JP5125002B2 - Electro-optical device and electronic apparatus - Google Patents

Description

  The present invention relates to a technical field of an electro-optical device such as a liquid crystal panel, and an electronic apparatus such as a liquid crystal projector including the electro-optical device.

  This type of electro-optical device is generally driven on the basis of an image signal subjected to serial-parallel conversion. For example, in a liquid crystal device, a plurality of data lines wired to an image display area on a substrate are divided into blocks every predetermined number, and serial-parallel converted image signals are included in the block in block units. The data line is supplied via a sampling switch. Thus, a predetermined number of data lines are simultaneously driven and a plurality of data lines are sequentially driven every predetermined number.

  In this case, the plurality of image signal lines are arranged in the peripheral region of the substrate, and further, from the image signal lines to the sampling switches, branch lines and branch lines formed of a relatively high resistance conductive film such as conductive polysilicon. They are connected by a lower resistance auxiliary relay wiring. The plurality of branch lines are arranged in a direction crossing the wiring direction of the plurality of image signal lines corresponding to the arrangement of the plurality of data lines (see, for example, Patent Document 1).

Japanese Patent No. 36038887

  In this type of electro-optical device, the wiring lengths of the plurality of branch wirings differ from each other depending on the arrangement of the image signal lines. In addition, when the branch wiring is formed of a relatively high resistance conductive film such as conductive polysilicon, the resistance of the branch wiring is different depending on the wiring length. By doing so, the electrical resistances of the branch wirings are made uniform, and luminance unevenness among the pixels is reduced.

  However, when a resistance portion is added to the branch wiring, the length of the wiring portion including the branch wiring and the resistance portion increases according to the size of the resistance portion, and the size of the electro-optical device increases accordingly. There is a problem.

  In addition, when the light emitted from the light source or the light reflected on the counter substrate side facing the substrate enters the region where the image signal lines and the branch wirings are formed on the substrate, the electrical There is also a problem that an image of a pattern such as an image signal line is reflected on a projection screen on which an image is projected by an electronic device such as a projector including an optical device, thereby degrading display quality.

  Accordingly, the present invention has been made in view of the above-described problems, for example, and provides an electro-optical device that can be reduced in size and that can improve display quality, and an electronic apparatus including the same. Is an issue.

In order to solve the above problems, an electro-optical device according to the present invention includes a pair of substrates bonded via a sealing material, a data line provided in a pixel region on one substrate of the pair of substrates, An image signal line provided outside the pixel region, a branch wiring electrically connected to the image signal line and arranged corresponding to the data line, and supplied from the image signal line through the branch wiring A sampling circuit including a sampling switch for supplying the image signal to the data line, and a data line driving circuit disposed inside an outer edge of the seal material, and the image signal line and the branch wiring are A first light-shielding film disposed between the sampling circuit and the data line driving circuit and overlying at least a part of the image signal line or the branch wiring on the one substrate; On the other substrate out of the serial pair of substrates, apart from the said sealing member inside the sealing member, with said first light shielding film to partially overlap the second light shielding film overlaps with said sampling circuit Is provided.

  According to the electro-optical device of the present invention, at the time of driving, the N image signals subjected to serial-parallel conversion are supplied to the N image signal lines, and further, the branches are arranged corresponding to the data lines. Supplied to the wiring. For example, one end of each branch wiring is electrically connected to the image signal line through a contact hole opened in an interlayer insulating layer that insulates the branch wiring from the image signal line. For example, in order to realize high-definition image display while suppressing an increase in driving frequency, the N image signals are converted into serial image signals, for example, three-phase, six-phase, twelve-phase, twenty-four-phase,. ... Are generated by being converted into a plurality of parallel image signals.

  In parallel with the supply of the image signal, the data line driving circuit sequentially supplies the sampling signal for each sampling switch corresponding to the data line group, for example. Then, N image signals are sequentially supplied to the plurality of data lines by the sampling circuit for each data line group according to the sampling signal. Therefore, data lines belonging to the same data line group are driven simultaneously.

  When the data line is driven in this manner, in each pixel portion, for example, the pixel electrode is selected in accordance with a scanning signal supplied from the scanning line driving circuit via the scanning line, and a TFT or the like that performs a switching operation is selected. An image signal is supplied to the pixel electrode from the data line via the pixel switching element. Thereby, for example, a liquid crystal element as a display element performs image display based on the supplied image signal.

  The light shielding film, for example, overlaps at least part of the N image signal lines and the plurality of branch wirings in a peripheral region extending around the pixel region on the substrate on which a switching element such as a TFT is formed. Therefore, according to the light shielding film, it is possible to reduce at least a part of the N image signal lines and the plurality of branch wirings from appearing on the projection screen.

  Each of the N image signal lines, the plurality of branch wirings, and the light shielding film is formed in the same layer as each of the plurality of metal films formed in different layers in the pixel region. More specifically, each of the N image signal lines, the plurality of branch wirings, and the light shielding film includes, for example, various elements or wirings formed in a pixel region that is a display region in which a plurality of pixels are arranged. Are formed in the same layer as each of the plurality of metal films formed as a part of the metal film. Such a plurality of metal films are formed in different layers in the pixel region on the substrate in accordance with the layout of various elements or wirings in the pixel region.

  For example, each of the N image signal lines, the plurality of branch wirings, and the light shielding film is formed of a plurality of metal films formed in the same layer as each of the N image signal lines, the plurality of branch wirings, and the light shielding film. Each is formed as the same film by a common process. Therefore, the process of forming various elements or wirings in the pixel region and the process of forming the N image signal lines, the plurality of branch wirings, and the light shielding film can be shared, and the number of manufacturing processes of the electro-optical device is reduced. it can.

  Such a plurality of metal films are metal films having a single layer or a multilayer structure including a metal such as Al having a lower electric resistance than a semiconductor such as conductive polysilicon. Therefore, according to such a low resistance metal film, the electrical resistance of these branch wirings is so small that the difference between the electrical resistances of these branch wirings can be ignored. It is possible to reduce luminance unevenness caused by the difference in electrical resistance) and to shorten the length of the branch wiring. As described above, according to the electro-optical device according to the present invention, since the branch wiring can be shortened, a region where the branch wiring is formed in the peripheral region can be reduced, and the size of the electro-optical device can be reduced.

  As described above, according to the electro-optical device according to the present invention, the display performance of a projector or the like including the electro-optical device can be improved, the manufacturing cost can be reduced, and the electro-optical device can be downsized.

In one aspect of the electro-optical device according to the invention, the pixel region includes a pixel electrode,
The branch wiring is formed in the same layer as the data line, and the image signal line and the first light shielding film are formed in the same layer as a metal film formed between the data line and the pixel electrode. Is formed .

  According to this aspect, the data line provided in the pixel region and the pair of electrodes of the storage capacitor, and the image signal line, the branch wiring, and the light shielding film are formed in the same layer. It can be composed of a metal film. The combination of the data line, the pair of electrodes, and the plurality of metal films can be conveniently selected according to various conditions such as the design and layout of the electro-optical device, but from the viewpoint of more reliably shielding the substrate. If it sees, it is more preferable that the light shielding film is formed in the same layer as the metal film formed in the uppermost layer or the lowermost layer among the plurality of metal films.

In another aspect of the electro-optical device according to the invention, the electro-optical device further includes a storage capacitor that is electrically connected to the pixel electrode and holds the image signal, and the first light-shielding film includes a pair of the storage capacitors . The electrode is formed in the same layer as the fixed potential side electrode.

  According to this aspect, when the fixed potential side electrode which is one of the pair of electrodes is formed, the light shielding film can be formed in a step common to the step of forming the fixed potential side electrode.

In another aspect of the electro-optical device according to the invention, the data line driving circuit supplies a sampling signal to the sampling switch .

  According to this aspect, for example, the fixed potential can be supplied to the fixed potential side electrode by electrically connecting the light shielding film to the external circuit connection terminal electrically connected to the power source that supplies the fixed potential.

In another aspect of the electro-optical device according to the invention, an external connection terminal provided on the one substrate is further provided, and the external connection terminal is provided outside an outer edge of the sealing material .

  According to this aspect, for example, a part of a process of forming a transistor such as a TFT formed on a substrate as a sampling switch can be shared with a process of forming a branch wiring.

  In order to solve the above problems, an electronic apparatus according to the present invention includes the above-described electro-optical device of the present invention.

  According to the electronic apparatus according to the present invention, since the electro-optical device according to the present invention described above is included, a projection display device such as a liquid crystal projector capable of high-quality display, a mobile phone, an electronic notebook, and a word processor. Various electronic devices such as a viewfinder type or a monitor direct view type video tape recorder, a workstation, a videophone, a POS terminal, and a touch panel can be realized. In addition, as an electronic apparatus according to the present invention, for example, an electrophoretic device such as electronic paper can be realized.

  Such an operation and other advantages of the present invention will become apparent from the embodiments described below.

<1-1: Overall Configuration of Electro-Optical Device>
First, an overall configuration of a liquid crystal device which is an example of an electro-optical device according to the present embodiment will be described with reference to FIGS. 1 and 2. FIG. 1 is a plan view showing the configuration of the liquid crystal device according to this embodiment, and FIG. 2 is a cross-sectional view taken along the line II-II ′ of FIG. As described in detail below, the light shielding film 54 corresponds to an example of the “light shielding film” of the present invention.

  1 and 2, in the liquid crystal device 1 according to the present embodiment, a TFT array substrate 10 and an opposite substrate 20 which are examples of the “substrate” according to the present invention are arranged to face each other. A liquid crystal layer 50 is sealed between the TFT array substrate 10 and the counter substrate 20, and the TFT array substrate 10 and the counter substrate 20 are surrounded by an image display region 10a that is a pixel region in which a plurality of pixels are arranged. They are bonded to each other by a sealing material 52 provided in a sealing region located in the area. A dustproof substrate 120b made of a transparent material such as glass is disposed on the lower surface of the TFT array substrate 10, and a dustproof material made of the same material as the dustproof substrate 120b is placed on the upper surface of the counter substrate 20. A substrate 120a is disposed.

  In the image display area 10a on the TFT array substrate 10, a plurality of pixel portions 72 arranged in a matrix are formed as will be described in detail later. Such a pixel portion 72 includes, for example, a semiconductor element such as a TFT as a switching element, and is electrically connected to a scanning line and a data line extending to the image display region 10a. The TFT array substrate 10 is a substrate in which a transparent substrate such as a glass substrate or a quartz substrate and a multilayer structure including an insulating film are formed on the transparent substrate. Similarly to the TFT array substrate 10, the counter substrate 20 also has a transparent substrate such as a glass substrate and a multilayer structure formed on the transparent substrate.

  In FIG. 1, a light-shielding frame light-shielding film 53 that defines the frame area of the image display area 10a among the peripheral areas extending around the image display area 10a in parallel with the inside of the seal area where the seal material 52 is disposed. Are provided on the counter substrate 20 side. On the TFT array substrate 10, the sampling circuit 200 and the scanning line driving circuit 104 are formed in a region overlapping the frame region where the frame light shielding film 53 is formed. Therefore, the sampling circuit 200 and the scanning line driving circuit 104 are shielded from light by the frame light shielding film 53.

  Out of the peripheral area extending around the image display area 10 a, the external circuit connection terminal 102 is provided along one side of the TFT array substrate 10 in an area located outside the seal area where the sealing material 52 is disposed. Yes. The sampling circuit 200 is provided so as to overlap the frame region extending inward from the seal region along one side. The scanning line driving circuit 104 is provided in a frame region extending inside the seal region along two sides adjacent to the one side. On the TFT array substrate 10, vertical conduction terminals 106 for connecting the two substrates with the vertical conduction material 107 are arranged in regions facing the four corner portions of the counter substrate 20. With these vertical conduction terminals 106, electrical conduction can be established between the TFT array substrate 10 and the counter substrate 20.

  1 and 2, the light shielding film 54 is formed on the TFT array substrate 10 outside the frame area where the frame light shielding film 53 is formed in the peripheral area extending outside the image display area 10a. The data line driving circuit 101 and the lead wiring 90 are covered with the light shielding film 54. The lead wiring 90 electrically connects the external circuit connection terminal 102 to the data line driving circuit 101, the scanning line driving circuit 104, the vertical conduction terminal 106, and the like. In FIG. 2, the light shielding film 54 and the data line driving circuit 101 are electrically insulated from each other by an insulating film (not shown).

