JP5123446B2 - 誘導結合ｒｆプラズマ源を静電遮蔽し、プラズマの点火を促進する装置および方法 - Google Patents

誘導結合ｒｆプラズマ源を静電遮蔽し、プラズマの点火を促進する装置および方法 Download PDF

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JP5123446B2
JP5123446B2 JP2000600289A JP2000600289A JP5123446B2 JP 5123446 B2 JP5123446 B2 JP 5123446B2 JP 2000600289 A JP2000600289 A JP 2000600289A JP 2000600289 A JP2000600289 A JP 2000600289A JP 5123446 B2 JP5123446 B2 JP 5123446B2
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faraday shield
gap
plasma
wall
vacuum chamber
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JP2002537648A (ja
JP2002537648A5 (https=
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シル、エドワード、エル
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
JP2000600289A 1999-02-19 2000-01-27 誘導結合ｒｆプラズマ源を静電遮蔽し、プラズマの点火を促進する装置および方法 Expired - Fee Related JP5123446B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/255,613 1999-02-19
US09/255,613 US6248251B1 (en) 1999-02-19 1999-02-19 Apparatus and method for electrostatically shielding an inductively coupled RF plasma source and facilitating ignition of a plasma
PCT/US2000/002032 WO2000049638A1 (en) 1999-02-19 2000-01-27 Apparatus and method for electrostatically shielding an inductively coupled rf plasma source and facilitating ignition of a plasma

Publications (3)

Publication Number Publication Date
JP2002537648A JP2002537648A (ja) 2002-11-05
JP2002537648A5 JP2002537648A5 (https=) 2011-10-06
JP5123446B2 true JP5123446B2 (ja) 2013-01-23

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JP2000600289A Expired - Fee Related JP5123446B2 (ja) 1999-02-19 2000-01-27 誘導結合ｒｆプラズマ源を静電遮蔽し、プラズマの点火を促進する装置および方法

Country Status (4)

Country Link
US (1) US6248251B1 (https=)
JP (1) JP5123446B2 (https=)
KR (1) KR100794423B1 (https=)
WO (1) WO2000049638A1 (https=)

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DK1102305T3 (da) * 1999-11-17 2003-08-04 European Community Plasmabehandlingsapparatur med en elektrisk ledende væg
US7047023B1 (en) * 2000-12-01 2006-05-16 Sirf Technology, Inc. GPS RF front end IC with frequency plan for improved integrability
US6664740B2 (en) * 2001-02-01 2003-12-16 The Regents Of The University Of California Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma
US6611106B2 (en) * 2001-03-19 2003-08-26 The Regents Of The University Of California Controlled fusion in a field reversed configuration and direct energy conversion
JP2007251223A (ja) * 2001-06-01 2007-09-27 Tokyo Electron Ltd プラズマ処理装置
US6946054B2 (en) 2002-02-22 2005-09-20 Tokyo Electron Limited Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing
DK1856702T3 (da) * 2005-03-07 2012-09-03 Univ California Plasma-elektrisk generationssystem
US9607719B2 (en) * 2005-03-07 2017-03-28 The Regents Of The University Of California Vacuum chamber for plasma electric generation system
US9123512B2 (en) * 2005-03-07 2015-09-01 The Regents Of The Unviersity Of California RF current drive for plasma electric generation system
US8031824B2 (en) 2005-03-07 2011-10-04 Regents Of The University Of California Inductive plasma source for plasma electric generation system
US7713430B2 (en) * 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
US7605008B2 (en) * 2007-04-02 2009-10-20 Applied Materials, Inc. Plasma ignition and complete faraday shielding of capacitive coupling for an inductively-coupled plasma
SI23611A (sl) 2011-01-20 2012-07-31 Institut@@quot@JoĹľef@Stefan@quot Metoda in naprava za vzbujanje visokofrekvenčne plinske plazme
EP2671430B1 (en) * 2011-02-03 2018-05-16 Tekna Plasma Systems Inc. High performance induction plasma torch
US9966236B2 (en) 2011-06-15 2018-05-08 Lam Research Corporation Powered grid for plasma chamber
SI2780913T1 (sl) 2011-11-14 2017-08-31 The Regents Of The University Of California Sistem za tvorjenje in ohranjanje visokozmogljivega FRC
HUE047991T2 (hu) 2013-09-24 2020-05-28 Tae Tech Inc Összeállítások nagyteljesítményû FRC létrehozására és fenntartására
LT3633683T (lt) 2014-10-13 2021-06-10 Tae Technologies, Inc. Kompaktinio torio susiliejimo ir suspaudimo būdas
DK3589083T3 (da) 2014-10-30 2022-10-31 Tae Tech Inc Systemer til dannelse og opretholdelse af højeffektiv FRC
JP6771774B2 (ja) 2015-05-12 2020-10-21 ティーエーイー テクノロジーズ， インコーポレイテッド 不所望の渦電流を低減するシステムおよび方法
EP3357067B1 (en) 2015-11-13 2021-09-29 TAE Technologies, Inc. Systems and methods for frc plasma position stability
IL266075B2 (en) 2016-10-28 2024-06-01 Tae Tech Inc Systems and methods for improved sustainment of a high performance frc elevated energies utilizing neutral beam injectors with tunable beam energies
WO2018085798A1 (en) 2016-11-04 2018-05-11 Tae Technologies, Inc. Systems and methods for improved sustainment of a high performance frc with multi-scaled capture type vacuum pumping
UA126673C2 (uk) 2016-11-15 2023-01-11 Тае Текнолоджіз, Інк. Системи і способи поліпшеної підтримки високоефективної конфігурації з оберненим полем і нагрівання електронів за допомогою вищих гармонік швидких хвиль у високоефективній конфігурації з оберненим полем
TWI887254B (zh) * 2019-07-17 2025-06-21 美商得昇科技股份有限公司 利用可調式電漿電位的可變模式電漿室
MX2022008660A (es) 2020-01-13 2022-08-10 Tae Tech Inc Sistema y metodos para formar y mantener plasma de configuracion de campo invertido (frc) de alta energia y temperatura por medio de fusion de spheromak e inyeccon de haz neutro.
CN114724907B (zh) * 2021-01-04 2025-02-14 江苏鲁汶仪器股份有限公司 一种等离子密度可调的离子源装置

Family Cites Families (10)

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Publication number Priority date Publication date Assignee Title
US5234529A (en) * 1991-10-10 1993-08-10 Johnson Wayne L Plasma generating apparatus employing capacitive shielding and process for using such apparatus
US5468296A (en) 1993-12-17 1995-11-21 Lsi Logic Corporation Apparatus for igniting low pressure inductively coupled plasma
US5540800A (en) * 1994-06-23 1996-07-30 Applied Materials, Inc. Inductively coupled high density plasma reactor for plasma assisted materials processing
JPH0850996A (ja) * 1994-08-05 1996-02-20 Aneruba Kk プラズマ処理装置
US5569363A (en) * 1994-10-25 1996-10-29 Sony Corporation Inductively coupled plasma sputter chamber with conductive material sputtering capabilities
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US6056848A (en) * 1996-09-11 2000-05-02 Ctp, Inc. Thin film electrostatic shield for inductive plasma processing
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
TW403959B (en) * 1996-11-27 2000-09-01 Hitachi Ltd Plasma treatment device
US5903106A (en) * 1997-11-17 1999-05-11 Wj Semiconductor Equipment Group, Inc. Plasma generating apparatus having an electrostatic shield

Also Published As

Publication number Publication date
KR20020011129A (ko) 2002-02-07
JP2002537648A (ja) 2002-11-05
KR100794423B1 (ko) 2008-01-16
WO2000049638A1 (en) 2000-08-24
US6248251B1 (en) 2001-06-19

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