JP5137356B2 - 集積回路装置 - Google Patents

集積回路装置 Download PDF

Info

Publication number
JP5137356B2
JP5137356B2 JP2006225479A JP2006225479A JP5137356B2 JP 5137356 B2 JP5137356 B2 JP 5137356B2 JP 2006225479 A JP2006225479 A JP 2006225479A JP 2006225479 A JP2006225479 A JP 2006225479A JP 5137356 B2 JP5137356 B2 JP 5137356B2
Authority
JP
Japan
Prior art keywords
substrate
integrated circuit
film
circuit device
insulating film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006225479A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007096279A (ja
JP2007096279A5 (enExample
Inventor
卓也 鶴目
直人 楠本
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006225479A priority Critical patent/JP5137356B2/ja
Publication of JP2007096279A publication Critical patent/JP2007096279A/ja
Publication of JP2007096279A5 publication Critical patent/JP2007096279A5/ja
Application granted granted Critical
Publication of JP5137356B2 publication Critical patent/JP5137356B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2006225479A 2005-09-02 2006-08-22 集積回路装置 Expired - Fee Related JP5137356B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006225479A JP5137356B2 (ja) 2005-09-02 2006-08-22 集積回路装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005254481 2005-09-02
JP2005254481 2005-09-02
JP2006225479A JP5137356B2 (ja) 2005-09-02 2006-08-22 集積回路装置

Publications (3)

Publication Number Publication Date
JP2007096279A JP2007096279A (ja) 2007-04-12
JP2007096279A5 JP2007096279A5 (enExample) 2009-09-10
JP5137356B2 true JP5137356B2 (ja) 2013-02-06

Family

ID=37981542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006225479A Expired - Fee Related JP5137356B2 (ja) 2005-09-02 2006-08-22 集積回路装置

Country Status (1)

Country Link
JP (1) JP5137356B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4973328B2 (ja) * 2007-06-14 2012-07-11 株式会社デンソー 半導体装置
CN104157694A (zh) 2009-09-30 2014-11-19 大日本印刷株式会社 薄膜元件用基板、薄膜元件、薄膜晶体管及其制造方法
US20110186899A1 (en) * 2010-02-03 2011-08-04 Polymer Vision Limited Semiconductor device with a variable integrated circuit chip bump pitch
JP2011233858A (ja) * 2010-04-09 2011-11-17 Dainippon Printing Co Ltd 薄膜素子用基板の製造方法、薄膜素子の製造方法、薄膜トランジスタの製造方法、薄膜素子、および薄膜トランジスタ
JP2014082253A (ja) * 2012-10-15 2014-05-08 Nippon Hoso Kyokai <Nhk> 積層型半導体装置、半導体チップならびに積層型半導体装置の製造方法
US20220037778A1 (en) * 2018-12-25 2022-02-03 Toray Industries, Inc. Method for manufacturing wireless communication device, wireless communication device, and assembly of wireless communication devices
KR20220096469A (ko) * 2020-12-31 2022-07-07 엘지디스플레이 주식회사 중첩된 화소 구동부들을 포함하는 표시장치

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3506054B2 (ja) * 1999-07-23 2004-03-15 日本電気株式会社 半導体装置及び半導体装置の製造方法
JP2002246514A (ja) * 2001-02-14 2002-08-30 Fuji Electric Co Ltd 半導体装置
JP4483123B2 (ja) * 2001-05-07 2010-06-16 ソニー株式会社 ３次元半導体チップ及びその製造方法
JP3791459B2 (ja) * 2002-05-27 2006-06-28 株式会社デンソー 半導体装置およびその製造方法
JP4238998B2 (ja) * 2004-03-18 2009-03-18 セイコーエプソン株式会社 電気デバイス

Also Published As

Publication number Publication date
JP2007096279A (ja) 2007-04-12

Similar Documents

Publication Publication Date Title
US7723842B2 (en) Integrated circuit device
CN1905164B (zh) 半导体装置及其制造方法
JP5430846B2 (ja) 半導体装置の作製方法
US7840188B2 (en) Semiconductor device
US7888242B2 (en) Formation method of single crystal semiconductor layer, formation method of crystalline semiconductor layer, formation method of polycrystalline layer, and method for manufacturing semiconductor device
CN1893033B (zh) 制造半导体器件的方法
KR101443176B1 (ko) 반도체 장치 및 그것의 제작 방법
KR20090083362A (ko) 반도체 디바이스 및 이의 제작 방법
JP4566475B2 (ja) 発光装置の作製方法
JP5296360B2 (ja) 半導体装置およびその作製方法
JP5137356B2 (ja) 集積回路装置
US7625783B2 (en) Semiconductor element and method for manufacturing the same
JP5127178B2 (ja) 半導体装置の作製方法
US7588969B2 (en) Method for manufacturing semiconductor device, and semiconductor device
JP2014090186A (ja) 半導体装置の作製方法
JP5834101B2 (ja) 表示装置
JP4749102B2 (ja) 半導体装置の作製方法
JP2008164794A (ja) 表示装置及び表示システム
JP5183910B2 (ja) 半導体素子の作製方法
JP2006270945A (ja) 半導体装置及びそれを用いた電子機器

Legal Events

Date Code Title Description
RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20090525

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090727

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20090727

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120625

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120703

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120809

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120911

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20121012

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121106

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121113

R150 Certificate of patent or registration of utility model

Ref document number: 5137356

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

Free format text: JAPANESE INTERMEDIATE CODE: R150

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151122

Year of fee payment: 3

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees