JP2007319880A - Method for producing substance, laser beam machining apparatus, method for producing tft substrate, method for producing multilayer structure substrate and method for producing liquid crystal display - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a method for producing a base substance where a base substance is cut/divided using laser light, by which, even if dust or the like is stuck to the surface of a base substance, the base substance can be cut/divided with high precision. <P>SOLUTION: The method for producing a substrate P as a base substance is provided with: a stage where a film 48 is formed on the substrate P; a stage where the film 48 is irradiated with laser light 45, and the film 48 is transpired, so as to form a film removed part 49; a stage where the laser light 45 is further emitted so as to be connected with the film removed part 49, thus a material denatured part 47 is formed at the substrate P; a film residue detection stage where the film residue 48b in the film removed part 49 is detected; and a stage where a stress F is applied to the base substance P, so as to form divided pieces Q. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a method of manufacturing a substrate using laser light, a laser processing apparatus, a method of manufacturing a TFT substrate, a method of manufacturing a multilayer structure substrate, and a method of manufacturing a liquid crystal display device.

  Conventionally, when a substrate such as a semiconductor material substrate, a piezoelectric material substrate, or a glass substrate is cut, there is a method of cutting and dividing the substrate by irradiating the substrate with laser light.

  For example, as disclosed in Patent Document 1, in a method of cutting and dividing a substrate such as a semiconductor material substrate, a piezoelectric material substrate, or a glass substrate, laser light that is absorbed by the substrate is irradiated along the planned cutting line, There has been proposed a method in which a modified region portion by multiphoton absorption is formed from the front surface to the back surface of a substrate, and a divided piece is formed by cutting and dividing along the modified region portion.

JP 2002-192371 A

  However, in the method of Patent Document 1, when dust or the like is attached to the surface of the substrate, the laser beam is less likely to be condensed inside the substrate at the location where the dust is attached, and the inside of the substrate is modified. In some cases, the region portion could not be formed normally. When the substrate is divided along the modified region portion by applying stress to the substrate from the outside, it is difficult to divide the substrate where the modified region portion does not exist compared to where the modified region portion exists. In some cases, poor division occurs. In particular, in the case of a substrate with a warp or a laminated body such as a multilayer structure substrate, the laser beam may not be collected at a desired position. It was a factor that could not be well formed. Therefore, it is necessary to confirm whether or not the modified region portion is accurately formed inside the substrate before dividing the substrate, but there is an inconvenience that it is not known unless the substrate is divided.

  An object of the present invention is a manufacturing method for cutting and dividing a substrate by using a laser beam, and a substrate manufacturing method capable of cutting and dividing a substrate with high precision even if dust or the like is attached to the surface of the substrate. Is to provide.

  The substrate manufacturing method of the present invention includes a step of forming a film on the substrate, a step of irradiating the film with laser light to evaporate the film to form a film removal portion, and a connection to the film removal portion. The laser beam is further irradiated to form a material alteration portion on the substrate, a film residue detection step to detect a film residue in the film removal portion, a stress is applied to the substrate, And a step of forming the structure.

  According to the present invention, since the film residue detection step for detecting the film residue is provided, the material alteration portion can be accurately placed inside the base body by dividing the base body by checking the degree of the film residue in the film removal section. It can be determined whether or not it is formed. If the substrate is divided after determining whether or not the material altered portion is formed inside the substrate, it is possible to suppress the division failure during the cutting / dividing of the substrate and to improve the yield.

  In the substrate manufacturing method of the present invention, in the step of forming the film, it is desirable that the film is formed on any one of the surfaces of the substrate.

  According to the present invention, if the film is formed on one surface of the substrate, the film residue can be detected, and therefore it is easily determined whether or not the material altered portion is accurately formed inside the substrate. can do.

  In the substrate manufacturing method of the present invention, in the step of forming the film, it is desirable that the material of the film is a material that absorbs the laser beam.

  According to the present invention, since the material of the film is a material that can absorb laser light, it can be easily determined whether or not the material altered portion is formed inside the substrate.

  In the substrate manufacturing method of the present invention, in the step of forming the film, the material of the film is preferably one of a metal material and a resin material.

  According to this invention, since the material of the film is any one of a metal material and a resin material, the film can be easily formed on the substrate by utilizing various film forming methods.

  In the substrate manufacturing method of the present invention, in the step of forming the film removal portion, the laser beam is either a YAG laser or a titanium sapphire laser, and the substrate is either the YAG laser or the titanium sapphire laser. It is desirable to form the film removal portion by irradiating the film.

  According to the present invention, since the laser light is a short pulse laser typified by a YAG laser or the like, or an ultrashort pulse laser typified by a titanium sapphire laser, a material altered portion can be formed at a predetermined position of the substrate. it can.

  In the method for manufacturing a substrate according to the present invention, in the film residue detection step, the film residue detection method is preferably an image recognition method that recognizes the film residue with an image.

