JP5121145B2 - 半導体装置の作製方法 - Google Patents

半導体装置の作製方法 Download PDF

Info

Publication number
JP5121145B2
JP5121145B2 JP2006045792A JP2006045792A JP5121145B2 JP 5121145 B2 JP5121145 B2 JP 5121145B2 JP 2006045792 A JP2006045792 A JP 2006045792A JP 2006045792 A JP2006045792 A JP 2006045792A JP 5121145 B2 JP5121145 B2 JP 5121145B2
Authority
JP
Japan
Prior art keywords
film
gate electrode
conductive film
forming
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006045792A
Other languages
English (en)
Japanese (ja)
Other versions
JP2006287205A5 (enExample
JP2006287205A (ja
Inventor
敦生 磯部
肇 徳永
真弓 山口
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP2006045792A priority Critical patent/JP5121145B2/ja
Publication of JP2006287205A publication Critical patent/JP2006287205A/ja
Publication of JP2006287205A5 publication Critical patent/JP2006287205A5/ja
Application granted granted Critical
Publication of JP5121145B2 publication Critical patent/JP5121145B2/ja
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Thin Film Transistor (AREA)
JP2006045792A 2005-03-07 2006-02-22 半導体装置の作製方法 Expired - Fee Related JP5121145B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2006045792A JP5121145B2 (ja) 2005-03-07 2006-02-22 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2005062929 2005-03-07
JP2005062929 2005-03-07
JP2006045792A JP5121145B2 (ja) 2005-03-07 2006-02-22 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2006287205A JP2006287205A (ja) 2006-10-19
JP2006287205A5 JP2006287205A5 (enExample) 2009-02-05
JP5121145B2 true JP5121145B2 (ja) 2013-01-16

Family

ID=37408711

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2006045792A Expired - Fee Related JP5121145B2 (ja) 2005-03-07 2006-02-22 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP5121145B2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8153511B2 (en) 2005-05-30 2012-04-10 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP4845592B2 (ja) * 2005-05-30 2011-12-28 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2008112909A (ja) * 2006-10-31 2008-05-15 Kochi Prefecture Sangyo Shinko Center 薄膜半導体装置及びその製造方法
JP2008124214A (ja) * 2006-11-10 2008-05-29 Kochi Prefecture Sangyo Shinko Center 薄膜半導体装置及びその製造方法
JP5352081B2 (ja) * 2006-12-20 2013-11-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5512931B2 (ja) * 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5222487B2 (ja) * 2007-04-17 2013-06-26 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5369501B2 (ja) * 2008-06-04 2013-12-18 セイコーエプソン株式会社 半導体装置の製造方法
CN103529645A (zh) * 2013-10-25 2014-01-22 无锡英普林纳米科技有限公司 一种纳米印章的制备方法
TWI665778B (zh) * 2014-02-05 2019-07-11 日商半導體能源研究所股份有限公司 半導體裝置、模組及電子裝置

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10135475A (ja) * 1996-10-31 1998-05-22 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
TW513753B (en) * 2000-03-27 2002-12-11 Semiconductor Energy Lab Semiconductor display device and manufacturing method thereof
TW544941B (en) * 2002-07-08 2003-08-01 Toppoly Optoelectronics Corp Manufacturing process and structure of thin film transistor
JP4230307B2 (ja) * 2003-08-04 2009-02-25 株式会社半導体エネルギー研究所 半導体装置及びその作製方法

Also Published As

Publication number Publication date
JP2006287205A (ja) 2006-10-19

Similar Documents

Publication Publication Date Title
US7482248B2 (en) Manufacturing method of semiconductor device
JP5072157B2 (ja) 半導体装置の作製方法
US8373166B2 (en) Light-emitting device
US6720577B2 (en) Semiconductor device and method of manufacturing the same
US7622338B2 (en) Method for manufacturing semiconductor device
US7410839B2 (en) Thin film transistor and manufacturing method thereof
US7364954B2 (en) Method for manufacturing semiconductor device
JP2009151333A (ja) アクティブマトリクス型表示装置
JP5121145B2 (ja) 半導体装置の作製方法
KR101238753B1 (ko) 반도체 장치 및 이를 제조하는 방법
JP5264017B2 (ja) 半導体装置の作製方法
JP4651777B2 (ja) 半導体装置の作製方法
US7319236B2 (en) Semiconductor device and electronic device
JP2006310445A (ja) 半導体装置の作製方法
JP4719054B2 (ja) 薄膜トランジスタの作製方法
JP4850328B2 (ja) 半導体装置の作製方法
JP3993630B2 (ja) 半導体装置の作製方法
JP4754918B2 (ja) 半導体装置の作製方法
JP2003233333A (ja) パッシブマトリクス型表示装置
JP5255756B2 (ja) 半導体装置の作製方法
JP5094099B2 (ja) 半導体装置の作製方法
JP5238125B2 (ja) 半導体装置の作製方法
JP3934537B2 (ja) 半導体装置
JP3934538B2 (ja) 半導体装置の作製方法
JP4713200B2 (ja) 半導体装置及びその作製方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20081212

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20081212

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20120330

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20120501

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20120621

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20121016

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20121023

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20151102

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees