JP5113180B2 - 低暗電流撮像装置のアイソレーション方法 - Google Patents
低暗電流撮像装置のアイソレーション方法 Download PDFInfo
- Publication number
- JP5113180B2 JP5113180B2 JP2009533311A JP2009533311A JP5113180B2 JP 5113180 B2 JP5113180 B2 JP 5113180B2 JP 2009533311 A JP2009533311 A JP 2009533311A JP 2009533311 A JP2009533311 A JP 2009533311A JP 5113180 B2 JP5113180 B2 JP 5113180B2
- Authority
- JP
- Japan
- Prior art keywords
- trench
- mask
- photosensitive regions
- layer
- isolation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000002955 isolation Methods 0.000 title claims description 17
- 238000003384 imaging method Methods 0.000 title 1
- 238000002513 implantation Methods 0.000 claims description 16
- 238000000034 method Methods 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 10
- 239000000758 substrate Substances 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 21
- 229920002120 photoresistant polymer Polymers 0.000 description 15
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 10
- 239000000377 silicon dioxide Substances 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 5
- 239000007943 implant Substances 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1463—Pixel isolation structures
Description
Claims (3)
- イメージセンサの感光性領域間のシリコンアイソレーションインタフェースのパッシベーション層を形成する方法であって、
(a)間隔を離して後に形成される、入射光に応じて電荷を収集する複数の感光性領域を有する基板を用意すること、
(b)前記後に形成される感光性領域の間において、前記基板上に第1のマスクを形成し、前記第1のマスクに覆われていない領域をエッチングしてトレンチを形成すること、
(c)前記第1のマスクに覆われていない領域に不純物をインプラントして、前記トレンチをパッシベートすること、
(d)前記トレンチに誘電体を充填して、前記後に形成される感光性領域の間にアイソレーションを形成すること、
(e)前記トレンチ周辺の表面コーナーのパッシベーションインプランテーションが可能となるように、前記後に形成される感光性領域を覆う一方で、前記トレンチ周辺の表面コーナーを覆わない第2のマスクを形成すること、および
(f)前記誘電体及び前記第2のマスクで覆われていない領域に不純物をインプラントして、前記トレンチ周辺の表面コーナーをパッシベートすること、
を含む方法。 - 請求項1に記載の方法であって、
ステップ(c)は、前記トレンチの底面および側面をパッシベートすることを含む、方法。 - 請求項1に記載の方法であって、
前記誘電体は、酸化物である、方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/550,137 US7521278B2 (en) | 2006-10-17 | 2006-10-17 | Isolation method for low dark current imager |
US11/550,137 | 2006-10-17 | ||
PCT/US2007/021542 WO2008048436A2 (en) | 2006-10-17 | 2007-10-09 | Isolation method for low dark current imager |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010507249A JP2010507249A (ja) | 2010-03-04 |
JP5113180B2 true JP5113180B2 (ja) | 2013-01-09 |
Family
ID=39185977
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009533311A Active JP5113180B2 (ja) | 2006-10-17 | 2007-10-09 | 低暗電流撮像装置のアイソレーション方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7521278B2 (ja) |
EP (1) | EP2082427A2 (ja) |
JP (1) | JP5113180B2 (ja) |
KR (1) | KR101392540B1 (ja) |
CN (1) | CN101529594B (ja) |
TW (1) | TW200832691A (ja) |
WO (1) | WO2008048436A2 (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9076921B2 (en) * | 2008-07-18 | 2015-07-07 | Massachusetts Institute Of Technology | Dark current reduction for large area photodiodes |
US20100140668A1 (en) * | 2008-12-08 | 2010-06-10 | Stevens Eric G | Shallow trench isolation regions in image sensors |
US20120032212A1 (en) * | 2010-08-06 | 2012-02-09 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of light emitting diode sidewall passivation |
JP6268836B2 (ja) * | 2013-09-12 | 2018-01-31 | セイコーエプソン株式会社 | 発光装置および電子機器 |
US9847363B2 (en) * | 2015-10-20 | 2017-12-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device with a radiation sensing region and method for forming the same |
CN108259792A (zh) * | 2018-01-16 | 2018-07-06 | 德淮半导体有限公司 | 图像传感器单元 |
Family Cites Families (24)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5891787A (en) | 1997-09-04 | 1999-04-06 | Advanced Micro Devices, Inc. | Semiconductor fabrication employing implantation of excess atoms at the edges of a trench isolation structure |
US5915195A (en) * | 1997-11-25 | 1999-06-22 | Advanced Micro Devices, Inc. | Ion implantation process to improve the gate oxide quality at the edge of a shallow trench isolation structure |
US6177333B1 (en) * | 1999-01-14 | 2001-01-23 | Micron Technology, Inc. | Method for making a trench isolation for semiconductor devices |
JP4604296B2 (ja) * | 1999-02-09 | 2011-01-05 | ソニー株式会社 | 固体撮像装置及びその製造方法 |
US6888214B2 (en) * | 2002-11-12 | 2005-05-03 | Micron Technology, Inc. | Isolation techniques for reducing dark current in CMOS image sensors |
KR100523668B1 (ko) * | 2002-12-30 | 2005-10-24 | 매그나칩 반도체 유한회사 | 질화막과 수소어닐공정을 이용하여 암전류를 감소시킨시모스 이미지센서의 제조방법 |
JP3729814B2 (ja) | 2003-02-21 | 2005-12-21 | 松下電器産業株式会社 | 固体撮像装置 |
US6949445B2 (en) * | 2003-03-12 | 2005-09-27 | Micron Technology, Inc. | Method of forming angled implant for trench isolation |
US7102184B2 (en) * | 2003-06-16 | 2006-09-05 | Micron Technology, Inc. | Image device and photodiode structure |
KR100950749B1 (ko) * | 2003-07-09 | 2010-04-05 | 매그나칩 반도체 유한회사 | 반도체소자의 소자분리막 형성방법 |
US7232712B2 (en) * | 2003-10-28 | 2007-06-19 | Dongbu Electronics Co., Ltd. | CMOS image sensor and method for fabricating the same |
KR100619396B1 (ko) * | 2003-12-31 | 2006-09-11 | 동부일렉트로닉스 주식회사 | 시모스 이미지 센서 및 그 제조방법 |
KR100698069B1 (ko) * | 2004-07-01 | 2007-03-23 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서의 제조방법 |
US7262110B2 (en) * | 2004-08-23 | 2007-08-28 | Micron Technology, Inc. | Trench isolation structure and method of formation |
KR100659382B1 (ko) * | 2004-08-06 | 2006-12-19 | 삼성전자주식회사 | 이미지 센서 및 그 제조 방법 |
US7098067B2 (en) * | 2004-12-13 | 2006-08-29 | International Business Machines Corporation | Masked sidewall implant for image sensor |
US7241671B2 (en) | 2004-12-29 | 2007-07-10 | Dongbu Electronics Co., Ltd. | CMOS image sensor and method for fabricating the same |
US7141836B1 (en) * | 2005-05-31 | 2006-11-28 | International Business Machines Corporation | Pixel sensor having doped isolation structure sidewall |
KR100720503B1 (ko) * | 2005-06-07 | 2007-05-22 | 동부일렉트로닉스 주식회사 | 씨모스 이미지 센서 및 그 제조방법 |
JP5320659B2 (ja) * | 2005-12-05 | 2013-10-23 | ソニー株式会社 | 固体撮像装置 |
KR100761829B1 (ko) * | 2005-12-15 | 2007-09-28 | 삼성전자주식회사 | 반도체 소자, 시모스 이미지 센서, 반도체 소자의 제조방법및 시모스 이미지 센서의 제조방법 |
JP2007288136A (ja) * | 2006-03-24 | 2007-11-01 | Matsushita Electric Ind Co Ltd | 固体撮像装置およびその製造方法 |
KR100769146B1 (ko) * | 2006-08-17 | 2007-10-22 | 동부일렉트로닉스 주식회사 | 전기적 특성을 향상시키는 반도체 소자 및 그 제조 방법 |
US7879639B2 (en) * | 2007-04-13 | 2011-02-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and device to reduce dark current in image sensors |
-
2006
- 2006-10-17 US US11/550,137 patent/US7521278B2/en active Active
-
2007
- 2007-10-09 JP JP2009533311A patent/JP5113180B2/ja active Active
- 2007-10-09 WO PCT/US2007/021542 patent/WO2008048436A2/en active Application Filing
- 2007-10-09 EP EP07852600A patent/EP2082427A2/en not_active Withdrawn
- 2007-10-09 KR KR1020097007820A patent/KR101392540B1/ko active IP Right Grant
- 2007-10-09 CN CN2007800388886A patent/CN101529594B/zh active Active
- 2007-10-16 TW TW096138738A patent/TW200832691A/zh unknown
Also Published As
Publication number | Publication date |
---|---|
JP2010507249A (ja) | 2010-03-04 |
KR101392540B1 (ko) | 2014-05-07 |
TW200832691A (en) | 2008-08-01 |
KR20090080943A (ko) | 2009-07-27 |
CN101529594B (zh) | 2011-08-24 |
EP2082427A2 (en) | 2009-07-29 |
WO2008048436A2 (en) | 2008-04-24 |
US20080090321A1 (en) | 2008-04-17 |
WO2008048436A3 (en) | 2008-07-31 |
CN101529594A (zh) | 2009-09-09 |
US7521278B2 (en) | 2009-04-21 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1691418B1 (en) | Image sensor using deep trench isolation | |
JP5281008B2 (ja) | 半導体基板に形成された素子を分離する方法 | |
KR100720503B1 (ko) | 씨모스 이미지 센서 및 그 제조방법 | |
JP5113180B2 (ja) | 低暗電流撮像装置のアイソレーション方法 | |
US7732246B2 (en) | Method for fabricating vertical CMOS image sensor | |
JP2011086709A (ja) | 固体撮像装置及びその製造方法 | |
US11869761B2 (en) | Back-side deep trench isolation structure for image sensor | |
US8440540B2 (en) | Method for doping a selected portion of a device | |
US11705475B2 (en) | Method of forming shallow trench isolation (STI) structure for suppressing dark current | |
US20070045794A1 (en) | Buried photodiode for image sensor with shallow trench isolation technology | |
CN114725147B (zh) | 一种图像传感器及其制造方法 | |
US6323054B1 (en) | Lateral P-I-N photodiode element with high quantum efficiency for a CMOS image sensor | |
CN112928059A (zh) | 浅沟槽隔离的形成方法 | |
US20080070420A1 (en) | Method of fabricating image sensor | |
CN109103211A (zh) | 背照式图像传感器及其形成方法 | |
KR100328265B1 (ko) | 반도체 소자 분리를 위한 트렌치 제조 방법 | |
JP4826067B2 (ja) | 固体撮像装置の製造方法および半導体装置の製造方法 | |
KR100521449B1 (ko) | 반도체 소자의 소자 분리막 및 그의 제조 방법 | |
JP2011146747A (ja) | 固体撮像装置の製造方法および半導体装置の製造方法 | |
JP2007043053A (ja) | 固体撮像装置 | |
JP2009105232A (ja) | 固体撮像装置の製造方法 | |
JP2005260160A (ja) | 固体撮像素子の製造方法、タングステン層のエッチング方法 | |
KR20100030813A (ko) | 씨모스 이미지 센서의 제조 방법 | |
KR20040061171A (ko) | 반도체 장치의 소자 분리막 형성방법 | |
KR20070046372A (ko) | 반도체 소자의 소자분리막 형성방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20101004 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110725 |
|
A711 | Notification of change in applicant |
Free format text: JAPANESE INTERMEDIATE CODE: A711 Effective date: 20110725 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120605 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120607 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120904 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120925 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20121011 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20151019 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5113180 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |