JP5080321B2 - Power module - Google Patents

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JP5080321B2
JP5080321B2 JP2008061270A JP2008061270A JP5080321B2 JP 5080321 B2 JP5080321 B2 JP 5080321B2 JP 2008061270 A JP2008061270 A JP 2008061270A JP 2008061270 A JP2008061270 A JP 2008061270A JP 5080321 B2 JP5080321 B2 JP 5080321B2
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phase
opening
terminal
bridge
power conversion
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JP2009219273A (en
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康志 根本
虎壽 宮本
一樹 森田
光雄 三留
薫 金子
雄一郎 水野
隆司 真島
裕司 佐々木
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IHI Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19107—Disposition of discrete passive components off-chip wires

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Description

本発明は、電力変換に用いられるパワーモジュールに関する。   The present invention relates to a power module used for power conversion.

近年、電気自動車の開発等を背景に、パワーモジュールはますます高度化、大電力化、高信頼性を要求されるようになってきている。パワーモジュールには、パワーデバイスチップとその制御部を一体化したものがある（例えば特許文献１〜４）。   In recent years, against the background of the development of electric vehicles and the like, power modules are increasingly required to have higher sophistication, higher power, and higher reliability. Some power modules integrate a power device chip and its control unit (for example, Patent Documents 1 to 4).

半導体スイッチング素子等で構成されたインバーター回路等の電力変換回路を搭載した電力変換基板はその放熱のために、放熱板を備えることが通例である。近年、特許文献５に記載されるようなアルミ板にセラミック層を接合した基板が、放熱性が優れる等のため、電力変換基板のベースとして好んで利用されている。   A power conversion board on which a power conversion circuit such as an inverter circuit composed of semiconductor switching elements or the like is mounted is usually provided with a heat dissipation plate for heat dissipation. In recent years, a substrate in which a ceramic layer is bonded to an aluminum plate as described in Patent Document 5 is preferably used as a base of a power conversion substrate because of its excellent heat dissipation.

また、特許文献６に記載されるように、電力変換基板と、電力変換回路を駆動する駆動回路を搭載した駆動基板との間に、電磁ノイズを遮蔽する等ための遮蔽板が配置されることが行われる。   In addition, as described in Patent Document 6, a shielding plate for shielding electromagnetic noise or the like is disposed between the power conversion board and a drive board on which a drive circuit that drives the power conversion circuit is mounted. Is done.

一方、特許文献７には、３相の電流を検出するためのカレント・トランス（ＣＴ）を３相のそれぞれに１つずつ設け、これを内部に設けて小型化したパワーモジュールが記載されている。カレント・トランスは電流が流れる導線を囲むリング構造を有するのでスペースをとる。そのため、３つのカレント・トランスを効率よく内部に配置することは困難と推測される。
しかし、特許文献８には、３相のうち２相にカレント・トランスを設けることが記載されている。
特開平９−２３３８５３号公報 特開２００２−０２７６６５号公報 特開２００３−１２５５８８号公報 特開２００４−３０４９２６号公報 特開２００４−１１５３３７号公報 特開平２−２９００９９号公報 特開平９−６５６６２号公報 特開２００６−１８４２４１号公報 On the other hand, Patent Document 7 describes a power module in which a current transformer (CT) for detecting a three-phase current is provided for each of the three phases, and this is provided inside to reduce the size of the power module. . Since the current transformer has a ring structure surrounding a conducting wire through which a current flows, space is taken up. Therefore, it is estimated that it is difficult to efficiently arrange the three current transformers inside.
However, Patent Document 8 describes that a current transformer is provided in two of the three phases.
Japanese Patent Laid-Open No. 9-233853 JP 2002-027665 A JP 2003-125588 A JP 2004-304926 A JP 2004-115337 A JP-A-2-290099 JP-A-9-65662 JP 2006-184241 A

上述した要素のほか、より高度にパワーモジュールを構成するためには、電力変換回路上の温度検出用ＩＣ、前記駆動回路を制御する制御回路を搭載した制御基板、カレント・トランスの検出値を前記制御回路にフィードバックする経路等を構成することが要請される。
また、電力変換回路の入出力端子や、各基板間の配線材、半導体スイッチング素子間の配線材などを効率よく配置し、コンパクトかつ信頼性の高いパワーモジュールを構成することが望まれる。 In addition to the elements described above, in order to configure a power module at a higher level, a temperature detection IC on a power conversion circuit, a control board on which a control circuit for controlling the drive circuit is mounted, and a detected value of a current transformer It is required to configure a path for feeding back to the control circuit.
Also, it is desired to efficiently arrange input / output terminals of power conversion circuits, wiring materials between substrates, wiring materials between semiconductor switching elements, and the like to form a compact and highly reliable power module.

本発明は以上の従来技術に鑑みてなされたものであって、電力変換基板、駆動基板及び制御基板の３つの基板その他を、効率良くコンパクトに一体に備え、信頼性の高いパワーモジュールを提供することを課題とする。   The present invention has been made in view of the above prior art, and provides a highly reliable power module that is provided with a power conversion board, a driving board, and a control board, etc., in an integrated manner efficiently and compactly. This is the issue.