  The light shielding film 54 reflects the incident light that has not been shielded by the frame light shielding film 53 and the light reflected by the light shielding film 54 by the frame light shielding film 53 and enters the TFT array substrate 10 from the outside of the frame region. Block out light. Therefore, in the peripheral area of the image display area 10a, it is possible to reduce the projection of the pattern image of elements or wirings included in the circuit portion built in the TFT array substrate 10 onto the projection screen. For example, since the light irradiated to the data line driving circuit 101 and the routing wiring 90 is blocked by the light shielding film 54, the pattern image of the data line driving circuit 101 and the routing wiring 90 is prevented from being projected onto the projection screen. it can. The light shielding film 54 may extend to the frame region where the light shielding film 53 is formed, and may shield the sampling circuit 200 from light.

  When the light-shielding film is provided on the dust-proof substrate 120a, the light-shielding film 54 is not reflected even if the reflected light reflected by the light-shielding film provided on the dust-proof substrate 120a enters the peripheral region. It is possible to reduce the incidence on the TFT array substrate 10 from the region, and it is possible to reduce the projection of the pattern image described above onto the projection film.

  The light shielding film 54 is formed in the same layer as each of the different metal films formed in the image display region 10a. Therefore, the light shielding film 54 can be easily formed as compared with the case where the light shielding film is separately formed on the dustproof substrate. In particular, since the light-shielding film 54 is formed as the same film as the metal film by a process common to the process of forming such a metal film, a part of the elements and the like formed in the image display region 10a in one process. The metal film and the light shielding film 54 can be formed, and the cost required for manufacturing the liquid crystal device 1 can be reduced as compared with the case where the light shielding film is separately formed on the dustproof substrate 120a.

  The light shielding film 54 may be a single layer made of a metal film having a light shielding property or a film having a multilayer structure in which a plurality of metal films are laminated to each other, and includes a light reflection preventing film in addition to the metal film. You may go out. When the light shielding film 54 includes the light reflection film preventing film, the reflected light reflected by the light shielding film 54 can be reduced as compared with the case where the light shielding film 54 is formed only by the metal film. Therefore, the ratio of the stray light incident on the TFT array substrate 10 out of the reflected light reflected by the light shielding film can be reduced. In particular, in order to practically sufficiently reduce the reflected light reflected by the light shielding film 54, it is preferable to set the OD (Optical Density) value of the light shielding film 54 to 4 or more.

  The light shielding film 54 and the counter electrode 21 may be electrically connected to each other via the counter electrode potential line 99 and the vertical conduction terminal 106. The vertical conduction terminal 106 is electrically connected to the external connection terminal 102 that is electrically connected to a power source that supplies a common potential (LCCOM) that is a fixed potential among the external connection terminals 102 via one of the lead wires 90. It may be connected. Accordingly, the potentials of the light shielding film 54 and the counter electrode 21 can be maintained at a fixed potential. Therefore, the liquid crystal in the frame region (liquid crystal molecules that are between the light shielding film 54 and the counter electrode and do not contribute to display) is always in a no-voltage applied state, and the liquid crystal in the image display region 10a (particularly, the region along the frame) Since no extra voltage is applied, the display is not adversely affected.

  In addition, since no direct current component is applied to the frame liquid crystal, the liquid crystal is not deteriorated. This is because when the liquid crystal in the frame area deteriorates, the deterioration also propagates to the liquid crystal in the image display area 10a.

  In FIG. 2, on the TFT array substrate 10, a multilayer in which wiring such as TFT (Thin Film Transistor) used as a pixel switching element which is a driving element for controlling alignment of liquid crystal, a scanning line, and a data line is formed. A structure is formed. In the image display area 10a, a pixel electrode 9a is provided in an upper layer of wiring such as a pixel switching TFT, a scanning line, and a data line. On the other hand, on the surface of the counter substrate 20 facing the TFT array substrate 10, a light shielding film (not shown) that defines the opening area of each pixel in the image display area 10a, that is, the area through which light is substantially transmitted in the pixel. ing. A counter electrode 21 made of a transparent material such as ITO is formed on the surface of the counter substrate 20 facing the TFT array substrate 10 so as to face the plurality of pixel electrodes 9a. The alignment films 16 and 22 are respectively formed on the TFT array substrate 10 and the counter substrate 20.

  The alignment state of the liquid crystal layer 50 is controlled according to the potential difference between the pixel electrode 9a and the counter electrode 21, that is, the applied voltage applied to the liquid crystal, and a predetermined image is displayed in the image display region 10a. On the TFT array substrate 10, in addition to the data line driving circuit 101 and the scanning line driving circuit 104, an inspection circuit for inspecting quality, defects, etc. of the liquid crystal device during manufacturing or at the time of shipment, and an inspection pattern Etc. may be formed.

<1-2: Electrical connection configuration of electro-optical device>
Next, an electrical connection configuration of the liquid crystal device 1 will be described with reference to FIGS. 3 and 4. FIG. 3 is a block diagram showing the liquid crystal device 1 together with its peripheral circuit portion, and FIG. 4 is a block diagram showing the electrical configuration of the liquid crystal device 1. FIG. 5 is a block diagram showing an electrical connection configuration between the image signal line and the branch wiring, and the sampling circuit and the data line driving circuit.

  In FIG. 3, the liquid crystal device 1 is electrically connected to an image signal supply circuit 1300, a timing control circuit 1400, and a power supply circuit 700 provided as external circuits.

  The timing control circuit 1400 is configured to output various timing signals used in each unit. A timing signal output means that is a part of the timing control circuit 1400 creates a dot clock that is a minimum unit clock and scans each pixel. Based on this dot clock, a Y clock signal CLY and an inverted Y clock signal are generated. CLYinv, X clock signal CLX, inverted X clock signal XCLinv, Y start pulse DY and X start pulse DX are generated.

  One line of input image data VID is input to the image signal supply circuit 1300 from the outside. The image signal supply circuit 1300 serial-parallel converts one system of input image data VID to generate N-phase, in this embodiment, six-phase (N = 6) image signals VID1 to VID6. Further, in the image signal supply circuit 1300, each voltage of the image signals VID1 to VID6 is inverted to a positive polarity and a negative polarity with respect to a predetermined reference potential, and the image signals VID1 to VID6 thus inverted in polarity are output. You may be made to do.

  The power supply circuit 700 supplies a common potential LCCOM that is a fixed potential to the counter electrode 21 shown in FIG. In the present embodiment, the counter electrode 21 is formed on the lower side of the counter substrate 20 shown in FIG. 2 so as to face the plurality of pixel electrodes 9a.

  Next, an electrical connection configuration of the liquid crystal device 1 will be described.

  As shown in FIG. 4, the liquid crystal device 1 includes an internal drive circuit including a scanning line drive circuit 104, a data line drive circuit 101, and a sampling circuit 200 in a peripheral region extending around the image display region 10 a on the TFT array substrate 10. Is provided.

  The scanning line driving circuit 104 is supplied with a Y clock signal CLY, an inverted Y clock signal CLYinv, and a Y start pulse DY. When the Y start pulse DY is input, the scanning line driving circuit 104 sequentially generates and outputs the scanning signals Y1,..., Ym at a timing based on the Y clock signal CLY and the inverted Y clock signal CLYinv.

  The data line driving circuit 101 is supplied with an X clock signal CLX, an inverted X clock signal CLXinv, and an X start pulse DX. When the X start pulse DX is input, the data line driving circuit 101 sequentially generates and outputs sampling signals S1,..., Sn at a timing based on the X clock signal CLX and the inverted X clock signal XCLXinv.

  The sampling circuit 200 includes a plurality of sampling switches 202 configured from P-channel or N-channel single-channel TFTs or complementary TFTs.

  The liquid crystal device 1 further includes data lines 114 and scanning lines 112 wired vertically and horizontally in the image display area 10a occupying the center of the TFT array substrate, and each pixel unit 72 corresponding to the intersection point is arranged in a matrix. A pixel electrode 9 a for applying a voltage to the arranged liquid crystal elements 118 and a TFT 30 for switching control of conduction between the pixel electrode 9 a and the data line 114 are provided. In this embodiment, the total number of scanning lines 112 is assumed to be m (where m is a natural number of 2 or more), and the total number of data lines 114 is assumed to be n (where n is a natural number of 2 or more). To do.

  The liquid crystal device 1 includes six (that is, N = 6) image signal lines 171 to which image signals VID1 to VID6 serially and parallelly developed into six phases by the image signal supply circuit 1300 are supplied. As will be described below, the n data lines 114 are sequentially driven for each data line group including six data lines 114 corresponding to the number of image signal lines 171 as a group.

  A sampling signal Si (i = 1, 2,..., N) is sequentially supplied from the data line driving circuit 101 to each sampling switch 202 corresponding to the data line group, and each sampling switch 202 is set according to the sampling signal Si. Turns on. As will be described later, each sampling switch 202 is connected to the image signal line 171 via a branch wiring.

  Therefore, the image signals VID1 to VID6 are supplied from the six image signal lines 171 to the data lines 114 belonging to the data line group simultaneously and sequentially for each data line group through the sampling switch 202 which is turned on. The data lines 114 belonging to the data line group are driven simultaneously. Therefore, in this embodiment, since the n data lines 114 are driven for each data line group, the driving frequency can be reduced.

  In FIG. 4, when attention is paid to the configuration of one pixel portion 72, the data line 114 to which the image signal VIDk (k = 1, 2,..., 6) is supplied is electrically connected to the source electrode of the TFT 30. Connected. A scanning line 112 to which a scanning signal Yj (j = 1, 2, 3,..., M) is supplied is electrically connected to the gate electrode of the TFT 30. The pixel electrode 9 a is electrically connected to the drain electrode of the TFT 30. Here, in each pixel portion 72, the liquid crystal element 118 has a liquid crystal sandwiched between the pixel electrode 9 a and the counter electrode 21. Accordingly, the pixel units 72 are arranged in a matrix corresponding to the intersections of the scanning lines 112 and the data lines 114.

  Each scanning line 112 is selected line-sequentially by the scanning signals Y1,..., Ym output from the scanning line driving circuit 104. In the pixel portion 72 corresponding to the selected scanning line 112, when the scanning signal Yj is supplied to the TFT 30, the TFT 30 is turned on and the pixel portion 72 is in the selected state. An image signal VIDk is supplied from the data line 114 to the pixel electrode 9a at a predetermined timing by closing the switch of the TFT 30 for a certain period. As a result, an applied voltage defined by the potentials of the pixel electrode 9 a and the counter electrode 21 is applied to the liquid crystal element 118. The liquid crystal modulates the light by changing the orientation and order of the molecular assembly according to the applied voltage level, enabling gradation display. In the normally white mode, the voltage applied in units of each pixel. The transmittance for incident light is reduced according to the normal black mode, and the transmittance for incident light is increased according to the voltage applied in units of each pixel, and each pixel of the image display region 10a as a whole. Emits light having contrast according to the image signals VID1 to VID6.

  Here, the liquid crystal device 1 includes a holding capacitor 70 that holds a potential corresponding to the image signal in order to prevent the image signal from leaking. The storage capacitor 70 is added in parallel with the liquid crystal element 118. According to the holding capacitor 70, the voltage of the pixel electrode 9a is held for, for example, a time that is three orders of magnitude longer than the time during which the source voltage is applied. As a result, the holding characteristics are improved, so that a high contrast ratio is realized. The Rukoto.

  5, image signal lines 171-1,..., 171-6 supply image signals VID1 to VID6 to the corresponding i-th data line group via branch wirings E1, E2,. Similarly, the image signal lines 171-1,..., 171-6 are also connected to the (i−1) th data line group and the (i + 1) th data line group adjacent to the i th data line group. Supply VID6. Since the branch wirings E1, E2,... E6 are arranged on different layers from the image supply lines 171-1, ..., 171-6 via the interlayer insulating film, the branch wirings E1, E2,. ... E6 is electrically insulated from image signal lines other than the image signal lines to be electrically connected to these branch wirings. More specifically, for example, the branch wiring E1 that is electrically branched from the image supply line 171-1 via the contact hole intersects with the image signal lines 171-2, ..., 171-6. They are electrically insulated in a region intersecting with these image signal lines.

  The six branch lines E1 to E6 are arranged corresponding to the arrangement of the data lines 114e (114e-1 to 114e-6) belonging to the i-th data line group. The six image signal lines 171-1 to 171-6 are arranged along a direction that intersects the arrangement direction of the data lines 114e. One end of each of the six branch wirings E1, E2,... E6 is electrically connected to a corresponding one of the six image signal lines 171-1 to 171-6, respectively. The other ends of the six branch wirings E1 to E6 are electrically connected to the data line 114e via the sampling switch 202, respectively. The TFT 202 constituting each sampling switch has a source connected to the branch wiring Ek (k = 1, 2,..., 6) and a drain electrically connected to the data line 114e. The gate of each TFT 202 is electrically connected to the data line driving circuit 101 via control wirings X1 to X6. The i-th sampling signal Si is supplied from the data line driving circuit 101 to the control wirings X1 to X6 during the operation of the liquid crystal device 1, and the TFT 202 is switched from the off state to the on state.

<1-3: Specific Configuration of Pixel Unit>
Next, a specific configuration of the pixel portion of the liquid crystal device 1 will be described with reference to FIGS. 6 to 8 are plan views illustrating a partial configuration related to the pixel portion on the TFT array substrate 10. Each of FIGS. 6 and 7 corresponds to a lower layer portion (FIG. 6) and an upper layer portion (FIG. 7) in a laminated structure described later. FIG. 8 is an enlarged plan view of the laminated structure, and is a plan view in which FIGS. 6 and 7 are overlapped. 9 is a cross-sectional view taken along line IX-IX ′ in which FIGS. 6 and 7 are superimposed. In FIG. 9, in order to make each layer and each member recognizable on the drawing, the scale is different for each layer and each member.

  6 to 9, each circuit element of the pixel portion 72 described above includes, in order from the bottom, the first layer including the scanning line 112, the second layer including the TFT 30, etc., the third layer including the data line 114, and the like. The fourth layer includes a capacitor 70 and the like, and the fifth layer includes the pixel electrode 9a and the like. The base insulating film 12 is provided between the first layer and the second layer, the first interlayer insulating film 41 is provided between the second layer and the third layer, and the second interlayer insulating film 42 and the fourth layer are provided between the third layer and the fourth layer. A third interlayer insulating film 43 is provided between the fifth layers to prevent the above-described elements from being short-circuited. Of these, the first to third layers are shown in FIG. 6 as lower layer portions, and the fourth to fifth layers are shown in FIG. 7 as upper layer portions.

(Structure of the first layer-scanning lines, etc.)
The first layer is composed of scanning lines 112. The scanning line 112 is patterned into a shape including a main line portion extending along the X direction in FIG. 6 and a protruding portion extending in the Y direction in FIG. 6 where the data line 114 extends. The scanning line 112 is made of, for example, conductive polysilicon, and at least one of refractory metals such as titanium (Ti), chromium (Cr), tungsten (W), tantalum (Ta), and molybdenum (Mo). It is possible to form a single metal containing one metal, an alloy, metal silicide, polysilicide, or a laminate thereof. In the present embodiment, in particular, the scanning line 112 is a conductive film disposed on the lower layer side of the TFT 30 so as to include a region facing the channel region 1a. Therefore, the scanning line 112 penetrates through a composite optical system such as a prism emitted from another liquid crystal device when a double-plate type projector is constructed using back reflection on the TFT array substrate 10 or a liquid crystal device as a light valve. For return light such as incoming light, the channel region 1a can be shielded from the lower layer side.

(Second layer configuration-TFT, etc.)
The second layer is configured including the TFT 30. The TFT 30 has an LDD (Lightly Doped Drain) structure, for example, and includes a gate electrode 3a, a semiconductor layer 1a, and an insulating film 2 including a gate insulating film that insulates the gate electrode 3a from the semiconductor layer 1a. The gate electrode 3a is made of, for example, conductive polysilicon. The semiconductor layer 1a is made of, for example, polysilicon, and includes a channel region 1a ′, a low concentration source region 1b and a low concentration drain region 1c, and a high concentration source region 1d and a high concentration drain region 1e. The TFT 30 preferably has an LDD structure. However, the TFT 30 may have an offset structure in which no impurity is implanted into the low concentration source region 1b and the low concentration drain region 1c. It may be a self-aligned type in which a high concentration source region and a high concentration drain region are formed by implanting the film.

  The gate electrode 3 a of the TFT 30 is electrically connected to the scanning line 112 through a contact hole 12 cv formed in the base insulating film 12 in a part 3 b thereof. The base insulating film 12 is made of, for example, a silicon oxide film, and is formed on the entire surface of the TFT array substrate 10 in addition to the interlayer insulating function between the first layer and the second layer. Has a function of preventing changes in the element characteristics of the TFT 30 caused by the above. The TFT 30 according to the present embodiment is a top gate type, but may be a bottom gate type.

(3rd layer configuration-data lines, etc.)
The third layer includes the data line 114 and the relay layer 600.

  The data line 114 is a metal film having a single layer or multilayer structure including a metal film such as aluminum. The data line 114 may be formed as a three-layer film of aluminum, titanium nitride, and silicon nitride in order from the bottom. The data line 114 is formed so as to partially cover the channel region 1 a ′ of the TFT 30. For this reason, the channel region 1a ′ of the TFT 30 can be shielded from incident light from the upper layer side by the data line 114 that can be disposed close to the channel region 1a ′. The data line 114 is electrically connected to the high concentration source region 1 d of the TFT 30 through a contact hole 81 that penetrates the first interlayer insulating film 41.

  The relay layer 600 is formed as the same film as the data line 114. As shown in FIG. 6, the relay layer 600 and the data line 114 are formed so as to be separated from each other. The relay layer 600 is electrically connected to the high-concentration drain region 1 e of the TFT 30 through a contact hole 83 that penetrates the first interlayer insulating film 41.

  The first interlayer insulating film 41 is made of, for example, NSG (non-silicate glass). In addition, for the first interlayer insulating film 41, silicate glass such as PSG (phosphorus silicate glass), BSG (boron silicate glass), BPSG (boron phosphorus silicate glass), silicon nitride, silicon oxide, or the like can be used.

(Fourth layer configuration-holding capacity, etc.)
The fourth layer is configured to include the storage capacitor 70. The storage capacitor 70 has a configuration in which a capacitor electrode 300 and a lower electrode 71 are disposed to face each other with a dielectric film 75 interposed therebetween. The capacitor electrode 300 and the lower electrode 71 are an example of the “pair of electrodes” according to the present invention. The extending portion of the capacitor electrode 300 is electrically connected to the relay layer 600 through a contact hole 84 that penetrates the second interlayer insulating film 42.

  The capacitor electrode 300 and the lower electrode 71 are metal films having a single layer or a multilayer structure including at least one metal among metals such as Al, Ti, Cr, W, Ta, and Mo, for example. Further, the capacitor electrode 300 and the lower electrode 71 may be formed by stacking alloys, metal silicides, polysilicides, and nitrides. The storage capacitor 70 disposed on the data line 114 in the vicinity of the TFT 30 via the interlayer insulating film 42 can reliably shield the channel region 1a ′ of the TFT 30 against incident light from the upper layer side.

