JP2002537648A5 - - Google Patents

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Publication number
JP2002537648A5
JP2002537648A5 JP2000600289A JP2000600289A JP2002537648A5 JP 2002537648 A5 JP2002537648 A5 JP 2002537648A5 JP 2000600289 A JP2000600289 A JP 2000600289A JP 2000600289 A JP2000600289 A JP 2000600289A JP 2002537648 A5 JP2002537648 A5 JP 2002537648A5
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2000600289A
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Japanese (ja)
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JP2002537648A (ja
JP5123446B2 (ja
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Publication date
Priority claimed from US09/255,613 external-priority patent/US6248251B1/en
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Publication of JP2002537648A publication Critical patent/JP2002537648A/ja
Publication of JP2002537648A5 publication Critical patent/JP2002537648A5/ja
Application granted granted Critical
Publication of JP5123446B2 publication Critical patent/JP5123446B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP2000600289A 1999-02-19 2000-01-27 誘導結合rfプラズマ源を静電遮蔽し、プラズマの点火を促進する装置および方法 Expired - Fee Related JP5123446B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/255,613 US6248251B1 (en) 1999-02-19 1999-02-19 Apparatus and method for electrostatically shielding an inductively coupled RF plasma source and facilitating ignition of a plasma
US09/255,613 1999-02-19
PCT/US2000/002032 WO2000049638A1 (en) 1999-02-19 2000-01-27 Apparatus and method for electrostatically shielding an inductively coupled rf plasma source and facilitating ignition of a plasma

Publications (3)

Publication Number Publication Date
JP2002537648A JP2002537648A (ja) 2002-11-05
JP2002537648A5 true JP2002537648A5 (https=) 2011-10-06
JP5123446B2 JP5123446B2 (ja) 2013-01-23

Family

ID=22969126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000600289A Expired - Fee Related JP5123446B2 (ja) 1999-02-19 2000-01-27 誘導結合rfプラズマ源を静電遮蔽し、プラズマの点火を促進する装置および方法

Country Status (4)

Country Link
US (1) US6248251B1 (https=)
JP (1) JP5123446B2 (https=)
KR (1) KR100794423B1 (https=)
WO (1) WO2000049638A1 (https=)

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EP1102305B1 (en) * 1999-11-17 2003-05-07 European Community (EC) Plasma processing apparatus with an electrically conductive wall
US7047023B1 (en) * 2000-12-01 2006-05-16 Sirf Technology, Inc. GPS RF front end IC with frequency plan for improved integrability
US6664740B2 (en) 2001-02-01 2003-12-16 The Regents Of The University Of California Formation of a field reversed configuration for magnetic and electrostatic confinement of plasma
US6611106B2 (en) * 2001-03-19 2003-08-26 The Regents Of The University Of California Controlled fusion in a field reversed configuration and direct energy conversion
JP2007251223A (ja) * 2001-06-01 2007-09-27 Tokyo Electron Ltd プラズマ処理装置
US6946054B2 (en) 2002-02-22 2005-09-20 Tokyo Electron Limited Modified transfer function deposition baffles and high density plasma ignition therewith in semiconductor processing
US8031824B2 (en) 2005-03-07 2011-10-04 Regents Of The University Of California Inductive plasma source for plasma electric generation system
US9607719B2 (en) * 2005-03-07 2017-03-28 The Regents Of The University Of California Vacuum chamber for plasma electric generation system
US9123512B2 (en) 2005-03-07 2015-09-01 The Regents Of The Unviersity Of California RF current drive for plasma electric generation system
EA013826B1 (ru) * 2005-03-07 2010-08-30 Дзе Риджентс Оф Дзе Юниверсити Оф Калифорния Система для выработки электроэнергии из плазмы
US7713430B2 (en) * 2006-02-23 2010-05-11 Micron Technology, Inc. Using positive DC offset of bias RF to neutralize charge build-up of etch features
US7605008B2 (en) * 2007-04-02 2009-10-20 Applied Materials, Inc. Plasma ignition and complete faraday shielding of capacitive coupling for an inductively-coupled plasma
SI23611A (sl) 2011-01-20 2012-07-31 Institut@@quot@JoĹľef@Stefan@quot Metoda in naprava za vzbujanje visokofrekvenčne plinske plazme
US9380693B2 (en) 2011-02-03 2016-06-28 Tekna Plasma Systems Inc. High performance induction plasma torch
US9966236B2 (en) 2011-06-15 2018-05-08 Lam Research Corporation Powered grid for plasma chamber
SG10201704299XA (en) 2011-11-14 2017-06-29 Univ California Systems and methods for forming and maintaining a high performance frc
UA125164C2 (uk) 2013-09-24 2022-01-26 ТАЄ Текнолоджіс, Інк. Системи і способи формування і підтримання високоефективної конфігурації з оберненим полем
HUE047712T2 (hu) 2014-10-13 2020-05-28 Tae Tech Inc Összeállítás sûrû toroidok egyesítésére és összenyomására
HRP20221278T1 (hr) 2014-10-30 2022-12-23 Tae Technologies, Inc. Sustavi za formiranje i održavanje frc visokih performansi
KR102598740B1 (ko) 2015-05-12 2023-11-03 티에이이 테크놀로지스, 인크. 원하지 않는 맴돌이 전류를 감소시키는 시스템 및 방법
MY191665A (en) 2015-11-13 2022-07-06 Tae Tech Inc Systems and methods for frc plasma position stability
CA3041826A1 (en) 2016-10-28 2018-05-03 Tae Technologies, Inc. Systems and methods for improved sustainment of a high performance frc elevated energies utilizing neutral beam injectors with tunable beam energies
WO2018085798A1 (en) 2016-11-04 2018-05-11 Tae Technologies, Inc. Systems and methods for improved sustainment of a high performance frc with multi-scaled capture type vacuum pumping
EP3716286B1 (en) 2016-11-15 2025-07-09 TAE Technologies, Inc. Systems for improved sustainment of a high performance frc and high harmonic fast wave electron heating in a high performance frc
TWI887254B (zh) * 2019-07-17 2025-06-21 美商得昇科技股份有限公司 利用可調式電漿電位的可變模式電漿室
CN115380627A (zh) 2020-01-13 2022-11-22 阿尔法能源技术公司 用于经由球马克合并和中性束注入来形成和保持高能高温frc等离子体的系统和方法
CN114724907B (zh) * 2021-01-04 2025-02-14 江苏鲁汶仪器股份有限公司 一种等离子密度可调的离子源装置

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5234529A (en) * 1991-10-10 1993-08-10 Johnson Wayne L Plasma generating apparatus employing capacitive shielding and process for using such apparatus
US5468296A (en) 1993-12-17 1995-11-21 Lsi Logic Corporation Apparatus for igniting low pressure inductively coupled plasma
US5540800A (en) * 1994-06-23 1996-07-30 Applied Materials, Inc. Inductively coupled high density plasma reactor for plasma assisted materials processing
JPH0850996A (ja) * 1994-08-05 1996-02-20 Aneruba Kk プラズマ処理装置
US5569363A (en) * 1994-10-25 1996-10-29 Sony Corporation Inductively coupled plasma sputter chamber with conductive material sputtering capabilities
US5811022A (en) * 1994-11-15 1998-09-22 Mattson Technology, Inc. Inductive plasma reactor
US6056848A (en) * 1996-09-11 2000-05-02 Ctp, Inc. Thin film electrostatic shield for inductive plasma processing
US6254737B1 (en) 1996-10-08 2001-07-03 Applied Materials, Inc. Active shield for generating a plasma for sputtering
TW403959B (en) * 1996-11-27 2000-09-01 Hitachi Ltd Plasma treatment device
US5903106A (en) * 1997-11-17 1999-05-11 Wj Semiconductor Equipment Group, Inc. Plasma generating apparatus having an electrostatic shield

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