JP2002537648A5 - - Google Patents

Download PDF

Info

Publication number
JP2002537648A5
JP2002537648A5 JP2000600289A JP2000600289A JP2002537648A5 JP 2002537648 A5 JP2002537648 A5 JP 2002537648A5 JP 2000600289 A JP2000600289 A JP 2000600289A JP 2000600289 A JP2000600289 A JP 2000600289A JP 2002537648 A5 JP2002537648 A5 JP 2002537648A5
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2000600289A
Other languages
Japanese (ja)
Other versions
JP5123446B2 (ja
JP2002537648A (ja
Filing date
Publication date
Priority claimed from US09/255,613 external-priority patent/US6248251B1/en
Application filed filed Critical
Publication of JP2002537648A publication Critical patent/JP2002537648A/ja
Publication of JP2002537648A5 publication Critical patent/JP2002537648A5/ja
Application granted granted Critical
Publication of JP5123446B2 publication Critical patent/JP5123446B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP2000600289A 1999-02-19 2000-01-27 誘導結合rfプラズマ源を静電遮蔽し、プラズマの点火を促進する装置および方法 Expired - Fee Related JP5123446B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/255,613 1999-02-19
US09/255,613 US6248251B1 (en) 1999-02-19 1999-02-19 Apparatus and method for electrostatically shielding an inductively coupled RF plasma source and facilitating ignition of a plasma
PCT/US2000/002032 WO2000049638A1 (en) 1999-02-19 2000-01-27 Apparatus and method for electrostatically shielding an inductively coupled rf plasma source and facilitating ignition of a plasma

Publications (3)

Publication Number Publication Date
JP2002537648A JP2002537648A (ja) 2002-11-05
JP2002537648A5 true JP2002537648A5 (https=) 2011-10-06
JP5123446B2 JP5123446B2 (ja) 2013-01-23

Family

ID=22969126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000600289A Expired - Fee Related JP5123446B2 (ja) 1999-02-19 2000-01-27 誘導結合rfプラズマ源を静電遮蔽し、プラズマの点火を促進する装置および方法

Country Status (4)

Country Link
US (1) US6248251B1 (https=)
JP (1) JP5123446B2 (https=)
KR (1) KR100794423B1 (https=)
WO (1) WO2000049638A1 (https=)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DK1102305T3 (da) * 1999-11-17 2003-08-04 European Community Plasmabehandlingsapparatur med en elektrisk ledende væg
US7047023B1 (en) * 2000-12-01 2006-05-16 Sirf Technology, Inc. GPS RF front end IC with frequency plan for improved integrability
US6664740B2 (en) * 2001-02-01 2003-12-16 The Regents Of The University Of California Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma
US6611106B2 (en) * 2001-03-19 2003-08-26 The Regents Of The University Of California Controlled fusion in a field reversed configuration and direct energy conversion
JP2007251223A (ja) * 2001-06-01 2007-09-27 Tokyo Electron Ltd プラズマ処理装置
US6946054B2 (en) 2002-02-22 2005-09-20 Tokyo Electron Limited Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing
DK1856702T3 (da) * 2005-03-07 2012-09-03 Univ California Plasma-elektrisk generationssystem
US9607719B2 (en) * 2005-03-07 2017-03-28 The Regents Of The University Of California Vacuum chamber for plasma electric generation system
US9123512B2 (en) * 2005-03-07 2015-09-01 The Regents Of The Unviersity Of California RF current drive for plasma electric generation system
US8031824B2 (en) 2005-03-07 2011-10-04 Regents Of The University Of California Inductive plasma source for plasma electric generation system
US7713430B2 (en) * 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
US7605008B2 (en) * 2007-04-02 2009-10-20 Applied Materials, Inc. Plasma ignition and complete faraday shielding of capacitive coupling for an inductively-coupled plasma
SI23611A (sl) 2011-01-20 2012-07-31 Institut@@quot@JoĹľef@Stefan@quot Metoda in naprava za vzbujanje visokofrekvenčne plinske plazme
EP2671430B1 (en) * 2011-02-03 2018-05-16 Tekna Plasma Systems Inc. High performance induction plasma torch
US9966236B2 (en) 2011-06-15 2018-05-08 Lam Research Corporation Powered grid for plasma chamber
SI2780913T1 (sl) 2011-11-14 2017-08-31 The Regents Of The University Of California Sistem za tvorjenje in ohranjanje visokozmogljivega FRC
HUE047991T2 (hu) 2013-09-24 2020-05-28 Tae Tech Inc Összeállítások nagyteljesítményû FRC létrehozására és fenntartására
LT3633683T (lt) 2014-10-13 2021-06-10 Tae Technologies, Inc. Kompaktinio torio susiliejimo ir suspaudimo būdas
DK3589083T3 (da) 2014-10-30 2022-10-31 Tae Tech Inc Systemer til dannelse og opretholdelse af højeffektiv FRC
JP6771774B2 (ja) 2015-05-12 2020-10-21 ティーエーイー テクノロジーズ, インコーポレイテッド 不所望の渦電流を低減するシステムおよび方法
EP3357067B1 (en) 2015-11-13 2021-09-29 TAE Technologies, Inc. Systems and methods for frc plasma position stability
IL266075B2 (en) 2016-10-28 2024-06-01 Tae Tech Inc Systems and methods for improved sustainment of a high performance frc elevated energies utilizing neutral beam injectors with tunable beam energies
WO2018085798A1 (en) 2016-11-04 2018-05-11 Tae Technologies, Inc. Systems and methods for improved sustainment of a high performance frc with multi-scaled capture type vacuum pumping
UA126673C2 (uk) 2016-11-15 2023-01-11 Тае Текнолоджіз, Інк. Системи і способи поліпшеної підтримки високоефективної конфігурації з оберненим полем і нагрівання електронів за допомогою вищих гармонік швидких хвиль у високоефективній конфігурації з оберненим полем
TWI887254B (zh) * 2019-07-17 2025-06-21 美商得昇科技股份有限公司 利用可調式電漿電位的可變模式電漿室
MX2022008660A (es) 2020-01-13 2022-08-10 Tae Tech Inc Sistema y metodos para formar y mantener plasma de configuracion de campo invertido (frc) de alta energia y temperatura por medio de fusion de spheromak e inyeccon de haz neutro.
CN114724907B (zh) * 2021-01-04 2025-02-14 江苏鲁汶仪器股份有限公司 一种等离子密度可调的离子源装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234529A (en) * 1991-10-10 1993-08-10 Johnson Wayne L Plasma generating apparatus employing capacitive shielding and process for using such apparatus
US5468296A (en) 1993-12-17 1995-11-21 Lsi Logic Corporation Apparatus for igniting low pressure inductively coupled plasma
US5540800A (en) * 1994-06-23 1996-07-30 Applied Materials, Inc. Inductively coupled high density plasma reactor for plasma assisted materials processing
JPH0850996A (ja) * 1994-08-05 1996-02-20 Aneruba Kk プラズマ処理装置
US5569363A (en) * 1994-10-25 1996-10-29 Sony Corporation Inductively coupled plasma sputter chamber with conductive material sputtering capabilities
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US6056848A (en) * 1996-09-11 2000-05-02 Ctp, Inc. Thin film electrostatic shield for inductive plasma processing
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
TW403959B (en) * 1996-11-27 2000-09-01 Hitachi Ltd Plasma treatment device
US5903106A (en) * 1997-11-17 1999-05-11 Wj Semiconductor Equipment Group, Inc. Plasma generating apparatus having an electrostatic shield

Similar Documents

Publication Publication Date Title
BE2014C035I2 (https=)
BE2010C009I2 (https=)
BE2010C019I2 (https=)
BRPI0112928B8 (https=)
BRPI0110940B8 (https=)
BE2014C025I2 (https=)
JP2002110980A5 (https=)
JP2004501013A5 (https=)
BY5768C1 (https=)
BRPI0003419A (https=)
BRPI0000763B8 (https=)
BR122012015772A2 (https=)
CN3135563S (https=)
CN3138983S (https=)
AU2001273056A2 (https=)
AU2000280388A8 (https=)
AU2000276986A8 (https=)
AU2000276891A8 (https=)
AU2000273097A8 (https=)
AU2000271150A8 (https=)
CN3133778S (https=)
CN3133951S (https=)
CN3134543S (https=)
CN3134893S (https=)
AU2000264849A8 (https=)