JP5048513B2 - 水銀非含有、ナトリウム非含有の組成物およびそれを組み込む放射線源 - Google Patents
水銀非含有、ナトリウム非含有の組成物およびそれを組み込む放射線源 Download PDFInfo
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- JP5048513B2 JP5048513B2 JP2007546831A JP2007546831A JP5048513B2 JP 5048513 B2 JP5048513 B2 JP 5048513B2 JP 2007546831 A JP2007546831 A JP 2007546831A JP 2007546831 A JP2007546831 A JP 2007546831A JP 5048513 B2 JP5048513 B2 JP 5048513B2
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- 230000005855 radiation Effects 0.000 title claims description 96
- 239000000203 mixture Substances 0.000 title claims description 58
- 239000002184 metal Substances 0.000 claims description 67
- 229910052751 metal Inorganic materials 0.000 claims description 67
- 229910052733 gallium Inorganic materials 0.000 claims description 40
- 229910052797 bismuth Inorganic materials 0.000 claims description 37
- 229910052718 tin Inorganic materials 0.000 claims description 35
- 229910052745 lead Inorganic materials 0.000 claims description 34
- 150000004820 halides Chemical class 0.000 claims description 32
- 229910052748 manganese Inorganic materials 0.000 claims description 31
- 229910052720 vanadium Inorganic materials 0.000 claims description 29
- -1 oxides Chemical class 0.000 claims description 28
- 229910052719 titanium Inorganic materials 0.000 claims description 27
- 229910052726 zirconium Inorganic materials 0.000 claims description 27
- 229910052804 chromium Inorganic materials 0.000 claims description 26
- 229910052735 hafnium Inorganic materials 0.000 claims description 26
- 229910052738 indium Inorganic materials 0.000 claims description 26
- 229910052750 molybdenum Inorganic materials 0.000 claims description 26
- 229910052759 nickel Inorganic materials 0.000 claims description 26
- 229910052758 niobium Inorganic materials 0.000 claims description 26
- 229910052702 rhenium Inorganic materials 0.000 claims description 26
- 229910052715 tantalum Inorganic materials 0.000 claims description 26
- 229910052721 tungsten Inorganic materials 0.000 claims description 26
- 229910052782 aluminium Inorganic materials 0.000 claims description 25
- 229910052762 osmium Inorganic materials 0.000 claims description 23
- 229910052802 copper Inorganic materials 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 19
- 229910052716 thallium Inorganic materials 0.000 claims description 18
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 14
- 150000004770 chalcogenides Chemical class 0.000 claims description 13
- 150000004678 hydrides Chemical class 0.000 claims description 13
- 150000004679 hydroxides Chemical class 0.000 claims description 13
- 150000002902 organometallic compounds Chemical class 0.000 claims description 13
- 150000002739 metals Chemical class 0.000 claims description 8
- 230000005284 excitation Effects 0.000 claims description 7
- 229910001507 metal halide Inorganic materials 0.000 claims description 6
- 150000005309 metal halides Chemical class 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910001509 metal bromide Inorganic materials 0.000 claims description 2
- 229910001511 metal iodide Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims 3
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 239000007789 gas Substances 0.000 description 38
- 229910052732 germanium Inorganic materials 0.000 description 25
- 150000002736 metal compounds Chemical class 0.000 description 25
- 239000010949 copper Substances 0.000 description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 229910052786 argon Inorganic materials 0.000 description 9
- 229910052789 astatine Inorganic materials 0.000 description 6
- 150000001649 bromium compounds Chemical group 0.000 description 6
- DWRNSCDYNYYYHT-UHFFFAOYSA-K gallium(iii) iodide Chemical compound I[Ga](I)I DWRNSCDYNYYYHT-UHFFFAOYSA-K 0.000 description 6
- XMBWDFGMSWQBCA-UHFFFAOYSA-N hydrogen iodide Chemical group I XMBWDFGMSWQBCA-UHFFFAOYSA-N 0.000 description 5
- 239000011572 manganese Substances 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 239000010453 quartz Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- KOECRLKKXSXCPB-UHFFFAOYSA-K triiodobismuthane Chemical compound I[Bi](I)I KOECRLKKXSXCPB-UHFFFAOYSA-K 0.000 description 4
- 229910052684 Cerium Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052771 Terbium Inorganic materials 0.000 description 3
- 239000011261 inert gas Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 3
- 229910052753 mercury Inorganic materials 0.000 description 3
- 230000003595 spectral effect Effects 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- 229910004283 SiO 4 Inorganic materials 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000000295 emission spectrum Methods 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- 229910052708 sodium Inorganic materials 0.000 description 2
- 239000011734 sodium Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052724 xenon Inorganic materials 0.000 description 2
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 2
- 229910015999 BaAl Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910020068 MgAl Inorganic materials 0.000 description 1
- 229910017857 MgGa Inorganic materials 0.000 description 1
- 229910017639 MgSi Inorganic materials 0.000 description 1
- 229910052774 Proactinium Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000002259 gallium compounds Chemical class 0.000 description 1
- SRVXDMYFQIODQI-UHFFFAOYSA-K gallium(iii) bromide Chemical group Br[Ga](Br)Br SRVXDMYFQIODQI-UHFFFAOYSA-K 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006862 quantum yield reaction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- YUOWTJMRMWQJDA-UHFFFAOYSA-J tin(iv) fluoride Chemical compound [F-].[F-].[F-].[F-].[Sn+4] YUOWTJMRMWQJDA-UHFFFAOYSA-J 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/12—Selection of substances for gas fillings; Specified operating pressure or temperature
- H01J61/18—Selection of substances for gas fillings; Specified operating pressure or temperature having a metallic vapour as the principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/12—Selection of substances for gas fillings; Specified operating pressure or temperature
- H01J61/125—Selection of substances for gas fillings; Specified operating pressure or temperature having an halogenide as principal component
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/02—Details
- H01J61/30—Vessels; Containers
- H01J61/32—Special longitudinal shape, e.g. for advertising purposes
- H01J61/327—"Compact"-lamps, i.e. lamps having a folded discharge path
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J61/00—Gas-discharge or vapour-discharge lamps