  According to the present invention, since it is an image recognition method for recognizing a film residue with an image, it is possible to easily detect the film residue, and therefore it is possible to easily determine whether or not the substrate can be divided.

  In the method of manufacturing a substrate according to the present invention, in the step of forming the material altered portion, the laser beam is branched into a plurality of beams by a diffractive optical element, and the plurality of beams are irradiated to form the material altered portion. It is desirable.

  According to the present invention, the laser beam is split into a plurality of beams by the diffractive optical element, so that the beam is split. By irradiating the split beam onto the base, a plurality of material altered portions are formed inside the base. it can.

  In the substrate manufacturing method of the present invention, in the step of forming the divided pieces, it is desirable to form the divided pieces by applying either one of bending stress or tensile stress to the substrate.

  According to the present invention, since the base can be cut and divided only by applying stress to the base, the divided pieces can be easily formed.

  According to the substrate manufacturing method of the present invention, in the step of forming the divided pieces, the divided piece forming method determines that the film residue does not exist in the film removal portion and then divides the substrate. Is desirable.

  According to the present invention, since it is a method of dividing the substrate after determining that no film residue is present in the film removal portion, the substrate is recognized after recognizing that the material altered portion is accurately formed inside the substrate. Since the substrate is divided, it is possible to suppress the division failure when the substrate is cut and divided, and to improve the yield.

  The laser processing apparatus of the present invention is a laser processing apparatus that irradiates a base with laser light and cuts the base, and a condensing element that condenses the laser light on the base and the base can be mounted. A stage, a stage control unit for controlling the stage, a film on the substrate, and a laser light source for irradiating the laser beam on the substrate to form a film removal unit on the film and a material alteration unit on the substrate; Control for controlling a laser control unit for controlling the laser light source, an image recognition unit for recognizing a film residue of the film removal unit by an image, the stage control unit, the laser control unit, and the image recognition unit And the controller determines whether the substrate can be divided after the image recognition unit recognizes the film residue.

  According to the present invention, it is possible to provide a laser processing apparatus capable of determining whether or not the material altered portion is accurately formed in the substrate by recognizing the film residue of the film removing portion with the image recognition portion.

  The TFT substrate manufacturing method of the present invention is characterized in that it is formed by using the above-described substrate manufacturing method.

  According to this invention, since the TFT substrate is formed by the above-described substrate manufacturing method, the TFT substrate can be manufactured with high accuracy.

  The method for producing a multilayer structure substrate of the present invention is characterized in that it is formed by the method for producing a substrate described above.

  According to the present invention, since the multilayer structure substrate is formed by the above-described substrate manufacturing method, the multilayer structure substrate can be manufactured with high accuracy.

  The method for producing a liquid crystal display device of the present invention is characterized by being formed by the above-described method for producing a substrate.

  According to this invention, since the liquid crystal display device is formed by the above-described substrate manufacturing method, the liquid crystal display device can be manufactured with high accuracy.

Hereinafter, embodiments of the method for producing a substrate of the present invention will be described in detail with reference to the accompanying drawings. Before describing the characteristic manufacturing method of the present invention, a substrate used in the present embodiment and a forming method for forming a material-modified portion in the substrate will be described.
<Substrate>

The substrate that can be used in this embodiment can be made of a material such as glass, quartz, quartz, or silicon (mainly a ceramic material). Here, quartz is used as the base material.
<Formation method of material alteration part>

  A formation method for forming a material altered portion in the substrate by irradiating the substrate with laser light will be described.

  FIG. 1 is an explanatory diagram for explaining a method for forming a material-affected portion as a modified layer by laser light.

  In FIG. 1, a laser beam 45 is condensed and irradiated inside a substrate P as a base, and the laser beam 45 is scanned in a scanning direction X (dividing direction). Since the laser beam 45 is condensed by the lens 46 as a condensing element, the laser beam 45 can be focused inside the substrate P. When the laser beam 45 is scanned in the scanning direction X (division direction), the material altered portion 47 as a modified layer can be formed inside the substrate P. The moving speed of the laser beam 45 in the scanning direction X is 100 mm / sec. The thickness of the substrate P is about 200 μm.

  Further, since the amount of the material altered portion 47 as the modified layer can be several tens of μm only by scanning the laser beam 45 once, in order to form the material altered portion 47 in the entire depth direction of the substrate P. Needs to scan the laser beam 45 several times in the scanning direction X (division direction). Each time the laser beam 45 is scanned, the focal position of the lens 46 as a condensing element is raised from the lower surface of the substrate P toward the upper surface. Here, the reason why the focal position of the laser beam 45 is raised from the lower surface to the upper surface of the substrate P is that the laser beam 45 is scattered by the material altered portion 47 formed earlier, and the entire region in the depth direction of the substrate P. This is to prevent the material altered portion 47 from being unable to be formed.

(Embodiment)
In the present embodiment, a film is formed on one surface of the substrate, a laser beam is irradiated to the substrate from the other surface where the film is not formed, and a material alteration portion is formed inside the substrate, and stress is applied from the outside of the substrate. In addition, a manufacturing method for cutting and dividing the substrate to form divided pieces will be described.

  FIG. 2 is a schematic diagram of the laser processing apparatus in the present embodiment, and FIG. 3 is a block diagram of a control system of the laser processing apparatus.

  The laser processing apparatus will be described with reference to FIGS.

  As shown in FIG. 2, the laser processing apparatus 100 condenses the laser light source 101 that emits the laser light 45, the dichroic mirror 102 that reflects the emitted laser light 45, and the laser light 45 that is reflected by the dichroic mirror 102. And a lens 46 as a condensing element. Further, a stage 107 on which a substrate P as a base body to be processed is placed, and an X-axis slide unit 110 that moves the stage 107 in the X-axis direction and the Y-axis direction with respect to the lens 46 as a condensing element, and Y-axis slide part 108 is provided.

  Further, a Z-axis slide mechanism 104 that adjusts the position of the condensing point of the laser light 45 by changing the position of the lens 46 as a condensing element in the Z-axis direction with respect to the substrate P placed on the stage 107 is provided. Yes. Furthermore, an imaging device 112 is provided on the opposite side of the lens 46 as a light condensing element with the dichroic mirror 102 interposed therebetween. The imaging device 112 includes a coaxial incident light source (not shown) and a CCD (Charge Coupled Device) (not shown). The imaging device 112 is connected to the image recognition unit 135, and the image recognition unit 135 can recognize an image captured by the imaging device 112. The image data recognized by the image recognition unit 135 is configured to be captured by the image processing unit 124. Then, the visible light emitted from the coaxial incident light source passes through the lens 46 as a condensing element and is focused.

  The lens 46 as a condensing element is supported by a slide arm 104 a extending from the Z-axis slide mechanism 104. The lens 46 as a condensing element is an objective lens having a magnification of 100 times, a numerical aperture of 0.8, and a WD (Working Distance) of 3 mm.

Here, a laser beam 45 having transparency to the substrate P is employed. In this embodiment, the laser beam 45 emitted from the laser light source 101 is a YAG laser that excites a semiconductor laser. The YAG laser is a so-called nanosecond laser that emits with a nanosecond pulse width. Detailed conditions of the laser beam 45 in this case are as follows. The laser light source 101 excites a semiconductor laser. Laser medium: Nd: YAG. Laser wavelength: 1064 nm. Laser light spot cross section: 3.14 × 10 ⁻⁸ cm ² . Oscillation form: Q switch pulse. Repeat frequency: 100 KHz. Pulse width: 30 ns. Output: 20 μJ / pulse. Laser light quality: TEM ₀₀ . Polarization characteristics: linearly polarized light (C). Condenser lens magnification: 50 times. NA: 0.55. Transmittance with respect to laser light wavelength: 60% (D). Movement speed: 100 mm / sec.

  The laser wavelength of the YAG laser does not stick to 1064 nm, and for example, the second harmonic of the YAG laser may be used. The laser wavelength of the second harmonic is 532 nm. Further, the laser beam 45 may not be a YAG laser, and for example, an ultrashort pulse laser represented by a titanium sapphire laser may be adopted. If a titanium sapphire laser, which is an ultrashort pulse laser, is used, even if the beam diameter is somewhat increased due to the influence of aberration, internal processing can be performed without any problem, and the material-affected portion 47 can be formed. Detailed conditions of the laser beam 45 in this case are as follows. Laser wavelength: about 800 nm. Pulse width: about 300 fs (femtosecond). Pulse period: 1 kHz. Output: about 700 mW.

  The laser light source 101 that emits the laser beam 45 is controlled by the laser control unit 121 under predetermined conditions.

  As shown in FIG. 3, the laser processing apparatus 100 (see FIG. 2) includes a main computer 120 that can control each of the above components. The main computer 120 includes a CPU 127 (Central Processing Unit), a RAM 128 (Random Access Memory), and an image processing unit 124. The CPU 127 has a function capable of determining when a machining abnormality occurs. The RAM 128 has a function capable of storing the coordinate position of the scheduled cutting line.

  The main computer 120 is connected to an input unit 125 and a display unit 126. The input unit 125 can input data of various processing conditions used in laser processing. The display unit 126 can display various information at the time of laser processing.

  The laser control unit 121 is connected to the main computer 120 by a buffer 129 via the I / F 131, and can control the output of the laser light source 101, the pulse width, the pulse period, and the like.

  The lens control unit 122 is connected to the main computer 120 by a buffer 129 via the I / F 131. The lens control unit 122 has a built-in position sensor (not shown) that can detect the moving distance. Then, by detecting the output of the position sensor, the Z-axis slide mechanism 104 (see FIG. 2) can be driven to control the position of the lens 46 as the light condensing element in the Z-axis direction.

  The stage control unit 123 is connected to the main computer 120 by a buffer 129 via the I / F 131. The stage control unit 123 is a servo motor (shown) that moves the X-axis slide unit 110 (see FIG. 2) and the Y-axis slide unit 108 (see FIG. 2) along the rails 111 and 109 (see FIG. 2), respectively. (Omitted) can be driven.

  The image processing unit 124 is connected to the image recognition unit 135 and the imaging device 112 via the I / F 131. The image processing unit 124 can confirm the position of the lens 46 in the Z-axis direction and can adjust the focal position of the lens 46 based on the imaging data of the image information acquired by the imaging device 112. . Further, the image processing unit 124 can confirm the position of the planned cutting line on the substrate P and can perform a process of adjusting the position.

  The image recognizing unit 135 is connected to the main computer 120 via the I / F 131 by a buffer 129, and can transmit imaging data acquired by the imaging device 112 to the image processing unit 124. The image recognition unit 135 can determine the acquired imaging result.

  The laser processing apparatus 100 includes a main computer as a control unit that can control the laser control unit 121, the lens control unit 122, the stage control unit 123, the image processing unit 124, and the image recognition unit 135. 120.

  FIG. 4 is an explanatory diagram for explaining a method of forming a film removal portion when dust is not attached to the substrate, FIG. 4 (a) is a cross-sectional view, and FIG. 4 (b) It is explanatory drawing seen from the arrow direction of figure (a).

  With reference to FIGS. 4A and 4B, a formation method for forming a film removal portion by irradiating a film with laser light will be described.

  As shown in FIG. 4A, the laser beam 45 is irradiated from the incident surface Pu side of the substrate P toward the emission surface Pd side. The irradiated laser beam 45 is condensed by the lens 46 and condensed inside the film 48 formed on the substrate P. Then, as shown in FIG. 4B, a part of the film 48 is evaporated and removed by the laser energy of the laser beam 45 irradiated to the film 48. And the film removal part 49 is formed. At the same time, the film 48 is divided into divided films 48a.

  FIG. 5 is an explanatory diagram for explaining a method of forming a film removal portion when dust is attached on a substrate, FIG. 5 (a) is a cross-sectional view, and FIG. It is explanatory drawing seen from the arrow direction of figure (a).

  With reference to FIGS. 5A and 5B, a formation method for forming a film removal portion by irradiating a film with laser light will be described.

  As shown in FIG. 5A, the laser beam 45 is irradiated from the incident surface Pu side of the substrate P toward the emission surface Pd side. However, on the substrate P, dust K is attached to the incident surface Pu side of the laser beam 45. The laser beam 45 can pass through the substrate P at the place where the dust K is not attached on the substrate P. However, the laser beam 45 can pass through the substrate P at the place where the dust K is attached. Absent. Then, as shown in FIG. 5B, the laser beam 45 is blocked without passing through the substrate P where the dust K is attached to the substrate P. Some will remain. This remaining film 48 is a film residue 48b. And the film | membrane residue 48b exists so that the film | membrane removal part 49 may be interrupted.

  FIG. 6 is a view showing a manufacturing method for cutting and dividing a substrate in this embodiment to form divided pieces, and FIG. 6A is a view showing a forming process for forming a film on the substrate. b) is a diagram showing a formation process of forming a film removal portion by irradiating a laser beam, and FIG. (c) is a diagram showing a formation process of forming a material altered portion by irradiating a laser beam; Fig. (D) is a diagram showing a detection process for detecting a film residue, and Fig. (E) is a diagram showing divided pieces. FIG. 7 is a flowchart for explaining a manufacturing procedure for cutting and dividing a substrate to form divided pieces.

  With reference to FIG. 6 and FIG. 7, the manufacturing method of a division | segmentation piece is demonstrated.

  In step S1 of FIG. 7, a film 48 is formed on the substrate P as shown in FIG. The film 48 is formed on one of the two surfaces of the substrate P. Since the film 48 may be any material that can absorb laser light, a metal material, a resin material, or the like can be used. If the material of the film 48 is a metal material, for example, aluminum, gold, silver, chromium, nickel, titanium, or the like can be used. Further, an alloyed material of these metals may be used. As a method for forming the film 48 using these metal materials, a thin film forming method such as a vacuum evaporation method or a sputtering method can be employed. The thickness of the film 48 is preferably in the range of 0.1 μm to 3 μm because the laser beam 45 can be absorbed. More preferably, a thickness in the range of 0.1 μm to 1 μm is desirable because the film formation time when forming the film 48 can be shortened. In addition, if the material of the film 48 is a resin material, the degree of transpiration is faster than that of a metal material, so that it can be expected that the presence or absence of the film 48 can be determined in a short time. For example, PI (polyimide), PC (polycarbonate), PMMA (polymethyl methacrylate), resist, or the like can be used as the resin material employed here. As a method for forming the film 48 using these resin materials, a coating method such as a roll coating method or a spin coating method can be employed.

  Next, in step S2 of FIG. 7, as shown in FIGS. 6B and 6C, internal processing is performed. In this internal processing, the laser beam 45 is condensed by a lens 46 as a condensing element and emitted to the substrate P. The film 48 is irradiated with the emitted laser light 45, and a part of the film 48 is evaporated to form a film removal portion 49. At the same time, the dividing film 48a is formed. Subsequently, the laser beam 45 is emitted to form a material altered portion 47 as a modified layer inside the substrate P. The laser beam 45 used here is a nanosecond laser employing a YAG laser.

  Next, in step S3 of FIG. 7, a film residue inspection is performed as shown in FIG. In this film residue inspection, the residue of the film 48 formed on the substrate P is inspected, and whether or not the film residue 48b exists in the film removal unit 49 is determined using the imaging device 112 (see FIG. 2). Take an image. And the data imaged with the imaging device 112 is transmitted to the image recognition part 135 (refer FIG. 2), the image recognition part 135 recognizes, and test | inspects. If it is found that the film residue 48b does not exist in the film removal portion 49, the laser beam 45 is irradiated inside the substrate P. Therefore, the material altered portion 47 is accurately placed inside the substrate P. It will be formed. On the contrary, if it is found that the film residue 48b is present in the film removal portion 49, the laser beam 45 is shielded by the dust K and is not irradiated to the inside of the substrate P. 47 is not formed normally.

  Next, in step S4 of FIG. In this determination, whether or not the film residue 48b exists in the film removal unit 49 is determined using the laser processing apparatus 100 shown in FIG. If it is found that the film residue 48b does not exist in the film removal unit 49, the process proceeds to the next division in step S5. On the contrary, if it is found that the film residue 48b is present in the film removal unit 49, the process returns to the previous internal processing in step S2. Then, if a light shielding object such as dust K (see FIG. 5A) that shields the laser beam 45 is removed from the substrate P, and then the internal processing is performed on the portion where the film residue 48b exists, the substrate The material altered portion 47 can be accurately formed inside P.

  Next, in step S5 of FIG. 7, division is performed as shown in FIG. 6 (e). In this dividing method, stress F is applied to the substrate P from the upper surface side of the substrate P. As a method of applying the stress F from the outside of the substrate P, for example, bending or shearing stress is applied to the substrate P along a planned cutting line. Also, thermal stress can be generated by giving a temperature difference to the substrate P. When a stress F is applied to the substrate P having the material altered portion 47 from the outside, the divided pieces Q can be formed.

According to the substrate manufacturing method of the embodiment as described above, the following effects can be obtained.
(1) Since a film residue inspection process as a film residue detection process for detecting the film residue 48b is provided, the degree of the film residue 48b in the film removal unit 49 is confirmed, so that the substrate P is divided before the substrate P is divided. It is possible to determine whether or not the material altered portion 47 is formed with high accuracy. If the substrate P is divided after determining whether or not the material altered portion 47 is formed inside the substrate P, it is possible to suppress the division failure when the substrate P is cut or divided, and to improve the yield. it can.
(2) If the film 48 is formed on either surface of the substrate P, the film residue 48b can be detected, so whether or not the material altered portion 47 is accurately formed inside the substrate P. It can be easily determined.
(3) Since the material of the film 48 is an absorptive material capable of absorbing the laser light 45, it can be easily determined whether or not the material altered portion 47 is formed inside the substrate P. .
(4) Since the material of the film 48 is one of a metal material and a resin material, the film 48 can be easily formed on the surface of the substrate P by utilizing various film forming methods.
(5) Since the laser beam 45 is a short pulse laser typified by a YAG laser or the like, or an ultrashort pulse laser typified by a titanium sapphire laser, the material altered portion 47 can be formed at a predetermined position of the substrate P. it can.
(6) Since this is an image recognition method for recognizing the film residue 48b with an image, the film residue 48b can be easily detected, and therefore whether or not the substrate P can be divided can be easily determined.
(7) Since the substrate P can be cut and divided simply by applying the stress F to the substrate P, the divided pieces Q can be easily formed.
(8) Since it is a method of dividing the substrate P after determining that the film residue 48b does not exist in the film removal portion 49, it is recognized that the material alteration portion 47 is accurately formed inside the substrate P. Then, since the substrate P is divided, it is possible to suppress the division failure when the substrate P is cut or divided, and to improve the yield.
(9) The laser processing apparatus 100 capable of determining whether or not the material altered portion 47 is accurately formed inside the substrate P by recognizing the film residue 48b of the film removing portion 49 by the image recognition portion 135. Can provide.

  Next, a liquid crystal panel as a display device according to the present invention will be described.

  FIG. 8 is a schematic view showing the structure of the liquid crystal panel in the present embodiment, where FIG. 8 (a) is a schematic plan view, and FIG. 8 (b) is taken along line AA in FIG. It is the schematic sectional drawing cut | disconnected along.

  As shown in FIGS. 8A and 8B, the liquid crystal panel 10 includes a TFT substrate 1 having a TFT 3, a counter substrate 2 having a counter electrode 6, and a TFT substrate 1 bonded by a sealing material 4. And a liquid crystal 5 filled in a gap with the substrate 2.

As the TFT substrate 1, a quartz substrate having a thickness of about 1.2 mm is used, and the surface thereof is composed of a pixel electrode (not shown) constituting a pixel and a plurality of transistor elements (not shown). TFT3 is formed. One of the three terminals of the individual transistor elements constituting the TFT 3 is connected to the pixel electrode, and the other two are data lines (in the figure) arranged in a grid in a state of being insulated from each other surrounding the pixel electrode. And a scanning line (not shown). The data line and the scanning line are connected to the drive circuit unit 9 in the terminal unit 1a through the wiring pattern 11. The input side wiring pattern 12 of the drive circuit unit 9 is connected to the mounting terminals 13 arranged in the terminal unit 1a. The TFT substrate 1 is manufactured by the cutting / dividing method described in the present embodiment.

  The counter substrate 2 includes a counter substrate body 2 a, a microlens 15, and a cover glass 16. A quartz substrate having a thickness of about 1.1 mm is used as the counter substrate main body 2a, and a microlens surface 2b is formed on a portion of the TFT substrate 1 facing the pixel electrode. The microlens 15 is formed by filling the microlens surface 2b of the counter substrate body 2a with a compatible resin. A quartz substrate having a thickness of about 50 μm is used for the cover glass 16, and is bonded to the counter substrate body 2 a with a compatible resin forming the microlens 15.

The microlens 15 functions to improve the aperture ratio of the liquid crystal panel 10 and has a one-to-one correspondence with the pixel electrode. The cover glass 16 protects the microlens 15 by covering the entire area of the counter substrate body 2a.

The counter substrate 2 is provided with a counter electrode 6 as a common electrode. The counter electrode 6 is electrically connected to a wiring pattern (not shown) provided on the TFT substrate 1 side through vertical conduction parts 14 provided at the four corners of the counter substrate 2, and the wiring pattern is also provided in the terminal part 1a. Connected to the mounting terminals 13. Alignment films 7 and 8 are respectively formed on the surface of the TFT substrate 1 facing the liquid crystal 5 and the surface of the counter substrate 2. The multilayer structure substrate 17 is composed of the TFT substrate 1 and the counter substrate 2. The multilayer structure substrate 17 is manufactured by the cutting and dividing method described in this embodiment.

The liquid crystal panel 10 is a relay board (not shown) that is electrically connected to an external drive circuit (not shown).
Is connected to the mounting terminal 13. When an input signal from the external drive circuit is input to the drive circuit unit 9, the TFT 3 is switched for each pixel electrode, and a drive voltage is applied between the pixel electrode and the counter electrode 6 to perform display. .

  Since the TFT substrate 1 is manufactured by the cutting and dividing method described in this embodiment, the TFT substrate 1 can be manufactured with high accuracy. Further, since the multilayer structure substrate 17 composed of the TFT substrate 1 and the counter substrate 2 is manufactured by the cutting and dividing method described in the present embodiment, the multilayer structure substrate 17 can be manufactured with high accuracy. .

  Next, a liquid crystal display device which is an example of the electro-optical device according to the invention will be described.

  FIG. 9 is an exploded perspective view of a liquid crystal display device as an electro-optical device.

  As shown in FIG. 9, the liquid crystal display device 500 includes a multilayer circuit board 30. The liquid crystal display device 500 includes a color display liquid crystal panel 10, a multilayer circuit board 30 connected to the liquid crystal panel 10, a liquid crystal driving IC 300 mounted on the multilayer circuit board 30, and the like. If necessary, an illumination device such as a backlight and other auxiliary devices are attached to the liquid crystal panel 10. The liquid crystal display device 500 has a COF (Chip / On / Film) structure.

  The liquid crystal panel 10 has a pair of TFT substrates 1 and a counter substrate 2 bonded by a sealing material 4, and liquid crystal is formed in a gap (cell gap) formed between the TFT substrate 1 and the counter substrate 2. 5 (see FIG. 8) is sealed, and the sealed liquid crystal 5 is sandwiched between the TFT substrate 1 and the counter substrate 2. The TFT substrate 1 and the counter substrate 2 are generally formed of a translucent material such as quartz, glass, synthetic resin or the like. A polarizing plate 56 is attached to the outer surfaces of the TFT substrate 1 and the counter substrate 2.

  Further, the pixel electrode 66 is formed on the inner surface of the TFT substrate 1, and the counter electrode 6 is formed on the inner surface of the counter substrate 2. The pixel electrode 66 and the counter electrode 6 are formed of a light-transmitting material such as ITO ((Indium / Tin / Oxide): indium tin oxide). The TFT substrate 1 has a projecting portion that projects from the counter substrate 2, and a plurality of mounting terminals 13 are formed on the projecting portion. These mounting terminals 13 are formed simultaneously with the pixel electrode 66 when the pixel electrode 66 is formed on the TFT substrate 1. Accordingly, these mounting terminals 13 are made of, for example, ITO. These mounting terminals 13 include one that extends integrally from the pixel electrode 66 and one that is connected to the counter electrode 6 via a conductive material (not shown).

  On the other hand, wiring patterns 39 a and 39 b are formed on the surface of the multilayer circuit board 30. That is, an input wiring pattern 39a is formed from one short side to the center of the multilayer circuit board 30, and an output wiring pattern 39b is formed from the other short side to the center. Electrode pads (not shown) are formed at the ends of the input wiring pattern 39a and the output wiring pattern 39b on the center side.

  A liquid crystal driving IC 300 is mounted on the surface of the multilayer circuit board 30. Specifically, with respect to a plurality of electrode pads (not shown) formed on the surface of the multilayer circuit board 30, a plurality of bump electrodes formed on the active surface of the liquid crystal driving IC 300 are connected to an ACF (Anisotropic Conductive • (Film: anisotropic conductive film) 160 is connected. The ACF 160 is formed by dispersing a large number of conductive particles in a thermoplastic or thermosetting adhesive resin. As described above, the so-called COF structure is realized by mounting the liquid crystal driving IC 300 on the surface of the multilayer circuit board 30.

  A multilayer circuit board 30 including a liquid crystal driving IC 300 is connected to the TFT substrate 1 of the liquid crystal panel 10. Specifically, the output wiring pattern 39 b of the multilayer circuit board 30 is electrically connected to the mounting terminal 13 of the TFT substrate 1 via the ACF 140. Since the multilayer circuit board 30 has flexibility, space saving can be realized by freely folding it.

  In the liquid crystal display device 500 configured as described above, a signal is input to the liquid crystal driving IC 300 via the input wiring pattern 39 a of the multilayer circuit board 30. Then, a driving signal is output from the liquid crystal driving IC 300 to the liquid crystal panel 10 via the output wiring pattern 39 b of the multilayer circuit board 30. As a result, an image is displayed on the liquid crystal panel 10.

  Since the liquid crystal panel 10 as the display device includes the multilayer structure substrate 17 formed with high accuracy, the liquid crystal display device 500 capable of improving the yield can be provided.

  Next, an electronic apparatus equipped with a liquid crystal display device as an electro-optical device of the present invention will be described.

  FIG. 10 is a perspective view of a mobile phone as an electronic device.

  As shown in FIG. 10, a mobile phone 2000 as an electronic apparatus according to the present embodiment includes the above-described liquid crystal display device 500 as a display unit. The mobile phone 2000 includes a display unit 2001. As described above, since the mobile phone 2000 as an electronic apparatus according to the present invention can include the liquid crystal display device 500 capable of improving the yield, the mobile phone 2000 as an electronic apparatus with good production efficiency can be provided. . Also, the electronic device is not particular about the mobile phone 2000. For example, a portable information device called a printer, a wristwatch, a NOTE-PC, a PDA, an electronic paper, a portable terminal device, a personal computer, a word processor, a digital still camera, It can be suitably used as an image display means for a vehicle-mounted monitor, a monitor direct-view digital video recorder, a car navigation device, an electronic notebook, a workstation, a video phone, a POS terminal, and the like. By doing so, the use of the liquid crystal display device 500 as an electro-optical device is expanded, and various electronic devices can be provided.

  The present invention has been described above with reference to preferred embodiments. However, the present invention is not limited to the above-described embodiments, and includes modifications as described below, as long as the object of the present invention can be achieved. It can be set to any other specific structure and shape.

(Modification)
In the above-described embodiment, the method of condensing the laser beam 45 is focused and irradiated while moving the condensing point in the thickness direction of the substrate P, but is not limited thereto. For example, as shown in FIG. 11, the laser beam 45 may be split into a plurality of beams by a lens 46 as a condensing element, which is a diffractive optical element, and irradiated onto the film 48 and the substrate P simultaneously at multiple points. In this way, the same effects as in the embodiment can be obtained, and the time required for forming the material altered portion 47 can be shortened, so that the processing efficiency can be improved.

