JP5103731B2 - Mold package - Google Patents

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JP5103731B2
JP5103731B2 JP2005357517A JP2005357517A JP5103731B2 JP 5103731 B2 JP5103731 B2 JP 5103731B2 JP 2005357517 A JP2005357517 A JP 2005357517A JP 2005357517 A JP2005357517 A JP 2005357517A JP 5103731 B2 JP5103731 B2 JP 5103731B2
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lead electrode
semiconductor chip
film lead
electrode
thick film
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JP2007165442A (en
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光一 藤田
洋二 丸山
健司 樋野
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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Priority to JP2005357517A priority Critical patent/JP5103731B2/en
Priority to US11/451,372 priority patent/US8569871B2/en
Priority to CNB2006101425856A priority patent/CN100435328C/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H01L23/3135—Double encapsulation or coating and encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49537—Plurality of lead frames mounted in one device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H01L23/49551—Cross section geometry characterised by bent parts
    • H—ELECTRICITY
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H—ELECTRICITY
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49171—Fan-out arrangements
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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
    • H01L23/64—Impedance arrangements
    • H01L23/66—High-frequency adaptations
    • H—ELECTRICITY
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1532—Connection portion the connection portion being formed on the die mounting surface of the substrate
    • H—ELECTRICITY
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
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    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/30107—Inductance

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

本発明は、高周波又は高出力で動作するモールドパッケージに関し、特に放熱性及び高周波特性を向上させ、電気的接地と放熱を分離して行うことができるモールドパッケージに関するものである。   The present invention relates to a mold package that operates at high frequency or high output, and more particularly to a mold package that improves heat dissipation and high frequency characteristics and can perform electrical grounding and heat dissipation separately.

高周波又は高出力で動作する従来のモールドパッケージの一例を図１２に示す（例えば、特許文献１参照）。図示のように、薄膜リード電極５１を下方に曲げることで、入力・出力リード電極５２が構成されている。また、薄膜リード電極５１を上方に曲げてダイパッド部５３が構成され、半導体チップ５４が半田等で接着されている。半導体チップ５４は、金属ワイヤ５６を介して入力・出力リード電極５２に接続されている。これらの半導体チップ５４及び金属ワイヤ５６は、プラスチック等のモールド材５７により封止されている。そして、ダイパッド部５３上でリード電極５１を露出させることで、接地電極５５が構成されている。これにより、接地インダクタンスを低減させ、放熱性を向上させている。   An example of a conventional mold package that operates at high frequency or high output is shown in FIG. 12 (see, for example, Patent Document 1). As shown, the input / output lead electrode 52 is configured by bending the thin film lead electrode 51 downward. The thin film lead electrode 51 is bent upward to form a die pad portion 53, and the semiconductor chip 54 is bonded with solder or the like. The semiconductor chip 54 is connected to the input / output lead electrode 52 via a metal wire 56. The semiconductor chip 54 and the metal wire 56 are sealed with a molding material 57 such as plastic. The ground electrode 55 is formed by exposing the lead electrode 51 on the die pad portion 53. This reduces ground inductance and improves heat dissipation.

上記の例と同様に薄膜リード電極５１を用いた従来のモールドパッケージの他の例を図１３に示す。図示のように、入力・出力リード電極５２と接地電極５５とが同一平面に形成されている。   FIG. 13 shows another example of a conventional mold package using the thin film lead electrode 51 as in the above example. As shown, the input / output lead electrode 52 and the ground electrode 55 are formed on the same plane.

しかし、これらのモールドパッケージでは、リード電極の厚さが通常０．２ｍｍ程度と薄く熱容量が小さいため、放熱性が低く、半導体チップの温度上昇を防ぐために熱容量の大きな放熱板（ヒートシンク）を必要としていた。また、寄生インダクタンス及び寄生容量が大きくなるので高周波特性を向上させることができなかった。   However, in these mold packages, the thickness of the lead electrode is usually about 0.2 mm and the heat capacity is small, so the heat dissipation is low, and a heat sink (heat sink) with a large heat capacity is required to prevent the temperature rise of the semiconductor chip. It was. Moreover, since the parasitic inductance and the parasitic capacitance are increased, the high frequency characteristics cannot be improved.

そこで、放熱性及び高周波特性を向上させた従来のモールドパッケージの一例の断面図を図１４に示し、上面図を図１５に示す（例えば、特許文献２参照）。図示のように、厚膜リード電極からなる接地電極５８に半導体チップ５４をダイボンドし、接地電極５８の上面をモールド材５７より露出し、放熱性を向上させている。   Therefore, FIG. 14 shows a cross-sectional view of an example of a conventional mold package with improved heat dissipation and high-frequency characteristics, and FIG. 15 shows a top view thereof (see, for example, Patent Document 2). As shown in the figure, the semiconductor chip 54 is die-bonded to a ground electrode 58 made of a thick film lead electrode, and the upper surface of the ground electrode 58 is exposed from the molding material 57 to improve heat dissipation.

放熱性及び高周波特性を向上させた従来のモールドパッケージの他の例を図１６に示す（例えば、特許文献３参照）。図示のように、薄膜リード電極５９の下面に、個別に切り出した厚膜の放熱電極６０を接着し、放熱性を向上させている。   Another example of a conventional mold package with improved heat dissipation and high frequency characteristics is shown in FIG. 16 (see, for example, Patent Document 3). As shown in the figure, a thick-film heat radiation electrode 60 cut out individually is bonded to the lower surface of the thin film lead electrode 59 to improve heat dissipation.

特開平８−２１３５３６号公報JP-A-8-213536 特開平４−１７４５４７号公報JP-A-4-174547 特開平６−６１３９６号公報JP-A-6-61396

しかし、従来のモールドパッケージでは、電気的接地と放熱を分離して行うことが困難であった。   However, in the conventional mold package, it is difficult to separate electrical grounding and heat dissipation.

本発明は、上述のような課題を解決するためになされたもので、その目的は、放熱性及び高周波特性を向上させ、電気的接地と放熱を分離して行うことができるモールドパッケージを得るものである。   The present invention has been made to solve the above-described problems, and its object is to improve the heat dissipation and high-frequency characteristics and to obtain a mold package capable of performing electrical grounding and heat dissipation separately. It is.

本発明に係るモールドパッケージは、半導体チップと、半導体チップがダイボンドされた厚膜リード電極と、厚膜リード電極よりも薄い薄膜リード電極と、半導体チップと薄膜リード電極とを電気的に接続するワイヤと、半導体チップ及びワイヤを封止するモールド材とを有し、厚膜リード電極の下面の一部は、パッケージ下面で露出して放熱電極として用いられ、薄膜リード電極の上面の一部がパッケージ上面で露出して入力・出力電極として用いられ、厚膜リード電極の上面の一部がパッケージ上面で露出して接地電極として用いられ、厚膜リード電極は、銅系材質を用いて作成され、半導体チップがダイボンドされる領域及びその近傍にメッキ層が形成され、厚膜リード電極の表面に酸化銅被膜が形成され、半導体チップがダイボンドされる領域の近傍においてメッキ層の表面に酸化銅被膜が析出している。本発明のその他の特徴は以下に明らかにする。 A mold package according to the present invention includes a semiconductor chip, a thick film lead electrode to which the semiconductor chip is die-bonded, a thin film lead electrode thinner than the thick film lead electrode, and a wire for electrically connecting the semiconductor chip and the thin film lead electrode. And a molding material for sealing the semiconductor chip and the wire, a part of the lower surface of the thick film lead electrode is exposed on the lower surface of the package and used as a heat dissipation electrode, and a part of the upper surface of the thin film lead electrode is packaged Exposed on the upper surface and used as an input / output electrode, a part of the upper surface of the thick film lead electrode is exposed on the package upper surface and used as a ground electrode, and the thick film lead electrode is made using a copper-based material, A plating layer is formed in and near the area where the semiconductor chip is die-bonded, a copper oxide film is formed on the surface of the thick lead electrode, and the semiconductor chip is die-bonded Copper oxide film is deposited on the surface of the plating layer in the vicinity of the area. Other features of the present invention will become apparent below.

