバイス。
- 前記第1のタイプの半導体材料は、
n型有機半導体材料、
p型有機半導体材料、
バイポーラ有機半導体材料、
n型無機半導体材料、
p型無機半導体材料、または
真性無機半導体材料のいずれか1つであり、
前記第2のタイプの半導体材料は、
n型有機半導体材料、
p型有機半導体材料、
バイポーラ有機半導体材料、
n型無機半導体材料、
p型無機半導体材料、または
真性無機半導体材料のいずれか1つである、
請求項1に記載の横型構成電気光学デバイス。 - 前記横型構成電気光学デバイスはエレクトロルミネセンス(EL)デバイスであり、
前記第1のタイプの半導体材料または前記第2のタイプの半導体材料の少なくとも一方はEL材料である、
請求項1に記載の横型構成電気光学デバイス。 - 前記放射は、前記第1の半導体層と前記第2の半導体層との間の前記接合の近傍のキャリア再結合によって生成され、
前記生成された放射の前記第1の半導体層の前記下面および前記基板を通しての効率的な透過のために、前記第1の半導体層の厚さが選択されるか、
前記生成された放射の前記第2の半導体層の前記上面を通しての効率的な透過のために、前記第2の半導体層の厚さが選択されるか、
の少なくとも一方である、請求項4に記載の横型構成電気光学デバイス。 - 前記第1の半導体層または前記第2の半導体層の少なくとも一方の厚さは100nm未満である、請求項5に記載の横型構成電気光学デバイス。
- 前記横型構成電気光学デバイスは光起電力(PV)デバイスであり、
前記第1のタイプの半導体材料または前記第2のタイプの半導体材料の少なくとも一方はPV材料である、
請求項1に記載の横型構成電気光学デバイス。 - 前記放射は、PV材料から形成されている前記前記第1の半導体層または前記第2の半導体層の少なくとも一方において電子−正孔対を生成し、
前記PV材料から形成されている前記第1の半導体層または前記第2の半導体層のそれぞれの厚さは、前記生成された電子−正孔対の、第1の半導体層と前記第2の半導体層との間の前記接合による効率的な分離のために選択されている、
請求項7に記載の横型構成電気光学デバイス。 - 前記PV材料から形成されている前記第1の半導体層または前記第2の半導体層のそれぞれの厚さは100nm未満である、請求項8に記載の横型構成電気光学デバイス。
- 第1の半導体層と前記第2の半導体層との間の前記接合は、前記基板の表面に対して所定の角度で形成されている、請求項1に記載の横型構成電気光学デバイス。
- 前記接合と前記基板の表面との間の前記所定の角度は、前記第1の半導体層の最大厚さを前記第1の半導体層の幅で割った大きさのアークタンジェントにおよそ等しい、請求項10に記載の横型構成電気光学デバイス。
- 前記第1の半導体層の前記第1の側面は前記第1の電極とオーミックコンタクトを形成するドープ部を有するか、
前記第2の半導体層の前記第2の側面は前記第2の電極とオーミックコンタクトを形成するドープ部を有するか、
の少なくとも一方である、請求項1に記載の横型構成電気光学デバイス。 - 前記第1の電極と前記第2の半導体層の前記第1の側面との間に設けられた絶縁層、または、
前記第2の電極と前記第1の半導体層の前記第2の側面との間に設けられた絶縁層、
の少なくとも一方をさらに備える、請求項1に記載の横型構成電気光学デバイス。 - 前記第1の電極は、第1の仕事関数を有する第1の導電性材料から形成され、
前記第2の電極は、第2の仕事関数を有する第2の導電性材料から形成され、
前記第1の仕事関数および前記第2の仕事関数は、
前記第1のタイプのキャリアが前記第1の半導体層と前記第1の電極との間を流れるのが、前記第1のタイプのキャリアが前記第1の半導体層と前記第2の電極との間を流れるよりも容易であり、
前記第2のタイプのキャリアが前記第2の半導体層と前記第2の電極との間を流れるのが、前記第2のタイプのキャリアが前記第2の半導体層と前記第1の電極との間を流れるよりも容易である、
ように選択されている、請求項1に記載の横型構成電気光学デバイス。 - 前記第1のタイプの半導体材料から形成された第3の半導体層であって、前記第3の半導体層は、第1の側面、第2の側面、上面、および下面を有しており、これらは、
前記第3の半導体層の前記下面が前記第2の半導体層の前記上面に結合されて別の接合を形成し、
前記第3の半導体層の前記第1の側面が前記第2の半導体層の前記第1の側面に隣接し、前記第1の電極に直接電気的に結合されており、
前記第3の半導体層の前記第2の側面が前記第2の半導体層の前記第2の側面に隣接するように構成されている、第3の半導体層、
をさらに備える請求項1に記載の横型構成電気光学デバイス。 - 前記第2のタイプの半導体材料から形成される第4の半導体層であって、前記第4の半導体層は、第1の側面、第2の側面、上面、および下面を有しており、これらは、
前記第4の半導体層の前記下面が前記第3の半導体層の前記上面に結合されてさらなる接合を形成し、
前記第4の半導体層の前記第1の側面が前記第3の半導体層の前記第1の側面に隣接し、
前記第4の半導体層の前記第2の側面が前記第3の半導体層の前記第2の側面に隣接し、前記第2の電極に直接電気的に結合されるように構成されている、第4の半導体層、
をさらに備える請求項15に記載の横型構成電気光学デバイス。 - 第1の側面、第2の側面、上面、および下面を有する透光性絶縁層であって、これらは、前記透光性絶縁層の前記下面が前記第3の半導体層の前記上面に結合されるように構成されている、透光性絶縁層と、
前記第1のタイプの半導体材料から形成された第4の半導体層であって、前記第4の半導体層は、第1の側面、第2の側面、上面、および下面を有しており、これらは、
前記第4の半導体層の前記下面は前記透光性絶縁層の前記上面に結合され、
前記第4の半導体層の前記第1の側面は前記透光性絶縁層の前記第1の側面に隣接し、前記第1の電極に直接電気的に結合されており、
前記第4の半導体層の前記第2の側面は前記透光性絶縁層の前記第2の側面に隣接するように構成されている、第4の半導体層と、
前記第2のタイプの半導体材料から形成された第5の半導体層であって、前記第5の半導体層は、第1の側面、第2の側面、上面、および下面を有しており、これらは、
前記第5の半導体層の前記下面が前記第4の半導体層の前記上面と結合されてさらなる接合を形成し、
前記第5の半導体層の前記第1の側面は前記第4の半導体層の前記第1の側面に隣接し、
前記第5の半導体層の前記第2の側面は前記第4の半導体層の前記第2の側面に隣接し、前記第2の電極に直接電気的に結合されるように構成されている、第5の半導体層と、
前記第1のタイプの半導体材料から形成された第6の半導体層であって、前記第6の半導体層は、第1の側面、第2の側面、上面、および下面を有しており、これらは、
前記第6の半導体層の前記下面は前記第5の半導体層の前記上面に結合され、
前記第6の半導体層の前記第1の側面は前記第5の半導体層の前記第1の側面に隣接し、前記第1の電極に直接電気的に結合されており、
前記第6の半導体層の前記第2の側面は前記第5の半導体層の前記第2の側面に隣接するように構成されている、第6の半導体層と、
をさらに備える、請求項15に記載の横型構成電気光学デバイス。 - 前記透光性絶縁層は複数の誘電体層を含むことにより誘電体フィルタを形成している、請求項17に記載の横型構成電気光学デバイス。
- 第1の側面、第2の側面、上面、下面を有する透光性絶縁層であって、これらは、前記透光性絶縁層の前記下面が前記第2の半導体層の前記上面に結合されるように構成されている、透光性絶縁層と、
第3のタイプの半導体材料から形成された第3の半導体層であって、前記第3の半導体層は、第1の側面、第2の側面、上面、および下面を有しており、これらは、
前記第3の半導体層の前記下面は前記透光性絶縁層の前記上面に結合され、
前記第3の半導体層の前記第1の側面は前記第2の半導体層の前記第1の側面に隣接し、前記第1の電極に直接電気的に結合されており、
前記第3の半導体層の前記第2の側面は前記第2の半導体層の前記第2の側面に隣接するように構成されている、第3の半導体層と、
前記第3のタイプの半導体材料と異なる第4のタイプの半導体材料から形成された第4の半導体層であって、前記第4の半導体層は、第1の側面、第2の側面、上面、および下面を有しており、これらは、
前記第4の半導体層の前記下面が前記第3の半導体層の前記上面に結合されて別の接合を形成し、
前記第4の半導体層の前記第1の側面は前記第3の半導体層の前記第1の側面に隣接し、
前記第4の半導体層の前記第2の側面は前記第3の半導体層の前記第2の側面に隣接し、前記第2の電極に直接電気的に結合されるように構成されている、第4の半導体層と、
をさらに備える、請求項1に記載の横型構成電気光学デバイス。 - 前記横型構成電気光学デバイスはエレクトロルミネセンス(EL)デバイスであり、
前記第1のタイプの半導体材料または前記第2のタイプの半導体材料の少なくとも一方は、第1のピーク波長を有する光を出射するように構成された第1のEL材料であり、
前記第3のタイプの半導体材料または前記第4のタイプの半導体材料の少なくとも一方は、第2のピーク波長を有する光を出射するように構成された第2のEL材料である、
請求項19に記載の横型構成電気光学デバイス。 - 前記第3のタイプの半導体材料は前記第1のタイプの半導体材料であり、
前記第4のタイプの半導体材料は前記第2のタイプの半導体材料である、
請求項19に記載の横型構成電気光学デバイス。 - 前記第3のタイプの半導体材料は前記第2のタイプの半導体材料であり、
前記第4のタイプの半導体材料は前記第1のタイプの半導体材料である、
請求項19に記載の横型構成電気光学デバイス。 - 前記透光性絶縁層は複数の誘電体層を含むことにより誘電体フィルタを形成している、請求項19に記載の横型構成電気光学デバイス。
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