JP5066502B2 - プラズマ処理装置 - Google Patents
プラズマ処理装置 Download PDFInfo
- Publication number
- JP5066502B2 JP5066502B2 JP2008249357A JP2008249357A JP5066502B2 JP 5066502 B2 JP5066502 B2 JP 5066502B2 JP 2008249357 A JP2008249357 A JP 2008249357A JP 2008249357 A JP2008249357 A JP 2008249357A JP 5066502 B2 JP5066502 B2 JP 5066502B2
- Authority
- JP
- Japan
- Prior art keywords
- planar antenna
- slot
- slots
- stub
- waveguide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000012545 processing Methods 0.000 title claims description 211
- 230000005684 electric field Effects 0.000 claims description 49
- 230000005540 biological transmission Effects 0.000 claims description 44
- 238000009826 distribution Methods 0.000 claims description 41
- 239000000758 substrate Substances 0.000 claims description 21
- 239000004020 conductor Substances 0.000 claims description 10
- 239000007789 gas Substances 0.000 description 39
- 230000002093 peripheral effect Effects 0.000 description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 37
- 238000000034 method Methods 0.000 description 34
- 238000004088 simulation Methods 0.000 description 34
- 230000008569 process Effects 0.000 description 33
- 230000007246 mechanism Effects 0.000 description 23
- 229910052757 nitrogen Inorganic materials 0.000 description 18
- 238000002474 experimental method Methods 0.000 description 16
- 239000000463 material Substances 0.000 description 15
- 238000010521 absorption reaction Methods 0.000 description 14
- 238000009434 installation Methods 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 7
- 238000007254 oxidation reaction Methods 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000010453 quartz Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000005121 nitriding Methods 0.000 description 4
- 230000000644 propagated effect Effects 0.000 description 4
- 230000001902 propagating effect Effects 0.000 description 4
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 239000000498 cooling water Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000005672 electromagnetic field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 229910004541 SiN Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- -1 polytetrafluoroethylene Polymers 0.000 description 1
- 229920001343 polytetrafluoroethylene Polymers 0.000 description 1
- 239000004810 polytetrafluoroethylene Substances 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Images
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- Plasma Technology (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2008249357A JP5066502B2 (ja) | 2007-09-28 | 2008-09-27 | プラズマ処理装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007254270 | 2007-09-28 | ||
| JP2007254270 | 2007-09-28 | ||
| JP2008249357A JP5066502B2 (ja) | 2007-09-28 | 2008-09-27 | プラズマ処理装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2009099976A JP2009099976A (ja) | 2009-05-07 |
| JP2009099976A5 JP2009099976A5 (enExample) | 2011-09-29 |
| JP5066502B2 true JP5066502B2 (ja) | 2012-11-07 |
Family
ID=40702627
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2008249357A Expired - Fee Related JP5066502B2 (ja) | 2007-09-28 | 2008-09-27 | プラズマ処理装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP5066502B2 (enExample) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0319332A (ja) * | 1989-06-16 | 1991-01-28 | Hitachi Ltd | マイクロ波プラズマ処理装置 |
| JPH10284292A (ja) * | 1997-04-03 | 1998-10-23 | Sumitomo Metal Ind Ltd | プラズマ処理方法、プラズマ処理装置、半導体装置の製造方法及び電界強度分布制御装置 |
| JP4847636B2 (ja) * | 1999-04-16 | 2011-12-28 | クデラ ヨゼフ | プラズマ発生機及びこのプラズマ発生機を備えたプラズマ処理装置 |
| JP2006324551A (ja) * | 2005-05-20 | 2006-11-30 | Shibaura Mechatronics Corp | プラズマ発生装置及びプラズマ処理装置 |
| JP4576291B2 (ja) * | 2005-06-06 | 2010-11-04 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| JP4677918B2 (ja) * | 2006-02-09 | 2011-04-27 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
-
2008
- 2008-09-27 JP JP2008249357A patent/JP5066502B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2009099976A (ja) | 2009-05-07 |
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