以上の課題を解決するための請求項１記載の発明は、Ｕ相，Ｖ相，Ｗ相の３相ブリッジ型の電力変換回路が絶縁材を介して搭載された放熱板と、
前記電力変換回路の上方に配置され、前記電力変換回路を駆動する駆動回路と駆動回路電源部とが搭載された駆動基板と、
前記電力変換回路と前記駆動基板との間を仕切る遮蔽板と、
前記駆動基板の上方に配置され、前記駆動基板を制御する制御基板と、
前記電力変換回路、前記駆動基板及び前記制御基板を囲む四辺形の枠状で一端が前記放熱板に固定された外囲ケースと、
前記外囲ケースの第１辺部に埋没保持された前記電力変換回路の陽極端子及び陰極端子と、
前記外囲ケースの第１辺部に相対する第２辺部に保持されたＵ相，Ｖ相，Ｗ相の各端子と、
３相のうちいずれか１相の電流を検出する第１カレント・トランス基板と、
他の１相の電流を検出する第２カレント・トランス基板と、
前記外囲ケースの他端の開口を覆う蓋とを備え、
前記電力変換回路のＵ相ブリッジ部、Ｖ相ブリッジ部及びＷ相ブリッジ部は、前記第１辺部に沿った一方向に所定の順で並んで配置され、
Ｕ相，Ｖ相，Ｗ相の各端子は、前記一方向に前記所定の順で並んで配置され、
前記外囲ケースの前記放熱板に合わされる一端側には、各一のブリッジ部を囲む第１開口、第２開口及び第３開口が、前記第１辺部側に偏在し、前記一方向に第１開口、第２開口、第３開口の順で並んで形成され、
前記第１開口と前記第２辺部との間の前記外囲ケースの内側角部に、３相のうちいずれか１相のブリッジ部と同相の前記端子との間を接続する導体及びこれを囲むリング部を有した前記第１カレント・トランス基板が配置され、
前記第３開口と前記第２辺部との間の前記外囲ケースの内側角部に、他の１相のブリッジ部と同相の前記端子との間を接続する導体及びこれを囲むリング部を有した前記第２カレント・トランス基板が配置され、
前記駆動基板の前記第２辺部側の端部には、前記第１カレント・トランス基板と前記第２カレント・トランス基板との間に配置される凸状部が形成され、
各相のブリッジ部を駆動する駆動回路は、駆動するブリッジ部の上部に配置されるとともに、前記駆動回路電源部の少なくとも一部は前記凸状部に配置されてなるパワーモジュールである。 The invention according to claim 1 for solving the above-mentioned problems is a heat sink in which a U-phase, V-phase, and W-phase three-phase bridge type power conversion circuit is mounted via an insulating material,
A drive board disposed above the power conversion circuit and mounted with a drive circuit for driving the power conversion circuit and a drive circuit power supply unit;
A shielding plate that partitions between the power conversion circuit and the drive board;
A control board disposed above the drive board for controlling the drive board;
An enclosing case whose one end is fixed to the heat sink in a quadrilateral frame shape surrounding the power conversion circuit, the drive board and the control board;
An anode terminal and a cathode terminal of the power conversion circuit embedded and held in the first side of the outer case;
U-phase, V-phase, and W-phase terminals held on the second side opposite to the first side of the outer case;
A first current transformer substrate for detecting a current of any one of the three phases;
A second current transformer substrate for detecting another one-phase current;
A lid covering the opening at the other end of the outer case,
The U-phase bridge part, the V-phase bridge part, and the W-phase bridge part of the power conversion circuit are arranged in a predetermined order along one direction along the first side part,
The U-phase, V-phase, and W-phase terminals are arranged in the predetermined order in the one direction,
A first opening, a second opening, and a third opening that surround each one of the bridge portions are unevenly distributed on the side of the first side, and are arranged in the one direction. Formed in the order of the first opening, the second opening, the third opening,
A conductor that connects between the bridge portion of any one of the three phases and the terminal in phase with the inner corner of the outer case between the first opening and the second side, and The first current transformer substrate having a surrounding ring portion is disposed;
On the inner corner of the outer case between the third opening and the second side, a conductor connecting the other one-phase bridge portion and the terminal in the same phase and a ring portion surrounding the conductor The second current transformer substrate having is disposed;
A convex portion disposed between the first current transformer substrate and the second current transformer substrate is formed at an end of the driving substrate on the second side portion side,
The drive circuit that drives the bridge portion of each phase is a power module that is disposed above the bridge portion that is driven, and at least a part of the drive circuit power supply portion is disposed on the convex portion.

請求項２記載の発明は、前記外囲ケースの前記第１開口と前記第２開口との間の部分、前記第２開口と前記第３開口との間の部分にそれぞれ電気接続ピンが立設固定され、これらの電気接続ピンによって、前記電力変換回路と前記駆動回路との全部又は一部の電気接続がなされている請求項１に記載のパワーモジュールである。   According to a second aspect of the present invention, electrical connection pins are provided upright at a portion between the first opening and the second opening and at a portion between the second opening and the third opening, respectively. 2. The power module according to claim 1, wherein the power conversion circuit and the drive circuit are all or partly electrically connected by the electrical connection pins.

請求項３記載の発明は、前記外囲ケースに立設固定された電気接続ピンによって、前記駆動回路と前記制御基板とが電気接続してなる請求項２に記載のパワーモジュールである。   A third aspect of the present invention is the power module according to the second aspect, wherein the drive circuit and the control board are electrically connected by electrical connection pins that are erected and fixed to the outer case.

請求項４記載の発明は、Ｖ相ブリッジ部の陽極側に接続される半導体スイッチング素子の温度を検出する温度検出用ＩＣを当該半導体スイッチング素子と同じ絶縁材上であって、前記第２開口に収まる範囲に有する請求項１に記載のパワーモジュールである。   According to a fourth aspect of the present invention, there is provided a temperature detection IC for detecting the temperature of the semiconductor switching element connected to the anode side of the V-phase bridge portion on the same insulating material as the semiconductor switching element, and in the second opening. The power module according to claim 1, wherein the power module falls within a range.

請求項５記載の発明は、前記陽極端子及び陰極端子が、Ｕ相、Ｖ相、Ｗ相毎に独立して設けられ、Ｕ相、Ｖ相、Ｗ相のそれぞれにおいて、陽極端子と陰極端子とが、互いに一定の間隔を保持して配置される並行部を有した平板状に構成され、互いに外部端子部と内部端子部とが前記第１辺部に沿って逆位置に入れ替わって配置されている請求項１に記載のパワーモジュールである。   According to a fifth aspect of the present invention, the anode terminal and the cathode terminal are provided independently for each of the U phase, the V phase, and the W phase. In each of the U phase, the V phase, and the W phase, the anode terminal and the cathode terminal Is configured in a flat plate shape having parallel portions that are arranged at a constant interval from each other, and the external terminal portion and the internal terminal portion are arranged so as to be reversed at the opposite positions along the first side portion. The power module according to claim 1.

請求項６記載の発明は、Ｕ相、Ｖ相、Ｗ相の各相においてブリッジ部の陽極側に接続される半導体スイッチング素子を設置する絶縁材と、陰極側に接続される半導体スイッチング素子を設置する絶縁材とが異なる領域に分離して配置され、両領域間の電気的往復を接続する２つの導体を備え、この２つの導体が互いに一定の間隔を保持して配置される並行部を有した平板状の二重橋構造を構成してなる請求項１に記載のパワーモジュールである。   The invention according to claim 6 is provided with an insulating material for installing a semiconductor switching element connected to the anode side of the bridge portion in each phase of U phase, V phase, and W phase, and a semiconductor switching element connected to the cathode side The insulating material to be separated is arranged in different regions, and has two conductors that connect the electric reciprocation between the two regions, and the two conductors have a parallel portion that is arranged at a constant distance from each other. The power module according to claim 1, comprising a flat plate-like double bridge structure.

請求項７記載の発明は、前記所定の順がＵ相、Ｖ相、Ｗ相の順であることを特徴とする請求項１に記載のパワーモジュールである。   The invention according to claim 7 is the power module according to claim 1, wherein the predetermined order is the order of the U phase, the V phase, and the W phase.