Explanatory drawing for demonstrating the formation method of the material alteration part as a modified layer by a laser beam. Schematic of the laser processing apparatus in the embodiment. The block diagram of the control system of a laser processing apparatus. It is explanatory drawing for demonstrating the formation method of the film | membrane removal part in case dust does not adhere on a board | substrate, FIG. (A) is sectional drawing, (b) is an arrow of FIG. (A). Explanatory drawing seen from the direction. It is explanatory drawing for demonstrating the formation method of the film | membrane removal part in case dust has adhered on the board | substrate, Fig. (A) is sectional drawing, Fig. (B) is the arrow of Fig. (A). Explanatory drawing seen from the direction. It is a figure which shows the manufacturing method which cuts and divides | segments a board | substrate and forms a division | segmentation piece, A figure (a) is a figure which shows the formation process which forms a film | membrane in a board | substrate, A figure (b) is irradiated with a laser beam FIG. 4C is a diagram illustrating a formation process for forming a film-removed portion. FIG. 4C is a diagram illustrating a formation process for forming a material-modified portion by irradiating a laser beam. FIG. It is a figure which shows the detection process which detects this, and the figure (e) is a figure which shows a division | segmentation piece. The flowchart for demonstrating the manufacturing procedure which cut | disconnects and divides | segments a board | substrate and forms a division | segmentation piece. It is the schematic which shows the structure of the liquid crystal panel as a display apparatus, A figure (a) is a schematic plan view, A figure (b) is a schematic sectional drawing cut | disconnected along the AA line of Fig. (A) . 1 is an exploded perspective view of a liquid crystal display device as an electro-optical device. The perspective view of the mobile telephone as an electronic device. The figure which shows the example which divides | segments the laser beam in a modification into a several beam with a diffractive optical element, and irradiates multiple points simultaneously.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 ... TFT substrate, 10 ... Liquid crystal panel as a display device, 17 ... Multi-layered structure substrate, 45 ... Laser light, 46 ... Lens as a condensing element, 47 ... Material alteration part as a modified layer, 48 ... Film, 48a ... split film, 48b ... film residue, 49 ... film removal unit, 100 ... laser processing device, 101 ... laser light source, 107 ... stage, 112 ... imaging device, 120 ... main computer as control unit, 121 ... laser control unit, DESCRIPTION OF SYMBOLS 122 ... Lens control part, 123 ... Stage control part, 135 ... Image recognition part, 500 ... Liquid crystal display device as an electro-optical device, 2000 ... Cell-phone as an electronic device, F ... Stress, K ... Waste, P ... As a base | substrate Substrate, Q ... divided pieces.

Claims (13)

A method for manufacturing a substrate, comprising:
Forming a film on the substrate;
Irradiating the film with laser light to evaporate the film to form a film removal portion;
A step of further irradiating the laser beam so as to connect to the film removal portion, and forming a material altered portion on the substrate;
A film residue detection step of detecting a film residue of the film removal unit;
Applying stress to the substrate to form divided pieces;
A method for producing a substrate, comprising: In the manufacturing method of the base according to claim 1,
In the step of forming the film,
A method of manufacturing a substrate, wherein the film is formed on any one of the surfaces of the substrate. In the manufacturing method of the base | substrate of Claim 1 or Claim 2,
In the step of forming the film,
A method of manufacturing a substrate, wherein the material of the film is a material that absorbs the laser light. In the manufacturing method of the base according to any one of claims 1 to 3,
In the step of forming the film,
A method of manufacturing a substrate, wherein the material of the film is any one of a metal material and a resin material. In the manufacturing method of the base according to any one of claims 1 to 4,
In the step of forming the film removal portion,
The laser beam is either a YAG laser or a titanium sapphire laser,
A method of manufacturing a substrate, wherein the film removing portion is formed by irradiating the substrate with either the YAG laser or the titanium sapphire laser. In the manufacturing method of the base according to any one of claims 1 to 5,
In the film residue detection step,
The method for manufacturing a substrate, wherein the film residue detection method is an image recognition method for recognizing the film residue with an image. In the manufacturing method of the base according to any one of claims 1 to 6,
In the step of forming the material altered portion,
Branching the laser light into a plurality of beams by a diffractive optical element, irradiating the plurality of beams,
A method of manufacturing a substrate, wherein the material-affected portion is formed. In the manufacturing method of the base according to any one of claims 1 to 7,
In the step of forming the divided pieces,
A method of manufacturing a substrate, comprising applying the stress to one of bending stress or tensile stress to the substrate to form the divided pieces. In the manufacturing method of the base according to any one of claims 1 to 8,
In the step of forming the divided pieces,
A method of manufacturing a substrate, wherein the divided piece forming method divides the substrate after determining that the film residue does not exist in the film removal portion. A laser processing apparatus for irradiating a base with laser light to cut the base,
A condensing element for condensing laser light on the substrate;
A stage on which the substrate can be placed;
A stage control unit for controlling the stage;
A laser light source for irradiating the film on the substrate with the laser beam and forming a film removal portion on the film and a material alteration portion on the substrate;
A laser controller for controlling the laser light source;
An image recognition unit for recognizing the film residue of the film removal unit by an image;
A control unit for controlling the stage control unit, the laser control unit, and the image recognition unit;
The laser processing apparatus, wherein the control unit determines whether or not the substrate can be divided after the image recognition unit recognizes the film residue.   A method for manufacturing a TFT substrate, wherein the TFT substrate is formed by the method for manufacturing a substrate according to any one of claims 1 to 8.   A method for manufacturing a multilayer structure substrate, wherein the substrate is formed by the method for manufacturing a base according to any one of claims 1 to 8. A method for manufacturing a liquid crystal display device, comprising the substrate manufacturing method according to claim 1.

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