  In addition, as shown in FIG. 7, the capacitor electrode 300 is formed in a region smaller than the lower electrode 71 when viewed in plan on the TFT array substrate 10. That is, since the capacitor electrode 300 is not formed near the edge of the lower electrode 71 through the dielectric film 75, a short circuit may occur due to a manufacturing failure near the edge, or a defect may occur due to electric field concentration. The possibility can be reduced.

As shown in FIG. 7, the dielectric film 75 is formed in a non-opening region located in the gap of the opening region for each pixel when viewed in plan on the TFT array substrate 10. That is, the dielectric film 75 is hardly formed in the opening region. Therefore, even if the dielectric film 75 is an opaque film, it is not necessary to reduce the light transmittance in the opening region. Therefore, the dielectric film 75 is formed of a silicon nitride film or the like having a high dielectric constant without considering the transmittance. For this reason, the dielectric film 75 can also function as a film for preventing moisture and moisture, and can also improve water resistance and moisture resistance. In addition to the silicon nitride film, for example, a single layer film or a multilayer film such as hafnium oxide (HfO ₂ ), alumina (Al ₂ O ₃ ), tantalum oxide (Ta ₂ O ₅ ), or the like is used as the dielectric film. Also good.

(Fifth layer configuration-pixel electrode, etc.)
A third interlayer insulating film 43 is formed on the entire surface of the fourth layer, and a pixel electrode 9a is formed thereon as a fifth layer. The third interlayer insulating film 43 is made of, for example, NSG. In addition, the third interlayer insulating film 43 can be made of silicate glass such as PSG, BSG, or BPSG, silicon nitride, silicon oxide, or the like. The surface of the third interlayer insulating film 43 is subjected to a planarization process such as CMP similarly to the second interlayer insulating film 42.

  The pixel electrode 9a (the outline is indicated by a broken line 9a 'in FIG. 7) is arranged in each of the pixel areas partitioned and arranged in the vertical and horizontal directions, and the data lines 114 and the scanning lines 112 are arranged in a grid pattern at the boundaries. (See FIGS. 6 and 7). The pixel electrode 9a is made of a transparent conductive film such as ITO (Indium Tin Oxide).

  The pixel electrode 9a is electrically connected to the extending portion of the capacitor electrode 300 through a contact hole 85 that penetrates the interlayer insulating film 43 (see FIG. 9). Therefore, the potential of the capacitor electrode 300 which is the conductive film directly below the pixel electrode 9a is the pixel potential. Therefore, the pixel potential is not adversely affected by the parasitic capacitance between the pixel electrode 9a and the underlying conductive film during the operation of the liquid crystal device.

  Further, as described above, the extended portion of the capacitor electrode 300 and the relay layer 600 are electrically connected to the relay layer 600 and the high-concentration drain region 1e of the TFT 30 through the contact holes 84 and 83, respectively. . That is, the pixel electrode 9a and the high-concentration drain region 1e of the TFT 30 are relay-connected through the relay layer 600 and the extended portion of the capacitor electrode 300. Accordingly, it is possible to avoid a situation in which it is difficult to connect the pixel electrode and the drain with a single contact hole due to a long interlayer distance. In addition, the laminated structure and the manufacturing process are not complicated. An alignment film 16 that has been subjected to a predetermined alignment process such as a rubbing process is provided above the pixel electrode 9a. The above is the configuration of the pixel portion on the TFT array substrate 10 side.

  On the other hand, the counter substrate 20 is provided with a counter electrode 21 on the entire surface of the counter substrate, and further provided with an alignment film 22 thereon (under the counter electrode 21 in FIG. 9). As with the pixel electrode 9a, the counter electrode 21 is made of a transparent conductive film such as an ITO film. A light-shielding film 23 is provided between the counter substrate 20 and the counter electrode 21 so as to cover at least a region facing the TFT 30 in order to prevent generation of light leakage current in the TFT 30.

  A liquid crystal layer 50 is provided between the TFT array substrate 10 thus configured and the counter substrate 20. The liquid crystal layer 50 is formed by sealing liquid crystal in a space formed by sealing the peripheral portions of the substrates 10 and 20 with a sealing material. The liquid crystal layer 50 takes a predetermined alignment state by the alignment film 16 and the alignment film 22 that have been subjected to an alignment process such as a rubbing process in a state where an electric field is not applied between the pixel electrode 9 a and the counter electrode 21. It is like that.

  The configuration of the pixel portion described above is common to each pixel portion as shown in FIGS. Such pixel portions are periodically formed in the image display region 10a (see FIG. 1). On the other hand, in such a liquid crystal device 1, as described with reference to FIGS. 1 and 2, the scanning line driving circuit 104, the data line driving circuit 101, and the like are provided in the peripheral area located around the image display area 10 a. A drive circuit is formed.

  In the liquid crystal device 1 having such a pixel portion 72, the capacitor electrode 300, the lower electrode 71, and the data line 114 are an example of “a plurality of metal films” in the present invention. The capacitor electrode 300, the lower electrode 71, and the data line 114 are formed on different layers on the TFT array substrate 10.

  The light shielding film 54 shown in FIGS. 1 and 2 is formed as the same film in the same layer as the capacitor electrode 300 on the TFT array substrate 10. Therefore, according to the light shielding film 54, in the peripheral region extending around the image display region 10a, the wiring formed of the metal film formed as the same film in the same layer as each of the lower electrode 71 and the data line 114 or the metal It is possible to block light applied to various elements including a film. Therefore, the light shielding film 54 can reduce the projection of the pattern image of these wirings or various elements onto the projection screen.

  The light shielding film 54 may not be formed in the same layer as the capacitor electrode 300 formed in the uppermost layer among the plurality of metal films formed on the TFT array substrate 10, for example, in the image display region 10 a. In the peripheral region extending to the periphery, the same film may be formed in the same layer as the lower electrode 71 or the data line 114. Even if the light shielding film 54 is a film formed in the same layer as the metal film formed on the lower layer side of the metal film formed in the uppermost layer among the plurality of metal films, The effect of reducing the projection of the pattern image of the element or the like on the projection screen can be obtained accordingly.