- H01J61/70—Lamps with low-pressure unconstricted discharge having a cold pressure < 400 Torr
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J65/00—Lamps without any electrode inside the vessel; Lamps with at least one main electrode outside the vessel
- H01J65/04—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels
- H01J65/042—Lamps in which a gas filling is excited to luminesce by an external electromagnetic field or by external corpuscular radiation, e.g. for indicating plasma display panels by an external electromagnetic field
Landscapes
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Luminescent Compositions (AREA)
- Discharge Lamp (AREA)
Description
[実施例1]
UV−A放射線に対して透明で、約35cmの長さと約2.5cmの直径を有する円筒石英放電容器が設けられた。放電容器は、真空にされ、1回分の約0.6mgGaと約8.2mgGaI3とアルゴンが添加された。アルゴン圧は、室温で約267Paであった。容器は、炉内に挿入され、約13.56MHzの励起周波数で外部銅電極を介して、パワーがガス媒体に容量的に結合した。放射放出および放射効率が測定された。紫外および可視出力パワーは、約110℃において入力電気パワーの約30パーセントであると推定された。紫外放射線が、適当な蛍光体混合物によって可視光に変換されるときに、発光効率は、約80ルーメン/ワットであると推定された。
[実施例2]
UV−A放射線に対して透明で、約35cmの長さと約2.5cmの直径を有する円筒石英放電容器が設けられた。放電容器は、真空にされ、1回分の約3.0mgGaと約3.7mgGaI3とアルゴンが添加された。アルゴン圧は、室温で約267Paであった。容器は、炉内に挿入され、約13.56MHzの励起周波数で外部銅電極を介して、パワーがガス媒体に容量的に結合した。放射放出および放射効率が測定された。紫外および可視出力パワーは、約220℃において入力電気パワーの約32パーセントであると推定された。紫外放射線が、適当な蛍光体混合物によって可視光に変換されるときに、発光効率は、約80ルーメン/ワットであると推定された。
[実施例3]
UV−A放射線に対して透明で、約35cmの長さと約2.5cmの直径を有する円筒石英放電容器が設けられた。放電容器は、真空にされ、1回分の約3.7mgBiと約1.2mgBiI3とアルゴンが添加された。アルゴン圧は、室温で約267Paであった。容器は、炉内に挿入され、約13.56MHzの励起周波数で外部銅電極を介して、パワーがガス媒体に容量的に結合した。放射放出および放射効率が測定された。紫外および可視出力パワーは、約300℃において入力電気パワーの約25パーセントであると推定された。紫外放射線が、適当な蛍光体混合物によって可視光に変換されるときに、発光効率は、約55ルーメン/ワットであると推定された。
Claims (12)
- 内側外囲器(24)と、
不活性バッファガスと、
ハロゲンと、Ga、In、Tl、Sn、Bi、Ti、Zr及びこれらの組合せからなる群から選択される金属を含む水銀フリー及びナトリウムフリーのイオン化性組成物と、を含む放射線源であって、
前記不活性バッファガス以外の前記組成物が前記内側外囲器(24)内で励起されたときに、放射線を放出でき、
前記不活性バッファガス以外の前記組成物が前記内側外囲器(24)内で、励起時に100Pa未満の全蒸気圧が生じ、
前記金属と前記ハロゲンは、少なくともハロゲン化金属を形成し、
前記金属の少なくとも一部は、ハロゲンとの化合物ではない元素態金属として存在する、放射線源。 - 前記不活性バッファガス以外の前記組成物が、励起時に10Pa未満の全蒸気圧を生じる、請求項1記載の放射線源。
- 前記ハロゲン化金属がヨウ化金属である、請求項1または2に記載の放射線源。
- 前記ハロゲン化金属が臭化金属である、請求項1または2に記載の放射線源。
- Mn、Ni、Cu、Al、Ga、In、Tl、Sn、Pb、Bi、Ti、V、Cr、Zr、Nb、Mo、Hf、Ta、W、Re、Os及びこれらの組合せからなる群から選択される1種以上の第2の金属の1種以上の化合物をさらに含んでおり、上記化合物が、ハロゲン化物、酸化物、カルコゲン化物、水酸化物、水素化物、有機金属化合物及びこれらの組合せからなる群から選択される、請求項1乃至4のいずれかに記載の放射線源。
- 前記1種以上の第2の金属の前記1種以上の化合物がハロゲン化ガリウムである、請求項5記載の放射線源。
- 前記内側外囲器(24)を収容する外側外囲器(26)を備える、請求項1乃至6のいずれかに記載の放射線源。
- 前記少なくとも1つの外囲器の内側表面に塗布された蛍光体コーティングをさらに備える、請求項7記載の放射線源。
- 前記少なくとも1つの外囲器の外側表面に塗布された蛍光体コーティングをさらに備える、請求項7記載の放射線源。
- 前記金属がSn、Bi及びこれらの組合せからなる群から選択される金属である、請求項1乃至9のいずれかに記載の放射線源。
- 前記組成物が前記内側外囲器(24)内で300℃以下の動作温度で励起される、請求項1乃至10のいずれかに記載の放射線源。
- 前記組成物が前記内側外囲器(24)内で110〜300℃の動作温度で励起される、請求項11に記載の放射線源。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US11/015,636 US7847484B2 (en) | 2004-12-20 | 2004-12-20 | Mercury-free and sodium-free compositions and radiation source incorporating same |
US11/015,636 | 2004-12-20 | ||
PCT/US2005/045082 WO2006068887A2 (en) | 2004-12-20 | 2005-12-12 | Mercury-free and sodium-free compositions and radiation sources incorporating same |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008524809A JP2008524809A (ja) | 2008-07-10 |
JP2008524809A5 JP2008524809A5 (ja) | 2009-02-05 |
JP5048513B2 true JP5048513B2 (ja) | 2012-10-17 |
Family
ID=36570511
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007546831A Expired - Fee Related JP5048513B2 (ja) | 2004-12-20 | 2005-12-12 | 水銀非含有、ナトリウム非含有の組成物およびそれを組み込む放射線源 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7847484B2 (ja) |
EP (1) | EP1831915A2 (ja) |
JP (1) | JP5048513B2 (ja) |
CN (1) | CN101124652B (ja) |
WO (1) | WO2006068887A2 (ja) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7944148B2 (en) * | 2004-12-20 | 2011-05-17 | General Electric Company | Mercury free tin halide compositions and radiation sources incorporating same |
US20060132043A1 (en) * | 2004-12-20 | 2006-06-22 | Srivastava Alok M | Mercury-free discharge compositions and lamps incorporating gallium |
US7948180B2 (en) * | 2005-07-08 | 2011-05-24 | Panasonic Corporation | Plasma display panel and plasma display panel device with reduced driving voltage |
DE102005035191A1 (de) * | 2005-07-27 | 2007-02-01 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Niederdruckgasentladungslampe mit neuer Gasfüllung |
CN101449357A (zh) * | 2006-05-15 | 2009-06-03 | 皇家飞利浦电子股份有限公司 | 具有改善的效率的低压气体放电灯 |
DE102006048983A1 (de) * | 2006-10-17 | 2008-04-24 | Patent-Treuhand-Gesellschaft für elektrische Glühlampen mbH | Niederdruckentladungslampe |
US11482394B2 (en) * | 2020-01-10 | 2022-10-25 | General Electric Technology Gmbh | Bidirectional gas discharge tube |
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KR100348610B1 (ko) | 2000-01-19 | 2002-08-13 | 엘지전자주식회사 | 금속 할로겐 무전극 램프 |
DE10044563A1 (de) | 2000-09-08 | 2002-03-21 | Philips Corp Intellectual Pty | Niederdruckgasentladungslampe mit kupferhaltiger Gasfüllung |
DE10044562A1 (de) | 2000-09-08 | 2002-03-21 | Philips Corp Intellectual Pty | Niederdruckgasentladungslampe mit quecksilberfreier Gasfüllung |
DE10114680A1 (de) | 2001-03-23 | 2002-09-26 | Philips Corp Intellectual Pty | Hochdruck-Gasentladungslampe |
DE10128915A1 (de) | 2001-06-15 | 2002-12-19 | Philips Corp Intellectual Pty | Niederdruckgasentladungslampe mit quecksilberfreier Gasfüllung |
JP2003016998A (ja) | 2001-06-28 | 2003-01-17 | Matsushita Electric Ind Co Ltd | メタルハライドランプ |
US6861808B2 (en) | 2002-03-27 | 2005-03-01 | Matsushita Electric Industrial Co., Ltd. | Metal vapor discharge lamp |
DE10214631A1 (de) | 2002-04-02 | 2003-10-16 | Patent Treuhand Ges Fuer Elektrische Gluehlampen Mbh | Metallhalogenidfüllung und zugehörige Lampe |
JP3678212B2 (ja) | 2002-05-20 | 2005-08-03 | ウシオ電機株式会社 | 超高圧水銀ランプ |
DE10242049A1 (de) | 2002-09-11 | 2004-03-25 | Philips Intellectual Property & Standards Gmbh | Niederdruckgasentladungslampe mit zinnhaltiger Gasfüllung |
DE10254737A1 (de) | 2002-11-23 | 2004-06-09 | Philips Intellectual Property & Standards Gmbh | Niederdruckgasentladungslampe mit quecksilberfreier Gasfüllung |
-
2004
- 2004-12-20 US US11/015,636 patent/US7847484B2/en not_active Expired - Fee Related
-
2005
- 2005-12-12 EP EP05853897A patent/EP1831915A2/en not_active Withdrawn
- 2005-12-12 WO PCT/US2005/045082 patent/WO2006068887A2/en active Application Filing
- 2005-12-12 CN CN2005800484884A patent/CN101124652B/zh not_active Expired - Fee Related
- 2005-12-12 JP JP2007546831A patent/JP5048513B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN101124652A (zh) | 2008-02-13 |
WO2006068887A2 (en) | 2006-06-29 |
WO2006068887A3 (en) | 2007-05-24 |
JP2008524809A (ja) | 2008-07-10 |
US20060132042A1 (en) | 2006-06-22 |
EP1831915A2 (en) | 2007-09-12 |
CN101124652B (zh) | 2011-11-16 |
US7847484B2 (en) | 2010-12-07 |
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