CN101593781A - 非线性太阳能电池模块 - Google Patents
非线性太阳能电池模块 Download PDFInfo
- Publication number
- CN101593781A CN101593781A CNA2009102028053A CN200910202805A CN101593781A CN 101593781 A CN101593781 A CN 101593781A CN A2009102028053 A CNA2009102028053 A CN A2009102028053A CN 200910202805 A CN200910202805 A CN 200910202805A CN 101593781 A CN101593781 A CN 101593781A
- Authority
- CN
- China
- Prior art keywords
- photocell
- solar cell
- cell module
- linear solar
- linear
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000006243 chemical reaction Methods 0.000 claims abstract description 23
- 239000000758 substrate Substances 0.000 claims description 17
- 238000005452 bending Methods 0.000 claims description 5
- 229910004613 CdTe Inorganic materials 0.000 claims description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 16
- 239000010409 thin film Substances 0.000 description 7
- 239000013078 crystal Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- -1 for example Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 206010012373 Depressed level of consciousness Diseases 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/0445—PV modules or arrays of single PV cells including thin film solar cells, e.g. single thin film a-Si, CIS or CdTe solar cells
- H01L31/046—PV modules composed of a plurality of thin film solar cells deposited on the same substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
提供了一种非线性太阳能电池模块。非线性太阳能电池模块包括多个光电池,其中,每个光电池包括形成在基底上的第一电极、形成在第一电极上的光电转换层和形成在光电转换层上的第二电极,并且以非线性形状形成光电池。
Description
技术领域
本发明涉及一种非线性太阳能电池模块,更为具体地讲,涉及一种由于以非线性形状形成太阳能电池模块的光电池从而使阴影引起的发电量减少降低的非线性太阳能模块。
背景技术
太阳能电池模块包括串联连接的多个光电池。光电池被分类为晶体型和薄膜型。晶体型光电池一般具有矩形形状,并且主要由多晶硅形成。矩形形状晶体型光电池具有很短的宽度和长度,因此当矩形形状晶体型光电池被云遮蔽时,一个光电池很容易被云的阴影完全地遮蔽。因此,当阴影横跨光电池时,大大地减少了太阳能电池模块的发电量。
薄膜型光电池一般具有长度比晶体型光电池的长度长的矩形形状。因此,一个膜型光电池被阴影完全遮蔽的可能性低。因此,即使当阴影横跨该类型的太阳能电池时,也不会严重影响发电量。
但是,在阴影存在时,还是减少具有薄膜型光电池的太阳能电池模块的发电。
发明内容
为了解决上述和/或其它问题,本发明提供了一种非线性太阳能电池模块,所述非线性太阳能电池模块可使在阴影下发电量的减少降低。
根据本发明的一方面,提供了一种非线性太阳能电池模块,所述太阳能电池模块包括在基底上串联连接的多个光电池,其中,每个光电池包括形成在基底上的第一电极、形成在第一电极上的光电转换层和形成在光电转换层上的第二电极,并且以非线性形状形成光电池。
光电池可具有波形形状或迂回形状。
具有迂回形状的光电池具有多个弯曲,按大约90度形成所述弯曲。
每个光电池可在基底上具有基本上相同的面积。
光电池可具有螺旋形状。
光电转换层可具有PN结结构或PIN结结构。
光电转换层可由非晶硅、CdTe和CIGS之一形成。
附图说明
通过结合附图对本发明示例性实施例进行的详细描述,本发明的上述和其他特点和优点将会变得更清楚,其中:
图1是根据本发明的实施例的薄膜型非线性太阳能电池模块的示意性俯视图;
图2是图1的薄膜型非线性太阳能电池模块的一部分的截面图;
图3示出被相同的阴影遮蔽的现有的薄膜型太阳能电池模块和根据本发明的一个实施例的薄膜型非线性太阳能电池模块;
图4是根据本发明的另一实施例的非线性太阳能电池模块的示意性俯视图;
图5是图4的非线性太阳能电池模块的截面图;和
图6是根据本发明的另一实施例的非线性实施例的示意性俯视图。
具体实施方式
现在将参照附图对本发明进行更全面的描述,本发明的示例性实施例在附图中示出。
图1是根据本发明的实施例的薄膜型非线性太阳能电池模块100的示意性俯视图。图2是图1的薄膜型非线性太阳能电池模块100的一部分的截面图。
参考图1和图2,薄膜型非线性太阳能电池模块100包括多个光电池120。薄膜型非线性太阳能电池模块100可包括数十个光电池120,并且为了获得预定电压,可串联连接光电池120。
每个光电池120包括形成在基底102上的下电极(第一电极)121、形成在下电极121上的光电转换层130和形成在光电转换层130上的上电极122。通过在其间设置的电线140串联地电连接两个光电池120。每个光电池120在基底102上占据基本相同的面积。电线140可以以各种形式连接相邻的光电池120的上电极122和下电极121。因此,由于该类型的连接在本领域是公知的,将省略对其的描述。
基底102可以是硅基底或玻璃基底。
下电极121可由现有的电极材料形成,例如,铝(Al)。
上电极122可由现有的电极材料形成,例如,铝(Al)。另外,上电极122可由透明导电材料(即,诸如铟锡(ITO)的透明导体氧化物)形成,从而阳光可通过上电极122。
抗反射涂层129可形成在除了形成上电极122的区域之外的光电转换层130上。另外,覆盖上电极122的诸如环氧树脂层或玻璃层的保护层(未示出)也可形成在基底102上。
响应于阳光,光电转换层130产生电子-空穴对,并且电子-空穴对的电子和空穴分离并分别向上电极122和下电极121移动。因此,在最外面的上电极122与下电极121之间产生光电流。
光电转换层130具有PN结结构,并且可包括由n-型或p-型半导体材料形成的第一半导体层131和由p-型或n-型半导体材料形成的第二半导体层133。第一半导体层131和第二半导体层133可由非晶硅、CdTe、或Cu-In-Ga-Se(CIGS)形成。
本发明不限于上述光电转换层130的材料和堆叠结构。此外,本发明的实施例中没有描述各种公知的用于制造现有太阳能电池所必须的基本的工艺和元件。
根据本发明的实施例,本征半导体层(例如,本征半导体硅层)可被插入在第一半导体层131和第二半导体层133之间,从而形成PIN结结构。
在图1中,基底102上部的空间可填充绝缘材料,为了方便没有示出该绝缘材料。
图2示出上电极122覆盖光电转换层130的一部分,但是,本发明没有局限于此。例如,上电极可在光电转换层130上形成为多条线线(未示出)。
如图1所示,根据本发明的实施例的光电池120具有非线性形状,例如,在基底102上的波形形状。与现有矩形形状薄膜型太阳能电池的光电池相比,在例如阴影跨过光电池120的情况下,波形形状的光电池120可使发电量的减少降低。
图3示出被相同的阴影(14)遮蔽的现有的薄膜型太阳能电池模块10和根据本发明的实施例的薄膜型非线性太阳能电池模块100。
图3的现有薄膜型太阳能电池模块10(a)包括多个光电池12。光电池12之一被阴影(14)完全地遮蔽,从而被阴影(14)完全遮蔽的光电池12无法产生任何电力。因此,包括串联连接到被阴影(14)遮蔽的光电池12的其它光电池12的现有薄膜型太阳能电池模块100不会产生任何电力。
图3的薄膜型非线性太阳能电池100(b)具有比现有薄膜型太阳能电池模块10的宽度W1大大约两倍的宽度W2。因此,虽然图3的相同面积的阴影(14)遮蔽了薄膜型非线性太阳能电池模块100,但是薄膜型非线性太阳能电池模块100可产生大约正常发电水平的50%的电力。
即使将光电池120形成为具有非线性形状,也可通过使用激光或使用半导体制造工艺来刻蚀下电极121、光电转换层130和上电极122,来形成根据本发明的薄膜型非线性太阳能电池模块100的光电池120。
虽然描述了图1的非线性太阳能模块100是薄膜型,但本发明不限于此。例如,晶体型多晶硅太阳能电池模块的光电池也可以以非线性形状形成。
图4是根据本发明的另一实施例的非线性太阳能电池模块200的示意性俯视图。图5是图4的非线性太阳能电池模块200的截面图。参考图4和图5,非线性太阳能电池模块200包括多个光电池220。非线性太阳能电池模块200可包括数十个光电池220,并且为了获得预定电压,可串联连接光电池220。
每个光电池220包括形成在基底202上的下电极(第一电极)221、形成在下电极221上的光电转换层230和形成在光电转换层230上的上电极222。通过在其间设置的电线240使两个光电池220彼此串联地电连接。每个光电池220在基底202上占据基本相同的面积。
光电转换层230具有PN结结构,并且可包括由n-型或p-型半导体材料形成的第一半导体层231、本征半导体硅层232和由p-型或n-型半导体材料形成的第二半导体层233。
抗反射涂层229可形成在除了形成上电极222的区域之外的光电转换层230上。另外,还可形成覆盖上电极222的诸如环氧树脂层或玻璃层的保护层(未示出)。
根据当前实施例的光电池220具有迂回的形状。与现有矩形形状薄膜型太阳能电池模块10的光电池12以及薄膜型非线性太阳能电池模块100的光电池120相比,具有迂回的形状的每个光电池220在基底202上形成为具有大的覆盖区域。因此,具有迂回形状光电池220可使由于阴影导致的发电量的减少降低。
光电池220的弯曲按大约90度形成,从而可增加每个光电池220在基底202上占据的区域。
图6是根据本发明的另一实施例的非线性太阳能电池模块300的示意性俯视图。参考图6,非线性太阳能电池模块300包括多个光电池320。非线性太阳能电池模块320可包括数十个光电池320,并且为了获得预定电压,可串联连接光电池320。
图6的光电池320的结构基本上可与图2的光电池120和图5的光电池220一样,因此将不再重复描述。
光电池320在基底302上具有螺旋形状。具有螺旋形状的每个光电池320在基底302上形成为具有大的覆盖区域,从而被阴影完全覆盖的可能性低,所以使由于阴影导致的发电量的减少降低。
尽管参照本发明示例性实施例具体地表示和描述了本发明,但是本领域的普通技术人员应该理解,在不脱离由权利要求限定的本发明的精神和范围的情况下,可进行形式和细节上的各种改变。
Claims (7)
1、一种非线性太阳能电池模块,包括在基底上串联连接的多个光电池,
其中,每个光电池包括形成在基底上的第一电极、形成在第一电极上的光电转换层和形成在光电转换层上的第二电极,并且以非线性形状形成光电池。
2、如权利要求1所述的非线性太阳能电池模块,其中,光电池具有波形形状或迂回形状。
3、如权利要求2所述的非线性太阳能电池模块,其中,具有迂回形状的光电池具有多个弯曲,按90度形成所述弯曲。
4、如权利要求2所述的非线性太阳能电池模块,其中,每个光电池在基底上具有相同的面积。
5、如权利要求1所述的非线性太阳能电池模块,其中,光电池具有螺旋形状。
6、如权利要求1所述的非线性太阳能电池模块,其中,光电转换层具有PN结结构或PIN结结构。
7、如权利要求1所述的非线性太阳能电池模块,其中,光电转换层由非晶硅、CdTe和CIGS之一形成。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020080048677 | 2008-05-26 | ||
KR1020080048677A KR20090122728A (ko) | 2008-05-26 | 2008-05-26 | 비선형 태양전지 모듈 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN101593781A true CN101593781A (zh) | 2009-12-02 |
Family
ID=41341178
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CNA2009102028053A Pending CN101593781A (zh) | 2008-05-26 | 2009-05-22 | 非线性太阳能电池模块 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20090288696A1 (zh) |
JP (1) | JP2009290209A (zh) |
KR (1) | KR20090122728A (zh) |
CN (1) | CN101593781A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102237377A (zh) * | 2010-05-03 | 2011-11-09 | 杜邦太阳能有限公司 | 旁路二极管与薄膜太阳能模块的单片集成 |
CN104115283A (zh) * | 2011-12-09 | 2014-10-22 | Lg伊诺特有限公司 | 太阳能电池模块及其制造方法 |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20100288335A1 (en) * | 2009-10-02 | 2010-11-18 | Sunlight Photonics Inc. | Degradation-resistant photovoltaic devices |
WO2012068230A2 (en) * | 2010-11-16 | 2012-05-24 | Michael Gurin | Non-linear solar receiver |
FR2992466A1 (fr) * | 2012-06-22 | 2013-12-27 | Soitec Silicon On Insulator | Procede de realisation de contact pour led et structure resultante |
JP5997021B2 (ja) * | 2012-11-28 | 2016-09-21 | 京セラ株式会社 | 光電変換装置およびその製造方法 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5998729A (en) * | 1997-04-11 | 1999-12-07 | Canon Kabushiki Kaisha | Solar cell module having improved flexibility |
US6632993B2 (en) * | 2000-10-05 | 2003-10-14 | Kaneka Corporation | Photovoltaic module |
WO2006110341A2 (en) * | 2005-04-01 | 2006-10-19 | North Carolina State University | Nano-structured photovoltaic solar cells and related methods |
US20070215195A1 (en) * | 2006-03-18 | 2007-09-20 | Benyamin Buller | Elongated photovoltaic cells in tubular casings |
TWI317561B (en) * | 2006-09-07 | 2009-11-21 | Ind Tech Res Inst | Solar cells and modules comprising the same |
CN101868861B (zh) * | 2007-09-13 | 2013-01-02 | 加斯·戴 | 能量接收面板中的三维光电模块 |
-
2008
- 2008-05-26 KR KR1020080048677A patent/KR20090122728A/ko not_active Application Discontinuation
-
2009
- 2009-04-01 US US12/385,193 patent/US20090288696A1/en not_active Abandoned
- 2009-05-15 JP JP2009118783A patent/JP2009290209A/ja not_active Withdrawn
- 2009-05-22 CN CNA2009102028053A patent/CN101593781A/zh active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102237377A (zh) * | 2010-05-03 | 2011-11-09 | 杜邦太阳能有限公司 | 旁路二极管与薄膜太阳能模块的单片集成 |
CN104115283A (zh) * | 2011-12-09 | 2014-10-22 | Lg伊诺特有限公司 | 太阳能电池模块及其制造方法 |
CN104115283B (zh) * | 2011-12-09 | 2017-05-17 | Lg伊诺特有限公司 | 太阳能电池模块及其制造方法 |
Also Published As
Publication number | Publication date |
---|---|
KR20090122728A (ko) | 2009-12-01 |
JP2009290209A (ja) | 2009-12-10 |
US20090288696A1 (en) | 2009-11-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US9515214B2 (en) | Solar battery module and manufacturing method thereof | |
US11811360B2 (en) | High voltage solar modules | |
US8138410B2 (en) | Optical tandem photovoltaic cell panels | |
EP3544060B1 (en) | Photovoltaic lamination assembly with bypass diodes | |
TWI603493B (zh) | 太陽能電池及其模組 | |
CN106057923B (zh) | 一种背接触太阳能电池及太阳能电池组件 | |
KR20170124639A (ko) | 태양 전지의 제조를 위한 공정 및 구조물 | |
US9337357B2 (en) | Bifacial solar cell module | |
KR101733687B1 (ko) | 태양전지 모듈 | |
US20120132246A1 (en) | Photovoltaic modules with improved electrical characteristics and methods thereof | |
EP3016148A1 (en) | Dual layer photovoltaic device | |
CN101593781A (zh) | 非线性太阳能电池模块 | |
US20140209151A1 (en) | Solar cell module | |
US20230044021A1 (en) | Solar cells having junctions retracted from cleaved edges | |
CN111213235A (zh) | 具有四端叠层太阳能电池布置的太阳能电池板 | |
JP2015207598A (ja) | 太陽電池モジュール、太陽電池およびこれに用いられる素子間接続体 | |
EP2375455B1 (en) | Voltage matched multijunction solar cell | |
KR102511697B1 (ko) | 셀 레벨 배선에 의해 연결되는 복수 개의 서브셀을 구비한 태양 전지 | |
KR102374145B1 (ko) | 태양 전지 패널 | |
KR20190056550A (ko) | Mwt형 양면수광 태양전지 및 와이어 인터커넥터를 이용한 태양전지 모듈 | |
US20130312821A1 (en) | Solar cell | |
EP2450968B1 (en) | Solar photovoltaic device | |
CN107924958B (zh) | 光电转换元件 | |
TWI643353B (zh) | 太陽電池模組及其製造方法 | |
US20230231065A1 (en) | Tandem solar cell |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SAMSUNG SDI CO., LTD. |
|
C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20110907 Address after: Gyeonggi Do Korea Suwon Applicant after: Samsung Electronics Co., Ltd. Co-applicant after: Samsung SDI Co., Ltd. Address before: Gyeonggi Do Korea Suwon Applicant before: Samsung Electronics Co., Ltd. |
|
C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20091202 |