  In addition, since the light shielding film 54 is electrically connected to the vertical conduction terminal 106 via a wiring (not shown), the light shielding film 54 is fixed via the external connection terminal 102 that is electrically connected to a power source that supplies a fixed potential. A potential is supplied. Therefore, when the light shielding film 54 is formed in the same layer as the lower electrode 71, the light shielding film 54 is shared as a wiring for supplying a fixed potential by electrically connecting the lower electrode 71 and the light shielding film 54. It is also possible to supply a fixed potential to the lower electrode 71.

<1-4: Specific Configuration of Sampling Circuit and Wiring in Peripheral Area>
Next, a specific configuration of the sampling circuit, wiring, and the like in the peripheral region on the TFT array substrate 10 will be described with reference to FIGS. FIG. 10 is a plan view showing the configuration of the sampling circuit and various wirings in the peripheral region. 11 is a cross-sectional view taken along the line XI-XI ′ of FIG.

  In FIG. 10, image signal lines 171-1, 171-2,..., 171-6 are connected to branch wirings E1, E2, via contact holes 91-1, 91-2,. ..., electrically connected to E6. One ends of the branch wirings E 1, E 2,..., E 6 are shared as the source electrode of the TFT 202. Therefore, the source electrodes of the branch lines E1, E2,..., E6 and the TFT 202 are formed in the same layer, and the source electrodes of the branch lines E1, E2,. It is. According to such branch wirings E1, E2,..., E6 and the source electrode, the number of steps in the manufacturing process of the liquid crystal device 1 can be reduced, and the manufacturing cost required for manufacturing the liquid crystal device 1 can be reduced. Note that one ends of the branch lines E1, E2,..., E6 shared as the source electrode of the TFT 202 are electrically connected to the source region of the semiconductor layer of the TFT 202 through the contact hole CNTS.

  The gate of the TFT 202 constituting the sampling circuit 200 and the data line driving circuit 101 are electrically connected via a control line 172, a contact hole 92, and control wirings X1, X2,. The control lines X 1, X 2,..., X 6 and the control line 172 are formed on different layers on the TFT array substrate 10 and are electrically connected to each other through the contact hole 92. Each of the control wirings X 1, X 2,..., X 6 branches from a portion of the control line 172 that extends along the image signal line 171 and is shared with the gate electrode of the TFT 202.

  One end of the data line 114 is shared as the drain electrode of the TFT 202 and is electrically connected to the drain region of the semiconductor layer included in the TFT 202 through the contact hole CNTD. Therefore, when the sampling signal Si is supplied to the gate of the TFT 202 via the control line 172, the TFT 202 is switched from the off state to the on state. In this state, the image signals VID1, VID2,..., VID6 supplied to the sources of the respective TFTs 202 are supplied to the data lines 114 via the branch wirings E1, E2,.

  The frame light shielding film 53 is formed so as to overlap the sampling circuit 200 in plan view. The light shielding film 54 is formed so as to overlap the branch lines E1, 2,..., E6 and the data line driving circuit 101 in a plan view. Therefore, the sampling circuit 200, the branch wirings E1, E2,..., E6 and the image signal lines 171-1, 171-2, ..., 171-6 are provided on the frame light shielding film 53 and the light shielding film 54, respectively. Since the light is shielded, it is possible to reduce the projection of the circuit portion and wiring pattern images on the projection screen during the operation of the liquid crystal device 1.

  The light shielding film 54 may be formed so as to overlap the sampling circuit 200 without providing the frame light shielding film 53. In other words, the frame area of the image display area 10 a can be defined by the light shielding film 54. If the light shielding film 54 overlaps at least one of the sampling circuit 200, the branch wirings E1, E2,..., E6 and the image signal lines 171-1, 171-2, 171-6, the light shielding film 54 is projected onto the projection screen. The resulting pattern image can be reduced accordingly.

  In FIG. 11, the branch wiring E <b> 1 is formed on the first interlayer insulating film 41. Similarly, branch wirings E2, E3,..., E6 are also formed on the first interlayer insulating film 41. Therefore, the branch lines E1, E2,..., E6 are formed in the same layer as the data line 114 which is a metal film. The branch lines E1, E2,..., E6 and the data line 114 are formed by forming a metal film containing the same kind of metal on the first interlayer insulating film 41 by a common process, By branching into a pattern, branch lines E1, E2,... E6 and data lines 114 are formed. Therefore, the branch lines E1, E2,... E6 and the data line 114 can be formed in a common process.

  The image signal line 171 is formed on the second interlayer insulating film 42. Therefore, the image signal line 171 is formed in the same layer as the lower electrode 71 which is a metal film. The image signal line 171 and the lower electrode 71 are formed by forming a metal film containing the same kind of metal on the second interlayer insulating film 42 by a common process and then patterning the metal film into a predetermined pattern. A line 171 and a lower electrode 71 are formed. Therefore, the image signal line 171 and the lower electrode 71 can be formed in a common process.

  The light shielding film 54 is formed on the dielectric film 75 that functions as an interlayer insulating film. Therefore, the light shielding film 54 is formed in the same layer as the capacitor electrode 300. The light shielding film 54 and the capacitor electrode 300 are formed by forming a metal film containing the same kind of metal on the dielectric film 75 by the same process and then patterning the metal film into a predetermined pattern. An electrode 300 is formed. Therefore, the light shielding film 54 and the capacitor electrode 300 can be formed in a common process.

  In addition, the image signal lines 171-1,..., 171-6 and the branch wirings E1,..., E6 are metal films containing a metal material such as aluminum. Therefore, the image signal lines 171-1,..., 171-6 and the branch wirings E1,..., E6 are relatively electric compared to the gate electrode 3a formed of a semiconductor such as conductive polysilicon. Low resistance film with low mechanical resistance.

  The electrical resistance of the branch wirings E1,..., E6, which are made of such a low resistance film, ignores the difference in electrical resistance between the branch wirings as compared to the case where the branch wiring is constituted by a semiconductor such as conductive polysilicon. As small as possible. Therefore, luminance unevenness generated in the image display area 10a in accordance with the difference in the wiring lengths of the branch lines E1, E2,..., E6 extending from the TFTs 202 to the image signal lines 171 (that is, differences in electrical resistance). Can be reduced.

  In addition, for the purpose of reducing the luminance unevenness generated in the image display area 10a, it is not necessary to provide a resistance portion in each branch wiring so that the electrical resistances of the branch wirings E1, E2,. It is possible to shorten the wiring length of the branch wirings E1, E2,. Therefore, according to the liquid crystal device 1, the area where the branch lines E1, E2,..., E6 are formed in the peripheral area can be reduced by reducing the wiring length of the branch lines E1, E2,. There is an advantage that the size of the liquid crystal device 1 can be reduced.

