JP5118309B2 - Manufacturing method of film with transparent electrode and touch panel using film with transparent electrode - Google Patents

Description

  The present invention relates to a method for producing a film with a transparent electrode and a touch panel using the same, and more particularly to improvement of laser patterning technology for a transparent conductive film.

As an input means such as a touch panel, a film with a transparent electrode formed by arranging a transparent conductive film such as ITO on the surface of a transparent resin film is used.
As a method for patterning the film with a transparent electrode, a method is employed in which a transparent conductive film is uniformly formed on the surface of the transparent resin film, and then the transparent conductive film is etched into a predetermined pattern.

  As shown in Patent Documents 1 and 2, a wet etching method or a dry sputtering method can be used for etching, but from the viewpoint of processing precision limit, handling of etching solution, drainage treatment and environmental problems, etc. As shown in Patent Documents 3 and 4, the dry laser patterning method has become widespread. According to the laser patterning method, there is an advantage that fine processing can be performed by ablation (explosive particle emission phenomenon from a solid) without using a solution.

Here, the transparent conductive film and the film have high visible light transmittance due to their original characteristics, and the laser energy absorption rate is lower than that of the non-transparent material. For this reason, although the transparent conductive film can be processed by increasing the laser intensity, the film is easily affected by heat simultaneously with the transparent conductive film, and the film may be damaged.
Therefore, in recent years, as shown in Patent Document 6, a laser patterning technique using a UV laser having a wavelength of around 355 nm as a third harmonic has been developed. According to this technology, the UV laser with a wavelength of 355 nm has a low absorption rate in the resin film and a high absorption rate in the conductive film, so only the conductive film is selectively laser processed without increasing the laser power. it can. Further, since the light condensing property is good at a short wavelength, fine patterning is possible.
Japanese Patent Laid-Open No. 4-147526 JP-A-4-84525 JP-A-6-214705 Japanese Patent Laid-Open No. 2-259727 Japanese Patent Laid-Open No. 2001-202826 JP 2003-37314 A

However, the laser patterning method in Patent Document 6 has a problem that the transparent conductive film partially rises in a region near the processing width of the ablated transparent conductive film (so-called heat-affected width). It is considered that this bulge is caused by the transparent conductive film melted by the laser heating rising under the influence of the jet of the ablated transparent conductive film.
When such a bulge exists, the refractive index of the transmitted light is different between the portion where the bulge portion exists and the other portion when viewed from the direction perpendicular to the film, which may impair visibility.

Further, when a ridge is present, if it is laminated with another film material, the optical characteristics are partially changed at the ridge, which may cause a deterioration in image display performance.
Furthermore, when the molten transparent conductive film is burned out, the boundary between the processed part and the ablation part is not clear, and the film part in the vicinity of the boundary becomes discolored in black without being linear or jagged. There is also. In this case, the visibility is deteriorated.

Such a problem needs to be solved particularly in a capacitive touch panel in which a plurality of striped electrodes are arranged in a matrix, for example.
In addition, along with the trend toward higher definition of displays such as LCDs in the market, it is required to improve the precision and definition of touch panels. Here, in consideration of ensuring the visibility of the touch panel in a high-definition display, it is considered that it is necessary to form stripe electrodes with a processing width of 10 μm or less for laser patterning. However, when the transparent electrode is formed by performing such ultra-fine processing with a laser, the optical characteristics of the touch panel are distorted due to the rise of the transparent conductive film in the heat-affected width generated in the conventional method, resulting in the visibility and sensing performance. Deterioration is expected to become a more prominent problem.

As described above, there are still problems to be solved in performing fine laser patterning.
The present invention has been made in view of the above problems, and as a first object, even when performing microfabrication with a processing width of 10 μm or less, precise thermal laser patterning of a conductive film is performed by suppressing the heat affected width. Provided is a method for producing a transparent electrode-equipped film.

  Moreover, the touch panel which can exhibit favorable visibility is provided as a 2nd objective by using the said film with a transparent conductive film.

  In order to solve the above-described problems, the present invention includes a laser patterning step of forming a transparent electrode by patterning a transparent conductive film formed on a transparent film surface with a processing width of 10 μm or less by scanning a UV laser. In the laser patterning step, the focus beam radius is adjusted to a condition range larger than the processing width radius, and the transparent conductive film portion corresponding to the processing width is ablated in the laser patterning process. The laser intensity was adjusted.

  The present invention also provides a film with a transparent electrode comprising a laser patterning step for forming a transparent electrode by patterning with a processing width of 10 μm or less by scanning a UV laser on a transparent conductive film formed on the surface of the transparent film. In the laser patterning step, the beam width corresponding to an intensity level 0.6 times the peak intensity h in the Gaussian distribution of laser intensity is w1, and the beam width corresponding to an intensity level 0.25 times the peak intensity h is w2. In this case, the processing width is adjusted in a range of w1 or more and w2 or less, and the transparent conductive film portion corresponding to the processing width is ablated.

Here, in the laser patterning step, the size ratio between the focal beam radius and the processing width radius can be adjusted by adjusting the focal length.
In the above laser patterning step, the ratio w / w _o of the processing width radius w and the focal beam radius w _o can be adjusted to be 0.8 or less.
In the laser patterning step, a UV laser having a wavelength of 320 nm or more and 450 nm or less can be used as the UV laser.

Further, in the laser patterning step, the third harmonic of a YAG laser can be used as the UV laser.
In the laser patterning step, the laser focal length f ₁₂ of the processing lens optical system in the laser irradiation apparatus and the ratio f ₁₂ / W of the lens incident beam radius W are 34% or more and 89% or less, Patterning conditions can also be adjusted.

In the laser patterning step, when a transparent electrode film using a PET film as the transparent film and an ITO film as the transparent conductive film is to be processed, the ratio between the processing width radius w and the focal beam radius w _o is determined. The range of 1.2 to 1.7 can be set, the processing width can be adjusted to 5 μm or more and 10 μm or less, and the laser energy per pulse applied to the ITO film can be set to the range of 0.2 μJ / pulse or more and 1.0 μJ / pulse or less. it can.

Furthermore, this invention was set as the film with a transparent electrode for touchscreens manufactured by the manufacturing method of the film with a transparent electrode of the said invention.
Further, the present invention is a capacitive touch panel using a transparent electrode-attached film in which a patterned transparent electrode is provided on both main surfaces of the transparent film, wherein the transparent electrode-attached film is the invention. It was set as the structure comprised by the film with a transparent electrode.

  Furthermore, this invention can also be set as the electrostatic capacitance type touch panel which uses one pair of transparent electrode with which the transparent electrode patterned on one main surface of the transparent film is used together, and this is opposingly arranged.

  According to the laser patterning step of the present invention having the above configuration, first, by using a UV laser (for example, a third harmonic YAG laser having an ultraviolet wavelength of 355 nm), only the transparent conductive film on the transparent film is used. Laser energy can be absorbed selectively. For this reason, for example, when processing an ITO film formed on a PET film, only ITO can be selectively ablated without damaging the PET film.

The Second, to reduce the working width radius w with respect to the focal beam radius w _o, by patterning weakening the laser intensity (peak value in the Gaussian distribution), the laser intensity in the outer working width is sufficiently low. For this reason, the heat affected width formed at the outer edge of the processing width is reduced. As a result, a so-called “swell” portion is unlikely to occur near the edge facing the ITO processing width. In addition to this, the continuity and linearity of the boundary line between the transparent conductive film portion to be ablated and the other film portions are maintained well, and no discoloration due to burning occurs.

Therefore, when the transparent electrode-coated film that has been subjected to laser patterning in the present invention is used as a planar member of a touch panel, distortion is hardly generated in a laminated structure with other constituent films, and good visibility is ensured. It becomes.
When using a film with a transparent electrode that has been laser-processed by such a method, as shown in Fig. 13 (c), the region X1 where the transparent conductive film (ITO film here) does not exist on both sides, the ITO film Although there will be a region X2 that exists only on either the front or back side, and an intersecting region X3 of the matrix-like transparent electrode group 12b, 22b, the electrode width and electrode gap are 10 μm below the normal human visibility limit It is formed with the following width, and even when viewed from such a watermark position, there is no actual distortion of visibility on the film. As a result, an image on a high-definition LCD or the like is displayed without being damaged, and good image display performance can be exhibited. In addition, since the thermal influence width is kept small, the optical distortion of the touch panel is suppressed, and the image display performance and visibility are not impaired when combined with a display such as an LCD.

The “focus beam radius” as used in the present application is the radius of a circle having a 1 / e ² intensity of the peak value of the Gaussian distribution in the focused focused beam, and refers to the radius of the substantial laser spot at the focus. . Therefore, for example, even if blurring occurs near the outer edge of the laser spot due to the aberration of the condenser lens, the radius of the laser spot including the blurred region is not used as the focal beam radius, but rather refers to a radius defined by a Gaussian distribution. And

In addition, “laser intensity” in the present application refers to an intensity comprehensively determined by laser power, laser energy, laser energy density, etc. Also, “UV laser” refers to a laser having a wavelength of 320 nm to 450 nm in the present invention. Shall be pointed to.

Hereinafter, the laser patterning method of the film with a transparent electrode of this invention and the structural example of the touchscreen using the film with a transparent electrode created by the said method are demonstrated one by one.
<Embodiment 1>
(Configuration of patterning device)
FIG. 1 is a diagram showing a schematic configuration of a laser processing apparatus (laser trimming apparatus) 1 used for producing a film with a transparent electrode of the present invention. FIG. 2 is a functional block diagram of the apparatus.

First, as shown in FIG. 1, the apparatus 1 is a combination of an xy table 10 and a laser irradiation system 2.
On the rectangular pedestal 11, a bridge portion 12 in which inverted U-shaped angle members are combined is disposed so as to straddle the xy table from above. The bridge portion 12 is provided with a machining head 100 by means such as screws.

  The xy table is a feeding means for a workpiece WP (film with a transparent conductive film) placed thereon, and includes a y-axis table 13 and an x-axis table 14 that are sequentially stacked on a pedestal 11. The tables 13 and 14 are each controlled by a digital control by the control device 3 using a personal computer, and ball screws 131 and 141 (141 not shown) and individual servo motors (not shown) attached to the ball screws 131 and 141, respectively. ) And can be reciprocated precisely and independently in the y-axis or x-axis directions. As a result, the x-axis table 14 is movable along the two-dimensional plane relative to the bridge portion 12.

As an example of size, the dimensions of the x table can be 430 mm x 330 mm, maximum workpiece speed 500 mm / sec, and positioning accuracy ± 0.005 mm.
The laser irradiation system 2 includes a laser beam irradiation device 20, a beam transmission system 201, a processing head 100, and the like.
As shown in the functional block diagram of FIG. 2, the laser beam irradiation apparatus 20 includes a YAG laser oscillator 210, a third harmonic (THG) generator 211, an attenuator (attenuator) 212, and a beam expander inside a box-shaped casing. (EXP) 213 is built in, and the drive is controlled by the control device 3.

The YAG laser oscillator 210 is basically based on an output from an Nd: YAG pulse laser. Furthermore, by combining with the third harmonic generator 211, it is possible to obtain a specification example with an average output of 1 W to 6 W and a pulse repetition frequency of 15 to 300 kHz.
The third harmonic generator 211 adjusts the order of frequency to 3 for a laser having a power density of 1010 W / cm ² or more. In the first embodiment, a predetermined power density is secured using third harmonics.

The attenuator 212 serves as a means for attenuating the laser output. In the present invention, since the output of the YAG laser oscillator is attenuated to a considerable extent and used for fine laser patterning, the attenuator 212 is used for fine adjustment purposes. However, for example, when the output can be adjusted on the YAG laser oscillator side, the attenuator 212 is not necessary.
The beam expander (EXP) 213 serves to reduce the beam divergence angle and expand the beam diameter in accordance with the apertures of optical lenses A and B described later.

The beam transmission system 201 is a long body whose exterior is covered with a shielding member, and serves to guide the laser output from the laser beam irradiation apparatus 20 to the processing head 100.
The beam transmission system 201 is a combination of an optical lens, a mirror, and the like.
On the downstream side of the processing head 100, an optical system (not shown) is built in a prismatic housing for attaching to the bridge portion 12.

Inside the processing head 100, two optical lenses A and B (not shown) are housed at a predetermined interval d as a two-group zoom lens. Then, by adjusting the lens A, a gap d of the B, can be the principle of the so-called zoom lens (see below formula 1), along the z-z 'direction, to adjust the focal length f ₁₂ of the laser .
In the laser irradiation system 2 having the above configuration, the laser generated by the YAG laser oscillator 210 is introduced into the beam expander 213 through the third harmonic generator 211 and the attenuator 212 as shown in FIG. After that, the surface to be processed on the workpiece WP is irradiated through the optical lenses A and B. At this time, the x-axis table 14 is moved two-dimensionally along the xy-axis direction (the x-x ′ direction and the y-y ′ direction in FIG. 1), so that the laser is directed to the processing target surface on the workpiece WP. Irradiation can be performed while scanning, and linear ablation can be performed (see Fig. 6 (b)). Here, in the first embodiment, the transparent conductive film on the workpiece WP placed on the x-axis table 14 can be ablated with a fine processing width of 10 μm or less.

Note that the zoom lens is not limited to two groups, and may be configured, for example, as four groups.
(About film with transparent conductive film)
The following can be assumed as the film with a transparent conductive film placed on the workpiece WP.
First, as the film material, various transparent plastic films, λ / 4 polarizing plates, glass substrates, and quartz substrates can be used, but in the present invention, a material that does not have a high absorptance at about 355 nm is used. Use. This is for selectively ablating only the transparent conductive film described later at the time of laser irradiation. The thickness of the film is usually 20 to 500 μm. When a glass substrate is used, a thickness of 100 μm or more (typically 200 μm to 500 μm is preferable) may be used.

  Specific plastic materials include polyethylene terephthalate (PET), polyimide (PI), polyethylene naphthalate (PEN), polyethersulfone (PES), polyetheretherketone (PEEK), polycarbonate (PC), polypropylene (PP ), Polyamide (PA), polyacrylic (PAC), acrylic, amorphous polyolefin resin, cyclic polyolefin resin, aliphatic cyclic polyolefin, norbornene thermoplastic transparent resin, or a laminate thereof. .

As the glass type, a glass substrate such as soda glass, alkali-free glass, borosilicate glass, or quartz glass is suitable.
Second, a general material can be used for the transparent conductive film, but in the present invention, a material having a high absorption rate in the vicinity of about 355 nm is used.
For example, ITO (Indium Tin Oxide), antimony-added lead oxide, fluorine-added tin oxide, aluminum-added zinc oxide, potassium-added zinc oxide, silicon-added zinc oxide, potassium-added zinc oxide, zinc oxide-tin oxide system, A transparent conductive material such as an indium oxide-tin oxide system, a tin oxide film, copper, aluminum, nickel, chromium, or the like can be considered. Moreover, these alloys may be sufficient and a different forming material may overlap and be formed. Only one of these may be used.

Film formation of transparent conductive film on film depends on PVD method such as sputtering method, vacuum deposition method, ion plating method, CVD method, coating, etc. Any method such as a printing method or a printing method is appropriately selected.
(Method for producing film with transparent electrode)
Hereinafter, the manufacturing method of the film with a transparent electrode by the said laser patterning process is demonstrated.

In the first embodiment, the laser patterning processing step operation is basically performed by the following processing width adjustment step and laser intensity adjustment step.
Needless to say, it is necessary to separately set conditions such as the material of the transparent conductive film, the thickness, the ambient temperature, the work speed by the xy table, and the laser pulse repetition frequency during processing. In the present invention, it is preferable to set these conditions roughly in advance, and then perform a processing width adjustment step and a laser intensity adjustment step described later.

(Processing width adjustment step)
The focal length is adjusted so that the processing width becomes a predetermined value of 10 μm or less in a condition range in which the focal beam radius w _o on the processing target surface on the workpiece WP is larger than the processing width radius w.
Here, if the third harmonic of a YAG laser having a wavelength of 355 nm is used, it is suitable for fine processing because the light condensing property is better than that of a laser having a longer wavelength. In addition, when using a film with a transparent conductive film formed by forming an ITO film on a PET film as the workpiece WP, only the ITO film is selectively used by utilizing the difference in the absorption rate between the ITO and the PET film. Has the advantage that it can be processed efficiently.

Next, the focal beam radius w _{o at} the focal position using the processing head 100 can be adjusted by changing the lens gap d. That is, while always maintaining such laser focus is positioned on the processed surface, by changing the lens interstitial d to adjust the focal length f _12.
Here, when the focal lengths of the lenses A and B in the processing head 100 are f ₁ and f ₂ , the focal length f ₁₂ of the combined lens by the lenses A and B is adjusted based on the known relational expression 1. (For example, “How to use optical components and points to note” by Tetsuo Sueda, Optronics, Figure 2.43).

<Relational expression 1> f ₁₂ = f ₁ f ₂ / (f ₁ + f ₂ -d)
As shown in those formulas 1, the focal length f ₁₂ When the lens A, a longer distance d B becomes longer.
On the other hand, the focal beam radius w _o can be adjusted based on the relational expression 2 between the focal length f ₁₂ and the beam divergence angle θ.
<Relational expression 2> Focal beam radius w _o = f ₁₂ θ (However, there is a relation of relational expression 4 described later for θ)
Here, FIG. 3 is a graph showing the relationship between the laser intensity distribution and the beam diameter. As shown in FIG. 3 (a), the laser intensity on the surface to be processed on the workpiece WP has a Gaussian distribution. In general, the focal beam radius _wo has the Gaussian distribution as shown in FIG. 3 (b). It is defined as the focal radius when an incident beam with an intensity of 1 / e ² of the peak value from the center is collected by a condenser lens (see, for example, “Optical Recommendation” Fig. 15-6, Optronics).

Here, in the conventional laser patterning processing, the focal beam radius w _o and the processing width radius w are actually in a relationship having the same size. This is because the ablation area is relatively large in the conventional laser processing, and therefore the laser intensity is ensured as much as possible (the absolute value of the peak value of the Gaussian distribution is therefore set to be considerably larger than the processing threshold of the ablation object. This is because there was a request to secure the processing width.

On the other hand, the present invention does not require such ablation of a large area, and conversely is a technique for performing laser processing on a fine area of 10 μm or less. In this respect, the present invention performs the following specific condition setting, which is clearly different from the conventional laser processing technology.
According to the above equation 1, the focal length f ₁₂ is long the longer the lens gap d is, and focal beam radius w _o increases.

On the other hand, the shorter the lens gap d is, the focal length f ₁₂ is shortened, and the focal beam radius w _o becomes smaller.
By thus adjusting the lens interstitial d of the zoom lens, eventually it is possible to adjust the desired focal beam radius w _o.
At this time, by keeping the laser intensity constant and increasing the focal length, the focal beam radius w _o (= 1 / e ² ) is expanded, and the waveform of the Gaussian distribution becomes gentle. Further, when the laser intensity is gradually decreased, the peak value of the Gaussian distribution is lowered. At this time, if the laser intensity is considerably reduced, the Gaussian distribution peak value is higher than the processing threshold value of the transparent conductive film, but a Gaussian distribution having a peak value in the vicinity of the threshold value is formed. And in processed surface of the workpiece WP, as shown in FIG. 6 (a), the laser intensity inside the focal point the beam diameter 2w _o is the area of 1 / e ^2, the processing width appears.

Specifically, if the processing threshold of the transparent conductive film is set within the range of 25% to 60% of the peak value with respect to the peak value of the Gaussian distribution, the processing width appears inside the focal beam. I know. In other words this when the beam width corresponding to 0.6 times the intensity level of the peak intensity h in the Gaussian distribution of laser intensity w1, the beam width corresponding to the intensity level of 0.25 times the peak intensity h and w _2, the by adjusting the processing width to fit w1 than w ₂ following conditions range in the Gaussian distribution, it may be ablated transparent conductive film portion corresponding to the working width.

Based on the above method, a desired processing width can be set by adjusting the focal beam radius w _o to be enlarged or reduced.
(Laser intensity adjustment step)
The laser intensity corresponding to the processing width adjusted to the predetermined value is determined. The laser intensity can be basically adjusted by the total laser energy per unit area given to the surface to be processed of the workpiece WP. Actually, it is comprehensively adjusted by a plurality of parameters such as pulse repetition frequency (Hz), pulse beam overlap ratio (%), work speed (mm / sec) and the like.

Once the processing width adjustment step is completed, the laser power is adjusted by a laser oscillator or an attenuator. Generally, when the laser intensity is lowered, the peak value of the Gaussian distribution is also lowered, and the processing width radius w is reduced. If this adjustment is performed as appropriate, the laser beam intensity sufficient for ablation processing is limited within the focal beam radius w _o centered at the position corresponding to the peak value, limited to the range of the processing width radius w smaller than w _o. I can concentrate.

Depending on the material characteristics of the workpiece WP, processing conditions, etc., it may be difficult to adjust the processing width adjustment step at a time. In this case, it is desirable to determine the final setting value of the processing width and the laser intensity by repeatedly performing the processing width adjustment step and the laser intensity adjustment step.
As a result of examination by the inventors here, when using a PET film on which an ITO film is formed as the transparent electrode-attached film on the workpiece WP, in the processing width adjustment step, the processing width radius w and the focal beam radius w _o The ratio is set in the range of 1.2 to 1.7, and the processing width is adjusted to 5 μm or more and 10 μm or less. On the other hand, in the laser intensity adjusting step, the laser energy per pulse applied to the ITO film can be set in the range of 0.2 μJ / pulse to 1.0 μJ / pulse.

In this setting range, as the optimum condition when the processing width is 6 μm or more and 7 μm or less, the laser energy can be set in the range of 0.3 μJ / pulse or more and 0.5 μJ / pulse or less.
According to the laser patterning step in the first embodiment described above, first, as shown in FIG. 6B, a PET film is formed by irradiating a pulse of a third harmonic YAG laser having an ultraviolet wavelength of 355 nm. Only ITO can be selectively ablated without damage. Specifically, the photon energy of a YAG-THG laser (355 nm) is 80 kcal / mol, whereas the decomposition energy of CC bond is 84 kcal / mol, so even if the film material is an organic material, There is no damage.

Here, as shown in the graph of FIG. 4, there is a clear difference in the absorptance between the PET film and ITO for the 355 nm UV laser. Thus, if a UV laser of 355 nm is used, the laser can be relatively absorbed by the ITO while allowing the laser to pass through the PET, so that the ITO on the PET can be selectively ablated.
It has been found that such an effect can be obtained in the same manner even when a hard coat layer is provided between the ITO and the PET film as shown in FIG. 5, for example.

In addition, by reducing the processing width radius w with respect to the focal beam radius w _o and patterning with weak laser intensity, the laser intensity near the bottom of the Gaussian distribution is sufficiently higher than the processing threshold at the processing width radius w. Lower. Therefore, even if the jet of the ITO material to be ablated reaches the ITO material near the processing width, the melt width of the jet and the ITO material is not so large as compared with the case of the conventional laser intensity, so that it is substantially raised. The resulting heat-affected width will be kept small.

For this reason, when the film with a transparent electrode produced in the laser patterning step of the present invention is used as a planar member of a touch panel, physical and optical distortion hardly occurs when laminated with other constituent films, and good visual recognition Will be ensured.
Furthermore, by patterning under the above conditions, the excess laser intensity is reduced, so that the transparent conductive film melted during ablation is burned out, and the boundary between the processed part and the ablated part is unclear and not linear but jagged. And the problem that the film near the boundary turns black is also avoided. In the present invention, excellent visibility is also exhibited by such an action.
[Experimental examples and selection of optimum conditions]
Hereinafter, the results of various experiments will be described for the purpose of selecting the optimum conditions when the laser patterning process of the present invention is actually performed.
(Experiment 1: Experiment to confirm superiority of third harmonic (wavelength 355 nm) laser)
First, the relationship between the laser wavelength and the processing characteristics of the film and the optimum laser wavelength for patterning were investigated.

Assuming the most practical Q-switched LD-pumped Nd: YAG laser, processing using lasers of three wavelengths (Comparative Example 1; 1064 nm, Comparative Example 2; 532 nm, Comparative Example 3; various lasers of 355 nm) Patterning experiments with a width of 9-10 μm were performed. Conventionally, since the focal beam diameter _Do and the processing width are substantially equal, the optical system is set so that the focal beam diameter _Do is 10 μm or less.
The implementation conditions at this time are as follows.

・ The diameter of the incident beam with respect to the processing lens was a constant value (5 mm) for all three wavelengths.
Comparative Example 1; wavelength 1064 nm, processing lens focal length f ₁₂ = 35 mm, focal beam diameter D ₀ = 9.5 μm
Comparative Example 2; wavelength 532 nm, focal length of processed lens f ₁₂ = 70 mm, focal beam diameter D _o = 9.5 μm
Comparative Example 3; wavelength 355 nm, focal length of processing lens f ₁₂ = 100 mm, focal beam diameter D _o = 9 μm
<< Experimental result >>
In Comparative Example 1 (wavelength 1064 nm), removal processing with a processing width of 9 to 10 μm was possible when the processing target surface was at the focal position. However, the processing width became narrow only by changing the processing target surface by about 40 μm in the vertical direction. This is because the beam diameter on the surface to be processed has increased due to the fact that the surface to be processed deviates from the focal position. In the condition setting of Comparative Example 1, there is a difference in the finish of the surface to be processed due to slight condition fluctuations. There is a possibility.

On the other hand, it was confirmed that the transparent conductive film could be removed even in the condition of Comparative Example 2 in the range of the processing width of 9 μm to 10 μm.
However, when a processing width of 10 μm or less was formed in Comparative Examples 1 and 2, a phenomenon was observed in which the PET film near the processing width partially melted and deformed. In References 1 and 2, it is considered that the amount of energy absorbed by the PET film is high, and the PET film is also affected by heat simultaneously with the processing of the transparent conductive film.

In addition, including Comparative Examples 1 and 2, the allowable variation of the machining target surface with respect to the vertical direction of a general machining system is about ± 100 μm. Therefore, in these cases, an effective removal process with a machining width of less than 10 μm cannot be performed unless the variation compensation function for the machining target surface is used.
In contrast, in Comparative Example 3 (wavelength 355 nm), the processing width hardly changed even when the processing target surface fluctuated 100 μm in the vertical direction. Also, no melt deformation of the PET film near the processing width was confirmed in Comparative Example 3.

Therefore, based on the conditions of Comparative Example 3, it was confirmed that only the transparent conductive film could be thin-line processed without thermally damaging the PET film.
The condition of Comparative Example 3 (wavelength 355 nm) is effective for removal processing with a processing width of less than 10 μm.
Here, FIG. 5 is a diagram showing the results of measuring the spectral transmittance of the transparent conductive film and the film substrate. This figure shows the spectral transmittance of a PET film, a PET film provided with a hard coat (HC) layer, and a film with a conductive film in which a hard coat layer and an ITO film are sequentially laminated on the PET surface.

As is clear from this figure, Comparative Example 3 (wavelength 355 nm) has a larger amount of beam absorption in the transparent conductive material than Comparative Example 1 (wavelength 1064 nm) and Comparative Example 2 (wavelength 532 nm). The amount of beam absorption at is small. Due to the difference in the amount of beam absorption, in Comparative Example 3, it is possible to remove only the transparent conductive film with a processing width of 9 to 10 μm without melting and deforming the PET.
However, as a result of observing the heat influence width of the transparent conductive film around the removal process, it was found that the heat influence width of each of Comparative Examples 1 to 3 was 2.5 μm or more, and a uniform processing target surface could not be formed. That is, in Comparative Example 3, thermal damage to the PET film can be prevented, but the heat affected width of the transparent conductive film cannot be suppressed.

In order to use it for touch panels related to high-precision image display, it is said that the allowable thermal influence width needs to be suppressed to about 1.5 μm, and it is necessary to further solve this problem based on Comparative Example 3. I understood.
(Experiment 2: Confirmation experiment on the relationship between energy distribution selection and thermal impact reduction)
Next, in order to find a condition that allows removal processing with a processing width of less than 10 μm and that allows the heat affected width of the transparent conductive film to be an allowable width of 1.5 μm or less, based on the comparative example 3, the pulse energy and the processing width The relationship and the relationship between the machining width and the heat affected width were obtained.

The experimental conditions were as follows.
Example 1; wavelength 355 nm, diameter of incident beam to processing lens 5 mm, processing lens focal length f ₁₂ = 100 mm, focus beam diameter D ₀ = 9 μm
The experimental results are shown in FIG. 7 (relationship between pulse energy and machining width) and FIG. 8 (relationship between machining width and heat-affected width).

As shown in FIG. 7, the focus beam diameter D _o be constant at 9 .mu.m, by controlling the increase and decrease of the pulse energy (.mu.J), it is possible to change the working width to 11μm from 4 [mu] m. The relationship between the pulse energy and the machining width exhibits linearity as shown in the figure and can be sufficiently controlled. According to the curve, it is confirmed that the machining width and the pulse energy are in a proportional relationship.

  On the other hand, as shown in FIG. 8, it is confirmed that the heat affected width of the transparent conductive film is substantially constant in the vicinity of 0.9 μm in the region where the processing width is small (4 to 6 μm). Then, as the processing width increases from 6 μm, the heat affected width gradually increases. In this figure, for example, when the processing width is 7.5 μm, the heat affected width is about 1.5 μm. This phenomenon is because the melt width of ITO (the width of the removal process strength threshold and the melt strength threshold) is small in the region where the processing width is small and is kept substantially constant, and the melt width of ITO is large in the region where the processing width is large. Conceivable.

Therefore, in order to reduce the heat affected width, it is effective to increase the gradient (see FIG. 3A) in the Gaussian distribution of the laser intensity near the edge of the processing width (removal processing intensity threshold).
According to the present invention, it has been clarified by another experiment that the thermal influence width can be reduced by setting the vicinity of the edge of the processing width to a position where the beam intensity gradient is large and 80% or less of the 1 / e ² intensity diameter. In this experimental result, the thermal influence width was 1.35 μm when the processing width was 80% (7.2 μm) of the focal beam diameter D _o (1 / e ² intensity diameter).

Therefore, in order to make the heat affected width of the transparent conductive film 1.5 μm or less, it is considered effective to make the processing width 80% or less of the focal beam diameter _Do.
In another experiment, it has been clarified that the machining width change amount and the pulse energy change amount increase as the machining width with respect to the focal beam diameter _Do decreases. In consideration of the stability of removal processing, the processing width is most appropriate and effective when the processing width is 50% or more of the focused beam diameter.

Therefore, in order to perform removal processing with a processing width of less than 10 μm, the processing width should be set to a range of 50% or more of the focal beam diameter _Do. In other words, if the diameter of the focused beam at the focal point of the surface to be processed is less than 20 μm, a processing width of less than 10 μm can be realized.
(Experiment 3: Confirmation experiment on the relationship between the variation of the machining target surface and the machining width)
Next, in consideration of actual machining variations, the surface to be processed at a constant pulse energy is used to determine the conditions of the condensing optical system that can perform stable processing even if the surface to be processed fluctuates about ± 100 μm from the focal position. The relationship between the beam diameter D and the processing width was investigated. The experimental conditions were as follows.

<Experiment 3-1>
Example 2; wavelength 355 nm, diameter of incident beam to processing lens 5 mm, processing lens focal length f ₁₂ = 100 mm, focus beam diameter D _o = 9 μm, processing width at focus position 6.3 μm (focus beam diameter D _o 70%).
In the experiment, the beam diameter D of the processing target surface was changed by shifting the processing target surface in the vertical direction from the focal position.

The results of this implementation are shown in FIG.
As shown in this figure, it was confirmed that the processing width decreased as the beam diameter D of the processing target surface increased.
When the beam overlap ratio during actual machining is a practical value of 50%, the machining width reduction allowable value is about 80%. When the beam diameter ratio (D / D _o ) becomes 1.17 times, the machining width decreases to 80%. In order to perform stable machining even when the machining target surface fluctuates ± 100 μm from the focal length f _{12 in the} vertical direction (ie, the machining width is within 80%), the fluctuation of the beam diameter D of the machining target surface is 1.17 times or less. Must be kept to a minimum.

Here, the focusing characteristic of the Gaussian beam near the focal point is z, where the distance from the focal point is z.
<Relational expression 3> w ² = w _o ² [1+ (λz / πw ₀ ² ) ² ]
It is represented by
Further, the focal beam radius w _o is expressed by the relational expression 2,
Furthermore, the beam divergence angle θ is <Relational expression 4> θ = λ / πW (W: incident beam radius)
It is represented by

According to the application of the above relational expressions 2 to 4, the focal beam diameter D _o (2 w _o ) of the optimum processing optical system when the wavelength λ = 0.355 μm, z = 100 μm, and w / w _o ≦ 1.17 is satisfied. Is
8.63 ≦ 2w _o ≦ 14.3
It becomes.
Also, (focal length f ₁₂ / incident beam radius W) is
38.2 ≤ f ₁₂ / W ≤ 63.3
It becomes.

<Experiment 3-2>
Example 3: As a difference from the second embodiment, and the processing width at the focal position and 7.2 [mu] m (80% of the focal beam diameter D _o).
The results of this implementation are shown in FIG.
As shown in this figure, it was confirmed that the processing width decreased to 80% when the beam diameter ratio (D / D _o ) increased by 1.25 times.

Further, according to the above relational expressions 2 to 4, the optimum focal beam diameter D _o (2 w _o ) when the wavelength λ = 0.355 μm, z = 100 μm, and w / w _o ≦ 1.25 is satisfied.
7.76 ≦ 2w _o ≦ 12.5
It becomes. Also, (focal length f ₁₂ / incident beam radius W) is
34.3 ≤ f ₁₂ / W ≤ 55.3.

<Experiment 3-3>
Example 4: As a difference from the second embodiment, and the processing width at the focal position and 4.5 [mu] m (50% of the focal beam diameter D _o).
Then, the beam diameter D of the processing target surface where the processing width decreases to 3.6 μm (80%) was obtained while shifting the processing target surface from the focal position.

In this case, the beam diameter D when the machining width was reduced to 80% (3.6 μm) was 9.5 μm (w / w _o = 1.06).
Further, according to the above relational expressions 2 to 4, the optimum focal beam diameter D _o (2 w _o ) when satisfying the wavelength λ = 0.355 μm, z = 100 μm, w / w _o ≦ 1.06 is 11.34 ≦ 2w _o ≦ 20, (focal length f ₁₂ / incident beam radius W) is 50.2 ≦ f ₁₂ /W<88.5.

From the above experiments 3-1 to 3-3, the optimum condition (focal length f ₁₂ / incident beam radius W) of the condensing optical system that can perform stable processing even when the surface to be processed fluctuates by about ± 100 μm is 34.3 ≦ It can be said that f ₁₂ /W≦88.5.
<Embodiment 2>
(Configuration of capacitive touch panel)
FIG. 11 is an assembly diagram illustrating a configuration example of the capacitive touch panel 4 (hereinafter referred to as “touch panel 4”) according to the second embodiment of the present invention.

As shown in FIG. 11, the touch panel 4 includes a polarizing plate 43, an adhesive layer 442, a first transparent electrode-attached film 401, an adhesive layer 443, a second transparent electrode-attached film 402, an adhesive, in order from the top to the bottom of the drawing. A layer 444, a support 451, and an adhesive layer 445 are laminated.
The touch panel 4 includes an LCD main body 433 (a unit in which a transparent conductive layer, a color filter, a liquid crystal molecular layer, a TFT substrate, and a transparent conductive layer are stacked), which is a component of the LCD device when used. A body-type touch panel device is configured. Here, the touch panel device is assumed to be used in a car navigation system as in-vehicle use.

Needless to say, the touch panel device can be used for various purposes other than the above. For example, application to a display with a high-definition touch panel (liquid crystal display integrated touch panel device), which is assumed to be used in a notebook computer, a mobile phone, a portable information terminal device, a car navigation system, or the like is assumed.
The polarizing plate 43 is made of, for example, a linear polarizing plate having a thickness of 0.2 mm, and is adhered to the entire surface of the transparent film 411 in the first transparent electrode-attached film 401 via the adhesive layer 442 and exposed to the outside. It is like that. The polarizing plate 43 suppresses the amount of reflected light caused by visible light incident on the inside of the touch panel to about half or less compared to the case where the polarizing plate is not provided. In addition, the arrangement structure (sensing pattern) of the transparent electrode groups 12b and 22b is less visible from the outside, and also serves to improve visibility.

In order to improve visibility using the polarizing plate 43, a light isotropic substrate or a phase difference substrate is used as the transparent films 411 and 421. In practice, there is a touch panel in which a polarizing plate is not stacked for reasons such as cost reduction. In that case, a low-cost film substrate can be used for the transparent films 411 and 421.
The first and second transparent electrode-equipped films 401 and 402 are main components of the touch panel, and have a known electrostatic capacity (herein, a PET film) so that sensing can be performed when the touch panel is driven. Transparent electrode groups 12b and 22b made of a material (here ITO) having a known resistance value (surface resistance) are formed on one main surface of 411 and 421.

The first and second transparent electrode-attached films 401 and 402 are disposed so that the transparent electrodes are opposed to each other, and are laminated with an adhesive layer 443 interposed therebetween.
Here, on the surface of the transparent films 411 and 421, it is preferable to dispose an acrylic resin coating layer as a countermeasure for preventing oligomer generation during heating such as patterning. Further, when a pen or a finger may come into contact with the surface, it is desirable to provide a hard coat film or the like in order to improve transparency, scratch resistance, wear resistance, non-glare property, and the like.

Further, before forming the transparent electrode groups 12b and 22b, an undercoat layer may be provided on the surface of the transparent films 411 and 421 for improving the transparency and adhesion.
Here, although the transparent conductive film material that can be used for the film with a transparent electrode film of the present invention has been described in Embodiment 1, the material of the transparent electrode groups 12b and 22b of the touch panel in Embodiment 2 is small in size. In consideration of application to electronic devices and the like, those having a low resistance value are preferable.

The transparent electrode groups 12b and 22b act as sensor traces of the touch panel 4, and are arranged in stripes on the main surfaces of the transparent films 411 and 421 facing each other through the adhesive layer 443 as shown in FIG. It is composed of a plurality of strip electrodes (line electrodes 12a1 to 12an, 22a1 to 22an).
The line electrodes 12a1 to 12an and 22a1 to 22an are processed into very fine stripes by laser patterning unique to the present application. By arranging the extending directions of the electrodes so as to be orthogonal to each other with the adhesive layer 443 interposed therebetween, an orthogonal matrix is formed by the line electrodes 12a1 to 12an and 22a1 to 22an. Such an electrode structure is patterned with a fine processing width of 10 μm or less by the laser processing apparatus 1 exemplified in the first embodiment of the present invention. Naturally patterning is not limited to a stripe shape, it is possible to set even in advance of any shape in the laser processing apparatus 1.

Here, as an example, the widths of the line electrodes 12a1 to 12an and 22a1 to 22an can be set to a minimum width of 300 μm and a maximum width of 4458 μm. On the other hand, the minimum gap between adjacent electrode gaps of the line electrodes 12a1 to 12an and 22a1 to 22an can be set to 700 μm.
Each of the line electrodes 12a1 to 12an and 22a1 to 22an is connected to a lead circuit (not shown) for supplying external power to the line electrodes 12a1 to 12an. Each surface can be provided with predetermined patterning. A known dedicated controller for applying a measurement voltage to each of the line electrodes 12a1 to 12an and 22a1 to 22an and detecting a voltage change at the time of input by the user is connected via the lead circuit.

As the transparent electrode groups 12b and 22b of the touch panel, an undercoat layer for improving a certain degree of transparency may be provided. The undercoat layer is composed of two layers having different optical refractive indexes. Of these, the low refractive index layer is disposed so as to be closer to the transparent electrode groups 12b and 22b than the high refractive index layer.
In the configuration example of FIG. 11, the example in which the transparent electrode groups 12b and 22b are disposed on one side of each of the transparent films 411 and 421 is shown, but the present invention is not limited to this configuration, and for example, one transparent electrode The transparent electrode group 12b may be disposed on one surface of the attached film (optical isotropic substrate), and the transparent electrode group 22b may be disposed on the other surface. However, in this case, it is necessary to pay attention to the handling of the substrate in the film forming process and the processing process so as not to damage the transparent electrode groups 12b and 22b.

Here, the adhesive layers 442, 444, and 445 are made of a transparent insulating material or a transparent adhesive, and are arranged so as to form an insulating layer on which the upper and lower layers are adhered. In addition to the adhesive layers 442, 444, and 445, a separate film or the like may be used as the base material for the insulating layer.
The support body 451 is for imparting the rigidity of the touch panel 4, and can be made of a glass plate having a thickness of 0.2 mm or more and 0.5 mm or less, or a resin material having hardness equivalent to this. The support 451 can exhibit good rigidity by being stuck on the entire surface with the adhesive layers 444 and 445. If the rigidity of the touch panel 4 does not matter so much, the support 451 can be omitted.

Next, the input detection principle (capacitance type) of the touch panel 4 having the above configuration will be described. FIG. 12 is a schematic diagram showing the principle of input detection.
At the time of driving, the dedicated controller passes through the lead-out circuit to the line electrodes 12a1 to 12an stretched in the x direction and the line electrodes 22a1 to 22an stretched in the y-direction for a predetermined time. A measurement voltage is applied alternately every xy.

  When the user touches the polarizing plate 3 in this state, as shown in FIG. 11, between the user's finger, the transparent films 411 and 421 (and also including the polarizing plate 43 and the adhesive layer 442), and the line electrodes 12a1 to 12an In addition, a plurality of capacitors (capacitors) are formed corresponding to the number of the line electrodes 12a1 to 12an. In FIG. 12, capacitors C1 to C5 formed by line electrodes 12a1 to 12a5 are schematically shown for ease of explanation.

In this figure, capacitors C1 to C5 formed when a measurement voltage is applied between the line electrodes 12a1 to 12an extended in the x direction are shown, but the line electrodes 22a1 to 22a1 extended in the y direction are shown. When a measurement voltage is applied to 22an, a plurality of capacitors are formed according to the same principle.
Such capacitors have different capacities according to the distance between the finger position and each line electrode, and the place where the distance is the smallest is the place where the measurement voltage has the maximum amplitude. Therefore, in the case of FIG. 12, that is, when the measurement voltage is applied between the line electrodes 12a1 to 12an, the dedicated controller specifies the place where the change in the measurement voltage is maximum, thereby Specify coordinates.

Next, in the same process as described above, the measurement voltage is applied to the line electrodes 22a1 to 22an extended in the y direction, and the line where the maximum value of the measurement voltage at that time is detected is specified, so that x Specify the direction coordinates.
Input detection is performed by the above process. In the touch panel 4, such detection steps are alternately repeated, so that input information from the user is sequentially acquired and a function as a GUI (Graphical User Interface) is exhibited.
(Specific production method of films 401 and 402 with transparent electrodes)
FIG. 13 is a diagram showing a schematic laser patterning process for the first and second transparent electrode-provided films 401 and 402. FIG.

First, a PET film is selected as the transparent films 411 and 421, ITO is selected as the material of the transparent conductive film, and an ITO film is uniformly formed on each surface of the transparent films 411 and 421 as the transparent conductive film. Any known method may be used as the film forming method, but here, a sputtering method that is inexpensive and relatively easy to manufacture is selected. Thereafter, a laser patterning process is performed.
Here, in the past, the ITO film was uniformly coated on the surface of the transparent film, and only the necessary line electrode part was left and the other parts were peeled and removed. Is unnecessary.

Specifically, the transparent electrode groups 12b and 22b composed of the line electrodes 22a1 to 22an are formed by insulating them from the surrounding ITO film, so that the processing width is formed as a ruled line by a pulse laser and cut into thin lines. To do. In FIG. 13, the ruled portions 411a and 421b are shown somewhat thicker for the sake of explanation.
By such a method, the transparent electrode groups 12b and 22b composed of the line electrodes 22a1 to 22an are formed on the transparent films 411 and 421, respectively (FIGS. 13A and 13B).

When the formed films 401 and 402 with the first and second transparent electrodes are made transparent, the surface of the watermarked films 401 and 402 with the first and second transparent electrodes is formally shown in FIG. 13 (c). As described above, there is a region X1 in which neither of the transparent electrode groups 12b and 22b exists, a region X2 in which only one of the transparent electrode groups 12b and 22b exists, and an intersecting region X3 of the transparent electrode groups 12b and 22b.
However, even if such regions X1 to X3 exist, in the touch panel of the second embodiment, the line electrodes 22a1 to 22an and the electrode gap have a fine width of 10 μm or less, which is below the normal human visual limit. Since it is formed, there is little possibility of a problem in visibility when actually viewed from the transparent film with the naked eye. As a result, an image on a high-definition LCD or the like is displayed without being damaged, and a good image display performance can be exhibited.

  In the first and second transparent electrode-provided films 401 and 402, when an extraction electrode or the like is provided in an area other than the image display portion around the film, the extraction electrode or the like may be subjected to the laser patterning process of the present invention. A known wide laser patterning process may be performed. Further, regarding the patterning of the extraction electrode or the like, it can be arranged by various etchings or the like.

Next, since such a lead-out electrode is disposed in the wiring area, it is necessary to configure it with a conductive material having a resistance value lower than that of the transparent electrode groups 12b and 22b. Moreover, you may comprise a low resistance wiring using metal pastes, such as gold | metal | money, silver, copper. Here, a silver paste was used.
In addition, any known method such as screen printing, gravure printing, or mask printing may be used as a configuration method of the lead-out electrode.

(Other matters)
In the first embodiment, the configuration using the Nd: YAG laser is exemplified, but the present invention is not limited to this, and an Nd: YVO ₄ laser, an Nd: YLF laser, a Ti: sapphire laser, or the like is used. Can do.

  The touch panel of the present invention can be used for, for example, a notebook computer, a mobile phone, a portable information terminal device, a car navigation system, or a display with a touch panel (liquid crystal display integrated touch panel device) that is expected to be used in high definition. Is possible.

1 is a configuration diagram of a laser processing apparatus in Embodiment 1 of the present invention. FIG. It is a functional block diagram of a laser processing apparatus. It is a graph which shows the relationship between laser intensity distribution and a beam diameter. It is a graph which shows the relationship between film material and an absorptance. It is a graph which shows the transmittance | permeability characteristic of a film with a transparent conductive film. It is a schematic diagram which shows the mode of laser patterning. It is a graph which shows the relationship between pulse energy and processing width. It is a graph which shows the relationship between a process width and a heat influence width. It is a graph which shows the relationship between a beam diameter and a processing width. It is a graph which shows the relationship between a beam diameter and a processing width. FIG. 5 is a configuration diagram of a capacitive touch panel according to Embodiment 2 of the present invention. It is a schematic diagram for demonstrating the input detection principle (capacitance type) of a capacitive touch panel. It is a figure which shows the mode of patterning of a planar member.

Explanation of symbols

w _o Focus beam radius
w Machining width radius
1 Laser processing equipment (laser trimming equipment)
4 Capacitive touch panel
2 Laser irradiation system
10 xy table
11 pedestal
12 Bridge section
12a1-12an, 22a1-22an line electrode
12b, 22b Transparent electrode group
13 y-axis table
14 x axis table
20 Laser beam irradiation equipment
100 machining head
201 Beam transmission system
211 Third harmonic generator
212 Athenata
213 Beam Expander
411 Film with first transparent electrode
421 Second film with transparent electrode
411a, 421b Ruled part
443 Adhesive layer

Claims (11)

A method for producing a film with a transparent electrode, comprising a laser patterning step of forming a transparent electrode by patterning with a processing width of 10 μm or less by scanning a UV laser on the transparent conductive film formed on the transparent film surface,
In the laser patterning step,
The range corresponding to the intensity from the peak in the Gaussian distribution of the laser intensity to 1 / e ^{2 of the} peak is the focal beam radius,
And the focus beam radius is set to be larger than the radius of the processing width by adjusting the peak value ,
By setting the laser intensity at the processing width in the range of 25% to 60% of the peak value,
A method for producing a film with a transparent electrode, comprising adjusting a laser intensity for ablating a transparent conductive film portion corresponding to the processing width. A method for producing a film with a transparent electrode, comprising a laser patterning step of forming a transparent electrode by patterning with a processing width of 10 μm or less by scanning a UV laser on the transparent conductive film formed on the transparent film surface,
In the laser patterning step,
When the beam width corresponding to the intensity level 0.6 times the peak intensity h in the Gaussian distribution of the laser intensity is w ₁ and the beam width corresponding to the intensity level 0.25 times the peak intensity h is w ₂ , w _A method for producing a film with a transparent electrode, wherein a range of ₁ or more and w ₂ or less is a processing width, and a transparent conductive film portion corresponding to the processing width is ablated. The method for producing a film with a transparent electrode according to claim 1 or 2, wherein, in the laser patterning step, a size ratio between a focal beam radius and a processing width radius is adjusted by adjusting a focal length. 4. The laser patterning process according to claim 1, wherein a ratio w / w _o between a processing width radius w and a focal beam radius w _o is adjusted to 0.8 or less. 5. A method for producing a film with a transparent electrode. 5. The method for producing a film with a transparent electrode according to claim 1, wherein a UV laser having a wavelength of 320 nm to 450 nm is used as the UV laser in the laser patterning step. The method for producing a film with a transparent electrode according to any one of claims 1 to 5, wherein in the laser patterning step, a third harmonic of a YAG laser is used as the UV laser. In the laser patterning step,
The patterning conditions are adjusted so that the ratio f ₁₂ / W of the laser focal length f ₁₂ of the processing lens optical system and the lens incident beam radius W in the laser irradiation apparatus is 34% or more and 89% or less. The manufacturing method of the film with a transparent electrode in any one of Claim 1 to 6. In the laser patterning step,
In the case of processing a film with a transparent electrode using an ITO film as the transparent conductive film, a PET film as the transparent film,
The ratio of the processing width radius w to the focal beam radius w _o is set in the range of 1.2 to 1.7, the processing width is adjusted to 5 μm to 10 μm,
The laser energy per pulse given to the ITO film is set in a range of 0.2 µJ / pulse to 1.0 µJ / pulse. Production of a film with a transparent electrode according to any one of claims 1 to 7 Method.   A film with a transparent electrode for a touch panel, which is manufactured by the method for manufacturing a film with a transparent electrode according to claim 1. A capacitive touch panel using a film with a transparent electrode, which is provided with a plurality of transparent electrodes on one main surface of the transparent film,
The said film with a transparent electrode is comprised with the film with a transparent electrode of Claim 9. The touch panel characterized by the above-mentioned. It is a capacitive touch panel using a film with a transparent electrode in which a plurality of transparent electrodes are provided on both main surfaces of the transparent film,
The said film with a transparent electrode is comprised with the film with a transparent electrode of Claim 9. The touch panel characterized by the above-mentioned.

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