JP5121145B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

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Publication number
JP5121145B2
JP5121145B2 JP2006045792A JP2006045792A JP5121145B2 JP 5121145 B2 JP5121145 B2 JP 5121145B2 JP 2006045792 A JP2006045792 A JP 2006045792A JP 2006045792 A JP2006045792 A JP 2006045792A JP 5121145 B2 JP5121145 B2 JP 5121145B2
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Japan
Prior art keywords
film
gate electrode
conductive film
forming
etching
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JP2006045792A
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Japanese (ja)
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JP2006287205A (ja
JP2006287205A5 (enExample
Inventor
敦生 磯部
肇 徳永
真弓 山口
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2006045792A priority Critical patent/JP5121145B2/ja
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Publication of JP2006287205A5 publication Critical patent/JP2006287205A5/ja
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Publication of JP5121145B2 publication Critical patent/JP5121145B2/ja
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Expired - Fee Related legal-status Critical Current

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2006045792A 2005-03-07 2006-02-22 半導体装置の作製方法 Expired - Fee Related JP5121145B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006045792A JP5121145B2 (ja) 2005-03-07 2006-02-22 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005062929 2005-03-07
JP2005062929 2005-03-07
JP2006045792A JP5121145B2 (ja) 2005-03-07 2006-02-22 半導体装置の作製方法

Publications (3)

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JP2006287205A JP2006287205A (ja) 2006-10-19
JP2006287205A5 JP2006287205A5 (enExample) 2009-02-05
JP5121145B2 true JP5121145B2 (ja) 2013-01-16

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JP2006045792A Expired - Fee Related JP5121145B2 (ja) 2005-03-07 2006-02-22 半導体装置の作製方法

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Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8153511B2 (en) 2005-05-30 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4845592B2 (ja) * 2005-05-30 2011-12-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2008112909A (ja) * 2006-10-31 2008-05-15 Kochi Prefecture Sangyo Shinko Center 薄膜半導体装置及びその製造方法
JP2008124214A (ja) * 2006-11-10 2008-05-29 Kochi Prefecture Sangyo Shinko Center 薄膜半導体装置及びその製造方法
JP5352081B2 (ja) * 2006-12-20 2013-11-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5512931B2 (ja) * 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5222487B2 (ja) * 2007-04-17 2013-06-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5369501B2 (ja) * 2008-06-04 2013-12-18 セイコーエプソン株式会社 半導体装置の製造方法
CN103529645A (zh) * 2013-10-25 2014-01-22 无锡英普林纳米科技有限公司 一种纳米印章的制备方法
TWI665778B (zh) * 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 半導體裝置、模組及電子裝置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10135475A (ja) * 1996-10-31 1998-05-22 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TW513753B (en) * 2000-03-27 2002-12-11 Semiconductor Energy Lab Semiconductor display device and manufacturing method thereof
TW544941B (en) * 2002-07-08 2003-08-01 Toppoly Optoelectronics Corp Manufacturing process and structure of thin film transistor
JP4230307B2 (ja) * 2003-08-04 2009-02-25 株式会社半導体エネルギー研究所 半導体装置及びその作製方法

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JP2006287205A (ja) 2006-10-19

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