  The light shielding film 54 may be a metal film containing a metal such as aluminum formed in the same layer as the lower electrode 71. Such a light shielding film 54 may be electrically connected to the lower electrode 71 formed in the same layer as the light shielding film 54 and supplied with a fixed potential of the storage capacitor 70. According to the light shielding film 54 electrically connected to the lower electrode 71, by electrically connecting the light shielding film 54 to the external circuit connection terminal 102 electrically connected to a power source that supplies a fixed potential, A fixed potential can be supplied to the lower electrode 71 serving as a fixed potential side electrode.

  Of the pair of electrodes included in the storage capacitor 70, the fixed potential side electrode to which the fixed potential is supplied may be formed in an upper layer than the pixel potential side electrode to which the pixel electrode is supplied. By forming the fixed potential side electrode formed above the pixel potential electrode and the light shielding film 54 in the same layer, a fixed potential can be obtained without using connection means such as contact holes for electrically connecting different layers to each other. It is also possible to electrically connect the side electrode and the light shielding film 54.

  As described above, according to the electro-optical device according to this embodiment, the display quality of the electro-optical device can be improved, and the cost required for manufacturing the electro-optical device can be reduced. The electro-optical device can be reduced in size.

(Electronics)
Next, the case where the above-described liquid crystal device is applied to various electronic devices will be described.

  First, a projector using this liquid crystal device as a light valve will be described. FIG. 12 is a plan view showing a configuration example of the projector. As shown in FIG. 12, a projector 1100 includes a lamp unit 1102 made of a white light source such as a halogen lamp. The projection light emitted from the lamp unit 1102 is separated into three primary colors of RGB by four mirrors 1106 and two dichroic mirrors 1108 arranged in the light guide 1104, and serves as a light valve corresponding to each primary color. The light enters the liquid crystal panels 1110R, 1110B, and 1110G.

  The configurations of the liquid crystal panels 1110R, 1110B, and 1110G have the same configuration as that of the above-described liquid crystal device, and are driven by R, G, and B primary color signals supplied from the image signal processing circuit, respectively. The light modulated by these liquid crystal panels enters the dichroic prism 1112 from three directions. In this dichroic prism 1112, R and B light is refracted at 90 degrees, while G light travels straight. Accordingly, as a result of the synthesis of the images of the respective colors, a color image is projected onto the screen or the like via the projection lens 1114.

  Here, paying attention to the display images by the liquid crystal panels 1110R, 1110B, and 1110G, the display image by the liquid crystal panel 1110G needs to be horizontally reversed with respect to the display images by the liquid crystal panels 1110R, 1110B.

  Note that since light corresponding to the primary colors R, G, and B is incident on the liquid crystal panels 1110R, 1110B, and 1110G by the dichroic mirror 1108, it is not necessary to provide a color filter.

  According to such a projector 1100, it is possible to display a high-quality image because the pattern image of the data line driving circuit and the like formed on the liquid crystal panels 1110R, 1110B and 1110G is reduced. It is. In addition, since the liquid crystal panels 1110R, 1110B, and 1110G can be reduced in size, the overall size of the projector 1100 can be reduced.

1 is a plan view illustrating a configuration of an electro-optical device according to an embodiment. It is the II-II 'sectional view taken on the line of FIG. 1 is a block diagram showing an electro-optical device according to an embodiment together with its peripheral circuit unit. 1 is a block diagram illustrating an electrical configuration of an electro-optical device according to an embodiment. It is a block diagram showing an electrical connection configuration of an image signal line and a branch wiring, a sampling circuit, and a data line driving circuit. FIG. 6 is a plan view showing a lower layer portion of the laminated structure of the electro-optical device according to the embodiment. FIG. 6 is a plan view showing an upper layer portion of the laminated structure of the electro-optical device according to the embodiment. FIG. 8 is a plan view in which FIGS. 6 and 7 are superimposed. It is the IX-IX 'sectional view taken on the line in each of FIG.6 and FIG.7. FIG. 3 is a plan view illustrating a configuration of a sampling circuit and various wirings in a peripheral region of the electro-optical device according to the embodiment. It is the XI-XI 'sectional view taken on the line of FIG. It is sectional drawing showing the structure of the liquid crystal projector which concerns on one Embodiment of the electronic device which concerns on this invention.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 ... Liquid crystal device, 10 ... TFT array substrate, 20 ... Counter substrate, 72 ... Pixel part, 53 ... Frame light shielding film, 54 ... Light shielding film, 70 ... Holding capacity 71 ... Lower electrode, 112 ... Scanning line, 114 ... Data line, 171 ... Image signal line, E1, E2, ..., E6 ... Branch wiring, 300 ... Capacitance electrode

Claims (6)

A pair of substrates bonded together through a sealing material;
A data line provided in a pixel region on one of the pair of substrates;
An image signal line provided outside the pixel region;
A branch wiring electrically connected to the image signal line and arranged corresponding to the data line;
A sampling circuit including a sampling switch for supplying an image signal supplied from the image signal line via the branch wiring to the data line;
A data line driving circuit disposed inside the outer edge of the sealing material,
The image signal line and the branch wiring are arranged between the sampling circuit and the data line driving circuit,
On the one substrate, there is provided a first light-shielding film that overlaps at least a part of the image signal line or the branch wiring,
On the other substrate of the pair of substrates, there is a second light-shielding film that is spaced apart from the seal material inside the seal material and partially overlaps the first light-shield film and the sampling circuit. An electro-optical device characterized by being provided. A pixel electrode in the pixel region;
The branch wiring is formed in the same layer as the data line,
The image signal line and the first light-shielding film are formed in the same layer as a metal film formed between the data line and the pixel electrode;
The electro-optical device according to claim 1. A storage capacitor that is electrically connected to the pixel electrode and holds the image signal;
The first light-shielding film is formed in the same layer as the fixed potential side electrode of the pair of electrodes of the storage capacitor;
The electro-optical device according to claim 2. The data line driving circuit supplies a sampling signal to the sampling switch;
The electro-optical device according to any one of claims 1 to 3. The electro-optical device according to any one of claims 1 to 4,
Furthermore, an external connection terminal provided on the one substrate is provided,
The external connection terminal is provided outside the outer edge of the sealing material;
An electro-optical device. An electronic apparatus comprising the electro-optical device according to any one of claims 1 to 5.

Images