JP5082081B2 - Ultrasonic vibration bonding equipment - Google Patents

Description

  The present invention relates to a technique for joining a plurality of objects to be joined by applying ultrasonic vibrations to a plurality of objects to be joined as objects to be joined.

  Conventionally, when ultrasonic vibration is applied to a plurality of objects to be joined that are polymerized as objects to be joined to join the plurality of objects to be joined, the ultrasonic vibration is applied and at the same time the superimposed objects are heated. By doing so, a technique for stabilizing the bonding strength without increasing the ultrasonic vibration energy and improving the feeling of quality and reliability is known (for example, Patent Document 1). That is, in a state where a plurality of superposed objects are sandwiched between the resonator and the stage, ultrasonic vibration energy is supplied to the vibrator coupled to the resonator to ultrasonically vibrate the vibrator. And the resonator is heated to a predetermined temperature by a heater built in the resonator.

  With such a configuration, ultrasonic vibration is applied to the plurality of superposed objects to be bonded from the resonance-vibrated resonator, and the plurality of objects to be bonded are heated by the resonator heated by the heater. . Therefore, since the joining energy by the sum of the frictional heat generated by ultrasonic vibration and the heat from the heater concentrates on the multiple objects to be polymerized, the ultrasonic vibration energy supplied to the vibrator can be increased. The plurality of objects to be bonded can be appropriately bonded without increasing the pressure applied to the plurality of objects to be bonded in a polymerized state.

  By the way, in the technique described in Patent Document 1 described above, since the heater is provided in the resonator, improvement of the technique has been required for the following points. That is, when joining the objects to be joined together using ultrasonic vibration and heating, the resonator body is first heated by a heater, and the objects to be joined are heated by the heated resonator. At this time, although the bonding temperature varies depending on the material and size of the object to be bonded, since it takes time until the temperature of the resonator reaches the predetermined bonding temperature, the resonator is always heated to be maintained at the predetermined bonding temperature. It was necessary to keep.

  However, normally, the resonator is designed to resonate at a predetermined set frequency, but by always heating the resonator to a predetermined junction temperature, the heated resonator expands, etc. The natural frequency of the resonator may deviate from the natural frequency at the time of design. For this reason, a plurality of types of resonators are formed exclusively for each bonding temperature, that is, according to the type and size of the object to be bonded, and the resonator is exchanged according to the type of object to be bonded, etc. Was very inefficient.

  Therefore, for example, in the technique described in Patent Document 2, a measure has been taken in which a holding means for an object having a heater is attached to a resonator via a heat blocking member. With such a configuration, heat transfer from the heater to the resonator is suppressed, and heat of the heater is transmitted only to the holding means without changing the temperature of the resonator. It is possible to shorten the temperature raising time for raising the temperature. In addition, since the temperature change of the resonator is suppressed, the natural frequency of the resonator does not change, and a common resonator can be used at various junction temperatures according to the type of the object to be joined.

Japanese Patent No. 3078231 (paragraphs [0004], [0008] to [0010], [0021], [0034], [0037], [0041], FIGS. 1 and 2) JP-A-2006-339198 (see paragraphs [0007] and [0013], FIG. 3)

  However, in the technique described in Patent Document 2 described above, there is a problem in that a heat blocking member must be separately provided between the resonator and the holding unit, which increases the number of parts and makes the apparatus configuration complicated. .

  This invention is made | formed in view of the said subject, and it aims at providing the technique which can perform a joining operation | work efficiently with a simple structure.

In order to achieve the above-described object, an ultrasonic vibration bonding apparatus according to the present invention includes a resonator that is ultrasonically vibrated by vibration generated by a vibrator and is made of a material having a thermal conductivity of 25.0 W / m ° C. or less. A ceramic heater that is attached to the maximum amplitude portion of the resonator along the circumferential direction to hold the object to be heated so that the object to be heated can be heated, and an object to be bonded is disposed between the ceramic heater and the ceramic heater. A stage for clamping, a clamp means for clamping and supporting the resonator with the ceramic heater facing the stage, and a power supply means having a terminal for supplying power to the ceramic heater, the power supply means The terminal of the power supply is detachably connected to a power supply electrode formed on the surface of the ceramic heater in a state where the resonator is supported by the clamp means. And is characterized in allowing ultrasonic vibration independent said resonator and said terminal of said power supply means (claim 1).

Further, in the ultrasonic bonding apparatus according to the present invention, a plurality of the ceramic heaters are attached along the circumferential direction of the resonator, and the terminal of the power supply means and the power supply electrode of the ceramic heater are provided. The ceramic heater that should hold the object to be bonded to the stage is replaced by the rotation of the resonator in a separated state (claim 2).

According to the first aspect of the present invention , power is supplied to the ceramic heater by contact of the terminal of the power supply means with the electrode formed on the surface of the ceramic heater so as to be detachable. Compared to a configuration in which the power supply wiring is directly connected to the ceramic heater by solder etc., the power supply wiring does not vibrate together with the resonator, which may affect the vibration characteristics of the resonator. Absent. In addition, since the power is supplied while the terminal contacts the electrode formed on the ceramic heater so as to be freely separated, the resonator vibrates ultrasonically independently of the terminal of the power supply means, so the power supply wiring is disconnected. The durability can be improved.

According to the second aspect of the present invention, when the ceramic heater sandwiching the bonded portion between the stage and the stage is worn, the resonator is rotated, and the unused ceramic heater is placed on the stage. The ceramic heaters can be easily replaced by arranging them to face each other.

1 is a schematic configuration diagram of an embodiment of an ultrasonic vibration bonding apparatus according to the present invention. It is a bottom view of the resonator with which the ultrasonic vibration joining apparatus shown in FIG. 1 is provided. FIG. 3 is a right side view of FIG. 2, and is a cross-sectional view of the resonator taken along line AA. FIG. 3 is an enlarged view of a main part of FIG. 2. It is operation | movement explanatory drawing of the resonator shown in FIG. It is a figure which shows the operation example (1) of an ultrasonic vibration joining process. It is a figure which shows the operation example (2) of an ultrasonic vibration joining process. It is a figure which shows the operation example (3) of an ultrasonic vibration joining process. It is a figure which shows the operation example (4) of an ultrasonic vibration joining process. It is a figure which shows the operation example (5) of an ultrasonic vibration joining process. It is a figure which shows the operation example (6) of an ultrasonic vibration joining process. It is a figure which shows the operation example (7) of an ultrasonic vibration joining process. It is a figure which shows the temperature rising characteristic of a heater and a resonator. It is a principle explanatory view of an electrostatic chuck.

  An embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a schematic configuration diagram of an embodiment of an ultrasonic vibration bonding apparatus according to the present invention. FIG. 2 is a bottom view of the resonator included in the ultrasonic vibration bonding apparatus shown in FIG. 3 is a right side view of FIG. 2 and is a cross-sectional view of the resonator taken along line AA. FIG. 4 is an enlarged view of a main part of FIG. FIG. 5 is a diagram for explaining the operation of the resonator shown in FIG.

<Device configuration>
In the ultrasonic vibration bonding apparatus 200 shown in FIG. 1, a chip 20 that is an object to be bonded that is held by the resonator 7 and that has a metal molten electrode 20 a made of lead-tin solder on a bonding surface of a semiconductor. The substrate 22 having the metal melted electrode 22a made of lead-tin solder, which is an object to be joined, held by the stage 10 disposed opposite to the resonator 7 and having a molten metal electrode 22a made of lead-tin solder can be vertically controlled. The chip 20 is heated by being applied with ultrasonic vibration by the vibrator 8 and the resonator 7 and being heated by the ceramic heater 9 while being pressurized by the drive mechanism 25 so that the metal molten electrode 20a and the metal molten electrode 22a are in contact with each other. And the substrate 22 are bonded together. As described above, the ultrasonic vibration bonding apparatus 200 according to the present embodiment can form devices such as various semiconductor devices (such as optical element devices) or MEMS devices by bonding the chip 20 and the substrate 22. It is configured as follows.

  As shown in FIG. 1, the ultrasonic vibration bonding apparatus 200 includes a bonding mechanism 27, a mounting mechanism 28 having a stage 10 and a stage table 12, a position recognition unit 29, a transport unit 30, and a control device 31. I have. The joining mechanism 27 includes a vertical drive mechanism 25 and a resonator unit 26. The vertical drive mechanism 25 guides the resonator holding unit 6 with the vertical guide 3 by the vertical drive motor 1 and the bolt / nut mechanism 2. It is configured to move up and down. The resonator holding unit 6 is guided in the vertical direction by the head escape guide 5 and is connected to the bolt / nut mechanism 2 while being pulled by the own weight counter 4 for canceling the own weight. A resonator unit 26 having the resonator 7 is coupled to the resonator holding unit 6.

  The resonator holding unit 6 is provided with a pressure sensor 32, which can detect a pressure applied to an object to be joined (chip 20, substrate 22, etc.) sandwiched between the resonator 7 and the stage 10. It is configured as follows. Therefore, by feeding back the pressure applied to the workpiece detected by the pressure sensor 32 to the control device 31, the vertical drive mechanism 25 is controlled based on the feedback value to control the pressure applied to the workpiece. be able to.

  The resonator unit 26 is provided by being bonded to the resonator 7 and a position f2 (see FIG. 2) which is the maximum amplitude unit of the resonator 7 with a thermosetting adhesive, and the chip 20 A ceramic heater 9 that adsorbs and holds an object) so as to be heatable, and a vibrator 8 that are arranged so that the vibration of the resonator 7 is not hindered. The height of the resonator unit 26 can be detected by the resonator unit height detection means 24 provided in the resonator holding unit 6. The configuration and operation of the resonator unit 26 will be described in detail later.

  Further, the mounting mechanism 28 sucks and holds the substrate 22, the stage 10 including the stage heater 11 therein, and a stage table having a movable shaft that can be moved in parallel and rotationally to adjust the position of the substrate 22 with respect to the chip 20. 12. The joining mechanism 27 is coupled to the frame 34, and the frame 34 is connected to the gantry 35 by the four support columns 13 disposed so as to surround the periphery of the center of pressure of the resonator unit 26. Thus, the chip 20 and the substrate 22 that are the objects to be joined can be heated by the ceramic heater 9 and the stage heater 11. A part of the support column 13 and the frame 34 is not shown.

  The position recognition unit 29 is inserted between the chip 20 and the substrate 22 arranged to face each other, and the upper and lower mark recognition means 14 for recognizing alignment marks for position recognition of the upper and lower chips 20 and the substrate 22 respectively. 20, the amplitude detector 33 for detecting the amplitude of the substrate 22 and the resonator 7, and the positions of the objects to be joined by causing the light emitting elements to function electrically when emitting the light emitting elements as the objects to be joined. A light emitting point recognizing means (not shown) used for adjustment (alignment) and a recognizing means moving table 15 for moving the recognizing means 14 and the amplitude detector 33 horizontally and / or vertically are provided.

  Further, the transport unit 30 includes a substrate transport device 16 and a substrate transport conveyor 17 that transport the substrate 22, and a chip supply device 18 and a chip tray 19 that transport the chips 20. Further, the control device 31 includes an operation panel (not shown) for controlling the resonator unit 26 and controlling the entire ultrasonic vibration bonding apparatus 200, and resonance by the resonator unit height detection unit 24. The vertical drive mechanism 25 is controlled by the detection signal of the height position of the resonator unit 26, and the height of the resonator unit 26 in the direction of arrow Z in FIG. 1 can be adjusted. The configuration and operation of the control device 31 will be described later in detail.

<Resonator>
Next, the resonator unit 26 will be described in detail with reference to FIGS. 2 to 5. The resonator 7 is ultrasonically vibrated by the vibration generated by the vibrator 8 controlled by the control device 31, and has a thermal conductivity of about 25.0 W / m ° C. or less, for example, a titanium alloy (6Al-4V, about 7 .5 W / m ° C.). In addition, as shown in FIG. 2, the resonator 7 is configured substantially symmetrically with the length of one wavelength of the resonance frequency so that the substantially central position f2 and both end positions f0 and f4 are the maximum amplitude portion. Has been. Further, as shown in FIG. 3, the central portion 7C at the center position f2 of the resonator 7 is formed in a plate shape having a substantially square cross section and a thickness. The right side portion 7R and the left side portion 7L sandwiching the central portion 7C are formed in a columnar shape having a substantially circular cross section, and are integrally formed with the central portion 7C.

  Further, the position f1 at the substantially center of the right side portion 7R of the resonator 7 and the position f3 at the substantially center of the left side portion 7L correspond to the minimum amplitude portion (nodal point). Small-diameter portions 7Ra and 7La having small cylindrical diameters are formed. The resonator 7 is fixed to the support member 700 by sandwiching the small diameter portions 7Ra and 7La between the support member 700 supported by the resonator holding portion 6 and the clamp member 701 and fixing them with the bolts 702. Yes. Further, by loosening the bolt 702, the resonator 7 is configured to be rotatable about the central axis in the longitudinal direction as the center of rotation. The method of fixing the resonator 7 to the support member 700 is not limited to the bolt 702, and any method may be used, for example, a mechanical clamp mechanism configured to be electrically controllable.

