JP5096005B2 - 高輝度及び高速の中性子シンチレータ - Google Patents
高輝度及び高速の中性子シンチレータ Download PDFInfo
- Publication number
- JP5096005B2 JP5096005B2 JP2006548233A JP2006548233A JP5096005B2 JP 5096005 B2 JP5096005 B2 JP 5096005B2 JP 2006548233 A JP2006548233 A JP 2006548233A JP 2006548233 A JP2006548233 A JP 2006548233A JP 5096005 B2 JP5096005 B2 JP 5096005B2
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- JP
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- Prior art keywords
- xce
- neutron detector
- less
- neutron
- single crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000000463 material Substances 0.000 claims description 33
- 239000013078 crystal Substances 0.000 claims description 18
- 239000000843 powder Substances 0.000 claims description 9
- 229910052765 Lutetium Inorganic materials 0.000 claims description 6
- 229910052746 lanthanum Inorganic materials 0.000 claims description 6
- 229910052706 scandium Inorganic materials 0.000 claims description 6
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 claims description 5
- 229910052794 bromium Inorganic materials 0.000 claims description 5
- 229910052727 yttrium Inorganic materials 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 description 9
- 238000001514 detection method Methods 0.000 description 9
- 239000002245 particle Substances 0.000 description 9
- 230000005855 radiation Effects 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- HSZCZNFXUDYRKD-UHFFFAOYSA-M lithium iodide Chemical compound [Li+].[I-] HSZCZNFXUDYRKD-UHFFFAOYSA-M 0.000 description 4
- 230000005251 gamma ray Effects 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052761 rare earth metal Inorganic materials 0.000 description 2
- 230000035945 sensitivity Effects 0.000 description 2
- GPRLSGONYQIRFK-MNYXATJNSA-N triton Chemical compound [3H+] GPRLSGONYQIRFK-MNYXATJNSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 240000008397 Ganoderma lucidum Species 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000005493 condensed matter Effects 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004020 luminiscence type Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- MYWUZJCMWCOHBA-VIFPVBQESA-N methamphetamine Chemical compound CN[C@@H](C)CC1=CC=CC=C1 MYWUZJCMWCOHBA-VIFPVBQESA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000009206 nuclear medicine Methods 0.000 description 1
- 239000003129 oil well Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000002601 radiography Methods 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000004611 spectroscopical analysis Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/161—Applications in the field of nuclear medicine, e.g. in vivo counting
- G01T1/164—Scintigraphy
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/77—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals
- C09K11/7766—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing rare earth metals containing two or more rare earth metals
- C09K11/7772—Halogenides
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/12—Halides
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Biomedical Technology (AREA)
- Medical Informatics (AREA)
- Nuclear Medicine, Radiotherapy & Molecular Imaging (AREA)
