JP5078231B2 - レーザ照射装置 - Google Patents

レーザ照射装置 Download PDF

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Publication number
JP5078231B2
JP5078231B2 JP2005085166A JP2005085166A JP5078231B2 JP 5078231 B2 JP5078231 B2 JP 5078231B2 JP 2005085166 A JP2005085166 A JP 2005085166A JP 2005085166 A JP2005085166 A JP 2005085166A JP 5078231 B2 JP5078231 B2 JP 5078231B2
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Prior art keywords
laser
cylindrical lens
film
optical element
laser beam
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Expired - Fee Related
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JP2005085166A
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Japanese (ja)
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JP2005311340A5 (enExample
JP2005311340A (ja
Inventor
幸一郎 田中
洋正 大石
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Semiconductor Energy Laboratory Co Ltd
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Semiconductor Energy Laboratory Co Ltd
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Priority to JP2005085166A priority Critical patent/JP5078231B2/ja
Publication of JP2005311340A publication Critical patent/JP2005311340A/ja
Publication of JP2005311340A5 publication Critical patent/JP2005311340A5/ja
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Publication of JP5078231B2 publication Critical patent/JP5078231B2/ja
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  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Recrystallisation Techniques (AREA)
  • Lasers (AREA)
JP2005085166A 2004-03-24 2005-03-24 レーザ照射装置 Expired - Fee Related JP5078231B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2005085166A JP5078231B2 (ja) 2004-03-24 2005-03-24 レーザ照射装置

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2004088037 2004-03-24
JP2004088037 2004-03-24
JP2005085166A JP5078231B2 (ja) 2004-03-24 2005-03-24 レーザ照射装置

Publications (3)

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JP2005311340A JP2005311340A (ja) 2005-11-04
JP2005311340A5 JP2005311340A5 (enExample) 2008-04-17
JP5078231B2 true JP5078231B2 (ja) 2012-11-21

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JP2005085166A Expired - Fee Related JP5078231B2 (ja) 2004-03-24 2005-03-24 レーザ照射装置

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JP (1) JP5078231B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5084137B2 (ja) * 2004-12-06 2012-11-28 株式会社半導体エネルギー研究所 レーザ照射装置及びレーザ照射方法、並びに半導体装置の作製方法
JP2008124149A (ja) 2006-11-09 2008-05-29 Advanced Lcd Technologies Development Center Co Ltd 光学装置および結晶化装置
CN113977089B (zh) * 2021-10-28 2024-01-23 华南师范大学 一种用于集成电路板去除焊锡的激光头装置及系统

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4454720B2 (ja) * 1998-07-13 2010-04-21 株式会社半導体エネルギー研究所 光学レンズ、ビームホモジェナイザー、レーザー照射装置、及びレーザー照射方法
JP4588153B2 (ja) * 1999-03-08 2010-11-24 株式会社半導体エネルギー研究所 レーザー照射装置
US7160765B2 (en) * 1999-08-13 2007-01-09 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
JP4921643B2 (ja) * 2001-02-22 2012-04-25 株式会社Ｉｈｉ 照明光学系及びこれを備えるレーザー処理装置

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JP2005311340A (ja) 2005-11-04

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