  Moreover, as shown in FIG. 3, the recessed part 71 is formed in two opposing side surfaces among the four side surfaces of the center part 7C of the resonator 7, so that the ceramic heater 9 can be arrange | positioned. The ceramic heater 9 is adhered and fixed to each of the two recesses 71 with a thermosetting adhesive. Therefore, the ultrasonic vibration of the resonator 7 can be transmitted through the ceramic heater 9 to a plurality of objects to be bonded between the ceramic heater 9 and the stage 10 in a superposed state. In the present embodiment, the ultrasonic vibration is applied to the chip 20 and the substrate 22.

Also, the position of f2 on the central axis in the longitudinal direction of the resonator 7, the suction holes are formed through the ceramic heater 9. The resonator 7 has a through hole in which the one end side 72a communicates with the suction hole and the other end side 72b is exposed to the side surface to which the ceramic heater 9 is not fixed among the four side surfaces described above. 7 is formed.

  Further, as shown in FIG. 3, a valve 710 connected to a suction pump (not shown) for sucking air from the through hole and the suction hole is provided at the other end side 72b of the through hole, as will be described later. The support member 701 is configured to be movable in the direction and is supported by bolts, nuts, and the like, and is disposed so as to be able to contact and separate from the other end side 72b of the through hole. Therefore, by operating the suction pump, the chip 20 (the object to be joined) can be adsorbed through the valve 710, the through hole, and the suction hole.

  As shown in FIGS. 2 to 4, a power supply electrode 92 is formed on the surface of the ceramic heater 9, and a screw is attached to a support member 702 configured to be movable in the direction of arrow C as will be described later. A power supply means 720 is disposed in a supported manner. The flat plate terminal 721 of the power supply means 720 is in contact with the electrode 92 of the ceramic heater 9 so as to be freely contactable and separable, and is controlled by the control device 31 so that power can be supplied to the ceramic heater 9. It is configured. In this embodiment, the flat plate terminal 721 functions as the “terminal” of the present invention. However, the “terminal” is not limited to the flat plate terminal 721, and the configuration / configuration of the ceramic heater 9 or the electrode 92 such as a rod-shaped terminal. Various types of “terminals” can be employed depending on the shape and the like.

  Further, as shown in FIG. 2, a thermocouple 722 is connected to the ceramic heater 9, and the temperature of the ceramic heater 9 can be detected by the control device 31 by detecting the output of the thermocouple 722. Has been. Therefore, by controlling the power supply means 720 by the control device 31 and supplying power to the ceramic heater 9, pulse heat heating control can be performed in which the ceramic heater 9 is heated and cooled at an arbitrary timing. Therefore, pulse heat heating can be performed on the workpiece (chip 20) held by the ceramic heater 9 by the ceramic heater 9. Moreover, the ceramic heater 9 can be controlled to an arbitrary temperature by detecting the output of the thermocouple 722.

  Further, as described above, the support members 701 and 702 are configured to be movable in the directions of arrows B and C, respectively, and are movable between the contact position shown in FIG. 3 and the replacement position shown in FIG. It is configured. That is, when the support members 701 and 702 are located at the contact positions shown in FIG. 3, the valve 710 is in contact with the other end side 72 b of the through hole, and the flat terminal 721 of the power supply means 720 is connected to the electrode 92 of the ceramic heater 9. It is comprised so that it may contact. Further, when the support members 701 and 702 are located at the replacement position shown in FIG. 5, the valve 710 and the flat plate terminal 721 are configured to be separated from the other end side 72 b of the through hole and the electrode 92, respectively.

  With the above configuration, the ultrasonic vibration bonding between the objects to be bonded is repeatedly performed, and the resonator 7 repeatedly ultrasonically vibrates, so that the frictional force generated between the ceramic heater 9 and the objects to be bonded is obtained. 5, even if the entire resonator 7 is not replaced, as shown in FIG. 5, the support members 701 and 702 are moved to the replacement position and the resonator 7 is rotated in the direction of arrow D, for example. The ceramic heater 9 can be replaced. That is, as shown in FIG. 3, when the ceramic heater 9 disposed on the lower side of the resonator 7 is worn, the resonator 7 is rotated and disposed on the upper side of the resonator 7 as shown in FIG. The ceramic heater 9 can be exchanged by positioning the ceramic heater 9 that has been unused before.

  In the present embodiment, the ceramic heater 9 is fixed to only two side surfaces of the four side surfaces of the central portion 7C of the resonator 7, but the ceramic heater 9 may be fixed to all side surfaces. Further, the central portion 7C is formed so that the cross-sectional shape of the central portion 7C of the resonator 7 is substantially rectangular, but the shape of the central portion 7C is not limited to the rectangular shape, and the ceramic heater 9 (heating holding) Any shape such as a polygonal shape may be used as long as the means) can be fixed.

  In this embodiment, the ceramic heater 9 is directly bonded and fixed to the resonator 7 with a thermosetting adhesive. However, the bonding method is not limited to the thermosetting adhesive. After the Ni plating or the like is applied to the bonding surface, a brazing metal such as Ag, Cu, or Ni may be brazed as an adhesive. Further, the fixing method is not limited to bonding, and the ceramic heater 9 may of course be directly attached to the resonator 7 with a bolt or the like.

  In the present embodiment, the ceramic heater 9 is used. However, the wear resistance of the ceramic heater 9 may be improved by coating the suction surface side of the ceramic heater 9 that adsorbs the chip 20. In this embodiment, the resonator 7 is made of a titanium alloy. However, the material of the resonator 7 is not limited to this, and any material (metal, alloy, etc.) that satisfies the above-described conditions may be used. It may be. Materials satisfying the above conditions include stainless steel (austenite, ferrite, martensite, about 14 W / m ° C to about 25 W / m ° C), pure titanium (about 17.1 W / m ° C), free-cutting titanium. Various materials such as (about 18.0 W / m ° C.) can be employed.

  In this embodiment, a titanium alloy is used as a material constituting the resonator 7 of the so-called ultrasonic vibration bonding apparatus 200 for performing metal bonding. Conventionally, a titanium alloy has a low hardness, so that a soft material such as plastic is used. Although it was employed in an ultrasonic vibration bonding apparatus for bonding objects to be bonded, it is considered by those skilled in the art to adopt it in an ultrasonic vibration bonding apparatus 200 for performing metal bonding for bonding high hardness metals. Even that was difficult. However, as a result of various experiments by the inventor of the present application, even if the low-hardness resonator 7 is employed by directly fixing a high-hardness heating and holding means, for example, a ceramic heater 9, to the low-hardness resonator 7, It has been found that bonding can be performed satisfactorily. With such a configuration, for example, a titanium alloy (sound speed is about 6,100 m / s) having very excellent acoustic characteristics is adopted as the resonator 7 of the ultrasonic vibration bonding apparatus 200 that performs metal bonding. Therefore, ultrasonic vibration caused by resonating the resonator 7 can be generated very efficiently.

  Since the ceramic heater 9 is directly bonded to the resonator 7 with an adhesive, there is no possibility of friction between the ceramic heater 9 and the resonator 7. There is no fear of being worn by force, and a particularly advantageous effect that the durability of the resonator 7 can be improved as compared with the case where the ceramic heater 9 is directly attached to the resonator 7 with a bolt or the like.

<Ultrasonic vibration bonding operation>
Next, with reference to FIG. 1 and FIGS. 6 to 12, examples of bonding operations (1) to (7) for bonding objects to be bonded by the ultrasonic vibration bonding apparatus 200 will be described.

1. Joining operation example (1)
The “joining operation example (1)” will be described with reference to FIG. FIG. 6 is a diagram showing an operation example (1) of the ultrasonic vibration joining process. First, the chip 20 is supplied from the chip tray 19 to the resonator 7 by the chip supply device 18 and is sucked and held. The substrate 22 is supplied from the substrate transfer conveyor 17 to the stage 10 by the substrate transfer device 16 and is held by suction. Then, the upper / lower mark recognition means 14 is inserted between the chip 20 and the substrate 22 whose opposing surfaces are held opposite to each other by the recognition means moving table 15, and the alignment marks for alignment between the chips 20 and the substrate 22 held opposite to each other are inserted. The position is detected by the upper and lower mark recognition means 14. Thereafter, the position of the substrate 22 is moved by moving the stage table 12 in parallel and rotating with the position of the chip 20 as a reference, thereby aligning the positions of the chip 20 and the substrate 22.

  Next, the upper and lower mark recognizing means 14 is retracted by the recognizing means moving table 15 in a state where the joining positions of the chip 20 and the substrate 22 are aligned (the positions of the molten metal electrodes 20a and 22a are aligned). Subsequently, as shown in FIG. 6, at time t <b> 0, the vertical drive mechanism 25 starts to lower the resonator unit 26 from the standby position where the position (height) from the stage 10 is ZH. At time t1, the position of the resonator unit 26 reaches the height Zs, and the descending speed of the resonator unit 26 is decelerated immediately before the chip 20 (metal molten electrode 20a) and the substrate 22 (metal molten electrode 22a) come into contact with each other. The

  The position of the resonator unit 26 (resonator holding unit 6) in the height direction (in the direction of arrow Z) is detected by the resonator unit height detection means 24, and the descending speed of the resonator unit 26 is reduced. After that, the resonator unit 26 is further lowered by the control device 31, and the chip 20 and the substrate 22 are brought close to each other. Further, the pressure applied to the chip 20 and the substrate 22 by the vertical drive mechanism 25 by the control device 31 is set to the pressure P1.

  At time t2, when the position of the resonator unit 26 reaches the height Z0 (contact position), the chip 20 and the substrate 22 come into contact with each other, so that the chip 20 and the substrate 22 are based on the detection signal from the pressure sensor 32. Are sandwiched between the resonator 7 (ceramic heater 9) and the stage 10. Thereafter, the controller 31 resets the pressure applied to the chip 20 and the substrate 22 by the resonator unit 26 to the pressure P2, and starts the ultrasonic vibration applying process and the pulse heat heating process to the chip 20 and the substrate 22. .

  Specifically, the chip 20 and the substrate 22 are at least a time from the time t2 at which the chip 20 contacts the substrate 22 to at least a preset time t3, that is, the second time T2 in FIG. An ultrasonic vibration application step of applying ultrasonic vibration is performed, and the deposit layer of organic matter or oxide attached to the surfaces of the metal melting electrodes 20a and 22a is destroyed.

  Further, after time t2 when the chip 20 comes into contact with the substrate 22, the temperature of the ceramic heater 9 is higher than the standby temperature Hw from the standby temperature Hw (about 50 ° C.) and the melting point Hm of the metal melting electrodes 20a and 22a ( In this embodiment, the temperature is raised to a junction temperature Hj (about 150 ° C. in this embodiment) set to a temperature lower than about 183 ° C.). The chip 20 (metal molten electrode 20a) and the substrate 22 (metal molten electrode 22a) are heated at the bonding temperature Hj for a time period up to a preset time t3, that is, for the first time T1 in FIG. After that, the ceramic heater 9 is cooled, and a series of these pulse heat heating processes are performed.

  While applying the ultrasonic vibration, the amplitude detector 33 confirms that “slip” has occurred between the chip 20 and the substrate 22 while applying the ultrasonic vibration and the resonator. The part 26 is brought close to (lowered) the stage 10.

  Subsequently, at time t3, the suction of the chip 20 by the resonator 7 is released, and the return movement of the resonator unit 26 is started from the completion position Z1 to the standby position ZH. Then, at time t4 when the resonator unit 26 reaches the standby position ZH, the movement of the resonator unit 26 is stopped. Thereafter, in a state where the chip 20 is mounted, the substrate 22 held on the stage 10 is discharged to the substrate transfer conveyor 17 by the substrate transfer device 16, and a series of joining operations is completed.

  As described above, in this “joining operation example (1)”, since the joining temperature Hj is set to a temperature lower than the melting point Hm of the metal melting electrodes 20a and 22a, when joining the chip 20 and the substrate 22 together. In addition, the chip 20 and the substrate 22 are excessively heated, so that the molten metal electrodes 20a and 22a are melted and the shapes of the molten metal electrodes 20a and 22a can be reliably prevented. On the other hand, since frictional heat is generated by applying ultrasonic vibrations to the joining surfaces of the metal melting electrodes 20a and 22a, the temperature at the joining surface exceeds the melting point of the metal melting electrodes 20a and 22a. Only the joining surface is melted and the metal melting electrodes 20a and 22a are joined together, and the chip 20 and the substrate 22 are securely joined.

  That is, an adhesion layer such as an organic substance or an oxide film attached to the surface of the metal melting electrode 20a, 22a (lead tin solder) by a frictional force by applying ultrasonic vibration can be removed, and the metal melting electrode 20a, Since the melting point of 22a is a low temperature of about 183 ° C. or less, the metal melting electrode 20a, the metal melting electrode 20a, The chip 20 on which 22a is formed and the substrate 22 can be joined.

  In this way, by applying ultrasonic vibration, the adhering layer such as organic substances and oxide films adhering to the surfaces of the metal melting electrodes 20a and 22a (lead tin solder) is removed. Even if it does not use the flux (flux) which was required for joining fusion electrode 20a, 22a, these fusion metal electrodes 20a, 22a can be joined.

  Conventionally, in order to adjust the shape of the molten metal electrodes 20a and 22a that are heated and melted, the resonator unit 26 is set to a predetermined height before the resonator unit 26 (heating and holding means) is moved back. For this reason, a cooling and solidifying step for cooling and solidifying the molten metal molten electrodes 20a and 22a is necessary by stopping for a long time. However, in this “joining operation example (1)”, since the metal melting electrodes 20a and 22a are not excessively heated and melted, a cooling and solidifying step for adjusting the shape of the metal melting electrodes 20a and 22a becomes unnecessary. The vertical movement control of the resonator unit 26 can be simplified.

  Further, in the above-described cooling and solidifying step, the liquid metal molten electrodes 20a and 22a that are excessively heated and melted move to positions according to the shape of the wiring pattern formed on the chip 20 and the substrate 22 due to the surface tension. And may solidify. For this reason, the molten metal molten electrodes 20a and 22a may move to a position corresponding to the shape of the wiring pattern due to surface tension, and the bonding position of the chip 20 to the substrate 22 may be shifted from the original position. Therefore, there has been a problem when the wiring pattern formed on the chip 20 and the substrate 22 is fine and it is necessary to position the chip 20 and the substrate 22 with high accuracy.

  However, in this “joining operation example (1)”, since the metal melting electrodes 20a and 22a are not excessively heated and melted, there is no possibility that the above-described problems occur, and the chip 20 and the chip 20 and The substrates 22 can be positioned and joined together. Furthermore, it is possible to reliably prevent the fine wiring pattern formed on the chip 20 and the substrate 22 from being short-circuited by the molten metal melting electrodes 20a and 22a.

  Further, by bonding the chip 20 and the substrate 22 by pulse heat heating, it is possible to prevent the chip 20 and the substrate 22 from being excessively heated and damaged. Moreover, since it can suppress that the chip | tip 20 and the board | substrate 22 expand | swell by heating, it can prevent that the chip | tip 20 and the board | substrate 22 expand | swell and an error arises in the joining position between the chip | tip 20 and the board | substrate 22. . Further, the thermally expanded chip 20 and the substrate 22 are cooled, contracted, and deformed, so that it is possible to mitigate the occurrence of stress in the bonded metal melting electrodes 20a and 22a. , 22a can be prevented from being defectively bonded.

  In addition, since power is supplied to the ceramic heater 9 by contacting a plate terminal 721 of the power supply means 720 with the electrode 92 formed on the ceramic heater 9, wiring for power supply is provided as in the conventional case. Compared with a configuration in which the ceramic heater 9 is directly connected by solder or the like, the power supply wiring does not vibrate together with the resonator 7 and does not affect the vibration characteristics of the resonator 7. Since the plate terminal 721 is in contact with the electrode 92 formed on the ceramic heater 9 to supply power, the resonator 7 vibrates ultrasonically independently of the plate terminal 721 of the power supply means 720. The supply wiring is not damaged, and the durability of the apparatus can be improved.

  In the “joining operation example (1)”, the position of the resonator unit 26 is set in advance from the contact position Z0 according to the heights of the metal melting electrodes 20a and 22a formed on the chip 20 and the substrate 22. The time until the completion position Z1, which is the height at which the chip 20 and the substrate 22 can be joined, is defined as the first time T1 and the second time T2 (T1 = T2) which are the same time width. The first time T1 and the second time are set by experimentally obtaining in advance optimum values corresponding to the types of objects to be joined, as will be described later in “Joint operation examples (2) to (7)”. May be. In FIG. 6, ZL is a limit position that may cause the chip 20 and the substrate 22 to be destroyed when the resonator unit 26 moves beyond the completion position Z1.

  The pressure P2 applied to the chip 20 and the substrate 22 by the resonator unit 26 may be appropriately set according to the material, shape, size, etc. of the metal melting electrodes 20a, 22a. The pressing force P2 may be determined by applying pressure, or the pressing force P2 may be set as a theoretical value calculated from the hardness of the material of the metal melting electrodes 20a and 22a. The point is that the pressurizing force P2 may be used as long as the molten metal electrodes 20a and 22a can be reliably pressed and crushed and the molten metal electrodes 20a and 22a are not destroyed by excessive pressure.

  Further, the set speed of the resonator unit 26 when pressurizing the chip 20 and the substrate 22 prevents the metal melting electrodes 20a and 22a from being rapidly crushed and applies ultrasonic vibrations uniformly to the metal melting electrodes 20a and 22a. Any speed can be used. For example, the value of the set speed can be calculated as a theoretical value from the height, shape, etc. of the metal melting electrodes 20a, 22a.

  Further, when the bonding area between the molten metal electrodes 20a and 22a (the actual bonded portion) increases, the bonding force between the chip 20 and the substrate 22 becomes stronger. Therefore, when the ultrasonic vibration energy is constant, the chip 20 gradually. And the substrate 22 have a small amplitude (“slip”). Therefore, in the control device 31, by increasing the ultrasonic vibration energy applied so that the amplitude is constant between the chip 20 and the substrate 22, a constant amplitude can always be obtained at the bonding interface, so that the bonding can be performed better. It can be performed.

  As described above, the amplitude of the chip 20 and the substrate 22 is detected as a method of always setting the actual amplitude (“slip” between the chip 20 and the substrate 22) at the bonded interface to be bonded to an optimum value for bonding. A plurality of amplitude detectors 33 may be provided, and the magnitude of ultrasonic vibration energy applied may be controlled so that the amplitude between the chip 20 and the substrate 22 has an arbitrary constant value. Further, the amplitude of the chip 20 or the substrate 22 may be detected by the amplitude detector 33, and the magnitude of the ultrasonic vibration energy to be applied may be controlled so that one of the amplitudes is an arbitrary constant value.

  Further, in order to obtain the amplitude between the chip 20 and the substrate 22, there is a method in which a plurality of amplitude detectors 33 are provided and the amplitudes of the chip 20 and the substrate 22 are measured simultaneously. After measuring the amplitude of 20 and the substrate 22 in order, the amplitude between the chip 20 and the substrate 22 can also be measured by calculating the amplitude difference in a state where the time axis is shifted and the time axis is overlapped. If the chip 20 and the substrate 22 are securely held by the resonator 7 and the stage 10, it is only necessary to detect the amplitude of either the chip 10 or the substrate 22.

  As the amplitude detector 33, any known detector such as an eddy current type, a capacitance type, a light irradiation type, or a sound wave detection type may be used. By using these means, for example, cost reduction can be achieved as compared with the case of using a laser Doppler measuring device.

