JP5044319B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device including an element for converting an optical signal into an electric signal.

  Conventionally, a photodiode is known as an element (light receiving element) for converting an optical signal into an electric signal by absorbing light. A conventional semiconductor chip in which a photodiode is formed on a semiconductor substrate will be described with reference to the drawings. FIG. 9 is a cross-sectional view schematically showing a conventional semiconductor chip 100.

  A light receiving element 102 made of a photodiode is formed on the surface of a semiconductor substrate 101 made of silicon (Si) or the like, and a pad electrode 103 electrically connected to the light receiving element 102 is formed through an insulating film 104. Yes. The pad electrode 103 is covered with a passivation film 105 made of a silicon nitride film or the like.

  A support 106 such as a glass substrate is bonded to the surface of the semiconductor substrate 101 via an adhesive layer 107 made of epoxy resin or the like. The support 106 holds the semiconductor substrate 101 that is thinned during the manufacturing process, and protects elements formed on the surface of the semiconductor substrate 101.

  An insulating film 108 made of a silicon oxide film, a silicon nitride film, or the like is formed on the side surface and the back surface of the semiconductor substrate 101. On the insulating film 108, a wiring layer 109 made of aluminum or the like electrically connected to the pad electrode 103 is formed along the side surface and the back surface of the semiconductor substrate 101. A protective layer 110 made of a solder resist or the like is formed so as to cover the insulating film 108 and the wiring layer 109. An opening is formed in a predetermined region of the protective layer 110, and a ball-shaped bump electrode 111 that is electrically connected to the wiring layer 109 through the opening is formed.

  The semiconductor chip 100 is mounted on a mounting board such as a printed board via the bump electrodes 111. Light incident from the surface side of the semiconductor substrate 101 is received by the light receiving element 102, and the light receiving element 102 flows an output current corresponding to the amount of the light. Therefore, such a semiconductor chip 100 is used in a sensor (illuminance sensor) that senses ambient brightness such as “bright” and “dark”, an optical pickup device for a CD or DVD, and the like.

Techniques related to the present invention are described in, for example, the following patent documents.
JP 2006-93367 A

  In the semiconductor chip 100 described above, circuit elements such as the light receiving element 102 and the amplification transistor are designed so that a predetermined current is output according to the amount of light incident from the surface side of the semiconductor substrate 101.

  However, in recent years, the thickness of the semiconductor substrate 101 has been reduced, and unexpected light passes through the semiconductor substrate 101 from the back surface side of the semiconductor substrate 101 and is incident on the light receiving element 102. There is a problem in that the current value output from 102 deviates from the target characteristics. In particular, infrared rays are likely to pass through the semiconductor substrate 101, and the incidence of infrared rays from the back side may have a great effect on the characteristic deviation of the semiconductor chip 100. Note that the problem of characteristic deviation due to the intrusion of unnecessary light that is not planned in the design is an important problem not only in the illuminance sensor and the optical pickup device but also in various devices including a light receiving element.

  Accordingly, the main object of the present invention is to prevent the characteristic deviation of the semiconductor chip by preventing unnecessary light from entering the light receiving element.

  The present invention has been made in view of the above problems, and its main features are as follows. That is, the semiconductor device of the present invention is a semiconductor device including a semiconductor chip mounted on a mounting substrate, and the semiconductor chip is provided on a semiconductor substrate having a light receiving element formed on a surface thereof and on a back surface of the semiconductor substrate. A metal layer including a back electrode that is partially formed and electrically connected to the light receiving element, and the mounting substrate is connected to the back electrode on the surface thereof, and the back surface direction of the mounting substrate A conductive layer that blocks light incident on the surface of the semiconductor substrate from above, and the conductive layer is formed so as to cover a region of the back surface of the semiconductor substrate that is not covered by the metal layer. It is characterized by.

  In the present invention, a conductive layer is formed on a substrate (mounting substrate) on which a semiconductor chip is mounted to block light incident on the surface direction from the back surface direction of the mounting substrate. Therefore, even if there is light incident from the back surface direction to the front surface direction of the mounting substrate, the light is blocked by the conductive layer and does not reach (or is difficult to reach) the light receiving element, and the operating characteristics of the light receiving element are shifted. Can be prevented.

  Next, a first embodiment of the present invention will be described with reference to FIGS. FIG. 1 is a cross-sectional view of a semiconductor chip 1 according to the present embodiment, and FIG. 2 is a schematic plan view of the semiconductor chip 1 viewed from the back side. 1 corresponds to a cross-sectional view taken along line XX in FIG.

  On the surface of the semiconductor substrate 2 made of silicon or the like, a plurality (two in the present embodiment) of light receiving elements 3 made of photodiodes are formed in an island shape. The light receiving element 3 is an element for converting light incident from the surface side of the semiconductor substrate 2 into an electric signal.

  On the surface of the semiconductor substrate 1, in addition to the light receiving element 3, there are integrated resistors (diffusion resistors and polysilicon resistors), capacitors, transistor elements (amplifying elements) for amplifying the electric signal converted by the light receiving element 3, and the like. A circuit 4 is formed. The light receiving element 3 and the integrated circuit 4 are connected to each other via a wiring (not shown).

  An insulating film 5 (for example, a silicon oxide film formed by a thermal oxidation method, a CVD method, or the like) is formed on the surface of the semiconductor substrate 2, and the light receiving element 3 or the integrated circuit is formed on a part of the insulating film 5. A pad electrode 6 made of aluminum or the like electrically connected to the circuit 4 is formed. The formation position of the pad electrode 6 is not limited, and may be formed on the semiconductor substrate 2.

  On the insulating film 5, a passivation film 7 (for example, a silicon nitride film formed by a CVD method) that covers a part or all of the pad electrode 6 is formed.

  A support 9 is bonded onto the surface of the semiconductor substrate 2 via an adhesive layer 8 made of epoxy resin, polyimide, resist, acrylic, or the like. The support 9 may be, for example, a film-like protective tape, a rigid substrate such as glass, quartz, ceramic, or metal, or may be made of a resin. The support 9 has a function of supporting the semiconductor chip 1 and protecting the surface side thereof, and its film thickness is, for example, about 400 μm. The support 9 is made of a transparent or translucent material, and has a property of transmitting light having a wavelength that the light receiving element 3 should receive.

  In addition, you may comprise the semiconductor chip 1 without providing the support body 9 as needed. Further, a filter layer may be provided to block light of a specific wavelength that is not desired to be incident on the light receiving element 3. For example, in order to prevent infrared rays from entering the light receiving element 3, an infrared filter layer can be provided on one surface side of the support 9 (for example, the surface side of the semiconductor substrate 2).

  The entire side surface and back surface of the semiconductor substrate 2 are covered with an insulating film 10 (for example, a silicon oxide film or a silicon nitride film formed by a plasma CVD method). On the insulating film 10, a wiring layer 11 made of aluminum or the like electrically connected to the pad electrode 6 is formed along the side surface and the back surface of the semiconductor substrate 2.

  An electrode connection layer 12 is preferably formed on the wiring layer 11 as a pedestal for a bump electrode 14 to be described later. The electrode connection layer 12 is formed because it is difficult to join the wiring layer 11 made of aluminum or the like and the bump electrode 14 made of solder or the like, or the material of the bump electrode 14 flows into the wiring layer 11 side. It is because of preventing it. The electrode connection layer 12 is formed by, for example, a lift-off method in which a metal layer such as a nickel (Ni) layer and a gold (Au) layer is sequentially sputtered on the wiring layer 11 and the insulating film 10 using a resist layer as a mask, and then the resist layer is removed. Alternatively, it can be formed by a plating method. The electrode connection layer 12 can also be formed only in a region where the bump electrode 14 of the wiring layer 11 is to be formed.

  A protective layer 13 made of a solder resist, a polyimide resin, or the like is formed so as to cover the insulating film 10 and the electrode connection layer 12. An opening is formed in a predetermined region of the protective layer 13, and a bump electrode 14 made of solder or the like electrically connected to the electrode connection layer 12 through the opening is formed. The bump electrode 14 is an external electrode when the semiconductor chip 1 is mounted on a mounting substrate 20 to be described later, and is electrically connected to the light receiving element 3 and the integrated circuit 4 via the electrode connection layer 12, the wiring layer 11, and the pad electrode 6. Connected.

