JP5121183B2 - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法 Download PDF

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Publication number
JP5121183B2
JP5121183B2 JP2006223961A JP2006223961A JP5121183B2 JP 5121183 B2 JP5121183 B2 JP 5121183B2 JP 2006223961 A JP2006223961 A JP 2006223961A JP 2006223961 A JP2006223961 A JP 2006223961A JP 5121183 B2 JP5121183 B2 JP 5121183B2
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layer
electrode
insulating layer
organic compound
electrode layer
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JP2006223961A
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Japanese (ja)
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JP2007096276A5 (enExample
JP2007096276A (ja
Inventor
恒徳 鈴木
亮二 野村
幹央 湯川
信晴 大澤
圭恵 高野
良信 浅見
岳尚 佐藤
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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  • Electroluminescent Light Sources (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
JP2006223961A 2005-08-31 2006-08-21 半導体装置及びその作製方法 Expired - Fee Related JP5121183B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006223961A JP5121183B2 (ja) 2005-08-31 2006-08-21 半導体装置及びその作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005252881 2005-08-31
JP2005252881 2005-08-31
JP2006223961A JP5121183B2 (ja) 2005-08-31 2006-08-21 半導体装置及びその作製方法

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP2012093976A Division JP5272092B2 (ja) 2005-08-31 2012-04-17 半導体装置及び電子機器
JP2012166823A Division JP5622804B2 (ja) 2005-08-31 2012-07-27 半導体装置
JP2012166760A Division JP5190552B2 (ja) 2005-08-31 2012-07-27 半導体装置及び電子機器

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JP2007096276A JP2007096276A (ja) 2007-04-12
JP2007096276A5 JP2007096276A5 (enExample) 2009-09-17
JP5121183B2 true JP5121183B2 (ja) 2013-01-16

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Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1760776B1 (en) * 2005-08-31 2019-12-25 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method for semiconductor device with flexible substrate
WO2009107548A1 (en) * 2008-02-29 2009-09-03 Semiconductor Energy Laboratory Co., Ltd. Deposition method and manufacturing method of light-emitting device
JP2011003522A (ja) * 2008-10-16 2011-01-06 Semiconductor Energy Lab Co Ltd フレキシブル発光装置、電子機器及びフレキシブル発光装置の作製方法
US20100253902A1 (en) * 2009-04-07 2010-10-07 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device and manufacturing method thereof
KR101845480B1 (ko) * 2010-06-25 2018-04-04 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치의 제작 방법
JP5898949B2 (ja) * 2011-12-27 2016-04-06 パナソニック株式会社 フレキシブルデバイスの製造方法
TWI688102B (zh) * 2013-10-10 2020-03-11 日商半導體能源研究所股份有限公司 半導體裝置
CN108738377B (zh) 2015-07-30 2020-11-10 株式会社半导体能源研究所 发光装置的制造方法、发光装置、模块及电子设备
JP6715708B2 (ja) * 2016-07-08 2020-07-01 株式会社ジャパンディスプレイ 表示装置
KR20230145548A (ko) 2016-11-30 2023-10-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치 및 전자 기기
JPWO2019159614A1 (ja) * 2018-02-13 2021-01-28 パナソニックＩｐマネジメント株式会社 無線通信半導体装置およびその製造方法
US20200342282A1 (en) * 2018-02-13 2020-10-29 Panasonic Intellectual Property Management Co., Ltd. Semiconductor device and manufacturing method therefor
CN112349839B (zh) * 2020-10-26 2022-11-01 东北师范大学 一种与光刻电极相兼容的本征可拉伸有机场效应晶体管及其制备方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002026282A (ja) * 2000-06-30 2002-01-25 Seiko Epson Corp 単純マトリクス型メモリ素子の製造方法
JP2003109773A (ja) * 2001-07-27 2003-04-11 Semiconductor Energy Lab Co Ltd 発光装置、半導体装置およびそれらの作製方法
JP2003323132A (ja) * 2002-04-30 2003-11-14 Sony Corp 薄膜デバイスの製造方法および半導体装置
JP2004349539A (ja) * 2003-05-23 2004-12-09 Seiko Epson Corp 積層体の剥離方法、積層体の製造方法、電気光学装置及び電子機器
JP4731893B2 (ja) * 2003-12-02 2011-07-27 株式会社半導体エネルギー研究所 発光装置の作製方法
JP2005229098A (ja) * 2003-12-12 2005-08-25 Semiconductor Energy Lab Co Ltd 半導体装置及び半導体装置の作製方法

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