2. Joining operation example (2)
The “joining operation example (2)” will be described with reference to FIG. FIG. 7 is a diagram showing an operation example (2) of the ultrasonic vibration joining process. This “joining operation example (2)” differs from the above “joining operation example (1)” in that the timing at which the chip 20 and the substrate 22 are subjected to pulse heat heating is different. (1) ”. Therefore, only the points different from the “joining operation example (1)” will be described below, and other configurations and operations will be denoted by the same reference numerals, and description of the configurations and operations will be omitted. Similarly, in the “joining operation examples (3) to (7)” to be subsequently described, the same reference numerals are given to the same configurations and operations as those in the “joining operation example (1)”, and the configurations and A description of the operation is omitted.

  As shown in FIG. 7, in this “joining operation example (2)”, during a second time T2 from time t2 when the resonator unit 26 reaches the contact position Z0 to time t4 when it reaches the completion position Z1, An ultrasonic vibration applying step for applying ultrasonic vibration is executed. In addition, the pulse heat heating process is performed during a first time T1 from time t3 after a predetermined time has elapsed from time t2 to time t4 when reaching the completion position Z1.

  Subsequently, at time t4, the suction of the chip 20 by the resonator 7 is released, and the return movement of the resonator unit 26 from the completion position Z1 to the standby position ZH is started. Then, at time t5 when the resonator unit 26 reaches the standby position ZH, the movement of the resonator unit 26 is stopped. Thereafter, in a state where the chip 20 is mounted, the substrate 22 held on the stage 10 is discharged to the substrate transfer conveyor 17 by the substrate transfer device 16, and a series of joining operations is completed.

  In the “joining operation example (2)”, the same effect as described above can be obtained.

3. Joining operation example (3)
The “joining operation example (3)” will be described with reference to FIG. FIG. 8 is a diagram showing an operation example (3) of the ultrasonic vibration bonding process. This “joining operation example (3)” differs from the above “joining operation example (1)” in that the timing at which ultrasonic vibration is applied to the chip 20 and the substrate 22 is different, and the chip 20 and the substrate 22 are pulsed. The timing and temperature for heat heating are different.

  As shown in FIG. 8, in the “joining operation example (3)”, the second time T2 from the time t2 when the resonator unit 26 reaches the contact position Z0 to the time t3 before reaching the completion position Z1. Meanwhile, an ultrasonic vibration application step for applying ultrasonic vibration is executed. Further, during the first time T1 from time t3 to time t4 when reaching the completion position Z1, the pulse heat heating process is performed with the bonding temperature Hj as the melting point Hm of the metal melting electrodes 20a and 22a.

  Subsequently, at time t4, the suction of the chip 20 by the resonator 7 is released, and the return movement of the resonator unit 26 from the completion position Z1 to the standby position ZH is started. Then, at time t5 when the resonator unit 26 reaches the standby position ZH, the movement of the resonator unit 26 is stopped. Thereafter, in a state where the chip 20 is mounted, the substrate 22 held on the stage 10 is discharged to the substrate transfer conveyor 17 by the substrate transfer device 16, and a series of joining operations is completed.

  Also in this “joining operation example (3)”, the chip 20 and the substrate 22 can be satisfactorily joined. In addition, since the time for heating the chip 20 and the substrate 22 by pulse heat (first time T1) is short, the metal melting electrodes 20a and 22a are not excessively heated and melted.

4). Joining operation example (4)
The “joining operation example (4)” will be described with reference to FIG. 9. FIG. 9 is a diagram showing an operation example (4) of the ultrasonic vibration bonding process. This “joining operation example (4)” differs from the above “joining operation example (1)” in that the timing at which ultrasonic vibration is applied to the chip 20 and the substrate 22 is different, and the chip 20 and the substrate 22 are pulsed. The timing and temperature for heat heating are different.

  As shown in FIG. 9, in the “joining operation example (4)”, the second time T2 from the time t2 when the resonator unit 26 reaches the contact position Z0 to the time t3 before reaching the completion position Z1. Meanwhile, an ultrasonic vibration application step for applying ultrasonic vibration is executed. In addition, the pulse heat heating process is performed from the immediately before time t2 with the bonding temperature Hj as the melting point Hm of the metal melting electrodes 20a and 22a for the first time T1.

  Subsequently, at time t4, the suction of the chip 20 by the resonator 7 is released, and the return movement of the resonator unit 26 from the completion position Z1 to the standby position ZH is started. Then, at time t5 when the resonator unit 26 reaches the standby position ZH, the movement of the resonator unit 26 is stopped. Thereafter, in a state where the chip 20 is mounted, the substrate 22 held on the stage 10 is discharged to the substrate transfer conveyor 17 by the substrate transfer device 16, and a series of joining operations is completed.

  Also in this “joining operation example (4)”, the chip 20 and the substrate 22 can be satisfactorily joined. In addition, since the time for heating the chip 20 and the substrate 22 by pulse heat (first time T1) is short, the metal melting electrodes 20a and 22a are not excessively heated and melted.

5. Joining operation example (5)
The “joining operation example (5)” will be described with reference to FIG. FIG. 10 is a diagram showing an operation example (5) of the ultrasonic vibration bonding process. This “joining operation example (5)” differs from the above “joining operation example (1)” in that the timing at which ultrasonic vibration is applied to the chip 20 and the substrate 22 is different, and the chip 20 and the substrate 22 are pulsed. It is a point in which the timing which heat-heats differs.

  As shown in FIG. 10, in the “joining operation example (5)”, the second time T2 from the time t2 when the resonator unit 26 reaches the contact position Z0 to the time t3 before reaching the completion position Z1. Meanwhile, an ultrasonic vibration application step for applying ultrasonic vibration is executed. In addition, the pulse heat heating process is performed at the bonding temperature Hj lower than the melting point Hm of the metal melting electrodes 20a and 22a for the first time T1 immediately before time t2.

  Subsequently, at time t4, the suction of the chip 20 by the resonator 7 is released, and the return movement of the resonator unit 26 from the completion position Z1 to the standby position ZH is started. Then, at time t5 when the resonator unit 26 reaches the standby position ZH, the movement of the resonator unit 26 is stopped. Thereafter, in a state where the chip 20 is mounted, the substrate 22 held on the stage 10 is discharged to the substrate transfer conveyor 17 by the substrate transfer device 16, and a series of joining operations is completed.

  Also in this “joining operation example (5)”, the chip 20 and the substrate 22 can be satisfactorily joined. The second time T2 during which the ultrasonic vibration is applied may be set in advance to such an extent that the joining surfaces of the metal melting electrodes 20a and 22a are heated to a temperature sufficient for joining by frictional heat.

6). Joining operation example (6)
The “joining operation example (6)” will be described with reference to FIG. FIG. 11 is a diagram showing an operation example (6) of the ultrasonic vibration bonding process. This “joining operation example (6)” is different from the “joining operation example (1)” described above in that the timing of applying ultrasonic vibration to the chip 20 and the substrate 22 is different.

  As shown in FIG. 11, in the “joining operation example (6)”, the second time T2 from the time t2 when the resonator unit 26 reaches the contact position Z0 to the time t3 before reaching the completion position Z1. Meanwhile, an ultrasonic vibration application step for applying ultrasonic vibration is executed. Further, during the first time T1 from time t2 to time t4, the pulse heat heating process is performed at the bonding temperature Hj lower than the melting point of the metal melting electrodes 20a and 22a.

  Subsequently, at time t4, the suction of the chip 20 by the resonator 7 is released, and the return movement of the resonator unit 26 from the completion position Z1 to the standby position ZH is started. Then, at time t5 when the resonator unit 26 reaches the standby position ZH, the movement of the resonator unit 26 is stopped. Thereafter, in a state where the chip 20 is mounted, the substrate 22 held on the stage 10 is discharged to the substrate transfer conveyor 17 by the substrate transfer device 16, and a series of joining operations is completed.

  Also in the “joining operation example (6)”, the chip 20 and the substrate 22 can be satisfactorily joined. The second time T2 during which the ultrasonic vibration is applied may be set in advance to such an extent that the joining surfaces of the metal melting electrodes 20a and 22a are heated to a temperature sufficient for joining by frictional heat.

7). Joining operation example (7)
The “joining operation example (7)” will be described with reference to FIG. FIG. 12 is a diagram showing an operation example (7) of the ultrasonic vibration joining process. This “joining operation example (7)” is different from the above “joining operation example (1)” in that the timing of applying ultrasonic vibration to the chip 20 and the substrate 22 is different.

  As shown in FIG. 12, in this “joining operation example (7)”, at an arbitrary timing within the time from time t2 when the resonator unit 26 reaches the contact position Z0 to time t3 when the resonator unit 26 reaches the completion position Z1. During the second time T2, an ultrasonic vibration applying step for applying ultrasonic vibration is executed. Further, during the first time T1 from the time t2 to the time t3, the pulse heat heating process is performed at the bonding temperature Hj lower than the melting point Hm of the metal melting electrodes 20a and 22a.

  Subsequently, at time t3, the suction of the chip 20 by the resonator 7 is released, and the return movement of the resonator unit 26 is started from the completion position Z1 to the standby position ZH. Then, at time t4 when the resonator unit 26 reaches the standby position ZH, the movement of the resonator unit 26 is stopped. Thereafter, in a state where the chip 20 is mounted, the substrate 22 held on the stage 10 is discharged to the substrate transfer conveyor 17 by the substrate transfer device 16, and a series of joining operations is completed.

  Also in this “joining operation example (7)”, the chip 20 and the substrate 22 can be satisfactorily joined. The second time T2 during which the ultrasonic vibration is applied may be set in advance to such an extent that the joining surfaces of the metal melting electrodes 20a and 22a are heated to a temperature sufficient for joining by frictional heat.

  As described above, in this embodiment, the preset first time T1, pulse heat heating for raising the temperature of the ceramic heater 9, and the thermal conductivity of the resonator 7 are about 7.5 W / m ° C. or less. Therefore, even if a heat shut-off member is not provided between the resonator 7 and the ceramic heater 9 as in the prior art, heat transfer from the ceramic heater 9 to the resonator 7 is suppressed, and the temperature of the resonator 7 rises and heats up. Since it does not expand, the resonator 7 can be used in common at any junction temperature Hj, and the efficiency is high. Further, since the heat generated in the ceramic heater 9 is difficult to conduct to the resonator 7, the ceramic heater 9 can be efficiently heated even by heating the ceramic heater 9 by pulse heat heating. 9 can be raised to the joining temperature Hj in a short time, and the joining operation can be efficiently performed with a simple configuration without using a heat blocking member or the like.

  Next, the features of the present embodiment will be described with reference to FIG. FIG. 13 is a diagram showing the temperature rise characteristics of the heater 9 and the resonator 7. As shown in FIG. 13, when the resonator 7 is made of a titanium alloy (6Al-4V), when the power supply to the ceramic heater 9 is started and the temperature rise of the ceramic heater 9 is started, resonance occurs. The temperature of the vessel 7 hardly rises, and the heating of the ceramic heater 9 to about 150 ° C. is completed in about 5 seconds.

  On the other hand, when the resonator 7 is made of iron (SKD11, about 60.0 W / m ° C.) used in a conventional metal bonding apparatus using ultrasonic vibration, as shown in FIG. When power supply to the heater 9 is started and the temperature rise of the ceramic heater 9 is started, heat transfer from the ceramic heater 9 to the resonator 7 causes the temperature of the resonator 7 to rise, and the resonator 7 It takes about 60 seconds to raise the temperature to about 150 ° C.

  When the resonator 7 is made of stainless steel (about 25 W / m ° C.), the power supply to the ceramic heater 9 is started and the temperature rise of the ceramic heater 9 is started as shown in FIG. Then, the temperature of the resonator 7 does not rise so much, the temperature rise of the ceramic heater 9 to about 150 ° C. is completed in about 12 seconds, and the same effect as when the resonator 7 is made of a titanium alloy can be obtained. In addition, the chip 20 and the substrate 22 can be efficiently joined.

  Further, in this embodiment, the chip 20 and the substrate 22 are bonded to each other by the bonding energy that is efficiently generated by using two energies of the energy by the ultrasonic vibration and the energy by the pulse heat heating. Or a MEMS device is formed. Thus, the device can be formed by bonding the chip 20 and the substrate 22 with less ultrasonic vibration energy and without excessive heating. Therefore, by applying excessive bonding energy for bonding the chip 20 and the substrate 22 at the time of device creation, it is possible to prevent the device to be created from being damaged and to provide a highly accurate device.

In this embodiment, the case where the objects to be bonded are the chip 20 and the substrate 22 having the metal melted electrodes 20a and 22a has been described, but examples of the objects to be bonded include a semiconductor such as Si, SiO ₂ , and glass. A metal fused electrode or a wiring pattern may be formed on a wafer or chip formed of lithium ion oxide, oxide single crystal (LT), ceramic oxide, etc., and these may be joined. be able to. In addition to the above, a resin substrate, a film substrate, a chip obtained by dicing these substrates, or the like may be used as an object to be bonded.

  Further, the object to be bonded may be in any form such as a substrate, a wafer, a chip obtained by dicing the substrate and a wafer, and if the material can be bonded by applying ultrasonic vibration and heating, Of course, the entire surface of one surface of the object to be joined may be joined instead of joining the metal melting electrodes 20a and 22a. Moreover, you may join directly the to-be-joined object in which the metal fusion | melting electrodes 20a and 22a were formed to the joining surface of the other to-be-joined object in which the metal fusion | melting electrodes 20a and 22a are not formed.

  Moreover, the shape of the metal melting electrodes 20a and 22a may be a plurality of individual bump shapes, and a certain region between the objects to be joined is connected in a contour shape so as to be sealed between the objects to be joined. The shape may be a pad shape. As the material for forming the metal melting electrodes 20a and 22a, a solder having a melting point of about 450 ° C. or lower is optimal, but any material having a melting point of 450 ° C. or lower may be used.

  For example, the metal melting electrode may be formed of Ag—Sn, Au—Sn, Sn—Cu, In—Pd, or the like, which is an alloy having a melting point of about 450 ° C. or less. Further, a metal molten electrode can also be formed by Sn (melting point, about 232 ° C.), In (melting point, about 157 ° C.), Bi (melting point, about 271 ° C.), or the like. With such a configuration, it is possible to remove a deposit layer such as an organic substance or an oxide film attached to the surface of the metal molten electrode by a frictional force by applying ultrasonic vibration, and the melting point of the metal molten electrode is about 450. Since the temperature is as low as ℃ or lower, the object to be joined on which the metal molten electrode is formed can be bonded by performing low-temperature heating after removing the adhered layer on the surface of the metal molten electrode.

  Further, instead of the above-described metal melting electrode made of a material having a melting point of 450 ° C. or lower, ITO (Indium-Tin-Oxide) having a melting point exceeding 450 ° C. or Au (melting point) , About 1064 ° C.), Al (melting point, about 660 ° C.), Cu (melting point, about 1083 ° C.), Ni (melting point, about 1453 ° C.), Ag (melting point, about 962 ° C.), etc. The metal electrode may be formed in a pad shape or the like. Even in such a configuration, it is possible to efficiently join the objects to be joined on which the metal electrodes are formed by applying ultrasonic vibration to pulse heat heating.

  As described above, a metal melting electrode or a metal electrode can be formed in various shapes with various materials on the bonding surface of the object to be bonded, and the metal melting electrode formed on the bonding surface of one of the objects to be bonded and The metal electrode formed on the bonding surface of the other object to be bonded can also be efficiently bonded by applying ultrasonic vibration to pulse heat heating.

  Moreover, as a structure of a joining apparatus, as shown in FIG. 1, a to-be-joined object may be overlap | superposed and joined in the up-down direction (Z direction), and it overlaps and joins in the left-right direction substantially orthogonal to a Z direction. It may be configured. Further, three or more objects to be joined may be polymerized and joined.

  In addition, “slip” generated between the bonding surfaces of the objects to be bonded is applied with an amplitude necessary for bonding the objects to be bonded by removing an oxide film or the like on the bonding surfaces under an appropriate pressure. This is slippage at the joining interface. The magnitude of this “slip” varies depending on the material and area of the joint surface, but can be set to an amplitude of about 0.1 μm to 0.5 μm as an example.

  The present invention is not limited to the above-described embodiment, and various modifications other than those described above can be made without departing from the spirit of the present invention. For example, an electrostatic chuck means may be provided on the ceramic heater 9 and the stage 10 to attract the chip 20 and the substrate 22. As shown in FIG. 14, by embedding electrostatic chuck electrodes 93 and 94 in the ceramic heater 9, the chip 20 can be adsorbed by electrostatic force.

  With such a configuration, the chip 20 (one object to be bonded) can be held in vacuum by the electrostatic chuck means, so that the chip 20 and the substrate 22 can be bonded in vacuum. Moreover, since impurities such as organic substances and oxide films are prevented from adhering to the chip 20 and the substrate 22, the chip 20 and the substrate 22 can be favorably bonded. FIG. 14 is an explanatory diagram of the principle of the electrostatic chuck. Further, the configuration of the electrostatic chuck means on the stage 10 side is the same as the principle of the electrostatic chuck in the ceramic heater 9 shown in FIG. 14, and therefore description of the configuration and operation using the drawings is omitted.

  Further, the holding mechanism for holding the object to be bonded to the ceramic heater 9 or the stage 10 is not limited to the holding mechanism using the above-described vacuum chucking or electrostatic chuck, and a well-known holding mechanism such as a mechanical chuck mechanism or magnetic chucking is employed. May be.

  In the above embodiment, the stage 10 side has an alignment function and the resonator unit 26 side has a vertical drive function. However, the alignment function and the vertical drive function are arranged on the stage 10 side and the resonator unit 26 side. You may combine and you may comprise so that it may overlap. Moreover, although the resonator part 26 and the stage 10 are arrange | positioned in the up-down direction (arrow Z direction), as an arrangement direction, it is not limited to this, The left-right direction and the diagonal direction may be sufficient.

  In the above-described embodiment, the bonding temperature Hj is set based on the melting point Hm (about 183 ° C.) of the lead-tin solder. However, the bonding temperature Hj is not limited to this, and the type of the bonding object or the bonding object is What is necessary is just to set to an optimal value according to the kind of formed metal fusion electrode (metal electrode).

  Moreover, the timing which performs an ultrasonic vibration application process and a pulse heat heating process is not restricted to the timing mentioned as an example in above-mentioned "joining operation example (1)-(7)", The to-be-joined object which is a joining object Depending on the type, it can be executed at an optimal timing as appropriate.

7 Resonator 8 Vibrator 9 Ceramic heater (heating holding means)
92 Electrode 10 Stage 20 Chip (Substrate)
22 Substrate (Substrate)
20a, 22a Metal melting electrode 31 Control device (vibration control means, heating control means)
720 Power supply means 721 Flat terminal (terminal)
93, 94 Electrostatic chuck electrode (electrostatic chuck means)
Hm Melting point Hj Junction temperature Hw Standby temperature T1 First time T2 Second time

Claims (2)

A resonator made of a material having a thermal conductivity of 25.0 W / m ° C. or less, which is ultrasonically vibrated by vibration generated by the vibrator ;
A ceramic heater that is attached to the maximum amplitude portion of the resonator along the circumferential direction and holds the object to be heated in a heatable manner;
A stage disposed opposite to the resonator and sandwiching an object to be bonded with the ceramic heater;
Clamping means for clamping and supporting the resonator with the ceramic heater facing the stage;
Power supply means having a terminal for supplying power to the ceramic heater;
With
The terminal of the power supply means is in contact with a power supply electrode formed on the surface of the ceramic heater in a state where the resonator is supported by the clamp means, and is connected to the power supply means. An ultrasonic vibration bonding apparatus that allows ultrasonic vibration of the resonator independent of the terminal . A plurality of the ceramic heaters are attached along the circumferential direction of the resonator,
The ceramic heater to be sandwiched between the stage and the stage by rotation of the resonator in a state where the terminal of the power supply means and the power supply electrode of the ceramic heater are separated from each other. The ultrasonic vibration bonding apparatus according to claim 1, wherein the replacement is performed .

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