JP5129399B2 - 投影露光装置へ電磁放射を案内する装置 - Google Patents
投影露光装置へ電磁放射を案内する装置 Download PDFInfo
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- JP5129399B2 JP5129399B2 JP2012022761A JP2012022761A JP5129399B2 JP 5129399 B2 JP5129399 B2 JP 5129399B2 JP 2012022761 A JP2012022761 A JP 2012022761A JP 2012022761 A JP2012022761 A JP 2012022761A JP 5129399 B2 JP5129399 B2 JP 5129399B2
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- fiber
- projection exposure
- exposure apparatus
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
- G03F7/70891—Temperature
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
- G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
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- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Toxicology (AREA)
- Engineering & Computer Science (AREA)
- Environmental & Geological Engineering (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Description
Claims (7)
- 半導体リソグラフィ用の投影露光装置(11)に電磁放射(15)を光ファイバ(1、1’、1”)で案内する装置において、前記ファイバ(1、1’、1”)の一部分の機械的操作のためにアクチュエータ(2,8,14)が設けられ、その結果として、前記ファイバ(1、1’、1”)の射出端に出現する電磁放射の強度プロファイルが時間的に平均化され均一化されることが達成でき、前記投影露光装置はEUV投影露光装置(11)であって、前記電磁放射(15)はEUV投影露光装置(11)内の光学素子(12)を加熱する働きをすることを特徴とする装置。
- 前記電磁放射(15)は1064nm〜1550nmの波長範囲内であることを特徴とする請求項1に記載の装置。
- 前記電磁放射(15)の光源としてファイバレーザ(13)が存在することを特徴とする請求項1または2に記載の装置。
- 前記ファイバはステップインデックスプロファイルを有するマルチモードファイバ(1、1’、1”)であることを特徴とする請求項1〜3のいずれかに記載の装置。
- 前記アクチュエータ(2,8,14)は前記ファイバ(1、1’、1”)の一部分を横方向運動させるのに適していることを特徴とする請求項1〜4のいずれかに記載の装置。
- 前記アクチュエータ(2,8,14)は前記ファイバ(1、1’、1”)の一部分においてファイバ断面を可逆的に変化させるのに適していることを特徴とする請求項1〜4のいずれかに記載の装置。
- 請求項1〜6のいずれかに記載の装置を備えることを特徴とする半導体リソグラフィ用の投影露光装置(11)。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE102011004375A DE102011004375B3 (de) | 2011-02-18 | 2011-02-18 | Vorrichtung zur Führung von elektromagnetischer Strahlung in eine Projektionsbelichtungsanlage |
DE102011004375.6 | 2011-02-18 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012175102A JP2012175102A (ja) | 2012-09-10 |
JP5129399B2 true JP5129399B2 (ja) | 2013-01-30 |
Family
ID=46050024
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2012022761A Active JP5129399B2 (ja) | 2011-02-18 | 2012-02-06 | 投影露光装置へ電磁放射を案内する装置 |
Country Status (3)
Country | Link |
---|---|
US (1) | US9310701B2 (ja) |
JP (1) | JP5129399B2 (ja) |
DE (1) | DE102011004375B3 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE102008016011A1 (de) | 2007-03-27 | 2008-10-02 | Carl Zeiss Smt Ag | Korrektur optischer Elemente mittels flach eingestrahltem Korrekturlicht |
DE102021212679A1 (de) * | 2021-11-11 | 2023-05-11 | Carl Zeiss Smt Gmbh | Optisches System, insbesondere in einer mikrolithographischen Projektionsbelichtungsanlage |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63173322A (ja) * | 1987-01-13 | 1988-07-16 | Toshiba Corp | 半導体露光装置 |
DE4301716C2 (de) * | 1992-02-04 | 1999-08-12 | Hitachi Ltd | Projektionsbelichtungsgerät und -verfahren |
KR100841147B1 (ko) * | 1998-03-11 | 2008-06-24 | 가부시키가이샤 니콘 | 레이저 장치, 자외광 조사 장치 및 방법, 물체의 패턴 검출장치 및 방법 |
US6142641A (en) * | 1998-06-18 | 2000-11-07 | Ultratech Stepper, Inc. | Four-mirror extreme ultraviolet (EUV) lithography projection system |
DE10000191B8 (de) | 2000-01-05 | 2005-10-06 | Carl Zeiss Smt Ag | Projektbelichtungsanlage der Mikrolithographie |
JP2003257834A (ja) * | 2002-03-04 | 2003-09-12 | Toshiba Corp | 半導体装置の製造方法及び半導体装置の製造装置 |
US7016018B2 (en) * | 2003-06-04 | 2006-03-21 | Fuji Photo Film Co., Ltd. | Exposure device |
JP2005046247A (ja) * | 2003-07-31 | 2005-02-24 | Topcon Corp | レーザ手術装置 |
WO2005022614A1 (ja) | 2003-08-28 | 2005-03-10 | Nikon Corporation | 露光方法及び装置、並びにデバイス製造方法 |
US7502101B2 (en) * | 2005-02-25 | 2009-03-10 | Nanometrics Incorporated | Apparatus and method for enhanced critical dimension scatterometry |
DE102005031792A1 (de) * | 2005-07-07 | 2007-01-11 | Carl Zeiss Smt Ag | Verfahren zur Entfernung von Kontamination von optischen Elementen, insbesondere von Oberflächen optischer Elemente sowie ein optisches System oder Teilsystem hierfür |
US20100290020A1 (en) * | 2009-05-15 | 2010-11-18 | Shinichi Mori | Optical apparatus, exposure apparatus, exposure method, and method for producing device |
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2011
- 2011-02-18 DE DE102011004375A patent/DE102011004375B3/de active Active
-
2012
- 2012-02-06 JP JP2012022761A patent/JP5129399B2/ja active Active
- 2012-02-08 US US13/368,455 patent/US9310701B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
DE102011004375B3 (de) | 2012-05-31 |
US20120212720A1 (en) | 2012-08-23 |
US9310701B2 (en) | 2016-04-12 |
JP2012175102A (ja) | 2012-09-10 |
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