  In FIG. 1, the bump electrode 14 is formed on the back surface of the semiconductor substrate 2, but a part of the bump electrode 14 may extend to the side surface of the semiconductor substrate 2. According to such a configuration, since the planar area of the bump electrode 14 is expanded, it is possible to improve the effect of blocking the intrusion of light from the side surface side and the back surface side of the semiconductor substrate 2 toward the light receiving element 3.

  Next, the planar structure viewed from the back side of the semiconductor chip 1 will be described. As shown in FIG. 2, each light receiving element 3 has a metal layer (wiring layer 11, electrode) mostly formed on the back surface of the semiconductor substrate 2 when viewed from the vertical direction (thickness direction of the semiconductor substrate 2). It overlaps with the connection layer 12 and the bump electrode 14), and a part thereof does not overlap (region Y). Note that the integrated circuit 4 is preferably formed inside the formation region of the wiring layer 11 and the electrode connection layer 12.

  Next, a substrate (mounting substrate 20) on which the above-described semiconductor chip 1 is mounted will be described with reference to FIG. The mounting board 20 is a printed board or a flexible board, and as shown in FIG. 3, a conductive layer 21 made of a conductor such as copper foil, aluminum or gold is formed on the surface so as to draw a predetermined wiring pattern. ing. Each conductive layer 21 has a predetermined area expanded, and the bump electrode 14 is contacted and fixed to a contact portion 23 of the expanded area (hereinafter referred to as a land 22) in the mounting process. Here, the land of the conventional general mounting substrate has an area that is about the same as or slightly wider than the bump electrode that is in contact with the land, but the land 22 of this embodiment has a contact portion as shown in FIG. The area is expanded more than 23. Specifically, the land 22 is formed so as to cover a region of the back surface of the semiconductor substrate 2 that is not covered with the metal layer (wiring layer 11, electrode connection layer 12, bump electrode 14) during mounting.

  Next, a state where the semiconductor chip 1 is mounted on the mounting substrate 20 (semiconductor device 25) will be described. As shown in FIGS. 4 and 5, the semiconductor chip 1 is mounted on the mounting substrate 20 with the bump electrodes 14 and the lands 22 being in contact and fixed. FIG. 4 is a cross-sectional view showing the semiconductor device 25, and FIG. 5 is a plan view showing the positional relationship between the light receiving element 3, the wiring layer 11, the electrode connection layer 12, the bump electrode 14, and the land 22 of the semiconductor device 25.

  In the first embodiment, as shown in FIGS. 4 and 5, the land 22 is not covered with the metal layer (wiring layer 11, electrode connection layer 12, bump electrode 14) on the back surface of the semiconductor substrate 2. The point that covers is characteristic. Further, the region Y that is not covered with the metal layer (wiring layer 11, electrode connection layer 12, bump electrode 14) in the formation region of the light receiving element 3 is characterized by being covered with the land 22. Therefore, in the semiconductor device 25, the metal layer (wiring layer 11, electrode connection layer 12, bump electrode 14) formed entirely on the back surface of the semiconductor chip 1 and the conductive layer formed on the mounting substrate 20 in the semiconductor device 25. (Land 22) is completely covered.

  In the semiconductor device 25, a predetermined potential (for example, a power supply potential is applied to the cathode electrode and a power supply potential is applied to the anode electrode) from the bump electrode 14 to the cathode electrode and the anode electrode of the light receiving element 3 through the electrode connection layer 12, the wiring layer 11, and the pad electrode 6. (Ground potential) is applied to operate in a reverse bias state. Due to this reverse bias, a depletion layer is formed in the vicinity of the PN junction, and when light is incident, a current is generated in the light receiving element 3 in accordance with the amount of light. The current is amplified by the integrated circuit 4.

  As described above, in the semiconductor device 25 according to the first embodiment, the land 22 is not covered with the metal layer (the wiring layer 11, the electrode connection layer 12, and the bump electrode 14) on the back surface of the semiconductor substrate 2. Covering the area. Therefore, even if unexpected light is incident in the direction of the light receiving element 3 from the back side of the mounting substrate 20, the light is first blocked by the land 22, and then the metal layer (wiring layer 11, electrode connection layer 12, bump electrode). 14), unnecessary light is hardly transmitted to the surface side of the semiconductor substrate 2. Further, in the present embodiment, since the entire light receiving element 3 is completely covered with the land 22 and the metal layer, the light from the back side does not reach the light receiving element 3 (or is difficult to reach). Therefore, only the light from the surface side of the semiconductor substrate 2 can be accurately received by the light receiving element 3, and the semiconductor device 25 having desired characteristics without malfunction (generation of unnecessary current) can be obtained. . In particular, the point which can prevent effectively the incident from the back side of the light which permeate | transmits easily like infrared rays is excellent. If it is not desired to make infrared light incident on the light receiving element 3 also from the surface side of the semiconductor substrate 2, the infrared filter layer may be provided above the light receiving element 3 as described above.

  Further, the conductive layer (land 22 in this embodiment) formed on the mounting substrate 20 is provided with a light shielding function in addition to the original function (a function of interposing electrical connection with the semiconductor chip), and further, the semiconductor substrate 2. Of the metal layer (in this embodiment, the bump electrode 14, the electrode connection layer 12, and the wiring layer 11) formed on the back surface side and the side surface of the light source (function that intervenes power supply to the light receiving element 3 and the like) In addition, it is not necessary to form a separate light shielding layer by providing a light shielding function. Therefore, the manufacturing process can be simplified to reduce the manufacturing cost, and the productivity of the semiconductor device can be improved.

  In the present embodiment, the integrated circuit 4 is formed on the inner side of the formation region of the wiring layer 11 and the electrode connection layer 12. Therefore, light from the back surface side of the mounting substrate 20 does not reach the elements constituting the integrated circuit 4, and malfunction of an amplifying element such as a bipolar transistor formed in the integrated circuit 4 can be prevented. The same effect can be obtained by covering the integrated circuit 4 with the land 22.

  Further, the areas of the bump electrode 14, the electrode connection layer 12, and the wiring layer 11 are expanded, and a part thereof is formed so as to extend not only to the back surface of the semiconductor substrate 2 but also to the side surface, and the light receiving element 3 and the integrated circuit 4. May be covered from an oblique direction. By doing so, it is also possible to improve the effect of blocking the entry of light into the light receiving element 3 from an oblique direction with respect to the back surface of the mounting substrate 20.

  Next, a second embodiment of the present invention will be described with reference to FIG. FIG. 6 is a plan view of the semiconductor chip 30 according to the second embodiment as viewed from the back surface side, and shows the positional relationship between the light receiving element and the metal layer formed on the back surface of the semiconductor substrate 2. In addition, about the structure similar to 1st Embodiment, the description is abbreviate | omitted or simplified using the same symbol.

  On the surface of the semiconductor substrate 2, a plurality of (four in this embodiment) light receiving elements 31 made of photodiodes are formed in an island shape. Each light receiving element 31 is covered with the wiring layer 11, the electrode connection layer 12, and the bump electrode 14 when viewed from the thickness direction of the semiconductor substrate 2. As described above, the first embodiment is that the entire light receiving element 31 is completely covered with the metal layer (the wiring layer 11, the electrode connection layer 12, and the bump electrode 14) formed on the back surface of the semiconductor substrate 2. And different. The components other than the light receiving element 31 are the same as those in the first embodiment. The semiconductor chip 31 configured as described above is mounted on the mounting substrate 20 via the bump electrodes 14 in the same manner as in the first embodiment.

  The semiconductor device according to the second embodiment configured as described above has the following effects in addition to the effects obtained in the first embodiment. That is, in the semiconductor device according to the second embodiment, each light receiving element 31 is formed in the region of the metal layer formed on the back surface of the semiconductor substrate 2, and there is no region Y as shown in FIG. . Therefore, even if unnecessary light is incident in the direction of the light receiving element 31 from the back surface side of the mounting substrate 20, the light is less likely to reach the light receiving element 3 compared to the first embodiment. Therefore, only the light from the surface side of the semiconductor substrate 2 can be accurately received by the light receiving element 3, and a semiconductor device having desired characteristics without malfunction can be obtained.

  In addition, since the light receiving element in the present embodiment is divided and formed more finely than in the first embodiment, light reception formed in other regions even if one light receiving element does not function. The device is configured to function effectively. Therefore, when the semiconductor chip 30 is mounted at a position slightly shifted from the mounting substrate 20 or when the semiconductor chip 30 is disposed in the lens barrel portion where the light receiving window is formed, the light receiving window and the semiconductor chip 30 Even if the positional relationship is slightly deviated from the target position, the amount of light incident on the light receiving element 3 can be ensured as much as possible.

  Next, a third embodiment of the present invention will be described with reference to FIG. FIG. 7 is a plan view of the semiconductor chip 35 according to the third embodiment viewed from the back side, and shows the positional relationship between the light receiving element, the dummy light receiving element, and the metal layer formed on the back surface of the semiconductor substrate 2. Yes. In addition, about the structure similar to 1st and 2nd embodiment, the description is abbreviate | omitted or simplified using the same symbol.

  A plurality of light receiving elements 31 are formed on the surface of the semiconductor substrate 2. A dummy light receiving element 36 is formed in a central region surrounded by the light receiving element 31 on the surface of the semiconductor substrate 2. The light receiving element 31 is an element for converting light incident from the surface side of the semiconductor substrate 2 into an electric signal, and is connected to the integrated circuit 4. On the other hand, the dummy light receiving element 36 has substantially the same structure (anode region and cathode region) as the light receiving element 31, but is not electrically connected to the integrated circuit 4 or the light receiving element 3. -GND or GND-GND, and the current generated by the dummy light receiving element 36 is completed between the power supply-GND or GND-GND. That is, the dummy light receiving element 36 is an element that does not affect the original circuit operation including the operation of the integrated circuit 4 and the light receiving element 3. As described above, the dummy light receiving element 36 is not covered with the metal layer (wiring layer 11, electrode connection layer 12, bump electrode 14) in the surface of the semiconductor substrate 2, and is not covered with the land 22 in the mounted state. It differs from the first and second embodiments in that it is formed in a region including a region (for example, the region Z shown in FIG. 5). Other configurations are the same as those in the first or second embodiment.

  The semiconductor chip 35 configured as described above is mounted on the mounting substrate 20 via the bump electrodes 14 in the same manner as in the first and second embodiments.

  The semiconductor device according to the third embodiment configured as described above has the following effects in addition to the effects obtained in the second embodiment. That is, in the semiconductor device according to the third embodiment, the dummy light receiving element 36 is either a metal layer formed on the back surface of the semiconductor substrate 2 or a conductive layer formed on the mounting substrate 20 in the surface of the semiconductor substrate 2. It is formed including a region that does not overlap. Therefore, even if unnecessary light reaches from the back surface side of the mounting substrate 20 to the front surface side of the semiconductor substrate 2 through a gap like the region Z, the light is absorbed by the anode region and the cathode region of the dummy light receiving element 36. Is done. Since most of the generated carriers are the current of the dummy light receiving element 36, the light receiving element 3 and the integrated circuit 4 are hardly affected by light from the back side, and a semiconductor device having desired characteristics is obtained. Can do.

  Although the dummy light receiving element 36 shown in FIG. 7 is formed only in the central region of the semiconductor chip 35, it is formed in other regions (between adjacent light receiving elements 31, the outer peripheral region of the semiconductor chip 35, etc.). It is also possible to do.

Next, a reference example of the present invention will be described with reference to FIG. FIG. 8 is a cross-sectional view showing a state in which the semiconductor chip 40 according to the reference example is mounted on the mounting substrate 45. In addition, about the structure similar to the 1st thru | or 3rd embodiment, the description is abbreviate | omitted or simplified using the same symbol.

  In the semiconductor chip 40, a bump electrode 42 connected to the pad electrode 6 via an electrode connection layer 41 similar to the electrode connection layer 12 is formed adjacent to the side surface of the semiconductor substrate 2. Thus, the wiring layer 11 described in the first to third embodiments is not formed on the side surface and the back surface of the semiconductor substrate 2.

  The semiconductor chip 40 configured as described above is mounted on the mounting substrate 45 via the bump electrodes 42. A land 46 is formed on the mounting substrate 45 so as to cover the entire light receiving element 3 in the mounted state. Other configurations are the same as in the above embodiment.

  In the first to third embodiments, at least a part of the metal layer (wiring layer 11, electrode connection layer 12, bump electrode 14) formed on the back surface of the semiconductor chip is configured to cover the light receiving element 3. In the fourth embodiment, it is not. That is, in the present embodiment, the conductive layer (land 46) formed on the mounting substrate side functions as a light shielding layer that prevents light from entering the light receiving element 3 from the back surface side of the mounting substrate.

  Therefore, light incident in the direction of the light receiving element 3 from the back surface side of the mounting substrate 45 is blocked by the land 46 and does not reach the light receiving element 3. Therefore, only the light from the surface side of the semiconductor substrate 2 can be accurately received by the light receiving element 3, and a semiconductor device having desired characteristics without malfunction can be obtained.

In addition, this invention is not limited to the said 1st- 3rd embodiment, In the range which does not deviate from the summary, a change is possible. For example, the BGA (Ball Grid Array) type semiconductor device having the ball-shaped bump electrodes 14 and 42 has been described in the above embodiment. However, the LGA (Land Grid Array) type and other CSP type and flip chip type semiconductor devices are described. You may apply to. In addition, the other surface of the mounting substrate (the surface on which the semiconductor chip is not mounted) or the region corresponding to the light receiving element 3 in the mounting substrate when the mounting substrate is composed of multiple layers is shown in FIG. Such a light shielding layer 47 may be formed. Thereby, it is possible to further prevent unnecessary light from entering the light receiving element. The light shielding layer 47 is made of a metal material, resin, or the like, and may be made of a material that can block the transmission of light by absorbing or reflecting the target light. Further, as the light shielding layer 47, it is also possible to use wiring for supplying a ground voltage or a power supply voltage. The present invention can be widely applied as a technique for preventing unnecessary light from entering a light receiving element.

1 is a cross-sectional view showing a semiconductor chip according to a first embodiment of the present invention. 1 is a plan view showing a semiconductor chip according to a first embodiment of the present invention. It is a top view which shows the mounting substrate which concerns on the 1st Embodiment of this invention. 1 is a cross-sectional view showing a semiconductor device according to a first embodiment of the present invention. 1 is a plan view showing a semiconductor device according to a first embodiment of the present invention. It is a top view which shows the semiconductor chip concerning the 2nd Embodiment of this invention. It is a top view which shows the semiconductor chip concerning the 3rd Embodiment of this invention. It is sectional drawing which shows the semiconductor device which concerns on the reference example of this invention. It is sectional drawing which shows the conventional semiconductor chip.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1 Semiconductor chip 2 Semiconductor substrate 3 Light receiving element 4 Integrated circuit 5 Insulating film 6 Pad electrode 7 Passivation film 8 Adhesive layer 9 Support body 10 Insulating film 11 Wiring layer 12 Electrode connection layer
DESCRIPTION OF SYMBOLS 13 Protective layer 14 Bump electrode 20 Mounting board 21 Conductive layer 22 Land 23 Contact part 25 Semiconductor device 30 Semiconductor chip 31 Light receiving element 35 Semiconductor chip 36 Dummy light receiving element 40 Semiconductor chip 41 Electrode connection layer 42 Bump electrode 45 Mounting board 46 Land 47 Light shielding Layer 100 Semiconductor chip 101 Semiconductor substrate 102 Light receiving element 103 Pad electrode 104 Insulating film
105 Passivation film 106 Support body 107 Adhesive layer 108 Insulating film 109 Wiring layer 110 Protective layer 111 Bump electrode

Claims (5)

A semiconductor device comprising a semiconductor chip mounted on a mounting substrate,
The semiconductor chip includes a semiconductor substrate having a light receiving element formed on a surface thereof;
A metal layer that is partially formed on the back surface of the semiconductor substrate and includes a back electrode electrically connected to the light receiving element;
The mounting substrate includes a conductive layer that is connected to the back surface electrode on the surface and blocks light incident on the surface direction of the semiconductor substrate from the back surface direction of the mounting substrate,
The semiconductor device is characterized in that the conductive layer is formed so as to cover a region of the back surface of the semiconductor substrate that is not covered with the metal layer.   The semiconductor device according to claim 1, wherein the metal layer covers the entire light receiving element. The metal layer covers a part of the light receiving element,
The semiconductor device according to claim 1, wherein the conductive layer covers a region of the light receiving element that is not covered with the metal layer.   A region of the surface of the semiconductor substrate that is not covered with either the metal layer or the conductive layer is not electrically connected to the light receiving element, and does not affect the operation of the light receiving element. The semiconductor device according to claim 1, further comprising a dummy light receiving element. Wherein on the back surface of the mounting substrate, the semiconductor device according to any one of claims 1 to 4, characterized in that it comprises a light shielding layer covers the entire of the light receiving element.

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