本発明によれば、放熱板上に搭載された電力変換回路と、遮蔽板と、駆動回路及び駆動回路電源部を有する駆動基板と、制御基板と、カレント・トランスとを効率良くコンパクトに一体に備え、信頼性の高いパワーモジュールを構成できる。   According to the present invention, a power conversion circuit mounted on a heat sink, a shielding plate, a drive board having a drive circuit and a drive circuit power supply unit, a control board, and a current transformer are integrated efficiently and compactly. Equipped with a highly reliable power module.

請求項２記載の発明によれば、電力変換回路と駆動回路との電気接続には外囲ケースの第１開口と第２開口との間の部分、第２開口と第３開口との間の部分に立設固定された電気接続ピンが利用され、各相毎に近接した位置で効率よく配線することができる。   According to the second aspect of the present invention, the electrical connection between the power conversion circuit and the drive circuit includes a portion between the first opening and the second opening of the outer case, and between the second opening and the third opening. Electrical connection pins that are erected and fixed to the portions are used, and wiring can be efficiently performed at positions close to each phase.

請求項３記載の発明のよれば、駆動回路と制御基板との電気接続に、電力変換回路と駆動回路との電気接続と同じく、外囲ケースに立設固定された電気接続ピンが利用される。   According to the third aspect of the present invention, the electrical connection pin that is erected and fixed to the outer case is used for the electrical connection between the drive circuit and the control board, similarly to the electrical connection between the power conversion circuit and the drive circuit. .

請求項４記載の発明のよれば、温度検出用ＩＣの温度測定対象を、真ん中で高電位のため最も高温化しやすいＶ相ブリッジ部の陽極側に接続される半導体スイッチング素子に絞ることで、簡素な構成で高温限界を検出する温度検出機能を装備することができる。   According to the fourth aspect of the present invention, the temperature measurement target of the temperature detection IC is simply limited to the semiconductor switching element connected to the anode side of the V-phase bridge portion that is most likely to be heated to a high potential because of the high potential in the middle. It can be equipped with a temperature detection function that detects the high temperature limit with a simple configuration.

請求項５記載の発明のよれば、陽極端子及び陰極端子をＵ相、Ｖ相、Ｗ相毎に独立して設けることにより、外囲ケースの第１辺部をコンパクトにまとめることができるとともに、陽極端子と陰極端子とが、互いに外部端子部と内部端子部とが第１辺部に沿って逆位置に入れ替わって配置されることにより、並行部を形成することができ、この並行部で逆方向平行電流による配線インダクタンスの低減化が図れる。   According to the invention of claim 5, by providing the anode terminal and the cathode terminal independently for each of the U phase, the V phase, and the W phase, the first side of the outer case can be compactly gathered, By arranging the anode terminal and the cathode terminal so that the external terminal portion and the internal terminal portion are interchanged with each other at the opposite positions along the first side portion, a parallel portion can be formed. The wiring inductance can be reduced by the directional parallel current.

請求項６記載の発明のよれば、二重橋構造による並行部を形成することができ、この並行部で逆方向平行電流による配線インダクタンスの低減化が図れる。   According to the sixth aspect of the present invention, the parallel portion having the double bridge structure can be formed, and the parallel portion can reduce the wiring inductance due to the reverse parallel current.

以下に本発明の一実施の形態につき図面を参照して説明する。以下は本発明の一実施形態であって本発明を限定するものではない。   Hereinafter, an embodiment of the present invention will be described with reference to the drawings. The following is one embodiment of the present invention and does not limit the present invention.

図１は、電極パターンが形成された放熱板の上面図である。本実施形態に係るパワーモジュールに用いられる放熱板ａはアルミ等の金属製の板である。放熱板ａは放熱フィンを有さない。放熱フィンは必要により別体で後付される。もちろん、放熱フィンを有した放熱板を用いてもよい。
図１に示すように、放熱板ａの周縁部に固定用の孔部ａ１が複数形成されている。
放熱板ａの片面には、６つのセラミック層ｂｕＨ，ｂｕＬ，ｂｖＨ，ｂｖＬ，ｂｗＨ，ｂｗＬが結合している。２つのセラミック層ｂｕＨ，ｂｕＬは、Ｕ相ブリッジ部を構成する回路が搭載される領域の絶縁ベースとなる。そのうちセラミック層ｂｕＨは、Ｕ相出力電極に対して陽極側に接続される半導体スイッチング素子が実装される領域の絶縁ベースであり、他のセラミック層ｂｕＬは、Ｕ相出力電極に対して陰極側に接続される半導体スイッチング素子が実装される領域の絶縁ベースである。
Ｖ相、Ｗ相のそれぞれについての２つずつのセラミック層ｂｖＨ，ｂｖＬ及びセラミック層ｂｗＨ，ｂｗＬについても同様である。 FIG. 1 is a top view of a heat sink having an electrode pattern formed thereon. The heat sink a used in the power module according to the present embodiment is a metal plate such as aluminum. The heat sink a does not have a heat radiating fin. If necessary, the heat dissipating fins are attached separately. Of course, a heat radiating plate having heat radiating fins may be used.
As shown in FIG. 1, a plurality of fixing holes a <b> 1 are formed on the peripheral edge of the heat sink a.
Six ceramic layers buH, buL, bvH, bvL, bwH, bwL are bonded to one surface of the heat sink a. The two ceramic layers buH and buL serve as an insulating base in a region where a circuit constituting the U-phase bridge portion is mounted. Among them, the ceramic layer buH is an insulating base in a region where the semiconductor switching element connected to the anode side with respect to the U-phase output electrode is mounted, and the other ceramic layer buL is on the cathode side with respect to the U-phase output electrode. This is an insulating base in a region where a semiconductor switching element to be connected is mounted.
The same applies to the two ceramic layers bvH and bvL and the ceramic layers bwH and bwL for each of the V phase and the W phase.

各相の電極パターンは、ほぼ共通しており、代表してＵ相に電極パターンの符号ｃ１〜ｃ５を示す。陽極からｃ１→ｃ２→ｃ３→ｃ４→ｃ５の順で接続される。Ｖ層陽極側のセラミック層ｂｖＨ上にあっては、電極パターンｃ３はセラミック層ｂｖＨの角部においてえぐられた形状をしており、これにより形成された領域に３端子の電極パターンｃ６が形成されている。この電極パターンｃ６に３端子型の温度検出用ＩＣが実装される。また、Ｖ層陰極側のセラミック層ｂｖＬ上には、電極パターンｃ７が形成されている。温度検出のための抵抗素子の一端が電極パターンｃ７に接続され、他端が対向する電極パターンｃ５の端部に接続される。   The electrode patterns of the respective phases are almost common, and the reference signs c1 to c5 of the electrode patterns are representatively shown for the U phase. The anodes are connected in the order of c1, c2, c3, c4, c5. On the ceramic layer bvH on the V layer anode side, the electrode pattern c3 has a shape cut out at the corner of the ceramic layer bvH, and a three-terminal electrode pattern c6 is formed in the region formed thereby. ing. A three-terminal temperature detection IC is mounted on the electrode pattern c6. An electrode pattern c7 is formed on the ceramic layer bvL on the V layer cathode side. One end of the resistance element for temperature detection is connected to the electrode pattern c7, and the other end is connected to the end of the opposing electrode pattern c5.

電極パターンｃ２、ｃ４上に半導体スイッチング素子としてのＩＧＢＴと、これに並列接続するＦＷＤ（フリーホィールダイオード）が実装される。   An IGBT as a semiconductor switching element and an FWD (freewheel diode) connected in parallel to the IGBT are mounted on the electrode patterns c2 and c4.

図２は、外囲ケースの上面図である。図３は、図２に示すＥ−Ｅ１線についての断面図(a)、同じくＥ２−Ｅ３線についての断面図(b)及びＨ−Ｈ線についての断面図である。図４は、外囲ケースの正面内視図(a)及び図２に示すＦ−Ｆ線についての断面図である。   FIG. 2 is a top view of the outer case. 3 is a cross-sectional view taken along line E-E1 shown in FIG. 2 (a), a cross-sectional view taken along line E2-E3 (b), and a cross-sectional view taken along line H-H. FIG. 4 is a front internal view (a) of the outer case and a cross-sectional view taken along line FF shown in FIG.

図２〜図４に示すように本実施形態のパワーモジュールに用いられる外囲ケースｄは、四辺形の枠状である。図２に示すように、第１辺部１を図中上部、第２辺部２を図中下部、第３辺部３を図中左部、第４辺部４を図中右部とする。第１辺部１、第２辺部２、第３辺部３及び第４辺部４からなる四辺形の枠状の周壁の内側底部には、第１開口ｄ１、第２開口ｄ２及び第３開口ｄ３を有した樹脂部が周壁に連続して形成されている。第１開口ｄ１、第２開口ｄ２及び第３開口ｄ３は第１辺部１側に偏在している。   As shown in FIGS. 2 to 4, the outer casing d used in the power module of the present embodiment has a quadrangular frame shape. As shown in FIG. 2, the first side 1 is the upper part in the figure, the second side 2 is the lower part in the figure, the third side 3 is the left part in the figure, and the fourth side part 4 is the right part in the figure. . A first opening d1, a second opening d2, and a third opening are formed on the inner bottom of a quadrilateral frame-shaped peripheral wall made up of the first side 1, the second side 2, the third side 3, and the fourth side 4. A resin portion having an opening d3 is continuously formed on the peripheral wall. The first opening d1, the second opening d2, and the third opening d3 are unevenly distributed on the first side 1 side.

外囲ケースｄは、端子を定位置に配置した成形型内に樹脂を充填硬化させて製作され、それらの端子を埋没させて保持する樹脂成型物である。
外囲ケースｄの第１辺部１に、Ｕ相用に設けられた一対の陽極端子Ｐｕ、陰極端子Ｎｕが保持されている。同様に、Ｖ相用に設けられた一対の陽極端子Ｐｖ、陰極端子Ｎｖ、Ｗ相用に設けられた一対の陽極端子Ｐｗ、陰極端子Ｎｗが外囲ケースｄの第１辺部１に保持されている。 The outer casing d is a resin molded product that is manufactured by filling and curing a resin in a molding die in which terminals are arranged at fixed positions, and burying and holding those terminals.
A pair of anode terminal Pu and cathode terminal Nu provided for the U phase is held on the first side 1 of the outer casing d. Similarly, a pair of anode terminal Pv and cathode terminal Nv provided for the V phase and a pair of anode terminal Pw and cathode terminal Nw provided for the W phase are held on the first side 1 of the outer casing d. ing.

陽極又は陰極端子Ｐｕ（Ｐｖ，Ｐｗ，Ｎｕ，Ｎｖ，Ｎｗ）の外囲ケースｄの外側に露出する端部は、外部端子部Ｐｕ１（Ｐｖ１，Ｐｗ１，Ｎｕ１，Ｎｖ１，Ｎｗ１）であり、外囲ケースｄの内側に露出する端部は、内部端子部Ｐｕ２（Ｐｖ２，Ｐｗ２，Ｎｕ２，Ｎｖ２，Ｎｗ２）である。
外部端子部Ｐｕ１（Ｐｖ１，Ｐｗ１，Ｎｕ１，Ｎｖ１，Ｎｗ１）と内部端子部Ｐｕ２（Ｐｖ２，Ｐｗ２，Ｎｕ２，Ｎｖ２，Ｎｗ２）とが第１辺部１に沿って逆位置に入れ替わって配置されている。 An end portion of the anode or cathode terminal Pu (Pv, Pw, Nu, Nv, Nw) exposed to the outside of the outer casing d is an external terminal portion Pu1 (Pv1, Pw1, Nu1, Nv1, Nw1). An end portion exposed to the inside of the case d is an internal terminal portion Pu2 (Pv2, Pw2, Nu2, Nv2, Nw2).
The external terminal portion Pu1 (Pv1, Pw1, Nu1, Nv1, Nw1) and the internal terminal portion Pu2 (Pv2, Pw2, Nu2, Nv2, Nw2) are arranged along the first side portion 1 at opposite positions. .

これらの陽極又は陰極端子Ｐｕ（Ｐｖ，Ｐｗ，Ｎｕ，Ｎｖ，Ｎｗ）は同一形状である。図５に代表図を示す。図５は、陰極端子の単独上面図(a)及び単独正面図(b)、陽極端子の単独上面図(c)及び単独正面図(d)、並びに外囲ケースに保持された状態の陽極端子及び陰極端子の配置図（上面図(e)、正面図(f)）である。   These anode or cathode terminals Pu (Pv, Pw, Nu, Nv, Nw) have the same shape. FIG. 5 shows a representative diagram. FIG. 5 shows a single top view (a) and a single front view (b) of a cathode terminal, a single top view (c) and a single front view (d) of an anode terminal, and an anode terminal held in an outer case. FIG. 4 is a layout view of a cathode terminal (top view (e), front view (f)).

図５において、Ｐは陽極端子、Ｎは陰極端子、Ｐ１は陽極端子Ｐの外部端子部、斜線部Ｐ２は陽極端子Ｐの内部端子部、Ｎ１は陰極端子Ｎの外部端子部、斜線部Ｎ２は陰極端子Ｎの内部端子部である。
図５(e)(f)に示すように、陽極端子Ｐの外部端子部Ｐ１と内部端子部Ｐ２とを繋ぐ部分と、陰極端子Ｎの外部端子部Ｎ１と内部端子部Ｎ２とを繋ぐ部分とが、水平面及び垂直面において、互いに一定の間隔を保持して配置される並行部を形成する。これにより、逆方向平行電流による配線インダクタンスの低減化が図れる。
陽極の外部端子部Ｐ１と陰極の外部端子部Ｎ１は、段違いに保持される。また、陽極の外部端子部Ｐ１と陰極の外部端子部Ｎ１は、第１辺部１の外側の出っ張り部分に保持されている。 In FIG. 5, P is an anode terminal, N is a cathode terminal, P1 is an external terminal portion of the anode terminal P, a hatched portion P2 is an internal terminal portion of the anode terminal P, N1 is an external terminal portion of the cathode terminal N, and a hatched portion N2 is This is an internal terminal portion of the cathode terminal N.
5 (e) (f), a portion connecting the external terminal portion P1 of the anode terminal P and the internal terminal portion P2, and a portion connecting the external terminal portion N1 of the cathode terminal N and the internal terminal portion N2. However, in the horizontal plane and the vertical plane, parallel portions are formed that are arranged with a certain distance from each other. As a result, the wiring inductance due to the reverse parallel current can be reduced.
The anode external terminal portion P1 and the cathode external terminal portion N1 are held in steps. Further, the anode external terminal portion P1 and the cathode external terminal portion N1 are held by a protruding portion outside the first side portion 1.

さて、外囲ケースｄの第１開口ｄ１と第２開口ｄ２との間の部分には、計６本の電気接続ピンＩｕＬ，ＩｕＨが立設され下端が外囲ケースに埋没して固定されている。
また、外囲ケースｄの第２開口ｄ２と第３開口ｄ３との間の部分には、計１０本の電気接続ピンＩｖＬ，Ｉ１，ＩｖＨ，Ｉ２が立設され下端が外囲ケースに埋没して固定されている。
外囲ケースｄの第４辺部４の第３開口ｄ３に隣接する部分には、計６本の電気接続ピンＩｗＬ，ＩｗＨが立設され下端が外囲ケースに埋没して固定されている。 Now, a total of six electrical connection pins IuL and IuH are erected in the portion between the first opening d1 and the second opening d2 of the outer casing d, and the lower ends are buried and fixed in the outer casing. Yes.
In addition, a total of ten electrical connection pins IvL, I1, IvH, I2 are erected in a portion between the second opening d2 and the third opening d3 of the outer casing d, and the lower ends are buried in the outer casing. Is fixed.
A total of six electrical connection pins IwL and IwH are erected in a portion adjacent to the third opening d3 of the fourth side portion 4 of the outer case d, and the lower ends are buried and fixed in the outer case.

外囲ケースｄの第２辺部２には、Ｕ相出力端子Ｕ１、Ｖ相出力端子Ｖ、Ｗ相出力端子Ｗ１が保持されている。
図３、図４(a)に示すように、各端子Ｐ，Ｎ，Ｕ，Ｖ，Ｗは、外部端子部と内部端子部とが異なる高さになるように、両端が逆方向に曲成されたクランク状に形成されている。
真ん中のＶ相出力端子Ｖは、内端の内部端子部Ｖ１を第２開口ｄ２の縁部まで延ばしている。Ｕ相及びＷ相の内部から外部までの導出導体は、第２辺部２に保持される外部端子Ｕ１，Ｗ１のほか、第１開口ｄ１、第３開口ｄ３の縁部に保持される内部端子Ｕ２，Ｗ２と、さらに外部端子Ｕ１，Ｗ１と内部端子Ｕ２，Ｗ２との間の接続バーＵ３，Ｗ３（図６、図７参照）とによって構成される。 A U-phase output terminal U1, a V-phase output terminal V, and a W-phase output terminal W1 are held on the second side 2 of the outer casing d.
As shown in FIGS. 3 and 4 (a), the terminals P, N, U, V, and W are bent in opposite directions so that the external terminal portion and the internal terminal portion have different heights. It is formed in a crank shape.
The middle V-phase output terminal V extends the inner terminal V1 at the inner end to the edge of the second opening d2. The lead-out conductors from the inside to the outside of the U-phase and W-phase are internal terminals held at the edges of the first opening d1 and the third opening d3 in addition to the external terminals U1 and W1 held at the second side 2. U2 and W2 and connection bars U3 and W3 (see FIGS. 6 and 7) between the external terminals U1 and W1 and the internal terminals U2 and W2.

図６、図７に示すように、放熱板ａにＩＧＢＴ５、ＦＷＤ６、温度検出用ＩＣ７及び温度検出用抵抗素子８がボンディングされ、さらにＩＧＢＴ５、ＦＷＤ６の表面電極がワイヤボンディングされる。また、放熱板ａに外囲ケースｄの下端が固定され、放熱板ａ上の電極パターンと内部端子（部）とが図示のごとくワイヤボンディングされる。温度検出用ＩＣ７は、Ｖ相ブリッジ部の陽極側に接続されるＩＧＢＴの温度を検出するものである。
図６は背面内視図(a)及び上面図(b)である。図７は左側面内視図(a)、右側面内視図(b)及び正面内視図(c)である。
第１開口ｄ１に囲まれる領域に、陽極―陰極間に架けられるＵ相ブリッジ部が構成される。同様に第２開口ｄ２に囲まれる領域に、陽極―陰極間に架けられるＶ相ブリッジ部が構成され、第３開口ｄ３に囲まれる領域に、陽極―陰極間に架けられるＷ相ブリッジ部が構成される。 As shown in FIGS. 6 and 7, the IGBT 5, FWD 6, temperature detection IC 7 and temperature detection resistance element 8 are bonded to the heat sink a, and the surface electrodes of the IGBT 5 and FWD 6 are further wire bonded. Further, the lower end of the outer casing d is fixed to the heat radiating plate a, and the electrode pattern on the heat radiating plate a and the internal terminal (part) are wire-bonded as shown. The temperature detection IC 7 detects the temperature of the IGBT connected to the anode side of the V-phase bridge portion.
FIG. 6 is a rear view (a) and a top view (b). FIG. 7 is a left side view (a), a right side view (b), and a front view (c).
A U-phase bridge portion spanned between the anode and the cathode is formed in a region surrounded by the first opening d1. Similarly, a V-phase bridge portion spanned between the anode and the cathode is configured in a region surrounded by the second opening d2, and a W-phase bridge portion spanned between the anode and the cathode is configured in a region surrounded by the third opening d3. Is done.

陽極側のセラミック層ｂｕＨ上の電極と陰極側のセラミック層ｂｕＬ上の電極との接続は、導体板ｆ１，ｆ２で行われる。すなわち、電極パターンｃ１と電極パターンｃ２との間が導体板ｆ１によって接続され、電極パターンｃ３と電極パターンｃ４との間が導体板ｆ２によって接続される。導体板ｆ１，ｆ２は、その両足を電極パターンに接続したブリッジ状で、導体板ｆ１の上方に導体板ｆ２が重なる二重橋構造を構成している。このまさに二重になる部分に、互いに一定の間隔を保持して配置される並行部が構成される。これにより、逆方向平行電流による配線インダクタンスの低減化が図れる。   Connection between the electrode on the anode-side ceramic layer buH and the electrode on the cathode-side ceramic layer buL is made by the conductor plates f1 and f2. That is, the electrode pattern c1 and the electrode pattern c2 are connected by the conductor plate f1, and the electrode pattern c3 and the electrode pattern c4 are connected by the conductor plate f2. The conductor plates f1 and f2 have a bridge shape in which both legs are connected to an electrode pattern, and form a double bridge structure in which the conductor plate f2 overlaps above the conductor plate f1. In this very double part, a parallel part arranged with a certain distance from each other is formed. As a result, the wiring inductance due to the reverse parallel current can be reduced.

上層コネクタＩ３，Ｉ４，Ｉ５は、以上のようにして放熱板ａ上に構成された３相ブリッジ型の電力変換回路の上方に配置される駆動基板ｇ（図８参照）と、駆動基板ｇの上方に配置される制御基板ｈ（図９参照）とを電気接続するコネクタである。上層コネクタＩ３は、２×５本の電気接続ピンを有する。上層コネクタＩ４は、２×６本の電気接続ピンを有し、上層コネクタＩ５は、２×２本の電気接続ピンを有する。各上層コネクタＩ３，Ｉ４，Ｉ５の下端は樹脂ブロックで構成され、保有する電気接続ピンが埋没固定されている。
各上層コネクタＩ３，Ｉ４，Ｉ５の樹脂ブロックは、外囲ケースｄに形成された窪みに挿入され接着剤により固定される。 The upper layer connectors I3, I4, and I5 are formed of a drive board g (see FIG. 8) disposed above the three-phase bridge type power conversion circuit configured on the heat sink a as described above, and the drive board g. It is a connector that electrically connects the control board h (see FIG. 9) disposed above. The upper layer connector I3 has 2 × 5 electrical connection pins. The upper layer connector I4 has 2 × 6 electrical connection pins, and the upper layer connector I5 has 2 × 2 electrical connection pins. The lower end of each upper-layer connector I3, I4, I5 is comprised with the resin block, and the electrical connection pin to hold is embed | buried and fixed.
The resin block of each upper layer connector I3, I4, I5 is inserted into a recess formed in the outer casing d and fixed with an adhesive.

Ｕ相カレント・トランス基板ｅｕ及び接続バーＵ３は、第１開口ｄ１と第２辺部２との間の外囲ケースｄの内側角部に配置される。Ｕ相カレント・トランス基板ｅｕのリング部ｅｕ１には接続バーＵ３が挿入され、Ｕ相カレント・トランス基板ｅｕは、接続バーＵ３に流れるＵ相電流を検出する。   The U-phase current transformer substrate eu and the connection bar U3 are arranged at the inner corner of the outer casing d between the first opening d1 and the second side 2. The connection bar U3 is inserted into the ring part eu1 of the U-phase current transformer substrate eu, and the U-phase current transformer substrate eu detects the U-phase current flowing through the connection bar U3.

Ｗ相カレント・トランス基板ｅｗ及び接続バーＷ３は、第３開口ｄ３と第２辺部２との間の外囲ケースｄの内側角部に配置される。Ｗ相カレント・トランス基板ｅｗのリング部ｅｗ１には接続バーＷ３が挿入され、Ｗ相カレント・トランス基板ｅｗは、接続バーＷ３に流れるＷ相電流を検出する。   The W-phase current transformer substrate ew and the connection bar W3 are disposed at the inner corner of the outer casing d between the third opening d3 and the second side 2. The connection bar W3 is inserted into the ring part ew1 of the W-phase current transformer substrate ew, and the W-phase current transformer substrate ew detects the W-phase current flowing through the connection bar W3.

図８は、駆動基板の平面図で、搭載される構成のブロック図が示される。図９は、制御基板の平面図で、搭載される構成のブロック図が示される。
図８に示されるように、駆動基板ｇの第２辺部２側に配置される端部は、凸状部ｇ１を形成している。凸状部ｇ１は、Ｕ相カレント・トランス基板ｅｕとＷ相カレント・トランス基板ｅｗとの間に配置される。凸状部ｇ１を除く主体部ｇ２に、各相のブリッジ部を駆動する駆動回路（ＩＧＢＴゲートドライバー等）が配置され、各相のブリッジ部を駆動する駆動回路は、駆動するブリッジ部の上部に配置される。駆動回路電源部、すなわち、パルストランス及び電源制御回路の一部は凸状部ｇ１に配置されている。
制御基板ｈの端部には外部接続コネクタｈ１が固定されている。 FIG. 8 is a plan view of the drive board, and a block diagram of the mounted configuration is shown. FIG. 9 is a plan view of the control board, and a block diagram of the mounted configuration is shown.
As shown in FIG. 8, the end portion disposed on the second side 2 side of the drive substrate g forms a convex portion g1. The convex portion g1 is disposed between the U-phase current transformer substrate eu and the W-phase current transformer substrate ew. A driving circuit (IGBT gate driver or the like) for driving the bridge portion of each phase is disposed on the main body g2 excluding the convex portion g1, and the driving circuit for driving the bridge portion of each phase is disposed above the driving bridge portion. Be placed. A part of the drive circuit power supply unit, that is, the pulse transformer and the power supply control circuit is arranged in the convex part g1.
An external connector h1 is fixed to the end of the control board h.

図１０に示すように、外囲ケースｄの内側に遮蔽板ｋが配置され、その上方に駆動基板ｇさらにその上方に制御基板ｈが配置され、これら３枚ｋ，ｇ，ｈは絶縁連結ボルトｎによって外囲ケースｄに固定され、外囲ケースｄの上端開口は蓋ｍにより覆われる。   As shown in FIG. 10, a shielding plate k is disposed inside the outer casing d, a driving substrate g is disposed above the shielding plate k, and a control substrate h is disposed thereon, and these three pieces k, g, and h are insulated connecting bolts. n is fixed to the outer casing d, and the upper end opening of the outer casing d is covered with a lid m.

絶縁連結ボルトｎは、上端及び下端に金属ボルトｎ１，ｎ２を有し、金属ボルトｎ１，ｎ２間が絶縁樹脂柱ｎ３で連結されており、３枚ｋ，ｇ，ｈの間のギャップを保持するとともに、駆動基板ｇと制御基板ｈとの間を絶縁樹脂柱ｎ３で絶縁保持する。   The insulating connecting bolt n has metal bolts n1 and n2 at the upper end and the lower end, the metal bolts n1 and n2 are connected by an insulating resin column n3, and a gap between the three pieces k, g, and h is maintained. At the same time, the drive substrate g and the control substrate h are insulated and held by the insulating resin pillar n3.

遮蔽板ｋは、アルミ製で電力変換回路と駆動基板ｇとの間を仕切り、電磁ノイズ等を遮断する。制御基板ｈ上のＣＰＵｈ２は、駆動基板ｇ上の駆動回路を制御する。駆動基板ｇ上の駆動回路は放熱板ａ上の電力変換回路を駆動する。   The shielding plate k is made of aluminum, partitions the power conversion circuit and the drive substrate g, and blocks electromagnetic noise and the like. The CPU h2 on the control board h controls the drive circuit on the drive board g. The drive circuit on the drive substrate g drives the power conversion circuit on the heat sink a.

図１１に、全体の回路ブロック図を示す。図１１中に、図２に示した電気接続ピンＩｕＬ，ＩｕＨ，ＩｖＬ，Ｉ１，ＩｖＨ，Ｉ２，ＩｗＬ，ＩｗＨに対応する部分に同符号を示した。その他共通の部分を同一符号で示す。
カレント・トランス基板ｅの出力端はそれぞれケーブルｒを介して制御基板ｈに接続される（図１０参照）。 FIG. 11 shows an overall circuit block diagram. In FIG. 11, the same reference numerals are given to portions corresponding to the electrical connection pins IuL, IuH, IvL, I1, IvH, I2, IwL, and IwH shown in FIG. Other common parts are denoted by the same reference numerals.
The output terminals of the current transformer board e are connected to the control board h via cables r (see FIG. 10).

なお、図９に示した外部接続コネクタｈ１の挿し込み面は、図４(b)に示す第４辺部４の上端切欠部ｔ２に配置される。上端切欠部ｔ２の上方は開放され、下方はテーパ壁ｔ１によって外側が開放される。これによって、外部接続コネクタｈ１に挿し込まれたコネクタを把持しやすく、その取り外しが容易である。   In addition, the insertion surface of the external connection connector h1 shown in FIG. 9 is arrange | positioned at the upper end notch part t2 of the 4th edge part 4 shown in FIG.4 (b). The upper part of the upper end notch t2 is opened, and the lower part is opened outside by a tapered wall t1. Thereby, it is easy to grasp the connector inserted into the external connection connector h1, and it is easy to remove it.

以上のように本実施形態のパワーモジュールは構成され、これにより、電力変換基板、駆動基板及び制御基板の３つの基板その他を、効率良くコンパクトに一体に備え、信頼性の高いパワーモジュールが実現される。   As described above, the power module according to the present embodiment is configured. As a result, the power conversion board, the drive board, and the control board, and the other boards are efficiently and compactly integrated to realize a highly reliable power module. The

本発明一実施形態に係る放熱板の上面図である。It is a top view of the heat sink which concerns on one Embodiment of this invention. 本発明一実施形態に係る外囲ケースの上面図である。It is a top view of an enclosing case concerning one embodiment of the present invention. 図２に示すＥ−Ｅ１線についての断面図(a)、同じくＥ２−Ｅ３線についての断面図(b)及びＨ−Ｈ線についての断面図である。It is sectional drawing (a) about the E-E1 line shown in FIG. 2, the sectional view (b) about the same E2-E3 line, and the sectional view about the HH line. 外囲ケースの正面内視図(a)及び図２に示すＦ−Ｆ線についての断面図である。It is sectional drawing about the front internal view (a) of an outer case and the FF line | wire shown in FIG. 本発明一実施形態に係る陰極端子の単独上面図(a)及び単独正面図(b)、陽極端子の単独上面図(c)及び単独正面図(d)、並びに外囲ケースに保持された状態の陽極端子及び陰極端子の配置図（正面図(e)、上面図(f)）である。A single top view (a) and a single front view (b) of a cathode terminal according to an embodiment of the present invention, a single top view (c) and a single front view (d) of an anode terminal, and a state held in an outer case FIG. 2 is a layout view (front view (e), top view (f)) of the anode terminal and cathode terminal of FIG. 本発明一実施形態に係る半組立て状態のパワーモジュールの背面内視図(a)及び上面図(b)である。It is the back internal view (a) and top view (b) of the power module of the semi-assembled state concerning one embodiment of the present invention. 本発明一実施形態に係る半組立て状態のパワーモジュールの左側面内視図(a)、右側面内視図(b)及び正面内視図(c)である。FIG. 4 is a left side view (a), a right side view (b), and a front view (c) of the power module in a semi-assembled state according to an embodiment of the present invention. 本発明一実施形態に係る駆動基板の平面図で、搭載される構成のブロック図が示される。1 is a plan view of a drive substrate according to an embodiment of the present invention, and a block diagram of a mounted configuration is shown. 本発明一実施形態に係る制御基板の平面図で、搭載される構成のブロック図が示される。1 is a plan view of a control board according to an embodiment of the present invention, showing a block diagram of a mounted configuration. 本発明一実施形態に係るパワーモジュールの縦断面図である。It is a longitudinal cross-sectional view of the power module which concerns on one Embodiment of this invention. 本発明一実施形態に係るパワーモジュールの回路ブロック図である。1 is a circuit block diagram of a power module according to an embodiment of the present invention.

符号の説明Explanation of symbols

ａ 放熱板
ｄ 外囲ケース
ｅｕ Ｕ相カレント・トランス基板
ｅｗ Ｗ相カレント・トランス基板
ｇ 駆動基板
ｇ１ 凸状部
ｈ 制御基板
ｈ１ 外部接続コネクタ
７ 温度検出用ＩＣ
ｋ 遮蔽板
ｍ 蓋 a Heat sink d Outer case eu U-phase current transformer board ew W-phase current transformer board g Drive board g1 Convex part h Control board h1 External connector 7 Temperature detection IC
k Shield plate m Lid

Claims (7)

Ｕ相，Ｖ相，Ｗ相の３相ブリッジ型の電力変換回路が絶縁材を介して搭載された放熱板と、
前記電力変換回路の上方に配置され、前記電力変換回路を駆動する駆動回路と駆動回路電源部とが搭載された駆動基板と、
前記電力変換回路と前記駆動基板との間を仕切る遮蔽板と、
前記駆動基板の上方に配置され、前記駆動基板を制御する制御基板と、
前記電力変換回路、前記駆動基板及び前記制御基板を囲む四辺形の枠状で一端が前記放熱板に固定された外囲ケースと、
前記外囲ケースの第１辺部に埋没保持された前記電力変換回路の陽極端子及び陰極端子と、
前記外囲ケースの第１辺部に相対する第２辺部に保持されたＵ相，Ｖ相，Ｗ相の各端子と、
３相のうちいずれか１相の電流を検出する第１カレント・トランス基板と、
他の１相の電流を検出する第２カレント・トランス基板と、
前記外囲ケースの他端の開口を覆う蓋とを備え、
前記電力変換回路のＵ相ブリッジ部、Ｖ相ブリッジ部及びＷ相ブリッジ部は、前記第１辺部に沿った一方向に所定の順で並んで配置され、
Ｕ相，Ｖ相，Ｗ相の各端子は、前記一方向に前記所定の順で並んで配置され、
前記外囲ケースの前記放熱板に合わされる一端側には、各一のブリッジ部を囲む第１開口、第２開口及び第３開口が、前記第１辺部側に偏在し、前記一方向に第１開口、第２開口、第３開口の順で並んで形成され、
前記第１開口と前記第２辺部との間の前記外囲ケースの内側角部に、３相のうちいずれか１相のブリッジ部と同相の前記端子との間を接続する導体及びこれを囲むリング部を有した前記第１カレント・トランス基板が配置され、
前記第３開口と前記第２辺部との間の前記外囲ケースの内側角部に、他の１相のブリッジ部と同相の前記端子との間を接続する導体及びこれを囲むリング部を有した前記第２カレント・トランス基板が配置され、
前記駆動基板の前記第２辺部側の端部には、前記第１カレント・トランス基板と前記第２カレント・トランス基板との間に配置される凸状部が形成され、
各相のブリッジ部を駆動する駆動回路は、駆動するブリッジ部の上部に配置されるとともに、前記駆動回路電源部の少なくとも一部は前記凸状部に配置されてなるパワーモジュール。 A heat sink on which a U-phase, V-phase, and W-phase three-phase bridge type power conversion circuit is mounted via an insulating material;
A drive board disposed above the power conversion circuit and mounted with a drive circuit for driving the power conversion circuit and a drive circuit power supply unit;
A shielding plate that partitions between the power conversion circuit and the drive board;
A control board disposed above the drive board for controlling the drive board;
An enclosing case whose one end is fixed to the heat sink in a quadrilateral frame shape surrounding the power conversion circuit, the drive board and the control board;
An anode terminal and a cathode terminal of the power conversion circuit embedded and held in the first side of the outer case;
U-phase, V-phase, and W-phase terminals held on the second side opposite to the first side of the outer case;
A first current transformer substrate for detecting a current of any one of the three phases;
A second current transformer substrate for detecting another one-phase current;
A lid covering the opening at the other end of the outer case,
The U-phase bridge part, the V-phase bridge part, and the W-phase bridge part of the power conversion circuit are arranged in a predetermined order along one direction along the first side part,
The U-phase, V-phase, and W-phase terminals are arranged in the predetermined order in the one direction,
A first opening, a second opening, and a third opening that surround each one of the bridge portions are unevenly distributed on the side of the first side, and are arranged in the one direction. Formed in the order of the first opening, the second opening, the third opening,
A conductor that connects between the bridge portion of any one of the three phases and the terminal in phase with the inner corner of the outer case between the first opening and the second side, and The first current transformer substrate having a surrounding ring portion is disposed;
On the inner corner of the outer case between the third opening and the second side, a conductor connecting the other one-phase bridge portion and the terminal in the same phase and a ring portion surrounding the conductor The second current transformer substrate having is disposed;
A convex portion disposed between the first current transformer substrate and the second current transformer substrate is formed at an end of the driving substrate on the second side portion side,
The drive circuit for driving the bridge portion of each phase is disposed on the upper portion of the bridge portion to be driven, and at least a part of the drive circuit power supply portion is disposed on the convex portion. 前記外囲ケースの前記第１開口と前記第２開口との間の部分、前記第２開口と前記第３開口との間の部分にそれぞれ電気接続ピンが立設固定され、これらの電気接続ピンによって、前記電力変換回路と前記駆動回路との全部又は一部の電気接続がなされている請求項１に記載のパワーモジュール。   Electrical connection pins are erected and fixed to a portion between the first opening and the second opening and a portion between the second opening and the third opening of the outer casing, respectively. The power module according to claim 1, wherein all or part of the electrical connection between the power conversion circuit and the drive circuit is established. 前記外囲ケースに立設固定された電気接続ピンによって、前記駆動回路と前記制御基板とが電気接続してなる請求項２に記載のパワーモジュール。   The power module according to claim 2, wherein the drive circuit and the control board are electrically connected by electrical connection pins that are erected and fixed to the outer case. Ｖ相ブリッジ部の陽極側に接続される半導体スイッチング素子の温度を検出する温度検出用ＩＣを当該半導体スイッチング素子と同じ絶縁材上であって、前記第２開口に収まる範囲に有する請求項１に記載のパワーモジュール。   The temperature detection IC for detecting the temperature of the semiconductor switching element connected to the anode side of the V-phase bridge portion is on the same insulating material as that of the semiconductor switching element, and has a range that fits in the second opening. The described power module. 前記陽極端子及び陰極端子が、Ｕ相、Ｖ相、Ｗ相毎に独立して設けられ、Ｕ相、Ｖ相、Ｗ相のそれぞれにおいて、陽極端子と陰極端子とが、互いに一定の間隔を保持して配置される並行部を有した平板状に構成され、互いに外部端子部と内部端子部とが前記第１辺部に沿って逆位置に入れ替わって配置されている請求項１に記載のパワーモジュール。   The anode terminal and the cathode terminal are provided independently for each of the U phase, the V phase, and the W phase, and in each of the U phase, the V phase, and the W phase, the anode terminal and the cathode terminal maintain a constant distance from each other. 2. The power according to claim 1, wherein the power supply is configured in a flat plate shape having parallel portions arranged in such a manner that the external terminal portion and the internal terminal portion are arranged in a reverse position along the first side portion. module. Ｕ相、Ｖ相、Ｗ相の各相においてブリッジ部の陽極側に接続される半導体スイッチング素子を設置する絶縁材と、陰極側に接続される半導体スイッチング素子を設置する絶縁材とが異なる領域に分離して配置され、両領域間の電気的往復を接続する２つの導体を備え、この２つの導体が互いに一定の間隔を保持して配置される並行部を有した平板状の二重橋構造を構成してなる請求項１に記載のパワーモジュール。   In each of the U phase, V phase, and W phase, the insulating material for installing the semiconductor switching element connected to the anode side of the bridge portion and the insulating material for installing the semiconductor switching element connected to the cathode side are in different regions. A flat double bridge structure having two parallel conductors arranged separately and having two conductors connecting the electric reciprocation between the two regions, the two conductors being arranged with a certain distance from each other The power module according to claim 1 comprising: 前記所定の順がＵ相、Ｖ相、Ｗ相の順であることを特徴とする請求項１に記載のパワーモジュール。   The power module according to claim 1, wherein the predetermined order is an order of U phase, V phase, and W phase.
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