- Optics & Photonics (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Physics & Mathematics (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Luminescent Compositions (AREA)
- Measurement Of Radiation (AREA)
Description
Cs(2−z)RbzLiLn(1−x)X6:xCe3+
を有し、また、上式において、Xは、Br又はIのいずれかであり、Lnは、Y又はGd又はLu又はSc又はLaであり、zは、0よりも大きいかもしくは0に等しくかつ2よりも小さいかもしくは2に等しく、そしてxは0.0005を上回っている。数値xは、Ln及びCeの合計のモル分率である。数値xは、0.005を上回っているけれども、また、xは0.05モル%を上回っているとも言うことができる。どちらの用語も同意義である。一般的に、xは0.3よりも小さく(=30モル%未満)、さらに一般的には0.15よりも小さい。
Cs2LiY(1−x)X6:xCe3+
CsRbLiY(1−x)X6:xCe3+
Claims (30)
- Cs(2−z)RbzLiLn(1−x)X6:xCe3+
(式中、Xは、Br又はIであり、Lnは、Y又はGd又はLu又はSc又はLaであり、zは、0よりも大きいかもしくは0に等しくかつ2よりも小さいかもしくは2に等しく、そしてxは0.0005よりも大きい)をシンチレーション材料として含んでなる中性子検出器。 - 上式中、xは0.005よりも大きい、請求項1に記載の中性子検出器。
- 上式中、xは0.3よりも小さい、請求項1又は2に記載の中性子検出器。
- 上式中、xは0.15よりも小さい、請求項1〜3のいずれか1項に記載の中性子検出器。
- 単結晶の形をしている、請求項1〜4のいずれか1項に記載の中性子検出器。
- 前記単結晶の体積は、少なくとも10mm3である、請求項5に記載の中性子検出器。
- 粉末の形をしている、請求項1〜4のいずれか1項に記載の中性子検出器。
- 前記粉末は、まとめられているか、焼結されているか、又はバインダと混合されているかのいずれかである、請求項7に記載の中性子検出器。
- その式は、Cs2LiYX6:xCe3+である、請求項1〜8のいずれか1項に記載の中性子検出器。
- その式は、Rb2LiYX6:xCe3+である、請求項1〜8のいずれか1項に記載の中性子検出器。
- 次式の材料:
Cs(2−z)RbzLiLn(1−x)X6:xCe3+
(式中、Xは、Br又はIであり、Lnは、Y又はGd又はLu又はSc又はLaであり、zは、0よりも大きいかもしくは0に等しくかつ2よりも小さいかもしくは2に等しく、そしてxは0.0005よりも大きい)の中性子検出における使用。 - 上式中、xは0.005よりも大きい、請求項11に記載の使用。
- 上式中、xは0.3よりも小さい、請求項11又は12に記載の使用。
- 上式中、xは0.15よりも小さい、請求項13に記載の使用。
- 前記材料は単結晶の形をしている、請求項11〜14のいずれか1項に記載の使用。
- 前記単結晶の体積は、少なくとも10mm3である、請求項15に記載の使用。
- 前記材料は粉末の形をしている、請求項11〜14のいずれか1項に記載の使用。
- 前記粉末は、まとめられているか、焼結されているか、又はバインダと混合されているかのいずれかである、請求項17に記載の使用。
- 前記材料の式は、Cs2LiYX6:xCe3+である、請求項11〜18のいずれか1項に記載の使用。
- 前記材料の式は、Rb2LiYX6:xCe3+である、請求項11〜18のいずれか1項に記載の使用。
- 式Rb2LiLnX6:xCe3+(式中、Xは、Br又はIであり、Lnは、Y又はGd又はLu又はSc又はLaであり、そしてxは0.0005よりも大きい)により表される材料。
- 上式中、LnはYである、請求項21に記載の材料。
- 次式:
Cs(2−z)RbzLiLn(1−x)I6:xCe3+
(式中、Lnは、Y又はGd又はLu又はSc又はLaであり、zは、0よりも大きいかもしくは0に等しくかつ2よりも小さいかもしくは2に等しく、そしてxは0.0005よりも大きい)により表される材料。 - 上式中、xは0.005よりも大きい、請求項21〜23のいずれか1項に記載の材料。
- 上式中、xは0.3よりも小さい、請求項21〜24のいずれか1項に記載の材料。
- 上式中、xは0.15よりも小さい、請求項25に記載の材料。
- 単結晶の形をしている、請求項21〜26のいずれか1項に記載の材料。
- 前記単結晶の体積は、少なくとも10mm3である、請求項27に記載の材料。
- 粉末の形をしている、請求項21〜23のいずれか1項に記載の材料。
- 前記粉末は、まとめられているか、焼結されているか、又はバインダと混合されているかのいずれかである、請求項29に記載の材料。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04290068A EP1553430A1 (en) | 2004-01-09 | 2004-01-09 | High light yield thermal neutron scintillators |
EP04290068.8 | 2004-01-09 | ||
PCT/EP2005/000098 WO2005068585A1 (en) | 2004-01-09 | 2005-01-10 | Bright and fast neutron scintillators |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2007517949A JP2007517949A (ja) | 2007-07-05 |
JP5096005B2 true JP5096005B2 (ja) | 2012-12-12 |
Family
ID=34586022
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006548233A Expired - Fee Related JP5096005B2 (ja) | 2004-01-09 | 2005-01-10 | 高輝度及び高速の中性子シンチレータ |
Country Status (11)
Country | Link |
---|---|
US (2) | US7525100B2 (ja) |
EP (2) | EP1553430A1 (ja) |
JP (1) | JP5096005B2 (ja) |
KR (2) | KR101245883B1 (ja) |
CN (2) | CN102928868A (ja) |
AU (1) | AU2005205121A1 (ja) |
CA (1) | CA2552772A1 (ja) |
EA (1) | EA008364B1 (ja) |
IL (1) | IL176435A (ja) |
UA (1) | UA88781C2 (ja) |
WO (1) | WO2005068585A1 (ja) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2855830B1 (fr) * | 2003-06-05 | 2005-07-08 | Stichting Tech Wetenschapp | Cristaux scintillateurs du type iodure de terre rare |
US7368719B2 (en) * | 2006-06-28 | 2008-05-06 | Ge Homeland Protection, Inc. | Scintillating materials, articles employing the same, and methods for their use |
US7767971B2 (en) | 2005-09-16 | 2010-08-03 | Stichting Voor De Technische Wetenschappen | High light yield fast scintillator |
EP1764631A1 (en) * | 2005-09-16 | 2007-03-21 | Stichting Voor De Technische Wetenschappen | High light yield fast scintillator |
ATE500524T1 (de) * | 2007-03-05 | 2011-03-15 | Icx Technologies Gmbh | Festkörperneutrondetektor |
US7655919B1 (en) | 2007-11-09 | 2010-02-02 | Radiation Monitoring Devices, Inc. | Cesium and lithium-containing quaternary compound scintillators |
US8575553B1 (en) | 2007-11-09 | 2013-11-05 | Radiation Monitoring Devices, Inc. | Cesium and sodium-containing scintillator compositions |
US8242452B1 (en) | 2007-11-09 | 2012-08-14 | Radiation Monitoring Devices, Inc. | Cesium and sodium-containing scintillator compositions |
US7939808B1 (en) | 2007-11-09 | 2011-05-10 | Radiation Monitoring Devices, Inc. | Cesium and lithium-containing quaternary compound scintillators |
US7977645B1 (en) | 2007-11-09 | 2011-07-12 | Radiation Monitoring Devices, Inc. | Mixed cesium sodium and lithium halide scintillator compositions |
US7767975B2 (en) * | 2007-12-04 | 2010-08-03 | Saint-Gobain Cristaux Et Detecteurs | Ionizing radiation detector |
FR2929296B1 (fr) * | 2008-03-31 | 2011-01-21 | Saint Gobain Cristaux Detecteurs | Recuit de monocristaux |
US8153982B1 (en) * | 2008-06-25 | 2012-04-10 | Radiation Monitoring Devices, Inc. | Yttrium-containing scintillator compositions, devices and methods |
US20100224798A1 (en) * | 2008-09-11 | 2010-09-09 | Stichting Voor De Technische Wetenschappen | Scintillator based on lanthanum iodide and lanthanum bromide |
US8178008B2 (en) * | 2008-09-17 | 2012-05-15 | General Electric Company | Semiconductor material for radiation absorption and detection |
US8440980B2 (en) * | 2009-08-03 | 2013-05-14 | Radiation Monitoring Devices, Inc. | CsLiLn halide scintillator |
US20110024634A1 (en) * | 2009-08-03 | 2011-02-03 | Radiation Monitoring Devices, Inc. | ENRICHED CsLiLn HALIDE SCINTILLATOR |
US8993968B2 (en) * | 2011-03-25 | 2015-03-31 | Nanoptics, Incorporated | Materials, method, and apparatus for detecting neutrons and ionizing radiation |
US9029784B1 (en) | 2011-09-28 | 2015-05-12 | The United States Of America As Represented By The Secretary Of The Navy | Spectrally resolved pulse height analysis for neutron-gamma discrimination |
FR2982992B1 (fr) * | 2011-11-22 | 2018-05-25 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif destine a de l'imagerie neutronique en milieu immerge et procede d'imagerie utilisant ledit dispositif |
FR3004467B1 (fr) | 2013-04-12 | 2016-05-27 | Saint-Gobain Cristaux Et Detecteurs | Fabrication d'une elpasolite stoechiometrique |
JP6204763B2 (ja) * | 2013-09-05 | 2017-09-27 | 株式会社トクヤマ | 中性子シンチレーター及び中性子検出器 |
WO2015064587A1 (ja) * | 2013-10-28 | 2015-05-07 | 株式会社トクヤマ | 中性子シンチレーター及び中性子検出器 |
US9784858B2 (en) | 2013-10-28 | 2017-10-10 | Tokuyama Corporation | Neutron scintillator, neutron detector and method for manufacturing neutron scintillator |
US11254867B1 (en) | 2015-04-06 | 2022-02-22 | Radiation Monitoring Devices, Inc. | Thallium-based scintillator materials |
US11940577B1 (en) | 2017-10-19 | 2024-03-26 | Radiation Monitoring Devices, Inc. | Wide bandgap semiconductor radiation detectors |
WO2021150665A2 (en) * | 2020-01-21 | 2021-07-29 | Bnnt, Llc | Crystal-coated bnnt scintillators |
WO2021210574A1 (ja) * | 2020-04-14 | 2021-10-21 | 三菱ケミカル株式会社 | 蛍光体、発光装置および放射線検知器 |
US11906692B2 (en) | 2021-02-11 | 2024-02-20 | China Petroleum & Chemical Corporation | Nuclear logging tools and applications thereof |
FR3142485A1 (fr) | 2022-11-29 | 2024-05-31 | Saint Gobain Cristaux Et Detecteurs | Materiau scintillateur, procede de fabrication et application de ce materiau |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4761347A (en) * | 1984-07-09 | 1988-08-02 | Fuji Photo Film Co., Ltd. | Phosphor and radiation image storage panel containing the same |
JPS6121182A (ja) * | 1984-07-10 | 1986-01-29 | Fuji Photo Film Co Ltd | 螢光体およびその製造法 |
JPS6121179A (ja) * | 1984-07-10 | 1986-01-29 | Fuji Photo Film Co Ltd | 放射線像変換方法およびその方法に用いられる放射線像変換パネル |
JPH0784588B2 (ja) * | 1984-09-14 | 1995-09-13 | コニカ株式会社 | 放射線画像変換方法及びその方法に用いられる放射線画像変換パネル |
EP0685548B1 (en) * | 1994-06-03 | 2003-02-26 | Agfa-Gevaert | A novel class of high energy detecting materials |
-
2004
- 2004-01-09 EP EP04290068A patent/EP1553430A1/en not_active Withdrawn
-
2005
- 2005-01-10 CN CN201210383107XA patent/CN102928868A/zh active Pending
- 2005-01-10 AU AU2005205121A patent/AU2005205121A1/en not_active Abandoned
- 2005-01-10 KR KR1020127017160A patent/KR101245883B1/ko not_active IP Right Cessation
- 2005-01-10 WO PCT/EP2005/000098 patent/WO2005068585A1/en active Application Filing
- 2005-01-10 CA CA002552772A patent/CA2552772A1/en not_active Abandoned
- 2005-01-10 EA EA200601299A patent/EA008364B1/ru not_active IP Right Cessation
- 2005-01-10 CN CNA2005800019933A patent/CN1910262A/zh active Pending
- 2005-01-10 KR KR1020067013687A patent/KR20060127033A/ko not_active Application Discontinuation
- 2005-01-10 EP EP05700749.4A patent/EP1711580B1/en active Active
- 2005-01-10 JP JP2006548233A patent/JP5096005B2/ja not_active Expired - Fee Related
- 2005-01-10 US US10/585,649 patent/US7525100B2/en active Active
- 2005-10-01 UA UAA200608876A patent/UA88781C2/ru unknown
-
2006
- 2006-06-20 IL IL176435A patent/IL176435A/en not_active IP Right Cessation
-
2009
- 2009-02-25 US US12/392,380 patent/US7910894B2/en active Active
Also Published As
Publication number | Publication date |
---|---|
KR20060127033A (ko) | 2006-12-11 |
EP1711580B1 (en) | 2017-12-13 |
CA2552772A1 (en) | 2005-07-28 |
AU2005205121A1 (en) | 2005-07-28 |
EA200601299A1 (ru) | 2006-10-27 |
EP1711580A1 (en) | 2006-10-18 |
KR20120091422A (ko) | 2012-08-17 |
US20090242784A1 (en) | 2009-10-01 |
WO2005068585A1 (en) | 2005-07-28 |
UA88781C2 (ru) | 2009-11-25 |
WO2005068585A8 (en) | 2006-09-28 |
EP1553430A1 (en) | 2005-07-13 |
IL176435A0 (en) | 2006-10-05 |
IL176435A (en) | 2010-12-30 |
KR101245883B1 (ko) | 2013-03-20 |
US7910894B2 (en) | 2011-03-22 |
US20070295915A1 (en) | 2007-12-27 |
CN102928868A (zh) | 2013-02-13 |
EA008364B1 (ru) | 2007-04-27 |
CN1910262A (zh) | 2007-02-07 |
AU2005205121A2 (en) | 2005-07-28 |
JP2007517949A (ja) | 2007-07-05 |
US7525100B2 (en) | 2009-04-28 |
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