JP5090281B2 - 基板電位測定装置及び基板電位測定方法 - Google Patents
基板電位測定装置及び基板電位測定方法 Download PDFInfo
- Publication number
- JP5090281B2 JP5090281B2 JP2008189337A JP2008189337A JP5090281B2 JP 5090281 B2 JP5090281 B2 JP 5090281B2 JP 2008189337 A JP2008189337 A JP 2008189337A JP 2008189337 A JP2008189337 A JP 2008189337A JP 5090281 B2 JP5090281 B2 JP 5090281B2
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- potential
- processed
- contact
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims description 128
- 238000000034 method Methods 0.000 title claims description 19
- 238000005530 etching Methods 0.000 description 15
- 239000007789 gas Substances 0.000 description 14
- 230000002159 abnormal effect Effects 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 6
- 238000005513 bias potential Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000001179 sorption measurement Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000002826 coolant Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000691 measurement method Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
Images
Landscapes
- Drying Of Semiconductors (AREA)
Description
抵抗10の両端には、当該抵抗10間に発生する電位を測定する公知の構造を有する電位モニタ(測定手段)11が接続されている。また、抵抗10の片端とアースとの間にはスイッチ手段12が設けられ、接触ピン6とアースとを適宜接続できるようになっている。
4 静電チャック
5 基板電位測定装置
6 接触ピン(接触手段)
7 貫通孔
8 駆動手段
10 抵抗
11 電位モニタ(測定手段)
12 スイッチ手段
Claims (5)
- 処理室内のステージに、アースに対して絶縁状態で保持された被処理基板の電位を測定する基板電位測定装置であって、
前記被処理基板に接触可能な導電性の接触手段と、抵抗を介して前記接触手段をアース接地して前記抵抗間に発生する電位を測定する測定手段とを備え、被処理基板の電位と同等の基準電位を前記接触手段に印加する電源を更に備えたことを特徴とする基板電位測定装置。 - 前記接触手段をステージ内に組み付けたことを特徴とする請求項1記載の基板電位測定装置。
- 前記被処理基板の非処理面に対し前記接触手段を進退自在に駆動する駆動手段を備えたことを特徴とする請求項2記載の基板電位測定装置。
- スイッチ手段を更に備え、前記接触手段を前記被処理基板に接触させた後、前記スイッチ手段を作動させて前記抵抗間に生じる電位を測定することを特徴とする請求項1乃至請求項3のいずれか1項に記載の基板電位測定装置。
- 処理室内のステージに、アースに対して絶縁状態で被処理基板を保持させ、前記被処理基板に、被処理基板の電位と同等の基準電位を印加した導電性の接触手段を接触させ、前記接触手段を、抵抗を介してアース接地し、抵抗間に発生する電位から基板の電位を測定するようにしたことを特徴とする基板電位測定方法。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008189337A JP5090281B2 (ja) | 2008-07-23 | 2008-07-23 | 基板電位測定装置及び基板電位測定方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2008189337A JP5090281B2 (ja) | 2008-07-23 | 2008-07-23 | 基板電位測定装置及び基板電位測定方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010027940A JP2010027940A (ja) | 2010-02-04 |
JP5090281B2 true JP5090281B2 (ja) | 2012-12-05 |
Family
ID=41733466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2008189337A Active JP5090281B2 (ja) | 2008-07-23 | 2008-07-23 | 基板電位測定装置及び基板電位測定方法 |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP5090281B2 (ja) |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2000268993A (ja) * | 1999-03-15 | 2000-09-29 | Toshiba Corp | プラズマ計測用プローブ,プラズマ計測装置及びプラズマ生成装置 |
JP2005310945A (ja) * | 2004-04-20 | 2005-11-04 | Hitachi High-Technologies Corp | 半導体製造装置およびウェハの静電吸着方法・除電方法 |
-
2008
- 2008-07-23 JP JP2008189337A patent/JP5090281B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2010027940A (ja) | 2010-02-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP2016225439A (ja) | プラズマ処理装置及び基板剥離検知方法 | |
KR101415551B1 (ko) | 정전척, 이의 제조 방법 및 이를 포함하는 기판 처리 장치 | |
US7541283B2 (en) | Plasma processing method and plasma processing apparatus | |
JP6292977B2 (ja) | 静電チャック及び半導体・液晶製造装置 | |
KR101918810B1 (ko) | 기판 처리 방법 및 기판 처리 장치 | |
US20060037704A1 (en) | Plasma Processing apparatus and method | |
US20060175772A1 (en) | Substrate holding mechanism using electrostaic chuck and method of manufacturing the same | |
TWI559359B (zh) | 中段頻率射頻範圍中之高電壓偏壓電源用之旁路電容器 | |
KR20000071664A (ko) | 반도체 웨이퍼 프로세스 장치에서 지지 표면을 회복시키는방법 및 장치 | |
JP2005136350A (ja) | 静電吸着装置、プラズマ処理装置及びプラズマ処理方法 | |
JP2018093173A (ja) | プラズマ処理装置 | |
JP6308871B2 (ja) | 静電チャック及び半導体・液晶製造装置 | |
JP4010541B2 (ja) | 静電吸着装置 | |
JP2016058670A (ja) | プラズマ処理装置 | |
JP4642809B2 (ja) | プラズマ処理方法及びプラズマ処理装置 | |
US9484180B2 (en) | Plasma processing method and plasma processing apparatus | |
JP5090281B2 (ja) | 基板電位測定装置及び基板電位測定方法 | |
JP2011049567A (ja) | 分割可能な電極及びこの電極を用いたプラズマ処理装置ならびに電極交換方法 | |
KR100780366B1 (ko) | 반도체 제조 장치 | |
US8593780B2 (en) | Substrate removing method and storage medium | |
JP2005310945A (ja) | 半導体製造装置およびウェハの静電吸着方法・除電方法 | |
JP2001223259A (ja) | 静電吸着電極 | |
JPH11233602A (ja) | 静電吸着装置及び試料処理装置 | |
JP5335421B2 (ja) | 真空処理装置 | |
CN110797251A (zh) | 基底加工设备和基底加工方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20110707 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20120607 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120612 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120801 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20120904 |
|
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20120912 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20150921 Year of fee payment: 3 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5090281 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |