KR100794423B1 - 유도 결합된 ｒｆ 플라즈마원의 정전 차폐 및 플라즈마의 점화 촉진 장치 및 방법 - Google Patents

유도 결합된 ｒｆ 플라즈마원의 정전 차폐 및 플라즈마의 점화 촉진 장치 및 방법 Download PDF

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KR100794423B1
KR100794423B1 KR1020017010541A KR20017010541A KR100794423B1 KR 100794423 B1 KR100794423 B1 KR 100794423B1 KR 1020017010541 A KR1020017010541 A KR 1020017010541A KR 20017010541 A KR20017010541 A KR 20017010541A KR 100794423 B1 KR100794423 B1 KR 100794423B1
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South Korea
Prior art keywords
shield
vacuum chamber
inductor
plasma
gap
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Korean (ko)
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KR20020011129A (ko
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실에드워드엘
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도쿄 엘렉트론 리미티드
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32651—Shields, e.g. dark space shields, Faraday shields
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Power Engineering (AREA)
  • Plasma Technology (AREA)
  • Drying Of Semiconductors (AREA)
KR1020017010541A 1999-02-19 2000-01-27 유도 결합된 ｒｆ 플라즈마원의 정전 차폐 및 플라즈마의 점화 촉진 장치 및 방법 Expired - Fee Related KR100794423B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/255,613 US6248251B1 (en) 1999-02-19 1999-02-19 Apparatus and method for electrostatically shielding an inductively coupled RF plasma source and facilitating ignition of a plasma
US09/255,613 1999-02-19

Publications (2)

Publication Number Publication Date
KR20020011129A KR20020011129A (ko) 2002-02-07
KR100794423B1 true KR100794423B1 (ko) 2008-01-16

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ID=22969126

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017010541A Expired - Fee Related KR100794423B1 (ko) 1999-02-19 2000-01-27 유도 결합된 ｒｆ 플라즈마원의 정전 차폐 및 플라즈마의 점화 촉진 장치 및 방법

Country Status (4)

Country Link
US (1) US6248251B1 (https=)
JP (1) JP5123446B2 (https=)
KR (1) KR100794423B1 (https=)
WO (1) WO2000049638A1 (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1102305B1 (en) * 1999-11-17 2003-05-07 European Community (EC) Plasma processing apparatus with an electrically conductive wall
US7047023B1 (en) * 2000-12-01 2006-05-16 Sirf Technology, Inc. GPS RF front end IC with frequency plan for improved integrability
US6664740B2 (en) 2001-02-01 2003-12-16 The Regents Of The University Of California Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma
US6611106B2 (en) * 2001-03-19 2003-08-26 The Regents Of The University Of California Controlled fusion in a field reversed configuration and direct energy conversion
JP2007251223A (ja) * 2001-06-01 2007-09-27 Tokyo Electron Ltd プラズマ処理装置
US6946054B2 (en) 2002-02-22 2005-09-20 Tokyo Electron Limited Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing
US8031824B2 (en) 2005-03-07 2011-10-04 Regents Of The University Of California Inductive plasma source for plasma electric generation system
US9607719B2 (en) * 2005-03-07 2017-03-28 The Regents Of The University Of California Vacuum chamber for plasma electric generation system
US9123512B2 (en) 2005-03-07 2015-09-01 The Regents Of The Unviersity Of California RF current drive for plasma electric generation system
EA013826B1 (ru) * 2005-03-07 2010-08-30 Дзе Риджентс Оф Дзе Юниверсити Оф Калифорния Система для выработки электроэнергии из плазмы
US7713430B2 (en) * 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
US7605008B2 (en) * 2007-04-02 2009-10-20 Applied Materials, Inc. Plasma ignition and complete faraday shielding of capacitive coupling for an inductively-coupled plasma
SI23611A (sl) 2011-01-20 2012-07-31 Institut@@quot@JoĹľef@Stefan@quot Metoda in naprava za vzbujanje visokofrekvenčne plinske plazme
US9380693B2 (en) 2011-02-03 2016-06-28 Tekna Plasma Systems Inc. High performance induction plasma torch
US9966236B2 (en) 2011-06-15 2018-05-08 Lam Research Corporation Powered grid for plasma chamber
SG10201704299XA (en) 2011-11-14 2017-06-29 Univ California Systems and methods for forming and maintaining a high performance frc
UA125164C2 (uk) 2013-09-24 2022-01-26 ТАЄ Текнолоджіс, Інк. Системи і способи формування і підтримання високоефективної конфігурації з оберненим полем
HUE047712T2 (hu) 2014-10-13 2020-05-28 Tae Tech Inc Összeállítás sûrû toroidok egyesítésére és összenyomására
HRP20221278T1 (hr) 2014-10-30 2022-12-23 Tae Technologies, Inc. Sustavi za formiranje i održavanje frc visokih performansi
KR102598740B1 (ko) 2015-05-12 2023-11-03 티에이이 테크놀로지스, 인크. 원하지 않는 맴돌이 전류를 감소시키는 시스템 및 방법
MY191665A (en) 2015-11-13 2022-07-06 Tae Tech Inc Systems and methods for frc plasma position stability
CA3041826A1 (en) 2016-10-28 2018-05-03 Tae Technologies, Inc. Systems and methods for improved sustainment of a high performance frc elevated energies utilizing neutral beam injectors with tunable beam energies
WO2018085798A1 (en) 2016-11-04 2018-05-11 Tae Technologies, Inc. Systems and methods for improved sustainment of a high performance frc with multi-scaled capture type vacuum pumping
EP3716286B1 (en) 2016-11-15 2025-07-09 TAE Technologies, Inc. Systems for improved sustainment of a high performance frc and high harmonic fast wave electron heating in a high performance frc
TWI887254B (zh) * 2019-07-17 2025-06-21 美商得昇科技股份有限公司 利用可調式電漿電位的可變模式電漿室
CN115380627A (zh) 2020-01-13 2022-11-22 阿尔法能源技术公司 用于经由球马克合并和中性束注入来形成和保持高能高温frc等离子体的系统和方法
CN114724907B (zh) * 2021-01-04 2025-02-14 江苏鲁汶仪器股份有限公司 一种等离子密度可调的离子源装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0850996A (ja) * 1994-08-05 1996-02-20 Aneruba Kk プラズマ処理装置
JPH10508985A (ja) * 1994-11-15 1998-09-02 マットソン テクノロジー インコーポレーテッド 誘導性プラズマリアクター

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234529A (en) * 1991-10-10 1993-08-10 Johnson Wayne L Plasma generating apparatus employing capacitive shielding and process for using such apparatus
US5468296A (en) 1993-12-17 1995-11-21 Lsi Logic Corporation Apparatus for igniting low pressure inductively coupled plasma
US5540800A (en) * 1994-06-23 1996-07-30 Applied Materials, Inc. Inductively coupled high density plasma reactor for plasma assisted materials processing
US5569363A (en) * 1994-10-25 1996-10-29 Sony Corporation Inductively coupled plasma sputter chamber with conductive material sputtering capabilities
US6056848A (en) * 1996-09-11 2000-05-02 Ctp, Inc. Thin film electrostatic shield for inductive plasma processing
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
TW403959B (en) * 1996-11-27 2000-09-01 Hitachi Ltd Plasma treatment device
US5903106A (en) * 1997-11-17 1999-05-11 Wj Semiconductor Equipment Group, Inc. Plasma generating apparatus having an electrostatic shield

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0850996A (ja) * 1994-08-05 1996-02-20 Aneruba Kk プラズマ処理装置
JPH10508985A (ja) * 1994-11-15 1998-09-02 マットソン テクノロジー インコーポレーテッド 誘導性プラズマリアクター

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
08050996
10508985

Also Published As

Publication number Publication date
JP2002537648A (ja) 2002-11-05
WO2000049638A1 (en) 2000-08-24
US6248251B1 (en) 2001-06-19
KR20020011129A (ko) 2002-02-07
JP5123446B2 (ja) 2013-01-23

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