JP5107597B2 - プラズマ処理装置 - Google Patents

プラズマ処理装置 Download PDF

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Publication number
JP5107597B2
JP5107597B2 JP2007073575A JP2007073575A JP5107597B2 JP 5107597 B2 JP5107597 B2 JP 5107597B2 JP 2007073575 A JP2007073575 A JP 2007073575A JP 2007073575 A JP2007073575 A JP 2007073575A JP 5107597 B2 JP5107597 B2 JP 5107597B2
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Japan
Prior art keywords
probe
plasma
frequency
frequency current
processing apparatus
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Expired - Fee Related
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JP2007073575A
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Japanese (ja)
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JP2007294909A5 (enExample
JP2007294909A (ja
Inventor
陽平 山澤
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2007073575A priority Critical patent/JP5107597B2/ja
Priority to US11/691,700 priority patent/US7655110B2/en
Publication of JP2007294909A publication Critical patent/JP2007294909A/ja
Publication of JP2007294909A5 publication Critical patent/JP2007294909A5/ja
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  • Plasma Technology (AREA)
  • Chemical Vapour Deposition (AREA)
  • Drying Of Semiconductors (AREA)
JP2007073575A 2006-03-29 2007-03-20 プラズマ処理装置 Expired - Fee Related JP5107597B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2007073575A JP5107597B2 (ja) 2006-03-29 2007-03-20 プラズマ処理装置
US11/691,700 US7655110B2 (en) 2006-03-29 2007-03-27 Plasma processing apparatus

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2006090243 2006-03-29
JP2006090243 2006-03-29
JP2007073575A JP5107597B2 (ja) 2006-03-29 2007-03-20 プラズマ処理装置

Publications (3)

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JP2007294909A JP2007294909A (ja) 2007-11-08
JP2007294909A5 JP2007294909A5 (enExample) 2010-04-30
JP5107597B2 true JP5107597B2 (ja) 2012-12-26

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ID=38765162

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JP2007073575A Expired - Fee Related JP5107597B2 (ja) 2006-03-29 2007-03-20 プラズマ処理装置

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JP (1) JP5107597B2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4727479B2 (ja) * 2006-03-29 2011-07-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ内の高周波電流量の測定方法
JPWO2009110366A1 (ja) * 2008-03-07 2011-07-14 東京エレクトロン株式会社 プラズマ処理装置
JP5878382B2 (ja) * 2012-01-24 2016-03-08 株式会社アルバック シリコンエッチング方法
KR101333104B1 (ko) 2012-09-04 2013-11-26 이도형 반도체 박막 증착 장비용 히터 모니터링 시스템
JP6899693B2 (ja) 2017-04-14 2021-07-07 東京エレクトロン株式会社 プラズマ処理装置及び制御方法
KR102873665B1 (ko) * 2020-10-15 2025-10-17 에이에스엠 아이피 홀딩 비.브이. 반도체 소자의 제조 방법, 및 ether-cat을 사용하는 기판 처리 장치

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4590031B2 (ja) * 2000-07-26 2010-12-01 東京エレクトロン株式会社 被処理体の載置機構
JP4030766B2 (ja) * 2002-01-30 2008-01-09 アルプス電気株式会社 プラズマ処理装置
JP3923323B2 (ja) * 2002-01-30 2007-05-30 アルプス電気株式会社 プラズマ処理装置及びプラズマ処理方法
JP2004152999A (ja) * 2002-10-30 2004-05-27 Matsushita Electric Ind Co Ltd プラズマ処理方法およびプラズマ処理装置
WO2004064460A1 (ja) * 2003-01-16 2004-07-29 Japan Science And Technology Agency 高周波電力供給装置およびプラズマ発生装置
JP4448335B2 (ja) * 2004-01-08 2010-04-07 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP2005277397A (ja) * 2004-02-26 2005-10-06 Tokyo Electron Ltd プラズマ処理装置
JP4727479B2 (ja) * 2006-03-29 2011-07-20 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ内の高周波電流量の測定方法

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JP2007294909A (ja) 2007-11-08

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