本発明により、放熱性及び高周波特性を向上させ、電気的接地と放熱を分離して行うことができる。   According to the present invention, heat dissipation and high frequency characteristics can be improved, and electrical grounding and heat dissipation can be performed separately.

実施の形態１．
図１は、本実施の形態に係るモールドパッケージを示す斜視図であり、図２は図１の上下を反転させたものである。図示のように、半導体チップ１１は、厚さ０．４〜１．０ｍｍ程度の厚膜リード電極１２の中央部を折り曲げた凹部に半田等でダイボンドされている。そして 厚さ０．０５〜０．２ｍｍ程度の薄膜リード電極１３が半導体チップ１１に近づくよう下方に曲げられ、金属ワイヤ１４により半導体チップ１１と電気的に接続されている。これらの半導体チップ１１及び金属ワイヤ１４がプラスチック等のモールド材１５により封止されて、モールドパッケージ１０が構成されている。 Embodiment 1 FIG.
FIG. 1 is a perspective view showing a mold package according to the present embodiment, and FIG. 2 is an upside down view of FIG. As shown in the figure, the semiconductor chip 11 is die-bonded with solder or the like to a concave portion obtained by bending the central portion of a thick film lead electrode 12 having a thickness of about 0.4 to 1.0 mm. A thin film lead electrode 13 having a thickness of about 0.05 to 0.2 mm is bent downward so as to approach the semiconductor chip 11 and is electrically connected to the semiconductor chip 11 by a metal wire 14. The semiconductor chip 11 and the metal wire 14 are sealed with a molding material 15 such as plastic to constitute the mold package 10.

このモールドパッケージの上面図を図３に示し、下面図を図４に示し、側面図を図５に示す。図示のように、厚膜リード電極１２の上面の一部はモールドパッケージ１０上面で露出して接地電極１６として用いられる。また、厚膜リード電極１２の下面の一部はモールドパッケージ１０下面で露出して、半導体チップ１１で発生した熱を放熱する放熱電極１７として用いられる。そして、薄膜リード電極１３の上面の一部はモールドパッケージ１０上面で露出して入力・出力リード電極１８として用いられる。   A top view of this mold package is shown in FIG. 3, a bottom view is shown in FIG. 4, and a side view is shown in FIG. As shown, a part of the upper surface of the thick film lead electrode 12 is exposed on the upper surface of the mold package 10 and used as the ground electrode 16. Further, a part of the lower surface of the thick film lead electrode 12 is exposed on the lower surface of the mold package 10 and used as a heat radiation electrode 17 for radiating heat generated in the semiconductor chip 11. A part of the upper surface of the thin film lead electrode 13 is exposed on the upper surface of the mold package 10 and used as the input / output lead electrode 18.

なお、このモールドパッケージは図２の状態で使用される。そして、放熱電極１７を電気的に接地させず、放熱のみ実施させるために、放熱板（不図示）と放熱電極１７との間に、絶縁体でできた放熱シート１９が挿入される。   This mold package is used in the state shown in FIG. In order to perform only heat radiation without electrically grounding the heat radiation electrode 17, a heat radiation sheet 19 made of an insulator is inserted between the heat radiation plate (not shown) and the heat radiation electrode 17.

次に、リードフレーム状態の厚膜リード電極１２及び薄膜リード電極１３について説明する。図６はリードフレーム状態の厚膜リード電極及び薄膜リード電極を示す上面図であり、図７は図６のａ−ａ´での断面図であり、図８は図６のｂ−ｂ´での断面図である。   Next, the thick film lead electrode 12 and the thin film lead electrode 13 in the lead frame state will be described. 6 is a top view showing the thick film lead electrode and the thin film lead electrode in the lead frame state, FIG. 7 is a cross-sectional view taken along the line aa ′ of FIG. 6, and FIG. 8 is a cross-sectional view taken along the line bb ′ of FIG. FIG.

リードフレーム状態の厚膜リード電極２１及び薄膜リード電極２２は、銅（Ｃｕ）系材質を用いて作成され、両リードフレームは半導体チップ１１を形成しない位置に設けられたかしめ部２３により結合されている。そして、厚膜リード電極２１は凹字型に曲げられ、薄膜リード電極２２は、半導体チップ１１とのボンデイング距離が最良となるように下方に曲げられている。   The thick film lead electrode 21 and the thin film lead electrode 22 in the lead frame state are formed using a copper (Cu) -based material, and both the lead frames are coupled by a caulking portion 23 provided at a position where the semiconductor chip 11 is not formed. Yes. The thick film lead electrode 21 is bent in a concave shape, and the thin film lead electrode 22 is bent downward so that the bonding distance with the semiconductor chip 11 is the best.

また、半導体チップ１１が半田等でダイボンドされる領域である厚膜リード電極２１の凹部に、銀（Ａｇ）等によりメッキ層２４が形成されている。これにより、ダイボンド時の熱や半導体チップ１１の動作時の発熱によって半導体チップ１１に加わる熱ストレスを緩和することができる。例えば、ダイボンドに銀（Ａｇ）系半田を用いる場合、銀（Ａｇ）によりメッキ層２４が形成される。   In addition, a plating layer 24 is formed of silver (Ag) or the like in a concave portion of the thick film lead electrode 21 which is a region where the semiconductor chip 11 is die-bonded with solder or the like. Thereby, the thermal stress applied to the semiconductor chip 11 due to heat at the time of die bonding and heat generation at the time of operation of the semiconductor chip 11 can be alleviated. For example, when silver (Ag) solder is used for die bonding, the plating layer 24 is formed of silver (Ag).

また、厚膜リード電極２１には、半導体チップ１１の搭載部の周囲にストッパー溝２５が設けられている。これにより、図９に示すように、半導体チップ１１の表面を覆うように樹脂系のコート材２６を塗布した際に、コート材２６が厚膜リード電極２１側面や下面に流れ出るのを防ぐことができる。   The thick film lead electrode 21 is provided with a stopper groove 25 around the mounting portion of the semiconductor chip 11. As a result, as shown in FIG. 9, when the resin coating material 26 is applied so as to cover the surface of the semiconductor chip 11, it is possible to prevent the coating material 26 from flowing out to the side surface or the lower surface of the thick film lead electrode 21. it can.

図１０は、図８の厚膜リード電極の曲げ部分の拡大図である。図示のように、厚膜リード電極２１は、パッケージの上下面近傍において、上下面に対して垂直となるように多段階に曲げられている。これにより、後にモールド材１５により封止した際に、厚膜リード電極１２の上下面の一部が露出した接地電極１６又は放熱電極１７上に不要なモールド材１５（バリ）が固着するのを防止することができる。   FIG. 10 is an enlarged view of a bent portion of the thick film lead electrode of FIG. As shown in the figure, the thick film lead electrode 21 is bent in multiple stages so as to be perpendicular to the upper and lower surfaces in the vicinity of the upper and lower surfaces of the package. As a result, when sealing with the molding material 15 later, the unnecessary molding material 15 (burr) is fixed on the ground electrode 16 or the heat radiation electrode 17 where a part of the upper and lower surfaces of the thick film lead electrode 12 is exposed. Can be prevented.

上記のように、接地電極１６を厚膜リード電極１２により形成することで、放熱電極１７を厚膜リード電極１２により形成することで、放熱性を向上させ、放熱電極１７と接触させる放熱板の熱容量が低い場合や、接触が不充分な場合でも、半導体チップの温度上昇を防ぐことができる。   As described above, the ground electrode 16 is formed of the thick film lead electrode 12, and the heat dissipation electrode 17 is formed of the thick film lead electrode 12. Even when the heat capacity is low or the contact is insufficient, the temperature rise of the semiconductor chip can be prevented.

また、接地電極１６を薄膜リード電極１３により形成した場合に比べて、接地インダクタンス、接地抵抗を低減することができ、より高周波での動作が可能となる。   Further, compared to the case where the ground electrode 16 is formed by the thin film lead electrode 13, the ground inductance and the ground resistance can be reduced, and operation at a higher frequency is possible.

また、接地電極１６をパッケージ上面に形成し、放熱電極１７をパッケージ下面に形成することで、電気的接地と放熱を分離して行うことができる。   Further, by forming the ground electrode 16 on the upper surface of the package and forming the heat radiation electrode 17 on the lower surface of the package, the electrical grounding and the heat radiation can be performed separately.

なお、モールドパッケージ１０上面で露出した接地電極１６の形状は、コの字又はＵ字とするのが好ましい。これにより、厚膜リード電極１２のリードフレームを切断（タイバーカット）する際の切断面積を小さくすることができるため、従来の薄膜リード電極を切断するのと同様の条件で切断することができる。また、切り込み部分にモールド材が充填されるのでモールド材と厚膜電極とのハクリ強度が増す。   The shape of the ground electrode 16 exposed on the upper surface of the mold package 10 is preferably U-shaped or U-shaped. Thereby, since the cutting area when cutting the lead frame of the thick film lead electrode 12 (tie bar cut) can be reduced, the cutting can be performed under the same conditions as those for cutting the conventional thin film lead electrode. Further, since the molding material is filled in the cut portion, the peeling strength between the molding material and the thick film electrode is increased.

また、ダイボンド等の高温処理時に、厚膜リード電極２１及び薄膜リード電極２２ｍｐ表面を酸化して酸化銅被膜を形成するのが好ましい。酸化銅はモールド材との密着性が良好なため、リードフレームとモールド材の界面からの水分の侵入を阻止することができ、半導体チップの耐湿性を向上させることができる。   Further, it is preferable to oxidize the surfaces of the thick film lead electrode 21 and the thin film lead electrode 22mp to form a copper oxide film during high temperature processing such as die bonding. Since copper oxide has good adhesion to the mold material, it is possible to prevent moisture from entering from the interface between the lead frame and the mold material, and to improve the moisture resistance of the semiconductor chip.

また、本実施の形態では入力・出力電極が各一本の場合について説明したが、多数の電極を有するパッケージにおいても同等の効果を奏する。また、半導体チップの種類は特に制限はなく、シリコン基板やＧａＡｓ、ＩｎＰ等の化合物基板の何れの半導体チップでも同等の効果を奏する。   In this embodiment, the case where there is one input / output electrode has been described, but the same effect can be obtained even in a package having a large number of electrodes. The type of the semiconductor chip is not particularly limited, and any semiconductor chip such as a silicon substrate or a compound substrate such as GaAs or InP has the same effect.

実施の形態２．
図１１は、本発明の実施の形態２に係るモールドパッケージを示す断面図である。図１〜１０と同様の構成要素には同じ番号を付し、説明を省略する。 Embodiment 2. FIG.
FIG. 11 is a cross-sectional view showing a mold package according to Embodiment 2 of the present invention. Constituent elements similar to those in FIGS.

本実施の形態に係るモールドパッケージでは、ダイボンド領域の銀（Ａｇ）等によるメッキ層２４上に酸化銅被膜２７が析出している。これにより、半導体チップ１１近傍での厚膜リード電極２１とモールド材１５との密着性が向上するため、半導体チップ１１の信頼性はさらに向上する。   In the mold package according to the present embodiment, a copper oxide film 27 is deposited on the plating layer 24 of silver (Ag) or the like in the die bond region. As a result, the adhesion between the thick film lead electrode 21 and the molding material 15 in the vicinity of the semiconductor chip 11 is improved, so that the reliability of the semiconductor chip 11 is further improved.

メッキ層２４上に酸化銅被膜２７を析出させる方法として、窒素（Ｎ２）等の不活性ガスの比率が高い雰囲気下で厚膜リード電極２１表面を酸化して、厚膜リード電極２１表面で形成された酸化銅をメッキ層２４に拡散させて、メッキ層２４表面に析出させる方法がある。 As a method of depositing the copper oxide film 27 on the plated layer 24, the surface of the thick film lead electrode 21 is oxidized in an atmosphere having a high ratio of inert gas such as nitrogen (N 2 ), and the surface of the thick film lead electrode 21 is oxidized. There is a method in which the formed copper oxide is diffused in the plating layer 24 and deposited on the surface of the plating layer 24.

本発明の実施の形態に係るモールドパッケージを示す斜視図である。It is a perspective view which shows the mold package which concerns on embodiment of this invention. 図１の上下を反転させたものである。It is the upside down of FIG. 本発明の実施の形態に係るモールドパッケージを示す上面図である。It is a top view which shows the mold package which concerns on embodiment of this invention. 本発明の実施の形態に係るモールドパッケージを示す下面図である。It is a bottom view which shows the mold package which concerns on embodiment of this invention. 本発明の実施の形態に係るモールドパッケージを示す側面図である。It is a side view which shows the mold package which concerns on embodiment of this invention. リードフレーム状態の厚膜リード電極及び薄膜リード電極を示す上面図である。It is a top view which shows the thick film lead electrode and thin film lead electrode of a lead frame state. 図６のａ−ａ´での断面図である。It is sectional drawing in aa 'of FIG. 図６のｂ−ｂ´での断面図である。It is sectional drawing in bb 'of FIG. 半導体チップの表面を覆うようにコート材を塗布した状態を示す断面図である。It is sectional drawing which shows the state which apply | coated the coating material so that the surface of a semiconductor chip may be covered. 図８の厚膜リード電極の曲げ部分の拡大図である。It is an enlarged view of the bending part of the thick film lead electrode of FIG. 本発明の実施の形態２に係るモールドパッケージを示す断面図である。It is sectional drawing which shows the mold package which concerns on Embodiment 2 of this invention. 従来のモールドパッケージの一例を示す断面図である。It is sectional drawing which shows an example of the conventional mold package. 従来のモールドパッケージの他の例を示す断面図である。It is sectional drawing which shows the other example of the conventional mold package. 放熱性を向上させた従来のモールドパッケージの一例を示す断面図である。It is sectional drawing which shows an example of the conventional mold package which improved heat dissipation. 放熱性を向上させた従来のモールドパッケージの一例を示す上面図である。It is a top view which shows an example of the conventional mold package which improved heat dissipation. 放熱性を向上させた従来のモールドパッケージの他の例を示す断面図である。It is sectional drawing which shows the other example of the conventional mold package which improved heat dissipation.

符号の説明Explanation of symbols

１０ モールドパッケージ
１１ 半導体チップ
１２，２１ 厚膜リード電極
１３，２２ 薄膜リード電極
１４ 金属ワイヤ
１５ モールド材
１６ 接地電極
１７ 放熱電極
１８ 入力・出力リード電極
２４ メッキ層
２５ ストッパー溝
２６ コート材
２７ 酸化銅被膜 DESCRIPTION OF SYMBOLS 10 Mold package 11 Semiconductor chip 12, 21 Thick film lead electrode 13, 22 Thin film lead electrode 14 Metal wire 15 Mold material 16 Ground electrode 17 Radiation electrode 18 Input / output lead electrode 24 Plating layer 25 Stopper groove 26 Coating material 27 Copper oxide film

Claims (6)

半導体チップと、
前記半導体チップがダイボンドされた厚膜リード電極と、
前記厚膜リード電極よりも薄い薄膜リード電極と、
前記半導体チップと前記薄膜リード電極とを電気的に接続するワイヤと、
前記半導体チップ及び前記ワイヤを封止するモールド材とを有し、
前記厚膜リード電極の下面の一部は、パッケージ下面で露出して放熱電極として用いられ、
前記薄膜リード電極の上面の一部がパッケージ上面で露出して入力・出力電極として用いられ、
前記厚膜リード電極の上面の一部がパッケージ上面で露出して接地電極として用いられ、
前記厚膜リード電極は、銅系材質を用いて作成され、前記半導体チップがダイボンドされる領域及びその近傍にメッキ層が形成され、
前記厚膜リード電極の表面に酸化銅被膜が形成され、前記半導体チップがダイボンドされる領域の近傍において前記メッキ層の表面に前記酸化銅被膜が析出していることを特徴とするモールドパッケージ。 A semiconductor chip;
A thick film lead electrode die bonded to the semiconductor chip;
A thin film lead electrode thinner than the thick film lead electrode;
A wire for electrically connecting the semiconductor chip and the thin film lead electrode;
A mold material for sealing the semiconductor chip and the wire;
A part of the lower surface of the thick film lead electrode is exposed on the lower surface of the package and used as a heat dissipation electrode,
A part of the upper surface of the thin film lead electrode is exposed on the upper surface of the package and used as an input / output electrode,
A part of the upper surface of the thick film lead electrode is exposed on the package upper surface and used as a ground electrode,
The thick-film lead electrode is made using a copper-based material, and a plating layer is formed in and around the region where the semiconductor chip is die-bonded,
A mold package, wherein a copper oxide film is formed on a surface of the thick film lead electrode, and the copper oxide film is deposited on the surface of the plating layer in the vicinity of a region where the semiconductor chip is die-bonded. 前記半導体チップは、前記厚膜リード電極の中央部を折り曲げた凹部にダイボンドされていることを特徴とする請求項１に記載のモールドパッケージ。   2. The mold package according to claim 1, wherein the semiconductor chip is die-bonded to a concave portion obtained by bending a central portion of the thick film lead electrode. 前記半導体チップを覆うように塗布されたコート材を更に有し、
前記厚膜リード電極には、前記半導体チップがダイボンドされる領域の周囲にストッパー溝が設けられていることを特徴とする請求項１に記載のモールドパッケージ。 A coating material applied so as to cover the semiconductor chip;
2. The mold package according to claim 1, wherein the thick film lead electrode is provided with a stopper groove around a region where the semiconductor chip is die-bonded. 前記厚膜リード電極は、パッケージ上下面近傍において上下面に対し垂直になるように曲げられていることを特徴とする請求項１に記載のモールドパッケージ。   2. The mold package according to claim 1, wherein the thick film lead electrode is bent so as to be perpendicular to the upper and lower surfaces in the vicinity of the upper and lower surfaces of the package. 前記パッケージ上面で露出した前記接地電極の形状は、コの字又はＵ字であることを特徴とする請求項１に記載のモールドパッケージ。   The mold package according to claim 1, wherein the shape of the ground electrode exposed on the upper surface of the package is a U-shape or a U-shape. 前記厚膜リード電極は、銅系材質を用いて作成され、表面に酸化銅被膜が形成されていることを特徴とする請求項１に記載のモールドパッケージ。 The mold package according to claim 1, wherein the thick film lead electrode is made of a copper-based material and has a copper oxide film formed on a surface thereof .
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